KR20150120869A - Substrate processing apparatus - Google Patents

Abstract

The object of the present invention is to provide a substrate processing apparatus capable of highly accurately detecting a metal film remaining as a residue on a polished surface of a polished substrate. The substrate processing apparatus includes a polishing section 3 for polishing a surface to be polished of a substrate and removing a metal film formed on the surface to be polished, a cleaning section 4 for cleaning and drying the substrate polished by the polishing section 3, , And a temporary holding table (180) on which the substrate is temporarily placed after being polished by the polishing section (3). Sensors 8 and 9 for detecting the metal film remaining on the surface to be polished of the substrate are provided on the temporary mounting base 180. [

Description

[0001] SUBSTRATE PROCESSING APPARATUS [0002]

The present invention relates to a substrate processing apparatus for detecting a residue of a metal film remaining on a surface (polished surface) of a polished substrate.

Conventionally, there is known a substrate processing apparatus having a polishing section for polishing a substrate such as a semiconductor wafer to remove a metal film formed on the substrate, and a cleaning section for cleaning and drying the substrate polished by the polishing section. In the polishing section, for example, a polishing pad is attached to the upper surface of a polishing table to form a polishing surface, and a surface to be polished of a substrate such as a semiconductor wafer held by the polishing head (a substrate holding mechanism) Chemical mechanical polishing (CMP) for polishing the surface to be polished in a flat manner by relative movement between the polishing surface and the surface to be polished by rotation of the polishing table and rotation of the polishing head while supplying the slurry to the polishing surface Is done.

As described above, in the CMP apparatus, the metal film excessively formed on the substrate is removed by polishing, but when the operation of the apparatus is defective, the CMP apparatus can not completely remove the surface of the substrate (polished surface) There is a case to be left. Therefore, a device has been proposed in which a sensor head is installed (buried) in a polishing table and the sensor head is rotated together with the polishing table during polishing of the wafer to obtain film thickness data across the surface of the wafer For example, Patent Document 1).

[Patent Document 1] JP-A-2013-222856

However, in the conventional apparatus, only the film thickness data (the film thickness data, not the whole wafer) when the sensor head comes under the wafer can be obtained, and the film thickness data The measurement accuracy of the film thickness is limited.

The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus capable of highly accurately detecting a metal film remaining as a residue on a polished surface of a polished substrate.

The substrate processing apparatus of the present invention comprises a polishing section for polishing a surface to be polished of a substrate to remove a metal film formed on the surface to be polished, a cleaning section for cleaning and drying the substrate polished by the polishing section, And a sensor for detecting a metal film remaining on a surface to be polished of the substrate is provided in the temporary holder.

According to this configuration, the sensor is provided at a temporary stand where the substrate is temporarily placed after polishing. Therefore, the metal film remaining as a residue on the surface to be polished of the substrate placed on the temporary stand can be detected by the sensor provided on the temporary stand. In this case, the metal film on the polished surface of the polished substrate can be detected with high accuracy as compared with the case where sensors are embedded (embedded) in the polishing table as in the conventional case.

Further, in the substrate processing apparatus of the present invention, the temporary rest stand may be provided between the polishing section and the cleaning section, and the substrate polished by the polishing section may be temporarily placed on the temporary resting stand before being cleaned by the cleaning section.

According to this configuration, the sensor is provided at the temporary stand between the polishing section and the cleaning section. Therefore, before the substrate polished by the polishing section is cleaned by the cleaning section, the metal film on the surface to be polished of the substrate placed on the temporary mounting table can be detected with high accuracy by the sensor provided on the temporary mounting table.

In the substrate processing apparatus of the present invention, the sensor may be configured to detect a metal film on the entire surface of the substrate to be polished of the substrate placed on the temporary stand.

According to this configuration, the metal film on the entire surface of the polished surface of the substrate placed on the temporary stand can be detected by the sensor provided on the temporary stand. Therefore, in the sensor embedded in the polishing table as in the prior art, the metal film can be detected with high accuracy over the entire surface of the substrate to be polished, as compared with the case where only a part of the metal film on the polished surface of the substrate can be detected .

Further, in the substrate processing apparatus of the present invention, the sensor may be an eddy-current type sensor.

According to this configuration, the residue of the metal film remaining on the surface to be polished of the substrate can be detected with high accuracy by using the eddy current sensor.

