KR20100045072A - Apparatus for treatment of plural substrates - Google Patents

Abstract

A multi-substrate processing apparatus is disclosed. The chamber has a reaction space therein. The substrate support is rotatably installed in the chamber and is provided with substrate mounting parts to allow a plurality of substrates to be seated along the periphery of the center of rotation. The substrate support pins are formed to support the substrates seated on the substrate mounting parts from the lower side, and each lower end is formed to protrude through the substrate support. The edge ring is formed to be mounted on each edge of the substrates seated on the substrate mounting portions, and the bottom ring is formed to protrude through the substrate support. The support pin holder is formed to contact each bottom of the substrate support pins and the bottom of the edge ring at the lower side of the substrate support such that the edge ring with the substrate support pins is brought up or down with respect to the substrate seats when the substrate support is raised or lowered. do. Therefore, it is possible to prevent the substrate from being separated from the substrate seating part during the process of the plurality of substrates, to prevent the thin film from being deposited on the edge of the substrate, and to prevent contamination of the lower surface of the substrate and the upper surface of the substrate seating part. have.

Description

Apparatus for treatment of plural substrates}

The present invention relates to a substrate processing apparatus for manufacturing a semiconductor device, and more particularly, to a multi-substrate processing apparatus capable of processing a process on a plurality of substrates at once.

In order to manufacture a semiconductor device, it is subjected to various processes such as deposition and etching on a substrate. The process is generally performed in a chamber of a substrate processing apparatus. For example, in the case of a chemical vapor deposition (CVD) process, the substrate processing apparatus includes a substrate support and a gas injection unit in the chamber together with the chamber.

The substrate support has a substrate mounting portion for mounting the substrate on the upper surface, and can be heated by the heat generating means. The substrate support is rotatable by the rotation driving means or can be lifted by the lifting driving means. The gas injector is disposed above the substrate support to inject the deposition gas toward the rotating substrate support, so that the thin film is deposited on the substrate seated on the substrate seat of the substrate support.

On the other hand, in order to improve the productivity, a multi-substrate processing apparatus for supplying a plurality of substrates in a chamber at a time to process the process has been proposed. Here, the multi-substrate processing apparatus includes substrate seating portions to arrange the substrates on the upper surface of the substrate support along the rotation center of the substrate support.

However, in the conventional multi-substrate processing apparatus, the substrates mounted on the substrate mounting portion are generally placed on the substrate mounting portions by their own weight. Accordingly, there is a possibility that the substrate may not be completely adhered to the substrate mounting portion by centrifugal force in the process of rapidly rotating the substrate support or by vibration in the process of lifting and lowering.

In addition, there is a possibility that the substrate may not be completely adhered to the substrate mounting portion due to various causes such as rapid gas flow change in the chamber or substrate thermal deformation due to a process performed in a high temperature environment.

As a result, a microcavity is formed between the lower surface of the substrate and the upper surface of the substrate mounting portion, and the deposition gas penetrates into the space to contaminate the lower surface of the substrate or the upper surface of the substrate mounting portion. In addition, since the thin film may be deposited on the edge of the substrate, when the thin film is not to be deposited on the edge of the substrate in the semiconductor process, there may be a problem that a process for removing an unnecessary deposited portion should be added. This may cause a decrease in productivity.

An object of the present invention is to solve the above problems, to prevent the substrate from being separated from the substrate mounting portion during the process of the plurality of substrates, to prevent the thin film is deposited on the edge of the substrate, And to provide a multi-substrate processing apparatus that can prevent the upper surface of the substrate mounting portion is contaminated.

A multi-substrate processing apparatus according to the present invention for achieving the above object is a chamber having a reaction space therein; A substrate support rotatably installed in the chamber, the substrate support having substrate mounting parts on a top surface thereof, the substrate mounting parts being mounted on the upper surface of the chamber; Substrate support pins formed to support the substrates seated on the substrate seating portions from below, and each lower end of the substrate support pins protruding from the substrate supporter; An edge ring formed on each edge of the substrates seated on the substrate seating portions, and an edge ring formed at a lower end thereof to protrude through the substrate supporter; And formed at the lower side of the substrate support to be in contact with each lower end of the substrate support pins and the lower end of the edge ring, so that the edge ring together with the substrate support pins when the substrate support is raised or lowered to the substrate seats. And a support pin holder to be proximate or spaced apart.

