KR20100028990A - Substrate processing apparatus - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, comprising: a chamber having a reaction space, a substrate settling unit for placing a substrate in the chamber, and lower heating means positioned under the chamber to heat the substrate settling using radiant heat; Provided is a substrate processing apparatus including a radiant heat guide portion positioned between a substrate settlement portion and the lower heating means to adjust a temperature for each center region and edge region of the substrate settlement portion. As described above, the present invention can provide a radiant heat guide between the heating means for dissipating the radiant heat and the substrate mounting portion, so that the temperature distribution of the substrate mounting portion can be made uniform. That is, at least a lower portion of the edge area of the substrate settled area is cut off from radiating heat that travels from the lower portion of the center portion of the substrate settled to the edge portion of the substrate settled area of the lower portion of the center settled portion of the substrate settled portion, thereby preventing the radiant heat from being concentrated in one region. can do.

Description

Substrate Processing Unit {SUBSTRATE PROCESSING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of uniformly regulating the temperature distribution of a substrate mounting portion by uniformly providing radiant heat to the entire surface of the substrate mounting portion on which the substrate is placed.

In general, a semiconductor device, an organic device, and a solar cell device deposit and etch a plurality of thin films to fabricate a device having desired characteristics.

In the case of a substrate processing apparatus for depositing or etching such a thin film, the process is performed at a high temperature (about 300 degrees or more). At this time, the temperature distribution of the substrate on which the thin film is deposited serves as a very important factor in the thin film deposition process. That is, when the temperature distribution of the substrate is not constant, a problem arises that the growth thickness of the thin film as well as the growth characteristics of the film change depending on the temperature distribution.

In the case of the conventional substrate processing apparatus, the substrate was heated using an electric heating means. That is, the upper substrate was heated by placing a hot wire as a heat source in the substrate settled portion where the substrate is placed and heating the substrate settled to high temperature. However, since the heating wire is thin, it is difficult to evenly distribute the substrate settled portion evenly.

Recently, the substrate was heated using an optical heating means. That is, a plurality of lamp heaters were disposed in the lower region of the substrate mounting portion on which the substrate was placed, and the substrate mounting portion was heated using the radiant heat of the lamp heater.

Radiant heat emitted from the lamp heater is radiated to the entire area of the lower side of the substrate settle. This allows the center area of the substrate settle to receive more radiant heat than the edge area. This means that the temperature of the central region of the substrate settling becomes higher. As a result, the temperature distribution of the substrate mounting portion becomes nonuniform, resulting in a problem that the temperature distribution of the substrate becomes nonuniform.

In order to solve the problems as described above, by providing a substrate processing apparatus capable of keeping the temperature distribution of the substrate settled by preventing radiant heat provided from the lamp heater located at the lower edge of the substrate settled to the center area of the substrate settled do.

A chamber having a reaction space according to the present invention, a substrate settled portion for placing a substrate in the chamber, lower heating means positioned under the chamber and heating the substrate settled by using radiant heat, and the substrate settled portion and the lower side Provided is a substrate processing apparatus including a radiant heat guide unit positioned between heating means to adjust temperature for each center region and edge region of the substrate setter.

It is effective that the radiant heat guide part is disposed perpendicularly to the substrate mounting part or horizontally with respect to the substrate mounting part in an area between the inner lamp heater part and the outer lamp heater part.

The lower heating means is located in the chamber lower space corresponding to the center region of the substrate settled portion and is located in the chamber lower space corresponding to the edge region of the substrate settled portion and an inner lamp heater portion having at least one lamp heater. It is preferable to include an outer lamp heater unit having at least one lamp heater.

The inner lamp heater and the outer lamp heater may be driven independently of each other.

It is effective that the radiant heat guide includes a radiant heat absorbing part having a cylindrical shape with its upper and lower sides opened.

The radiant heat absorbing part may be made of an opaque material including an Opark, ceramic, or opaque quartz.

When the radiant heat absorbing part sets the separation distance between the center of the inner lamp heater and the center of the outer lamp heater to be 100, it is effective to be disposed within a range of 0 to 50% based on the center of the inner lamp heater part.

The distance between the radiant heat absorbing portion and the substrate settlement portion is 0.1 to 50 mm, and the distance between the radiant heat absorbing portion and the bottom plate of the chamber is preferably 10 to 200 mm.

The substrate mounting portion includes a susceptor on which the substrate is placed, a drive shaft connected to the center of the susceptor, and a plurality of supports extending from the drive shaft to the bottom surface of the susceptor to fix and support the susceptor. The radiant heat absorbing portion has a cylindrical body portion and a plurality of cutting grooves provided in the cylindrical body portion, wherein the cutting groove has a groove shape cut upward from the lower side of the body portion, and the plurality of cutting portions It is effective that the plurality of supports are fitted into and fixed to each of the grooves.

