KR20130023668A - Light emitting device, light emitting device package, and light unit - Google Patents

Abstract

The light emitting device according to the embodiment, the growth substrate; A plurality of light emitting cells disposed on the growth substrate; A semiconductor light extracting unit disposed between the plurality of light emitting cells; It includes.

Description

LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT}

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.

As the light efficiency of light emitting devices increases, light emitting devices have been applied to various fields including display devices and lighting devices.

The embodiment provides a light emitting device, a light emitting device package, and a light unit including a plurality of light emitting cells with improved light extraction efficiency and electrically connected in series.

The light emitting device according to the embodiment, the growth substrate; A plurality of light emitting cells disposed on the growth substrate; A semiconductor light extracting unit disposed between the plurality of light emitting cells; It includes.

The light emitting device package according to the embodiment includes a body; A light emitting element disposed on the body; A first lead electrode and a second lead electrode electrically connected to the light emitting device; The light emitting device includes a growth substrate; A plurality of light emitting cells disposed on the growth substrate; A semiconductor light extracting unit disposed between the plurality of light emitting cells; It includes.

According to an embodiment, a light unit includes a substrate; A light emitting device disposed on the substrate; An optical member through which light provided from the light emitting device passes; The light emitting device includes a growth substrate; A plurality of light emitting cells disposed on the growth substrate; A semiconductor light extracting unit disposed between the plurality of light emitting cells; It includes.

The light emitting device, the light emitting device package, and the light unit according to the embodiment may provide a plurality of light emitting cells with improved light extraction efficiency and electrically connected in series.

1 is a plan view conceptually illustrating a light emitting device according to an embodiment.
FIG. 2 is a cross-sectional view illustrating region A of FIG. 1.
FIG. 3 is an enlarged view of region B of FIG. 1.
4 is a cross-sectional view taken along line II ′ of FIG. 3.
5 to 7 are diagrams showing modified examples of the light emitting device according to the embodiment.
8 is a view showing a light emitting device package according to the embodiment.
9 is a diagram illustrating a display device according to an exemplary embodiment.
10 is a diagram illustrating another example of a display device according to an exemplary embodiment.
11 is a view showing a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, and a light unit according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a plan view conceptually illustrating a light emitting device according to an embodiment, FIG. 2 is a cross-sectional view illustrating region A of FIG. 1, and FIG. 3 is an enlarged view of region B of FIG. 1.

The light emitting device according to the embodiment may include a plurality of light emitting cells. 1 shows light emitting devices including light emitting cells A1 to A5, B1 to B5, and C1 to C5, the number of light emitting cells included in the light emitting devices may be further reduced or further increased. In the light emitting device according to the embodiment, for example, an N electrode may be disposed in the A1 light emitting cell, and for example, a P electrode may be disposed in the C5 light emitting cell. For example, the light emitting cells of A1, A2, A3, A4, A5, B1, B2, B3, B4, B5, C1, C2, C3, C4 and C5 may be electrically connected in series. A first connection line L1 may be provided between the A1 light emitting cell and the A2 light emitting cell for electrical connection. In addition, a second connection line L2 may be provided for electrical connection between the A2 light emitting cell and the A3 light emitting cell. In this way, the A1 light emitting cells can be electrically connected to the C5 light emitting cells.

An electrical connection between light emitting cells in the light emitting device according to the embodiment will be described with reference to FIG. 2.

The light emitting device according to the embodiment may include a C4 light emitting cell and a C5 light emitting cell on the growth substrate 5. The C4 light emitting cell may include the first light emitting structure 10, and the C5 light emitting cell may include the second light emitting structure 20. For example, the growth substrate 5 may use at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, and Ge. For example, the first light emitting structure 10 and the second light emitting structure 20 may be grown together on the growth substrate 5.