According to the present invention, the substrates can be prevented from falling out of the substrate seating portions during the process. In addition, the deposition gas may be blocked from entering each edge of the substrates seated on the substrate seating portions. Therefore, it is possible to prevent the thin film from being deposited on each edge of the substrates and to contaminate the lower surface of the substrate or the upper surface of the substrate mounting portion.

In addition, according to the present invention, even when the height error of each of the substrate mounting portion occurs during manufacture or assembly of the substrate support, the edge rings operate independently of each other, so that each edge of all the substrates seated on the substrate mounting portions can be covered without a gap. Can be.

Further, according to the present invention, since the edge ring can be lifted by the support pin holder together with the substrate support pins when the substrate support is lifted, a separate driving means for lifting the edge ring may not be required.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic configuration diagram of a multi-substrate processing apparatus according to a first embodiment of the present invention. 2 is an exploded perspective view showing the substrate support, the edge ring, and the substrate support pin in the multi-substrate processing apparatus shown in FIG. 1.

1 and 2, the multi-substrate processing apparatus 100 is for supplying a plurality of substrates W into the chamber 110 at a time and processing them. The chamber 110, the substrate support 130, And a substrate support pin 140, an edge ring 150, and a support pin holder 160.

The chamber 110 has a reaction space therein. Here, the reaction includes a semiconductor manufacturing process or a liquid crystal panel manufacturing process reaction. That is, the chamber 110 is a semiconductor manufacturing process or a liquid crystal panel manufacturing process in the internal space, for example, may be a vacuum chamber for performing a chemical vapor deposition (CVD) process.

The gas injection unit 120 may be disposed above the chamber 110. The gas injector 120 may inject a process gas, for example, a deposition gas, toward the substrate support 130, so that a thin film may be deposited on the substrates W mounted on the substrate support 130.

The substrate support 130 allows the plurality of substrates W to be seated and supported. Here, the substrate W may collectively be a wafer and a glass substrate. The substrate support 130 is installed to be rotatable and liftable in the inner space of the chamber 110. Here, the substrate support 130 may be rotatable by the rotation driving means (not shown), and may be liftable by the lifting driving means (not shown).

The substrate support 130 is provided with substrate mounting parts 131 on the upper surface such that the plurality of substrates W are seated along the circumference of the rotation center. The substrate mounting portion 131 may be formed in various structures in which the substrate W may be mounted. For example, the substrate mounting portion 131 may have a concave shape from an upper surface of the substrate support 130 so that the substrate W may be accommodated thereon. have.

A plurality of substrate support pins 140 are provided, and the plurality of substrate support pins 140 are formed to support the substrates W seated on the substrate seating portions 131 from the lower side, and each lower end of the substrate support pins 130. It is formed to protrude through).

The substrate support pins 140 allow the substrate W to be easily loaded or unloaded into the chamber 110. That is, when the substrate W is supplied into the chamber 110, the substrate support pins 140 lower the substrate W in a state where the substrate W is raised from the substrate seating portion 131, and then lower the substrate seating portion 131. To be loaded. In addition, when the substrate W is discharged from the chamber 110, the substrate support pins 140 are raised with the substrate W mounted on the substrate seat 131 so that the substrate seat 131 is raised. Unload from

The edge ring 150 is formed to be mounted on each edge of the substrates W mounted on the substrate mounting parts 131, and the bottom ring 150 is formed to protrude through the substrate support 130. The edge ring 150 may prevent the substrates W, which are seated by the weight of the substrate seats 131, from falling out of the substrate seats 131. In addition, the edge ring 150 may prevent the deposition gas from flowing into each edge of the substrates W mounted on the substrate mounting parts 131.

Accordingly, the thin film may be prevented from being deposited on each edge of the substrates W. As shown in FIG. In addition, it is possible to prevent deposition gas from penetrating between the lower surface of the substrate W and the upper surface of the substrate mounting portion 131, thereby preventing contamination of the lower surface of the substrate W or the upper surface of the substrate mounting portion 131.

The support pin holder 160 is formed to contact each lower end of the substrate support pins 140 and the lower end of the edge ring 150 at the lower side of the substrate support 130. The support pin holder 160 allows the edge ring 150 to be proximate or spaced apart from the substrate seating portions 131 along with the substrate support pins 140 when the substrate support 130 is raised or lowered.

That is, when the substrate support 130 is lowered, the lower ends of each of the substrate support pins 140 and the lower end of the edge ring 150 are in contact with the support pin holder 160 and the substrate support pins 140 and the edge ring 150. ) May be spaced apart from the substrate seating portions 131. On the contrary, when the substrate support 130 is raised, the substrate support pins 140 are separated from each lower end of the substrate support pins 140 and the lower end of the edge ring 150 while being in contact with the support pin holder 160. And the edge ring 150 may be lowered to the substrate seating portions 131 by their own weight and approach.