The radiant heat guide may include a cover part covering an upper region of the radiant heat absorbing part.

The radiant heat guide part may include a plate-shaped body part arranged in parallel.

It is effective that the thickness of the central region of the body portion is thicker than the thickness of the edge region.

The body portion may become thicker from the edge region to the center region, or the center region may protrude.

It is effective that the body portion is made of an opaque material including O-park, ceramic or opaque quartz.

The substrate mounting portion includes a susceptor on which the substrate is placed, a drive shaft connected to the center of the susceptor, and a plurality of supports extending from the drive shaft to the bottom surface of the susceptor to fix and support the susceptor. The body portion preferably has a through hole through which a drive shaft passes, and a cutting groove into which a plurality of supports are fitted.

As described above, according to the present invention, a radiant heat guide may be provided between the heating means for dissipating radiant heat and the substrate mounting portion to make the temperature distribution of the substrate mounting portion uniform. That is, at least a portion of the radiant heat is concentrated in one region by blocking radiant heats traveling from the lower space of the edge portion of the substrate settle to the center region of the substrate settlement and from the lower space of the center portion of the substrate settle to the edge region of the substrate settlement. It can prevent.

In addition, the present invention can reduce the temperature variation of the substrate mounting portion by disposing a plate-shaped radiant heat guide portion parallel to the substrate mounting portion. At this time, the thickness of the neutralized region of the radiant heat guide part may be thickened to prevent the radiant heat from concentrating on the central area.

In addition, the present invention can fix the radiant heat guide to the support for fixing the susceptor of the substrate mounting portion may not add a separate fixing member and fixing device.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like numbers refer to like elements in the figures.

1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention. 2 is a plan view as viewed from the upper side of the substrate mounting portion according to the first embodiment. 3 is an exploded perspective view of the radiant heat guide according to the first embodiment. 4 is a cross-sectional conceptual view for explaining the arrangement of the radiant heat guide according to the first embodiment.

1 to 4, the substrate processing apparatus according to the present embodiment includes a chamber 100 having an internal reaction space, a substrate placing part 200 for placing the substrate 10 in the chamber 100, A first heating means 300 positioned below the chamber 100 to heat the substrate settlement part 200 using radiant heat, and a lower portion of the first heating means 300 positioned under the substrate settlement part 200. And a radiant heat guide part 500 for shielding a part of radiant heat. In addition, it may further include a second heating means 400 located above the chamber 100 to heat the reaction space.

The chamber 100 includes a chamber body 110, a bottom plate 120, and an upper plate 130 forming an inner space.

The chamber body 110 is manufactured in a substantially cylindrical shape. Of course, the present invention is not limited thereto and may be manufactured in a polygonal cylindrical shape. Part or all of the chamber body 110 is preferably made of a metallic material. In this embodiment, the chamber body 110 is manufactured using a material such as aluminum or stainless steel. At this time, the chamber body 110 serves as a side wall surface of the interior space of the chamber 100. Although not shown, a portion of the chamber body 110 may include a substrate entrance through which the substrate enters and a final connection portion of a gas supply device (not shown) for supplying a reaction gas to the reaction space.

The bottom plate 120 is made of a light transmissive plate. Through this, it is effective to allow the bottom plate 120 to transmit radiant heat from the outside of the chamber 100 (ie, the lower region thereof) to the reaction space (ie, the substrate setter 200) inside the chamber 100. . At this time, it is effective to use quartz as the bottom plate (120). Through this, the bottom plate 120 may act as a window for transmitting radiant heat. Of course, only a part of the bottom plate 120 may be made of a light transmissive plate, and the rest of the bottom plate 120 may be made of an opaque plate having excellent thermal conductivity.

The upper plate 130 serves as a dielectric plate between the reaction space and the upper energy source. In this embodiment, as shown in FIG. 1, the upper plate 130 is manufactured in a dome shape. However, the present invention is not limited thereto, and the production may be performed in a plate shape. In addition, the upper plate 130 may be made of a light transmissive plate. That is, the upper plate 130 may be manufactured using quartz. Through this, the radiant heat conducted in the reaction space of the chamber 100 toward the upper plate 130 passes through the upper plate 130, and the transmitted radiant heat is located on the upper plate 130. By reflecting by the upper plate 130 may be transmitted to the reaction space of the chamber 100 again. Of course, the present invention is not limited thereto, and the upper plate 130 may be made of a ceramic material.

And, although not shown, the chamber 100 may be equipped with a pressure regulator, a pressure measuring device and various devices for checking the inside of the chamber. In addition, a view port may be installed to look inside the reaction space from the outside of the chamber.

The substrate 10 is positioned in the reaction space of the chamber 100. At this time, the substrate settlement unit 200 is provided to set the substrate 10 on the reaction space.

