KR20150139029A - a conducting apparatus for a flexible substrate - Google Patents

Abstract

The present invention relates to a process chamber comprising: a plurality of process chambers in which a flexible substrate is deposited and spaced apart; And a gas supply unit for supplying a gas having a predetermined pressure to the upper surface and the lower surface of the flexible substrate so as to maintain the tension of the flexible substrate moving in the division chamber, And an apparatus for processing a flexible substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible substrate processing apparatus, and more particularly, to a flexible substrate processing apparatus capable of preventing damage to a substrate during a deposition process for a flexible substrate.

Generally, a solar cell is a clean energy source that generates energy by converting light energy transferred from the sun to the earth into electric energy, thereby reducing the amount of carbon dioxide generated to prevent global warming.

Such a solar cell can be classified into a substrate type solar cell and a thin film solar cell.

A substrate-type solar cell is a solar cell manufactured using a semiconductor material itself such as silicon as a substrate, and a thin-film solar cell is formed by forming a semiconductor in the form of a thin film on a substrate such as glass.

Although the substrate type solar cell has a somewhat higher efficiency than the thin film type solar cell, there is a limitation in minimizing the thickness in the process and a manufacturing cost is increased because an expensive semiconductor substrate is used.

Thin-film solar cells have advantages in that they are suitable for mass production because they can be manufactured with a thin thickness and use low-cost materials, thereby reducing manufacturing costs, although the efficiency is somewhat lower than that of a substrate-type solar cell.

In general, a thin film solar cell uses a glass substrate, but research and development on a thin film solar cell using a flexible substrate capable of reducing weight, workability, and mass productivity have been actively conducted.

An apparatus for manufacturing a thin film solar cell using a conventional flexible substrate, the apparatus for processing a flexible substrate includes a feeding roller provided in an accommodating chamber, a plurality of process chambers provided between the take-up roller and the deposition chamber, And a partitioning chamber provided between the partitioning chambers.

A high-pressure inert gas is supplied to the compartment chamber, and the pressure thereof is stronger than the gas pressure inside the deposition chamber. Thus, the process gases of one deposition chamber can not enter the partition chamber.

Thus, isolation between process chambers is possible.

At this time, the substrate is flatly passed through the chamber without any movement. In this case, the substrate may be pulled down by gravity, and the tension may be damaged.

In order to prevent this, a tension roller is disposed in the partition chamber so that the tension of the substrate can be maintained.

However, in such a case, the roller contacts with the flexible substrate, thereby causing a problem that the deposited layer deposited on the substrate may be damaged.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a flexible substrate processing apparatus capable of maintaining the tension of a flexible substrate in a partition chamber without damaging the deposition layer of the flexible substrate .

To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, there is provided a plasma processing apparatus comprising: a plurality of process chambers; A partition plate provided between the process chambers to partition between process chambers; and a gas ejecting gas having a predetermined pressure to maintain the tension of the flexible substrate moving on the upper and lower surfaces of the flexible substrate, And a spraying device.

The gas injector includes a body portion having an outer surface and a plurality of spray holes formed on an outer surface thereof, a guide passage for guiding the inflow of gas into the body portion, and a guide passage for connecting the guide passage to the spray hole, And may include a plurality of injection paths for guiding the alone gas.

The injection path may be formed at regular intervals along the circumferential direction of the body portion.

The diameter of the guide passage may decrease from both end portions of the body portion toward the center direction.

The diameter of the injection path may increase from both ends of the body portion toward the center.

The body may rotate to correspond to a traveling direction of the flexible substrate being conveyed about the guide passage.

The gas ejection apparatus includes a first gas ejection device disposed at an upper portion of a path through which the flexible substrate passes and ejecting a gas to an upper surface of the flexible substrate, a second gas ejection device disposed apart from the first gas ejection device, And a second gas ejection device disposed at a lower portion of the passing path to eject gas to the lower surface of the flexible substrate.

The height of the position at which the substrate is bent by the gas injected from the gas injector is different from the height of the position where the flexible substrate enters the partition chamber and the height of the outgoing position so that the tension of the flexible substrate can be maintained, Lt; / RTI >

According to the present invention as described above, it is possible to maintain the tension of the flexible substrate without using rollers that maintain the tension of the flexible substrate.

In other words, if there is a roller, the deposition rate of the flexible substrate is increased by the contact with the vapor deposition layer of the flexible substrate. The present invention can bend the substrate by the high pressure gas, thereby preventing physical damage to the deposition layer.