As such, when the edge of the substrate support 130 is elevated, the edge ring 150 may be elevated by the support pin holder 160 together with the substrate support pins 140, and thus, separate driving means for lifting the edge ring 150. This may not be necessary.

Meanwhile, a plurality of edge rings 150 are provided to correspond to the substrates W mounted on the substrate seats 131, one by one, so that the edge rings 150 may be independent of each other. It is desirable to operate in proximity or apart. That is, the edge rings 150 may be separated from each other, and have a structure that may cover each edge of the substrates W by one-to-one correspondence to the substrates W mounted on the substrate mounting portions 131.

Accordingly, even when the height error of each of the substrate seating portions 131 occurs during the manufacture or assembly of the substrate support 130, the edge rings 150 operate independently of each other to allow all the seated portions to be seated on the substrate mounting portions 131. Each edge of the substrates W may be covered without a gap.

In addition, as a comparative example, if the edge rings are all connected, the edge portion may sag due to its own weight. Therefore, the edge rings should be thickened to prevent this. Then, more installation space of the edge ring must be secured in the chamber, and larger driving force is required for the lifting of the edge ring. In addition, the manufacturing cost of the edge ring can also rise. However, if the edge rings 150 are separated from each other as in this embodiment, since the respective thicknesses of the edge rings 150 may be thinner than in the comparative example, the above-described problem may be solved.

The length at which the edge ring 150 protrudes to the lower side of the substrate support 130 is preferably set longer than the length at which the substrate support pin 140 protrudes to the lower side of the substrate support 130. This causes a gap between the edge ring 150 and the substrate support pin 140 with the substrate support pins 140 raised to load or unload the substrate W on the substrate seat 131. This is to allow the substrate W to be easily supplied or discharged therebetween. The edge ring 150 may be made of a ceramic-based material.

On the other hand, the substrate support pin 140 may be inserted into the support pin hole 131 penetrated vertically through the substrate support 130 may be guided by the lifting movement. Here, the substrate support pin 140 is provided with a head 141 having a diameter larger than the diameter of the support pin hole 131 at the top, the substrate support 130 in the lower end is separated from the support pin holder 160 May not fall down. In addition, at least three substrate support pins 140 may be provided to stably support the substrate W for each substrate seating part 131.

The edge ring 150 may include a ring body 151 formed to cover the edge of the substrate W, and a plurality of ring legs 152 protruding from the lower end of the ring body 151. Here, when the substrate W is formed of a circular plate, the ring body 151 may be formed of a circular ring to cover the edge of the circular substrate.

In addition, the ring legs 152 may be inserted into the edge ring hole 132 that is vertically penetrated to the substrate support 130 to receive a reciprocal motion. The ring legs 152 are provided with at least three or more so that the ring body 151 can be stably elevated. In this case, the ring legs 152 are preferably arranged so as not to cause interference in the process of loading or unloading the substrate W onto the substrate support pins 140. For example, if three ring legs 152 are provided, the two ring legs are positioned as far apart as possible from side to side with respect to the direction in which the substrate W is loaded or unloaded, and the other one ring leg is two ring legs. It can be located between them.

An operation of the multi-substrate processing apparatus 100 according to the first embodiment of the present invention configured as described above will be described below with reference to FIGS. 3 and 4.

First, as shown in FIG. 3, the substrate support 130 is lowered to load the substrates W into the substrate mounting portions 131 of the substrate support 130. Then, the substrate support pins 140 and the edge ring 150 are supported by the support pin holder 160 while each end of the substrate support pins 140 and the end of the edge ring 150 are in contact with the support pin holder 160. This rises and is spaced apart from the substrate seating portion 131. In this state, the substrates W are supplied between the substrate support pins 140 and the edge ring 150 to be mounted on the substrate support pins 140.

Thereafter, as shown in FIG. 4, the substrate support 130 is raised. Then, while each end of the substrate support pins 140 and the end of the edge ring 150 is separated from the support pin holder 160, the substrate support pins 140 and the edge ring 150 are lowered by their own weight so that the substrate Proximity from the seating portions 131. At this time, the substrate support pins 140 are lowered to allow the substrates W to be seated on the substrate seating portions 131, and the edge ring 150 is lowered to be placed on the edges of the substrate W to be covered.

