KR20150078296A - Light emitting device with excellent reliability - Google Patents

Abstract

A light emitting device having improved reliability according to the present invention includes: a light emitting structure having a first conductive type nitride semiconductor layer, an active layer, and a second conductive type nitride semiconductor layer formed on a substrate; A first bonding pad and a second bonding pad electrically connected to the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer, respectively; A reflective insulation layer formed on at least one region of the light emitting structure, the first bonding pad, and the second bonding pad; A lead frame disposed to face the first bonding pad and the second bonding pad, the lead frame having at least one first trench; And a conductive paste formed between the reflective insulating layer and the lead frame to electrically bond the first and second bonding pads and the lead frame to each other.

Description

[0001] LIGHT EMITTING DEVICE WITH EXCELLENT RELIABILITY [0002]

The present invention relates to a light emitting device, and more particularly, to a light emitting device capable of stably insulating a light emitting structure, a first bonding pad, and a second bonding pad, which are attached in a flip type, And more particularly, to a light emitting device having improved reliability that can maximize light extraction efficiency due to an increase in reflectance due to introduction of a reflective insulating layer.

A light emitting device is a device using a light emitting phenomenon occurring when electrons and holes are re-combined. As a typical light emitting device, there is a nitride semiconductor light emitting device using a nitride semiconductor such as GaN. The nitride semiconductor light emitting device has a wide band gap and can realize various color light, and has excellent thermal stability and is applied to many fields.

In the case of such a light emitting element, the package is commercialized. The light emitting device package is usually manufactured by the following process. First, a light emitting device is mounted on a package substrate, and an electrode provided in the light emitting device is electrically connected to the external electrode through a wiring process. Then, an encapsulant containing a fluorescent material is coated on the package substrate and cured to mold the light emitting device.

In recent years, attempts have been made to shorten the electrical connection path between the light emitting device and the package substrate and use the device in a high-speed operation by mounting the light emitting device on the package substrate in the flip type.

A related prior art is Korean Patent Laid-Open Publication No. 10-2010-0038937 (Apr. 15, 2010), which discloses a light emitting device package.

It is an object of the present invention to provide a light emitting device with improved reliability in which the reflectance is increased by introducing a reflective insulating layer to improve the light extraction efficiency as well as securing excellent adhesion between the reflective layer and the lead frame.

According to an aspect of the present invention, there is provided a light emitting device including: a light emitting structure having a first conductive type nitride semiconductor layer, an active layer, and a second conductive type nitride semiconductor layer formed on a substrate; A first bonding pad and a second bonding pad electrically connected to the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer, respectively; A reflective insulation layer formed on at least one region of the light emitting structure, the first bonding pad, and the second bonding pad; A lead frame disposed to face the first bonding pad and the second bonding pad, the lead frame having at least one first trench; And a conductive paste formed between the reflective insulating layer and the lead frame to electrically bond the first and second bonding pads and the lead frame to each other.

A light emitting device having improved reliability according to the present invention includes a first bonding pad and a second bonding pad by a reflective insulation layer formed to cover a light emitting structure, a first bonding pad, and a second bonding pad, Not only can it be stably insulated, but also the light scattered by the reflective insulating layer disposed on the bottom surface can be reflected in the vertical direction, so that the reflectance is increased and the light extraction efficiency can be improved.

Further, the light emitting device with improved reliability according to the present invention can be manufactured by designing the first trench in which a part of the lead insulating film is removed, the second trench in which a part of the reflection insulating layer is removed and the first trench, , The conductive paste applied between the first and second bonding pads and the lead frame is prevented from flowing down during the reflow melting process, so that the lead frames of adjacent positions can be prevented from shorting to each other, The adhesion between the reflective insulating layer and the lead frame can be improved and the reliability of the device can be stably secured.

The light emitting device with improved reliability according to the present invention can be manufactured by mounting a light emitting structure, a first bonding pad, and a second bonding pad in a flip type via a conductive paste. As compared with a conventional method using a metal wire, The response speed becomes faster, and thus it can be utilized for high-speed operation of applying a high current.