The first light emitting structure 10 may include a first semiconductor layer 11 of a first conductivity type, a first active layer 12, and a second semiconductor layer 13 of a second conductivity type. The first active layer 12 may be disposed between the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type. The first active layer 12 may be disposed on the first semiconductor layer 11 of the first conductivity type, and the second semiconductor layer 13 of the second conductivity type may be disposed on the first active layer 12. Can be.

For example, the first semiconductor layer 11 of the first conductivity type is formed of an n-type semiconductor layer to which an n-type dopant is added as the first conductivity type dopant, and the second semiconductor layer 13 of the second conductivity type. The second conductive dopant may be formed of a p-type semiconductor layer to which a p-type dopant is added. Further, the first semiconductor layer 11 of the first conductivity type may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may be formed of an n-type semiconductor layer.

The first semiconductor layer 11 of the first conductivity type may include, for example, an n-type semiconductor layer. A first semiconductor layer (11) of the first conductivity type having the compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with a semiconductor material. The first semiconductor layer 11 of the first conductivity type may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. N-type dopants such as Sn, Se, Te, and the like may be doped.

The first active layer 12 is electrons (or holes) injected through the first semiconductor layer 11 of the first conductivity type and holes injected through the second semiconductor layer 13 of the second conductivity type ( Or electrons) meet each other and emit light due to a band gap difference of an energy band according to a material of forming the first active layer 12. The first active layer 12 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

The first active layer 12 is implemented as an example of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be. When the first active layer 12 is implemented as the multi quantum well structure, the first active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer. It can be implemented in the cycle of the / GaN barrier layer.

The second semiconductor layer 13 of the second conductivity type may be implemented with, for example, a p-type semiconductor layer. A second semiconductor layer (13) of the second conductivity type having the compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be implemented with a semiconductor material. The second conductive second semiconductor layer 13 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. P-type dopants such as, Ca, Sr, and Ba may be doped.

The first semiconductor layer 11 of the first conductivity type may include a p-type semiconductor layer, and the second semiconductor layer 13 of the second conductivity type may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further disposed on the second conductive layer 13 of the second conductivity type. Accordingly, the first light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first semiconductor layer 11 of the first conductivity type and the second semiconductor layer 13 of the second conductivity type may be provided uniformly or non-uniformly. That is, the structure of the first light emitting structure 10 may be variously formed, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be provided between the first conductivity type first semiconductor layer 11 and the first active layer 12. The AlGaN layer of the second conductivity type may be disposed between the second semiconductor layer 13 of the second conductivity type and the first active layer 12. A buffer layer may be further provided between the first semiconductor layer 11 of the first conductivity type and the growth substrate 5. For example, an undoped GaN layer may be applied to the buffer layer.

The second light emitting structure 20 may include a third semiconductor layer 21 of a first conductivity type, a second active layer 22, and a fourth semiconductor layer 23 of a second conductivity type. The second active layer 22 may be disposed between the third semiconductor layer 21 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type. The second active layer 22 may be disposed on the third semiconductor layer 21 of the first conductivity type, and the fourth semiconductor layer 23 of the second conductivity type may be disposed on the second active layer 22. Can be. The second light emitting structure 20 may be similarly formed in accordance with the first light emitting structure 10 described above.

The first transparent electrode 15 may be disposed on the first light emitting structure 10, and the second transparent electrode 25 may be disposed on the second light emitting structure 20. In addition, a first electrode 19 may be disposed on the first transparent electrode 15, and a second electrode 29 may be disposed on the second transparent electrode 25. The second electrode 29 may be electrically connected to the first semiconductor layer 11 of the first conductivity type and the fourth semiconductor layer 23 of the second conductivity type. For example, the second electrode 29 may be in contact with the first semiconductor layer 11 of the first conductivity type. In addition, a separate metal layer may be disposed between the first semiconductor layer 11 of the first conductivity type and the second electrode 29. The first passivation layer 27 may be disposed between the second light emitting structure 20 and the second electrode 29. Accordingly, the second electrode 29 and the second active layer 22 may be electrically insulated. In addition, the second electrode 29 and the third semiconductor layer 21 of the first conductivity type may be electrically insulated.

