KR20240168428A - Deposition source, deposition source array, and deposition device - Google Patents

Abstract

A deposition source (100) for depositing a material on a substrate is described. The deposition source (100) includes a rotatable cathode (110) connected to a first drive (131). Additionally, the deposition source (100) includes a rotatable magnet assembly (120) provided within the rotatable cathode (110). The rotatable magnet assembly (120) is connected to a second drive (132). The first drive (131) and the second drive (132) are provided above the rotatable cathode (110). In addition, a deposition source arrangement and a deposition apparatus are described.

Description

Deposition source, deposition source array, and deposition device

Embodiments of the present disclosure relate to deposition of materials by sputtering from a target. In particular, embodiments of the present disclosure relate to deposition sources having rotatable cathodes and rotatable magnet assemblies. Furthermore, embodiments described herein relate specifically to deposition source arrays and deposition devices configured to deposit materials on a substrate using a sputtering process.

In many applications, it is necessary to deposit thin layers on a substrate. The substrates may be coated in one or more chambers of a coating apparatus. The substrates may be coated under vacuum using vapor deposition techniques.

Several methods are known for depositing materials on substrates. For example, substrates can be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD) process. The process is performed in a process apparatus or process chamber in which the substrate to be coated is positioned. A deposition material is provided within the apparatus. A plurality of materials, and also oxides, nitrides, or carbides thereof, can be used for deposition onto the substrate. The coated materials can be used in several applications and in several technical fields. For example, substrates for displays are often coated by a physical vapor deposition (PVD) process. Additional applications include insulating panels, organic light emitting diode (OLED) panels, substrates having thin film transistors (TFTs), color filters, or the like.

For the PVD process, the deposition material can exist in a solid state as a target. By bombarding the target with high energy particles, atoms of the target material, i.e. the material to be deposited, are ejected from the target. The atoms of the target material are deposited on the substrate to be coated. In the PVD process, the sputtered material, i.e. the material to be deposited on the substrate, can be arranged in different ways. For example, the target can be made of the material to be deposited, or can have a backing element to which the material to be deposited is fixed. The target comprising the material to be deposited is supported or fixed at a predefined position within the deposition chamber.

Segmented or monolithic targets, such as planar or rotatable targets, can be used for sputtering. Due to the geometry and design of the cathodes, rotatable targets typically have higher utilization and increased operating time than planar targets. The use of rotatable targets can extend service life and reduce costs.

Sputtering can be performed as magnetron sputtering, where a magnet assembly is used to confine the plasma for improved sputtering conditions. Plasma confinement can be used to control the particle distribution of the material to be deposited on the substrate.

Conventional sputter deposition sources have several disadvantages in terms of weight, assembly, cost, and miniaturization, and have been found to be unsuitable for low-damage deposition on sensitive surfaces, such as those having organic light-emitting diodes.

Accordingly, there is a need for improved deposition sources, improved deposition source arrays, and improved deposition apparatuses which can overcome one or more of the shortcomings of the current technology.

In view of the above, a deposition source, a deposition source arrangement, and a deposition apparatus according to the independent claims are provided. Additional aspects, advantages, and features are apparent from the dependent claims, the description, and the accompanying drawings.

According to an aspect of the present disclosure, a deposition source is provided. The deposition source includes a rotatable cathode connected to a first drive. Additionally, the deposition source includes a rotatable magnet assembly provided within the rotatable cathode. The rotatable magnet assembly is connected to a second drive. The first drive and the second drive are provided above the rotatable cathode.

In accordance with a further aspect of the present disclosure, a deposition source array is provided. The deposition source array includes a first deposition source and a second deposition source. The first deposition source includes a first rotatable cathode. The first rotatable cathode is connected to a first drive. Additionally, the first deposition source includes a first rotatable magnet assembly. The first rotatable magnet assembly is provided within the first rotatable cathode. Additionally, the first rotatable magnet assembly is connected to a second drive. The first drive and the second drive are provided above the first rotatable cathode. The second deposition source includes a second rotatable cathode. The second rotatable cathode is connected to a third drive. Additionally, the second deposition source includes a second rotatable magnet assembly. The second rotatable magnet assembly is provided within the second rotatable cathode. Additionally, the second rotatable magnet assembly is connected to a fourth drive. The third drive and the fourth drive are provided above the second rotatable cathode. The second deposition source is arranged parallel to the first deposition source.

In another aspect of the present disclosure, a deposition apparatus is provided. The deposition apparatus includes a vacuum deposition chamber and at least one deposition source. The at least one deposition source includes a rotatable cathode provided within the vacuum deposition chamber. Additionally, the at least one deposition source includes a rotatable magnet assembly provided within the rotatable cathode. Furthermore, the at least one deposition source includes a first drive provided outside and above the vacuum deposition chamber. The first drive is connected to the rotatable cathode. Furthermore, the at least one deposition source includes a second drive provided outside and above the vacuum deposition chamber. The second drive is connected to the rotatable magnet assembly.

Embodiments also relate to apparatus for performing the disclosed methods, including apparatus components for performing each described method aspect. These method aspects may be performed by hardware components, a computer programmed by appropriate software, any combination of the two, or any other manner. Furthermore, embodiments according to the present disclosure also relate to methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for performing all functions of the apparatus.

A more detailed description of the present disclosure, briefly summarized above, can be obtained by reference to the embodiments, in which the above-mentioned features of the present disclosure may be understood in detail. The accompanying drawings relate to embodiments of the present disclosure, which are described below:
Figure 1 shows a schematic side view of a deposition source according to embodiments described herein.
FIGS. 2 and 3 illustrate schematic side views of a deposition source according to additional embodiments described herein.
FIG. 4 shows a schematic front view of a deposition source array according to embodiments described herein.
FIG. 5 shows a schematic plan view of a deposition source array according to embodiments described herein.
FIGS. 6 and 7 show schematic cross-sectional plan views of a deposition apparatus according to embodiments described herein.

