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KR910005395B1 - Smear property measuring device of CCD solid-state imaging device - Google Patents

Smear property measuring device of CCD solid-state imaging device Download PDF

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KR910005395B1
KR910005395B1 KR1019880010426A KR880010427A KR910005395B1 KR 910005395 B1 KR910005395 B1 KR 910005395B1 KR 1019880010426 A KR1019880010426 A KR 1019880010426A KR 880010427 A KR880010427 A KR 880010427A KR 910005395 B1 KR910005395 B1 KR 910005395B1
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state imaging
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KR900004035A (en
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김대규
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삼성전관 주식회사
김정배
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks

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Abstract

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Description

CCD형 고체촬영소자의 스미어 특성 측정장치Smear property measuring device of CCD solid-state imaging device

제1도는 CCD형 고체촬영장치의 단면도.1 is a cross-sectional view of a CCD solid-state imaging device.

제2도는 고체촬영소자의 화소부분을 나타낸 도면.2 is a view showing a pixel portion of a solid state image pickup device.

제3도는 스미어 특성 측정용 테스트 패턴도.3 is a test pattern diagram for measuring smear characteristics.

제4도는 본 발명의 스미어 특성 측정장치의 구성도.4 is a block diagram of a smear characteristic measuring apparatus of the present invention.

제5도는 본 발명의 흐름도.5 is a flow chart of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

31 : 구동신호발생기 32 : CCD형 고체촬영소자31: drive signal generator 32: CCD solid-state imaging device

33 : 수직동기신호 검출기 34-37 : 카운터33: vertical synchronous signal detector 34-37: counter

38 : A/D 변환기 39 : 마이크로 컴퓨터38: A / D converter 39: microcomputer

40 : 7-세그먼트 발광다이오드 구동부40: 7-segment LED driver

41 : 7-세그먼트 발광다이오드41: 7-segment light emitting diode

본 발명은 CCD(Charge Coupled Device)형 고체촬영소자의 스미어 특성 측정장치에 관한 것으로, 특히 고체촬영소자에서 발생된 신호를 비데오 신호로 변조하여 스미어 특성을 측정하지 않고 고체촬영소자의 스미어 특성만을 직접 측정할 수 있는 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for measuring smear characteristics of a CCD (Charge Coupled Device) type solid-state imaging device. In particular, the signal generated from the solid-state imaging device is modulated into a video signal to directly measure only smear characteristics of the solid-state imaging device. It relates to a device that can be measured.

제1도는 CCD형 고체촬영소자의 단면도를 나타낸 것이다.1 is a cross-sectional view of a CCD solid-state imaging device.

고체촬영소자는 포토다이오드(1)에 입사되는 빛에 의해 발생된 신호가 전송전하 결합소자(2)를 통해 검출 영역으로 전송되어 영상을 구성하는 소자이다.The solid state image pickup device is a device constituting an image by transmitting a signal generated by light incident on the photodiode 1 to the detection region through the transfer charge coupling device 2.

이때 신호는 입사된 빛에 의해 기판(3)에서 생성되어 포토다이오드(1)의 공핍층(4)으로 이동되는 신호전하(6)와, 기판(3)에서 생성되어 전송영역인 수직전하 결합소자(Vertical charge Coupled Device, V-CCD, 2)의 공핍층(5)으로 인가되는 스미어 전하(Smear charge, 7)가 있다.At this time, the signal is generated in the substrate 3 by the incident light and is transferred to the depletion layer 4 of the photodiode 1, and the vertical charge coupling element generated in the substrate 3 and is a transmission region. There is a smear charge 7 applied to the depletion layer 5 of the (Vertical charge Coupled Device, V-CCD, 2).

스미어 전하(7)가 공핍층(5)에 인가되면, 신호전하(6)와 함께 스미어 전하(7)가 함께 출력되어 스미어 현상이 발생하여 화면의 영상의 질을 저하시키게 된다.When the smear charge 7 is applied to the depletion layer 5, the smear charge 7 is output together with the signal charge 6 to generate a smear phenomenon, thereby degrading an image of the screen.

