KR20190029396A - Method for Forming Thin Film - Google Patents

Abstract

A thin film forming method is disclosed. The method for forming a thin film according to the present invention comprises the steps of adsorbing a source gas on a substrate, reacting the source gas adsorbed on the substrate with a reaction gas, and then generating plasma to remove impurities from the single atomic layer thin film formed on the substrate. Then, the film quality of the thin film may be improved in the height direction of the thin film, compared with a case where the atomic layer thin film having a thickness of several tens of A which has been processed several tens of times on the substrate is treated with plasma.

Description

{Method for Forming Thin Film}

The present invention relates to a thin film forming method capable of improving the film quality of a thin film.

A semiconductor device, a flat panel display device, or a solar cell may be a thin film deposition process for depositing a material necessary for a substrate such as a silicon wafer or glass to form a thin film, a method for exposing or hiding a selected region of thin films deposited using a photosensitive material A photolithography process, an etching process for forming a desired pattern by removing a thin film of a selected region, and the like.

In the thin film deposition process for forming a thin film on a substrate, a source gas and a reactive gas are injected to the substrate side, a thin film is deposited on the substrate by reaction of the source gas and the reactive gas, and plasma is generated if necessary.

Atomic layer deposition (ALD), which is one of the thin film deposition processes, may be performed in a space dividing plasma (SDP) deposition apparatus in which a space for processing substrates is divided.

In the conventional substrate processing apparatus and substrate processing method, a chamber is divided into a region where a source gas is injected and a region where a reactive gas is injected, and then a source gas, a purge gas, a reactive gas, a purge gas, And the thin film is deposited on the substrate.

Thereafter, a thin film having a thickness of several hundreds of A is completely deposited on the substrate, and then the thin film is treated with plasma.

Since the conventional substrate processing apparatus and substrate processing method as described above treats the thin film after completely forming the thin film on the substrate, the lower portion of the thin film can be relatively less plasma-treated than the upper portion of the thin film. This may reduce the removal of impurities in the thin film on the lower side.

It is an object of the present invention to provide a thin film forming method capable of solving all the problems of the prior art as described above.

It is another object of the present invention to provide a thin film forming method capable of improving the film quality of a thin film formed on a substrate.

In order to solve the above problems, the present invention may include the following configuration.

The thin film forming method according to the present invention is a method of forming a thin film on a substrate, comprising the steps of sequentially spraying a source gas, a first purge gas, a reactive gas and a second purge gas on the substrate to form a single atomic layer thin film ; And removing impurities of the single atomic layer thin film.

In the method of forming a thin film according to the present invention, the step of removing the impurities may be a step of removing impurities originating in the source gas or remaining in the single atomic layer thin film due to incomplete reaction of the source gas and the reactive gas have.

In the thin film forming method according to the present invention, the impurities may be at least one element selected from among carbon, chlorine, hydrogen, nitrogen, and fluorine, metal, dielectric, or a compound thereof.

In the method for forming a thin film according to the present invention, the step of removing the impurities may include removing at least one of ionized oxygen ions, ionized hydrogen ions, ionized nitrogen ions, ionized argon (Ar) ions, and ionized helium Can be used.

In the method of forming a thin film according to the present invention, the step of forming the single atomic layer thin film and the step of removing the impurity may be repeated in a single cycle.

In the thin film forming method according to the present invention, the time for removing the impurities may be 1/6 or less of the total time of the cycle.

In the thin film forming method according to the present invention, the time of the step of removing the impurities may be 1/8 or less of the total time of the cycle.

A thin film forming method according to the present invention is a method of forming a thin film on a substrate, comprising the steps of: forming a first sub cycle of a source gas, a first purge gas, a reactive gas and a second purge gas on the substrate, Thereby forming an atomic layer thin film having a thickness of several to several tens of A; Removing impurities of the atomic layer thin film; And repeating the cycle by cycling the step of forming the atomic layer thin film having a thickness of several to several tens of A and removing the impurity of the atomic layer thin film.

In the method of forming a thin film according to the present invention, the step of removing the impurities may be a step of removing impurities originating in the source gas or remaining in the single atomic layer thin film due to incomplete reaction of the source gas and the reactive gas have.

In the thin film forming method according to the present invention, the impurities may be at least one element selected from among carbon, chlorine, hydrogen, nitrogen, and fluorine, metal, dielectric, or a compound thereof.