In addition, it is possible to smoothly and smoothly transfer the flexible substrate by injecting the high-pressure gas along the direction of conveyance of the flexible substrate by rotating the body portion, and even if the body portion and the flexible substrate come into contact with each other, Can be implemented.

On the other hand, by providing the gas ejecting portions at the upper and lower portions of the partitioning chamber, gas pressure inside the partitioning chamber can be made uniform while maintaining the tension of the substrate.

1 is a side cross-sectional view of a flexible substrate processing apparatus according to the present invention.
2 is a perspective view of a gas injection unit according to the present invention.
3 is a cross-sectional view of the gas injection unit according to the present invention.
4 is a plan sectional view of the gas injection unit according to the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. However, it is to be understood that the present invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It is intended that the disclosure of the present invention be limited only by the terms of the appended claims.

Also, terms used herein are for the purpose of illustrating embodiments and are not intended to limit the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. &Quot; comprises "and / or" comprising "used in the specification do not exclude the presence or addition of components other than the components mentioned. Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1, the flexible substrate processing apparatus 1 according to the present invention includes an outer chamber 2, a feeding roller 3 located in the outer chamber 2 to supply a flexible substrate, And a winding roller 4 for recovering the completed flexible board.

Between the feeding roller 3 and the winding roller 4, a plurality of process chambers 10a, 10b, 10c are provided in series.

The process chambers 10a, 10b and 10c are spaced apart from each other.

The process chambers 10a, 10b, and 10c are provided with injectors 11a, 11b, and 11c that supply different process gases, respectively.

The belts 12a, 12b and 12c are provided underneath the injectors 11a, 11b and 11c to move the flexible substrate S and the belts 12a, 12b and 12c are driven by the main rollers 13a, 13b and 13c, And the driven rollers 14a, 14b and 14c while moving the flexible substrate S in the direction of the winding roller 4. [

Inside each of the belts 12a, 12b, and 12c, heaters 15a, 15b, and 15c are provided to apply heat to the flexible substrate S that undergoes the deposition process.

On the other hand, pumping devices 16a, 16b and 16c for discharging gas to the outside are provided in the respective process chambers 10a, 10b and 10c.

Each of the process chambers 10a, 10b, and 10c are spaced apart from each other, and a partition chamber 20 is provided therebetween.

The role of the compartment chamber 20 is to prevent gas from being mixed between the process chambers 10a, 10b, 10c

The partition chamber 20 is provided with a gas injection device 30 for maintaining the tension of the flexible substrate S in a bending state without contacting the flexible substrate S.

The gas injector 30 includes a first gas injector 31 and a second gas injector 32 which are mutually spaced apart.

When the high-pressure inert gas is supplied from the first gas injection device 31 and the second gas injection device 32 in a state where the flexible substrate S passes through the flexible substrate S, the flexible substrate S is bent do.

It is preferable that the flexible substrate S is bent at a position lower than or higher than the position where the substrate is inserted and the position where the flexible substrate S is bent.

The first gas injector 31 and the second gas injector 32 are provided with a gas supply device 40 for supplying a high-pressure inert gas.

As shown in Fig. 2, a first gas supply pipe 41 connected from the upper side is provided at both ends of the first gas injection device 31, and a first gas supply pipe 41 connected from the lower side to both ends of the second gas injection device 32 A first gas supply pipe 42 is provided. The first gas supply pipe 41 and the second gas supply pipe 42 are integrally connected to each other on the upper side or the lower side to connect the first gas injection device 31 and the second gas injection device 32 in parallel .

On the outer circumferential surfaces of the first gas injector 31 and the second gas injector 32, jet holes 131 and 132 are provided for discharging the gas.

The first gas injection device 31 and the second gas injection device 32 are provided with guide flow paths 231 and 232 for guiding the gases supplied from the first gas supply pipe 41 and the second gas supply pipe 42, 232 are provided.

Accordingly, the high-pressure gas supplied along the guide paths 231 and 232 is injected to the outside by the injection holes 131 and 132 to apply pressure to the flexible substrate S.

Therefore, physical damages of the deposition layer can be prevented through the high-pressure gas in the state where the upper portion of the substrate S is deposited, and tension can be maintained in the bending state.

The first gas injection device 31 and the second gas injection device 32 are configured to be rotatable on the first gas supply pipe 41 and the second gas supply pipe 42 or around the guide passage .

