KR20100039473A - Apparatus for keeping reticle and equipment for manufacturing substrate - Google Patents

Abstract

Disclosed are a reticle storage device and a substrate processing facility having a haze removal function. The reticle storage device has a configuration including a reticle receptacle, a rattle conveyer and a haze removal unit. The reticle accommodating part accommodates a plurality of reticles, and the reticle conveying part conveys the reticle accommodated in the reticle accommodating part. The haze removing unit generates oxygen radicals for removing haze defects remaining on the surface of the reticle by irradiating a laser beam to the reticle that is moved to the transfer unit. The oxygen radicals thus formed react with organic particles that are haze defects to remove haze defects from the reticle.

Description

Apparatus for keeping Reticle and equipment for manufacturing substrate

The present invention relates to a reticle storage device and a substrate processing facility of the present invention, and more particularly, to a reticle storage device and a substrate processing facility capable of removing a haze depack using an excimer laser.

In general, a reticle is a type of exposure mask used in an exposure apparatus during a semiconductor process. The reticle is mainly used in a photo lithography process of transferring a design image onto a wafer by shrinking the original image enlarged using an optical lens at a constant magnification.

For example, in the photolithography process, light of a predetermined wavelength emitted from a light source is selectively projected through a reticle as an exposure mask through an aperture having a light condensing function, and then irradiated onto a wafer through a light collecting lens to selectively expose a photoresist film. Will be made.

In recent years, with the higher integration of semiconductor devices, the resolution required for photolithography has become higher, and light sources with shorter wavelengths have been used for realization thereof.

For example, a G-line light source with a wavelength of 463 nm is replaced with an I-line light source with a wavelength of 365 nm, and an ArF excimer laser light source having a vacuum ultraviolet light of 193 nm at a current wavelength of KrF excimer laser with a wavelength of 248 nm with ultraviolet light.

However, since the ArF excimer laser light source has a high energy level, chemical gas decomposes and is activated in the equipment during exposure, thereby causing a problem of sticking to a reticle or a lens and contaminating the surface. In particular, the residues left untreated during wet cleaning during the reticle manufacture further promote the adsorption of activated gases after exposure, and the adsorbed gases change the surface of the reticle to reduce the transmittance of light. This phenomenon is called haze.

The haze is caused by amines such as NH3 and SOx in the air and silane-based chemicals decomposed by an ArF laser irradiated during the exposure process and deposited on the lens or reticle surface in the state activated by NH4 +, SO42- and the like. In addition, the above-mentioned haze causes a change in the thickness of the surface of the reticle before and after exposure, thereby rapidly dropping the transmittance during the subsequent exposure process, resulting in process defects and deteriorating uniformity.

In order to prevent the removal of haze or the occurrence of the above-mentioned problems, the reticle, which is an exposure mask, has been periodically cleaned using an organic solvent or pellicles are replaced. However, this cleaning process reduces the lifetime of expensive reticles because it corrodes the reticle surface, which is an exposure mask, and the exchange of pels has the problem of increasing its cost.

An object of the present invention for solving the above problems is to provide a reticle storage device having a function that can remove the haze remaining on the reticle surface by using the F2 excimer laser.

Another object of the present invention for solving the above problems is to provide a substrate processing equipment having a function to remove the haze remaining on the surface of the reticle by using an F2 excimer laser.

Reticle storage device according to an embodiment of the present invention for achieving the above object has a configuration including a reticle accommodating portion, a rackle conveying portion and a haze removing portion. The reticle accommodating part accommodates a plurality of reticles, and the reticle conveying part conveys the reticle accommodated in the reticle accommodating part. The haze removing unit generates oxygen radicals for removing haze defects remaining on the surface of the reticle by irradiating a laser beam to the reticle that is moved to the transfer unit. The oxygen radicals thus formed may react with organic particles that are haze defects to remove haze defects from the reticle.