In the method for forming a thin film according to the present invention, the step of removing the impurities may include removing at least one of ionized oxygen ions, ionized hydrogen ions, ionized nitrogen ions, ionized argon (Ar) ions, and ionized helium Can be used.

In the thin film forming method according to the present invention, the time for removing the impurities may be 1/6 or less of the total time of the cycle.

In the thin film forming method according to the present invention, the time of the step of removing the impurities may be 1/8 or less of the total time of the cycle.

A thin film forming method according to the present invention is a method of forming a thin film on a substrate, comprising the steps of: forming a first sub cycle of a source gas, a first purge gas, a reactive gas and a second purge gas on the substrate, Thereby forming an atomic layer thin film having a thickness of several to several tens of A; Oxidizing or nitriding the surface of the atomic layer thin film; And repeating the cycle by cycling the step of forming the atomic layer thin film having a thickness of several to several tens of A and the step of oxidizing or nitriding the surface of the atomic layer thin film.

In the thin film forming method according to the present invention, the oxidizing or nitriding step may use ionized oxygen ions or ionized nitrogen ions.

In the thin film forming method according to the present invention, the time of the oxidizing or nitriding step may be 1/6 or less of the total time of the cycle.

In the thin film forming method according to the present invention, the time of the step of removing the impurities may be 1/8 or less of the total time of the cycle.

A thin film forming method according to the present invention is a thin film forming method for forming a thin film on a substrate using a reaction between a source gas and a reactive gas injected from a space of a chamber provided with a substrate supporting part on which the substrate is supported and the RF power, A source step of injecting and adsorbing the source gas to the substrate; A reaction step of injecting the reaction gas and applying the RF power; The treatment for generating oxygen or hydrogen plasma in the space of the chamber can be performed in one process cycle.

The thin film forming method according to the present invention may include a purge step for injecting the purge gas after the source process or the reaction process.

The method of forming a thin film according to the present invention may include a purge step of injecting a purge gas after the treatment process.

In the thin film forming method according to the present invention, the treatment process can be performed at 1/6 or less of the time in one process cycle.

In the thin film forming method according to the present invention, the treatment process can be performed at 1/8 or less of the time in one process cycle.

In the thin film forming method according to the present invention, one of plasma, microwave, and ultraviolet rays may be used as a reaction process for applying the RF power by using RF power.

The method for forming a thin film according to the present embodiment includes the steps of forming a thin film by sequentially spraying a source gas, a first purge gas, a reactive gas, and a second purge gas on a substrate, and adding a step of removing impurities of the thin film formed on the substrate, The above process is continued in a continuous process to form a thin film. In this case, as compared with the case where the thin film is completely formed on the substrate and the thin film is treated with the plasma, the impurities of the thin film are uniformly removed in the height direction of the thin film to improve the film quality.

1 is a partially exploded perspective view of a thin film forming apparatus according to an embodiment of the present invention;
2 is a sectional view of 'A' in FIG. 1;
3 is a ALD 1 process cycle diagram according to the method of forming a thin film using plasma according to the present invention.
4 is a ALD 1 process cycle diagram according to the method of forming a thin film using a high temperature according to the present invention.

It should be noted that, in the specification of the present invention, the same reference numerals as in the drawings denote the same elements, but they are numbered as much as possible even if they are shown in different drawings.

Meanwhile, the meaning of the terms described in the present specification should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms.

It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one.

It should be understood that the term "and / or" includes all possible combinations from one or more related items. For example, the meaning of "first item, second item and / or third item" may include not only the first item, the second item or the third item but also two of the first item, Means a combination of all items that can be presented from the above.

It is to be understood that when an element is referred to as being "connected or installed" to another element, it may be directly connected or installed with the other element, although other elements may be present in between. On the other hand, when an element is referred to as being "directly connected or installed" to another element, it should be understood that there are no other elements in between. On the other hand, other expressions that describe the relationship between components, such as "between" and "between" or "neighboring to" and "directly adjacent to" should be interpreted as well.

In each step, the identification codes (for example, S100, S110, S120, etc.) are used for convenience of explanation, and the identification codes do not describe and explain the order of each step, Unless the order is described, it may happen differently from the stated order. That is, each step may occur in the same order as described, may be performed substantially concurrently, or may be performed in reverse order.

