KR20110044030A - Display panel and display device including same - Google Patents

Abstract

According to an exemplary embodiment, a display device includes a lower display panel including a lower substrate and pixel transistors disposed on the lower substrate, a sensing transistor facing the lower display panel and positioned on the upper substrate and the upper substrate, and the sensing And an upper display panel including an overcoat covering the transistor, wherein the overcoat includes an upper display panel having unevenness at a position overlapping the sensing transistor. Accordingly, the display device according to an exemplary embodiment removes noise by diffusely reflecting infrared rays and visible rays directly incident on the sensing transistor in the backlight by forming irregularities at positions overlapping the sensing transistor in the overcoat covering the sensing transistor. can do.

Description

DISPLAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME}

The present invention relates to a display panel and a display device.

Currently, various types of flat panel displays have been developed and used. Among them, liquid crystal display devices are widely used for various applications.

Recently, liquid crystal display devices having a touch sensing function and an image sensing function have been actively studied. However, in the conventional liquid crystal display device, there is a problem in that high reliability cannot be obtained by implementing a touch sensing or image sensing function through physical changes.

As described above, the matters described in the "Background art" are intended to help the understanding of the background of the present invention, and the technology described in this part is not necessarily the prior art, and is not known in the art, such as the technology falling within the protection scope of the present invention. Can be.

The present invention provides a display panel and a display device that can implement a sensing function with high reliability.

According to an exemplary embodiment, a display device includes a lower display panel including a lower substrate and pixel transistors disposed on the lower substrate, a sensing transistor facing the lower display panel and positioned on the upper substrate and the upper substrate, and the sensing And an upper display panel including an overcoat covering the transistor, wherein the overcoat includes an upper display panel having unevenness at a position overlapping the sensing transistor.

The overcoat may be formed of an organic film, the overcoat may be formed of a color filter, and the overcoat may be formed of a light blocking member.

Preferably, a light blocking member is further formed between the sensing transistor and the overcoat, and the overcoat is formed of an organic film. In this case, the difference between the refractive index of the overcoat and the refractive index of the light blocking member is between 0.5 and 1.5, and the refractive index of the overcoat is preferably smaller than the refractive index of the light blocking member.

The overcoat is formed of a color filter. At this time, the difference between the refractive index of the overcoat and the refractive index of the light blocking member is between 0.5 to 1.5, the refractive index of the overcoat is preferably smaller than the refractive index of the light blocking member.

A color filter is further formed between the light blocking member and the overcoat. At this time, the difference between the refractive index of the overcoat and the refractive index of the color filter is between 0.5 to 1.5, the refractive index of the overcoat is preferably smaller than the refractive index of the color filter.

It is preferable that the said unevenness | corrugation is a lens shape.

The sensing transistor preferably includes an infrared sensing transistor and a visible light sensing transistor.

The infrared sensing transistor is disposed on the upper substrate and includes a first semiconductor layer including amorphous silicon germanium or amorphous germanium, a first source electrode and a first drain electrode on the first semiconductor layer, the first source electrode, and a first semiconductor layer. It is preferable to include a first gate electrode on the first drain electrode and overlapping with the first semiconductor layer.

The visible light sensing transistor is disposed on the upper substrate and includes a second semiconductor layer including amorphous silicon germanium or amorphous germanium, a second source electrode and a second drain electrode disposed on the second semiconductor layer, the second source electrode and It is preferable to include a second gate electrode on the second drain electrode and overlapping with the first semiconductor layer.

The display device may further include a readout transistor connected to the infrared sensing transistor and the visible light sensing transistor to transfer a detection signal.

The readout transistor is disposed on the third gate electrode on the upper substrate, on the third gate electrode, overlaps with the third gate electrode, and includes a third semiconductor layer including amorphous silicon, and positioned on the third semiconductor layer. It is preferable to include a third source electrode and a third drain electrode.

In addition, the display panel according to an exemplary embodiment may include a substrate, a sensing transistor positioned on the substrate, and a passivation layer positioned on the sensing transistor and having irregularities. Display panel.

