KR20060107250A - Photosensitive resin composition and dry film photoresist obtained therefrom - Google Patents
Photosensitive resin composition and dry film photoresist obtained therefrom Download PDFInfo
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- KR20060107250A KR20060107250A KR1020050029372A KR20050029372A KR20060107250A KR 20060107250 A KR20060107250 A KR 20060107250A KR 1020050029372 A KR1020050029372 A KR 1020050029372A KR 20050029372 A KR20050029372 A KR 20050029372A KR 20060107250 A KR20060107250 A KR 20060107250A
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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Abstract
본 발명은 알칼리 현상성 바인더 폴리머, 광중합성 올리고머, 광중합 개시제, 첨가제 및 용매를 포함하는 감광성 수지조성물에 있어서 알칼리 현상성 바인더 폴리머는 다음 화학식 1로 표시되는 이소보닐 (메타)아크릴레이트 화합물을 모노머 중 포함하여 얻어진 감광성 수지조성물을 제공하는 바, 이는 세선밀착력을 증대시켜 도금조에서의 동밀착력 저하로 인한 해상도 저하를 방지할 수 있어 고밀도의 인쇄회로기판의 제조에 사용되는 드라이필름 레지스트 제조에 유용하다. In the photosensitive resin composition comprising an alkali developable binder polymer, a photopolymerizable oligomer, a photopolymerization initiator, an additive, and a solvent, the alkali developable binder polymer comprises an isobonyl (meth) acrylate compound represented by the following formula (1) in a monomer: It provides a photosensitive resin composition obtained by including, which is useful for the production of dry film resists used in the production of high-density printed circuit boards by increasing the fine wire adhesion to prevent the degradation of the resolution due to the decrease in the cohesion in the plating bath. .
상기 식에서, R은 H 또는 CH3이다. Wherein R is H or CH 3
Description
도 1은 인쇄회로기판에 대한 일반적인 제조공정을 나타낸 블록도이다.1 is a block diagram showing a general manufacturing process for a printed circuit board.
본 발명은 감광성 수지조성물에 관한 것으로서, 더욱 상세하게는 도금용 인쇄회로기판 화상 제조 공정에서 회로 형성을 위해 사용 중인 드라이필름 포토레지스트 조성물과 이로부터 얻어진 드라이필름 포토레지스트에 관한 것이다.The present invention relates to a photosensitive resin composition, and more particularly, to a dry film photoresist composition and a dry film photoresist obtained therefrom for use in forming a circuit in a printed circuit board image manufacturing process for plating.
인쇄회로기판(PCB: Printed Circuit Board)에 회로를 형성하는 데에는 통상 드라이 필름 포토레지스트(DFR, Dry Film Photoresist)가 사용되는데, 이를 도 1을 참조하여 설명하면 다음과 같다.Dry film photoresist (DFR) is commonly used to form a circuit on a printed circuit board (PCB), which will be described below with reference to FIG. 1.
PCB의 원판소재인 구리적층판을 라미네이션 하기 위해 먼저 전처리 공정을 거친다. 전처리공정은 외층공정에서는 드릴링, 디버링(deburing), 정면 등의 순이며, 내층 공정에서는 정면 또는 산세를 거친다. 정면공정에서는 bristle brush 및 jet pumice 공정이 주로 사용되며, 산세는 soft etching 및 5wt% 황산산세를 거친다.Pre-treatment is first performed to laminate the copper-clad laminate, which is the raw material of the PCB. The pretreatment step is in the order of drilling, deburring, front, etc. in the outer layer process, and the front or pickling in the inner layer process. Bristle brush and jet pumice processes are mainly used in the front process, and pickling is performed through soft etching and 5 wt% sulfate pickling.
전처리 공정을 거친 구리적층판에 회로를 형성시키기 위해서는 일반적으로 구리적층판의 구리층 위에 DFR을 라미네이션한다. 이 공정에서는 라미네이터를 이용하여 DFR의 보호 필름을 벗겨내면서 DFR의 포토레지스트층을 구리표면위에 라미네이션시킨다. 일반적으로 라미네이션 속도 0.5∼3.5m/min, 온도 100∼130℃, 로울러 압력 가열롤압력 10∼90psi에서 진행한다.In order to form a circuit on a pre-processed copper-clad laminate, the DFR is usually laminated on the copper layer of the copper-clad laminate. In this process, the photoresist layer of the DFR is laminated on the copper surface while the protective film of the DFR is peeled off using a laminator. In general, the lamination speed is 0.5 to 3.5 m / min, temperature 100 to 130 ℃, roller pressure heating roll pressure 10 to 90 psi.
