KR20180133154A - Composition for forming silica layer, method for manufacturing silica layer, and silica layer - Google Patents

Abstract

A composition for forming a silica film, which comprises a silicon-containing polymer, a radical inhibitor, and a solvent, wherein the total content of radical inhibitor components present in the silica film-forming composition is from 10 ppm to 1,000 ppm .

Description

TECHNICAL FIELD The present invention relates to a composition for forming a silica film, a method for producing a silica film, and a silica film,

The present disclosure relates to a composition for forming a silica film, a method for producing a silica film, and a silica film produced thereby.

In a flat panel display device, a thin film transistor (TFT) including a gate electrode, a source electrode, a drain electrode, and a semiconductor is used as a switching element, and a gate line for transmitting a scanning signal for controlling the thin film transistor And a data line for transmitting a signal to be applied to the pixel electrode are provided in the flat panel display. In addition, an insulating film for separating the semiconductor and the various electrodes is formed. The insulating film may be a silica film containing a silicon component.

Generally, the silica film is prepared by forming a coating film using polysilazane, polysiloxazane, or a mixture thereof, and converting it into an oxide film. In order to obtain a uniform oxide film, a silica film is used to reduce defects .

It is important to control the carbon impurity content in the composition because such defects can occur due to the carbon impurities present in the composition for forming a silica film.

One embodiment provides a composition for forming a silica film capable of forming a uniform film quality with a low carbon impurity content.

Another embodiment provides a silica film comprising a silica component formed by curing the composition for forming a silica film.

Another embodiment provides an electronic device comprising the silica film.

According to one embodiment, there is provided a composition for forming a silica film, comprising a silicon-containing polymer, a radical inhibitor, and a solvent, wherein the total content of radical inhibitor components present in the silica film-forming composition is from 10 ppm to 1,000 ppm Gt; a < / RTI >

The radical inhibitor may be a phenolic radical inhibitor.

The phenolic radical inhibitor is selected from the group consisting of 2-6-Di-t-butyl-4-methylphenol, 2-t-butyl- -tert-butyl-4-hydroxyanisole, 4-methoxyphenol, or combinations thereof.

The total content of radical inhibitor components present in the composition for forming a silica film may be from 10 ppm to 500 ppm.

The silicon-containing polymer may include polysilazane, polysiloxazane, or a combination thereof.

The silicon-containing polymer may have a weight average molecular weight of 1,000 to 100,000.

The solvent is selected from the group consisting of benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydronaphthalene, dipentene, pentane, hexane, heptane, At least one selected from the group consisting of ethyl cyclohexane, methyl cyclohexane, cyclohexane, cyclohexene, p-menthane, dipropyl ether, dibutyl ether, anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, . ≪ / RTI >

The silicon-containing polymer may be contained in an amount of 0.1 to 30% by weight based on the total amount of the composition for forming a silica film.

According to another embodiment, there is provided a silica film containing a silica component obtained by curing the aforementioned composition for forming a silica film.

According to another embodiment, there is provided an electronic device comprising the silica film described above.

The composition for forming a silica film according to an embodiment contains a radical inhibitor and the radical inhibitor in the total composition for forming a silica film is contained in an amount of 10 ppm to 1,000 ppm. The silica film produced using such a composition for forming a silica film can reduce the occurrence of defects and can have a uniform film quality.

The embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Unless otherwise defined herein, 'substituted' means that a hydrogen atom in the compound is replaced by a halogen atom (F, Br, Cl, or I), a hydroxy group, an alkoxy group, a nitro group, a cyano group, A thio group, an ester group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid or a salt thereof, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a cyano group, A C 1 to C 30 arylalkyl group, a C 7 to C 30 arylalkyl group, a C 1 to C 30 alkoxy group, a C 1 to C 20 heteroalkyl group, a C 2 to C 20 heteroaryl group, a C 3 to C 20 heteroarylalkyl group, a C 3 to C 30 cycloalkyl group, C3 to C15 monocyclic alkenyl groups, C6 to C15 cycloalkynyl groups, C2 to C30 heterocycloalkyl groups, and combinations thereof.