Hereinafter, various embodiments of the present disclosure will be described in detail, one or more examples of which are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. Only differences between individual embodiments are described. Each example is provided by way of explanation of the present disclosure and is not intended to be a limitation of the present disclosure. Furthermore, features illustrated or described as part of one embodiment may be used in or in conjunction with other embodiments to yield still further embodiments. The present disclosure is intended to embrace such modifications and variations.

Referring to FIG. 1 as an example, a deposition source (100) according to the present disclosure is described. According to embodiments that may be combined with any other embodiments described herein, the deposition source (100) includes a rotatable cathode (110). Additionally, the deposition source (100) includes a rotatable magnet assembly (120) provided within the rotatable cathode (110). The rotatable cathode (110) is connected to a first drive (131). The rotation of the rotatable cathode is exemplarily indicated by arrow (11) in FIG. 1. The rotatable magnet assembly (120) is connected to a second drive (132). The rotation of the magnet assembly is exemplarily indicated by arrow (12) in FIG. 1. Typically, the rotatable cathode (110) and the rotatable magnet assembly (120) can rotate about the same longitudinal axis (105). Additionally, typically, the longitudinal main axis (105) extends in the vertical direction. The vertical direction V and the horizontal direction H are exemplarily indicated in FIG. 1. Additionally, as illustrated in FIG. 1, the first drive (131) and the second drive (132) are provided above the rotatable cathode (110). Specifically, the first drive (131) and the second drive (132) are provided at the uppermost portion of the deposition source (100).

Providing a deposition source in which both drives, a first drive for the cathode and a second drive for the magnet assembly, are arranged above the cathode has several advantages over prior art. Specifically, the deposition source according to the embodiments described herein can be more compact and have a reduced overall weight. In addition, the more compact design provides the possibility of providing a smaller distance between adjacent deposition sources in a deposition source array having two or more deposition sources. Providing a smaller distance between adjacent deposition sources compared to prior art is beneficial for low-damage deposition on sensitive surfaces, such as surfaces having organic light emitting diodes. In addition, providing both drives of the deposition source above the cathode has advantages in terms of assembly and maintenance. Specifically, the drives can be provided within a drive assembly in which the drives are arranged above each other and mounted on a common mounting structure. The drive assembly can be connected to the rotatable cathode and the rotatable magnet assembly from the top. In addition, the drive assembly can be mounted on an external surface of the top wall of the deposition chamber, which is beneficial for installation as well as maintenance.

Before various additional embodiments of the present disclosure are described in more detail, certain aspects related to certain terms used herein are described.

In the present disclosure, a "deposition source" may be understood as a source configured for material deposition using a sputter deposition process, specifically a magnetron sputtering process. Typically, the deposition source is a vertical deposition source, i.e., has a longitudinal major axis (105) extending in the vertical direction V, as exemplarily illustrated in FIG. 1.

In the present disclosure, a "rotatable cathode" may be understood as a cathode or cathode assembly configured to be rotatable about a longitudinal axis of the cathode. Specifically, a "rotatable cathode" may be understood as a cathode having a rotatable target that is rotatable about a rotational axis of the rotatable target. Typically, the rotational axis of the rotatable target corresponds to the longitudinal axis of the cathode. As exemplarily illustrated in FIG. 1, typically, the longitudinal axis of the cathode corresponds to the longitudinal major axis (105) of the deposition source. The rotatable target may have a curved surface, for example, a cylindrical surface. The rotatable target may be rotated about the rotational axis, which is the axis of the cylinder or tube. The cathode assembly may include a backing tube. A target material forming a target that may include a material to be deposited on a substrate during a coating process may be mounted in the backing tube. Alternatively, the target material may be shaped as a tube without being provided in the backing tube.

In the present disclosure, a "rotatable magnet assembly" may be understood as a magnet assembly configured to be rotatable about a longitudinal axis of a cathode. Typically, the magnet assembly is arranged within the cathode or the cathode assembly. The term "magnet assembly" as used herein may refer to a unit capable of generating a magnetic field. For example, the magnet assembly may be comprised of permanent magnets. The permanent magnets may be arranged within the cathode or the sputter target, whereby charged particles may be trapped within the generated magnetic field, for example, within a region above the sputter target. In some embodiments, the magnet assembly may include a magnet yoke. Additionally, the magnet assembly may be surrounded by a target material. Specifically, the magnet assembly may be arranged such that target material sputtered by the cathode is sputtered toward the substrate. It should be understood that the magnet assembly may generate a magnetic field. The magnetic field may cause one or more plasma regions to be formed near the magnetic field during the sputter deposition process. The location of the magnet assembly within the cathode affects the direction in which the target material is sputtered from the cathode during the sputter deposition process. The magnet assembly can confine the plasma during sputtering. Therefore, an improved sputtering process can be provided with the magnet assembly.

Accordingly, the deposition embodiments described herein are typically sputter deposition sources. It should be noted that sputtering can also be used to deposit materials on sensitive substrates, e.g., previously processed substrates. Thus, sputtering, and specifically magnetron sputtering, can be used as a kind of finishing process to further process already processed substrates differently. To achieve processing of sensitive substrates, e.g., substrates comprising OLED layers, several adaptations can be made to the sputtering process, e.g., the positioning of the rotatable sputtering cathodes, i.e., the arrangement and/or orientation of the magnet assemblies of the cathode assembly can be adapted such that the low energy spray coating occurs towards the sensitive substrate, as exemplarily illustrated with reference to FIGS. 6 and 7 .

In the present disclosure, a "drive" may be understood as an actuator configured to provide motion, specifically rotation. For example, the drive may be an electric motor. Thus, as exemplarily illustrated in FIG. 1 , typically, a first drive (131) as described herein is configured to move, specifically rotate, a rotatable cathode (110). Thus, typically, a second drive (132) as described herein is configured to move, specifically rotate, a magnet assembly (112).