1 is a cross-sectional view illustrating a light emitting device having improved reliability according to a first embodiment of the present invention.
Fig. 2 is an enlarged view of a portion of Fig. 1. Fig.
3 is an enlarged view of an embodiment of the reflective insulating layer, the lead frame, and the conductive paste in FIG.
4 is a cross-sectional view illustrating a light emitting device having improved reliability according to a second embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, a light emitting device having improved reliability according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view illustrating a light emitting device having improved reliability according to a first embodiment of the present invention.

Referring to FIG. 1, a light emitting device 100 having improved reliability according to a first embodiment of the present invention includes a light emitting structure 115, a first bonding pad 120, a second bonding pad 130, 140, a lead frame 150, and a conductive paste 160.

The light emitting structure 115 has a first conductive type nitride semiconductor layer 111, an active layer 112 and a second conductive type nitride semiconductor layer 113 which are sequentially stacked on a substrate 110.

The first conductive type nitride semiconductor layer 111 is formed on the substrate 110. The first conductive type nitride semiconductor layer 111 includes a first layer (not shown) made of AlGaN doped with silicon (Si) and a second layer (not shown) made of undoped GaN And may have a laminated structure formed alternately. Of course, the first conductive type nitride semiconductor layer 111 may be grown as a single nitride layer, but it must be grown in a stacked structure in which the first layer and the second layer including a buffer layer (not shown) are alternately formed. It is more preferable to form it in a laminated structure.

At this time, the substrate 110 may be formed of a material suitable for growing a nitride semiconductor single crystal. Typically, a sapphire substrate is exemplified. In addition to the sapphire substrate, zinc oxide (ZnO), gallium nitride (GaN), silicon (Si), silicon carbide (SiC), aluminum nitride ), And the like. Although not shown in the drawing, a buffer layer may be further formed between the substrate 110 and the first conductive type nitride semiconductor layer 111. At this time, the buffer layer is selectively provided on the upper surface of the substrate 110. The buffer layer is formed for the purpose of eliminating lattice mismatch between the substrate 110 and the first conductive type nitride semiconductor layer 111, May be selected from AlN, GaN, and the like.

The active layer 112 is formed on the first conductive type nitride semiconductor layer 111. The active layer 112 has a single quantum well structure between the first conductive type nitride semiconductor layer 111 and the second conductive type nitride semiconductor layer 113 or a multiple quantum well structure in which a plurality of quantum well layers and a quantum barrier layer are alternately stacked a multi-quantum well (MQW) structure. That is, the active layer 112 has a multiple quantum well structure by a quantum barrier layer made of a quaternary nitride layer of AlGaInN containing Al and a quantum well layer made of InGaN. The active layer 112 having such a multiple quantum well structure can suppress spontaneous polarization due to stress and deformation that occurs.

The second conductive type nitride semiconductor layer 113 includes, for example, a first layer (not shown) of p-type AlGaN doped with Mg with a p-type dopant and a second layer (not shown) made of p- May have a laminated structure formed alternately. Further, the second conductive type nitride semiconductor layer 113 can act as a carrier limiting layer like the first conductive type nitride semiconductor layer 111.

The first bonding pad 120 and the second bonding pad 130 are formed on the first conductive type nitride semiconductor layer 111 and the second conductive type nitride semiconductor layer 113, respectively. At this time, the first bonding pad 120 and the second bonding pad 130 are formed by E-beam deposition, thermal evaporation, and the like. And may be formed by any one method selected from sputtering deposition and the like. The first bonding pad 120 and the second bonding pad 130 may be formed of the same material by using the same mask. At this time, the first bonding pad 120 and the second bonding pad 130 may be formed of a material selected from Au, Cr-Au alloy, and the like.