따라서, CCD형 고체촬영소자의 화소부분을 나타낸 제2도에서 보는 바와 같이, 스미어 특성은 빛이 고체촬영소자에 입사될 때 빛을 받은 화소에서 발생된 신호(c부분)가 빛을 받지 않은 부분(d부분)으로 누설되어 수직으로 무늬를 형성하는 것이다.Therefore, as shown in FIG. 2 showing the pixel portion of the CCD-type solid-state imaging device, the smear characteristic is a portion in which a signal (part c) generated from a pixel that receives light when light is incident on the solid-state imaging device is not subjected to light. It is leaked to (d part) and forms a pattern vertically.

종래에는 고체촬영소자에 빛을 비추어 발생된 신호를 신호처리회로를 통해 비데오신호로 변조한 다음 파형 모니터와 영상모니터를 이용하여 스미어 특성을 측정하였었다.Conventionally, the signal generated by illuminating the solid state image pickup device is modulated into a video signal through a signal processing circuit, and then smear characteristics are measured using a waveform monitor and an image monitor.

본 발명의 목적은 입사된 빛에 의해 발생된 신호를 비데오 신호로 변조하여 스미어 특성을 측정하므로써 발생하는 신호처리회로의 영향을 배제하고, 고체촬영소자의 스미어 특성을 직접 측정할 수 있는 CCD형 고체촬영소자의 스미어 특성 장치를 제공함에 있다.An object of the present invention is to remove the influence of the signal processing circuit generated by measuring the smear characteristics by modulating the signal generated by the incident light into a video signal, CCD type solids that can directly measure the smear characteristics of the solid state imaging device An object of the present invention is to provide a smear characteristic device for an image pickup device.

이하 첨부된 도면에 의거하여 본 발명의 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

제2도는 수평으로 H개, 수직으로 V개의 화소를 가진 고체촬영소자의 화소부분을 도시한 것으로, CCD형 고체촬영소자의 스미어 특성은 빛을 받은부분(c)의 신호와 빛을 받지 않은부분(d)으로부터 누설되어 나타나는 스미어 신호의 비로서 나타낸다. 중성부의 사각형을 제외하고 얇은 유리기판에 크롬(Cr)이 코팅되어 빛을 차단할 수 있도록 제작된 제3도의 스미어 측정용 테스트 패턴을 이용하여 제2도의 화소에 빛을 비추면, 빛을 받아 밝게 빛나는 부분(c)과, 빛이 가려져 빛을 받지 못하는 부분(e)과, 빛을 받지 못하지만 빛을 받은 부분으로부터 누설되어 신호가 발생하는 부분(d)으로 나뉘어진다.FIG. 2 shows the pixel portion of a solid-state image pickup device having H pixels horizontally and V pixels vertically. The smear characteristics of the CCD-type solid-state imaging device have a signal and an unlighted portion in the lighted portion (c). It is shown as the ratio of the smear signal which leaks from (d). With the exception of the square of the neutral part, the thin glass substrate is coated with chromium (Cr) to block light. It is divided into part (c), part (e) where the light is obscured and not receiving light, and part (d), which leaks from the part which does not receive light but generates a signal.

따라서, 빛을 받아 밝게 빛나는 부분(c)의 한가운데 점(a)과 스미어에 의해 누설된 신호가 희미하게 나타나는 부분(d)의 한 점(b)의 출력신호를 측정하여 두 신호의 비(%)를 구하므로써 스미어 특성을 구할 수 있다.Therefore, by measuring the output signal of the point (a) in the middle (a) of the part (c) shining brightly received by light and the point (b) of the part (d) in which the signal leaked by the smear is faintly measured, the ratio (%) of the two signals is measured. The smear characteristics can be obtained by

이때 A라인은

Figure kpo00001
가 되는 수평화소선이고 B라인은 화소선의 마지막 선에서 수직으로 20하인(line) 위의 수평화소선을 각각 나타낸다.At this time, line A
Figure kpo00001
Is a horizontal pixel line, and a line B represents a horizontal pixel line above 20 lines perpendicular to the last line of the pixel line.

제4도는 상기와 같은 스미어 특성을 측정하기 위한 본 발명의 장치의 구성도이다.4 is a block diagram of an apparatus of the present invention for measuring the smear characteristics as described above.