In the present disclosure, the term "vertical" may be understood as the direction of the force of gravity. The term "vertical" may be understood as substantially vertical, i.e. vertical with a tolerance T of T ≤ ±15°, specifically T ≤ ±10°, more specifically T ≤ ±5°, for example T ≤ ±1°. In the present disclosure, the term "horizontal" may be understood as a direction perpendicular to the vertical direction.

Referring to FIG. 1 as an example, in embodiments that may be combined with any of the other embodiments described herein, the second drive (132) is arranged above the first drive (131). Specifically, the second drive (132) is arranged above the first drive (131), thereby minimizing the horizontal installation space. Accordingly, the outer lateral contour of the first drive (131) may be aligned with the outer lateral contour of the second drive (132). In this regard, for better understanding, reference is made to FIG. 5, which shows a plan view of a deposition source array (100) having two deposition sources (100A, 100B) according to embodiments described herein, wherein the drives (132, 134) for the magnet assemblies (120A, 120B) are arranged above the drives for the cathodes (110A, 110B) (both indicated in dashed lines 131, 133).

In embodiments that may be combined with any of the other embodiments described herein, the second drive (132) is connected to the rotatable magnet assembly (120) via a shaft (125), as exemplarily illustrated in FIG. 2. Typically, the first drive (131) is connected to the rotatable cathode (110) via a tube (135). Typically, the shaft (125) extends into the interior (111) of the rotatable cathode (110). More specifically, as exemplarily illustrated in FIG. 2, the shaft (125) may extend into the interior (111) of the rotatable cathode (110) via the tube (135).

Referring to FIG. 2 as an example, in accordance with an embodiment that may be combined with any of the other embodiments described herein, a tube (135) may be connected to a first pulley (111). The first pulley (111) may be coupled to a second pulley (112), for example, via a first belt (115). Typically, the second pulley (112) is coupled to a first actuator (131A). The first actuator (131A) is configured to rotate the second pulley (112). Accordingly, it should be understood that the rotational motion provided by the first actuator (131A) may be transmitted to the rotatable cathode (110).

According to embodiments that may be combined with any of the other embodiments described herein, the shaft (125) may be coupled to a third pulley (113). The third pulley (113) may be coupled to a fourth pulley (114), for example, via a second belt (116). Typically, the fourth pulley (114) is coupled to a second actuator (132A). The second actuator (132A) is configured to rotate the fourth pulley (114). Accordingly, it should be understood that the rotational motion provided by the second actuator (132A) may be transmitted to the rotatable magnet assembly (120).

As exemplarily illustrated in FIG. 2, the rotation axis of the first pulley (111) and the rotation axis of the third pulley (113) may correspond to the longitudinal main axis (105) of the deposition source. Typically, the longitudinal main axis (105) is the rotation axis of the rotatable cathode (110). In addition, as exemplarily illustrated in FIG. 2, the rotation axis (112R) of the second pulley (112) and the rotation axis (114R) of the fourth pulley are typically parallel to the longitudinal main axis (105) of the deposition source.

In accordance with embodiments that may be combined with any of the other embodiments described herein, the shaft (125) includes a coolant inlet (126) provided at an upper portion of the shaft (125), as schematically illustrated in FIG. 2. Typically, the coolant inlet (126) is in fluid communication with a cooling system for cooling the cathode. For example, the rotatable cathode (110) may include a coolant space or a coolant receiving enclosure. The coolant receiving enclosure may receive a coolant provided through the coolant inlet (126). The coolant may be a liquid coolant, such as water. Other liquid coolants suitable for cooling the cathode may also be used. Additionally, as schematically illustrated in FIG. 2, a coolant outlet (128) may be provided at an upper portion of the shaft (125) and/or an upper portion of the tube (135). The coolant outlet (128) may be used to discharge used coolant from the cooling system. Providing a coolant inlet (126) and/or a coolant outlet (128) at the upper portion of the shaft (125) and/or the upper portion of the tube (135) has advantages from a maintenance perspective.

According to embodiments which may be combined with any of the other embodiments described herein, the coolant inlet and coolant outlet may be provided by fluid connections provided in a stationary housing surrounding an upper portion of the shaft (125) and/or an upper portion of the tube (135), for example the first casing (153) and/or the second casing (154) described herein. Accordingly, coolant may be introduced and/or discharged from the shaft (125) and/or the tube (135) through fluid connections provided in the stationary housing (not explicitly shown). Typically, a seal is provided at the interface between the coolant inlet/coolant outlet and the fluid connections provided in the upper portion of the shaft (125) and/or the upper portion of the tube (135).

Also, with reference to FIG. 2 as an example, and in accordance with embodiments that may be combined with any of the other embodiments described herein, the deposition source includes a mounting plate (140) configured to be mounted to an upper wall (311) of a vacuum deposition chamber. Specifically, the mounting plate (140) may be mounted on an upper outer surface of the upper wall (311) of the vacuum deposition chamber. Typically, the mounting plate (140) is provided between the rotatable cathode (110) and the first drive (131). More specifically, the mounting plate (140) may be arranged between the rotatable cathode (110) and the first casing (153), as exemplarily described with reference to FIG. 3. Typically, the mounting plate (140) is made of an insulating material. Specifically, the mounting plate (140) may be made of an insulating polymer material, such as polyether ether ketone (PEEK).