As an example, the haze removal unit may have a configuration including an oxygen gas injection unit for providing oxygen gas to the surface of the reticle and an excimer laser for forming oxygen radicals by irradiating an excimer laser beam to the reticle provided with the oxygen gas. have.

As an example, the excimer laser beam irradiated from the excimer laser may have a wavelength of 165 to 180 nm, and the reticle may have a pellicle formed therein.

A substrate processing apparatus according to an embodiment of the present invention for achieving the above object is a haze removal unit for removing the haze defects remaining on the surface of the reticle and an exposure apparatus for forming a photoresist pattern on the substrate using the reticle It has a configuration to include. The haze removal unit includes an oxygen gas injection unit for providing oxygen gas to a reticle surface and an excimer laser for generating oxygen radicals for removing haze defects by irradiating an excimer laser beam to a surface of the reticle provided with oxygen gas. The exposure apparatus includes an exposure apparatus for irradiating the projection light reflecting the image of the reticle pattern on the semiconductor substrate using the reticle via the haze removal unit.

The reticle storage device and the substrate processing apparatus including the haze removal unit as described above may remove the haze defects adsorbed on the surface of the reticle due to the exposure process during the storage process of the reticle without performing a separate wet cleaning. Accordingly, a separate wet cleaning process is not frequently required to prevent damage to the reticle as well as to reduce production management costs and time.

Hereinafter, a reticle storage device and a substrate processing apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments, and those skilled in the art may implement the present invention in various other forms without departing from the technical spirit of the present invention. The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention.

Singular expressions include plural expressions unless the context clearly indicates otherwise, and the terms "comprises" or "consists of" include, but are not limited to, features, numbers, steps, operations, components, parts or parts described in the specification. It is to be understood that the present invention is intended to indicate that there is a combination of and does not preclude the presence or addition of one or more other features or numbers, steps, operations, components, parts or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art, and are not construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

Reticle storage device

1 is a view for explaining a reticle storage device according to an embodiment of the present invention.

Referring to FIG. 1, the reticle storage device 100 according to the present embodiment includes a reticle accommodating part 110, a recicle conveying part 120 for conveying a reticle M, and a haze removing part 150 for irradiating an excimer laser beam. To have a configuration.

The reticle accommodating part 110 has a space in which the number of reticles M is accommodated. The reticle M accommodated in the reticle accommodating part 100 is an exposure mask in which a metal circuit pattern is formed on a quartz substrate having light transmittance. For example, the reticle M may have a Mo / Si multilayer film (MF) pattern in which a molybdenum layer and a silicon layer are stacked, and may have a structure in which a pellicle is further formed.

The reticle transfer part 120 is provided at one side of the reticle accommodating part 110 or inside the haze removing part 150, and the reticle M accommodated or accommodated in the reticle accommodating part 110 to the outside. It is a reticle transportation means to convey. As an example, the reticle transfer unit 120 is a transfer rail (not shown) for primarily transporting the reticle and a transfer arm (not shown) that grips the side surfaces of the reticle and moves in the X and Y axes. It may include. As another example, the lake conveying unit 120 may be a conveying head that operates in the X-axis, Y-axis, and Z-axis to bring the reticle into the reticle accommodating portion or to convey the reticle accommodated in the reticle accommodating portion to the outside. Although not shown in the drawing, the reticle transfer unit 120 may set and control the grip of the reticle M or the transfer position of the reticle M by a separate control unit.

The haze remover 150 is provided on one side of the reticle accommodating part 110 as illustrated in FIG. 2 and excimer irradiates an excimer laser beam to remove the haze defect H remaining on the surface of the reticle M. It has a configuration including a laser 152 and the oxygen gas injection unit 154.

Specifically, the oxygen gas injection unit 154 included in the haze removal unit 150 provides oxygen gas for generating oxygen radicals for oxidizing organic particles of haze defects adsorbed on the surface of the reticle M. . As an example, the oxygen gas injection unit 154 is a nozzle that receives oxygen gas and injects oxygen gas onto the surface of the reticle.