In addition, unless otherwise defined herein, "hetero" means containing 1 to 3 heteroatoms selected from N, O, S and P.

In the present specification, " * " means the same or different atom or part connected to a chemical formula.

Hereinafter, the composition for forming a silica film according to one embodiment of the present invention will be described.

The composition for forming a silica film according to one embodiment comprises a silicon-containing polymer, a radical inhibitor, and a solvent, wherein the total content of radical inhibitor components present in the overall composition is from 10 ppm to 1,000 ppm.

Generally, silicon-containing polymers have high reactivity and can form Si-O bonds by causing a rapid reaction with water, for example. The silicon-containing polymer can easily react with various compounds having organic functional groups in addition to moisture, and can also react with compounds such as alcohols, amines, aldehydes and the like. For this reason, the solvents in the composition for forming a silica film generally use an aliphatic compound, an aromatic compound or an ether compound having a relatively low reactivity.

However, reactive carbon impurities may also be present in these solvents, which can combine with the silicon containing polymer to increase the carbon content remaining in the composition.

Further, even when the reactive carbon impurity is not present in the solvent, the carbon impurities may be introduced into the film material through various environments during the production of the silica film. Particularly, when the silica film is formed, the composition is subjected to a process of curing at a high temperature. In this process, carbon impurities are easily introduced.

The composition for forming a silica film according to one embodiment can reduce the content of carbon impurities in the composition by controlling the content of the radical inhibitor component contained in the whole composition to 10 ppm to 1,000 ppm and furthermore, .

Here, the radical inhibitor component present in the whole composition may be added as a component in the preparation of the composition for forming a silica film or may be derived from a solvent component of the composition for forming a silica film.

The 'radical inhibitor' includes all substances that stabilize the composition by reacting with a radical generated during the preparation of a silica film or silica film forming composition. These radical inhibitors release their own hydrogen to stabilize the radicals and themselves to radicals, which remain in a stable form through resonance effects or rearrangement of electrons.

The radical inhibitor may comprise a phenolic material and an aromatic amine material, and in one embodiment the radical inhibitor may be, for example, a phenolic radical inhibitor.

The radical inhibitor may be, for example, phenol, bisphenol or the like, and specifically includes 2-6-Di-t-butyl-4-methylphenol, 2-t- 2-tert-butyl-4-hydroxyanisole, 4-methoxyphenol. Or a combination thereof.

For example, the total content of the radical inhibitor component present in the composition for forming a silica film may be 10 ppm to 900 ppm, more specifically 10 ppm to 500 ppm, 10 ppm to 200 ppm, 10 ppm to 100 ppm, 10 ppm to 80 ppm, 10 ppm to 50 ppm , Or from 10 ppm to 20 ppm, but is not limited thereto.

The composition for forming a silica film according to an embodiment includes a radical inhibitor and the content of the radical inhibitor component present in the entire silica film forming composition is controlled to a predetermined range to reduce the content of carbon impurities, (E.g., void or hole defect occurrence) can be controlled.

Hereinafter, the silicon-containing polymer contained in the composition for forming a silica film will be described.

The silicon-containing polymer includes polysilazane, polysiloxazane, or a combination thereof, and may have a weight average molecular weight of, for example, 1,000 to 100,000.

The silicon-containing polymer may include, for example, a moiety represented by the following formula (A).

(A)

In Formula (A), R ₁ to R ₃ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group , a substituted or unsubstituted C6 to C30 aryl A substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group , A substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof,

The " * " means a connection point.

For example, the silicon-containing polymer may be a polysilazane produced by reacting a halosilane with ammonia.

For example, the silicon-containing polymer contained in the composition for forming a silica film may further include a moiety represented by the following formula (B) in addition to the moiety represented by the formula (A).