The overcoat may be formed of an organic film, the overcoat may be formed of a color filter, and the overcoat may be formed of a light blocking member.

According to an exemplary embodiment of the present invention, irregularities are formed in a position overlapping the sensing transistor on the overcoat covering the sensing transistor, thereby making it possible to remove noise by diffusely reflecting infrared rays and visible light directly incident on the sensing transistor in the backlight.

Therefore, by removing the noise of the sensing transistor, the signal-to-noise ratio (SNR) may be improved to increase the sensing margin and improve the sensitivity.

Hereinafter, a display device will be described with reference to the accompanying drawings. I) The shapes, sizes, ratios, angles, numbers, operations, and the like shown in the accompanying drawings may be changed to be rough. ii) Since the drawings are shown with the eyes of the observer, the direction or position for describing the drawings may be variously changed according to the positions of the observers. iii) The same reference numerals may be used for the same parts even if the reference numbers are different. iv) When 'include', 'have', 'consist', etc. are used, other parts may be added unless 'only' is used. v) If described in the singular, the plural can also be interpreted. vi) Even if numerical values, shapes, sizes comparisons, positional relations, etc. are not described as 'about' or 'substantial', they are interpreted to include a normal error range. vii) The terms 'after', 'before', 'following', 'and', 'here', and 'following' are not used to limit the temporal position. viii) The terms 'first', 'second', etc. are merely used selectively, interchangeably or repeatedly, for convenience of distinction and are not to be interpreted in a limiting sense. ix) If the positional relationship between the two parts is described as 'up on', 'up on', 'under', 'under', 'to' and 'to side', etc. Unless is used, one or more other portions may be interposed between the two portions. x) When parts are connected with '~', they are interpreted to include not only parts but also combinations, but only when parts are connected with 'or'.

Next, a display device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 1 and 2. 1 and 2 illustrate a liquid crystal display, the display device according to the present embodiment may be applied to other types of display devices.

1 is a layout view of an upper panel of a display device according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view of II-II ′ and II ″ -II ′ ″ of FIG. 1.

As shown in FIGS. 1 and 2, the upper panel 200 includes an upper substrate 210 made of transparent glass or plastic and sensing transistors TrI and TrV. The sensing transistors TrI and TrV may include one or more infrared sensing transistors TrI and one or more visible light sensing transistors TrV. The infrared sensing transistor TrI and the visible light sensing transistor TrV may be uniformly distributed over the entire upper panel 200 to detect infrared rays and visible light in all portions of the upper panel 200. For example, the infrared sensing transistor TrI and the visible light sensing transistor TrV may be alternately arranged, may be arranged randomly, or may be arranged at a predetermined ratio. In this embodiment, the infrared sensing transistor TrI and the visible light sensing transistor TrV are alternately arranged.

In addition, the upper panel 200 may further include a readout transistor TrC connected to the infrared sensing transistor TrI and the visible light sensing transistor TrV to transfer a detection signal. The readout transistor TrC may be positioned adjacent to the same layer as the sensing transistors TrI and TrV.

The infrared sensing transistor TrI, the visible light sensing transistor TrV, and the readout transistor TrC may be positioned on the upper substrate 210.

More specifically, the infrared sensing transistor TrI includes the semiconductor layer 254I, the ohmic contacts 263I and 265I, the source electrode 273I, the drain electrode 275I, the gate insulating film 240, and the lower gate electrode 211I. And an upper gate electrode 224I.

The light blocking film 210I is positioned on the upper substrate 210, and the light blocking film 210I is positioned to overlap the semiconductor layer 254I. The light blocking film 210I prevents the semiconductor layer 254I from being exposed to visible light. Therefore, the light blocking film 210I may include a material capable of blocking visible light provided from the outside of the liquid crystal display. For example, the light blocking film 210I may include an organic material including black pigment or amorphous silicon.

