KR20250102564A - Battery electrolyte leak detection using battery electrolyte leak detection sensor - Google Patents

Abstract

A battery electrolyte leak detection sensor including a semiconductor-type leak detection structure and a battery leak detection system using the same are provided. The leak detection sensor and the leak detection system of the present invention include one or more base material deposits formed on a Si series wafer substrate in the sensor, and one or more types of sensitive materials are deposited on the one or more base material deposits so as to effectively detect one or more preset target detection materials.

Description

{BATTERY ELECTROLYTE LEAK DETECTION USING BATTERY ELECTROLYTE LEAK DETECTION SENSOR}

The present invention relates to a battery electrolyte leak detection structure, a leak detection sensor including the same, and a battery electrolyte leak detection system having the sensor. More specifically, the present invention relates to a battery electrolyte leak detection sensor including a semiconductor-type leak detection structure, and a battery leak detection system using the same.

Recently, with the rapid spread of electric vehicles, laptops, and mobile communication devices, the need for lightweight, large-capacity power supplies that can be recharged is increasing.

Following this trend, nickel-metal hydride (Ni-MH) batteries, lithium (Li) batteries, and lithium-ion (Li-ion) batteries, which charge and discharge electricity by ionizing the electrolyte and generating an electromotive force between the electrodes, are being used, and most of these batteries are called secondary batteries.

Secondary batteries are usually rechargeable and can be made small and large in size. They are classified by appearance into cylindrical batteries, square batteries, and pouch batteries. Depending on the need, secondary batteries of various shapes are used where needed.

Conventional secondary batteries, such as the above, operate by generating electromotive force by generating ions from an electrolyte injected between the positive and negative electrodes and moving between the electrodes, thereby causing charging and discharging.

Accordingly, the secondary battery has a sealed structure that can prevent loss of electrolyte that affects charge/discharge capacity and prevent leakage of electrolyte by considering the generation of internal pressure.

The biggest problem with these secondary batteries is the thermal runaway phenomenon caused by continuous mechanical, electrical, and thermal stimulation from the outside. The thermal runaway phenomenon occurs when the internal electrolyte vaporizes when the secondary battery fails to manage its heat, causing the pressure inside the sealed secondary battery to increase, damaging the battery cell, and igniting the entire cell with flammable gases and electrolyte gases. This ultimately causes a fire. This can lead to loss of life and property.

Figure 1 is a graph for explaining thermal runaway of a secondary battery. As shown in Figure 1, when overheating (thermal abuse) of a battery occurs, the pressure inside the battery (battery internal pressure) increases rapidly over time due to vaporization of the internal electrolyte, and as a result, the battery is damaged and the vaporized internal electrolyte is ejected (1st venting and gas diffusion).

However, in the above internal electrolyte eruption (gas diffusion) stage, the battery has not yet caught fire, and the gasified electrolyte vapor substances emitted at this time include DMC (Dimethyl carbonate), DEC (Diethyl carbonate), EC (Ethylene carbonate), EMC (Ethyl-methylcarbonate), etc.

And as time passes and the temperature continues to rise, a chain reaction known as a Heat-Temperature Reaction (HTR) loop occurs, causing the temperature to rise abnormally, reaching the stage of thermal runaway and combustion, which can cause a fire and explosion. At this time, hazardous substances such as CO2, CO, and HF, which are decomposition products of the electrolyte, and flammable substances such as H2 are generated and emitted in large quantities, leading to a major accident.

Fires caused by thermal runaway as described above are fatal because they can cause greater damage to life and property than normal fires, as the conventional fire-fighting method of spraying water cannot be used because lithium ions, which are one of the electrolyte components, react well with water. Therefore, conventional battery thermal runaway prevention is to completely prevent battery overheating, which is the cause of thermal runaway, and to perform battery thermal management by adding a battery management system (BMS) to the battery system assembly (BSA), perform battery thermal management, and detect when the battery is in a dangerous situation and notify electronically.

However, conventional BMSs rely on electrical devices, so there is a risk of malfunction, or they themselves function as an electrical battery stimulus source, and there are problems such as complex system configurations that make maintenance difficult.