Hereinafter, a thin film forming apparatus and a thin film forming method according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a partially exploded perspective view of a thin film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of 'A' of FIG.

As shown in the figure, the thin film type growth unit according to an embodiment of the present invention may include a chamber 110, and a space in which a substrate S such as a silicon wafer, glass, .

The processing of the substrate S is a process of forming a thin film on the entire surface of the substrate S or forming a pattern such as metal wiring on the substrate S or forming a thin film on the substrate S Or changing the film quality of the outer surface of the formed film or changing the film quality inside the formed film.

The chamber 110 may include a main body 111 having an opened top surface and a lead 115 coupled to an open top end surface of the main body 111. The lower surface of the chamber 110 corresponds to the lower surface of the main body 111 and the upper surface of the chamber 110 corresponds to the lower surface of the lead 110. [ 115).

A substrate entrance port (not shown) may be formed on the side surface of the chamber 110 to carry the substrate S into the chamber 110 or to move the substrate S of the chamber 110 to the outside. A discharge port 111b may be formed on the lower surface of the chamber 110 for discharging gas containing foreign substances remaining in the chamber 110 after the substrate S is processed.

A substrate supporting part 120 on which the substrate S is mounted and supported may be installed on the inner bottom surface of the chamber 110. The upper end of the driving shaft 130 may be connected to the center of the lower surface of the substrate supporting part 120 and the lower end of the driving shaft 130 may protrude to the outside of the lower surface of the chamber 110. [ A drive unit (not shown) for rotating and lifting the drive shaft 130 may be connected to a portion of the drive shaft 130 located outside the lower surface of the chamber 110. Therefore, the substrate support 120 can be rotated and lifted by the drive shaft 130. [

A plurality of substrates S can be radially mounted on and supported by the substrate support 120 on the basis of the center of the substrate support 120 and a heater or the like for heating the substrate S can be mounted on the substrate support 120 Heating means (not shown) may be provided.

The substrate support 120 may be a susceptor or the like, and may rotate in a rotating manner with respect to the driving shaft 130. Therefore, when the substrate supporting portion 120 rotates, the substrate S can rotate in the form of revolving with respect to the driving shaft 130. [

In order to form a thin film on the substrate S, a process gas must be supplied to the chamber 110. The process gas may include a source gas and a reactive gas.

A source gas spraying part 140 and a reaction gas spraying part 150 for spraying a source gas and a reactive gas, respectively, may be provided on the upper surface of the chamber 110, respectively. The source gas injecting section 140 injects the source gas into the space of the first region 110a of the chamber 110 and the reactive gas injecting section 150 injects the reactive gas into the space of the second region 110b The source gas and the reaction gas can be uniformly supplied in the direction of the substrate S supported on the substrate supporting part 120 and rotated together with the substrate supporting part 120. At this time, the first region 110a and the second region 110b may be divided into spaces by a purge gas to be described later.

A purge gas spraying unit 170 for spraying a purge gas, which is an inert gas, toward the substrate supporting unit 120 may be installed on the upper surface of the chamber 110. [ The purge gas injector 170 injects purge gas between the first region 110a and the second region 110b and the third region 110c to form the purge gas injected into the first region 110a and the second region 110b, The third region 110c can be spatially divided and separated. Then, the gases in the respective regions are prevented from intermixing.

The substrate S rotates in the form of revolving around the center of the substrate support 120 so that the substrate S rotates to form the source gas injection unit 140 and the reaction gas injection unit 150 and the treatment unit It is preferable that the substrate S and the source gas injecting section 140 are opposed to each other and the substrate S and the reactive gas injecting section 150 are opposed to each other.

A source gas spraying part 140 and a reaction gas spraying part 150 facing the radial direction of the substrate supporting part 120 and a treatment gas spraying part 150 and a treatment gas spraying part 150 are provided so that the source gas and the reaction gas can be sprayed onto the entire surface of the substrate S, The length of the portion 180 may be longer or shorter than the diameter of the substrate S, respectively.