The first transparent electrode 15 and the second transparent electrode 25 may be formed of, for example, a transparent conductive oxide layer. The first transparent electrode 15 and the second transparent electrode 25 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), or IZTO. (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride) , ZnO, IrOx, RuOx, NiO, Pt, Ag may be formed of at least one material selected from.

The first electrode 19 and the second electrode 29 are, for example, at least of Cr, Ti, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, Hf, V It may be formed of a metal or alloy containing one. In addition, the first electrode 19 and the second electrode 29 may be formed of the metal or alloy, indium tin oxide (ITO), indium zinc oxide (IZO), and indium zinc zinc tin (IZTO). ), IAZO (Indium-Aluminum-Zinc-Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-) It may be formed in a multi-layer using a transparent conductive material such as oxide. For example, in the embodiment, the first electrode 19 and the second electrode 29 include at least one of Ag, Al, Ag-Pd-Cu alloy, Ag-Cu alloy, IrOx, RuOx, NiO. can do.

According to an embodiment, the first electrode 19 and the second electrode 29 may be implemented in a multilayer structure. The first electrode 19 and the second electrode 29 may be implemented as an ohmic contact layer, an intermediate layer, and an upper layer. The ohmic contact layer may implement an ohmic contact by including a material selected from Cr, V, W, Ti, and Zn. The intermediate layer may be formed of a material selected from Ni, Cu, Al, and the like. The upper layer may comprise, for example, Au.

The first passivation layer 27 is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , TiOx, AlN and may be formed of a material having a light transmissive and insulating property.

3 and 4, the light emitting device according to the embodiment may include a semiconductor light extracting unit 51 disposed between the plurality of light emitting cells. The semiconductor light extracting unit 51 may include a semiconductor material constituting the plurality of light emitting cells.

The light emitting cell A3 may include the third light emitting structure 30. The third light emitting structure 30 may include a fifth semiconductor layer 31 of a first conductivity type, a third active layer 32, and a sixth semiconductor layer 33 of a second conductivity type. The third active layer 32 may be disposed between the fifth semiconductor layer 31 of the first conductivity type and the sixth semiconductor layer 33 of the second conductivity type. The third active layer 32 may be disposed on the fifth semiconductor layer 31 of the first conductivity type, and the sixth semiconductor layer 33 of the second conductivity type may be disposed on the third active layer 32. Can be. The third light emitting structure 30 may be similarly provided based on the first light emitting structure 10. A third transparent electrode 35 may be disposed on the third light emitting structure 30.

The light emitting cell B3 may include the fourth light emitting structure 40. The fourth light emitting structure 40 may include a seventh semiconductor layer 41 of a first conductivity type, a fourth active layer 42, and an eighth semiconductor layer 43 of a second conductivity type. The fourth active layer 42 may be disposed between the seventh semiconductor layer 41 of the first conductivity type and the eighth semiconductor layer 43 of the second conductivity type. The fourth active layer 42 may be disposed on the seventh semiconductor layer 41 of the first conductivity type, and the eighth semiconductor layer 43 of the second conductivity type may be disposed on the fourth active layer 42. Can be. The fourth light emitting structure 40 may be similarly provided based on the first light emitting structure 10. A fourth transparent electrode 45 may be disposed on the fourth light emitting structure 40.

The semiconductor light extracting unit 51 may be provided with the same composition as the third light emitting structure 30 or the fourth light emitting structure 40. The semiconductor light extracting unit 51 may be formed together during the isolation etching of the third light emitting structure 30 and the fourth light emitting structure 40. The semiconductor light extracting unit 51 may be provided at the same height as the sixth semiconductor layer 33 of the second conductivity type. In addition, the semiconductor light extracting unit 51 may be provided at a lower height than the sixth semiconductor layer 33 of the second conductivity type. The semiconductor light extracting unit 51 may be provided in contact with the growth substrate 5. The semiconductor light extracting unit 51 may be spaced apart from the third light emitting structure 30 and the fourth light emitting structure 40. The semiconductor light extracting unit 51 may be implemented in various ways such as a horn shape, a cylinder shape, a polygonal pillar shape, and a cone shape. In addition, the semiconductor light extracting unit 51 may be implemented in a random shape.