The light blocking layer 210I blocks visible light incident from the outside to the liquid crystal display to improve a signal-to-noise ratio (SNR), and includes a semiconductor layer 254I including amorphous silicon germanium or amorphous germanium. By optimizing the sensitivity of the infrared region to effectively block the effects of visible light.

The lower gate electrode 211I is positioned on a portion of the light blocking film 210I. A blocking insulating layer 230 including an insulating material such as silicon nitride is formed on the upper substrate 210 to cover the lower gate electrode 211I. It is preferable that the thickness of the blocking insulating film 230 is 3000 kPa to 1000 kPa. When the thickness of the blocking insulating film 230 is less than 3000 GPa, the change in the infrared sensitivity due to the change of Vgs is large and the characteristic curve of the infrared sensing transistor is large due to accumulation of use time, and the thickness of the blocking insulating film 230 is 10000 GPa or more. The transistor cannot be miniaturized.

 The semiconductor layer 254I may be disposed on the blocking insulating layer 230 and formed of amorphous silicon germanium or amorphous germanium. When the semiconductor layer 254I is formed of amorphous silicon germanium or amorphous germanium, an infrared sensing transistor (TrI) having excellent infrared sensitivity may be formed. It is preferable that the thickness of the semiconductor layer 254I is 3000 kPa to 10000 kPa, and the infrared sensitivity is lowered at 3000 kPa or less, and the transistor cannot be miniaturized at 10000 kPa or more.

The ohmic contacts 263I and 265I may be positioned on the semiconductor layer 254I. The source electrode 273I may be positioned on the ohmic contact layer 263I. The drain electrode 275I may be disposed apart from the source electrode 273I on the ohmic contact layer 265I.

The gate insulating film 240 covers the semiconductor layer 254I, the source electrode 273I, and the drain electrode 275I. A contact hole 225I is formed in the gate insulating layer 240 to connect the lower gate electrode 211I to the upper gate electrode 224I, and the drain electrode 275I is connected to the battery data line 227. The contact hole 228 is formed. A portion of the source electrode 273I and a portion of the battery data line 227 overlap each other to form an infrared sensing capacitor Ci, and infrared rays can be detected by changing the capacitance of the infrared sensing capacitor Ci. have. It is preferable that the thickness of the gate insulating film 240 is 3000 kPa to 10000 kPa. If the thickness of the gate insulating film 240 is less than or equal to 3000 kPa, the infrared sensitivity is lowered.

The upper gate electrode 224I may be positioned to overlap the semiconductor layer 254I on the gate insulating layer 140, and is connected to the lower gate electrode 211I through the contact hole 224I.

Since the light blocking film 210I is in contact with the lower gate electrode 211I connected to the upper gate electrode 224I, an operation error of the transistor by the light blocking film 210I can be prevented. That is, when the light blocking film 210I formed of amorphous silicon or the like is separated, the light blocking film 210I may generate external charge by absorbing external light, which may affect the operation of the transistor. Therefore, in order to prevent this, the light blocking film 210I is connected to the upper gate electrode 224I through the lower gate electrode 211I, so that a gate voltage having a predetermined size is applied to the light blocking film 201I. The operation error of the transistor can be prevented.

  A passivation layer 280 may be formed on the upper gate electrode 224I to protect the gate electrode 224I.

The readout transistor TrC may transfer an input signal to the source electrode 273C connected to the readout line 226, and may be connected to the source electrode 273I of the infrared sensing transistor TrI through the drain electrode 275C. .

The lead-out transistor TrC includes the semiconductor layer 254C, the ohmic contact layers 263C and 265C, the source electrode 273C, the drain electrode 275C, the gate insulating film 240, the lower gate electrode 211C, and the upper gate electrode. 224C.

The lower gate electrode 211C is positioned on the upper substrate 210, and the lower gate electrode 211C is positioned to overlap the semiconductor layer 254C. A blocking insulating layer 230 including an insulating material such as silicon nitride is formed on the upper substrate 210 to cover the lower gate electrode 211C.

