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KR910004067A - Thin film EL display device and manufacturing method thereof - Google Patents

Thin film EL display device and manufacturing method thereof Download PDF

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Publication number
KR910004067A
KR910004067A KR1019890010940A KR890010940A KR910004067A KR 910004067 A KR910004067 A KR 910004067A KR 1019890010940 A KR1019890010940 A KR 1019890010940A KR 890010940 A KR890010940 A KR 890010940A KR 910004067 A KR910004067 A KR 910004067A
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KR
South Korea
Prior art keywords
zns
film
fluorescent layer
thin film
insulating layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019890010940A
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Korean (ko)
Inventor
류재화
Original Assignee
이헌조
주식회사 금성사
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019890010940A priority Critical patent/KR910004067A/en
Publication of KR910004067A publication Critical patent/KR910004067A/en
Withdrawn legal-status Critical Current

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Abstract

내용 없음.No content.

Description

박막 EL표시소자 및 그 제조방법Thin film EL display device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 형광층의 단면도,2 is a cross-sectional view of the fluorescent layer of the present invention,

제3도는 본 발명의 형광층이 적층된 상태의 EL표시소자 단면도.3 is a cross-sectional view of an EL display element in a state where the fluorescent layer of the present invention is laminated.

Claims (3)

투명유리기판상에 투명전극을 성막한 후 X축으로 선에칭한 다음 제1절연층, 형광층, 제2절연층, 배면전극을 순차적으로 적층하며, 상기 투명유리기판과 유리카바를 프릿유리로 접착시켜 배면전극과 유리카바 사이에 규소-기름을 주입하여 박막 EL소자를 제조하는 방법에 있어서, 상기 형광층은 전자빔 증착법으로 ZnS에 1mol%의 망간이 도핑된 ZnS:Mn 펠렛과 순수한 ZnS를 증착원으로 하여 제1ZnS:Mn막은 ZnS:Mn 펠렛을 사용하여 5A/S의 증착율로 500∼1000A의 두께가 되게 성막한 후 순수한 ZnS펠렛을 증착원으로 4000∼5000A의 구께가 되게 Zn막을 성막하고, 그 뒤 ZnS:Mn펠렛을 증착원으로 하여 500∼1000A의 두께로 제2ZnS:Mn막을 성막한 다음 5×10-5Torr의 진공에서 450-500℃로 1시간 열처리하여 형광층의 결정성을 높히고, Mn2+이온을 균일한 면으로 형광층의 양단에 형성되게 제조함을 특징으로 하는 박막 EL표시소자의 제조방법.After forming a transparent electrode on the transparent glass substrate, line etching is performed on the X-axis, and then the first insulating layer, the fluorescent layer, the second insulating layer, and the back electrode are sequentially stacked, and the transparent glass substrate and the glass cover are adhered with frit glass. In the method for manufacturing a thin film EL device by injecting silicon-oil between the back electrode and the glass cover, the fluorescent layer is a ZnS: Mn pellet doped with ZnS 1 mol% manganese in ZnS and pure ZnS by electron beam deposition The first ZnS: Mn film was formed to a thickness of 500 to 1000 A using a ZnS: Mn pellet at a deposition rate of 5 A / S. The second ZnS: Mn film was formed to a thickness of 500 to 1000 A using ZnS: Mn pellet as a deposition source, and then heat-treated at 450-500 ° C. for 1 hour at a vacuum of 5 × 10 −5 Torr to increase the crystallinity of the fluorescent layer. Mn 2+ ions are formed on both sides of the fluorescent layer in a uniform plane A method of manufacturing a thin film EL display device, characterized in that it is manufactured. 제1항에 있어서, 상기 형광층은 열증착법으로 ZnS분말과 Mn을 각각 독립적인 저항보트에 넣은 후 제1ZnS:Mn막은 ZnS와 Mn을 동시에 저항가열하여 성막한 후 ZnS분말만을 가열하여 순수한 ZnS막을 성막하여, 그 뒤 ZnS와 Mn을 동시에 저항가열하여 제2ZnS:Mn막을 제조함을 특징으로 하는 박막 EL표시소자의 제조방법.The method of claim 1, wherein the fluorescent layer is a ZnS powder and Mn in a separate resistance boat by the thermal evaporation method, the first ZnS: Mn film is formed by resistance heating of ZnS and Mn at the same time, and then heating only ZnS powder to form a pure ZnS film And forming a second ZnS: Mn film by simultaneously resistance-heating ZnS and Mn at the same time. 투명유리기판(10)상에 투명전극(11), 제1절연층(12), 형광층(13), 제2절연층(14), 배면전극(15), 유리카바(17)를 순차적으로 적층한 박막 EL표시소자에 있어서, 상기 형광층(13)은 제1ZnS(13a)과 ZnS막(13b), 제2ZnS:Mn막(13c)으로 분리되게 구성함을 특징으로 하는 박막 EL표시소자.The transparent electrode 11, the first insulating layer 12, the fluorescent layer 13, the second insulating layer 14, the back electrode 15, and the glass cover 17 are sequentially disposed on the transparent glass substrate 10. The stacked thin film EL display device, wherein the fluorescent layer (13) is configured to be separated into a first ZnS (13a), a ZnS film (13b), and a second ZnS: Mn film (13c). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890010940A 1989-07-31 1989-07-31 Thin film EL display device and manufacturing method thereof Withdrawn KR910004067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890010940A KR910004067A (en) 1989-07-31 1989-07-31 Thin film EL display device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890010940A KR910004067A (en) 1989-07-31 1989-07-31 Thin film EL display device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
KR910004067A true KR910004067A (en) 1991-02-28

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KR1019890010940A Withdrawn KR910004067A (en) 1989-07-31 1989-07-31 Thin film EL display device and manufacturing method thereof

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KR (1) KR910004067A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020064215A (en) * 2001-02-01 2002-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Deposition apparatus and deposition method
KR20020066205A (en) * 2001-02-08 2002-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Film formation apparatus and film formation method
KR100864937B1 (en) * 2001-02-21 2008-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for film deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020064215A (en) * 2001-02-01 2002-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Deposition apparatus and deposition method
KR20020066205A (en) * 2001-02-08 2002-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Film formation apparatus and film formation method
KR100864937B1 (en) * 2001-02-21 2008-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for film deposition

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19890731

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