In this case, as shown in FIGS. 1 and 2, the substrate setter 200 includes a susceptor 210 on which the substrate 10 is placed, a drive shaft 220 connected to the center of the susceptor 210, and A support unit 230 extending from the driving shaft 220 to the bottom surface of the susceptor 210 to fix and support the susceptor 210, and a driving unit to move the susceptor 210 through the driving shaft 220. 240.

The susceptor 210 is manufactured in substantially the same plate shape as the substrate 10. In addition, it is effective that the susceptor 210 includes at least one substrate settling region. Through this, the susceptor 210 may settle one or more substrates 10. In addition, the susceptor 210 may be made of a material having excellent thermal conductivity.

Through this, the susceptor 210 of the substrate setter 200 is heated by the radiant heat of the first heating means 300. The heated susceptor 210 may heat the upper substrate 10 to a process temperature.

The drive shaft 220 is connected to the susceptor 210 in the reaction space and extends outside the chamber 100. In this case, the driving shaft 220 penetrates the bottom plate 120 of the chamber 100. Therefore, a through hole may be formed in the bottom plate 120 of the chamber 100. Although not shown, a sealing means (eg, a bellows) may be provided around the through hole to seal the inside of the chamber 100.

In the upper region of the drive shaft 220, a plurality of supports 230 are provided to connect the drive shaft 220 and the susceptor 210.

The susceptor 210 may be supported more safely through the plurality of supports 230. That is, the susceptor 210 can be prevented from inclining or sagging to one side. In addition, the support shaft 230 allows the drive shaft 220 to be thinner (ie, diameter). In addition, the driving force of the driving shaft 220 may be effectively transmitted to the susceptor 210. For example, the rotational force of the drive shaft 220 may be effectively transmitted to the edge of the susceptor 210.

In addition, the driving shaft 220 provides the susceptor 210 with the moving force of the driving unit 240. The driving unit 240 may provide a lifting force or a rotation force to the drive shaft 220. Here, a stage including a plurality of motors may be used as the driver 240.

And, although not shown, the substrate mounting portion 200 of the present embodiment may further include a plurality of lift pins to help loading and unloading the substrate.

In the present embodiment, the first heating means 300 is disposed below the chamber 100 to heat the reaction space in the chamber 100 and the substrate 10 on the substrate setter 200. The first heating means 300 heats the substrate setter 200 using radiant heat.

Of course, the second heating means 400 may be further disposed in the upper region of the chamber 100. In this way, the heat source is disposed on the upper and lower sides of the chamber 100 to minimize the thermal deviation caused by the internal elements of the chamber 100. Through this, the thermal uniformity inside the chamber 100 may be improved, and thus the chamber temperature may be uniformly maintained during the semiconductor manufacturing process. The temperature inside the chamber 100 can be rapidly heated and cooled within a short time, thereby simplifying the semiconductor manufacturing process.

The first heating means 300 is located outside of the chamber 100, that is, below the bottom plate 120, to provide radiant heat energy to the substrate setter 200 in the chamber 100.

As such, in the present embodiment, the main heating means may be disposed outside the chamber 100, that is, outside the reaction space, thereby preventing the source of metal contamination due to the damage of the heating means. That is, in the conventional case, the main heating means was located inside the chamber 100, and included metal parts such as Mo, Fe, Ni, and heating elements (ie, SiC, graphite). This causes the metal parts of the heating means to be etched at high temperatures by means of process gases (eg Cl ₂ , HCl) supplied into the chamber to cause metal contamination. However, by placing the heating means outside the chamber 100 as in this embodiment, it is possible to prevent contamination by these metal parts.

Moreover, in this embodiment, an optical heat source is used as the first heating means 300. This heats the chamber 100 using the radiant heat emitted from the optical heat source of the first heating means 300. Here, the heating of the chamber 100 means that the substrate 10 located in the inner space and the inner space of the chamber 100 is heated.

The first heating means 300 includes an inner lamp heater 310 and an outer lamp heater 320 provided outside the inner lamp heater 310.

The inner lamp heater 310 is disposed at a position corresponding to the lower side of the center area of the substrate setter 200 to heat the center area of the substrate setter 200. The outer lamp heater 320 is disposed at a position corresponding to the lower side of the edge region of the substrate setter 200 to heat the edge region of the substrate setter 200.

The inner lamp heater 310 includes at least one inner lamp heater 311 and an inner power supply 312 that provides electric power to the inner lamp heater 311. The outer lamp heater unit 320 includes at least one outer lamp heater 321 and an outer power supply unit 322 that provides electric power to the outer lamp heater 321.