라미네이션공정을 거친 인쇄회로기판은 기판의 안정화를 위하여 15분 이상 방치한 후 원하는 회로패턴이 형성된 포토마스크를 이용하여 DFR의 포토레지스트에 대해 노광을 진행한다. 이 과정에서 아트워크(포토마스크)에 자외선을 조사하면 자외선이 조사된 포토레지스트는 조사된 부위에서 함유된 광개시제에 의해 중합이 개시된다. 먼저 초기에는 포토레지스트내의 산소가 소모되고, 다음 활성화된 모노머가 중합되어 가교반응이 일어나고 그 후 많은 양의 모노머가 소모되면서 중합반응이 진행된다. 한편 미노광부위는 가교 반응이 진행되지 않은 상태로 존재하게 된다.After the lamination process, the printed circuit board is left to stand for at least 15 minutes to stabilize the substrate, and then exposed to the photoresist of the DFR using a photomask having a desired circuit pattern. In this process, when the artwork (photomask) is irradiated with ultraviolet rays, the photoresist irradiated with ultraviolet rays is initiated by the photoinitiator contained in the irradiated portion. First, oxygen in the photoresist is consumed, and then the activated monomer is polymerized to cause a crosslinking reaction, and then a large amount of monomer is consumed to proceed with the polymerization reaction. On the other hand, the unexposed portion is present in a state where the crosslinking reaction does not proceed.
다음 포토레지스트의 미노광 부분을 제거하는 현상공정을 진행하는데, 알카리 현상성 DFR인 경우 현상액으로 0.8∼1.2wt%의 포타슘카보네이트(K2CO3) 및 소듐카보네이트(Na2CO3) 수용액이 사용된다. 이 공정에서 미노광 부분의 포토레지스트는 현상액 내에서 결합제 고분자의 카르복시산과 현상액의 비누화 반응에 의해서 씻겨 져 나가고, 경화된 포토레지스트는 구리 표면 위에 잔존하게 된다.Next, a development process of removing unexposed portions of the photoresist is performed. In the case of alkaline developing DFR, 0.8 to 1.2 wt% of potassium carbonate (K 2 CO 3 ) and sodium carbonate (Na 2 CO 3 ) aqueous solutions are used as a developer. do. In this process, the photoresist of the unexposed portion is washed away by the saponification reaction between the carboxylic acid of the binder polymer and the developer in the developer, and the cured photoresist remains on the copper surface.
다음 내층 및 외층 공정에 따라 다른 공정을 거쳐 회로가 형성된다. 내층공정에서는 부식과 박리공정을 통하여 기판 위에 회로가 형성되며 외층 공정에서는 도금 및 텐팅 공정을 거친 후 에칭과 솔더 박리를 진행하고 소정의 회로를 형성시킨다. Next, a circuit is formed through different processes depending on the inner layer and outer layer processes. In the inner layer process, a circuit is formed on a substrate through a corrosion and peeling process. In the outer layer process, a plating and tenting process are performed, followed by etching and solder peeling to form a predetermined circuit.
도금공정에서는 도금액 및 여러 가지 첨가제 약품에 대하여 기판상에 도금이 행해지는 동안 드라이필름 포토레지스트가 침식을 받아 벗겨지지 않도록 내도금성을 지녀야 한다. 텐팅공정에서는 드라이필름 포토레지스트 막 자체의 탄성이 요구되어진다. 드라이필름 포토레지스트는 기판의 상하면에 전도성을 부여하는 임의의 크기의 구멍을 에칭액으로부터 보호하기 위하여 구멍을 덮고 있는 레지스트로서 작용한다. 50±5℃ 온도 범위의 FeCl2, FeCl3, CuCl2, CuCl3 및 과황산암모니아 등의 에칭액이 분사되는 에칭 조건에 대하여 기판상의 구멍을 막고 있는 드라이 필름의 외부 응력에 대응하는 충분한 탄성이 요구되어진다. In the plating process, the plating film and various additive chemicals should be plated to prevent the dry film photoresist from being eroded and peeled off during plating on the substrate. In the tenting process, the elasticity of the dry film photoresist film itself is required. The dry film photoresist acts as a resist covering the pores to protect the pores of any size that impart conductivity to the upper and lower surfaces of the substrate from the etchant. Sufficient elasticity is required to correspond to the external stress of the dry film blocking the pores on the substrate for etching conditions such as FeCl 2 , FeCl 3 , CuCl 2 , CuCl 3 and ammonia persulfate in the temperature range of 50 ± 5 ° C. It is done.