In particular, the applicant of the present invention devised the present invention by noting that there is a time difference between the occurrence of thermal runaway after the primary electrolyte gas is emitted due to damage to the battery.

KR registered patent no. 10-1821493 KR Publication Patent No. 10-2022-7032775 KR registered patent no. 10-2390992 KR registered patent no. 10-1249981 KR registered patent no. 10-2411251

The purpose of the present invention is to provide a leak detection structure and a leak detection sensor capable of detecting primary electrolyte gas generated due to damage to a battery, and a leak detection system including the same, in order to solve the problems of the prior art as described above.

In order to achieve the above-mentioned purpose of the present invention,

A leak detection structure is provided, which comprises one or more base material deposits formed on a Si series wafer substrate, and one or more types of sensitive materials are deposited on the one or more base material deposits.

In the above, it is preferable that the at least one base material deposit is at least one component selected from tin oxide (SnO2), tungsten trioxide (WO3), copper oxide (CuO), nickel oxide (NiO), and titanium dioxide (TiO2).

In the above, it is preferable that the responsive material is at least one component selected from at least one metal element or at least one metal oxide for a p-type semiconductor.

In addition, the present invention provides a method for manufacturing the leak detection structure, comprising: a pre-pattern forming step (S11) of forming a pre-pattern of a polystyrene component on a Si series wafer substrate; a base material first deposition step (S12) of first depositing a base material after the step (S11); a base material second deposition step (S13) of first depositing the base material by a sputtering method on a side surface of the pre-pattern to form one or more side base material deposition bodies; a pre-pattern removing step (S14) of removing the pre-pattern after the step (S13); and a sensitive material deposition step (S15) of depositing one or more sensitive materials after the step (S14).

In the above manufacturing method, it is preferable that at least one base material is at least one component selected from tin oxide (SnO2), tungsten trioxide (WO3), copper oxide (CuO), nickel oxide (NiO), and titanium dioxide (TiO2).

In the above manufacturing method, it is preferable that the height (sh) of one or more side base material deposition bodies has a range of sw:sh=1~13~18 relative to the width (sw).

In the above manufacturing method, it is preferable that the responsive material is at least one component selected from at least one metal element or at least one metal oxide for p-type semiconductors.

The present invention also provides a leak detection sensor including one or more leak detection structures.

In addition, the present invention provides a leak detection system including one or more leak detection sensors, comprising: a sensor measurement unit including one or more of the leak detection sensors; a signal processing unit for processing a sensing signal transmitted from the sensor measurement unit; and an output unit, wherein the signal processing unit includes one or more noise filters; and a drift correction unit.

According to the present invention, a highly reliable battery failure and leakage detection sensor can be provided that detects electrolyte gas, which is a detection target substance, to quickly detect damage to a battery before the battery thermal runaway, thereby preventing or minimizing critical casualties and also minimizing property damage.

Figure 1 is a graph explaining the thermal runaway fire of a battery.
Figure 2 is a flow chart of the structure manufacturing process of the present invention.
Figure 3 is a structural diagram of the structure of the present invention.
Figure 4 is a table showing the physical quantities of leaked gas.
Fig. 5 is a photograph of a pre-pattern of a structure of the present invention.
Figure 6 is a structural diagram of the aspect ratio of the structure of the present invention.
Figure 7 is an actual photograph of the sensor of the present invention.
Figures 8a to 8d, Figures 9 and 10 are graphs showing the results of structural experiments of the present invention.
Figure 11 is a system structure diagram of the present invention.

Hereinafter, the present invention will be described in more detail with reference to preferred embodiments and the accompanying drawings. The following description is intended to aid understanding and practice of the present invention, but is not intended to limit the present invention. Those skilled in the art will understand that various modifications, changes, or alterations may be made within the spirit of the present invention as set forth in the claims below.

Throughout the specification of the present invention, when a part is said to be “connected” to another part, this includes not only cases where it is “directly connected,” but also cases where it is “electrically connected” with another element in between.