The source gas spraying part 140 of the first area 110a may be installed at a predetermined angle along the rotation direction of the substrate supporting part 120. [ That is, the source gas spraying part 140 is preferably disposed radially in the first region 110a with respect to the center of the substrate supporting part 120. [

The source gas spraying unit 140, the reaction gas spraying unit 150, and the treatment unit 180 may be arranged in a circulating and repeating manner alternating with each other. That is, in order of the source gas injecting section 140 → the purge gas injecting section 170 → the reaction gas injecting section 150 → the purge gas injecting section 170 → the treatment section 180 → the source gas injecting section 140 The process of arranging and repeating the process can be carried out in such a manner that the process is repeatedly repeated.

Thus, the source gas injecting section 140 can inject the source gas into the first region 110a of the chamber 110 to cause the source gas to be adsorbed to the substrate S, and the purge gas injecting section 170 can inject It is possible to remove the source gas unstably attracted to the substrate S by injecting gas. The reaction gas injector 150 injects the reaction gas into the second region 110b of the chamber 110 and reacts with the source gas adsorbed on the substrate S to deposit a thin film on the substrate S And the treatment section 180 can remove the impurities in the interior of the substrate S by spraying the treatment gas into the third area 110c of the chamber 110. [

When the substrate supporting portion 120 is rotated while the substrate S is mounted on the substrate supporting portion 120, the substrate S is sequentially positioned in the first region 110a to the second region 110b, A thin film is formed on the substrate S by the reaction of the gas and the reaction gas.

When forming a thin film, a thin film may be formed on the substrate S by spraying the reaction gas at a high temperature of 600 to 900 degrees, or may be formed by using a plasma at a low temperature of 200 to 400 degrees Celsius A thin film can be formed.

When the thin film is formed on the substrate S using only the reaction of the source gas and the reactive gas, the film quality of the film formed on the substrate S may be relatively decreased. Therefore, Can be removed. In order to remove carbon-based impurities in the thin film, oxygen (O 2) gas can be injected into the third region 110 c to remove impurities in the film with oxygen plasma. In order to remove chlorine (Cl) based impurities in the thin film, hydrogen (H2) gas may be injected into the third region 110c to remove impurities in the film with hydrogen plasma.

In order to further improve the film quality of the thin film according to the embodiment of the present invention, the source gas is adsorbed on the substrate S, the source gas adsorbed on the substrate S is reacted with the reaction gas, S can be treated with a thin film.

In addition, the density of the film quality of the thin film can be increased by using the plasma generated in the treatment section 180 on the substrate (s). Nitrogen (N 2) gas may be injected into the third region 110 c to increase the density of the thin film by nitrogen plasma, thereby reducing the thickness of the film.

For this purpose, a plasma generating unit 160 for generating plasma may be installed on the upper surface of the chamber 110 on the second region 110b.

More specifically, the source gas is injected toward the substrate S located in the first region 110a in a state where the substrate S is mounted on the substrate supporter 120. Then, the source gas is adsorbed on the substrate S. Thereafter, when the substrate supporting portion 120 rotates clockwise, the substrate S passes through the region where the purge gas is injected, so that the source gas not adsorbed to the substrate S can be removed by the purge gas.

In this state, when the substrate support 120 further rotates clockwise and the substrate S is positioned below the reaction gas injection part 150 of the second area 110b, the reaction gas is injected toward the substrate S side do. Then, since the source gas adsorbed on the substrate S and the reactive gas react with each other, a single atomic layer thin film can be formed on the substrate S.

The reaction gas injecting unit 150 may be divided into a first reaction gas injecting unit 151 and a second reaction gas injecting unit 155 spaced apart from each other by a predetermined angle along the rotation direction of the substrate supporting unit 120. The same reaction gas may be injected in the first reaction gas injection part 151 and the second reaction gas injection part 155, and different gases may be sequentially injected or selectively injected. The amount of reaction gas injected from the first reaction gas injection part 151 and the second reaction gas injection part 155 can be appropriately adjusted according to the characteristics of the thin film to be formed on the substrate S. [

The source gas injecting section 140 → the purge gas injecting section 170 → the reactive gas injecting section 150 → the plasma generating section 160 → the purge gas injecting section 150 → the reactive gas injecting section 150 → the plasma generating section 160 → the purge gas The spraying unit 170 and the treatment unit 180 may be performed in this order. The source gas spraying unit 140 → the purge gas spraying unit 170 → the reaction gas spraying unit 150 → the purge gas spraying unit 170, → the treatment section 180 in this order.