Subsequently, the thin film is deposited on the substrates W by rotating the substrate support 130 and injecting the deposition gas from the gas injector 120. In this process, even if a centrifugal force due to the rapid rotation of the substrate support 130, a sudden gas flow change in the chamber 110, or a substrate thermal deformation due to a process performed in a high temperature environment occur, the substrate W They may not escape out of the substrate seats 131 by the edge ring 150. In addition, the deposition gas may be blocked from being introduced into each edge of the substrates W mounted on the substrate mounting parts 131 by the edge ring 150. Accordingly, thin film deposition may be prevented at each edge of the substrates W, and contamination of the lower surface of the substrate W or the upper surface of the substrate mounting portion 131 may be prevented.

When deposition is completed on the substrates W, the substrate support 130 is lowered to unload the substrates W. FIG. Then, as shown in FIG. 4, the substrate support pins 140 and the edge ring 150 are raised to be spaced apart from the substrate seating portion 131. In this state, the substrates W mounted on the substrate support pins 140 are discharged out of the chamber 110.

5 is a schematic configuration diagram of a multi-substrate processing apparatus according to a second embodiment of the present invention. Here, the same reference numerals as in the previous drawings represent the same components having the same function, detailed description thereof will be omitted. The same applies to the following embodiments.

Referring to FIG. 5, the multi-substrate processing apparatus 200 according to the present exemplary embodiment has a structure in which a gas flow path 234 and a gas outlet 235 are formed in the substrate support 130. The gas flow path 234 is formed such that an inert gas having a pressure higher than the internal pressure of the chamber 110 is supplied into the substrate support 130 from the outside. In addition, the gas flow path 234 is formed in communication with the gas outlets 235, so that the inert gas supplied from the outside may be discharged to the gas outlets 235.

The gas outlets 235 are formed such that the inert gas supplied to the gas flow path 234 is discharged next to each edge of the substrates W mounted on the substrate mounting parts 131. Here, at least one gas outlet 235 may be formed around the edge of each substrate seating portion 131. The inert gas discharged from the gas outlet 235 diffuses between the edge of the substrate W and the edge ring 150 without reacting with the deposition gas so that a pressure higher than the internal pressure of the chamber 110 can be generated therebetween. . Accordingly, it is possible to further increase the effect of blocking deposition gas from flowing between each edge of the substrates W mounted on the substrate mounting parts 131 and the edge ring 150.

6 is a schematic structural diagram of a multi-substrate processing apparatus according to a third embodiment of the present invention. Referring to FIG. 6, the multi-substrate processing apparatus 300 according to the present exemplary embodiment includes a purge ring 370 at the gas outlet 235. The purge ring 370 allows to regulate the gas flow exiting the gas outlet 235. That is, the purge ring 370 may adjust the gas discharge or the gas flow path discharged through the gas outlet 235 according to the size and shape. Accordingly, it is possible to more effectively block deposition gas from being introduced between each edge of the substrates W mounted on the substrate mounting parts 131 and the edge ring 150. The purge ring 370 may be manufactured separately and installed in the gas outlet 234, or may be integrally formed with the substrate support 130.

7 is a schematic structural diagram of a multi-substrate processing apparatus according to a fourth embodiment of the present invention. Referring to FIG. 7, in the multi-substrate processing apparatus 400 according to the present exemplary embodiment, a bypass 434 is formed on the substrate support 130.

The bypass 434 is formed by penetrating the substrate support 130 so that the purge gas supplied into the chamber 110 can bypass the side edges of the substrates W mounted on the substrate mounting portions 131. Here, the bypass 434 may be formed in at least one or more around the edge of each of the substrate mounting portion 131.

As the purge gas in the chamber 110 passes between each edge of the substrates W and the edge ring 150 through the bypass 434, each edge of the substrates W seated on the substrate mounting portions 131. And the effect of blocking the deposition gas from flowing between the edge ring 150 may be further enhanced. On the other hand, the detour 434 may be further provided with a purge ring 370 of the third embodiment of the present invention described above.

8 is a schematic structural diagram of a multi-substrate processing apparatus according to a fifth embodiment of the present invention. Referring to FIG. 8, in the multi-substrate processing apparatus 500 according to the present embodiment, the support pin holder 560 may be lifted and lowered. The support pin holder 560 may be elevated by the lifting driving means 580. As the support pin holder 560 moves up and down, the substrate support pins 140 and the edge ring 150 may move up and down, respectively.