CCD형 고체촬영소자(32)와

Figure kpo00002
수직카운터(34), (V-20)수직카운터(35) 및
Figure kpo00003
수평카운터(36,37)에 각 화소에서 발생하는 신호를 수평으로 전송하기 위한 수평전송클럭(HP)과 수직으로 전송하기 위한 수직전송클럭(VP)을 발생하며 수직동기신호 검출기(32)에 수직동기신호(VS)를 발생하는 구동신호발생기(31)와, 구동신호발생기(31)에서 인가된 수직동기신호(VS)를 검출하여
Figure kpo00004
수직카운터(24) 및 (V-20)수직카운터(35)에 스타트 펄스(Start pulse, SP)를 인가하는 수직동기신호 검출기(33)와, 수직동기신호 검출기(33)의 스타트 펄스(SP)에 의해 구동신호발생기(31)의 한 출력인 수직전송클럭(VP)을 카운트하여 고체촬영소자의 수직화소수(V)의
Figure kpo00005
이 되는 즉
Figure kpo00006
개재의 클럭이 인가되면
Figure kpo00007
수평카운터(36)에 스타트 펄스(SP)를 인가하는
Figure kpo00008
수직카운터(24) 및 (V-20)번째의 클럭이 인가되면
Figure kpo00009
수평카운터(37)의 스타트 펄스신호(SP)를 출력하는 (V-20)카운터(35)와,
Figure kpo00010
수직카운터(34)와 (V-20)수직카운터(35)의 출력신호인 스타트 펄스(SP)에 의해 구동신호발생기(31)의 다른 출력인 수평전송클럭(HP)을 카운트하여 고체촬영소자의 수평화수소(H)의
Figure kpo00011
이 되는 즉
Figure kpo00012
번째의 클럭이 인가되면 8비트 A/D 변환기(38)의 인에이블신호(EN)를 출력하는
Figure kpo00013
수평카운터(36,37)와,
Figure kpo00014
수평카운터(36,37)의 인에이블신호(EN)에 의해 인에이블되어 CCD형 고체촬영소자(32)의 출력신호인
Figure kpo00015
,
Figure kpo00016
번째 화소에서 발생된 아날로그 신호와 (V-20),
Figure kpo00017
번째 화소에서 발생된 아날로그 신호를 디지털 데이터로 변환하는 A/D 변환기(38)와, A/D 변환기(38)의 출력신호를 저장하고 계산하여 스미어 특성을 계산하는 마이크로 컴퓨터(39)와, 마이크로 컴퓨터(39)의 출력에 의해 7-세그먼트 발광다이오드(41)를 구동시키는 7-세그먼트 발광다이오드 구동부(40)와, 7-세그먼트 발광다이오드 구동부(40)에 의해 마이크로 컴퓨터(39)의 출력인 스미어 특성을 표시하는 7-세그먼트 발광다이오드(41)로 구성되어 있다.CCD solid-state imaging device (32) and
Figure kpo00002
Vertical counter (34), (V-20) Vertical counter (35) and
Figure kpo00003
A horizontal transmission clock HP for horizontally transmitting a signal generated from each pixel to the horizontal counters 36 and 37 and a vertical transmission clock VP for vertically transmitting the vertical transmission clock are generated. The driving signal generator 31 generating the synchronization signal VS and the vertical synchronization signal VS applied from the driving signal generator 31 are detected.
Figure kpo00004
Start pulse SP of the vertical synchronous signal detector 33 and the vertical synchronous signal detector 33 for applying a start pulse SP to the vertical counter 24 and the vertical counter 35 of the V-20. The vertical transfer clock VP, which is one output of the drive signal generator 31, is counted to determine the vertical pixel number V of the solid state imaging device.
Figure kpo00005
That is
Figure kpo00006
When an intervening clock is applied
Figure kpo00007
Applying Start Pulse SP to the Horizontal Counter 36
Figure kpo00008
When the vertical counter 24 and the (V-20) th clock are applied
Figure kpo00009
(V-20) counter 35 for outputting the start pulse signal SP of the horizontal counter 37,
Figure kpo00010
The horizontal transfer clock HP, which is another output of the drive signal generator 31, is counted by the start pulse SP, which is the output signal of the vertical counter 34 and the vertical counter 35, V-20. Of hydrogen level (H)
Figure kpo00011
That is
Figure kpo00012
When the first clock is applied, the enable signal EN of the 8-bit A / D converter 38 is output.
Figure kpo00013
With horizontal counters 36 and 37,
Figure kpo00014
Enabled by the enable signals EN of the horizontal counters 36 and 37, which are output signals of the CCD solid-state imaging device 32.
Figure kpo00015
,
Figure kpo00016
The analog signal generated at the first pixel (V-20),
Figure kpo00017
An A / D converter 38 for converting an analog signal generated at the first pixel into digital data, a microcomputer 39 for storing and calculating an output signal of the A / D converter 38 to calculate smear characteristics, and A 7-segment LED driver 40 for driving the 7-segment light emitting diode 41 by the output of the computer 39 and a smear which is an output of the microcomputer 39 by the 7-segment LED driver 40. It consists of a seven-segment light-emitting diode 41 displaying its characteristics.