The reflective insulation layer 140 is formed on at least one of the light emitting structure 115, the first bonding pad 120, and the second bonding pad 130. The reflective insulation layer 140 electrically isolates the anode and the cathode from each other and reflects the light emitted from the active layer 112 of the light emitting structure 115 in an upward vertical direction. The reflective insulating layer 150 serves to protect the light emitting structure 115, the first bonding pad 120 and the second bonding pad 130 and the scattering light emitted from the light emitting structure 115 and scattered In the vertical direction.

At this time, the reflective insulating layer 140 may be at least one selected from a metal layer, a metal oxide, a metal nitride, and a DBR (distributed Bragg reflector) layer. Specifically, the reflective insulating layer 140 may be formed of at least one selected from the group consisting of compounds containing Si, Mg, Ti, Al, Zn, C, In, and Sn and mixtures thereof, and any of oxides, fluorides, sulfides, One can be selected and used.

The reflective insulating layer 140 may have a multi-layer structure and may be a DBR (Distributed Bragg Reflector) layer or an ODR (Omni Directional Reflector) layer. At this time, when the reflective layer 140 is used as a DBR layer, it is composed of a plurality of layers having different refractive indices. The compound may be at least one selected from the group consisting of compounds, mixtures, oxides and nitrides of Si, Ti, Ta, V, Cr, Mg, Al, Zn, In, Sn and C applied as a DBR layer. Sulfide, and nitride. Among them, any one of the oxides, nitrides or fluorides is more preferable. The thickness of the DBR is preferably 10 to 900 angstroms, and the period of lamination is not limited, but preferably 20 periods (k = 20) or less.

On the other hand, when the reflective insulating layer 140 is used as an ODR, it is preferable to form four layers. It is preferable to use a dielectric thin film having a low first refractive index for the ODR 1 layer. The ODR 1 layer may be composed of at least one selected from the group consisting of compounds, mixtures, oxides and nitrides including Si, Ti, Mg, Al, Zn, In, Sn and C, and any one of fluoride, sulfide and nitride Can be selected and used. When the form of the double oxide and the fluoride is used as the ODR, it is preferable to form four layers. The ODR 1 layer is characterized by using a dielectric thin film having a low first refractive index. The ODR 1 layer may be composed of at least one selected from the group consisting of compounds, mixtures, oxides and nitrides including Si, Ti, Mg, Al, Zn, In, Sn and C, and any one of fluoride, sulfide and nitride Can be selected and used. Binary oxides and fluoride forms are preferred. The thickness may be 10 to 5,000 angstroms, and the preferred thickness is 10 to 1,000 angstroms.

The ODR 2 layer serves to reflect the emitted light like the first layer. The material of the ODR 2 layer may be at least one selected from the group consisting of Ag, Al, Pt, Ru, Rh and Pd, or a compound, a mixture, an oxide and a nitride thereof. The thickness of the ODR 2 layer is preferably 1,000 to 10,000 angstroms, more preferably 1,000 to 5,000 angstroms.

The ODR 3 layer prevents oxidation and electrically insulates the second layer. The ODR 3 layer may be formed of at least one selected from the group consisting of compounds, mixtures, oxides, and nitrides including Si, Ti, Mg, Al, Zn, In, Sn and C, and any one of fluoride, sulfide, . Among them, any one of oxide, nitride and fluoride is preferable. The ODR 3 layer is preferably 100 to 20,000 angstroms, more preferably 1,000 to 20,000 angstroms. The ODR 4 layer attaches the ODR 3 layer and the first and second bonding pads 120 and 130, and may be omitted depending on the case. The material of the ODR 4 layer may be at least one selected from the group consisting of Ti, Ni, Cr, Co, Fe, Hf, Pd, Zr, Pt and Y or a compound, a mixture, an oxide and a nitride thereof. The thickness of the fourth layer is preferably 1 to 2,000 angstroms, and more preferably 500 angstroms or less.