Referring to FIG. 3 as an example, and in accordance with embodiments that may be combined with any of the other embodiments described herein, the deposition source includes a mounting assembly (150) on which a first drive (131) and a second drive (132) are mounted. Thus, the mounting assembly (150) may be a common mounting structure for the first drive (131) and the second drive (132). The mounting assembly (150) on which the first drive (131) and the second drive (132) are mounted may be referred to as a drive assembly. Typically, as schematically illustrated in FIG. 3, the mounting assembly (150) includes a first mounting element (151) and a second mounting element (152). The first mounting element (151) is arranged at least partially between the first drive (131) and the second drive (132). Specifically, the first mounting element (151) may be provided between the first casing (153) and the second casing (154), as exemplarily illustrated in FIG. 3. Typically, the first casing (153) is provided around the tube (135). The second casing (154) is typically provided around the shaft (125). The second casing (154) may be arranged over the first casing (153).

As schematically illustrated in FIG. 3, the second mounting element (152) is typically connected to the first mounting element (151). Typically, both the first drive (131) and the second drive (132) are mounted to the second mounting element (152). For example, the first drive (131) may be mounted to the second mounting element (152) by the first fastening element (155). The second drive (132) may be mounted to the second mounting element (152) by the second fastening element (156).

According to embodiments that may be combined with any of the other embodiments described herein, the first mounting element (151) is arranged perpendicular to the second mounting element (152). Specifically, as exemplarily illustrated in FIG. 3 , the first mounting element (151) has a main extension in the horizontal direction and the second mounting element (152) has a main extension in the vertical direction. Typically, the main extension of the first mounting element (151) is perpendicular to the main extension of the second mounting element (152). The term "perpendicular" may be understood as substantially perpendicular, i.e. perpendicular with a tolerance T of T ≤ ±15°, specifically T ≤ ±10°, more specifically T ≤ ±5°, for example T ≤ ±1°.

Referring to FIG. 3 as an example, and in accordance with embodiments that may be combined with any of the other embodiments described herein, the deposition source (100) includes a first sensor (161) for detecting a rotational movement and/or position of the rotatable cathode (110). For example, the first sensor (161) may be attached to the first casing (153), specifically, to the interior of the first casing (153). Thus, it should be appreciated that the first sensor (161) may be configured and arranged to detect the rotation of the tube (135), and the rotation of the cathode (110) connected to the tube (135). Additionally or alternatively, the deposition source (100) includes a second sensor (162) for detecting a rotational position of the magnet assembly (120). For example, the second sensor (162) may be attached to the second casing (154), specifically, to the interior of the second casing (154). Accordingly, it should be understood that the second sensor (162) may be configured and arranged to detect the rotation of the shaft (125) and thereby detect the rotation of the magnet assembly (120) connected to the shaft (125).

Referring to FIGS. 4 and 5 as examples, a deposition source array (200) according to the present disclosure is described. FIG. 4 shows a schematic front view of the deposition source array (200), and FIG. 5 shows a schematic plan view of the deposition source array (200).

According to embodiments that may be combined with any of the other embodiments described herein, the deposition source array (200) includes two or more deposition sources, for example, a first deposition source (100A) and a second deposition source (100B). The second deposition source (100B) is arranged parallel to the first deposition source (100A). The term "parallel" may be understood as substantially parallel, i.e. parallel with a tolerance T of T ≤ ±15°, specifically T ≤ ±10°, more specifically T ≤ ±5°, for example T ≤ ±1° from perfect parallel.

As exemplarily illustrated in FIGS. 4 and 5, the first deposition source (100A) includes a first rotatable cathode (110A) connected to a first drive (131). In FIG. 5, the connection between the first drive (131) and the first rotatable cathode (110A) is only schematically represented by a line. Additionally, the first deposition source (100A) includes a first rotatable magnet assembly (120A). The first rotatable magnet assembly (120) is provided within the first rotatable cathode (110A). Additionally, the first rotatable magnet assembly (120A) is connected to a second drive (132). In FIG. 5, the connection between the second drive (132) and the first rotatable magnet assembly (120A) is only schematically represented by a line. The first drive (131) and the second drive (132) are provided above the first rotatable cathode (110A). Specifically, the second drive (132) is arranged above the first drive (131) (indicated by a dotted line).

It should be understood that the first deposition source (100A) may be configured according to any of the embodiments of the deposition source (100) exemplarily described with reference to FIGS. 1 to 3.

As exemplarily illustrated in FIGS. 4 and 5, the second deposition source (100B) includes a second rotatable cathode (110B) connected to a third drive (133). In FIG. 5, the connection between the third drive (133) and the second rotatable cathode (110B) is only schematically represented by a line. Additionally, the second deposition source (100B) includes a second rotatable magnet assembly (120B) provided within the second rotatable cathode (110B). The second rotatable magnet assembly (120B) is connected to a fourth drive (134). In FIG. 5, the connection between the fourth drive (134) and the second rotatable magnet assembly (120B) is only schematically represented by a line. The third drive (133) and the fourth drive (134) are provided above the second rotatable cathode (110B). Specifically, the fourth drive (134) is arranged above the third drive (133) (indicated by a dotted line).

It should be understood that the second deposition source (100B) may be configured according to any of the embodiments of the deposition source (100) as exemplarily described with reference to FIGS. 1 to 3, wherein the third drive (133) may correspond to the first drive (131) of the deposition source (100) and the fourth drive (134) may correspond to the second drive (132) of the deposition source (100) of FIGS. 1 to 3.

With reference to FIGS. 4 and 5 as examples, and in accordance with embodiments that may be combined with any other embodiments described herein, the first drive (131) includes a first body (131B), the second drive (132) includes a second body (132B), the third drive (133) includes a third body (133B), and the fourth drive (134) includes a fourth body (134B). Each of the first body (131B), the second body (132B), the third body (133B), and the fourth body (134B) extends in a direction opposite to a main deposition direction (10) of the deposition source array (200). The main deposition direction (10) is exemplarily shown in FIG. 5. Accordingly, advantageously, the lateral distance (D) between the first deposition source (100A) and the second deposition source (100B) can be minimized, so that the Mura effect can be reduced or even eliminated.