[Chemical Formula B]

R ₄ to R ₇ in Formula B are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group , A substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, A substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof,

The " * " means a connection point.

In this case, the silicon-containing polymer includes a silicon-oxygen-silicon (Si-O-Si) bonding moiety in addition to a silicon-nitrogen (Si- -Si) bond portion relaxes stress during curing by heat treatment and can reduce shrinkage.

For example, the silicon-containing polymer may further include a moiety represented by the formula (A), a moiety represented by the formula (B), and further represented by the following formula (C).

≪ RTI ID = 0.0 &

The moiety represented by the above formula (C) is a structure in which the terminal portion is capped with hydrogen, which may be contained in the polysilazane or polysiloxane structure in an amount of 15 to 35% by weight based on the total amount of Si-H bonds. When the portion of Formula 3 is included in the polysilazane or polysiloxane structure within the above range, the SiH ₃ portion is prevented from being scattered due to SiH ₄ during the heat treatment, thereby preventing the shrinkage, Cracks can be prevented from occurring.

For example, the silicon-containing polymer may be contained in an amount of 0.1 wt% to 30 wt% with respect to the composition for forming a silica film.

The solvent contained in the composition for forming a silica film is not particularly limited as long as it is a solvent capable of dissolving the silicon-containing polymer. Specific examples thereof include benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, But are not limited to, cyclohexane, cyclohexane, decahydronaphthalene, dipentene, pentane, hexane, heptane, octane, nonane, decane, ethylcyclohexane, methylcyclohexane, cyclohexane, cyclohexene, And may include at least one member selected from the group consisting of ether, anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, and combinations thereof.

Meanwhile, the composition for forming a silica film may further include a thermal acid generator (TAG).

The thermal acid generator is an additive for improving the developability of the composition for forming a silica film, so that the polymer contained in the composition can be developed at a relatively low temperature.

The thermal acid generator is not particularly limited as long as it is a compound capable of generating acid (H ⁺ ) by heat, but it can be activated at 90 DEG C or higher to generate sufficient acid and have low volatility.

The thermal acid generators may be selected from, for example, nitrobenzyl tosylate, nitrobenzyl benzene sulfonate, phenol sulfonate, and combinations thereof.

The thermal acid generator may be contained in an amount of 0.01 to 25% by weight based on the total amount of the composition for forming a silica film. When the thermal acid generator is included in the range, the polymer can be developed at a relatively low temperature and the coating property can be improved .

The composition for forming a silica film may further comprise a surfactant.

The surfactant is not particularly limited, and examples thereof include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether and polyoxyethylene oleyl ether, polyoxyethylene nonylphenol ether And polyoxyethylene alkyl allyl ethers such as polyoxyethylene alkyl allyl ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, polyoxyethylene sorbitol Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate; polyoxyethylene sorbitan fatty acid esters such as Flax EF301, EF303 and EF352 Manufactured by Dainippon Ink and Chemicals, Inc.), Megafac F171 and F173 (manufactured by Dainippon Ink and Chemicals, Inc.), Prorad FC430 and FC431 (manufactured by Sumitomo 3M Ltd.) Fluorine surfactants such as Asahi Guard AG710, SHAPRON S-382, SC101, SC102, SC103, SC104, SC105 and SC106 (manufactured by Asahi Kasei Corporation), organosiloxane polymer KP341 (Shinetsu Kagaku Kogyo Co., Ltd.) and other silicone surfactants.

The surfactant may be included in an amount of 0.001 to 10% by weight based on the total amount of the composition for forming a silica film. When the surfactant is included in the above range, the dispersibility of the solution can be improved and the uniformity of the film thickness can be increased.

According to another embodiment, the method may include coating the composition for forming a silica film described above, drying the substrate to which the composition for forming a silica film is applied, and curing the composition for forming a silica film .

