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KR950006973B1 - Metal wiring method of semiconductor device - Google Patents

Metal wiring method of semiconductor device Download PDF

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Publication number
KR950006973B1
KR950006973B1 KR1019920009868A KR920009868A KR950006973B1 KR 950006973 B1 KR950006973 B1 KR 950006973B1 KR 1019920009868 A KR1019920009868 A KR 1019920009868A KR 920009868 A KR920009868 A KR 920009868A KR 950006973 B1 KR950006973 B1 KR 950006973B1
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South Korea
Prior art keywords
metal wiring
metal
semiconductor device
plasma
etching process
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KR940001269A (en
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문창순
박대일
김원길
박상훈
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현대전자산업주식회사
김주용
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

By adding the process that removes polymer attached to the side walls of metal lines during metalization, the easy removal of wafer cleaning solution and photoresist covered on the surface of the wafer and the easy formation of aluminum oxide to the side walls of metal lines are obtained. The etching process for removing the polymer is carried in the oxygen plasma state of 10 to 100 SCCM generated at the pressure of 200 to 1500 mTorr and the rf power of 100 to 1000 Watt. The etching process is done for 30 to 200 seconds.

Description

반도체 디바이스의 금속배선형성방법Metal wiring formation method of semiconductor device

본 발명은 반도체 디바이스 제조공정에 관한 것으로, 특히 반도체 디바이스 제조시 금속배선 식각후에 O2플라즈마를 사용하여 금속배선의 측면폴리머(side-polymer)를 제거하는 금속 식각공정의 후처리방법을 포함하는 반도체 디바이스의 금속배선 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing process, and more particularly to a semiconductor including a post-treatment method of a metal etching process in which a side polymer of a metal wiring is removed using an O 2 plasma after metal wiring etching. It relates to a method for forming metal wiring of a device.

반도체 디바이스를 제조하는 공정에 있어서, 종래의 금속식각 이후의 처리방법은 챔버내에서 CF4또는 CHF3플라즈마를 이용하여 금속(Al)에 흡착되어 있는 C1기를 F기로 치환한 다음, 다시 챔버밖에서 순수(deionized water)로 세정하고, 세정후에 O2또는 O2/CF4가스를 사용하여 금속층위의 남아있는 감광막을 제거하는 순으로 진행된다.In the process of manufacturing a semiconductor device, the conventional method after the metal etching process is to replace the C1 group adsorbed to the metal (Al) by using the CF 4 or CHF 3 plasma in the chamber to the F group, and then pure outside the chamber washing with deionized water, followed by removing the remaining photoresist on the metal layer using O 2 or O 2 / CF 4 gas.

그런데, 상기한 종래의 방법에서는 CF4또는 CHF3에 의한 치환후에 금속 배선의 측면에 존재하는 폴리머(F기 포함)가 더욱 굳어지게 되어 이후의 처리 공정에서 잘 제거되지 않으며, 순수세정시에 Al2O3막의 성장을 방해하여 제품의 품질을 떨어뜨리는 단점이 있었다.However, in the conventional method described above, the polymer (including the F group) present on the side of the metal wiring becomes more hardened after substitution by CF 4 or CHF 3 , and is hardly removed in a subsequent processing step. There was a disadvantage in that the quality of the product was reduced by inhibiting the growth of the 2 O 3 membrane.

따라서, 본 발명의 목적은 금속식각 공정후에 메탈에 흡착되어 있는 C1기를 F기로 치환한 후, 금속배선의 측면에 존재하는 폴리머를 제거하는 공정을 실시함으로써 순수세정 및 감광막제거를 용이하게 하며 금속배선의 측면부에 Al2O3막의 성장을 쉽게 할 수 있는 금속배선 형성 처리방법을 제공하는데 있다.Accordingly, an object of the present invention is to replace the C1 group adsorbed on the metal group after the metal etching process to the F group, and then to remove the polymer present on the side of the metal wiring to facilitate the pure cleaning and removal of the photoresist film and to remove the metal wiring. The present invention provides a method for forming a metal wiring that can easily grow an Al 2 O 3 film on the side surface of the film.

상기 목적달성을 위한 본 발명의 방법은 금속식각공정후에 CF4또는 CHF3플라즈마로 C1기를 F기로 치환한 다음, O2플라즈마를 사용하여 금속배선의 측면 폴리머를 제거하는 공정이 추가된 것을 특징으로 한다.The method of the present invention for achieving the above object is characterized in that after the metal etching process by replacing the C1 group with CF 4 or CHF 3 plasma F group, and then using the O 2 plasma to remove the side polymer of the metal wiring do.