With reference to FIGS. 4 and 5 as examples, according to embodiments that may be combined with any other embodiments described herein, the first deposition source (100A) has a first vertical longitudinal axis (105A) and the second deposition source (100B) has a second vertical longitudinal axis (105B). The second vertical longitudinal axis (105B) is provided at a distance (D) less than 235 mm from the first longitudinal axis (105A).

According to embodiments that may be combined with any of the other embodiments described herein, as exemplarily illustrated in FIG. 4, the first deposition source (100A) includes a first mounting plate (140A) configured to be mounted on an upper wall (311) of the vacuum deposition chamber, specifically an upper outer surface of the upper wall (311) of the vacuum deposition chamber. Typically, the first mounting plate (140A) is provided between the first rotatable cathode (110A) and the first drive (131). More specifically, the first mounting plate (140A) may be arranged between the first rotatable cathode (110A) and the first casing (153), as exemplarily illustrated with respect to the mounting plate (140) with reference to FIG. 3. Similarly, the second deposition source (100B) may include a second mounting plate (140B) configured to be mounted on an upper wall (311) of the vacuum deposition chamber, specifically an upper outer surface of the upper wall (311) of the vacuum deposition chamber. Typically, the second mounting plate (140B) is provided between the second rotatable cathode (110B) and the third drive (133). More specifically, the second mounting plate (140B) may be arranged between the second rotatable cathode (110B) and a casing provided around a tube connecting the third drive (133) to the second rotatable cathode (110B), for example, a third casing (not explicitly shown). Accordingly, it should be understood that the second mounting plate (140B) and the third casing may be arranged and configured according to the first casing (153) and the mounting plate (140) as exemplarily described with reference to FIG. 3, with only slight modifications as necessary.

In view of the embodiments described herein, it should be appreciated that a deposition apparatus may be provided according to other aspects of the present disclosure. According to embodiments that may be combined with any of the other embodiments described herein, the deposition apparatus (300) includes a vacuum deposition chamber (310) and at least one deposition source (100). Specifically, the at least one deposition source is a deposition source (100) according to any of the embodiments described herein, such as those described with reference to FIGS. 1-3 . The at least one deposition source (100) includes a rotatable cathode (110) provided within the vacuum deposition chamber. Additionally, the at least one deposition source (100) includes a rotatable magnet assembly (120) provided within the rotatable cathode (110). Additionally, the at least one deposition source (100) includes a first drive (131) provided outside and above the vacuum deposition chamber (310). Specifically, the first drive (131) may be provided on an outer surface of an upper wall (311) of the vacuum deposition chamber, as exemplarily illustrated in FIGS. 2 and 3. The first drive (131) is connected to the rotatable cathode (110). Additionally, at least one deposition source (100) includes a second drive (132). The second drive (132) is provided outside and above the vacuum deposition chamber (310). Specifically, the second drive (132) is arranged above the first drive (131), as exemplarily illustrated in FIGS. 1 to 3. The second drive (132) is connected to the rotatable magnet assembly (120).

According to embodiments that may be combined with any other embodiments described herein, at least one deposition source (100) comprises two or more deposition sources providing a deposition source array (200) according to any of the embodiments described herein, such as specifically described with reference to FIGS. 4 and 5.

FIGS. 6 and 7 illustrate schematic cross-sectional plan views of an exemplary deposition apparatus (300) including a deposition source array (200) having a first deposition source (100A) and a second deposition source (100B) according to embodiments described herein. As exemplarily illustrated in FIGS. 6 and 7 , the first magnet assembly (120A) can include at least three magnetic poles directed toward a plasma confinement (124) provided by the first magnet assembly. Accordingly, the second magnet assembly (120B) can include at least three magnetic poles directed toward the plasma confinement (124) provided by the second magnet assembly (120B). In the embodiments illustrated in FIGS. 6 and 7 , the first magnet assembly (120A) and the second magnet assembly (120B) each include three magnetic poles directed toward the plasma confinement provided by their respective magnet assemblies.

Also, as exemplarily illustrated in FIGS. 6 and 7, the first rotatable cathode (110A) and the second rotatable cathode (110B) are positioned in a vacuum deposition chamber (310). The term "vacuum" as used herein may be understood to mean a technical vacuum having a vacuum pressure of, for example, less than 10 mbar. Typically, the pressure within a vacuum chamber as described herein may be from 10 ^-5 mbar to about 10 ^-8 mbar, more typically from 10 ^-5 mbar to 10 ^-7 mbar, and even more typically from about 10 ^-6 mbar to about 10 ^-7 mbar.

Additionally, from FIGS. 6 and 7, it is understood that the deposition device (300) is configured to deposit at least one material on a substrate (15). The substrate (15) may be provided in a substrate holder (16). The substrate holder may also be referred to as a substrate carrier.

The term "substrate" as used herein encompasses both inflexible substrates and flexible substrates. Examples of inflexible substrates include glass substrates, glass plates, wafers, or slices of transparent crystal such as sapphire or the like. Examples of flexible substrates include webs or foils. In yet other embodiments that may be combined with other embodiments described herein, the transport of the substrate and/or substrate carrier may each be provided by a magnetic levitation system. Specifically, the substrate carrier may be levitated or held in place by magnetic forces without or with reduced mechanical contact and may be moved by magnetic forces.

At least one material to be deposited can comprise a conductive or semiconductor material. For example, the at least one material can be or include a metal, a metal oxide (MOx), or a transparent conductive oxide (TCO). The metal can be, for example, Ag, Mg, Al, Yb, Ca or Li. The metal oxide can be, for example, IGZO, AlO, MoO or WOx. The TCO can be, for example, indium zinc oxide (IZO), indium tin oxide (ITO), or aluminum-doped zinc oxide (AZO).

To coat a substrate, it should be understood that the substrate can be continuously moved past at least one deposition source having rotatable cathodes during coating (“dynamic coating”). Alternatively, the substrate can remain essentially in a constant position during coating (“static coating”). Substrate sweeping or substrate wobbling may also be possible. Embodiments described in the present disclosure relate to both dynamic and static coating processes.