The composition for forming a silica film can be applied by a solution process, and can be applied by a method such as spin-on coating, slit coating, inkjet printing or the like.

The substrate may be, for example, a device substrate such as semiconductor or liquid crystal, but is not limited thereto.

When the application of the composition for forming a silica film is completed, the substrate is then dried and cured. The drying and curing step may be performed at a temperature of, for example, about 100 캜 or higher and may be performed by applying energy such as heat, ultraviolet rays, microwaves, sonic waves, or ultrasonic waves.

For example, the drying may be performed at about 100 ° C to about 200 ° C, and the solvent in the composition for forming a silica film may be removed through the drying step. Further, the curing may proceed at about 250 ° C to 1,000 ° C, and the composition for forming a silica film may be converted into a thin film of an oxide film by passing through the curing step. The curing may be performed by, for example, primary curing in a steam atmosphere at 250 ° C to 1,000 ° C, followed by secondary curing in a nitrogen atmosphere at 600 ° C to 1,000 ° C.

According to another embodiment of the present invention, there is provided a silica film containing a silica component obtained by curing the aforementioned composition for forming a silica film.

The silica film may be, for example, an insulating film, a separation film, a hard coating film, or the like, but is not limited thereto.

An electronic device comprising the silica film of the present invention is provided. The electronic device may be a display device such as an LCD or an LED, or a semiconductor device.

Hereinafter, embodiments of the present invention will be described in detail with reference to embodiments. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

Preparation of composition for silica film formation

Comparative Example 1

A stirrer having a capacity of 3 L and a reactor equipped with a temperature control device were replaced with dry nitrogen. And put into a 1,500 g pyridine reactor, which was maintained at 0 ° C. Subsequently, 100 g of dichlorosilane was slowly added over 1 hour. 70 g of ammonia was slowly added thereto over 3 hours. Next, dry nitrogen was injected for 120 minutes to remove ammonia remaining in the reactor. The resulting white slurry product was filtered through a 1 mu m teflon filter in a dry nitrogen atmosphere to obtain 1,000 g of a filtrate. 1,000 g of xylene was added thereto, and the operation of replacing the solvent with xylene in pyridine using a rotary evaporator was repeated three times in total to adjust the solid concentration to 20% by weight, followed by pore size 0.03 Lt; / RTI > filtered through a Teflon filter.

300 g of pyridine was added to the filtered solution and heated to 100 캜 to obtain a polysilazane having a weight average molecular weight of 5,200. Thereafter, the obtained polysilazane was substituted with a xylene solvent by using a rotary evaporator to prepare a composition for forming a silica film having a solid content of 15 ± 0.1 wt%.

The weight average molecular weight of the polysilazane in the present specification was measured using a Waters GPC (PLC Pump 1515, RI Detector 2414).

Comparative Example 2

The inside of the reactor equipped with the stirrer and the temperature controller of 3 L capacity was replaced with dry nitrogen. And 1,500 g of pyridine were charged into the reactor and maintained at 0 캜. Then, 2-6-Di-t-butyl-4-methylphenol is added to the reactor and the reactor is stirred for 30 minutes. The amount of the added 2-6-Di-t-butyl-4-methylphenol added is 1,100 ppm of the final silica film-forming composition to be prepared. Then, 100 g of dichlorosilane was slowly injected over one hour. 70 g of ammonia was slowly added thereto over 3 hours. Next, dry nitrogen was injected for 120 minutes to remove ammonia remaining in the reactor. The resulting white slurry product was filtered through a 1 mu m teflon filter in a dry nitrogen atmosphere to obtain 1,000 g of a filtrate. 1,000 g of xylene was added thereto, and the operation of replacing the solvent with xylene in pyridine using a rotary evaporator was repeated three times in total to adjust the solid concentration to 20% by weight, followed by pore size 0.03 Lt; / RTI > filtered through a Teflon filter.