In the substrate processing apparatus of the present invention, the sensor may be an infrared laser type sensor.

According to this configuration, the residue of the metal film remaining on the surface to be polished of the substrate can be detected with high accuracy by using the infrared laser type sensor.

Further, in the substrate processing apparatus of the present invention, the sensor may be an infrared camera type sensor.

According to this configuration, the residue of the metal film remaining on the surface to be polished of the substrate can be detected with high accuracy by using the infrared camera type sensor.

According to the present invention, the metal film remaining as a residue on the polished surface of the polished substrate can be detected with high accuracy.

1 is a plan view showing the entire configuration of a substrate processing apparatus according to an embodiment of the present invention.
2 is a perspective view showing the structure of a swing transporter according to an embodiment of the present invention.
Fig. 3 (a) is a plan view showing the washing section in the embodiment of the present invention. Fig.
Fig. 3 (b) is a side view showing the cleaning section in the embodiment of the present invention. Fig.
4 is a schematic diagram showing an example of a cleaning line in an embodiment of the present invention.
5 is a schematic view showing an example of a cleaning line in an embodiment of the present invention.
6 is a schematic diagram showing an example of a cleaning line in an embodiment of the present invention.
7 is a view showing an example of a sensor according to an embodiment of the present invention.
8 is a view showing an example of a sensor according to an embodiment of the present invention.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, a case of a substrate processing apparatus for polishing a substrate by chemical mechanical polishing (CMP) is exemplified.

1 is a plan view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention. 1, the substrate processing apparatus is provided with a housing 1 having a substantially rectangular shape. The interior of the housing 1 is partitioned by the partition walls 1a and 1b into rod- And is divided into a polishing section (3) and a cleaning section (4). The load / unload part 2, the polishing part 3, and the cleaning part 4 are independently assembled. The substrate processing apparatus also has a control section 5 for controlling the substrate processing operation.

The load / unload section 2 includes two or more (four in this embodiment) front load sections 20 on which wafer cassettes for stocking a plurality of wafers (substrates) are stacked. These front rod portions 20 are arranged adjacent to the housing 1 and are arranged along the width direction (direction perpendicular to the longitudinal direction) of the substrate processing apparatus. An open cassette, an SMIF (Standard Manufacturing Interface) pod, or a Front Opening Unified Pod (FOUP) can be mounted on the front load unit 20. [ Here, SMIF and FOUP are enclosed containers capable of maintaining an environment independent of the external space by accommodating the wafer cassettes therein and covering them with barrier ribs.

The loading / unloading section 2 is provided with a traveling mechanism 21 along the arrangement of the front rod section 20 and is provided with two carriages (not shown) movable along the arrangement direction of the wafer cassettes A robot (loader) 22 is provided. The carrying robot 22 is able to access the wafer cassette mounted on the front rod portion 20 by moving on the traveling mechanism 21. [ Each of the transfer robots 22 is provided with two upper and lower hands for use in returning the upper hand processed wafer to the wafer cassette and using the lower hand for taking out the wafer before processing from the wafer cassette, Upper and lower hands can be used separately. Further, the lower hand of the transfer robot 22 is configured to be able to reverse the wafer by rotating around its axis.

The inside of the load / unload section 2 is located outside of the substrate processing apparatus, the polishing section 3, and the cleaning section 4, because the load / unload section 2 is an area in which the cleanest state needs to be maintained It is always maintained at high pressure. The polishing portion 3 is the most dirty area because the slurry is used as the polishing liquid. Therefore, a negative pressure is formed inside the polishing section 3, and the pressure thereof is kept lower than the internal pressure of the cleansing section 4. A filter fan unit (not shown) having a clean air filter such as a HEPA filter, a ULPA filter, or a chemical filter is provided in the load / unload section 2, and particles, toxic vapors, The clean air that has been removed is always being sprayed.

The polishing unit 3 is a region where polishing (planarization) of the wafer is performed and includes a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, a fourth polishing unit 3D, . 1, the first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D are arranged along the longitudinal direction of the substrate processing apparatus, Respectively. In this polishing section 3, the surface of the wafer (the surface to be polished) is polished to remove the metal film formed on the surface to be polished.