The semiconductor layer 254C may be disposed on the blocking insulating layer 230 and formed of amorphous silicon. It is preferable that the thickness of the semiconductor layer 254C is 500 kV to 3000 kV. If the thickness of the semiconductor layer 254C is 500 kV or less, it is difficult to form a channel uniformly.

The ohmic contacts 263C and 265C may be positioned on the semiconductor layer 254C. The source electrode 273C may be positioned over the ohmic contact layer 263C. The drain electrode 275C may be positioned apart from the source electrode 273C on the ohmic contact layer 265C.

The gate insulating layer 240 may be positioned on the semiconductor layer 254C, the source electrode 273C, and the drain electrode 275C. A contact hole 225C for connecting the lower gate electrode 211C to the upper gate electrode 224C is formed in the gate insulating layer 240.

The upper gate electrode 224C may be positioned to overlap the semiconductor layer 254C on the gate insulating layer 140, and is connected to the lower gate electrode 211C through the contact hole 224C. The upper gate electrode 224C prevents the semiconductor layer 254C from being exposed to visible light.

A passivation layer 280 may be formed on the upper gate electrode 224C to protect the upper gate electrode 224C.

On the other hand, a visible light sensing transistor TrV is disposed on the upper substrate 210 and a readout transistor TrC electrically connected to the visible light sensing transistor TrV on the same layer as the visible light sensing transistor TrV. Is located.

More specifically, the visible light sensing transistor TrV includes the semiconductor layer 254V, the ohmic contact layers 263V and 265V, the source electrode 273V, the drain electrode 275V, the gate insulating layer 240, and the gate electrode 224V. It may include.

A blocking insulating layer 230 including an insulating material such as silicon nitride is formed on the upper substrate 210, and a semiconductor layer 254V formed of amorphous silicon is disposed on the blocking insulating layer 230. It is preferable that the thickness of the semiconductor layer 254V is 500 kV to 3000 kV. If the thickness of the semiconductor layer 254V is 500 kV or less, it is difficult to form a channel uniformly.

The ohmic contacts 263V and 265V may be positioned on the semiconductor layer 254V. The source electrode 273V may be positioned on the ohmic contact layer 263V. The drain electrode 275V may be positioned apart from the source electrode 273V on the ohmic contact layer 265V.

The gate insulating film 240 covers the semiconductor layer 254V, the source electrode 273V, and the drain electrode 275V. In the gate insulating layer 240, a contact hole 228 is formed to connect the drain electrode 275V to the battery data line 227. A part of the source electrode 273V and a part of the battery data line 227 overlap to form a visible light sensing capacitor Cv, and the visible light is changed through the change of capacitance of the visible light sensing capacitor Cv. It can be detected.

The gate electrode 224V may be positioned on the gate insulating layer 240 to overlap the semiconductor layer 254V. A passivation layer 280 may be formed on the gate electrode 224V to protect the gate electrode 224V.

The readout transistor TrC transmits an input signal to the source electrode 273C connected to the leadout line 226, and may be connected to the source electrode 273V of the visible light sensing transistor TrV through the drain electrode 275C. have.

A light blocking member 310 may be formed on the passivation layer 280 covering the infrared sensing transistor TrI, the visible light sensing transistor TrV, and the readout transistor TrC. The light blocking member 310 prevents the infrared light and the visible light generated from the backlight unit 910 from entering the infrared sensing transistor TrI and the visible light sensing transistor TrV.

An overcoat 320 is formed on the light blocking member 310. The overcoat 320 may be formed of an organic film. The light blocking member 310 prevents the infrared and visible light generated from the backlight unit 910 from being incident on the infrared sensing transistor TrI and the visible light sensing transistor TrV, but partially transmits the infrared light. The infrared rays may be transmitted until the thickness of the light blocking member 310 is 3 μm.

Therefore, in order to prevent this, the overcoat 320 forms the unevenness 321 at a position overlapping the infrared sensing transistor TrI and the visible light sensing transistor TrV. The unevenness 321 may be formed using a half tone mask, and it is preferable to form the lens.