Referring to FIGS. 6 and 7 as examples, the deposition apparatus (300) can include an adjustable aperture (315) provided within a shield or between at least two shields, specifically as a gap between at least two shields. The shields provided in the vacuum deposition chamber (310) can protect a rear portion of the deposition chamber. For example, the aperture (315) can be provided between a first shield (321) and a second shield (322), as shown in the depicted embodiment. Specifically, the first shield (321) is provided between the first rotatable cathode (110A) and the deposition region. The deposition region should be specifically understood as the region where the substrate (15) is to be positioned during deposition. Similarly, the second shield (322) can be provided between the second rotatable cathode (110B) and the deposition region.

In the context of the present disclosure, the aperture size should be understood specifically as the size of the gap between the shields, more specifically as the distance between the first shield (321) and the second shield (322). The size of the aperture (315) can be adjusted by changing the distance between the shields. As indicated by the arrows, at least one of the first shield (321) and the second shield (322) can be moved specifically in a direction parallel to the substrate plane of the substrate (15). Thus, the size of the aperture (315) can be adjusted by moving at least one of the shields. Thus, the deposition apparatus is particularly suitable for low damage deposition (LDD) on sensitive surfaces.

According to embodiments that may be combined with any other embodiments described herein, the deposition apparatus includes a controller configured to control the deposition apparatus such that a method of depositing at least one material on a substrate as described herein is performed. Specifically, the controller is configured to control drives of the deposition sources according to embodiments exemplarily described with reference to FIGS. 1 to 5.

The controller may include a central processing unit (CPU), memory, and, for example, support circuits. To facilitate control of the deposition apparatus, the CPU may be any form of general-purpose computer processor that can be used in an industrial environment to control various components and sub-processors. The memory is coupled to the CPU. The memory or computer-readable medium may be one or more readily available memory devices, such as random access memory, read-only memory, a hard disk, or any other form of digital storage, either local or remote. The support circuits may be coupled to the CPU to support the processor in a conventional manner. The circuits may include cache, power supplies, clock circuits, input/output circuitry and related subsystems, and the like.

The control instructions are typically stored in memory as a software routine or program. The software routine or program may also be stored and/or executed by a second CPU located remotely from the hardware controlled by the CPU. The software routine or program, when executed by the CPU, transforms a general-purpose computer into a special-purpose computer (controller) that controls the apparatus for depositing a material according to any of the embodiments of the present disclosure.

The methods of the present disclosure may be implemented as software routines or programs. At least some of the method operations disclosed herein may be performed by hardware, as well as by a software controller. Accordingly, the embodiments may be implemented as software running on a computer system, as hardware as an application specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. The controller may execute or perform a method of depositing a material on a substrate according to embodiments of the present disclosure. The methods described herein may be performed using computer programs, software, computer software products, and interrelated controllers, which may have a CPU, memory, a user interface, and input and output devices that communicate with corresponding components of an apparatus for depositing a material.

In accordance with embodiments that may be combined with any of the other embodiments described herein, a method of depositing at least one material on a substrate comprises at least one of a first deposition and a second deposition. An example of a configuration of the deposition apparatus (300) during the first deposition is illustrated in FIG. 6 . The first deposition comprises: sputtering from first and second rotatable cathodes through an adjustable aperture (315), the aperture having a size less than a first size. The first magnet assembly (120A) provides a plasma confinement (124) in a first direction toward the second rotatable cathode (120B), specifically during deposition of the material. The second magnet assembly (120B) provides a plasma confinement (124) in a second direction toward the rotatable cathode (120A), specifically during deposition of the material. That is, during the first deposition, the magnet assemblies can be in a facing target sputtering configuration.

In embodiments, the aperture can be smaller than the first size. The first size is, for example, 40 mm, 70 mm, 100 mm or 130 mm. During the first deposition, the aperture (315) can have a size of, for example, 50 mm, as illustrated in FIG. 6. In general, the aperture can have a size of, for example, 30 mm, 50 mm or 70 mm during the first deposition. The aperture can have a size greater than, for example, 5 mm, 15 mm or 20 mm during the first deposition. The size of the aperture can be constant during the first deposition, or can vary, specifically, can increase.

The feature that the aperture has a size smaller than the first size during the first deposition has the advantage that spatial variation of the deposition rate on different parts of the substrate can be reduced. Specifically, simultaneous deposition of material at very different deposition rates on different parts of the substrate can be avoided. For example, when the plasma confinement directions are directly facing each other, a region of the substrate facing the central region between the rotatable cathodes would otherwise be exposed to a much higher deposition rate than other parts of the substrate. An aperture having a size smaller than the first size during the first deposition is beneficial for depositing material with a uniform thickness.

The feature that the plasma confinements are provided in a first direction toward the second rotatable cathode and in a second direction toward the first rotatable cathode has the advantage that soft deposition or low damage deposition (LDD) can be achieved. For example, impact of high energy particles on the substrate can be reduced. Damage to the substrate, specifically to a coating on the substrate, can be mitigated. This is advantageous in particular with respect to deposition on sensitive substrates or layers, more particularly with respect to deposition on substrates having a sensitive coating. The first deposition can be understood as a protective deposition or a seed deposition.

The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle less than a first value. In the context of the present disclosure, "substrate plane" specifically refers to a plane of the substrate (15) on which the material is deposited. The first value can be, for example, 40°, 30°, 20°, or 10°. As illustrated in FIG. 6 , the first and second directions can be parallel to the substrate plane. That is, the angle of departure from an orientation parallel to the substrate plane can be 0°. In embodiments, the first direction and the second direction deviate from being parallel to the substrate plane by an angle less than 40°, 30°, or 20° toward the substrate, and by an angle less than 10° away from the substrate.