When the substrate supporting portion 120 further rotates clockwise in the second space 110b and the substrate S is positioned below the treatment portion 180 of the third space 110c, The single atomic layer thin film is treated by plasma according to the type of the treatment gas injected into the third space 110c to remove impurities. Hydrogen, oxygen, nitrogen, or the like may be injected as the impurity removing gas, that is, the treatment gas.

That is, since the step of removing the impurities after the step of forming the thin film on the substrate S is performed after the step of forming the thin film on the substrate S, the step of removing the impurities by the plasma with the thin film in the state after the thin film step is formed on the substrate S dozens of times The film quality of a cycle thin film can be improved.

Since the single atomic layer thin film deposited on the substrate S is subjected to a process step of removing impurities by the plasma, the impurity of the single atomic layer thin film deposited on the substrate S is completely removed, The film quality of the single atom layer thin film deposited on the substrate can be further improved.

A power supply unit 181 for applying a RF power or the like to the plasma generating unit 160 and a matcher 185 for matching the impedance may be installed outside the chamber 110. The power supply 181 may be grounded and grounded via the plasma generator 160.

The RF power may be one of plasma, microwave, and ultraviolet rays using RF power in a reaction process of applying RF power.

A method of forming a thin film according to an embodiment of the present invention will be described with reference to FIGS. 1 to 4. FIG.

As shown in the figure, the method of forming a thin film according to an embodiment of the present invention can load the substrate S into the chamber 110 and into the substrate support 120. That is, a plurality of substrates S can be carried into the chamber 110 and supported on the substrate support 120. The substrate S can be supported by the first region 110a (110a) as the substrate support 120 rotates clockwise ), The second area 110b, and the third area 110c.

In FIG. 3, a thin film forming method using plasma in the thin film forming method according to the present embodiment is shown as a pulse graph for convenience of explanation.

In order to form a thin film on the substrate S, a source gas may be injected from the source gas injecting portion 140 provided on the upper side of the chamber 110 to the substrate S side in the first region 110a. Then, the source gas can be adsorbed to the substrate S positioned in the first region 110a.

Thereafter, when the substrate support 120 further rotates clockwise, the substrate S passes through the area where the purge gas is injected between the first area 110a and the second area 110b, The source gas unstably adsorbed to the source gas is removed by the purge gas.

Thereafter, when the substrate supporting unit 120 further rotates clockwise, the substrate S sequentially passes through the second region 110b in which the reactive gas ejecting unit 150 is located. At this time, the plasma generating unit 160, A single atomic layer thin film may be deposited on the substrate S by the plasma generated in the substrate S. Thereafter, the third region 110c in which the treatment section 180 is located is sequentially passed, and the impurities existing inside the single atomic layer thin film are removed, so that the film quality can be improved.

The impurities may be at least one element selected from carbon, chlorine, hydrogen, nitrogen, and fluorine, metal, dielectric, or a compound thereof.

Alternatively, ionized oxygen ions or ionized hydrogen ions may be used to oxidize or nitrate the single atomic layer thin film. The time of the oxidizing or nitriding step may be less than 1/6 (6 Rods) or 1/8 (8 Rods) of the total cycle time.

The step of removing the impurities in the step of forming the single atom layer thin film may be repeated in a single cycle to repeat the cycle. The time of the step of removing impurities may be less than 1/6 (6 Rods) or 1/8 (8 Rods) of the total time of the cycle. The number of gas injectors may be six in the lead 115 of the 6Rod. In addition, the number of gas injectors may be eight in the lead 115 of the 8Rod.

After the source gas is injected, the purge gas is injected and the purge gas injected after the source gas is called the first purge gas. After the source gas injection, the reaction gas and the purge gas are injected, Gas can be said. Therefore, after the source gas injection, the first purge gas, the reactive gas, and the second purge gas can be deposited in the first sub cycle. On the other hand, since the step of removing the impurities of the thin film may be performed, the step of removing the impurities immediately after the first sub-cycle may be repeated in one cycle.

FIG. 4 is a schematic plan view of a thin film forming apparatus according to another embodiment of the present invention, and only differences from FIG. 3 will be described.

As shown, the thin film type growth according to another embodiment of the present invention can proceed the deposition step at a high temperature when the single atom layer thin film is deposited.