Throughout the specification of the present invention, when it is said that a member is positioned “on” another member, this includes not only cases where the member is in contact with the other member, but also cases where another member exists between the two members.

Throughout the specification of the present invention, when a part is said to “include” a certain component, this does not mean that other components are excluded, but rather that other components can be included, unless otherwise specifically stated. The terms “about,” “substantially,” and the like used throughout the specification of the present invention are used in a meaning that is at or close to the numerical value when manufacturing and material tolerances inherent in the stated meaning are presented, and are used to prevent unscrupulous infringers from unfairly utilizing the disclosure contents that are stated as exact or absolute values to help the understanding of the present invention.

The terms “step of ~” or “step of ~” as used throughout the specification of the present invention do not mean “step for ~.”

Throughout the specification of the present invention, the term “combination(s) thereof” included in the expressions in the Makushi format means one or more mixtures or combinations selected from the group consisting of the components described in the expressions in the Makushi format, and means including one or more selected from the group consisting of said components.

FIG. 2 is a process flow diagram for manufacturing a leak detection structure (110) and a leak detection sensor used in the leak detection sensor of the present invention, and FIG. 3 is a structural diagram sequentially showing the manufacturing form of the leak detection structure (110) according to the steps of FIG. 2. Hereinafter, a method for manufacturing a leak detection structure and a leak detection sensor used in the leak detection sensor of the present invention will be described with reference to FIGS. 2 and 3.

As described above, before thermal runaway, the battery leaks gasified electrolyte materials such as DMC, DEC, EC, and EMC, and when a fire occurs due to thermal runaway, flammable materials such as CO2, CO, HF, H2, and H2S, or toxic gases due to ignition of high-polymers are generated. In the present invention, by detecting at least one of DMC, DEC, EC, and EMC leaking before thermal runaway as a detection target, an emergency situation and a battery failure before the battery thermal runaway are notified, thereby preventing safety accidents or preventing and minimizing casualties.

Hereinafter, as a most preferred embodiment, a leak detection structure included in the leak detection sensor of the present invention will be described by way of example in which it detects DMC (Dimethyl carbonate), which is the most representative substance among the electrolyte vapor substances.

The reason why the above DMC is set as a preferred embodiment detection target substance is because, as shown in FIG. 4, it is known to have the lowest boiling point among the common electrolyte vapors emitted (approximately 90°C), so it leaks the fastest in case of battery failure and overheating, allowing for rapid detection, and compared to other substances, it has a toxicity standard (LC50) for vapor inhalation of 140 mg/L, making it relatively non-toxic, so even if a rapid leak occurs, no casualties will occur, and there is little concern about harm until the user takes necessary measures after being notified of a leak or leaves the area/device where the battery is installed. Therefore, the above DMC was set as a preferred embodiment detection target substance.

The sensor of the present invention, described through Fig. 2, is a semiconductor DMC detection sensor, and a conventional semiconductor manufacturing process can be used. In addition to the specific method described below, other manufacturing methods that are used in semiconductor manufacturing and can be substituted for the specific method described below can also be used, and

First, a pre-pattern formation step (S11) is performed to form a pre-pattern (111a) of polystyrene (PS) on a SiO ₂ /Si wafer substrate (111) for conventional semiconductor manufacturing.

The method for forming a pre-pattern on a wafer substrate is a conventional lithography method, and any method capable of forming a pattern, such as thermal/UV curing nano imprint lithography (NIL), electron beam lithography, extreme ultraviolet lithography (EUV lithography), and quantum lithography, can be used.

And the above-mentioned pre-pattern forming step (S11) further includes an etching process, and the etching process is performed by a dry etching method to facilitate manufacturing a three-dimensional shape of the leak detection structure of the present invention.

The etching process in the above-mentioned pre-pattern formation step (S11) uses a conventional dry etching method, but since the patterning form and shape differ depending on the type and flow rate of gas used for etching and the conditions, an ideal pattern of the form shown in Fig. 5 was obtained as a result of forming a pattern under various conditions. In order to obtain a pattern like Fig. 5, conventional non-isotropic dry etching was performed.