The lead frame 150 is disposed to face the first bonding pad 120 and the second bonding pad 130 and includes at least one first trench T1. As the material of the lead frame 150, one or more metals selected from copper (Cu), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W)

The first trench T1 prevents the conductive paste 160 applied between the first and second bonding pads 120 and 130 and the lead frame 150 from flowing down during the reflow melting process, And the adhesion between the reflective insulating layer 140 and the lead frame 150. At this time, it is preferable that the first trench T1 has a thickness of 1 to 95% of the entire thickness of the lead frame 150. If the thickness of the first trench T1 is less than 1% of the entire thickness of the lead frame 150, the space filled with the conductive paste 160 may be narrowed, resulting in difficulty in properly exhibiting the above effects. Conversely, if the thickness of the first trench T1 exceeds 95% of the total thickness of the lead frame 150, it may cause a decrease in the electrical conductivity of the lead frame 150 due to an excessive area design.

The conductive paste 160 is formed between the reflective insulating layer 140 and the lead frame 150 to electrically bond the first and second bonding pads 120 and 130 and the lead frame 150. [ At this time, the conductive paste 160 is filled between the reflective insulating layer 140 and the lead frame 150, and between the reflective insulating layer 140 and the first trench T1. In this case, when the light emitting structure 115, the first bonding pad 120, and the second bonding pad 130 are mounted in a flip type via the conductive paste 160 disposed on the lead frame 150, The electrical connection path is shortened and the response speed can be increased, so that a high-speed operation in which a high current is applied can be made possible.

On the other hand, FIG. 2 is an enlarged view of a portion of FIG.

Referring to FIG. 2, a light emitting device 100 having improved reliability according to an embodiment of the present invention may further include a transparent conductive layer 116, a reflective layer 117, and a first metal diffusion barrier layer 118.

A transparent conductive layer 116 is formed on the light emitting structure 115. The transparent conductive layer 116 is made of a transparent and conductive material, and may include a metal, for example, a complex layer of nickel (Ni) and gold (Au). The transparent conductive layer 116 may include an oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO) Indium Aluminum Zinc Oxide), GZO (Gallium Zinc Oxide), IGO (Indium Gallium Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Aluminum Tin Oxide) Layer made of at least one material selected from the group consisting of CIO (Cupper Indium Oxide), MIO (Magnesium Indium Oxide), MgO, ZnO, In ₂ O ₃ , TiTaO ₂ , TiNbO ₂ , TiOx, RuOx and IrOx, .

A reflective layer 117 is formed on the transparent conductive layer 116. The reflective layer 117 is made of a metal having high light reflectivity, and may be made of any one selected from among Ag, Al, Au, Pd, Pt, Ru, and Rh, or an alloy thereof. More specifically, the reflection layer 117 may include a light reflection layer (not shown) and a metal oxidation prevention layer (not shown). That is, the reflective layer 117 is preferably a multi-layer metal layer in which a light reflection layer made of an Ag material and a metal oxidation prevention layer made of a Ni material are sequentially stacked. The reflective layer 117 may have a thickness of 500 to 5000 ANGSTROM, more preferably 1500 to 3500 ANGSTROM.

At this time, in the case of the flip-type light emitting device, Ag having a high reflectivity is mainly used as the material of the reflection layer 117. Since the work function of Ag is as low as 5 eV or less, adhesion with the second conductivity type nitride semiconductor layer 113 is not properly performed. A transparent conductive layer 116 is formed between the second conductive type nitride semiconductor layer 113 and the reflective layer 117 for the purpose of enhancing the adhesion between the reflective layer 117 and the second conductive type nitride semiconductor layer 113. [ ) Were applied. Thus, when the transparent conductive layer 116 is interposed between the second conductive type nitride semiconductor layer 113 and the reflective layer 117, the transparent conductive layer 116 is firmly attached to the second conductive type nitride semiconductor layer 113 So that it is possible to improve the forward voltage Vf and optical power (PO) characteristics.