The excimer laser 152 included in the haze remover 150 is provided on a path through which the reticle M is transported and has a wavelength of about 165 to 180 nm on the surface of the reticle M provided with oxygen gas. It is an excimer laser light source which irradiates a beam. Preferably it is an F2 excimer laser light source which irradiates a laser beam with a wavelength of 172 nm. Here, the excimer laser beam may be irradiated as if the front surface of the reticle is scanned for 3 to 5 seconds. In particular, the excimer laser is preferably provided to irradiate the excimer laser beam toward a second surface corresponding to the first surface of the pellicle P or the reticle M on which the metal circuit pattern is formed. The laser beam provided to the reticle surface in the haze remover 150 decomposes the oxygen gas provided to the reticle surface through the oxygen gas injection unit 154 to form oxygen radicals. The oxygen radicals thus formed react with the organic particles corresponding to the haze defect (H) to remove the haze defect from the reticle surface. As another example, when the pellicle (P) is formed in the reticle (M) it is reacted with the haze defect (H), which is an organic particle to remove the haze defect (H) as a surface of the pellicle (P).

The reticle storage device 100 including the haze removal unit 150 having the above-described configuration may remove the haze defects adsorbed on the surface of the reticle due to the exposure process during the storage process of the reticle without performing separate wet cleaning. Can be. Accordingly, a separate wet cleaning process is not frequently required to prevent damage to the reticle as well as to reduce production management costs and time.

Substrate Processing Equipment

3 is a schematic diagram illustrating a semiconductor substrate processing facility according to another embodiment of the present invention.

Referring to FIG. 3, the substrate processing apparatus 200 may include an exposure apparatus 250 for exposing a photoresist film coated on a substrate, an interface chamber 260, a reticle exchange chamber 270 containing a reticle, and a haze removing unit ( 310).

In this embodiment, the exposure apparatus 270 approaches the reticle having a predetermined circuit pattern formed on the semiconductor substrate W coated with the photoresist film, and then reticles light having a specific wavelength at which the photoresist film may cause a photochemical reaction. Is a device that projects light having an image of the circuit pattern onto a photoresist film.

As an example, the exposure apparatus 270 is largely comprised of a light source 272, an illumination member 274, a reticle stage 275, a projection member 276, and a substrate stage 278. Specifically, the illumination member 274, the reticle stage 275, and the projection member 276 are sequentially disposed between the light source 272 and the semiconductor substrate W, and the semiconductor substrate W is disposed on the substrate stage 278. Supported.

The light source 272 generates light to be irradiated on the photoresist film applied on the upper surface of the semiconductor substrate W. As the light source, a light source having an far ultraviolet (DUV) wavelength such as an ArF excimer laser or a KrF excimer laser, or a light source having a vacuum ultraviolet (VUV) wavelength such as an F2 laser or an Ar2 laser may be used. For example, a fluoride krypton laser that emits a krypton fluoride (KrF) laser beam having a wavelength of 248 nm from a light source 272, an argon fluoride laser that emits an argon fluoride (ArF) laser beam having a wavelength of 193 nm, a wavelength of 157 nm. A florin laser or the like that emits a florin (F2) laser beam may be emitted.

The illumination member 274 changes the light generated from the light source 272 into illumination light having parallel directionality. The illumination member may be composed of a plurality of alignment lenses, filters, and the like, such as a fly's eye lens or a cylindrical lens. Accordingly, the light generated from the light source 272 passes through the alignment lens and the filter to be uniformly distributed and uniformly distributed illumination light and then concentrated on the reticle R of the reticle stage 275. As a result, the illumination light passes through the reticle M while the circuit pattern image of the reticle M is reflected.

The reticle stage 275 may be disposed under the lighting member to support the reticle and to move the reticle to have a predetermined position with the semiconductor substrate.