In the reaction process of applying the RF power, one of plasma, microwave, and ultraviolet rays may be used by using RF power.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

110: chamber
120:
140: Source gas injection part
150:
160: Plasma generator
180: Treatment section
170: Purge gas distributor

Claims (23)

A method of forming a thin film on a substrate,
Forming a single atomic layer thin film by sequentially spraying a source gas, a first purge gas, a reactive gas, and a second purge gas on the substrate; And
Removing the impurities of the single atomic layer thin film
/ RTI > The method of claim 1, wherein removing the impurities comprises:
And removing impurities which are caused in the source gas or remain in the single atomic layer thin film due to incomplete reaction of the source gas and the reactive gas
Wherein the thin film forming method comprises the steps of: 3. The method of claim 2,
Wherein the impurities are at least one element selected from among carbon, chlorine, hydrogen, nitrogen, and fluorine, metal, dielectric, or a compound thereof. The method of claim 1, wherein removing the impurities comprises:
Wherein at least one of an ionized oxygen ion, an ionized hydrogen ion, an ionized nitrogen ion, an ionized argon (Ar) ion, and an ionized helium (He) ion is used. The thin film forming method according to claim 1, wherein the step of forming the single atomic layer thin film and the step of removing the impurity are performed in a single cycle and the cycle is repeated. The thin film forming method according to claim 5, wherein the time of removing the impurity is 1/6 or less of the total time of the cycle. The thin film forming method according to claim 5, wherein the time of removing the impurity is 1/8 or less of the total time of the cycle. A method of forming a thin film on a substrate,
Repeating the first sub-cycle by forming a source gas, a first purge gas, a reactive gas, and a second purge gas on the substrate to form an atomic layer thin film of several to several tens of A thick;
Removing impurities of the atomic layer thin film; And
Repeating the cycle by cycling the step of forming the atomic layer thin film having a thickness of several to several tens of A and removing the impurity of the atomic layer thin film;
To form a thin film. 9. The method of claim 8, wherein removing the impurities
And removing the impurities which are caused in the source gas or remain in the single atomic layer thin film due to incomplete reaction of the source gas and the reactive gas. 9. The method of claim 8,
Wherein the impurities are at least one element selected from among carbon, chlorine, hydrogen, nitrogen, and fluorine, metal, dielectric, or a compound thereof. 9. The method of claim 8, wherein removing the impurities
Wherein at least one of an ionized oxygen ion, an ionized hydrogen ion, an ionized nitrogen ion, an ionized argon (Ar) ion, and an ionized helium (He) ion is used. The thin film forming method according to claim 8, wherein the time of removing the impurity is 1/6 or less of the total time of the cycle. The thin film forming method according to claim 8, wherein the time of removing the impurity is 1/8 or less of the total time of the cycle. A method of forming a thin film on a substrate,
Repeating the first sub-cycle by forming a source gas, a first purge gas, a reactive gas, and a second purge gas on the substrate to form an atomic layer thin film of several to several tens of A thick;
Oxidizing or nitriding the surface of the atomic layer thin film; And
And repeating the cycle by cycling the step of forming the atomic layer thin film of several to several tens of A atoms and the step of oxidizing or nitriding the surface of the atomic layer thin film. 15. The method of claim 14,
The oxidizing or nitrating step
Wherein an ionized oxygen ion or an ionized nitrogen ion is used. 16. The method of claim 15,
Wherein the time of the oxidizing or nitriding step is 1/6 or less of the total time of the cycle. 16. The method of claim 15,
Wherein the time of removing the impurities is 1/8 or less of the total time of the cycle. 1. A thin film forming method for forming a thin film on a substrate using a reaction between a source gas and a reactive gas, which are injected from a space of a chamber provided with a substrate supporting part on which the substrate is supported,
A source step of injecting and adsorbing the source gas to the substrate;
A reaction step of injecting the reaction gas and applying the RF power;
And a treatment for generating oxygen or hydrogen plasma in the space of the chamber is performed in one process cycle. 19. The method of claim 18,
And a purge step of injecting a purge gas after the source process or the reaction process. 20. The method of claim 19,
And a purge step of injecting a purge gas after the treatment step. 19. The method of claim 18,
Wherein the treatment step is performed at a time of 1/6 or less in one process cycle. 19. The method of claim 18,
Wherein the treatment step is performed at a time of 1/8 or less in one process cycle. 19. The method of claim 18,
Wherein the RF power is applied using one of plasma, microwave, and ultraviolet rays using RF power.

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