The reaction was performed for 80 to 95 seconds at 0.03 to 0.07 mbar and 75 to 85 W using an etching device, and 2 to 4 sccm (standard cc per minute) of carbon tetrafluoride (CF ₄ ) and 25 to 28 sccm of oxygen (O ₂ ) were injected under an argon (Ar) atmosphere.

In the above, argon gas is a gas used in normal dry etching to determine the directionality of etching, and oxygen gas is used to control roughness. If oxygen gas is injected at less than 25 sccm, it is ineffective, and if it is injected at more than 28 sccm, the etching level becomes excessive and the polymer pattern is damaged, so it is determined within the above range.

In addition, carbon tetrafluoride was also included in the process of the present invention as it was confirmed that uniform etching and pattern formation can be achieved when added in small amounts. However, if it is added in less than 2 sccm, no effect is observed, and if it is added in excess of 4 sccm, too much etching occurs, damaging the polymer pattern and substrate. Therefore, it is determined within the above range.

After forming a polystyrene pre-pattern (111a) on a substrate (111) through the above step (S11), a base material primary deposition step (S12) is performed to perform primary deposition (112) of a base material.

The base material selected in the above step (S12) preferably uses at least one selected from tin oxide (SnO ₂ ), tungsten trioxide (WO ₃ ), copper oxide (CuO), nickel oxide (NiO), and titanium dioxide (TiO ₂ ).

Most preferably, tungsten trioxide (WO ₃ ) is used to facilitate detection of DMC, which is a preferred embodiment of the target material of the present invention. Hereinafter, the use of tungsten trioxide (WO ₃ ) as the base material will be described as an example.

In the above step (S12), a base material, tungsten trioxide (WO ₃ ), is deposited (112), and the base material is deposited on the patterned substrate at a level of 10 to 20 nm using a conventional method. More specifically, it has been confirmed that when a 20 nm thick base material film is deposited (112) using an electron beam sputtering method, a three-dimensional structure is easily formed in the future, and therefore, the above is performed.

Thereafter, a base material secondary deposition step (S13) for secondary deposition of the base material is performed. In the step (S13), a base material of a certain thickness is deposited (113) on the side surface of the pre-pattern (111a) using a conventional PVD sputtering method. At this time, the base material film (112) deposited on the substrate (111) and the pre-pattern (111a) is scraped off to deposit the side surface base material (113). Preferably, the side surface base material deposition (113) is deposited to a thickness of 15 to 25 nm.

This is a characteristic of the sputtering method, in which an ion plasma beam is irradiated onto the base material film (112) to physically and chemically vaporize the components of the previously applied film (112) and cause the particle masses to protrude and attach to the side surface of the prepattern (111a) to form a side base material film (113). Preferably, the base material film (112) deposited on the substrate (111) and the prepattern (111a) is re-deposited through an argon plasma milling process for 350 to 450 seconds to deposit the base material (113) on the side surface.

Through the above step (S13), a base material is deposited (113) on the side of the pre-pattern, and then a pre-pattern removal step (S14) is performed to remove the pre-pattern (112a) by reacting for 12 minutes in an argon (Ar) atmosphere at 0.1 mbar and 100 W while injecting 75 to 85 scans of oxygen (O2) using a conventional anisotropic etching method.

As the above step (S14) is performed, only a side base material deposition body (113) with a thickness of 15 to 25 nm remains on the substrate (111), and the side base material deposition body (113) becomes the body forming the basis of the structure (110) of the present invention.

Here, it is preferable that the side base material deposition body (113) has a width (sw) and a height (sh) that are in a certain ratio, as shown in Fig. 6. If the height (sh) is too low compared to the width (sw), the cross-sectional area formed by the structure (110) of the present invention becomes small, so that the sensitivity to the target detection material decreases and the performance deteriorates. If the height (sh) is too high compared to the width (sw), the structural stability decreases, so that the deposition body (113) may be damaged or broken, causing problems.