The projection member 276 is provided between the reticle stage 275 and the substrate stage 278, and serves to reduce and project the illumination light passing through the reticle M onto the photoresist film of the semiconductor substrate. When the substrate stage 278 adsorbs and supports the semiconductor substrate W, the semiconductor substrate W may be horizontally moved along the X-axis and the Y-axis in order to align the exposure area of the reticle and the substrate.

The reticle exchange room 270 has a space for storing a plurality of reticles at atmospheric pressure, and includes a conveyance hand (not shown). The transfer hand may be a transfer arm for carrying in and transferring the reticle M between the interface chamber 260 and the reticle exchange chamber 270.

The interface chamber 260 is provided between the reticle exchange chamber 270 and the exposure apparatus 250 to provide a space for mediating the reticle exchange chamber 270 and the exposure apparatus. That is, the interface chamber 260 provides a space in which the reticle on the reticle stage 275 can be brought in and out of the reticle exchange chamber 270. As an example, the transfer chamber 262 or the transfer tray may be provided in the interface chamber 260 to transfer the reticle. The transfer arm 262 may provide an fp tickle to the exposure apparatus 250 and move the reticle used in the exposure apparatus 250 to the reticle exchange chamber 270.

The haze removal unit 310 is provided to be adjacent to the movement path of the transfer arm 262. As an example, the haze removal unit 310 may be provided in the interface chamber 260 or between the exposure apparatus 250 and the interface chamber 260 or the interface chamber 260 and the reticle exchange chamber 270. The haze removal unit 310 includes an oxygen gas providing unit and an excimer laser as shown in FIG. 2, and is disposed on a lower surface of the reticle immediately before or immediately after being introduced into the reticle exchange chamber 270 by the transfer arm 262. Oxygen radicals are generated by irradiating a laser to remove the existing haze defects.

The reticle storage device and the substrate processing apparatus including the haze removal unit as described above remove the haze defects adsorbed on the surface of the reticle due to the exposure process without generating a separate wet cleaning process to generate oxygen radicals during the storage process of the reticle. can do. Accordingly, a separate wet cleaning process is not frequently required to prevent damage to the reticle as well as to reduce production management costs and time. In addition, it is not necessary to secure a space for performing the in-line cleaning process, and it is possible to reduce the cost of remanufacturing due to the investment of inspection equipment and the extension of the life of the reticle.

1 is a view for explaining a reticle storage device according to an embodiment of the present invention.

FIG. 2 is a diagram for specifically describing a haze removing unit illustrated in FIG. 1.

3 is a schematic view illustrating a semiconductor substrate processing facility according to another embodiment of the present invention.

Claims (7)

A reticle accommodating portion in which reticles are accommodated; A reticle transfer unit configured to receive / return the reticle to the reticle accommodation unit; And And a haze removal unit for irradiating an excimer laser beam to the reticle to remove haze defects remaining on the surface of the reticle moved to the reticle transfer unit. The method of claim 1, wherein the haze removing unit An oxygen gas injection unit providing oxygen gas to the reticle surface; And And an excimer laser irradiating an excimer laser beam to the reticle provided with the oxygen gas to form oxygen radicals. The reticle storage device according to claim 1, wherein the excimer laser beam has a wavelength of 165 to 180 nm, and the reticle has a pellicle formed therein. A haze removal unit including an oxygen gas injection unit for providing oxygen gas to the reticle surface and an excimer laser for generating oxygen radicals for removing haze defects by irradiating an excimer laser beam to a surface of the reticle provided with oxygen gas; And And an exposure apparatus for irradiating the projection light reflecting the image of the reticle pattern onto the semiconductor substrate by using the reticle via the haze removal unit. The semiconductor substrate processing facility of claim 4, wherein the excimer laser beam is irradiated to a second surface corresponding to the first surface of the reticle on which the pellicle or the circuit pattern is formed. 5. The semiconductor substrate processing facility of claim 4, further comprising a reticle exchanger in communication with the exposure apparatus through an interface chamber to perform the photoresist film forming process. 7. The semiconductor substrate processing facility of claim 6, wherein the haze removal unit is installed in the interface chamber.

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