According to the light emitting device according to the embodiment, the light extraction effect extracted to the outside by the semiconductor light extracting unit 51 may be improved. That is, the light emitted from the third active layer 32 and the fourth active layer 42 is refracted and reflected by the semiconductor light extracting unit 51, thereby improving the external light extraction effect. In this case, the semiconductor light extracting unit 51 is provided in accordance with the height of the third light emitting structure 30 or the fourth light emitting structure 40, thereby the light extracted to the outside by the semiconductor light extraction unit 51. The extraction effect can be greatly improved.

In the light emitting device according to the embodiment, since power is supplied to the N electrode and the P electrode illustrated in FIG. 1, light may be provided from a plurality of light emitting cells electrically connected in series. In addition, the semiconductor light extracting unit 51 disposed between the plurality of light emitting cells can improve the external light extraction effect.

A protective layer may be further disposed on the first light emitting structure 10, the second light emitting structure 20, the third light emitting structure 30, and the fourth light emitting structure 40. The protective layer may be formed of an oxide or a nitride. The protective layer is, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of a material having a light transmitting and insulating properties. The passivation layer may be provided around the first light emitting structure 10, the second light emitting structure 20, the third light emitting structure 30, and the fourth light emitting structure 40.

5 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 5, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

In the light emitting device according to the embodiment, the first pattern 7 may be provided on the growth substrate 5. The first pattern 7 may be formed on the growth substrate 5. The first pattern 7 may be provided under the third light emitting structure 30 and the fourth light emitting structure 40. The first pattern 7 may improve the growth quality of the third light emitting structure 30 and the fourth light emitting structure 40. In addition, the light emitted from the third light emitting structure 30 and the fourth light emitting structure 40 may be better extracted to the outside by the first pattern 7. The first pattern 7 may also be provided under the semiconductor light extracting portion 51. The semiconductor light extracting unit 51 may be grown on the first pattern 7, and the shape of the semiconductor light extracting unit 51 may be determined by an etching process.

6 is a view showing another example of the light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 6, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

The light emitting device according to the embodiment may include a transmission layer 61 on the semiconductor light extraction unit 51. The refractive index of the transmission layer 61 may be implemented to have a smaller value than the refractive index of the semiconductor light extraction unit 51. The transmission layer 61 may be implemented to have a refractive index of 1.0 to 2.4. Accordingly, the light extraction effect of light extracted to the outside through the semiconductor light extraction unit 51 and the transmission layer 61 can be improved. The transmission layer 61 may be formed of, for example, a light transmissive material. For example, the transmission layer 61 may be formed of a material such as silicon, SiO ₂ , SiOx, SiNx, TiOx, or the like. The transmission layer 61 may also be provided on the third light emitting structure 30 and the fourth light emitting structure 40.

7 is a view showing another example of a light emitting device according to the embodiment. In the description of the light emitting device according to the exemplary embodiment illustrated in FIG. 7, the description of parts overlapping with those described with reference to FIG. 1 will be omitted.

The light emitting device according to the embodiment may adjust the height of the semiconductor light extraction unit 51 in various ways. For example, the height of the semiconductor light extracting unit 51 may be lower than the height of the upper surface of the third light emitting structure 30 or the fourth light emitting structure 40. The height of the semiconductor light extracting unit 51 may be implemented based on the height of the seventh semiconductor layer 41 of the first conductivity type. In this case, the semiconductor light extracting unit 51 may not include an active layer, and may prevent light emitted from the third active layer 32 and the fourth active layer 42 from being trapped in the active layer. have. Accordingly, the light extraction effect by the semiconductor light extraction unit 51 can be improved.