1, the first polishing unit 3A includes a polishing table 30A provided with a polishing pad 10 having a polishing surface, a holding table 30A holding the wafer and holding the wafer on a polishing table 30A A top ring 31A for polishing the pad 10 while pressurizing the polishing pad 10; a polishing liquid supply nozzle 32A for supplying a polishing liquid or a dressing liquid (for example, pure water) to the polishing pad 10; A dresser 33A for dressing the polishing surface of the polishing cloth 10 and a mixed fluid or liquid (for example, pure water) of a liquid (for example, pure water) and a gas And an atomizer 34A which is sprayed on the surface.

Similarly, the second polishing unit 3B includes a polishing table 30B provided with a polishing pad 10, a top ring 31B, a polishing liquid supply nozzle 32B, a dresser 33B, an atomizer 34B . The third polishing unit 3C includes a polishing table 30C provided with a polishing pad 10, a top ring 31C, a polishing liquid supply nozzle 32C, a dresser 33C, an atomizer 34C . The fourth polishing unit 3D includes a polishing table 30D provided with a polishing pad 10, a top ring 31D, a polishing liquid supply nozzle 32D, a dresser 33D, an atomizer 34D .

Next, a transport mechanism for transporting the wafers will be described. As shown in Fig. 1, a first linear transporter 6 is disposed adjacent to the first polishing unit 3A and the second polishing unit 3B. The first linear transporter 6 has four transporting positions along the direction in which the polishing units 3A and 3B are arranged (the first transporting position TP1 and the second transporting position TP2 ), The third transfer position TP3, and the fourth transfer position TP4).

A second linear transporter 7 is disposed adjacent to the third polishing unit 3C and the fourth polishing unit 3D. The second linear transporter 7 has three transporting positions along the direction in which the polishing units 3C and 3D are arranged (a fifth transporting position TP5 and a sixth transporting position TP6 ), And a seventh transfer position (TP7).

The wafer is transported to the polishing units 3A and 3B by the first linear transporter 6. As described above, the top ring 31A of the first polishing unit 3A moves between the polishing position and the second carrying position TP2 by the swinging motion of the top ring head. Therefore, the wafer is transferred to the top ring 31A at the second transport position TP2. Likewise, the top ring 31B of the second polishing unit 3B moves between the polishing position and the third carrying position TP3, and the transfer of the wafer to the top ring 31B is performed at the third carrying position TP3 All. The top ring 31C of the third polishing unit 3C moves between the polishing position and the sixth conveying position TP6 and the transfer of the wafer to the top ring 31C is performed at the sixth conveying position TP6. The top ring 31D of the fourth polishing unit 3D moves between the polishing position and the seventh transfer position TP7 and the transfer of the wafer to the top ring 31D is performed at the seventh transfer position TP7.

At the first transport position TP1, a lifter 11 for receiving wafers from the transport robot 22 is disposed. The wafer is transferred from the carrying robot 22 to the first linear transporter 6 through the lifter 11. [ A shutter (not shown) is provided between the lifter 11 and the conveying robot 22 and is provided on the partition wall 1a. When the wafer is conveyed, the shutter is opened to transfer the lifter 11 from the conveying robot 22, So that the wafer is transferred. A swing transporter 12 is disposed between the first linear transporter 6, the second linear transporter 7, and the cleaner 4. The swing transporter 12 has a hand which can move between the fourth transportation position TP4 and the fifth transportation position TP5 and the second linear transporter 6 is moved from the first linear transporter 6 to the second linear transporter 7, The wafer is transferred by the swing transporter 12. The wafer is transported to the third polishing unit 3C and / or the fourth polishing unit 3D by the second linear transporter 7. Further, the wafer polished in the polishing section 3 is conveyed to the cleaning section 4 via the swing transporter 12.

Fig. 2 is a perspective view showing the structure of the swing transporter 12. Fig. The swing transporter 12 is provided on the frame 160 of the substrate processing apparatus and includes a linear guide 161 extending in the vertical direction, a swing mechanism 162 provided on the linear guide 161, And a vertical movement driving mechanism 165 as a driving source for moving the vertical movement mechanism 162 in the vertical direction. As the elevation drive mechanism 165, a robot cylinder or the like having a servo motor and a ball screw can be employed. A swing mechanism 167 is connected to the swing mechanism 162 via a swing arm 166. A gripping mechanism 170 for gripping the wafer W is connected to the reversing mechanism 167. On the side of the swing transporter 12, a provisional stand 180 of a wafer W provided on a frame (not shown) is disposed. This temporary stand 180 is provided between the polishing section 3 and the cleaning section 4 as shown in Fig. The temporary stand 180 temporarily holds the wafer W after being polished by the polishing unit 3. [ The wafer W polished by the polishing section 3 is temporarily placed in the temporary holding table 180 before being cleaned by the cleaning section 4. [ In this case, the temporary cradle 180 is disposed adjacent to the first linear transporter 6, and is located between the first linear transporter 6 and the cleaner 4.