To the filtered solution was added 300 g of pyridine and heated to 100 캜. The above procedure was followed to obtain polysilazane having a weight average molecular weight of 5,200. Thereafter, the obtained polysilazane was substituted with a xylene solvent by using a rotary evaporator to prepare a composition for forming a silica film having a solid content of 15 ± 0.1 wt%.

The weight average molecular weight of the polysilazane in the present specification was measured using a Waters GPC (PLC Pump 1515, RI Detector 2414).

The content of 2-6-Di-t-butyl-4-methylphenol in the total composition for forming a silica film was 1,100 ppm.

Comparative Example 3

Except that the content of the 2-6-Di-t-butyl-4-methylphenol component in the composition for forming a total silica film in Comparative Example 2 was 2,000 ppm Was prepared in the same manner as in Comparative Example 2 to prepare a composition for forming a silica film.

Example 1

Except that the content of 2-6-Di-t-butyl-4-methylphenol in the composition for forming a total silica film in Comparative Example 2 was 10 ppm A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 2

Except that the content of the component 2-6-di-t-butyl-4-methylphenol in the total silica film-forming composition was 50 ppm in Comparative Example 2 A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 3

2-6-Di-t-butyl-4-methylphenol was added to the silica film-forming composition prepared in the same manner as in Comparative Example 1. The content of the 2-6-Di-t-butyl-4-methylphenol component in the total composition for forming a silica film was 50 ppm.

Example 4

Except that the content of the component of 2-6-di-t-butyl-4-methylphenol in the composition for forming a total silica film in Comparative Example 2 was 100 ppm A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 5

Except that the content of the component of 2-6-di-t-butyl-4-methylphenol in the composition for forming a total silica film in Comparative Example 2 was 500 ppm A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 6

Except that the content of the component of 2-6-di-t-butyl-4-methylphenol in the composition for forming a total silica film in Comparative Example 2 was 900 ppm A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 7

In Comparative Example 2, 2-tert-butyl-4-hydroxyanisole (2-tert-butyl-4-methylphenol) was used instead of 2-6- -butyl-4-hydroxyanisole) was used as the initiator in the preparation of the silica film.

The content of the 2-tert-butyl-4-hydroxyanisole component in the total composition for forming a silica film was 50 ppm.

Example 8

Except that 4-methoxyphenol was used instead of 2-6-di-t-butyl-4-methylphenol in Comparative Example 2 A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

The content of the 4-methoxyphenol component in the total composition for forming a silica film was 50 ppm.

Evaluation 1: Determination of carbon impurity content

The carbon impurity content of the composition for forming a silica film according to Comparative Examples 1 to 3 and Examples 1 to 8 was measured.

[How to measure]

3cc each of the compositions for forming a silica film according to Comparative Examples 1 to 3 and Examples 1 to 8 were taken and dispensed in a center portion of a silicon wafer having a diameter of 8 inches by using a spin coater (MIKASA, MS-A200) rpm for 20 seconds. Thereafter, soft baking was carried out at 150 ° C for 3 minutes, followed by a high-temperature oxidation reaction to convert the oxide film to 800 ° C. The carbon content in the oxide film was then analyzed using a secondary ion mass spectrometer (CAMECA, IMS-6F).

The results are shown in Table 1 below.

Evaluation 2: Measurement of void defects of thin films

The silica film forming compositions according to Comparative Examples 1 to 3 and Examples 1 to 8 were dispensed in 3 ml of the nozzle tip of a spinner and spin-coated on a central portion of a silicon wafer having a diameter of 8 inches by a spin coater (MS- A200) at 1,500 rpm. Subsequently, the coated thin film was prebaked at 150 캜. Subsequently, curing was carried out at 300 캜 using a furnace for supplying water vapor to convert the film quality to an oxide film quality. Thereafter, the oxide film formed by the etching process was removed by 1,000 angstroms or more, and then a defect inspection (KLA Surf Scan SP-1) was used to measure the void defects void defect) were measured.