It is preferable that the height (sh) to the width (sw) above be sw:sh in the range of 1:13 to 18, and it has been confirmed that the ratio that guarantees the maximum area while securing the structural stability of the deposition body (113) is 1:15. For example, if the width (sw) of the deposition body (113) is 20 nm, the height (sh) is preferably 260 to 360 nm, and more preferably, the height (sh) is approximately 300 nm.

After forming a plurality of deposition bodies (113) on the substrate (111) through the above step (S14), a deposition step (S15) of depositing a sensitizing material is performed.

The above-mentioned sensitive material is a material that reacts sensitively to a detection target material, thereby allowing the substrate (111) and the deposited material (113) to function as a structure (110) that can be used in the sensor of the present invention. The sensitive material (114) is deposited on the deposited material (113) using a conventional sputtering process.

The above-mentioned responsive material may be one selected from among one or more metal elements and metal oxides, or a combination of one or more selected ones. Preferably, the responsive material is a noble metal element such as platinum (Pt) or palladium (Pd), or a metal oxide such as nickel oxide (NiO) or chromium oxide (Cr ₂ O ₃ ), particularly, one selected from among metal oxides for p-type semiconductors, or a combination of one or more selected ones. In addition, a metal element or a metal oxide may be selected and used. For example, stannous oxide (SnO), copper oxide series (CuO _x ), zinc oxide (ZnO), etc., which are used as metal oxides for p-type semiconductors, may be used.

By depositing the above-mentioned sensitive material (114) on a deposition body (113), a leak detection structure (110) that can be used in the sensor of the present invention can be created.

After the above leak detection structure (110) is made, a sensor manufacturing step (S16) of manufacturing a sensor including the leak detection structure (110) is performed. In the above step (S16), since the sensor can be manufactured through a typical semiconductor packaging process such as wire bonding, a description of the sensor manufacturing is omitted. Preferably, the sensor is implemented as a ROIC (Readout IC; readout integrated circuit) that supports one or more multiple input/outputs, preferably four input/output sections, including the leak detection structure (110).

Figure 7 is an example photograph of a leak detection sensor manufactured through the above step (S16).

A test was conducted to determine whether the leak detection sensor manufactured through the above step (S16) can easily detect the target substance for detection, which is the purpose of the present invention, and the test results are described below.

[Test Example 1: Detection Range and Sensitivity Test]

Figures 8a to 8d are reactivity graphs for a leak detection sensor including a leak detection structure (110) on which the four types of sensitive materials (Pt, Pd, NiO, Cr ₂ O ₃ ) are deposited. The leak detection sensor is a conventional 4-probe resistance type sensor and is made so that a constant bias can be applied, and the dynamic detection response of the leak detection sensor was tested under air. The detection target material was DMC.

DMC gas was injected at concentrations of 0.1, 1, 2, 3, 4, and 5 ppm with time differences, and the response amplitude (R _air /R _g ) for the leak detection structure (110) on the sensor was measured every second and used as the y-axis reactivity (gas response).

First, as shown in FIGS. 8a to 8d, the concentration of DMC gas injected at the frontmost point (before 1000 sec) on the x-axis time is 0.1 ppm, and even for 0.1 ppm of DMC gas, it shows a high reactivity (sensitivity) that is more than 3 times higher than the average noise, and it can be seen that the leak detection structure (110) of the present invention secures a very wide detection range for the target detection substance.

Also, in terms of sensitivity, it showed an average sensitivity of more than 3 times for 0.1 ppm of DMC gas, and as the ppm increased, the sensitivity increased rapidly, showing a sensitivity of up to 4,500% for 5 ppm of DMC gas for the chromium oxide deposition structure, and up to 7,000% for the nickel oxide deposition structure, confirming that the above-mentioned reactive material has very high sensitivity and is suitable for use in the leak detection structure (110) of the present invention.

[Example 2: Reaction speed test]

The response speed of a leak detection sensor including a leak detection structure using platinum as the above-mentioned reactant was tested. The reactivity (sensitivity) was measured by exposing the sensor to 10 ppm of DMC, and the target was to respond within 120 seconds.