The swing arm 166 pivots about the rotational axis of the motor by driving a motor (not shown) of the swing mechanism 162. This causes the reversing mechanism 167 and the gripping mechanism 170 to pivot together and the gripping mechanism 170 moves the fourth transfer position TP4, the fifth transfer position TP5, and the temporary placement table 180, .

The gripping mechanism 170 has a pair of gripping arms 171 for gripping the wafer W. At both ends of each of the grip arms 171, a chuck 172 for gripping the outer peripheral edge of the wafer W is provided. The chuck 172 protrudes downward from both ends of the grip arm 171. The gripping mechanism 170 is provided with an opening / closing mechanism 173 for moving the pair of gripping arms 171 in the direction in which the gripping arms 171 are moved close to and away from the wafer W.

The grasping mechanism 170 is held until the chuck 172 of the grasping arm 171 is positioned in the same plane as the wafer W in the state in which the grasping arm 171 is opened And lowered by the elevation drive mechanism 165. The opening and closing mechanism 173 is driven to move the grip arms 171 in the directions close to each other and the outer peripheral edge of the wafer W is gripped by the chuck 172 of the grip arm 171. In this state, the gripping arm 171 is raised by the lifting / lowering drive mechanism 165.

The reversing mechanism 167 has a rotating shaft 168 connected to the holding mechanism 170 and a motor (not shown) for rotating the rotating shaft 168. [ By driving the rotary shaft 168 by the motor, the gripping mechanism 170 rotates by 180 degrees as a whole, whereby the wafer W held by the gripping mechanism 170 is reversed. As described above, since the entire gripping mechanism 170 is reversed by the reversing mechanism 167, wafer transfer between the gripping mechanism and the reversing mechanism, which is conventionally required, can be omitted. When the wafer W is transported from the fourth transport position TP4 to the fifth transport position TP5, the reversing mechanism 167 does not reverse the wafer W, but moves the wafer W in a state in which the surface to be polished faces downward The wafer W is transferred. On the other hand, when the wafer W is transported from the fourth transport position TP4 or the fifth transport position TP5 to the temporary platform 180, the wafer W is transported by the reversing mechanism 167 so that the polished surface faces upward W) is inverted.

The temporary stand 180 includes a base plate 181, a plurality of vertical rods 182 fixed to the upper surface of the base plate 181 and two vertical rods 182 fixed to the upper surface of the base plate 181 And has one inverted L-shaped horizontal rod 183. The horizontal rod 183 has a vertical portion 183a connected to the upper surface of the base plate 181 and a horizontal portion 183b extending horizontally from the upper end of the vertical portion 183a toward the gripping mechanism 170 have. A plurality of pins 184 (two in FIG. 2) for supporting the wafer W are provided on the upper surface of the horizontal portion 183b. The upper end of the vertical rod 182 is also provided with a pin 184 for supporting the wafer W, respectively. The tip of the pin 184 is located in the same horizontal plane. The horizontal rod 183 is arranged at a position nearer to the center of rotation of the wafer W than the vertical rod 182 (i.e., the motor rotation axis of the swing mechanism 162).

The gripping mechanism 170 inverted by the turning mechanism 167 enters the gap between the horizontal portion 183b of the horizontal rod 183 and the base plate 181 while holding the wafer W, The turning of the gripping mechanism 170 by the swing mechanism 162 is stopped when all the pins 184 are positioned below the wafer W. [ In this state, by opening the grip arm 171, the wafer W is loaded on the temporary cradle 180. The wafer W loaded on the temporary placement table 180 is conveyed to the cleaning section 4 by the conveying robot of the cleaning section 4 to be described below.