The unevenness 321 diffuses the infrared and visible light directly incident from the backlight unit 910 to the infrared sensing transistor TrI and the visible light sensing transistor TrV, so that the infrared and visible light are irradiated with the infrared sensing transistor TrI and the visible light. Direct entry to the sense transistor TrV is completely blocked. Therefore, it is possible to remove the noise generated by the infrared and visible light incident on the infrared sensing transistor (TrI) and the visible light sensing transistor (TrV), thereby reducing the signal-to-noise ratio (SNR). Enhancements can increase sensing margins and improve infrared sensitivity.

In addition, the difference in the refractive index of the light blocking member 310 and the overcoat 320 is increased to reduce the transmittance of infrared and visible light at the interface between the light blocking member 310 and the overcoat 320 and reflectance of the infrared and visible light. Can be increased. To this end, the difference between the refractive index of the overcoat 320 and the refractive index of the light blocking member 310 is preferably between 0.5 and 1.5, and the refractive index of the overcoat 320 should be smaller than the refractive index of the light blocking member 310. When the difference between the refractive index of the overcoat 320 and the refractive index of the light blocking member 310 is less than 0.5, the amount of reflection of infrared and visible light does not increase, and the refractive index of the overcoat 320 and the refractive index of the light blocking member 310 do not increase. If the difference is greater than 1.5, the amount of reflection of the infrared light and the visible light is too large to affect the pixel transistor TrP of the lower panel 100, thereby degrading the performance of the pixel transistor.

In the above embodiment, the sensing margin is improved by forming the overcoat 320 having the unevenness 231 on the light blocking member 310, but the sensing margin may be improved by forming the unevenness in the light blocking member 310 itself.

A common electrode (not shown) made of ITO or IZO is formed on the overcoat 320.

3 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

As shown in FIG. 3, the display device includes a lower panel 100 and an upper panel 200 facing each other, and a liquid crystal layer 3 interposed between the two display panels 100 and 200.

The liquid crystal layer 3 has negative dielectric anisotropy, and the liquid crystal molecules of the liquid crystal layer 3 may be aligned such that their major axes are substantially perpendicular to the surfaces of the two display panels 100 and 200 in the absence of an electric field.

Alignment layers (not shown) may be formed on inner surfaces of the display panels 100 and 200, and they may be vertical alignment layers.

The display device may further include a lower polarizer 12 positioned below the lower panel 100 and an upper polarizer 22 positioned on the upper panel 200. The intensity of light provided to the lower panel 100 and the upper panel 200 may be adjusted by using polarization properties of the lower polarizer 12 and the upper polarizer 22.

The display device may further include a backlight unit 910 positioned below the lower panel 100. The backlight unit 910 may include at least one infrared light emitter 920 and at least one visible light emitter 930. The infrared light emitter 920 and the visible light emitter 930 may be point light sources such as a light emitting device (LED). In addition, the infrared light and the visible light emitted from the infrared light emitter 920 and the visible light emitter 930 may be incident to the lower panel 100 substantially perpendicularly.

The infrared light emitter 920 and the visible light emitter 930 may be uniformly distributed throughout the backlight unit 910 so that infrared and visible light may be provided in all parts of the backlight unit 910. For example, the infrared light emitter 920 and the visible light emitter 930 may be alternately arranged, may be arranged randomly, and may be arranged at a predetermined ratio.

The lower panel 100 includes a lower substrate 110 made of transparent glass or plastic and a pixel transistor TrP formed on the lower substrate 110. The pixel transistor TrP includes a gate electrode 124p formed on the lower substrate 110, a gate insulating layer 140 covering the lower substrate 110 and the gate electrode 124p, and a gate electrode 124p on the gate insulating layer 140. ) Overlapping the semiconductor layer 154p, the ohmic contact layers 163p and 165p disposed on the semiconductor layer 154p, the source electrode 173p and the ohmic contact layer 165p disposed on the ohmic contact layer 163p. The drain electrode 175p may be disposed above the source electrode 173p.