드라이 필름의 제조공정은 크게 조액, 혼합, 코팅, 건조, 권취, 슬릿팅(Slitting)의 과정으로 진행된다. The manufacturing process of the dry film is largely carried out in the process of crude liquid, mixing, coating, drying, winding, slitting (slitting).
도금용 드라이필름 포토 레지스트는 도금조에서 도금액에 크게 민감하여 에칭내성과 수율에 많은 영향을 끼친다. 도금조에서 동 밀착력은 드라이 필름에 많은 에너지를 줄 때 증가하지만 도금액에서는 노광기 에너지의 양으로 밀착력을 증진하는 데는 한계가 있다. The dry film photoresist for plating is highly sensitive to the plating solution in the plating bath, which greatly affects the etching resistance and the yield. The copper adhesion in the plating bath increases when a lot of energy is applied to the dry film, but in the plating solution, there is a limit in enhancing the adhesion by the amount of exposure machine energy.
이에, 본 발명은 환형 구조를 갖는 이소보닐 (메타)아크릴레이트 화합물을 모노머 중 포함하여 얻어진 바인더 폴리머를 사용하여 동 밀착력이 향상된 감광성 수지조성물을 제공하는 데 그 목적이 있다.Accordingly, an object of the present invention is to provide a photosensitive resin composition having improved cohesion by using a binder polymer obtained by including an isobonyl (meth) acrylate compound having a cyclic structure in a monomer.
상기와 같은 목적을 달성하기 위한 본 발명의 감광성 수지조성물은 알칼리 현상성 바인더 폴리머, 광중합성 올리고머, 광중합 개시제 및 첨가제를 포함하는 것으로서, 이때 알칼리 현상성 바인더 폴리머는 다음 화학식 1로 표시되는 이소보닐 (메타)아크릴레이트 화합물을 모노머 중 포함하여 얻어진 것임을 그 특징으로 한다.The photosensitive resin composition of the present invention for achieving the above object comprises an alkali developable binder polymer, a photopolymerizable oligomer, a photopolymerization initiator and an additive, wherein the alkali developable binder polymer is represented by the following formula (1) It is characterized by the thing obtained by including a meta) acrylate compound in a monomer.
화학식 1Formula 1
상기 식에서, R은 H 또는 CH3이다. Wherein R is H or CH 3
이와 같은 본 발명을 더욱 상세하게 설명하면 다음과 같다.The present invention will be described in more detail as follows.
본 발명에서 감광성 수지조성물이라 함은 기재 필름 상에 도포되어 포토레지스트층을 형성하는 수지 조성을 말하는데, 여기서 포토레지스트층은 통상 알카리 현상성 바인더 폴리머, 광중합성 올리고머, 광중합개시제 및 각종 첨가제를 포함하는 조성이다. In the present invention, the photosensitive resin composition refers to a resin composition applied on a base film to form a photoresist layer, wherein the photoresist layer is a composition including an alkali developable binder polymer, a photopolymerizable oligomer, a photopolymerization initiator, and various additives. to be.
특히, 본 발명의 감광성 수지조성물은 분자에 환형구조를 갖는 상기 화학식 1로 표시되는 이소보닐 (메타)아크릴레이트 화합물을 모노머 중 포함하여 얻어진 바인더 폴리머를 사용한 것이다. In particular, the photosensitive resin composition of this invention uses the binder polymer obtained by including the isobonyl (meth) acrylate compound represented by the said General formula (1) which has a cyclic structure in a molecule | numerator in a monomer.
바인더 폴리머로서 모노머 중 이소보닐 (메타)아크릴레이트를 포함하는 것을 사용하면, 분자 구조 중 환형부분이 내화학성를 증대시키는 역할을 하여 궁극적으로는 감광성 수지의 도금내성을 증대시킨다. When a binder polymer contains isobornyl (meth) acrylate among monomers, the cyclic portion of the molecular structure serves to increase chemical resistance and ultimately increase plating resistance of the photosensitive resin.