3 (a) is a plan view showing the cleaning part 4, and Fig. 3 (b) is a side view showing the cleaning part 4. Fig. In the cleaning section 4, the wafer W polished by the polishing section 3 is cleaned and dried. 3 (a) and 3 (b), the cleaning section 4 includes a first cleaning chamber 190, a first transport chamber 191, a second cleaning chamber 192 A second conveyance chamber 193, and a drying chamber 194. The second conveyance chamber 193 and the drying chamber 194 are separated from each other. In the first cleaning chamber 190, an upper primary cleaning module 201A and a lower primary cleaning module 201B arranged in the longitudinal direction are disposed. The upper side primary cleaning module 201A is disposed above the lower primary cleaning module 201B. Similarly, in the second cleaning chamber 192, an upper secondary cleaning module 202A and a lower secondary cleaning module 202B arranged in the vertical direction are disposed. The upper secondary cleaning module 202A is disposed above the lower secondary cleaning module 202B. The primary and secondary cleaning modules 201A, 201B, 202A, and 202B are cleaners that clean the wafer using a cleaning liquid. Since the primary and secondary cleaning modules 201A, 201B, 202A, and 202B are arranged along the vertical direction, there is an advantage that the footprint area is small.

Between the upper secondary cleaning module 202A and the lower secondary cleaning module 202B, a temporary holding table 203 for the wafer is provided. In the drying chamber 194, an upper drying module 205A and a lower drying module 205B arranged in the longitudinal direction are disposed. The upper drying module 205A and the lower drying module 205B are isolated from each other. Filter fan units 207 and 207 for supplying clean air into the drying modules 205A and 205B are provided at upper portions of the upper side drying module 205A and the lower side drying module 205B. The upper side first cleaning module 201A, the lower first cleaning module 201B, the upper secondary cleaning module 202A, the lower secondary cleaning module 202B, the temporary holding table 203, the upper drying module 205A, The drying module 205B is fixed to a frame (not shown) through bolts or the like.

A first transport robot 209 capable of moving up and down is disposed in the first transport chamber 191 and a second transport robot 210 capable of moving up and down is disposed in the second transport chamber 193. [ The first conveying robot 209 and the second conveying robot 210 are movably supported by supporting shafts 211 and 212 extending in the longitudinal direction, respectively. The first conveying robot 209 and the second conveying robot 210 have a driving mechanism such as a motor inside thereof and are movable up and down along the supporting shafts 211 and 212. Like the carrying robot 22, the first carrying robot 209 has two upper and lower hands. As shown by the dotted line in FIG. 3A, the first carrying robot 209 is disposed at a position where the lower hand thereof is accessible to the temporary placement table 180 described above. When the lower hand of the first carrying robot 209 accesses the temporary cradle 180, a shutter (not shown) provided on the partition wall 1b is opened.

The first conveying robot 209 includes a temporary holding table 180, an upper primary cleaning module 201A, a lower primary cleaning module 201B, a temporary holding table 203, an upper secondary cleaning module 202A, And moves the wafer W between the cleaning modules 202B. The first transfer robot 209 uses the lower hand when transferring the wafer before cleaning (wafer on which the slurry is attached), and uses the upper hand when transferring the wafer after cleaning. The second conveying robot 210 is disposed between the upper secondary washing module 202A, the lower secondary washing module 202B, the temporary holding table 203, the upper drying module 205A and the lower drying module 205B, . Since the second conveying robot 210 carries only the cleaned wafer, it has only one hand. The carrying robot 22 shown in Fig. 1 takes out the wafer from the upper side drying module 205A or the lower side drying module 205B by using the upper hand, and returns the wafer to the wafer cassette. When the upper hand of the transfer robot 22 accesses the drying modules 205A and 205B, a shutter (not shown) provided on the partition 1a is opened.

Since the cleaning section 4 includes two primary cleaning modules and two secondary cleaning modules, it is possible to constitute a plurality of cleaning lines for cleaning a plurality of wafers in parallel. The "cleaning line" is a movement path when one wafer is cleaned by a plurality of cleaning modules in the cleaning section 4. For example, as shown in Fig. 4, one wafer is transferred to the first transfer robot 209, the first primary cleaning module 201A, the first transfer robot 209, the upper secondary cleaning module 202A, The second transfer robot 210 and the upper side drying module 205A are sequentially transferred (see the cleaning line 1), and the other wafers are transferred to the first transfer robot 209 and the lower primary cleaning module 201B, the first conveying robot 209, the second secondary cleaning module 202B, the second conveying robot 210 and the lower drying module 205B can be conveyed in order (see the cleaning line 2). By this two parallel cleaning lines, a plurality of (typically two) wafers can be cleaned and dried at about the same time.