상기 구성된 본 발명의 동작을 제5도에 도시된 흐름도에 의거하여 설명하면 다음과 같다.Referring to the operation of the present invention configured as described above based on the flowchart shown in FIG.

CCD형 고체촬영소자(32)에는 구동신호발생기(31)로부터 각 화소에서 발생하는 신호를 수평으로 전송하기 위한 수평전송클럭(HP)과 수직으로 전송하기 위한 수직전송클럭(VP)이 인가된다. 또한 발생된 신호를 변조하여 비데오 신호로 만들기 위해 수직 및 수평동기신호가 인가된다.The CCD type solid-state imaging device 32 is supplied with a horizontal transfer clock HP for horizontally transferring a signal generated in each pixel from the drive signal generator 31 and a vertical transfer clock VP for vertically transferring the signal. In addition, vertical and horizontal synchronous signals are applied to modulate the generated signal into a video signal.

이때, 수평전송클럭(HP)과 수직전송클럭(VP)은 화소의 수에 의해 주파수가 결정되며, 이 수평 및 수직 전송클럭(HP,VP)을 좌측 상단 셀에서부터 카운터하면 화소의 어느 부분의 출력인가를 알 수 있다.At this time, the horizontal transmission clock HP and the vertical transmission clock VP are determined by the number of pixels, and when the horizontal and vertical transmission clocks HP and VP are counted from the upper left cell, the output of any part of the pixel is output. It can be appreciated.

또한, 구동신호발생기(31)로부터 인가되는 수직동기신호(VS)를 수직동기신호 검출기(33)가 검출하여 수직카운터(34)와 (V-20)수직카운터(35)에 스타트 펄스(SP)를 출력하게 된다.In addition, the vertical synchronizing signal detector 33 detects the vertical synchronizing signal VS applied from the driving signal generator 31 and starts the start pulse SP at the vertical counter 34 and the vertical counter 35 of the V-20. Will print

Figure kpo00018
수직카운터(34)는 수직동기신호 검출기(33)로부터 인가되는 스타트 펄스(SP)에 의해 수직전송클럭(VP)을 카운트하여
Figure kpo00019
번째의 클럭을 카운트하면
Figure kpo00020
수평카운트(36)에 스타트 펄스(SP)를 출력한다.
Figure kpo00018
The vertical counter 34 counts the vertical transfer clock VP by the start pulse SP applied from the vertical synchronous signal detector 33.
Figure kpo00019
Counting the first clock
Figure kpo00020
The start pulse SP is output to the horizontal count 36.

Figure kpo00021
수평카운터(36)는 스타트 펄스(SP)에 의해 구동펄스발생기(31)에서 인가되는 수평전송클럭(HP)을 카운트하여
Figure kpo00022
번째의 클럭을 카운트하면 8비트 A/D 변환기(38)의 인에이블단자(EN)에 펄스를 출력하므로써 A/D 변환기(38)가 동작하게 된다. A/D 변환기(38)는 입력단에 연결된 CCD 고체촬영소자(32)의 출력신호, 즉
Figure kpo00023
,
Figure kpo00024
번째 화소에서 발생된 신호(제2도의 점(a)의 신호)를 아날로그-디지탈 변환하게 된다.
Figure kpo00021
The horizontal counter 36 counts the horizontal transmission clock HP applied by the driving pulse generator 31 by the start pulse SP.
Figure kpo00022
When the second clock is counted, the A / D converter 38 operates by outputting a pulse to the enable terminal EN of the 8-bit A / D converter 38. The A / D converter 38 is an output signal of the CCD solid-state imaging element 32 connected to the input terminal, that is,
Figure kpo00023
,
Figure kpo00024
The signal generated at the first pixel (signal of point a in FIG. 2) is analog-digital converted.