And as shown in Fig. 9, it was confirmed that the sensor reacted in 92 seconds, within 120 seconds. As a result of experiments on the remaining reactants (palladium, nickel oxide, and chromium oxide) under the same conditions, all reacted faster than the sensor using platinum as a reactant, confirming that all four reactants have fast reaction speeds and are suitable for use as the sensor of the present invention.

[Example 3: Selectivity Test]

In order to test whether the above-mentioned reactant can accurately select and detect the target detection substance, a selectivity test was performed on a leak detection sensor including a leak detection structure using chromium oxide. In addition to the detection target substance DMC, the leak detection structure using chromium oxide was exposed to DEC, one of the representative electrolyte leakage gases, and hydrogen (H ₂ ) and carbon monoxide (CO), which are representative gases generated by battery combustion, each having a concentration of 5 ppm, to test the reactivity.

As a result, as shown in Fig. 10, it was confirmed that the detection target substance, DMC, can be clearly selected and detected compared to gases emitted from combustion, as it reacted three times more sensitively (3,000%) than hydrogen and carbon monoxide generated from combustion.

In addition, as illustrated in FIG. 10, the leak detection structure sensor using chromium oxide showed a high sensitivity responsivity of 4,500% not only for DMC but also for DEC, a representative electrolyte leak gas. This shows that the leak detection structure sensor using chromium oxide can use not only DMC but also DEC as a detection target material. In order to distinguish between DEC and DMC, it is sufficient to determine the responsivity level, and therefore, the leak detection structure sensor using chromium oxide can distinguish between DEC and DMC by selecting and judging the sensitivity output value detected as DEC or DMC. Accordingly, the leak detection structure sensor using chromium oxide can distinguish between DEC and DMC.

And for the remaining test examples (Test Example 1, Test Example 2) mentioned above, DEC instead of DMC was used as the detection target substance, and the results obtained under the same conditions were almost the same as those in Figs. 8a to 8d and Fig. 9 using DMC, confirming that DEC can also be used as the detection target substance.

And as a result of the experiment through the above test examples (Test Examples 1 to 3), it was confirmed that nickel oxide or chromium oxide, which are metal oxides for p-type semiconductors, are suitable as the reactant, and chromium oxide is the most preferable. This is because, compared to noble metal materials such as Pd and Pt, metal oxides for p-type semiconductors are not only easy to obtain and economical, but also it was confirmed that the sensitivity and selectivity are greatly improved when forming a pn junction with the deposited body (113). Therefore, it was confirmed that the most preferable structure (110) that can be used in the sensor of the present invention is a tungsten oxide-chromium oxide (WO ₃ -Cr ₂ O ₃ ) heterostructure.

FIG. 11 is a structural diagram of a leak detection system (1000) including a sensor of the present invention. Hereinafter, the leak detection system (1000) of the present invention will be described through FIG. 11.

Before the description, the system (1000) of the present invention may be a computing system including one or more arithmetic units, memory units, and input/output units, or one or more microcontrollers, or one or more multi-input ROICs, or a combination of two or more of these. The hardware devices for implementing each functional unit of the system (1000) of the present invention may be selected and implemented by the manufacturer from among conventional electrical and electronic systems, and thus the description thereof will be omitted.

The leak detection system of the present invention includes a sensor measurement unit (100) including one or more sensors (100a, 100b...) capable of detecting one or more detection target substances.

As described above, the sensor measuring unit (100) includes one or more sensors (100a, 100b...), and each of the sensors (100a, 100b) includes one or more structures (110). Each of the structures (110a, 110b...) is a semiconductor structure capable of detecting a target substance, and the detection target of each connected sensor (100a, 100b...) is determined based on the type of substance that each of the structures (110a, 110b...) can detect. Therefore, each of the sensors (100a, 100b...) can detect different substances as target substances.

In addition, it is preferable that each sensor (100a, 100b...) included in the sensor measurement unit (100) has a detachable exchange structure in order to set a different detection target material as needed. Accordingly, each of the sensors (100a, 100b...) can be implemented in the form of a sub-module that can be detached in a conventional manner on the system (1000) of the present invention.