Here, the inner and outer lamp heaters 311 and 321 may be controlled at different temperatures by supplying the inner and outer electric power through different supply parts. Of course, the present invention is not limited thereto, and the inner and outer lamp heaters 311 and 321 may receive power through one power supply unit.

The inner and outer lamp heaters 311 and 321 are preferably manufactured in the shape of a circular ring (ie, a band). This is because the susceptor 210 of the substrate mounting portion 200 of the present embodiment is manufactured in a circular plate shape. Here, the inner and outer lamp heaters 311 and 321 have the same center point. And it is preferable that the diameter of the outer lamp heater 312 is larger than the diameter of the inner lamp heater 311. That is, it is effective that the inner and outer lamp heaters 311 and 321 are arranged in a concentric shape centering on the drive shaft 220 of the substrate mounting part 200.

Here, it is effective that the length of the radius of the inner lamp heater 311 is longer than the separation length between the inner lamp heater 311 and the outer lamp heater 312. This is because the radiant heat of the lamp heater can be concentrated in the center point region.

The present embodiment is not limited to the above description, and the lamp heaters 311 and 321 may be manufactured in a line form.

As described above, the inner and outer lamp heaters 310 and 320 are disposed below the bottom plate 120 made of quartz. In addition, the radiant heat of the lamp heater may be transmitted to the substrate setter 200 by passing through the bottom plate 120.

At this time, in the present embodiment, as shown in FIGS. 1 and 2, the radiant heat guide part 500 is disposed below the substrate mounting part 200. Through this, the radiant heat of the inner lamp heater 310 is provided to the center area of the substrate setter 200, and the radiant heat of the outer lamp heater 320 is provided to the edge area of the substrate setter 200. That is, the radiant heat guide part 500 absorbs radiant heat that travels toward the center region of the substrate setter 200 among radiant heats emitted from the outer lamp heater part 320. Through this, the radiant heat emitted from the outer lamp heater 320 is prevented from being provided to the center area of the substrate mounting part 200 and guided to the edge area. Through this, it is possible to prevent the concentration of radiant heat in the central region of the substrate setter 200. Therefore, the substrate mounting part 200 can be heated to a uniform temperature.

The radiant heat guide part 500 is fixed to the lower side of the substrate setter 200 as shown in FIG. 1. That is, the radiant heat guide part 500 is supported and fixed to the support 230 of the substrate mounting part 200. As a result, the radiant heat guide part 500 may move with the substrate setter 200.

As illustrated in FIG. 3, the radiant heat guide part 500 includes a tubular radiant heat absorbing part 510 having an open top and bottom sides, and an upper cover part 520 provided above the radiant heat absorbing part 510 of the bin. .

The radiant heat absorbing part 510 includes a body portion 511 of the barrel and a plurality of slit cutouts 512 provided in the body portion 511 of the barrel.

Here, the body portion 511 of the barrel is effective to use an opaque material that can absorb radiant heat. In addition, it is preferable to use a substance which does not generate particles by the gas used in the substrate treatment step. In this embodiment, the tubular body portion 511 is manufactured of an Opark material. Of course, the present invention is not limited thereto, and ceramic or opaque quartz may be used as the body portion 511. Preferably, the body portion 511 is preferably made of a material that absorbs 20 to 100% of the incident radiant heat. If the absorption rate is 20% or less, there is a disadvantage in that the radiant heat absorbing part 510 does not function smoothly.

As shown in FIG. 3, the body portion 511 may be manufactured in a circular cylindrical shape corresponding to the substrate placing portion 200. Of course, the present invention is not limited thereto and may be manufactured in an oval or polygonal tubular shape. In this case, the circle refers to the planar shape of the body portion 511.

The above-described cutting groove 512 has a groove shape thinly cut in the upper direction from the lower side of the body portion 511. The radiant heat absorbing part 510 may be inserted into the substrate support 230 of the substrate mounting part 200 by the cutting groove 512. As described above, the radiant heat guide part 500 may be supported and fixed to the lower side of the substrate setter 200. Therefore, it is effective that the width of the cutout groove 512 is equal to or larger than the width of the substrate support 230. In addition, the number of the cutout grooves 512 is preferably the same as the number of the substrate support 230. Then, the distance T1 between the radiant heat absorbing part 510 and the setter 210 of the substrate setter 200 may be adjusted by adjusting the depth of the cutout groove 512.

In this case, as shown in FIG. 3, it is effective that the separation distance T1 between the radiant heat absorbing part 510 and the substrate mounting part 200 is 0.1 to 50 mm. Here, when the separation distance T1 is smaller than the above range, the distance between the substrate setter 200 and the radiant heat absorbing part 510 is shortened, and the radiant heat absorbing part 510 takes away the heat of the substrate setter 200. The problem arises. In addition, when larger than the above range, a large amount of radiant heat of the outer lamp heater 320 is radiated from the upper portion of the radiant heat absorbing portion 510 to the center portion of the substrate mounting portion 200.