An advantageous configuration can be achieved in which the substrate is bombarded by the energetic particles while at least a satisfactory amount of material is deposited on the substrate. If any of the first and second directions deviates significantly from being parallel to the substrate plane in a direction towards the substrate, unfavorable bombardment of the substrate by the energetic particles may ensue. If any of the first and second directions deviates significantly from being parallel to the substrate plane in a direction away from the substrate, an unsatisfactory low deposition rate on the substrate may ensue. Additionally or alternatively, waste of target material may occur.

The first direction may correspond to a first angle, specifically a first polar angle of the polar coordinate system. A reference point of the polar coordinate system, specifically a pole, may be located on the rotation axis of the rotatable cathode. The reference direction of the polar coordinate system may be perpendicular to the rotation axis of the rotatable cathode. A deviation of the first direction from being parallel to the substrate plane may represent a polar coordinate system of the first rotatable cathode. A deviation of the second direction from being parallel to the substrate plane may represent a polar coordinate system of the second rotatable cathode.

In embodiments, the magnets included in each of the magnet assemblies can be offset from being parallel to one another. That is, the magnets of each of the magnet assemblies can surround an opening angle. Specifically, at least one of the magnets can be offset from being parallel to a central axis or axis of symmetry of the magnet assembly by, for example, more than 3°, 6°, or 10°. At least one magnet can be offset from being parallel to the central axis or axis of symmetry by, for example, less than 30°, 25°, or 15°.

For example, when depositing electrodes for OLEDs, materials may need to be deposited on highly sensitive layers. For some materials, particularly transparent conductive oxides or metal oxides, soft deposition via conventional techniques such as evaporation may not be possible. Embodiments of the present disclosure use a facing target design to address this. By using rotatable cathodes according to embodiments of the present disclosure, target surface contamination can be mitigated and system uptimes can be increased. Additionally, low-damage deposition as described herein can reduce the number of high-energy particles, such as sputter particles, negative ions, and electrons, that impinge on the substrate. Temperature variations on or near the substrate surface can be reduced. Specifically, lower temperatures on or near the substrate surface can be achieved.

In accordance with embodiments that may be combined with any of the other embodiments described herein, the method comprises a second deposition on top of the first deposition. Specifically, the second deposition provides material to a region above the material provided via the first deposition. In this context, the term "above" specifically relates to a configuration in which the substrate is positioned below the material provided via the first deposition. For example, at least one additional deposition may be provided between the first deposition and the second deposition. During the at least one additional deposition, the plasma confinement directions and the size of the aperture may be different than during the first and/or second depositions. In embodiments, the second deposition may be provided directly above the first deposition.

An example of a configuration of the deposition apparatus (300) during the second deposition is illustrated in FIG. 7. The second deposition comprises: sputtering from first and second rotatable cathodes through an aperture (315), the aperture having at least a second size, the second size being greater than the first size. The first magnet assembly (120A) provides a plasma confinement (124) in a third direction. The second magnet assembly (120B) provides a plasma confinement (124) in a fourth direction. At least one of the third or fourth directions is offset from being parallel to the substrate plane by at least a second value, the second value being greater than the first value.

In embodiments, the aperture can be as large as or larger than the second size. The second size can be, for example, 50 mm, 90 mm, 130 mm or 180 mm. The second size can be at least, for example, 5%, 25% or 35% larger than the first size. Sputtering through an aperture having a larger size can lead to an increased deposition rate. During the second deposition, the aperture (315) as illustrated in FIG. 7 can have a size of, for example, 140 mm. Typically, the aperture can have a size of, for example, 120 mm, 140 mm or 160 mm during the second deposition. Specifically, the first size is associated with a first surface area of the aperture, and the second size is associated with a second surface area of the aperture. More specifically, the second surface area is larger than the first surface area. The aperture may have a size smaller than, for example, 220 mm, 165 mm or 125 mm during the second deposition.

In embodiments, as mentioned above, at least one of the third or fourth directions can be offset from being parallel to the substrate plane by at least a second value. The second value can be, for example, 15°, 30°, 50° or 70°. The second value can be at least, for example, 5%, 25% or 35% larger than the first value. The first value is specifically related to the first and second directions as defined above. The third and fourth directions can both be offset from being parallel to the substrate plane by at least the second value. As illustrated in FIG. 7, the third and fourth directions can be offset from being parallel to the substrate plane by, for example, an angle of 60°. In general, the directions can be offset from being parallel to the substrate plane by, for example, an angle of 50°, 60° or 70°. The directions may deviate from the plane of the substrate by, for example, less than 100°, 95° or 85°.

By changing the plasma confinement directions, i.e. the directions in which the plasma confinement members are provided, the deposition rate can be increased. The plasma confinement direction can be changed specifically by changing the position of the magnet assembly providing the plasma confinement member, more specifically by rotating the magnet assembly. Changing the plasma confinement directions can also be understood as changing the sputtering direction. The aperture size can be increased simultaneously with the changing of the plasma confinement directions. By increasing the size of the aperture, the deposition rate can be increased.

When the plasma confinement directions have a large component directed toward the substrate, the uniformity of the deposition rate can be relatively high compared to, for example, when the plasma confinement directions face each other in a direction parallel to the substrate. When the plasma confinement directions have a large component directed toward the substrate, the material can be deposited with a uniform thickness without specifically limiting the aperture size to small values. High deposition rates can be achieved without compromising the thickness distribution of the deposited material.

During the first deposition or initial deposition, specifically the material deposited on the OLED material can act as a protection, specifically a protective layer, before the deposition is performed at higher material throughput, i.e. higher deposition rate. The deposition time can be reduced compared to deposition by only opposite target sputtering. Productivity can be increased. The deposition environment, specifically the exposure of the substrate to residual gas contaminants due to sputtering and to ultraviolet radiation, can be reduced.