At this time, the first gas injector 31 and the second gas injector 32 are preferably rotated so as to inject gas of high pressure corresponding to the traveling direction of the flexible substrate S.

Further, the rotation of the first gas injector 31 and the second gas injector 32 is rotated by a separate drive unit (not shown) to inject a high-pressure gas in the advancing direction of the flexible substrate S Alternatively, the injecting direction of the injection holes 131 and 132 may be structurally changed so as to be rotatable without a separate driving unit.

The first gas ejecting apparatus 31 and the second gas ejecting apparatus 32 are rotated in the same direction corresponding to the advancing direction of the flexible substrate S or the direction of gas ejection is detected by the flexible substrate S, It is possible to maintain the tension of the flexible substrate S and at the same time to make the movement of the flexible substrate S more smooth.

In addition, when the rotational direction of the first gas injector 31 and the second gas injector 32 is the same as the moving direction and the moving speed of the flexible board S, the first gas injector 31 and the second gas injector 32 are in contact with each other while the movable substrate S is in contact with the movable substrate S, the defective rate can be minimized.

It is needless to say that a high pressure gas can be injected to maintain the tension of the flexible substrate S even in a state where the first gas injector 31 and the second gas injector 32 are fixed without rotating .

As shown in FIG. 3, the first gas injection device 31 and the second gas injection device 32 are provided with injection flow paths 331 and 332 for connecting the injection holes 131 and 132 and the guide flow paths 231 and 232 ).

The injection paths 331 and 332 have a cross-sectional shape and a radially extending structure formed at a uniform angle from the center.

It is needless to say that the number of the injection paths 331 and 332 can be changed so that the injection paths 331 and 332 can continuously inject gas at a uniform pressure more than at the upper and lower sides of the moving substrate.

Fig. 4 shows the shapes of the first gas injection device 31 and the second gas injection device 32 of various forms.

The first gas injector 31 and the second gas injector 32 each have a body portion 431 432 having a plurality of injection holes 131 (132) on the outer circumferential surface thereof, a body portion 431 A guide passage 231 (232) for guiding the inflow of the gas into the injection hole 131 (132) and the guide passage 231 (232) and the injection hole 131 (132) 132) for guiding the gas.

Although not shown, the body portion 431 (432) is coupled to be rotatable about the guide passage 231 (232). At this time, the body portion 431 (432) rotates along the feeding direction of the flexible substrate S. It is also preferable to rotate so as to correspond to the feeding direction or speed of the flexible substrate S. For example, the rotational direction of the body portion 431 (432) means a direction which does not interfere with the conveying direction or the proceeding direction of the flexible board S even when the flexible board S contacts with the flexible board S.

Needless to say, the body portion 431 (432) can inject gas at a high pressure so that the tension of the flexible substrate S can be maintained even without rotation.

4A shows the most general form. The diameter of the guide passage 231 (232) formed in the body portion 431 (432) is constant from the outer periphery to the center and the diameter of the injection passage 331 (332) And the diameters and intervals of the injection holes 131 (132) are uniform.

This corresponds to the case where the pressure of the gas supplied into the guide passage 231 (232) is sufficiently secured and the gas pressure from both ends of the body portion 431 (432) to the center portion is uniformly provided Should be able to.

4 (b) is a modification of FIG. 4 (a). The diameter of the guide passage 231 (232) formed in the body portion 431 (432) is smaller than the diameter of the body portion 431 To the inner center direction.

This is because the pressure of the supplied gas increases as the diameter of the center of the body portion 431 (432) decreases, and the flow velocity of the gas increases, The pressure of the gas injected from the injection path formed adjacent to both ends of the body portion 431 (432) and the body portion 331 (332) is made uniform.

That is, since the diameter of the guide passage 231 (232) is lower than the pressure of the gas discharged from the outer periphery, the injection pressure of the gas at the center portion may be lowered. Therefore, in order to solve the local gradient of the gas pressure, Respectively.

The higher the injection speed, the greater the pressure applied to the substrate.

This is the case when the pressure of the gas supplied to the inside of the guide passage 231 (232) is not sufficient. When the pressure of the gas decreases from both ends of the body portion 431 (432) If the guide passage 231 (232) is designed to have such a shape, the gas pressure can be uniformly provided throughout the guide passage 231 (232).

4 (c), the diameter of the guide passage 231 (232) is constant from the outer periphery to the center, and the diameter and spacing of the injection passage 331 (332) and the diameter of the injection hole 131 (132) Is increased from both ends of the body portion 431 (432) toward the center direction.