The lower panel 100 may further include a gate line positioned on the lower substrate 110 and a data line crossing the gate line. The gate line may be connected to the gate electrode 124p of the pixel transistor TrP. The data line may be connected to the source electrode 173p of the pixel transistor TrP.

The lower panel 100 includes a passivation layer 180 covering the pixel transistor TrP, a color filter 23 disposed on the passivation layer 180, an overcoat 25 and an overcoat 25 disposed on the color filter 23. ) May further include a pixel electrode 190 positioned on the upper surface of the pixel electrode. The pixel electrode 190 may pass through the overcoat 25 and the passivation layer 180 to be connected to the drain electrode 175p of the pixel transistor TrP.

4 is a diagram for describing a method of sensing an object using the display device of FIG. 3.

As shown in FIG. 4, the backlight unit 910 generates infrared and visible light. Infrared light passes through the lower polarizer 12, the lower panel 100, the liquid crystal layer 3, the upper panel 200, and the upper polarizer 22 sequentially.

The visible light sequentially passes through the lower polarizer 12, the lower panel 100, the liquid crystal layer 3, the upper panel 200, and the upper polarizer 22. In this case, the color filter 23 of the lower panel 100 may be changed into visible light having various colors.

Infrared rays provided from the backlight unit 910 may be used for touch sensing of the first object T ₁ positioned on the liquid crystal display. When the first object T ₁ is adjacent to the liquid crystal display, the infrared rays emitted from the liquid crystal display are reflected by the first object T ₁ . The reflected infrared rays are incident to and detected by the infrared sensing transistor TrI positioned on the upper panel 200. Therefore, the first object consists of a touch sensor for (T ₁₎ the contact information for the contact status, the contact position, shape and size of the first object (T ₁₎ can be obtained.

When the gradation of the visible light emitted from the liquid crystal display is brighter than the gradation of the visible light incident on the liquid crystal display from the outside, the visible light emitted from the liquid crystal display when sensing the image of the second object T ₂ adjacent to the liquid crystal display Rays can be used. In detail, the visible light emitted from the liquid crystal display is reflected by the second object T ₂ . The reflected visible light is incident to and detected by the visible light sensing transistor TrV positioned on the upper panel 200. Therefore, a second object such as image sensing made for the (T _2), the image information about the second shape of the object (T _2), size, color scheme can be obtained.

Then through the touch sensing confirmation of the contacts of the second object (T _2), and the gray level of visible light emitted from the liquid crystal display device toward the contact portion selectively changing the image sensing of the second water body (T ₂₎ You can do it more effectively. For example, when the gray level of the visible light emitted from the liquid crystal display is darker than the gray level of the visible light incident from the outside, the touch sensing using infrared rays is first performed. An effective image sensing of the second object T ₂ may be performed by selectively brightening the gray level of the visible light emitted from the liquid crystal display toward the contact portion of the second object T ₂ identified by touch sensing.

5 is a cross-sectional view of an upper panel of a display device according to another exemplary embodiment.

FIG. 5 is substantially the same as only forming a color filter on the light blocking member and forming irregularities on the surface of the color filter compared to the embodiment shown in FIG.

The color filter 23 is formed on the light blocking member 310. In this case, since a separate color filter 23 is not formed on the lower panel 100, the manufacturing process is simplified. The light blocking member 310 prevents the infrared and visible light generated from the backlight unit 910 from being incident on the infrared sensing transistor TrI and the visible light sensing transistor TrV, but partially transmits the infrared light. Therefore, in order to prevent this, the color filter 23 forms the unevenness 321 at a position overlapping the infrared sensing transistor TrI and the visible light sensing transistor TrV. The unevenness 231 may be formed using a half tone mask, and it is preferable that the unevenness 231 is formed in a lens shape.