Further, in the two parallel cleaning lines, a plurality of wafers may be cleaned and dried by setting a predetermined time difference. Advantages of cleaning at a predetermined time difference are as follows. The first conveying robot 209 and the second conveying robot 210 are also used in a plurality of cleaning lines. Therefore, when a plurality of cleaning or drying processes are concurrently terminated, these carrying robots can not carry the wafers immediately, and the throughput is deteriorated. In order to avoid such a problem, the processed wafers can be quickly transported by the transporting robots 209 and 210 by cleaning and drying a plurality of wafers by a predetermined time difference.

The slurry is attached to the polished wafer, and it is not preferable to leave the wafer for a long time in this state. This is because copper as the wiring metal sometimes is corroded by the slurry. According to this cleaning section 4, since two primary cleaning modules are provided, even when the preceding wafer is cleaned by either the upper primary cleaning module 201A or the lower primary cleaning module 201B, The wafer can be carried into the other primary cleaning module and cleaned. Therefore, it is possible not only to realize high throughput but also to immediately clean the polished wafer, thereby preventing corrosion of copper.

5, the wafer is transferred to the first transfer robot 209, the first primary cleaning module 201A, the first transfer robot 209, the temporary transfer table 203, the second conveying robot 210, and the upper side drying module 205A can be conveyed in order, and the secondary cleaning in the second cleaning chamber 192 can be omitted. Further, as shown in FIG. 6, for example, when the lower secondary cleaning module 202B is in failure, the wafer can be carried to the upper secondary cleaning module 202A. As described above, the wafers can be assigned to predetermined cleaning lines by the first conveying robot 209 and the second conveying robot 210 as needed. The selection of such a cleaning line is determined by the control unit 5.

Each of the cleaning modules 201A, 201B, 202A, and 202B has a detector (not shown) for detecting a failure. When any one of the cleaning modules 201A, 201B, 202A, and 202B fails, the detector detects the failure and sends a signal to the control unit 5. [ The control unit 5 selects a cleaning line to avoid the failed cleaning module and switches the current cleaning line to the newly selected cleaning line. Although two primary cleaning modules and two secondary cleaning modules are provided in the present embodiment, the present invention is not limited to this, and even if three or more primary cleaning modules and / or secondary cleaning modules are provided good.

In addition, the temporary cleaning table may be provided in the first cleaning chamber 190. For example, as with the temporary cradle 203, a temporary cradle can be provided between the upper primary cleaning module 201A and the lower primary cleaning module 201B. When a certain cleaning module fails, the two wafers can be transferred to the temporary cradle 180 (see FIG. 3A) and the temporary cradle in the first cleaning chamber 190.

The concentration of the cleaning liquid used in the primary cleaning modules 201A and 201B may be different from the concentration of the cleaning liquid used in the secondary cleaning modules 202A and 202B. For example, the concentration of the cleaning liquid used in the primary cleaning modules 201A and 201B is made higher than the concentration of the cleaning liquid used in the secondary cleaning modules 202A and 202B. It is generally considered that the cleaning effect is almost proportional to the concentration of the cleaning liquid and the cleaning time. Therefore, by using a cleaning liquid having a high concentration in the primary cleaning, even if the contamination of the wafer is severe, the time for the primary cleaning and the time for the secondary cleaning can be made substantially equal.

Next, a characteristic configuration of the substrate processing apparatus of the present embodiment will be described with reference to FIG. In the substrate processing apparatus of the present embodiment, a sensor for detecting the metal film remaining on the surface (polishing surface to be polished) of the wafer W is provided in the temporary placement table 180.

Fig. 7 is a view showing an example of the sensor according to the present embodiment. 7, the sensor 8 is disposed so as to cover the entire surface of the wafer (polishing surface to be polished) placed on the temporary placement table 180, and can detect the metal film on the entire surface of the polished surface . Further, as shown in Fig. 8, a bar-type sensor 9 may be used. In this case, the sensor 9 is configured to be able to move on the entire surface of the wafer (the surface to be polished) by a robot (not shown). The sensors 7, 8 are, for example, eddy current sensors. As the sensor, an infrared laser sensor or an infrared camera sensor may be used.