A first metal diffusion barrier layer 118 is formed on the reflective layer 117. It is preferable that the first metal diffusion barrier layer 118 is a multilayer metal layer containing at least one selected from the group consisting of Cr, Ni, Pt, Ti, Au, Cu and W.

The first metal diffusion barrier layer 118 is formed by melting the respective materials at the interface between the reflection layer 117 and the first and second bonding pads 120 and 130 so that the characteristics of the reflection layer 117, Thereby preventing the deterioration of the image quality.

Although not shown in the drawings, the first metal diffusion barrier layer 118 may further include a first adhesive metal layer (not shown) formed on each of the upper and lower portions. As the material of the first adhesive metal layer, it is preferable to use a metal layer containing Cr or Ti. At this time, the first adhesive metal layer disposed on the first metal diffusion barrier layer 118 is formed for the purpose of improving adhesion between the first metal diffusion barrier layer 118 and the reflective layer 117, and the first metal diffusion The first adhesive metal layer disposed under the barrier layer 118 is formed for the purpose of improving adhesion between the first metal diffusion barrier layer 118 and the first and second bonding pads 120 and 130.

Although not shown, each of the first and second bonding pads 120 and 130 may include an upper adhesive metal layer (not shown), a second metal diffusion barrier layer (not shown), a lower adhesive metal layer (not shown) . ≪ / RTI > At this time, each of the upper adhesive metal layer and the lower adhesive metal layer preferably uses a metal layer containing Ti or Au. The upper adhesive metal layer is formed for the purpose of improving the adhesive force between the first and second bonding pads 120 and 130 and the first metal diffusion barrier layer 118 and the lower adhesive metal layer is formed between the first and second bonding pads 120 130, and the first and second bumps (not shown) or the external electrode terminal 150, as shown in FIG.

The second metal diffusion barrier layer is preferably a multilayer metal layer comprising at least one selected from the group consisting of Cr, Ni, Pt, Ti, Au, Cu and W, To prevent the contact resistance between the second bonding pads 120 and 130 and the first metal diffusion barrier layer 118 from being lowered due to fusion of the materials.

FIG. 3 is a view showing an embodiment in which the reflective insulating layer, the lead frame, and the conductive paste portion of FIG. 1 are enlarged.

3, the reflection insulating layer 140 may include a second trench T2 at a position corresponding to the first trench T1 of the lead frame 150. In addition,

At this time, the second trench T2 preferably has a thickness of 5 to 90% of the total thickness of the reflection insulating layer 140. If the thickness of the second trench T2 is less than 5% of the total thickness of the reflective insulation layer 140, the space filled with the conductive paste 160 may be narrowed, resulting in difficulty in properly exhibiting the above effects. On the contrary, when the thickness of the second trench T2 exceeds 90% of the total thickness of the reflective insulating layer 140, there is a fear that the light emitting structure 115 may be damaged when a process tolerance error occurs. Increasing the thickness of the reflective insulation layer 140 may increase the overall thickness of the light emitting device.

Each of the first and second trenches T1 and T2 may have first and second concaved and convex patterns 142 and 152 disposed on the bottom surface thereof. At this time, the first and second concave-convex patterns 142 and 152 may be formed by texturing processing. Such texturing processing may be performed by performing a dry etching or a wet etching process.

When the first and second concaved and convex patterns 142 and 152 are formed by subjecting the bottom surfaces of the first and second trenches T1 and T2 arranged corresponding to mutually facing positions to texturing processing, The adhesion between the reflective insulating layer 140 and the lead frame 150 is improved due to the enlargement of the surface area of each bottom surface by the first and second uneven patterns 142 and 152, .

The light emitting device having improved reliability according to the first embodiment of the present invention includes a light emitting structure that is mounted on a lead frame in a flip type, a first bonding pad, and a reflective bonding layer formed to cover the second bonding pad, Not only the pad and the second bonding pad can be stably insulated but also the light scattered by the reflective insulating layer disposed on the bottom surface can be reflected in the vertical direction so that the reflectance is increased and the light extraction efficiency can be improved.