A/D 변환기(38)에서 변환된 디지털 데이터는 원칩(one chip) 마이크로 컴퓨터(39)의 내부 프로그램에 의해 램에 저장된다.The digital data converted by the A / D converter 38 is stored in the RAM by an internal program of the one chip microcomputer 39.

다음으로,

Figure kpo00025
수직카운터(34)에 (
Figure kpo00026
+1)번째 클럭이 인가되면
Figure kpo00027
카운터(34)와
Figure kpo00028
수평카운터(36)는 다시 카운트를 시작하게 되고 8비트 A/D 변환기(38)는 동작이 중지된다.to the next,
Figure kpo00025
On the vertical counter (34)
Figure kpo00026
When +1) th clock is applied
Figure kpo00027
With counter 34
Figure kpo00028
The horizontal counter 36 starts counting again and the 8-bit A / D converter 38 is stopped.

다시 (V-20)번째 클럭이 인가되며 (V-20)수직카운터(35)가 스타트 펄스(SP)를 출력하여

Figure kpo00029
수평카운터(37)는 구동신호발생기(31)에서 인가되는 수평전송클럭(HP)을 카운트하게 된다.The (V-20) th clock is applied again, and the (V-20) vertical counter 35 outputs a start pulse (SP).
Figure kpo00029
The horizontal counter 37 counts the horizontal transmission clock HP applied from the driving signal generator 31.

수평카운터(35)가 수평전송클럭(HP)을 카운트하여

Figure kpo00030
번째 클럭이 인가되면 상기와 같이 8비트 A/D 변환기(38)의 인에이블단자(EN)에 펄스를 출력하게 된다. 따라서, A/D 변환기(38)는 인에이블되어 CCD형 고체촬영소자(32)에서 출력되는 (V-20),
Figure kpo00031
번째의 화소에서 발생된 신호(제2도의 점(b)의 신호)를 아날로그-디지탈 변환한다.The horizontal counter 35 counts the horizontal transmission clock HP
Figure kpo00030
When the second clock is applied, the pulse is output to the enable terminal EN of the 8-bit A / D converter 38 as described above. Therefore, the A / D converter 38 is enabled (V-20) output from the CCD solid-state image pickup device 32,
Figure kpo00031
The signal generated at the first pixel (signal of point b in FIG. 2) is analog-digital converted.

변환된 디지털 데이터는 마이크로 컴퓨터(39)의 램에 저장되고 마이크로 컴퓨터(39)는 내부 프로그램에 의해 먼저 저장된 점(a)의 값과 비(%)를 계산하게 된다. 계산된 값은 7-세그먼트 발광다이오드 구동부(40)를 통해 7-세그먼트 발광다이오드(41)에 인가되어 발광다이오드(41)는 스미어 특성값을 표시하게 된다.The converted digital data is stored in the RAM of the microcomputer 39, and the microcomputer 39 calculates a value and a ratio (%) of the point (a) stored first by an internal program. The calculated value is applied to the 7-segment light emitting diode 41 through the 7-segment LED driving unit 40 so that the light emitting diode 41 displays the smear characteristic value.

상기와 같은 전체동작은 수직동기신호(VS)가 1회 발생할 때 수행되는데, 비데오 카메라 특성(NTS 방식 텔레비젼 시스템 특성)상 1초에 60회 발생하여 반복되므로 상기한 스미어 특성 과정도 1초 60회를 반복하게 된다.The entire operation is performed when the vertical synchronizing signal VS occurs once, and the smear characteristic process is also repeated 60 times per second because the video camera characteristic (NTS type television system characteristic) is generated and repeated 60 times per second. Will be repeated.