In addition, it is effective that the distance T2 between the radiant heat absorbing part 510 and the bottom plate 120 of the chamber 100 is 10 to 200 mm. Here, when the separation distance T2 is smaller than the above range, there is a problem that the substrate setter 200 does not move up and down smoothly. In addition, when larger than the above range, there is a problem that the radiant heat of the outer lamp heater 320 is radiated to the center area of the substrate mounting portion 200.

In addition, the radiant heat absorbing part 510 of the present embodiment is disposed between the spaced apart region of the inner lamp heater 310 and the outer lamp heater 320 of the first heating means 300 as shown in FIGS. 1 and 3. It is preferable to be located in the upper space. As a result, as shown in FIG. 1, the radiant heat emitted to the edge region of the substrate setter 200 is absorbed among the radiant heat of the inner lamp heater 310. Among the radiant heat of the outer lamp heater unit 320 absorbs the radiant heat emitted to the center area of the substrate mounting portion 200. Through this, the radiant heat of the inner lamp heater 310 may serve as a main heating source for heating the central region of the substrate setter 200. In addition, the radiant heat of the outer lamp heater 320 may serve as a main heating source for heating the edge region of the substrate setter 200.

Here, when the radiant heat absorbing part 510 sets the separation distance K1 between the center of the inner lamp heater 310 and the center of the outer lamp heater 320 to 100, the center of the inner lamp heater 310 is formed. It is effective to be arranged at a distance K2 in the range of 0 to 50% as a reference.

The inner diameter of the radiant heat absorbing part 510 is equal to the inner diameter of the inner lamp heater 310, or an inner diameter corresponding to 50% of the separation distance between the inner lamp heater 310 and the outer lamp heater 320. It means having

When the radiant heat absorbing part 510 is located at a position smaller than the range (ie, the inner region of the inner lamp heater part 310), most of the radiant heat of the inner lamp heater part 310 is applied to the substrate set part 200. Since it is impossible to transfer to the center area, a problem occurs that the heating efficiency of the substrate setter 200 is lowered. In addition, when the radiant heat absorbing part 510 is located at a position larger than the above range (ie, adjacent to the outer lamp heater part 320), a large amount of radiant heat of the outer lamp heater part 320 is absorbed by the radiant heat absorbing part 510. As a result, the waste of radiant heat is increased. In addition, since the area of the substrate mounting portion 200 to which the inner lamp heater 310 is to be heated increases, the amount of heat generated by the inner lamp heater 310 may be increased.

In addition, an upper cover part 520 is positioned above the radiant heat absorbing part 510 as illustrated in FIGS. 1 and 2. The upper cover part 520 includes an upper body part 521 made of a light-transmissive material and a through hole 522 provided at the center of the upper body part 521. It is preferable that the upper body portion 521 is made of a light-transmissive material so that the radiant heat of the inner lamp heater 310 positioned below is transmitted. In addition, it is effective to allow the driving shaft 220 of the substrate setter 200 to pass through the through hole 522.

As such, in the present exemplary embodiment, the radiant heat guide unit 500 is disposed under the substrate mounting unit 200 so that the radiant heat emitted from the space below the edge of the substrate mounting unit 200 in the space below the substrate mounting unit 200 may be reduced. Block the reaching of the central region. In addition, the radiant heat emitted from the lower space of the center of the substrate setter 200 in the lower space of the substrate setter 200 is blocked from reaching the edge region of the substrate setter 200. That is, only the radiant heat emitted from the space below the center region of the substrate setter 200 is heated, and only the radiant heat emitted from the space below the edge region of the substrate setter 200 is used. Thereby heating the edge region of the substrate set-up portion 200. This prevents radiant heat from concentrating on the central region of the substrate setter 200, thereby uniformly heating the entire surface of the substrate setter 200. That is, the temperature variation of the substrate setter 200 may be reduced. In the present embodiment, the inner lamp heater 310 and the outer lamp heater 320 may be independently driven to further reduce the temperature variation of the substrate setter 200.

The radiant heat guide unit 500 according to the present invention is not limited to the above description, and various modifications are possible. For example, an upper end of the radiant heat absorbing part 510 of the radiant heat guide part 500 may be provided with a stepped part for seating the edge region of the cover part 520. In addition, the radiant heat guide part 500 may omit the upper cover part 520. That is, it may be manufactured only by the radiant heat absorbing part 510 without the upper cover part 520. In addition, the radiant heat guide part 500 may integrally manufacture the radiant heat absorbing part 510 and the upper cover part 520. This means that the upper cover part 520 may be made of an opaque material. In addition, a reflective coating film may be formed on the inner and outer surfaces of the radiant heat absorbing part 510 of the radiant heat guide part 500 to reflect the radiant heat. In addition, a transmission window through which radiant heat is transmitted may be provided in a portion of the radiant heat absorbing part 510. Through this, some of the radiant heat radiated from the outer lamp heater 320 may be radiated to the center area of the substrate setter 200. This may control the amount of radiant heat radiated from the outer lamp heater 320 to the central region of the substrate setter 200. In addition, the inside of the radiant heat absorbing part 510 of the radiant heat guide part 500 may be filled with a light transmitting material that transmits radiant heat.