The light emitting device with improved reliability according to the first embodiment of the present invention includes a second trench in which a part of the reflection insulating layer is removed and a first trench in which a part of the lead frame disposed at a position corresponding to the second trench is removed, The conductive paste applied between the first and second bonding pads and the lead frame is prevented from flowing down during the reflow melting process so that the lead frames in adjacent positions are prevented from shorting to each other It is possible to improve the adhesive force between the reflective insulating layer and the lead frame and to secure the reliability of the device stably.

The light emitting device with improved reliability according to the first embodiment of the present invention can be manufactured by mounting a light emitting structure, a first bonding pad, and a second bonding pad in a flip type via a conductive paste, , The electrical connection path is shortened and the response speed is increased, so that it can be utilized in high-speed operation in which a high current is applied.

4 is a cross-sectional view illustrating a light emitting device having improved reliability according to a second embodiment of the present invention.

Referring to FIG. 4, the light emitting device 200 having improved reliability according to the second exemplary embodiment of the present invention includes a light emitting structure 215, a first bonding pad 220, a second bonding pad 230, Layer 240, a leadframe 250, a conductive paste 260, and first and second bumps 270 and 275. In one embodiment,

In this case, in the case of the light emitting device 200 having improved reliability according to the second embodiment of the present invention, except for the configuration for the lead frame 250 and the first and second bumps 270 and 275, The description is substantially the same as the example, and redundant description is omitted and only differences are explained.

The lead frame 250 has at least one paste discharge hole H. [ That is, the light emitting device 200 having improved reliability according to the second embodiment of the present invention has a paste discharge hole H corresponding to a component corresponding to the first trench (T1 in FIG. 1) of the lead frame 250 The light emitting device according to the first embodiment differs from the light emitting device with improved reliability according to the first embodiment.

At least one paste discharge hole (H) is formed to penetrate the lead frame (250). The paste discharge hole H serves to guide the conductive paste 260 interposed between the reflective insulating layer 240 and the lead frame 250 to be easily discharged to the outside.

Each of these paste discharge holes H is preferably designed so that the minimum diameter is 0.5 탆 or less and the maximum diameter has a diameter of 50% with respect to the total size of the light emitting device. When the diameter of the paste discharge hole (H) is less than 0.5 mu m, it may be difficult to easily discharge the remaining amount of the conductive paste (260) to the outside of the lead frame (250). Conversely, when the diameter of the paste discharge hole H exceeds 50% of the total size of the light emitting device, excessive discharge of the conductive paste 260 may increase the manufacturing cost, which is not preferable .

Although not shown in the drawings, the paste discharge holes H may be formed on the outer sides of the first and second bonding pads 220 and 230, respectively. When the paste discharge hole H is formed to penetrate the lead frame 250 at a position spaced apart from the inner and outer sides of the first and second bonding pads 220 and 230 as described above, 250 can be more effectively prevented from short-circuiting each other.

The first bonding pad 220 and the second bonding pad 230 may be electrically connected to the lead frame 250 using eutectic bonding or soldering bonding.

In the case of soldering, at least two alloys of Cr, Ti, Pt, Au, Mo and Sn, for example, Au / Sn, Pt / Au / Sn, Cr / Au / Electrical bonding is performed by the bumps 270 and 275. More preferably, the first and second bumps 270 and 275 are formed of a metal layer containing at least one selected from the group consisting of Au and Sn. On the other hand, in the case of eutectic bonding, an alloy of Sn, Ag, Cu or the like can be used. In particular, AuSn alloy, NiSn alloy and AgSn alloy are preferable. Accordingly, since the first and second bonding pads 220 and 230 of the present invention can be soldered bonding as well as eutectic bonding, any one of the two methods can be freely selected and mounted as needed.

