KR980005370A - METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR - Google Patents
METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR Download PDFInfo
- Publication number
- KR980005370A KR980005370A KR1019960024536A KR19960024536A KR980005370A KR 980005370 A KR980005370 A KR 980005370A KR 1019960024536 A KR1019960024536 A KR 1019960024536A KR 19960024536 A KR19960024536 A KR 19960024536A KR 980005370 A KR980005370 A KR 980005370A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- film
- metal layer
- tan
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002184 metal Substances 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract 6
- 238000000137 annealing Methods 0.000 claims abstract 4
- 238000000151 deposition Methods 0.000 claims abstract 4
- 238000009792 diffusion process Methods 0.000 claims abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract 2
- 230000004888 barrier function Effects 0.000 claims abstract 2
- 229910052802 copper Inorganic materials 0.000 claims abstract 2
- 239000010949 copper Substances 0.000 claims abstract 2
- 238000005530 etching Methods 0.000 claims abstract 2
- 238000000059 patterning Methods 0.000 claims abstract 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 제조방법에 있어서, 금속 배선을 위한 금속층의 증착전에 열화학적으로 안정하고 금속층과 반응하지 않는 확산방지막을 형성함으로써, 금속 배선층에 대한 어닐링 시 발생되는 금속의 확산 현상을 방지 하여 금속 배선의 전기적 특성을 향상시킬 수 있는 반도체 소자의 금속 배선 형성방법에 관한 것으로, 반도체 기판 상부에 절연막을 형성하는 단계; 절연막의 소정 부분을 반도체 기판 상부의 표면의 일부분이 노출되도록 식각하여 콘택홀을 형성하는 단계; 결과물 상부에 확산 방지막으로 TaN 금속막을 증착하는 단계; 증착된 TaN 금속막을 어닐링하는 단계; 및, 결과물 상부에 금속층을 증착한 후 패턴화하는 단계를 포함하는 것을 특징으로 하고, 또한 금속층은 구리인 것을 특징으로 한다.The present invention relates to a method of manufacturing a semiconductor device, in which diffusion prevention film which is thermochemically stable and does not react with a metal layer is formed before a metal layer for metal wiring is deposited, thereby preventing diffusion of metal generated during annealing of the metal wiring layer A method of forming a metal wiring of a semiconductor device capable of improving electrical characteristics of a metal wiring, the method comprising: forming an insulating film on a semiconductor substrate; Etching a predetermined portion of the insulating film to expose a portion of the surface of the semiconductor substrate above the semiconductor substrate to form a contact hole; Depositing a TaN metal film as a diffusion barrier on the resultant product; Annealing the deposited TaN metal film; And depositing a metal layer on the resultant product and patterning the metal layer, wherein the metal layer is copper.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제1a도 내지 제1d도는 본 발명의 일 실시예에 따른 반도체 소자의 금속 배선 형성방법을 설명하기 위한 공정 단면도이다.FIGS. 1A to 1D are process cross-sectional views illustrating a method of forming a metal wiring of a semiconductor device according to an embodiment of the present invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960024536A KR980005370A (en) | 1996-06-27 | 1996-06-27 | METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960024536A KR980005370A (en) | 1996-06-27 | 1996-06-27 | METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR980005370A true KR980005370A (en) | 1998-03-30 |
Family
ID=66240511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960024536A Withdrawn KR980005370A (en) | 1996-06-27 | 1996-06-27 | METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR980005370A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100398034B1 (en) * | 2000-12-28 | 2003-09-19 | 주식회사 하이닉스반도체 | Method of forming a copper wiring in a semiconductor device |
| KR100738210B1 (en) * | 2005-12-29 | 2007-07-10 | 동부일렉트로닉스 주식회사 | Method of forming thin film and metal wiring in semiconductor device |
-
1996
- 1996-06-27 KR KR1019960024536A patent/KR980005370A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100398034B1 (en) * | 2000-12-28 | 2003-09-19 | 주식회사 하이닉스반도체 | Method of forming a copper wiring in a semiconductor device |
| KR100738210B1 (en) * | 2005-12-29 | 2007-07-10 | 동부일렉트로닉스 주식회사 | Method of forming thin film and metal wiring in semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19960627 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |