KR20190141609A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

It is to provide a technique for detecting the peeling of the substrate from the mounting table with high sensitivity.
[Workaround]
A mounting table on which a substrate is mounted is provided in a vacuum container, and the first electrostatic adsorption electrode and the second electrostatic adsorption electrode are separated from each other in the dielectric layer provided on the mounting table. The first electrostatic adsorption electrode electrostatically adsorbs the peripheral portion of the substrate mounted on the mounting table, and the second electrostatic adsorption electrode electrostatically adsorbs the central portion of the substrate mounted on the mounting table. DC voltages corresponding to a predetermined voltage set value are respectively applied to the first electrostatic adsorption electrode and the second electrostatic adsorption electrode from the first DC power supply and the second DC power supply. The voltage measuring unit measures the DC voltage applied to the first electrostatic adsorption electrode, and when the measured DC voltage exceeds the preset threshold in the peeling detection unit, the substrate is electrostatically adsorbed using the first electrostatic adsorption electrode. It is detected that the exfoliation has occurred.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

In the manufacturing process of a flat panel display (FPD), there exists a process of performing an etching process or a film-forming process using a plasma with respect to a board | substrate. This process is performed by mounting a substrate on a mounting table in a vacuum container, applying high frequency energy to the processing gas supplied to the space above the mounting table, and generating, for example, a capacitively coupled plasma or an inductively coupled plasma. . The mounting table used for such an apparatus may be provided with the board | substrate fixing mechanism called electrostatic chuck, for example. The electrostatic chuck has a configuration in which an electrostatic adsorption electrode is arranged in the dielectric layer, and the substrate is held on the mounting table by applying a DC voltage to the electrostatic adsorption electrode.

Patent Literature 1 describes a technique for detecting peeling from a mounting table of a substrate by monitoring a DC voltage supplied to the electrostatic adsorption electrode while electrostatically adsorbing the substrate to the mounting table. In the present technology, when the monitored DC voltage exceeds a preset threshold, it is determined that the substrate is separated from the mounting table, and the high frequency power to the high frequency power supply for plasma generation is stopped.

Prior Art Literature

[Patent Documents]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2016-174081

The present disclosure provides a technique for accurately detecting partial peeling from a mounting table of a large substrate.

A substrate processing apparatus according to one aspect of the present disclosure,

A mounting table provided in a vacuum container for performing substrate processing using a processing gas on the substrate, and on which the substrate to be processed is mounted;

A first electrostatic adsorption electrode formed in the dielectric layer provided on the mounting table and provided in correspondence with the planar shape of the peripheral portion to electrostatically adsorb the peripheral portion of the substrate mounted on the mounting table;

A second electrostatic adsorption electrode formed separately from the first electrostatic adsorption electrode in the dielectric layer provided on the mounting table and provided in correspondence with the shape of the center part to electrostatically adsorb the central portion of the substrate mounted on the mounting table; ,

A first DC power supply and a second DC power supply for applying a DC voltage corresponding to a preset voltage setting value to the first electrostatic adsorption electrode and the second electrostatic adsorption electrode, respectively;

A voltage measuring unit measuring a DC voltage applied to the first electrostatic adsorption electrode;

When the DC voltage measured by the said voltage measuring part exceeds a preset threshold, it is characterized by including the peeling detection part which detects that peeling of the board | substrate currently electrostatically adsorb | sucked using the said 1st electrostatic adsorption electrode.

According to the present disclosure, partial peeling from the mounting table of the large-sized substrate can be detected with high accuracy.

1 is a longitudinal side view illustrating the configuration of a first embodiment of a substrate processing apparatus of the present disclosure.
It is a top view explaining the structural example of the 1st electrostatic adsorption electrode and the 2nd electrostatic adsorption electrode provided in the said substrate processing apparatus.
3 is a schematic longitudinal side view illustrating the first electrostatic adsorption electrode, the second electrostatic adsorption electrode, and the substrate.
4 is a flowchart for explaining a substrate processing method of the present disclosure.
Fig. 5 is a characteristic diagram showing time variation of the source power, the bias power, and the DC voltage value of the first electrostatic adsorption electrode.
6 is a plan view for explaining a second embodiment of the substrate processing apparatus of the present disclosure.
7 is a plan view illustrating a third embodiment of the substrate processing apparatus of the present disclosure.

A first embodiment of the substrate processing apparatus 1 of the present disclosure will be described. As shown in FIG. 1, the substrate processing apparatus 1 includes, for example, a vacuum container 10 made of aluminum or stainless steel, which is connected to a ground potential. In the side surface of the vacuum container 10, a carry-in / out port 11 for exchanging a substrate to be processed, for example, a rectangular glass substrate (hereinafter referred to as a "substrate") G, is formed. Reference numeral 12 in the figure indicates a gate valve for opening and closing the carry-in / out port 11. Moreover, the exhaust port 13 is opened in the lower side surface of the vacuum container 10, and the vacuum exhaust part 15 is connected to the exhaust port 13 through the exhaust pipe 14. As shown in FIG.

Inside the vacuum vessel 10, a mounting table 3 on which the substrate G is mounted is disposed on the lower side thereof. The substrate G is rectangular in plan view, has a long side of 3.37 m and a short side. The large rectangular substrate called 10th generation so-called G10 of 2.94m can be illustrated. The mounting table 3 is comprised by the rectangular-shaped foot-note shape, The detailed structure is mentioned later.

On the upper side of the vacuum container 10, a spiral inductive coupling antenna 50, which is a plasma forming unit, is provided via a window member (not shown) made of a dielectric material or a metal so as to face the mounting table 3. A source power source (high frequency power supply) 52 for plasma generation is connected to the inductively coupled antenna 50 via a matcher 51. By supplying source power (high frequency power for generating plasma) from the source power supply 52 to the inductive coupling antenna 50, an electric field for generating plasma is generated in the vacuum vessel 10.

In the vacuum vessel 10, below the inductive coupling antenna 50 and a window member (not shown), a shower head 2 for supplying a processing gas into the vacuum vessel 10 is interposed between the insulating portions 16. It is provided. The inside of the shower head 2 is formed as the gas dispersion chamber 20. Moreover, the lower surface of the shower head 2 is formed so as to oppose the mounting surface of the mounting table 3, and is provided with many gas supply holes 21. As shown in FIG. Moreover, the process gas supply pipe 22 for supplying process gas toward the gas dispersion chamber 20 is connected to the upper surface of the shower head 2. The process gas supply pipe 22 is provided with a process gas supply source 23 for supplying a process gas including an etching gas such as CF ₄ or Cl ₂ , a flow rate adjusting unit M22, and a valve V22 in this order from an upstream side, for example. have.

The mounting table 3 has a structure in which a susceptor 31 made of a conductor and an electrostatic chuck 4 for fixing the substrate G by electrostatic attraction are stacked in this order from the bottom. The susceptor 31 is provided on the spacer 33 provided through the insulating layer 30 in the center part of the bottom face of the vacuum container 10, and the side surfaces of the susceptor 31 and the spacer 33 are For example, it is covered with a ceramic cover 35. A bias power supply (high frequency power supply) 55 is connected to the susceptor 31 via a matching unit 54 by a wiring 53. When the bias power, which is a high frequency power, is applied to the susceptor 31 by the bias power supply 55, the substrate G having the active species of the processing gas generated in the vacuum vessel 10 by the plasma mounted on the mounting table 3 is loaded. It can be pulled in.

The heat transfer gas supply path 32 is formed in the inside of the mounting table 3, and the downstream end part branches into several, and it disperse | distributes and opens to the upper surface of the mounting table 3, and is a some heat transfer gas. It constitutes a supply port. In addition, in order to prevent the trouble of drawing, some electrothermal gas supply ports are shown in FIG. 1, and the electrothermal gas supply path 32 in the electrostatic chuck 4 is abbreviate | omitted in FIG. The upstream side of the heat transfer gas supply path 32 is connected to the heat transfer gas supply source 38 via the flow rate adjusting unit 37 by the heat transfer gas supply pipe 36 provided outside the vacuum vessel 10.

Inside the spacer 33, for example, an annular refrigerant passage 34 extending in the circumferential direction is provided. The coolant channel 34 is circulated and supplied with a heat conductive medium adjusted to a predetermined temperature by a chiller unit (not shown), and is configured to control the processing temperature of the substrate G by the temperature of the heat conductive medium. Moreover, the lifting pins (not shown) for exchanging the board | substrate G between the mounting table 3 and the external conveyance arm penetrate the base plate part of the mounting table 3 and the vacuum container 10 in a vertical direction, It is provided so that it may drive from the surface of the mounting table 3.

Subsequently, the electrostatic chuck 4 will be described. The electrostatic chuck 4 has a structure in which the electrostatic adsorption electrode 43 is sandwiched between the upper dielectric layer 41 and the lower dielectric layer 42. The dielectric layers 41 and 42 are made of ceramics such as alumina (Al ₂ O ₃ ), for example, and the electrostatic adsorption electrode 43 is made of metal, for example.

The electrostatic adsorption electrode 43 includes the first electrostatic adsorption electrode 44 and the second electrostatic adsorption electrode 45. The 1st electrostatic adsorption electrode 44 (henceforth a "1st electrode") is provided corresponding to the planar shape of the said peripheral part, in order to electrostatically adsorb the peripheral part of the board | substrate G mounted in the mounting table 3. As shown in FIG. The second electrostatic adsorption electrode 45 (hereinafter referred to as "second electrode") is formed by electrically separating the first electrode 44 via an insulating member and mounted on the mounting table 3. In order to electrostatically adsorb | suck a center part, it is provided corresponding to the shape of the said center part.

FIG. 2 is a plan view showing a structural example of the first electrode 44 and the second electrode 45. The first electrode 44 corresponds to an annular planar shape along the edge of the rectangular substrate, and is in plan view. It is formed in the shape of a rectangular ring. The outer edge of the first electrode 44 is, for example, substantially the same as the outer edge of the substrate G mounted on the mounting table 3, but is set to be located slightly outside or inside the outer edge of the substrate G. In this example, the outer edge of the first electrode 44 is formed so as to match the outer edge of the substrate G. In FIG. 2, the peeling region P of the substrate G, which will be described later, is projected by a dotted line.

The area of the first electrode 44 is formed to be 4.2 m ² or less, for example. Thus, it is preferable that the area of the 1st electrode 44 is 4.2 m <^2> or less, because, as mentioned later, when the area of an electrode becomes large, the sensitivity which detects peeling of the board | substrate G will fall. The area of 4.2 m ² is a value obtained empirically from the relationship between the size of the substrate G and the detection accuracy of peeling of the substrate G. Thus, it is preferable that the area of the 1st electrode 44 is small, and for this reason, it is preferable that the area of the 1st electrode 44 is set smaller than the area of the 2nd electrode 45. FIG.

The 2nd electrode 45 is formed in rectangular shape by planar view, and is arrange | positioned apart from the 1st electrode 44 inside the 1st electrode 44. As shown in FIG. The separation distance between the first electrode 44 and the second electrode 45 is set to a value at which the annular separation region can electrically separate the first electrode 44 and the second electrode 45. The said separation distance is 5 mm-30 mm, for example. Moreover, the area of the 2nd electrode 45 is set to the magnitude | size which can fully electrostatically adsorb | suck the center part of the board | substrate G by the 2nd electrode 45. As shown in FIG. In addition, the planar shape of the 2nd electrode 45 is not limited to the rectangular shape, For example, an elongate ellipse shape may be sufficient according to the long side direction of the board | substrate G. As shown in FIG.

The 1st electrode 44 is connected to the 1st DC power supply 63 through the 1st wiring 61 in which the resistor 62 for voltage adjustment was provided. Moreover, the 2nd electrode 45 is connected to the 2nd DC power supply 66 via the 2nd wiring 64 in which the resistor 65 for voltage adjustment was provided. The 1st DC power supply 63 and the 2nd DC power supply 66 are preset in the range of 0-6000V, respectively, to the 1st electrode 44 and the 2nd electrode 45 based on a voltage setting value, respectively. It is configured to apply DC voltage.

In this way, when a DC voltage corresponding to a preset voltage setting value is applied from the first DC power supply 63 and the second DC power supply 66, respectively, the first electrode 44 and the second electrode 45 are connected by the electrostatic force. The substrate G mounted on the mounting table 3 is electrostatically attracted. Moreover, the voltage measuring part 67 which measures the DC voltage applied to the 1st electrode 44 between the 2nd resistors 62 is connected to the 1st wiring 61, for example.

The substrate processing apparatus 1 is provided with the control part 7. The control unit 7 is provided with a program, a memory, and a CPU, and a command is issued to the program to drive the substrate processing apparatus 1 and execute the substrate processing for the substrate G. In addition, the program is commanded to monitor the DC voltage by the voltage measuring unit 67 in accordance with a flow chart described later, and to determine the supply stop of the source power and the bias power.

Moreover, the control part 7 is equipped with the peeling detection part 71 and the power supply control part 72, for example. When the DC voltage measured by the voltage measuring part 67 exceeds the preset threshold, the peeling detection part 71 is provided from the mounting table 3 to the board | substrate G currently electrostatic-adsorbed using the 1st electrode 44. FIG. It is to detect that peeling has occurred. The threshold value is specified based on a value previously grasped by an experiment, simulation, or the like, and is set as, for example, a value having a margin of about 2% to 5% to a DC voltage value (stable value) stably measured during plasma processing. . Since the detection accuracy of the voltage measuring unit 67 also depends on the noise, the threshold may be large depending on the magnitude of the noise. However, from the viewpoint of suppressing the occurrence of abnormal discharge, it is preferable to suppress the threshold to a value that has a margin of 5% with respect to the stable value. The threshold value is stored in the memory of the control unit 7.

When the occurrence of peeling of the board | substrate G is detected, the power supply control part 72 outputs the control signal for stopping supply of the high frequency electric power from the source power supply 52, for example. In addition, the power supply control part 72 of this example is comprised so that, when generation | occurrence | production of the peeling of the board | substrate G is detected, it will output the control signal for stopping supply of the high frequency electric power from the bias power supply 55, for example. For example, the voltage measuring unit 67 measures the DC voltage at several msec intervals, for example, at 1 msec intervals, and compares the measured data with the above-described threshold value, and the peel detection unit 71 determines whether or not the substrate G is peeled off. Determine. Moreover, when peeling of the board | substrate G is detected by the peeling detection part 71, the control part 7 outputs the alarm that the board | substrate G peeled, for example. The power supply control unit 72 is configured to output a control signal for stopping the supply of the high frequency power from the source power supply 52 and the bias power supply 55. In this way, the control part 7 performs detection control of substrate peeling.

In addition, at the start of operation of the substrate processing apparatus 1, the source power is not stabilized, and there is a fear that the measurement result of the DC voltage by the voltage measuring unit 67 may be affected. Therefore, the control part 7 memorize | stores the determination reference value (variation range) of the fluctuation | variation of these power values of the source power and the bias power which generate | occur | produce at the start of operation. The power supply supplied from the source power supply 52 is configured to determine whether or not the power value supplied from the source power supply 52 is within a predetermined fluctuation range. Similarly, you may comprise so that the power value supplied from the bias power supply 55 may determine whether it is a value within the fluctuation range of the said bias power.

The substrate processing apparatus 1 of the present example uses a DC voltage value applied to the first electrode 44 measured by the voltage measuring unit 67 in order to detect peeling of the substrate G from the mounting table 3. . Next, the relationship between the peeling of the board | substrate G and the DC voltage value applied to the 1st electrode 44 is demonstrated with reference to FIG. 3 is a longitudinal side view schematically showing the electrostatic chuck 4 and the substrate G. FIG. 3 is a state in which the substrate G is normally attracted to the mounting table 3, and in the left side of FIG. The state which peeled from 3) is shown, respectively.

In the substrate processing apparatus 1, since the substrate G and the electrostatic adsorption electrode 43 are separated from each other via the upper dielectric layer 41, the substrate G constitutes the capacitor 40. In the state where the plasma is generated in the vacuum chamber 10, the substrate G is grounded through the plasma, and the first DC power source 63 and the second DC power source are connected to the first electrode 44 and the second electrode 45. DC voltages are applied from 66 respectively. For this reason, negative charge is charged to the substrate G, and positive charge is charged to the first and second electrodes 44 and 45. Since the first and second electrodes 44 and 45 and the substrate G are attracted to each other by electrostatic attraction due to these charges, the substrate G is held and held on the mounting table 3.

For example, as shown in the right side of FIG. 3, when the board | substrate G is hold | maintained in the attitude | position horizontal to the mounting table 3, the relationship of following formula (1) and (2) is established.

Q = CV ···(One)

C = εo × εr × (S / d) ... (2)

Q: Electric charge of capacitor 40

C: capacitance of the capacitor 40

V: potential difference between the substrate G and the first electrode 44

εo: dielectric constant of vacuum

εr: relative dielectric constant of dielectric layer 41

S: Area of substrate G

d: distance between the substrate G and the first electrode 44 (thickness of the dielectric layer 41)

After the stabilization of the source power and the bias power, the charge Q of the capacitor 40 is constant. Therefore, when the board | substrate G does not peel from the mounting table 3 and the distance d of the board | substrate G and the 1st electrode 44 is constant, a DC voltage value does not change. On the other hand, as shown in the left side of FIG. 3, when the board | substrate G peels from the mounting table 3, the distance (D) of the mounting table 3 and the board | substrate G will become large, and the distance of the board | substrate G and the 1st electrode 44 will be (d + Δd). It becomes

As a result, the electrostatic capacity C of the capacitor | condenser 40 reduces by Formula (2) by expansion of the distance of the board | substrate G and the electrode 44. FIG. Since the charge Q of the capacitor 40 does not change before and after the substrate G peels off the mounting table 3, the potential difference V between the substrate G and the first electrode 44 increases in the equation (1). Since the substrate G is grounded through the plasma, the potential of the first electrode 44 changes. That is, the DC voltage value of the first electrode 44 rises. Thus, since there is a correlation between the peeling of the board | substrate G from the mounting table 3, and the DC voltage value applied to the 1st electrode 44, it measures from a mounting table 3 by measuring a DC voltage value. Peeling of the board | substrate G of can be detected.

On the other hand, the peeling from the mounting table 3 of the board | substrate turned out to be more likely to peel only in a part of the periphery of the board | substrate G than the possibility of peeling similarly in the whole surface of the board | substrate G. Moreover, even if the area of the board | substrate G became large, it turned out that the area of the peeling area | region P tends not to change significantly before the enlargement. In addition, regardless of the change in the area of the substrate G, the voltage applied to the first and second electrodes 44 and 45 when the substrate G is adsorbed and held is almost constant.

The inventors, for example, in the sixth generation, the substrate G called so called G6, the DC voltage measured by the voltage measuring unit by the method described in Patent Document 1 described above, in which the electrostatic adsorption electrode 43 is not divided. Based on this, it was found that peeling of the substrate G could be detected. G6 board | substrate G is a board | substrate of 1.85 m of long sides, 1.5 m of short sides, and 2.78 m <^2> of areas, Even if it is this size, peeling of the board | substrate from the mounting base 3 arises in the periphery of a board | substrate, and it is a peeling area | region regardless of board | substrate size The size of 거의 tends to hardly change. For this reason, when the board | substrate G enlarges in the next generation, it may become difficult to detect the voltage change at the time of peeling generation, as demonstrated below.

That is, in the method of detecting peeling of the board | substrate G by the change of the measured value of DC voltage, as demonstrated using Formula (1) and FIG. 3, the increase of DC voltage depends on the area of the peeling area P. FIG. Therefore, when the magnitude | size of the peeling area | region P hardly changes, with the enlargement of the board | substrate G, the area of the peeling area | region P becomes small with respect to the size of the board | substrate G. For this reason, when an electrostatic adsorption electrode is the same size as the board | substrate G, in response to enlargement of a board | substrate size, the increase of the DC voltage at the time of peeling of the board | substrate G becomes small, and a measurement sensitivity becomes low.

Based on the reason demonstrated above, in this embodiment, the electrostatic adsorption electrode 43 is made of the 1st electrode 44 corresponding to the board | substrate periphery which peeling of the board | substrate G is easy to produce, and the agent corresponding to the center part of the board | substrate G. It is divided into two electrodes 45. As a result, since the area of the 1st electrode 44 can be suppressed smaller than the board | substrate G, even if the board | substrate G becomes large, it is possible to prevent the fall of the measurement sensitivity of a DC voltage value. In this example, the area of the first electrode 44 is formed to be 4.2 m ² or less. This value is an area equivalent to about 1.5 times the area of G6 substrate G, and is obtained empirically based on the size of substrate G which can detect peeling by the conventional method of patent document 1. Thus, by making the area of the 1st electrode 44 into 4.2 m <^2> or less, generation | occurrence | production of partial peeling in the periphery of larger board | substrate G can be detected with high sensitivity. In addition, there is no particular limitation on the lower limit of the area of the first electrode 44, but from the viewpoint of suppressing the detection sensitivity of the increase in the DC voltage being too high, it is 0.9 m ² (about 3 minutes of the area of the G6 substrate G). 1) The case above is illustrated.

Subsequently, the operation of the substrate processing apparatus 1 will be described with reference to the flowchart of FIG. 4, taking the etching process for the substrate G as an example. First, the board | substrate G is mounted in the mounting table 3 by the cooperative action of the conveyance arm which entered from the exterior, and the lifting pin not shown. Then, after closing the gate valve 12, electrothermal gas is supplied between the mounting table 3 and the board | substrate G. As shown in FIG. The first DC power supply 63 and the second DC power supply 66 are connected to the first electrode 44 and the second electrode 45 of the electrostatic chuck 4 based on the information described in the processing recipe or the like. Apply the set DC voltage respectively.

Thereby, the 1st and 2nd electrodes 44 and 45 and the board | substrate G attract each other, and the board | substrate G is adsorbed-held by the mounting table 3. As shown in FIG. Then, in the vacuum vessel 10, a processing gas containing an etching gas such as CF ₄ or Cl ₂ is supplied from the shower head 2, and the vacuum is exhausted from the exhaust port 13 to provide a vacuum vessel ( 10) Adjust the pressure in the predetermined pressure.

Subsequently, the application of the source power is started from the source power supply 52 to the inductive coupling antenna 50, and the application of the bias power is started from the bias power supply 55 to the susceptor 31 (step S1). For example, the source power is first applied, the source power rises and stabilizes, and then the bias power is applied. Thereafter, the control unit 7 compares the measured values of the source power and the bias power with the variation range, and determines whether the source power and the bias power are stable (step S2). When it is judged that these powers are stable (step S2: Yes), it is confirmed that the DC voltage does not fluctuate under the influence of the fluctuation of the source power and the bias power. Then, detection control of substrate peeling is started (step S3).

In the vacuum vessel 10, a high frequency electric field is generated between the mounting table 3 and the shower head 2 by the application of the source power to the inductive coupling antenna 50, whereby the vacuum vessel 10 The process gas supplied in the excitation) is excited to generate a plasma of the process gas. Subsequently, by applying the bias power to the susceptor 31 from the bias power supply 55, the positive ions in the plasma are attracted to the substrate G by the direct current bias potential generated in the substrate G via the mounting table 3. In this way, plasma etching is uniformly performed on the entire surface of the substrate G by the plasma.

In detection control of substrate peeling, the voltage measuring unit 67 measures the DC voltage value applied to the first electrode 44 at, for example, 1 msec interval (step S4). In step S5, it is determined whether or not the measured DC voltage value exceeds the threshold, and if it is below the threshold, it is determined that peeling of the substrate G has not occurred (step S5: No), and the process returns to step S4 to continue the process.

On the other hand, if the DC voltage value exceeds the threshold, it is determined that peeling of the substrate G has occurred (step S5: Yes), and in step S6, for example, an alarm is output and the power supply control unit 72 plasmas the substrate G. A stop signal is output to the source power supply 52 and the bias power supply 55 which supply high frequency electric power in the vacuum container 10 for processing. In this way, supply of high frequency electric power (source power and bias power) is stopped, the plasma in the vacuum container 10 is dissipated, and a process is complete | finished.

According to this embodiment, when the DC voltage applied to the 1st electrode 44 corresponding to the board | substrate peripheral part with which the peeling of the board | substrate G is easy to generate | occur | produce is measured, and the measured DC voltage exceeds the threshold value, the peeling of the board | substrate G is carried out. Detects that has occurred. Therefore, even if the board | substrate G enlarges, the enlargement of the 1st electrode 44 which measures DC voltage value can be prevented, and it can fully grasp | ascertain the increase of DC voltage according to generation | occurrence | production of partial peeling by this. For this reason, even if it is the large substrate G of G10, for example, the detection sensitivity of board | substrate peeling can be improved, and partial peeling can also be detected.

Specifically, the area of the G10 substrate G is 3.57 times the area of the G6 substrate. For this reason, when the electrostatic adsorption electrode is the same size as the board | substrate G, and the peeling area | region P is the same size, it is understood that the change of the DC voltage of the G10 board | substrate G will be 0.28 times that of a G6 board | substrate, and detection sensitivity will fall. In the above embodiment, since the area of the first electrode 44 is formed to be 4.2 m ² or less, the occurrence of substrate peeling can be detected with high sensitivity.

Thus, when the board | substrate G peels from the mounting table 3 by acquiring the DC voltage value applied to the 1st electrode 44, peeling of the board | substrate G can be detected immediately. For example, since the voltage measuring part 67 measures DC voltage at 1 msec interval, even if the board | substrate G peels from the mounting table 3, generation | occurrence | production of the said peeling can be detected after several msec. In this way, since the peeling of the board | substrate G can be detected early, the operation | movement which stops supply of the high frequency electric power for plasma generation can be performed quickly after peeling generate | occur | produces. As a result, the situation in which the plasma processing is continued in the state where the substrate G has peeled from the mounting table 3 can be avoided, and the occurrence of abnormal discharge or the occurrence of abnormal discharge caused by the entry of the active species of plasma from the peeled portion can be avoided. The damage of the mounting table 3 by active species can be prevented previously.

5 shows the time change of the source power, the bias power, and the measured direct current voltage value when abnormal discharge occurs during the plasma etching. In Fig. 5, the vertical axis represents the power level of the source power and the bias power, the DC voltage value, and the horizontal axis represents the time. Application of source power is started at time t1, and application of bias power is started at time t2. After both the source power and the bias power are stabilized, control of substrate peeling is started at time t3, but the DC voltage value is stabilized at a constant value while the source power and the bias power are stable.

The time t5 is a timing at which the abnormal discharge has occurred, and both the source power and the bias power are changed by the abnormal discharge. In addition, the DC voltage value stabilized at a constant value also drops rapidly. Moreover, although it was recognized that the board | substrate G peeled from the mounting table 3 at time t4 before time t5, the DC voltage value of the 1st electrode 44 at this time is rising, and peeling and a change of DC voltage value respond | correspond. It was confirmed. In FIG. 5, the direct current voltage value shown by the dotted line is a case where the electrostatic adsorption electrode of the same size as the board | substrate size is used, and it is recognized that if the electrostatic adsorption electrode is large in this way, the change of DC voltage will become small. From this, it is possible to detect the peeling of the substrate G with high sensitivity by electrostatically adsorbing the periphery of the substrate G using the first electrode 44 and measuring the change in the DC voltage value of the electrode 44. I understand.

Subsequently, a second embodiment of the substrate processing apparatus of the present disclosure will be described with reference to FIG. 6. In the substrate processing apparatus of this example, when the voltage measuring unit 67 according to the first embodiment is used as the first voltage measuring unit, the second voltage measuring unit 68 measures the DC voltage applied to the second electrode 45. It is equipped with more. Moreover, the peeling detection part 71 has the case where the 1st DC voltage value measured by the 1st voltage measuring part 67 exceeded the 1st threshold value, and the 2nd DC voltage value measured by the 2nd voltage measuring part 68 is When exceeding a 2nd threshold value, it is comprised so that detection of peeling of the board | substrate G may be detected, respectively.

Also in this embodiment, like the first embodiment, for example, after the source power supplied from the source power supply 52 and the bias power supplied from the bias power supply 55 are stabilized, detection control of substrate peeling is started. do. In the detection control of the substrate peeling, the first voltage measuring unit 67 measures the first DC voltage value applied to the first electrode 44, and the second voltage measuring unit 68 measures the first DC voltage value. The second DC voltage value applied to the second electrode 45 is measured.

Then, it is determined whether the measured first DC voltage value and the second DC voltage value exceed the first threshold value and the second threshold value, respectively, and when the threshold value is below the threshold value, it is determined that peeling of the substrate G does not occur, and the process is continued. do. On the other hand, if the 1st DC voltage value exceeds the 1st threshold value, it determines with peeling generate | occur | producing in the peripheral part of the board | substrate G. For example, an alarm is output, the power supply control unit 72 outputs a stop signal to the source power source 52 and the bias power source 55 to stop the supply of high frequency power (source power and bias power). Moreover, when the 2nd DC voltage value exceeds the 2nd threshold value, it determines with peeling occurring in the center part of the board | substrate G, and outputs an alarm, for example.

According to this embodiment, since partial peeling of not only the periphery part of the board | substrate G but also the center part is detected, it is possible to detect the case where the curvature generate | occur | produces, for example, the board | substrate center part peels from the mounting table 3, etc. . Such information is useful for evaluating the uniformity of the processing state and the like. In addition, since occurrence of abnormal discharge and entry of plasma active species hardly occur at the time of peeling of only the central portion of the substrate G, an example of only alarm occurrence is shown. May be performed.

Subsequently, a third embodiment of the substrate processing apparatus of the present disclosure will be described with reference to FIG. 7. The first electrode of this example is divided into a plurality of split electrodes along the circumferential direction of the periphery of the substrate G. In FIG. 7, the example which divided | segmented the 1st electrode 8 into four division electrodes 81, 82, 83, and 84 is shown. In this example, corresponding to four sides of the substrate G, one split electrode is provided on one side, and the split electrodes are separated from each other, and each split electrode and the second electrode 45 are separated from each other. Are arranged. The two divided electrodes opposing each other form a group, a first DC power supply is provided corresponding to each group, and a DC voltage corresponding to a preset voltage setting value is applied to the divided electrodes included in each group. Consists of.

In the example of FIG. 7, the split electrodes 81 and 83 form a first group, and the split electrodes 81 and 83 are the first DC power supply for the first group by the wiring 91. (92). In addition, the split electrodes 82 and 84 constitute a second group, and these split electrodes 82 and 84 are connected to the first DC power supply 94 for the second group by the wiring 93. Connected. Reference numerals 95 and 96 are resistors for voltage adjustment, respectively, and wirings 91 and 93 are connected to voltage measuring units 97 and 98, respectively. The voltage measuring units 97 and 98 are configured to measure the DC voltage applied to the divided electrodes 81, 83, 82, and 84 included in the group for each of the groups. .

When the DC voltage measured for each of the groups in the voltage measuring units 97 and 98 exceeds a preset threshold, the peeling detecting unit 71 includes the divided electrodes 81 and 83 / included in the group. It is comprised so that the occurrence of peeling of the board | substrate G currently electrostatically adsorbed using (82) and (84) may be detected. The threshold is set for each group. The other structure is the same as that of 1st Embodiment.

In this embodiment, like the first embodiment, for example, the source power supplied from the source power supply 52 and the bias power supplied from the bias power supply 55 are stabilized, and then the detection control of substrate peeling is started. . In this detection control of substrate peeling, the voltage measuring unit 97 measures the DC voltage values applied to the split electrodes 81 and 83 included in the first group. In addition, the voltage measuring unit 98 measures the DC voltage values applied to the split electrodes 82 and 84 included in the second group.

Then, it is determined whether or not the measured DC voltages of the divided electrodes 81, 83, 82, and 84 of the respective groups exceed the thresholds, and if they are each below the thresholds, the peeling of the substrate G does not occur. It judges that it is, and continues processing. On the other hand, when it exceeds the threshold, it determines with peeling generate | occur | producing in the peripheral part of the board | substrate G. For example, an alarm is output, and a power supply control section outputs a stop signal to the source power source 52 and the bias power source 55 to stop the supply of high frequency power (source power and bias power). Also in this example, the DC voltage value applied to the second electrode 45 may be measured, and if the measured value exceeds the threshold, it may be determined that peeling has occurred in the center portion of the substrate G.

According to this embodiment, since the 1st electrode is further divided | segmented into several, the peeling of the board | substrate G with higher sensitivity can be detected. Moreover, since DC voltage is measured for every group of split electrodes, peeling area P becomes easy to specify.

In the above, the peeling detecting unit and the voltage measuring unit may be provided in the power supply unit of the source power supply 52 without intervening a control unit for controlling the substrate processing apparatus, and the voltage measuring unit changes in the potential at the electrostatic adsorption electrode. Monitoring directly or indirectly. Moreover, in the above-mentioned example, when the DC voltage exceeds the threshold once, it is determined that the substrate G has peeled from the mounting table 3, but in consideration of the influence of the noise of the DC voltage, the DC voltage is continuously repeated a plurality of times within a predetermined period. When the threshold value is exceeded, peeling of the substrate G may be detected.

In addition, the plasma forming unit provided in the substrate processing apparatus 1 is not limited to the inductive coupling antenna 50, but provides an upper electrode so as to face the mounting table (lower electrode), and provides a capacitive coupling between the upper electrode and the lower electrode. The plasma may be formed by. In this case, high frequency power is supplied to one of the mounting table and the upper electrode from the high frequency power supply for plasma generation to form plasma.

In the above, the substrate G to be processed is not necessarily limited to the rectangular substrate. In addition, the substrate process using the process gas performed in a vacuum container is not limited to an etching, You may form into a film. Moreover, it is not necessary to necessarily form a plasma in a vacuum container, but it is applicable also to a thermal CVD process, for example.

It should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The above embodiments may be omitted, substituted, or changed in various forms without departing from the scope of the appended claims and their known features.