In embodiments, the plasma confinement directions of the first and second magnet assemblies are changed incrementally or stepwise between the first and second depositions. Specifically, the positions of the first and second magnet assemblies are changed incrementally or stepwise between the first and second depositions. During the change in the plasma confinement directions, material can be deposited on the substrate, and specifically can continue to be deposited. The aperture size can be changed, and specifically can be increased, simultaneously with the change in the plasma confinement directions.

In embodiments, the apertures, specifically the shields providing the apertures, are electrically insulated. More specifically, the shields can have a defined electrical potential. The shields can be cooled to a temperature of, for example, less than 85° C., 80° C. or 60° C. The temperature can be greater than, for example, 20° C., 30° C. or 40° C. The shields can include flat surfaces. At least one surface of the shields can be roughened, specifically to prevent flaking.

In view of the above, it should be understood that, compared to the state of the art, embodiments of the present disclosure advantageously provide a deposition source, an improved deposition source arrangement, and an improved deposition apparatus. Specifically, embodiments of the present disclosure are improved in terms of miniaturization, assembly, and maintenance. Furthermore, embodiments of the present disclosure advantageously provide a reduction in the mura effect and are well suited for low-damage deposition (LDD) on sensitive surfaces, such as surfaces having organic light emitting diodes.

While the foregoing is directed to embodiments, other and further embodiments may be made without departing from the basic scope, and the scope is determined by the claims that follow.

Claims (15)

As a deposition source (100),
- A rotatable cathode (110) connected to the first drive (131); and
- A rotatable magnet assembly (120) provided within the rotatable cathode (110) and connected to a second drive (132)
A deposition source (100) comprising: a first drive (131) and a second drive (132) provided above the rotatable cathode (110). In the first paragraph, the second drive (132) is arranged above the first drive (131), the deposition source (100). A deposition source (100) in claim 1 or 2, wherein the second drive (132) is connected to the rotatable magnet assembly (120) via a shaft (125) extending into the interior (111) of the rotatable cathode (110). In the third paragraph, the shaft (125) includes a coolant inlet (126) provided at an upper portion of the shaft (125), the coolant inlet (126) being in fluid communication with a cooling system for cooling the cathode (110), the deposition source (100). A deposition source (100) further comprising a mounting plate (140) configured to be mounted on an upper wall (311) of a vacuum deposition chamber, wherein the mounting plate (140) is provided between the rotatable cathode (110) and the first drive (131), in any one of claims 1 to 4. In the fifth paragraph, the mounting plate (140) is a deposition source (100) made of an insulating material, specifically an insulating polymer material, more specifically polyether ether ketone. A deposition source (100) according to any one of claims 1 to 5, further comprising a mounting assembly (150) having a first mounting element (151) and a second mounting element (152), wherein the first mounting element (151) is arranged at least partially between the first drive (131) and the second drive (132), the second mounting element (152) is connected to the first mounting element (151), and the first drive (131) and the second drive (132) are mounted on the second mounting element (152). In the seventh paragraph, the first mounting element (151) is arranged vertically to the second mounting element (152), and specifically, the first mounting element (151) has a main extension in a horizontal direction, and the second mounting element (152) has a main extension in a vertical direction, the deposition source (100). A deposition source (100) according to any one of claims 1 to 6, further comprising at least one of a first sensor (161) for detecting rotational movement and/or position of the rotatable cathode (110), and a second sensor (162) for detecting rotational movement and/or position of the magnet assembly (120). As a deposition source arrangement (200),
- 1st deposition source (100A); and
- Second deposition source (100B)
Including,
The above first deposition source is:
- a first rotatable cathode (110A) connected to the first drive (131), and
- A first rotatable magnet assembly (120A) provided within the first rotatable cathode (110A) and connected to a second drive (132)
, the first drive (131) and the second drive (132) are provided above the first rotatable cathode (110A);
The second deposition source is:
- a second rotatable cathode (110B) connected to the third drive (133), and
- A second rotatable magnet assembly (120B) provided within the second rotatable cathode (110B) and connected to the fourth drive (134)
, the third drive (133) and the fourth drive (134) are provided above the second rotatable cathode (110B),
A deposition source array (200) in which the second deposition source (100B) is arranged parallel to the first deposition source (100A). In the 10th paragraph, the first drive (131) includes a first body (131B), the second drive (132) includes a second body (132B), the third drive (133) includes a third body (133B), and the fourth drive (134) includes a fourth body (134B), and each of the first body (131B), the second body (132B), the third body (133B), and the fourth body (134B) extends in a direction opposite to the main deposition direction (10) of the deposition source array, the deposition source array (200). A deposition source array (200) in claim 10 or 11, wherein the first deposition source (100A) has a first vertical longitudinal main axis (105A), and the second deposition source (100B) has a second vertical longitudinal main axis (105B) provided at a distance (D) less than 235 mm from the first longitudinal main axis (105A). A deposition source array (200) according to any one of claims 10 to 12, wherein each of the first deposition source (100A) and the second deposition source (100B) is a deposition source according to any one of claims 1 to 7. As a deposition device (300),
- Vacuum deposition chamber (310), and
- At least one deposition source (100)
, wherein at least one deposition source comprises:
- A rotatable cathode (110) provided inside the vacuum deposition chamber;
- A rotatable magnet assembly (120) provided within the rotatable cathode;
- a first drive (131) provided outside the vacuum deposition chamber (310) and above the vacuum deposition chamber, the first drive (131) being connected to the rotatable cathode (110), and
- A second drive (132) provided outside the vacuum deposition chamber (310) and above the vacuum deposition chamber - The second drive (132) is connected to the rotatable magnet assembly (120) -
A deposition device (300) comprising: In claim 13, a deposition device (300) wherein the at least one deposition source (100) comprises two or more deposition sources providing a deposition source array (200) according to any one of claims 10 to 13.

Images