In the light emitting device having improved reliability according to the second embodiment of the present invention, the conductive paste interposed between the reflective insulating layer and the lead frame can be easily discharged to the outside due to the design of the paste discharge hole formed to penetrate the lead frame , There is an advantage that it is possible to prevent short-circuiting of the lead frames at adjacent positions in advance.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. These changes and modifications may be made without departing from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

100: light emitting device 110: substrate
111: first conductive type nitride semiconductor layer 112: active layer
113: second conductive type nitride semiconductor layer 115: light emitting structure
116: transparent conductive layer 117: reflective layer
118: first metal diffusion barrier layer 120: first bonding pad
130: second bonding pad 140: reflective insulating layer
150: lead frame 160: conductive paste
T1, T2: first and second trenches

Claims (19)

A light emitting structure having a first conductive type nitride semiconductor layer, an active layer, and a second conductive type nitride semiconductor layer formed on a substrate;
A first bonding pad and a second bonding pad electrically connected to the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer, respectively;
A reflective insulation layer formed on at least one region of the light emitting structure, the first bonding pad, and the second bonding pad;
A lead frame disposed to face the first bonding pad and the second bonding pad, the lead frame having at least one first trench; And
And a conductive paste formed between the reflective insulation layer and the lead frame to electrically connect the first and second bonding pads and the lead frame to each other.
The method according to claim 1,
The light-
A transparent conductive layer formed on the light emitting structure,
A reflective layer formed on the transparent conductive layer;
Further comprising a first metal diffusion barrier layer formed on the reflective layer.
3. The method of claim 2,
The reflective layer
A light reflection layer, and a metal oxidation prevention layer.
3. The method of claim 2,
The reflective layer
Wherein the metal layer is a multi-layered metal layer containing Ag or Ni.
3. The method of claim 2,
The first metal diffusion barrier layer
Further comprising a first adhesive metal layer formed on each of the upper portion and the lower portion.
6. The method of claim 5,
The first adhesive metal layer
Wherein the metal layer is Cr or Ti.
3. The method of claim 2,
The first metal diffusion barrier layer
Wherein the metal layer is a multi-layered metal layer containing at least one selected from the group consisting of Cr, Ni, Pt, Ti, Au, Cu and W.
3. The method of claim 2,
Each of the first and second bonding pads
An upper adhesive metal layer,
A second metal diffusion barrier layer,
And a lower adhesive metal layer.
9. The method of claim 8,
Each of the upper adhesive metal layer and the lower adhesive metal layer
Ti, or Au.
9. The method of claim 8,
The second metal diffusion barrier layer
Wherein the metal layer is a multi-layered metal layer containing at least one selected from the group consisting of Cr, Ni, Pt, Ti, Au, Cu and W.
The method according to claim 1,
The light-
Further comprising a first bump and a second bump corresponding to the first and second bonding pads, respectively.
12. The method of claim 11,
Each of the first and second bumps
Au, and Sn. The side-emitting type nitride semiconductor light-emitting device according to claim 1, wherein the metal layer is a metal layer containing at least one selected from the group consisting of Au and Sn.
The method according to claim 1,
The reflective insulation layer
Wherein the at least one second trench comprises at least one second trench.
The method according to claim 1,
The reflective insulation layer
A metal layer, a metal oxide, a metal nitride, and a DBR (distributed Bragg reflector) layer.
15. The method according to any one of claims 1 to 14,
The conductive paste
Wherein the first and second trenches are filled with at least one of the first and second trenches.
16. The method of claim 15,
The first trench
Wherein the lead frame has a thickness of 1 to 95% of the total thickness of the lead frame.
16. The method of claim 15,
The second trench
Wherein the reflective insulating layer has a thickness of 5 to 90% of the total thickness of the reflective insulating layer.
16. The method of claim 15,
Each of the first and second trenches
And a first and a second concavo-convex pattern.
The method according to claim 1,
The first trench
Wherein at least one of the light emitting element is formed to penetrate the lead frame.

Images