The results are shown in Table 1 below.

* Void defect evaluation criteria

(Defect evaluation standard according to the number of defects having a diameter of 0.2 mu m or more)

Very good: less than 100

Good: 100 to 300

Bad: More than 300 but less than 600

Very bad: over 600

Radical inhibitor Within the composition
Radical inhibitor
Total Content (ppm) Within the composition
Carbon impurity content (atoms / cm ³ ) void defect Comparative Example 1 - - 2.56 x 10 ²⁰ Very bad Comparative Example 2 Di-t-butyl-4-methylphenol 1,100 6.73 x 10 ¹⁹ Bad Comparative Example 3 Di-t-butyl-4-methylphenol 2,000 7.81 × 10 ¹⁹ Bad Example 1 Di-t-butyl-4-methylphenol 10 3.10 x 10 ¹⁹ Very good Example 2 Di-t-butyl-4-methylphenol 50 2.53 x 10 ¹⁹ Very good Example 3 Di-t-butyl-4-methylphenol 50 4.12 x 10 ¹⁹ Good Example 4 Di-t-butyl-4-methylphenol 100 2.98 × 10 ¹⁹ Very good Example 5 Di-t-butyl-4-methylphenol 500 5.77 x 10 ¹⁹ Very good Example 6 Di-t-butyl-4-methylphenol 900 6.03 × 10 ¹⁹ Good Example 7 2-t-butyl-4-hydroxyanisole 50 4.33 × 10 ¹⁹ Good Example 8 4-methoxyphenol 50 5.25 x 10 ¹⁹ Good

Referring to Table 1 above, the compositions for forming a silica film according to Examples 1 to 8, in which the total content of the radical inhibitor is within a predetermined range in the composition, have a relatively small content of carbon impurities and are present in the thin film The number of void defects is relatively small.

However, it can be seen that the composition for forming a silica film according to Comparative Example 1 in which no radical inhibitor is added has a relatively large content of carbon impurities and a relatively large void defects in the thin film. The composition for forming a silica film according to Comparative Examples 2 and 3 in which the total content of the radical inhibitors present in the composition for forming a silica film does not satisfy the predetermined range does not have a relatively high carbon impurity content, The number of void defects is relatively large.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. And falls within the scope of the present invention.

Claims (10)

As a composition for forming a silica film,
Silicon-containing polymers,
Radical inhibitors, and
menstruum
Lt; / RTI >
The total content of the radical inhibitor component present in the composition for forming a silica film is 10 ppm to 1,000 ppm
Composition for forming a silica film. The method of claim 1,
Wherein the radical inhibitor is a phenolic radical inhibitor. 3. The method of claim 2,
The phenolic radical inhibitor is selected from the group consisting of 2-6-Di-t-butyl-4-methylphenol, 2-t-butyl- -tert-butyl-4-hydroxyanisole), 4-methoxyphenol, or a combination thereof. The method of claim 1,
Wherein the total content of radical inhibitor components present in the composition for forming a silica film is 10 ppm to 500 ppm. The method of claim 1,
Wherein the silicon-containing polymer comprises polysilazane, polysiloxazane, or a combination thereof. The method of claim 1,
Wherein the silicon-containing polymer has a weight average molecular weight of 1,000 to 100,000. The method of claim 1,
The solvent is selected from the group consisting of benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydronaphthalene, dipentene, pentane, hexane, heptane, At least one selected from the group consisting of ethyl cyclohexane, methyl cyclohexane, cyclohexane, cyclohexene, p-menthane, dipropyl ether, dibutyl ether, anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, Wherein the silica film forming composition comprises: The method of claim 1,
Wherein the silicon-containing polymer is contained in an amount of 0.1 to 30% by weight based on the total amount of the composition for forming a silica film. A silica film comprising a silica component obtained by curing the composition for forming a silica film according to any one of claims 1 to 8. An electronic device comprising the silica film according to claim 9.