In the present embodiment, it may be further provided with a second heating means 400 positioned above the chamber 100 to provide thermal energy to the chamber 100.

The second heating means 400 is located above the chamber 100 to provide thermal energy to the chamber 100. It is effective to use a Belljar structure as the second heating means 400. In this embodiment, an electric heat source is used as the second heating means 400. Of course, it is not limited to this, An optical heat source can also be used.

As such, since the heat source is also provided in the upper region of the chamber 100, the inside of the chamber 100 may be uniformly heated, and heat loss may be blocked to the upper side of the chamber 100. In addition, the second heating means 400 may be positioned on the substrate 10 to provide thermal energy directly to the substrate 10. Therefore, the second heating means 400 having an electric heat source as in the present embodiment provides heat to the substrate 10 in which the temperature change is not sudden, thereby preventing damage to the substrate due to the rapid thermal change. do.

The second heating means 400 includes a heating body 410 covering the upper side of the chamber 100 and a heating wire 420 provided in the heating body 410. Although not shown, the second heating means 400 may further include a cooling passage. At this time, the lower bottom surface of the heating body 410 is effective to be reflective coating. Through this, the radiant energy transmitted through the upper plate 130 of the chamber 100 may be reflected back by the reflective coating and conducted to the reaction space of the chamber 100. This can reduce the loss of radiant energy.

That is, in the above-described embodiment, the radiant heat guide part disposed in a direction substantially perpendicular to the substrate mounting part 200 in the region between the inner lamp heater 310 and the outer lamp heater 320 of the first heating means 300. 500 has been described. However, the present invention is not limited thereto, and the radiant heat guide part may be disposed in a substantially horizontal direction with respect to the substrate mounting part 200. Through this, the radiant heat supplied from the outside of the chamber 100 to the inside may be uniformly provided with respect to the entire surface of the substrate mounting part 200. That is, concentration of radiant heat can be prevented.

The substrate processing apparatus according to the second embodiment will be described below. The description overlapping with the above-described first embodiment will be omitted. The description of the following description can be applied to the first embodiment.

5 is a cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention. 6 is a plan view of a radiant heat guide unit according to a second embodiment. FIG. 7 is a graph of experimental data obtained by measuring a temperature of a substrate setter according to a radiant heat guide unit according to a second embodiment. FIG. 8 to 10 are cross-sectional views of the radiant heat guide unit according to the modification of the second embodiment.

5 to 7, the substrate processing apparatus according to the present embodiment includes a chamber 100 having an internal reaction space, a substrate placing part 200 for placing the substrate 10 in the chamber 100, First heating means 300 positioned below the chamber 100 to heat the substrate set 200 using radiant heat, and positioned below the substrate set 200 in the chamber 100 to heat the first. And a radiant heat guide part 600 which uniformly provides the radiant heat of the means 300 to the substrate set-up part 200. In addition, it may further include a second heating means 400 located above the chamber 100 to heat the reaction space.

The radiant heat guide part 600 uniformly provides the radiant heat provided from the first heating means 300 outside the chamber 100 to the entire bottom bottom surface of the substrate mounting part 200. Through this, the temperature deviation according to the position of the substrate setter 200 may be reduced.

The radiant heat guide part 600 includes a plate-shaped body part 610 and a through hole 620 provided at the center of the body part 610 as shown in FIGS. 5 and 6.

Here, the body portion 610 is disposed parallel to the bottom surface of the substrate mounting portion 200. The body 610 covers the entire bottom surface of the substrate setter 200. In addition, the body portion 610 is manufactured in the same shape as the substrate mounting portion 200. In this embodiment, as shown in FIG. 6, the body 610 is manufactured in a circular plate shape.

The body portion 610 is effective to use an opaque material that does not transmit the radiant heat smoothly. Some of the radiant heat irradiated to the body 610 through this is transmitted directly to the body 610 is provided to the substrate mounting portion 200. In addition, a portion is provided to the substrate settle 200 after being refracted and diffracted in the body portion 610. In addition, a portion is reflected from the body portion 610. In addition, part of the body 610 is absorbed. In this case, the body 610 may be heated by the radiant heat absorbed by the body 610.