When an abnormality is detected as a result of detecting the metal film remaining on the surface (polished surface) of the wafer W by the sensors 7 and 8 (for example, when the thickness of the detected metal film is smaller than a predetermined reference value , The identification information of the detected wafer W is sent to the control unit 5 so that the wafer does not proceed to the next step after the cleaning and drying process (for example, To be discarded). If an abnormality is detected, treatment for stopping the next wafer W to be carried on the polishing tables 30A to 30D may be performed in order to prevent secondary damage.

According to the substrate processing apparatus of this embodiment, the sensors 7 and 8 are provided in the temporary placement table 180 where the wafer W is temporarily placed after polishing. Therefore, the metal film remaining as a residue on the surface (the surface to be polished) of the wafer W placed on the temporary placement table 180 can be detected by the sensors 7 and 8 provided on the temporary placement table 180. In this case, the metal film on the surface (polished surface) of the polished wafer W can be detected with high accuracy as compared with the case where sensors are embedded (embedded) in the polishing table as in the conventional case.

In the present embodiment, sensors 7 and 8 are provided on a temporary placement table 180 between the polishing section 3 and the cleaning section 4. [ Therefore, before the wafer W polished by the polishing section 3 is cleaned by the cleaning section 4, the metal film on the surface to be polished of the wafer W placed on the temporary placement table 180 Metal film) can be detected with high accuracy by the sensors 7, 8 provided on the temporary placement table 180. [

In the present embodiment, the metal film on the entire surface of the polishing surface of the wafer W placed on the temporary placement table 180 can be detected by the sensors 7 and 8 provided on the temporary placement table 180. [ Therefore, in the sensor embedded in the polishing table as in the prior art, only a part of the metal film on the surface to be polished of the wafer W can be detected, The residue can be detected with high accuracy.

For example, the sensors 7, 8 are eddy-current sensors. In this case, the residue of the metal film remaining on the surface to be polished of the wafer W can be detected with high accuracy by using the eddy current sensor. The sensors 7 and 8 may be an infrared laser sensor or an infrared camera sensor. In this case, the residue of the metal film remaining on the surface to be polished of the wafer W can be detected with high accuracy by using an infrared laser sensor or an infrared camera sensor.

Although the embodiment of the present invention has been described above by way of example, the scope of the present invention is not limited thereto, but can be changed or modified within the scope of the claims.

As described above, the substrate processing apparatus according to the present invention has the effect of highly accurately detecting the metal film remaining as a residue on the polished surface of the polished substrate, and is useful as a chemical mechanical polishing (CMP) apparatus or the like .

1: Housing
2: Load / unload section
3:
3A: first polishing unit
3B: second polishing unit
3C: Third polishing unit
3D: fourth polishing unit
4: Taxation
5:
6: 1st linear transporter
7: Second linear transporter
8: Sensor
9: Sensor
10: Polishing pad
11: lifter
12: Swing Transporter
20: Front rod section
21:
22: Carrying robot (loader)
30A to 30D: polishing table
31A to 31D: Top ring
32A to 32D: abrasive liquid supply nozzle
33A to 33D: Dresser
34A to 34D: Atomizer
TP1: First transport position
TP2: 2nd conveying position
TP3: Third conveying position
TP4: Fourth conveying position
TP5: fifth conveying position
TP6: Sixth conveying position
TP7: Seventh conveying position
180: temporary holder
190: First cleaning chamber
191: Second cleaning chamber
192: Third cleaning chamber
193: Fourth cleaning chamber
203: temporary cradle

Claims (6)

A polishing section for polishing a surface to be polished of the substrate to remove a metal film formed on the surface to be polished;
A cleaning unit cleaning and drying the substrate polished by the polishing unit;
A temporary holder for temporarily holding the substrate after being polished by the polishing unit;
The substrate processing apparatus comprising:
Wherein the temporary stand is provided with a sensor for detecting a metal film remaining on a surface to be polished of the substrate. The method according to claim 1,
Wherein said temporary shelf is provided between said polishing section and said cleaning section,
Wherein the temporary holding table is temporarily placed on the substrate polished by the polishing section before being cleaned by the cleaning section. 3. The method according to claim 1 or 2,
Wherein the sensor is configured to detect a metal film on the entire surface of the substrate to be polished of the substrate placed on the temporary stand. 3. The method according to claim 1 or 2,
Wherein the sensor is an eddy-current sensor. 3. The method according to claim 1 or 2,
Wherein the sensor is an infrared laser type sensor. 3. The method according to claim 1 or 2,
Wherein the sensor is an infrared camera type sensor.

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