The unevenness 231 diffusely reflects infrared rays and visible light directly incident from the backlight unit 910 to the infrared sensing transistor TrI and the visible light sensing transistor TrV so that the infrared rays and visible light are irradiated with the infrared sensing transistor TrI and the visible light. Direct entry to the sense transistor TrV is completely blocked. Therefore, it is possible to remove the noise generated by the infrared and visible light incident on the infrared sensing transistor (TrI) and the visible light sensing transistor (TrV), thereby improving the signal-to-noise ratio (SNR) to improve the detection margin. Increase and improve infrared sensitivity.

In addition, the difference in refractive index between the light blocking member 310 and the color filter 23 is increased to reduce the transmittance of infrared and visible light at the interface between the light blocking member 310 and the color filter 23, and the reflectance of the infrared and visible light. Can be increased. For this purpose, the difference between the refractive index of the color filter 23 and the refractive index of the light blocking member 310 is preferably between 0.5 and 1.5, and the refractive index of the color filter 23 should be smaller than the refractive index of the light blocking member 310. When the difference between the refractive index of the color filter 23 and the refractive index of the light blocking member 310 is less than 0.5, the amount of reflection of infrared rays and visible light does not increase, but the refractive index of the color filter 23 and the refractive index of the light blocking member 310 do not increase. If the difference is greater than 1.5, the amount of reflection of the infrared light and the visible light is too large to affect the pixel transistor TrP of the lower panel 100, thereby degrading the performance of the pixel transistor.

6 is a cross-sectional view of an upper panel of a display device according to still another embodiment of the present invention.

6 is substantially the same as that of the embodiment shown in FIG. 2 except that a color filter is formed between the overcoat and the light blocking member, and thus repeated description thereof will be omitted.

The color filter 23 is formed on the light blocking member 310, and the overcoat 320 is formed on the color filter 23. The overcoat 320 may be formed of an organic film. The light blocking member 310 prevents the infrared and visible light generated from the backlight unit 910 from being incident on the infrared sensing transistor TrI and the visible light sensing transistor TrV, but partially transmits the infrared light. Therefore, in order to prevent this, the overcoat 320 forms the unevenness 321 at a position overlapping the infrared sensing transistor TrI and the visible light sensing transistor TrV. The unevenness 321 may be formed using a half tone mask, and it is preferable to form the lens.

The unevenness 321 diffuses the infrared and visible light directly incident from the backlight unit 910 to the infrared sensing transistor TrI and the visible light sensing transistor TrV, so that the infrared and visible light are irradiated with the infrared sensing transistor TrI and the visible light. Direct entry to the sense transistor TrV is completely blocked. Therefore, it is possible to remove the noise generated by the infrared and visible light incident on the infrared sensing transistor (TrI) and the visible light sensing transistor (TrV), thereby reducing the signal-to-noise ratio (SNR). Enhancements can increase sensing margins and improve infrared sensitivity.

In addition, the difference in the refractive index of the color filter 23 and the overcoat 320 is increased to reduce the transmittance of infrared and visible light at the interface between the color filter 23 and the overcoat 320 and to reflect the infrared and visible light. Can be increased. To this end, the difference between the refractive index of the overcoat 320 and the refractive index of the color filter 23 is preferably between 0.5 and 1.5, and the refractive index of the overcoat 320 should be smaller than the refractive index of the color filter 23. If the difference between the refractive index of the overcoat 320 and the refractive index of the color filter 23 is less than 0.5, the amount of reflection of the infrared and visible light does not increase, and the refractive index of the overcoat 320 and the refractive index of the color filter 23 do not increase. If the difference is greater than 1.5, the amount of reflection of the infrared light and the visible light is too large to affect the pixel transistor TrP of the lower panel 100, thereby degrading the performance of the pixel transistor.

As mentioned above, although embodiments of the present invention have been described, the examples are merely examples for describing the protection scope of the present invention described in the claims and do not limit the protection scope of the present invention. In addition, the protection scope of the present invention can be extended to the technically equivalent range of the claims.