1: substrate processing apparatus
10: vacuum vessel
3: mounting table
41: dielectric layer
43: electrostatic adsorption electrode
44: first electrostatic adsorption electrode
45: second electrostatic adsorption electrode
63: first DC power
66: second DC power supply
67: voltage measuring unit
71: peeling detection unit

Claims (8)

A mounting table provided in a vacuum container for performing substrate processing using a processing gas on the substrate, and on which the substrate to be processed is mounted;
A first electrostatic adsorption electrode formed in the dielectric layer provided on the mounting table and provided in correspondence with the planar shape of the peripheral portion to electrostatically adsorb the peripheral portion of the substrate mounted on the mounting table;
A second electrostatic adsorption electrode formed separately from the first electrostatic adsorption electrode in the dielectric layer provided on the mounting table and provided in correspondence with the shape of the center part to electrostatically adsorb the central portion of the substrate mounted on the mounting table; ,
A first DC power supply and a second DC power supply for applying a DC voltage corresponding to a preset voltage setting value to the first electrostatic adsorption electrode and the second electrostatic adsorption electrode, respectively;
A voltage measuring unit measuring a DC voltage applied to the first electrostatic adsorption electrode;
When the DC voltage measured by the voltage measuring unit exceeds a preset threshold, the peeling detecting unit detects that peeling of the substrate being electrostatically adsorbed using the first electrostatic adsorption electrode occurs.
The substrate processing apparatus characterized by the above-mentioned.
The method of claim 1,
When the voltage measuring unit is a first voltage measuring unit, a second voltage measuring unit for measuring a DC voltage applied to the second electrostatic adsorption electrode,
The peeling detecting unit further detects occurrence of peeling of the substrate that is electrostatically adsorbed using the second electrostatic adsorption electrode when the DC voltage measured by the second voltage measuring unit exceeds a preset threshold.
Substrate processing apparatus, characterized in that.
The method according to claim 1 or 2,
The first electrostatic adsorption electrode is divided into a plurality of split electrodes along the circumferential direction of the periphery of the substrate,
When the plurality of divided electrodes are divided into a plurality of groups, a plurality of divided electrodes provided in correspondence with the plurality of groups, respectively, and configured to apply a DC voltage corresponding to a preset voltage setting value to the divided electrodes included in the associated groups. The first DC power supply, the voltage measuring unit for measuring the DC voltage applied to the divided electrode included in the group, for each group;
The peeling detecting unit detects the occurrence of peeling of the substrate that is electrostatically adsorbed using the split electrodes included in the group when the DC voltage measured for each group in the voltage measuring unit exceeds a preset threshold.
Substrate processing apparatus, characterized in that.
The method according to any one of claims 1 to 3,
A high frequency power supply unit for supplying high frequency power to a plasma forming unit for generating plasma of a processing gas in the vacuum container;
A power supply control unit that outputs a control signal for stopping supply of high frequency power from the high frequency power supply unit when occurrence of peeling of the substrate that is electrostatically adsorbed using the first electrostatic adsorption electrode in the peeling detection unit is detected;
The substrate processing apparatus characterized by the above-mentioned.
The method according to any one of claims 1 to 4,
The said board | substrate is a rectangular board | substrate, The said 1st electrostatic adsorption electrode is provided corresponding to the annular planar shape along the edge of the said rectangular board | substrate,
It is formed so that the area of the said 1st electrostatic adsorption electrode may be 4.2 m <^2> or less.
Substrate processing apparatus, characterized in that.
Mounting a substrate to be processed on a mounting table provided in a vacuum container for performing substrate processing using a processing gas to the substrate;
In order to electrostatically adsorb the periphery of the substrate mounted on the mounting table, a first electrostatic adsorption electrode formed in the dielectric layer provided on the mounting table and provided corresponding to the planar shape of the peripheral portion, and a central portion of the substrate mounted on the mounting table. In order to electrostatically adsorb the electrodes, a DC voltage corresponding to a predetermined voltage set value is applied to each of the second electrostatic adsorption electrodes formed in the dielectric layer provided on the mounting table and provided in correspondence with the shape of the center portion, Electrostatic adsorption of the substrate mounted on the substrate,
Measuring a DC voltage applied to the first electrostatic adsorption electrode;
Detecting that the peeling of the substrate being electrostatically adsorbed using the first electrostatic adsorption electrode occurs when the measured DC voltage exceeds a preset threshold;
Substrate processing method comprising a.
The method of claim 6,
Supplying high frequency power to a plasma forming unit for generating plasma of a processing gas in the vacuum container;
A step of stopping supply of high frequency power to the plasma forming unit when the occurrence of peeling of the substrate being electrostatically adsorbed using the first electrostatic adsorption electrode is detected;
Substrate processing method comprising a.
The method according to claim 6 or 7,
The said board | substrate is a rectangular board | substrate, The said 1st electrostatic adsorption electrode is provided corresponding to the annular planar shape along the edge of the said rectangular board | substrate,
It is formed so that the area of the said 1st electrostatic adsorption electrode may be 4.2 m <^2> or less.
Substrate processing method characterized in that.

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