본 발명은 CCD 고체촬영소자의 스미어 특성을 비데오 신호로 변조하지 않고 측정할 수 있으므로 신호처리(변조)회로의 영향을 배제하여 순수한 고체영상소자의 스미어 특성만을 측정할 수 있는 이점이 있다.According to the present invention, since the smear characteristics of the CCD solid-state imaging device can be measured without modulating the video signal, the smear characteristics of the pure solid-state image device can be measured by excluding the influence of the signal processing (modulation) circuit.

Claims (1)

각 화소에서 발생하는 신호를 수평으로 전송하기 위한 수평전송클럭(HP) 및 수직으로 전송하기 위한 수직전송클럭(VP)과 발생된 신호를 변조하여 비데오 신호로 만들기 위한 수직 및 수평동기신호를 출력하는 구동신호발생기(31)와, 구동신호발생기(31)에서 출력된 수직동기신호(VS)를 검출하여
Figure kpo00032
수직카운터(34)와 (V-20)수직카운터(35)에 스타트펄스(SP)를 출력하는 수직동기신호 검출기(33)와, 수직동기신호 검출기(33)의 스타트 펄스(SP)에 의해 구동신호발생기(31)에서 출력된 수직전송클럭(VP)을 카운트하여
Figure kpo00033
번째 클럭 및 (V-20)번째 클럭을 카운트하면 각각 스타트 펄스(SP)를 출력하는
Figure kpo00034
수직카운터(34) 및 (V-20)수직카운터(35)와,
Figure kpo00035
수직카운터(34) 및 (V-20) 수직카운터(35)의 스타트 펄스(SP)에 의해 구동신호발생기(31)에서 출력된 수평전송클럭(HP)을 카운트하여
Figure kpo00036
번째 클럭이 인가되면 8비트 A/D 변환기(38)을 각각 인에이블시키는
Figure kpo00037
수평카운터(36,37)와, CCD형 고체촬영소자의 출력신호를 아날로그-디지탈 변환하는 8비트 A/D 변환기(38)와, A/D 변환기(38)에서 출력된 디지털 신호를 저장한 다음 스미어 특성을 계산하는 원칩 마이크로 컴퓨터(39)와, 마이크로 컴퓨터(39)의 출력을 7-세그먼트 발광다이오드 구동부(40)를 통해 인가받아 스미어 특성을 나타내는 7-세그먼트 발광다이오드(41)로 구성되어 이루어지는 것을 특징으로 하는 CCD형 고체촬영소자의 스미어 특성장치.A horizontal transmission clock (HP) for horizontally transmitting a signal generated from each pixel, a vertical transmission clock (VP) for vertical transmission and a vertical and horizontal synchronous signal for modulating the generated signal to make a video signal. The drive signal generator 31 and the vertical synchronous signal VS output from the drive signal generator 31 are detected.
Figure kpo00032
It is driven by the start signal SP of the vertical synchronous signal detector 33 and the vertical synchronous signal detector 33 which outputs the start pulse SP to the vertical counter 34 and the vertical counter 35 of the V-20. Counting the vertical transmission clock (VP) output from the signal generator 31
Figure kpo00033
Counting the first clock and the (V-20) th clock outputs a start pulse (SP), respectively.
Figure kpo00034
Vertical counter (34) and (V-20) vertical counter (35),
Figure kpo00035
The horizontal transfer clock HP output from the drive signal generator 31 is counted by the start pulse SP of the vertical counter 34 and the V-20 vertical counter 35.
Figure kpo00036
8-bit A / D converters 38 are respectively enabled when the first clock is applied.
Figure kpo00037
Horizontal counters 36 and 37, an 8-bit A / D converter 38 for analog-to-digital converting the output signal of the CCD-type solid-state imaging device, and a digital signal output from the A / D converter 38. It consists of a one-chip microcomputer 39 for calculating smear characteristics, and a 7-segment light emitting diode 41 that exhibits smear characteristics by receiving the output of the microcomputer 39 through a 7-segment LED driver 40. Smear characterization device of a CCD solid-state imaging device, characterized in that.
KR1019880010426A 1988-08-17 1988-08-17 Smear property measuring device of CCD solid-state imaging device Expired KR910005395B1 (en)

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