1 is a layout view of an upper panel of a display device according to an exemplary embodiment.

FIG. 2 is a cross-sectional view of II-II ′ and II ″ -II ′ ″ of FIG. 1;

3 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

4 is a diagram for describing a method of sensing an object using the display device of FIG. 3.

5 is a cross-sectional view of an upper panel of a display device according to another exemplary embodiment.

6 is a cross-sectional view of an upper panel of a display device according to still another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

3: liquid crystal layer 12: lower polarizer

22: upper polarizer 23: color filter

100: lower display panel 110: lower substrate
200: upper display panel 210: upper substrate
210I: light blocking film 224V, 224I, 224C: upper gate electrode
240: gate insulating film 254V, 254I, 254C: semiconductor layer
263V, 265V, 263I, 265I, 263C, 265C: Resistive Contact Layer

273V, 273I, 273C: source electrode 275V, 275I, 275C: drain electrode

280: protective film 310: light blocking member

320: overcoat 321: irregularities

910: backlight unit 920: infrared light emitter
930: visible light emitter

Claims (24)

A lower panel including a lower substrate and a pixel transistor positioned on the lower substrate; An upper display panel facing the lower display panel, the upper display panel including an upper substrate, a sensing transistor positioned on the upper substrate, and an overcoat covering the sensing transistor, wherein the overcoat has an unevenness at a position overlapping the sensing transistor; Display device including a display panel. In claim 1, The overcoat is formed of an organic film. In claim 1, And the overcoat is formed of a color filter. In claim 1, The overcoat is formed of a light blocking member. In claim 1, And a light blocking member further formed between the sensing transistor and the overcoat. The method of claim 5, The overcoat is formed of an organic film. In claim 6, And a difference between the refractive index of the overcoat and the refractive index of the light blocking member is between 0.5 and 1.5. 8. The method of claim 7, The refractive index of the overcoat is smaller than the refractive index of the light blocking member. The method of claim 5, And the overcoat is formed of a color filter. The method of claim 9, And a difference between the refractive index of the overcoat and the refractive index of the light blocking member is between 0.5 and 1.5. In claim 10, The refractive index of the overcoat is smaller than the refractive index of the light blocking member. The method of claim 5, And a color filter further formed between the light blocking member and the overcoat. The method of claim 12, And a difference between the refractive index of the overcoat and the refractive index of the color filter is between 0.5 and 1.5. The method of claim 13, The refractive index of the overcoat is smaller than the refractive index of the color filter. In claim 1, The irregularities have a lens shape. In claim 1, The sensing transistor includes an infrared sensing transistor and a visible light sensing transistor. The method of claim 16, The infrared sensing transistor is disposed on the upper substrate and includes a first semiconductor layer including amorphous silicon germanium or amorphous germanium, a first source electrode and a first drain electrode on the first semiconductor layer, the first source electrode, and a first semiconductor layer. And a first gate electrode on the first drain electrode and overlapping the first semiconductor layer. The method of claim 16, The visible light sensing transistor is disposed on the upper substrate and includes a second semiconductor layer including amorphous silicon germanium or amorphous germanium, a second source electrode and a second drain electrode disposed on the second semiconductor layer, the second source electrode and And a second gate electrode disposed on the second drain electrode and overlapping the first semiconductor layer. The method of claim 16, And a readout transistor connected to the infrared sensing transistor and the visible light sensing transistor to transfer a detection signal. The method of claim 19, The readout transistor may include a third gate electrode positioned on the upper substrate, a third semiconductor layer disposed on the third gate electrode, overlapping the third gate electrode, and including amorphous silicon, and on the third semiconductor layer. A display device comprising a third source electrode and a third drain electrode positioned. Board, A sensing transistor located on the substrate, And a passivation layer on the sensing transistor and having irregularities. The method of claim 21, The overcoat is formed of an organic film. The method of claim 21, The overcoat is formed of a color filter. The method of claim 21, The overcoat is formed of a light blocking member.

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