8 is a view showing a light emitting device package to which the light emitting device according to the embodiment is applied.

Referring to FIG. 8, the light emitting device package according to the embodiment may include a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120. The light emitting device 100 according to the embodiment, which is provided to and electrically connected to the first lead electrode 131 and the second lead electrode 132, and the molding member 140 surrounding the light emitting device 100. Include.

The body 120 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 131 and the second lead electrode 132 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be disposed on the body 120 or on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, and a die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The light emitting device according to the embodiment may be applied to the light unit. The light unit may include a structure in which a plurality of light emitting elements are arranged, and may include the display device illustrated in FIGS. 9 and 10 and the illumination device illustrated in FIG. 11.

Referring to FIG. 9, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 1031 may be provided, and light may be provided directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device 100 or a light emitting device package according to the embodiment described above. The light emitting devices 100 may be arranged on the substrate 1033 at predetermined intervals.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern. However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device 100 is provided on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting devices 100 may be mounted such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device 100 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

10 is a diagram illustrating another example of a display device according to an exemplary embodiment.

Referring to FIG. 10, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the above-described light emitting device 100 is arranged, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device 100 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

11 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 11, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device 100 according to an embodiment provided on the substrate 1532. The plurality of light emitting devices 100 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device 100 may be disposed on the substrate 1532. Each of the light emitting devices 100 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting devices 100 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

According to the embodiment, after the light emitting device 100 is packaged, the light emitting device 100 may be mounted on the substrate to be implemented as a light emitting module, or may be mounted and packaged as an LED chip to be implemented as a light emitting module.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

5: growth substrate 7: first pattern
10: first light emitting structure 11: first semiconductor layer of the first conductivity type
12: first active layer 13: second semiconductor layer of second conductivity type
15: first transparent electrode 19: first electrode
20: second light emitting structure 21: third semiconductor layer of the first conductivity type
22: second active layer 23: fourth semiconductor layer of second conductivity type
25: second transparent electrode 27: first protective layer
29: second electrode 51: semiconductor light extraction unit
61: permeable layer

Claims (12)

Growth substrate;
A plurality of light emitting cells disposed on the growth substrate;
A semiconductor light extracting unit disposed between the plurality of light emitting cells;
Light emitting device comprising a. The light emitting device of claim 1, wherein the semiconductor light extracting unit comprises a semiconductor material forming the plurality of light emitting cells. The light emitting device of claim 1, wherein the semiconductor light extractor is in contact with the growth substrate. The light emitting cell of claim 1, wherein each of the light emitting cells forming the plurality of light emitting cells comprises an active layer between a first conductive semiconductor layer, a second conductive semiconductor layer, the first conductive semiconductor layer, and the second conductive semiconductor layer. Light emitting device comprising. The light emitting device of claim 4, wherein a first conductive semiconductor layer of a first light emitting cell and a second conductive semiconductor layer of a second light emitting cell adjacent to the first light emitting cell are electrically connected among the plurality of light emitting cells. The light emitting device of claim 1, wherein the semiconductor light extracting unit is spaced apart from adjacent light emitting cells among the plurality of light emitting cells. The light emitting device of claim 1, further comprising a transmission layer disposed on the semiconductor light extraction unit. The light emitting device of claim 7, wherein the refractive index of the transmission layer has a smaller value than that of the semiconductor light extracting portion. The light emitting device of claim 1, wherein a height of the semiconductor light extracting portion is the same as a top surface of a semiconductor layer of an adjacent light emitting cell. The light emitting device of claim 1, wherein a height of the semiconductor light extractor is equal to a bottom surface of an active layer of an adjacent light emitting cell. Body;
A light emitting element according to any one of claims 1 to 10 arranged on the body;
A first lead electrode and a second lead electrode electrically connected to the light emitting device;
Emitting device package. Board;
A light emitting element according to any one of claims 1 to 10 arranged on the substrate;
An optical member through which light provided from the light emitting device passes;
Light unit comprising a.

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