And the system (1000) of the present invention includes a signal processing unit (200).

The signal processing unit (200) is a unit that processes the sensing signal transmitted from the sensor measurement unit (100) to determine whether a detection target substance exists in the external air, and includes one or more built-in programs that can determine whether one or more types of detection target substances that have been previously input exist in the sensing signal transmitted from the sensor measurement unit (100).

And the signal processing unit (200) includes one or more noise filters (210).

The above noise filter (210) has the function of removing unavoidable noise included in the sensing signal transmitted from the sensor measurement unit (100).

Therefore, the noise filter (210) includes at least one selected from among a conventional analog circuit filter and a digital circuit filter for removing noise from the measurement signal of the sensor measurement unit (100).

And the signal processing unit (200) includes a drift correction unit (220) for correcting drift (change in sensitivity or output of the sensor) that occurs when the sensor measurement unit (100) is not used for a long period of time.

The above drift correction unit (220) includes one or more drift prevention algorithms for correcting the drift of the sensor measurement unit (100). It is preferable that the drift prevention algorithm be an algorithm that monitors the lowest measurement value of the sensing signal transmitted from the sensor measurement unit (100) as a typical ADC (Automatic Baseline Calibration) algorithm, matches it with a previously calculated and stored value, and then corrects for the difference.

And the system (1000) of the present invention includes an output unit (300). The output unit (300) is a typical output means including a display or speaker that can visually or audibly notify an external user when the signal processing unit (200) determines that the target substance is leaking as a result of reading the sensing information transmitted by the sensor measuring unit (100).

100: Sensor. 110: Structure.
111: Substrate. 111a: Free pattern.
112, 113: Base material. 114: Sensing material.
200: Signal processing unit. 210: Noise filter.
220: Drift compensation unit. 300: Output unit.

Claims (9)

As a leak detection structure,
Comprising one or more base material deposits formed on a Si series wafer substrate,
A leak detection structure characterized in that one or more types of sensitive materials are deposited on one or more of the above base material deposits. A leak detection structure according to claim 1, characterized in that the at least one base material deposition body is composed of at least one component selected from tin oxide (SnO2), tungsten trioxide (WO3), copper oxide (CuO), nickel oxide (NiO), and titanium dioxide (TiO2). A leak detection structure, characterized in that in claim 1, the sensitive material is at least one component selected from at least one metal element or at least one metal oxide for p-type semiconductors. A method for manufacturing a leak detection structure according to claim 1,
A pre-pattern formation step (S11) for forming a pre-pattern of a polystyrene component on a Si series wafer substrate;
After the above step (S11), a base material first deposition step (S12) for first depositing the base material;
After the above step (S12), a second base material deposition step (S13) of depositing the base material first deposited by sputtering onto the side surface of the pre-pattern to form one or more side base material deposition bodies;
After the above step (S13), a pre-pattern removal step (S14) for removing the pre-pattern;
And a method for manufacturing a leak detection structure, including a sensitive material deposition step (S15) of depositing one or more sensitive materials after the above step (S14). A method for manufacturing a leak detection structure, characterized in that in claim 4, the one or more base materials are at least one component selected from tin oxide (SnO2), tungsten trioxide (WO3), copper oxide (CuO), nickel oxide (NiO), and titanium dioxide (TiO2). A method for manufacturing a leak detection structure, characterized in that in claim 4, the one or more side base material deposition bodies have a height (sh) relative to a width (sw) in the range of sw:sh=1 to 13 to 18. A method for manufacturing a leak detection structure, characterized in that in claim 4, the sensitive material is at least one component selected from at least one metal element or at least one metal oxide for p-type semiconductors. A leak detection sensor comprising at least one leak detection structure of claim 1. A leak detection system comprising at least one leak detection sensor of clause 8,
A sensor measuring unit including one or more of the above leak detection sensors;
A signal processing unit that processes the sensing signal transmitted from the above sensor measurement unit;
And includes an output section,
A leak detection system, characterized in that the signal processing unit includes one or more noise filters; and a drift correction unit.