That is, when the support pin holder 560 is raised, each end of the substrate support pins 140 and the end of the edge ring 150 are in contact with the support pin holder 560 and the substrate support pins 140 and the edge ring ( 150 may be spaced apart from the substrate seating portions 131 by rising. On the contrary, when the support pin holder 560 is lowered, each of the lower ends of the substrate support pins 140 and the lower end of the edge ring 150 are separated from the state in which the support pin holder 560 is in contact with the substrate support pins 140. And the edge ring 150 may descend to the substrate seating portions 131 by their own weight and may be in close proximity.

On the other hand, in the present embodiment, the substrate support 130 is also capable of lifting, thereby lifting the substrate support 130 and the support pin holder 560 simultaneously or separately, the substrate support pin 140 and the edge ring It is also possible to elevate 150.

Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Accordingly, the true scope of protection of the invention should be defined only by the appended claims.

1 is a configuration diagram of a multi-substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is an exploded perspective view illustrating a substrate support, an edge ring, and a substrate support pin in the multi-substrate processing apparatus shown in FIG. 1.

3 and 4 are diagrams for explaining an operation example of the multi-substrate processing apparatus shown in FIG.

5 is a configuration diagram of a multi-substrate processing apparatus according to a second embodiment of the present invention.

6 is a configuration diagram of a multi-substrate processing apparatus according to a third embodiment of the present invention.

7 is a configuration diagram of a multi-substrate processing apparatus according to a fourth embodiment of the present invention.

8 is a configuration diagram of a multi-substrate processing apparatus according to a fifth embodiment of the present invention.

<Brief description of the major symbols in the drawings>

110.Chamber 120.Gas injection

130. Board support 131. Board seat

140..board support pin 150 .. edge ring

Support pin holder 235..Gas outlet

370.Purge ring W..substrate

Claims (8)

A chamber having a reaction space therein; A substrate support rotatably installed in the chamber, the substrate support having substrate mounting parts on a top surface thereof, the substrate mounting parts being mounted on the upper surface of the chamber; Substrate support pins formed to support the substrates seated on the substrate seating portions from below, and each lower end of the substrate support pins protruding from the substrate supporter; An edge ring formed on each edge of the substrates seated on the substrate seating portions, and an edge ring formed at a lower end thereof to protrude through the substrate supporter; And The lower edge of the substrate support is formed to contact each lower end of the substrate support pins and the lower end of the edge ring, so that the edge ring with the substrate support pins close to the substrate seating portion when the substrate support is raised or lowered Or support pin holders spaced apart from each other. The method of claim 1, When the substrate support is raised, the edge ring together with the substrate support pins approaches the substrate seating portions by its own weight, and when the substrate support is lowered, the edge ring together with the substrate support pins is supported by the support pin holder. A plurality of substrate processing apparatus, characterized in that spaced apart from the substrate mounting portion. The method of claim 1, The edge ring is provided with a plurality of corresponding to each of the substrate seated on the substrate mounting portion, a plurality of substrate processing apparatus, characterized in that adjacent to or spaced apart from the substrate mounting portion independently from each other. The method of claim 1, And a length at which the edge ring protrudes below the substrate support is longer than a length at which the substrate support pin protrudes below the substrate support. 5. The method according to any one of claims 1 to 4, In the substrate support, a gas flow path is formed so that an inert gas having a pressure higher than the internal pressure of the chamber is supplied from the outside, and the inert gas supplied to the gas flow path is discharged to each edge of the substrates seated on the substrate mounting parts. The plurality of substrate processing apparatus, characterized in that the gas outlet is formed. The method of claim 5, The gas discharge port is a plurality of substrate processing apparatus further comprises a purge ring (purge ring) to adjust the gas flow. 5. The method according to any one of claims 1 to 4, The substrate support, the plurality of substrate processing apparatus, characterized in that the bypass is passed through so that the purge gas supplied into the chamber can pass by bypassing each edge of the substrate seated on the substrate seating portion. A chamber having a reaction space therein; A substrate support rotatably installed in the chamber, the substrate support having substrate mounting parts to allow a plurality of substrates to be seated along a circumference of a rotation center on an upper surface thereof; Substrate support pins formed to support the substrates seated on the substrate seating portions from below, and each lower end of the substrate support pins protruding from the substrate supporter; An edge ring formed on each edge of the substrates seated on the substrate seating portions, and an edge ring formed at a lower end thereof to protrude through the substrate supporter; And The lower edge of the substrate support is formed to be in contact with the lower end of each of the substrate support pins and the lower end of the edge ring, and can be lifted, so that the edge ring with the substrate support pins with respect to the substrate seating portion when raised or lowered Or a support pin holder configured to approach the plurality of substrates.

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