본 발명에 따른 O2플라즈마를 이용한 금속배선 측면 폴리머 제거공정은 예를들면, 200 내지 1500mTorr의 압력, 100 내지 1000와트(Watt)의 파워, 10 내지 100SCCM(Standard Cubic Centimeter)의 O2플라즈마 상태로 30 내지 200초 동안 진행된다.The metallization side polymer removal process using the O 2 plasma according to the present invention is, for example, at a pressure of 200 to 1500 mTorr, a power of 100 to 1000 Watts, and an O 2 plasma state of 10 to 100 SCCM (Standard Cubic Centimeter). For 30 to 200 seconds.

이렇게 O2플라즈마로 금속배선의 측면 폴리머를 제거한 후 순수세정을 완료하면 금속배선의 측면에는 Al2O3의 보호막이 생성되어 제품의 신뢰성 및 품질향상이 기대된다.After removing the side polymer of the metal wiring with O 2 plasma and completing pure cleaning, a protective film of Al 2 O 3 is formed on the side of the metal wiring to improve the reliability and quality of the product.

상술한 바와같이 본 발명에 의하면, 금속식각공정후에 금속(Al)에 흡착되어 있는 C1기를 F기로 치환한 다음, O2플라즈마를 사용하여 F기를 포함하고 있는 금속배선의 측면 폴리머를 제거해 줌으로써, 후속하는 순수세정 및 감광막 제거공정을 용이하게 해주며 금속배선의 측면부에 Al2O3의 보호막이 쉽게 성장할 수 있게 된다.As described above, according to the present invention, after the metal etching process, the C1 group adsorbed on the metal (Al) is replaced with the F group, and then the side polymer of the metal wiring including the F group is removed by using an O 2 plasma. This facilitates the pure cleaning and removal of the photoresist film, and the Al 2 O 3 protective film can be easily grown on the side of the metal wiring.

Claims (2)

반도체 디바이스 제조공정중 금속식각공정이후의 처리방법으로서, CF4또는 CHF3플라즈마를 이용하여 금속 흡착되어 있는 C1기를 F기를 치환하는 제1단계공정과, 순수(deionized water)로 세정하는 제2단계공정과, 남아있는 감광막을 제거하는 제3단계공정을 포함하는 금속배선 형성방법에 있어서, 상기 제1단계공정과 상기 제2단계 공정 사이에 O2플라즈마를 사용하여 금속배선의 측면 폴리머를 제거하는 공정을 더 포함하는 것을 특징으로 하는 반도체 디바이스의 금속배선 형성방법.As a treatment method after a metal etching process in a semiconductor device manufacturing process, a first step of substituting a F group of C1 groups adsorbed on a metal using CF 4 or CHF 3 plasma, and a second step of washing with deionized water A metal wiring forming method comprising a step and a third step of removing the remaining photoresist film, wherein the side polymer of the metal line is removed using an O 2 plasma between the first step and the second step. And forming a metal wiring in the semiconductor device. 제1항에 있어서, 상기 O2플라즈마를 사용하여 금속배선의 측면 폴리머를 제거하는 공정은, 200 내지 1500mTorr의 압력, 100 내지 1000와트(Watt)의 파워, 10 내지 100SCCM의 O2플라즈마 상태로 30 내지 200초동안 진행되는 것을 특징으로 하는 반도체 디바이스의 금속배선 형성방법.The method of claim 1, wherein the step of removing the side polymer of the metallization using the O 2 plasma, 30 to a pressure of 200 to 1500mTorr, power of 100 to 1000 Watts, O 2 plasma of 10 to 100SCCM The metal wiring forming method of a semiconductor device, characterized in that for about 200 seconds.
KR1019920009868A 1992-06-08 1992-06-08 Metal wiring method of semiconductor device Expired - Fee Related KR950006973B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920009868A KR950006973B1 (en) 1992-06-08 1992-06-08 Metal wiring method of semiconductor device

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Application Number Priority Date Filing Date Title
KR1019920009868A KR950006973B1 (en) 1992-06-08 1992-06-08 Metal wiring method of semiconductor device

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KR940001269A KR940001269A (en) 1994-01-11
KR950006973B1 true KR950006973B1 (en) 1995-06-26

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468694B1 (en) * 1997-10-13 2005-03-16 삼성전자주식회사 Method for forming contact for semiconductor device
KR101863547B1 (en) 2011-12-16 2018-06-05 삼성전자주식회사 Method and device for forming reflector in light emitting device package

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