이와같은 역할을 하는 이소보닐 (메타)아크릴레이트 화합물은 바인더 폴리머 전체 모노머 중 1 내지 40중량%로 포함되는 것이 바람직한데, 그 함량이 40% 초과면 드라이 필름의 중요한 요소인 해상도에 크게 문제를 줄 수 있다. The isobornyl (meth) acrylate compound which plays such a role is preferably contained in an amount of 1 to 40% by weight of the total monomer of the binder polymer, if the content is more than 40% will greatly affect the resolution, an important factor of dry film Can be.
이소보닐 (메타)아크릴레이트 화합물을 제외한 나머지의 바인더 폴리머 구성 모노머, 용매 및 이를 이용한 중합방법들을 각별히 한정되는 것은 아니며 당업계에 통상의 지식을 가진 자에게 알려진 정도의 것일 뿐만 아니라, 광중합성 올리고머, 광중합개시제 및 각종 첨가제 등은 통상의 감광성 수지조성물에 따르는 바 각별히 한정된 것은 아니다.The remaining binder polymer constituent monomers, solvents and polymerization methods using the same except for the isobornyl (meth) acrylate compound are not particularly limited, and are not limited to those known to those skilled in the art, but also photopolymerizable oligomers, The photoinitiator, various additives, etc. are not particularly limited as they follow the usual photosensitive resin composition.
이와같은 감광성 수지조성물을 기재필름, 구체적으로는 폴리에틸렌테레프탈레이트 필름 상에 도포하여 드라이필름 포토레지스트를 제조할 수 있는데, 구체적으로 폴리에틸렌 테레프탈레이트 필름에 감광성 수지조성물을 두께 5 내지 150㎛가 되도록 코팅한 후 건조하여 포토레지스트층을 형성시킨다. 여기서, 기재필름인 폴 리에틸렌 테레프탈레이트 필름은 두께 5 내지 30㎛인 것이 통상 바람직하다. Such a photosensitive resin composition may be applied onto a base film, specifically, a polyethylene terephthalate film, to prepare a dry film photoresist. Specifically, the photosensitive resin composition is coated on a polyethylene terephthalate film to have a thickness of 5 to 150 μm. After drying, a photoresist layer is formed. Here, it is usually preferable that the polyethylene terephthalate film as the base film has a thickness of 5 to 30 µm.
이하, 본 발명을 실시예에 의거 상세히 설명하면 다음과 같은 바, 본 발명이 실시예에 의해 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by the Examples.
이하의 실시예에서는, 이소보닐 (메타)아크릴레이트 화합물이 동밀착력과 산화에 미치는 영향을 측정하기 위해 광중합 올리고머 및 광중합 개시제 등을 고정하여 실험하였다.In the following examples, in order to measure the effect of the isobonyl (meth) acrylate compound on the cohesion and oxidation, the experiment was carried out by fixing a photopolymerization oligomer, a photopolymerization initiator and the like.
실시예 1 내지 2 및 비교예 1Examples 1-2 and Comparative Example 1
본 발명에서는 실시예 1 내지 2 및 비교예 1의 조성에 따른 포토레지스트 조성을 갖는 드라이 필름 포토레지스트를 기존의 제조방법을 이용하여 제조한 후, 도 1에 나타낸 바와 같은 일반적인 PCB(Printed Circuit Boards) 제조공정에 따라 드라이 필름의 물성을 평가하였다.In the present invention, after manufacturing a dry film photoresist having a photoresist composition according to the composition of Examples 1 to 2 and Comparative Example 1 using a conventional manufacturing method, manufacturing a general PCB (Printed Circuit Boards) as shown in FIG. According to the process, the physical properties of the dry film were evaluated.
실시예 및 비교예의 구체적 조성은 다음 표 1에 나타낸 바와 같다.Specific compositions of Examples and Comparative Examples are shown in Table 1 below.
상기 표 1 기재에 있어서, 바인더 폴리머 A, A' 및 B의 모노머 구성은 다음 표 2에 나타낸 바와 같다.In the description of Table 1, the monomer configurations of the binder polymers A, A 'and B are as shown in Table 2 below.