Here, when the body portion 610 is used as an opaque material, the amount of radiant heat that is directly transmitted through the body portion 610 to be provided to the substrate setter 200 is reduced compared to the case where the body portion 610 is not used. Of course, the amount absorbed by the body portion 610 is increased. Through this, the radiant heat provided to the substrate setter 200 may be made uniform, thereby reducing the temperature variation of the substrate setter 200. This is considered to be because radiant heat radiated from the first heating means 300 is absorbed or diffused by the body portion 610.

The body 610 is located inside the chamber 100. Therefore, it is preferable to use a substance which does not generate particles by the gas used in the substrate processing step. In this embodiment, the plate-shaped body portion 610 is manufactured of an OPAR material. Of course, the present invention is not limited thereto, and ceramic or opaque quartz may be used as the body 610. Here, the body 610 is disposed below the substrate setter 200. Therefore, the body 610 is effectively made of a material that absorbs 10 to 60% of the incident radiant heat. When the absorption rate is 10% or less, the temperature variation of the substrate setter 200 may not be reduced. In addition, when the absorption rate exceeds 60%, the substrate settling unit 200 may not be heated smoothly. In addition, in order to heat the substrate setter 200 to a target temperature, there is a disadvantage in that excessive power must be used.

As mentioned above, the radiant heat guide part 600 is disposed parallel to the lower side of the substrate setter 200. Therefore, a through hole 620 through which the drive shaft 220 of the substrate setter 200 passes is provided at the center of the body 610 of the radiant heat guide part 600. In this case, the body 610 may be fixed to the drive shaft 220 by the through hole 620. In addition, as shown in FIGS. 5 and 6, an incision groove 630 through which the support 230 of the substrate setter 200 passes may be further provided in the edge region of the body portion 610. At this time, the body portion 610 may be fixed to the support 230 by the incision groove 630. Of course, not limited to this, the body portion 610 may be fixed to the bottom surface of the chamber 100 by a predetermined fixing means. Of course, the body 610 may be fixed to the susceptor 210.

The temperature distribution of the upper surface of the substrate placing portion 200 when OPAR quartz was used as the body portion 610 of the radiant heat guide portion 600 was tested. The results are shown in the table of FIG.

In the table of FIG. 7, a line A is a graph showing a temperature distribution of the substrate setter 200 when the radiant heat guide part 600 of the present embodiment is not used, and a line B is a case where the radiant heat guide part 600 is disposed. It is a graph which shows the temperature distribution of the board | substrate settlement part 200 of this.

Therefore, when the radiant heat guide part 600 is not used, that is, the temperature deviation of the substrate mounting part 200 is large as shown by the A line. That is, the maximum temperature in the center region of the substrate setter 200 is 709 degrees while the minimum temperature in the edge region is 683 degrees. As such, it can be seen that the temperature deviation of the substrate setter 200 is about 26 degrees. This is because the radiant heat of the first heating means is concentrated in the central region of the substrate set-up portion 200.

However, it can be seen that the temperature deviation of the substrate settling unit 200 is improved by 50% or more, as shown in the case of B-line quartz plate disposed below the substrate settling unit 200 as the radiant heat guide part 600. That is, the maximum temperature of the substrate mounting portion 200 is 700 degrees and the minimum temperature is 691 degrees. That is, it can be seen that the temperature deviation of the substrate setter 200 is about 9 degrees.

As such, when heating the substrate setter 200 using the radiant heat, a temperature difference of the substrate setter 200 may be reduced by providing the radiant heat guide unit 600.

In addition, in the present embodiment, by varying the thickness of the center region and the edge region of the body portion 610, it is possible to further reduce the temperature deviation of the substrate set-up portion 200. That is, the thickness of the central region is made thicker than the edge region. As a result, the amount of radiant heat provided through the radiant heat guide part 600 is reduced in the center area, and the amount of radiant heat provided through the radiant heat guide part 600 is increased in the edge area.

That is, as in the modification of FIG. 8, the thickness becomes thicker from the edge region of the body portion 610 to the center region. That is, the radiant heat guide part 600 is manufactured in the form of a cone having a through hole formed at the center thereof. At this time, the upper surface of the body portion 610 is effective to be parallel to the substrate mounting portion 200. Of course, the present invention is not limited thereto, and the lower surface of the body 610 may be parallel to the substrate setter 200. In addition, the shape of the radiant heat guide part 600 is not limited to a cone, The cross-sectional shape may be a rhombic shape.

Through the structure as described above it is possible to increase the radiant heat absorption rate in the central region to lower the temperature of the central region. In addition, it is possible to increase the temperature of the edge region by reducing the radiant heat absorption in the edge region. Through this, the temperature deviation of the substrate setter 200 may be reduced.