This provides an effect similar to that of Fig. 4 (b). The amount of gas injected from the central portion of the body portion 431 (432) may be less than the amount of gas supplied from both ends of the body portion 431 (432).

As a result, the gas pressure can be reduced on the guide passage 231 (232) from both ends of the body portion 431 (432) to the inner center direction. Thus, 332 are increased from both ends of the body portion 431 (432) toward the center of the inner periphery of the body portion 431 (432) so that gas pressure can be uniformly provided throughout the injection path 331 (332).

Hereinafter, the operation of the present invention will be described with reference to FIGS. 1 to 4. FIG.

As shown in Fig. 1, when the deposition process for the flexible substrate S is started, the winding roller 4 rotates, and accordingly the feeding roller 3 rotates, The substrate S moves.

Process gases are injected from the injectors 11a, 11b, and 11c, and the heaters 12a, 12b, and 12c are heated to deposit the flexible substrate (S) semiconductor layer.

At this time, because there are different process gases in the process chambers 10a, 10b, and 10c, it is necessary to prevent them from being mixed with each other.

To this end, the compartment chamber 20 must be maintained at a higher pressure than the inside of the process chambers 10a, 10b, 10c and the tension of the flexible substrate S in the compartment chamber 20 must be maintained.

The flexible substrate S passes between the first gas injection device 31 and the second gas injection device 32 and the high pressure gas in the first gas injection device 31 and the second gas injection device 32 The flexible substrate S is bent.

That is, the gas of the first gas ejector 31 presses the upper surface of the flexible substrate S, and the second gas ejector 32 presses the lower surface of the flexible substrate S.

The first gas ejection device 31 performs the main function of pressing and bending the actual flexible substrate S while the second gas ejection device 32 supplies gas to the bottom surface of the flexible substrate S So that the pressure in the lower portion of the inner space of the compartment chamber 20 becomes equal to the pressure in the upper space in which the first gas ejector 31 is located.

Therefore, even if the flexible substrate S is not in direct contact with other physical structures that maintain the tension, the tension is maintained because the flexible substrate S is bent by the pressure of the gas.

In addition, since it does not touch the physical structure (e.g., the roller), it is possible to prevent the deposition layer from being damaged.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be appreciated that one embodiment is possible. Accordingly, the true scope of the present invention should be determined by the technical idea of the claims.

20: compartment chamber 30: gas injection part
31: first gas injection part 32: second gas injection part
131, 132: injection holes 231, 232:
331, 332:

Claims (8)

A plurality of process chambers in which a flexible substrate is deposited and spaced apart from each other;
A compartment chamber provided between the process chambers and partitioning between the process chambers, and
A gas ejection device for ejecting a gas having a predetermined pressure to the upper surface and the lower surface of the flexible substrate so that the flexible substrate moving in the partition chamber maintains the tension;
Wherein the flexible substrate processing apparatus comprises: The method according to claim 1,
The gas ejection apparatus includes:
A body portion having an outer surface and provided with a plurality of spray holes on its outer surface,
A guide passage for guiding the inflow of the gas into the body portion,
And a plurality of injection paths connecting the guide passage and the injection hole to guide the gas to the injection hole. The method of claim 2,
Wherein the injection path is formed at regular intervals along a circumferential direction of the body portion. The method of claim 2,
The guide passage
Wherein the diameter of the flexible body is reduced from both ends of the body toward the center. The method of claim 2,
The diameter of the injection path
And wherein the distance from both ends of the body part increases toward the center direction. The method of claim 2,
The body portion
Wherein the flexible substrate processing apparatus rotates so as to correspond to a traveling direction of the flexible substrate being conveyed about the guide passage. The method according to claim 1,
The gas ejection apparatus includes:
A first gas ejection device arranged at an upper portion of a path through which the flexible substrate passes, for ejecting gas onto an upper surface of the flexible substrate;
And a second gas ejection apparatus spaced apart from the first gas ejection apparatus and disposed at a lower portion of a path through which the flexible substrate passes, for ejecting gas to the lower surface of the flexible substrate Device. The method according to claim 1,
In order to maintain the tension of the flexible substrate,
Wherein a height of a position at which the substrate is bent by the gas injected from the gas ejection apparatus is arranged at a height different from a height of a position where the flexible substrate enters the partitioning chamber and a height of the exit position of the flexible substrate, Device.

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