상기 실시예 1 내지 2 및 비교예 1에 따라 제조된 각각의 감광성 수지조성물들을 수지층의 두께가 40㎛가 되도록 19㎛ 폴리에틸렌 테레프탈레이트 필름에 균일하게 코팅 후 건조하였다. 이렇게 제조된 드라이 필름 포토레지스트를 CCL(Copper Clad Laminates)에 라미네이션시킨 후 다음의 노광에너지 즉, 50mJ/㎠, 그리고 73mJ/㎠를 조사한 후 현상공정을 거쳐 드라이 필름의 기초 물성인 해상도, 독립세선 및 1/1해상도를 전자현미경을 통해 관찰하였다. 그 결과를 다음 표 3에 나타내었다. Each of the photosensitive resin compositions prepared according to Examples 1 to 2 and Comparative Example 1 was uniformly coated on a 19 μm polyethylene terephthalate film and dried to have a thickness of 40 μm. The dry film photoresist thus prepared is laminated to CCL (Copper Clad Laminates), and the following exposure energy, namely, 50mJ / cm 2 and 73mJ / cm 2, is irradiated, followed by a developing process, which is the basic property of dry film resolution, independent thin lines and 1/1 resolution was observed through an electron microscope. The results are shown in Table 3 below.
동일 단을 기준으로 할 때, 해상도, 독립세선 및 1/1 해상도 값은 작을수록 우수한 것이다. Based on the same stage, the smaller the resolution, fine line and 1/1 resolution value, the better.
상기 실시예 1 내지 2와 비교예 1을 비교해 본 결과 이소보닐 (메타)아크릴레이트를 모노머 중 포함하여 얻어진 바인더 폴리머를 사용한 포토레지스트가 표 3에서 보는 바와 같이 동 밀착력이 증대되는 효과를 나타냄을 알 수 있다. As a result of comparing the Examples 1 to 2 and Comparative Example 1, it was found that the photoresist using the binder polymer obtained by including isobonyl (meth) acrylate in the monomer shows an effect of increasing the copper adhesion as shown in Table 3. Can be.
이상에서 상세히 설명한 바와 같이, 본 발명에 따라 분자내에 환형 구조를 갖는 이소보닐 (메타)아크릴레이트 화합물을 모노머 중 포함하여 얻어진 바인더 폴리머를 사용한 감광성 수지 조성물은 세선밀착력이 증대되어 도금조에서의 동밀착력 저하로 인한 해상도 저하를 방지할 수 있어 고밀도의 인쇄회로기판의 제조에 사용되는 드라이필름 포토레지스트 제조에 유용하다. As explained in detail above, the photosensitive resin composition using the binder polymer obtained by including the isobonyl (meth) acrylate compound which has a cyclic structure in a molecule | numerator in a molecule | numerator according to this invention has the fine wire adhesive force, and the cohesion force in a plating bath is increased. The degradation of the resolution due to the degradation can be prevented and is useful for the manufacture of dry film photoresists used in the manufacture of high density printed circuit boards.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0539444A (en) * | 1990-11-30 | 1993-02-19 | Hitachi Chem Co Ltd | Positive type photosensitive anionic electrodeposition coating compound resin composition, electrdeposition coating bath using the same composition, electrodeposition coating and production of printed circuit board |
| JPH08134015A (en) * | 1994-11-04 | 1996-05-28 | Idemitsu Petrochem Co Ltd | Methylnorbornene (meth)acrylate, its production and photosensitive resin composition |
| KR100520148B1 (en) * | 1997-12-31 | 2006-05-12 | 주식회사 하이닉스반도체 | Novel bicycloalkene derivatives and photoresist polymers using the same and photoresist compositions containing the polymers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0539444A (en) * | 1990-11-30 | 1993-02-19 | Hitachi Chem Co Ltd | Positive type photosensitive anionic electrodeposition coating compound resin composition, electrdeposition coating bath using the same composition, electrodeposition coating and production of printed circuit board |
| JPH08134015A (en) * | 1994-11-04 | 1996-05-28 | Idemitsu Petrochem Co Ltd | Methylnorbornene (meth)acrylate, its production and photosensitive resin composition |
| KR100520148B1 (en) * | 1997-12-31 | 2006-05-12 | 주식회사 하이닉스반도체 | Novel bicycloalkene derivatives and photoresist polymers using the same and photoresist compositions containing the polymers |
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