In addition, as in the modification of FIG. 9, a central region of the body 610 may protrude. That is, by protruding the central region of the body portion 610 may be made thicker than the thickness of the edge region. At this time, the thickness of the body portion 610 in the edge region is 2 to 10mm, the thickness of the protruding center region is preferably 10 to 20mm. As a result, as described above with reference to FIG. 7, a more improved result can be obtained than the B line. At this time, it is effective that the width (diameter) of the protruding region is 20 to 80% of the overall width (ie, diameter) of the body portion 610. Preferably it is 20 to 60%.

Also, as in the modification of FIG. 10, the shapes of FIGS. 8 and 9 may be combined. That is, the body 610 may include a protruding center region, an edge region, and an inclined region that gradually increases in thickness between the protruding center region and the edge region. In this case, the temperature deviation of the substrate setter 200 may be reduced by adjusting the widths of the central area and the inclined area.

The present invention is not limited to the above-described embodiments, but may be implemented in various forms. That is, the above embodiments are provided to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and the scope of the present invention should be understood by the claims of the present application. .

1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

Figure 2 is a plan view from the top of the substrate mounting portion according to one embodiment.

3 is an exploded perspective view of the radiation guide according to one embodiment.

4 is a cross-sectional conceptual view illustrating an arrangement of a radiant heat guide according to an embodiment.

5 is a cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention.

6 is a plan view of a radiant heat guide unit according to a second embodiment;

7 is an experimental data graph of measuring the temperature of the substrate set-up part of the radiant heat guide part according to the second embodiment.

8 to 10 are cross-sectional views of a radiant heat guide unit according to a modification of the second embodiment.

<Explanation of symbols for major symbols in the drawings>

100: chamber 200: substrate mounting portion

300: first heating means 400: second heating means

500, 600: Radiant heat guide

Claims (15)

A chamber having a reaction space; A substrate settled portion for placing a substrate in the chamber; Lower heating means located under the chamber and heating the substrate settle part using radiant heat; And And a radiant heat guide unit positioned between the substrate setter and the lower heating means to adjust temperature for each of the center and edge regions of the substrate setter. The method according to claim 1, And the radiant heat guide part is disposed perpendicularly to the substrate mounting part or horizontally with respect to the substrate mounting part in an area between the inner lamp heater part and the outer lamp heater part. The method according to claim 2, wherein the lower heating means, An inner lamp heater part disposed in the chamber lower space corresponding to the center area of the substrate mounting part and having at least one lamp heater; And an outer lamp heater part disposed in the chamber lower space corresponding to an edge region of the substrate mounting part and having at least one lamp heater. The method according to claim 3, And the inner lamp heater part and the outer lamp heater part are driven independently of each other. The method according to claim 3, The radiant heat guide includes a radiant heat absorbing part having a cylindrical shape with upper and lower sides opened. The method according to claim 5, The radiation heat absorbing unit is a substrate processing apparatus made of an opaque material comprising an O-park, ceramic or opaque quartz. The method according to claim 5, And the radiant heat absorbing part is disposed within a range of 0 to 50% based on the center of the inner lamp heater part when the distance between the center of the inner lamp heater and the center of the outer lamp heater is 100. The method according to claim 5, The separation distance between the radiant heat absorbing portion and the substrate settlement portion is 0.1 to 50 mm, and the separation distance between the radiant heat absorbing portion and the bottom plate of the chamber is 10 to 200 mm. The method according to claim 5, The substrate mounting portion includes a susceptor on which the substrate is placed, a drive shaft connected to the center of the susceptor, and a plurality of supports extending from the drive shaft to the bottom surface of the susceptor to fix and support the susceptor. The radiant heat absorbing portion includes a cylindrical body portion and a plurality of cutout grooves provided in the cylindrical body portion. The cutting groove has a groove shape cut in the upper direction from the lower side of the body portion, the plurality of support grooves substrate processing apparatus is fixed to each of the plurality of cutting grooves. The method according to claim 5, The radiant heat guide includes a cover part covering an upper region of the radiant heat absorbing part. The method according to claim 2, And the radiant heat guide part includes a plate-shaped body part arranged in parallel. The method according to claim 11, And a thickness of the central region of the body portion thicker than a thickness of the edge region. The method according to claim 11, The thickness of the body portion becomes thicker from the edge region to the center region, or the substrate processing apparatus protrudes from the center region. The method according to claim 11, The body portion is a substrate processing apparatus made of an opaque material, including O-Park, ceramic or opaque quartz The method according to claim 11, The substrate mounting portion includes a susceptor on which the substrate is placed, a drive shaft connected to the center of the susceptor, and a plurality of supports extending from the drive shaft to the bottom surface of the susceptor to fix and support the susceptor. The body portion has a through hole through which the drive shaft passes through the center, A substrate processing apparatus having a cutting groove to which a plurality of supports are inserted and fixed.

Images