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SG11202011373SA - Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device - Google Patents

Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202011373SA
SG11202011373SA SG11202011373SA SG11202011373SA SG11202011373SA SG 11202011373S A SG11202011373S A SG 11202011373SA SG 11202011373S A SG11202011373S A SG 11202011373SA SG 11202011373S A SG11202011373S A SG 11202011373SA SG 11202011373S A SG11202011373S A SG 11202011373SA
Authority
SG
Singapore
Prior art keywords
reflective mask
manufacturing
semiconductor device
blank
manufacturing semiconductor
Prior art date
Application number
SG11202011373SA
Inventor
Yohei IKEBE
Tsutomu Shoki
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202011373SA publication Critical patent/SG11202011373SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202011373SA 2018-05-25 2019-05-24 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device SG11202011373SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018100363 2018-05-25
JP2018165248 2018-09-04
PCT/JP2019/020635 WO2019225737A1 (en) 2018-05-25 2019-05-24 Reflective mask blank, reflective mask, and methods for producing reflective mask and semiconductor device

Publications (1)

Publication Number Publication Date
SG11202011373SA true SG11202011373SA (en) 2020-12-30

Family

ID=68616158

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202011373SA SG11202011373SA (en) 2018-05-25 2019-05-24 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (4) US11550215B2 (en)
JP (2) JPWO2019225737A1 (en)
KR (1) KR20210013008A (en)
SG (1) SG11202011373SA (en)
TW (3) TWI867651B (en)
WO (1) WO2019225737A1 (en)

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SG11202011373SA (en) 2018-05-25 2020-12-30 Hoya Corp Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
JP6929983B1 (en) * 2020-03-10 2021-09-01 Hoya株式会社 Reflective Mask Blanks and Reflective Masks, and Methods for Manufacturing Semiconductor Devices
TWI886224B (en) * 2020-03-17 2025-06-11 日商Ｈｏｙａ股份有限公司 Photomask blank, method for manufacturing photomask, and method for manufacturing display device
JP7318607B2 (en) 2020-07-28 2023-08-01 Ａｇｃ株式会社 Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and manufacturing method thereof
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JP7525354B2 (en) * 2020-09-28 2024-07-30 株式会社トッパンフォトマスク Reflective photomask blanks and reflective photomasks
JP7380522B2 (en) * 2020-10-30 2023-11-15 信越化学工業株式会社 Phase shift mask blank, phase shift mask manufacturing method, and phase shift mask
KR102780958B1 (en) * 2020-12-03 2025-03-17 에이지씨 가부시키가이샤 Reflective mask blank for EUV lithography, reflective mask for EUV lithography and method for manufacturing them
KR102848045B1 (en) * 2021-01-27 2025-08-21 주식회사 에스앤에스텍 Phase Shift Blankmask and Photomask for EUV lithography
US11940725B2 (en) * 2021-01-27 2024-03-26 S&S Tech Co., Ltd. Phase shift blankmask and photomask for EUV lithography
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JP2022123773A (en) 2021-02-12 2022-08-24 株式会社トッパンフォトマスク Reflective photomask blanks and reflective photomasks
KR102837249B1 (en) * 2021-02-25 2025-07-22 주식회사 에스앤에스텍 Phase Shift Blankmask and Photomask for EUV lithography
JP7295215B2 (en) * 2021-02-25 2023-06-20 エスアンドエス テック カンパニー リミテッド Phase-shift blank mask and photomask for extreme ultraviolet lithography
KR102850182B1 (en) * 2021-06-15 2025-08-25 주식회사 에스앤에스텍 Phase Shift Blankmask and Photomask for EUV lithography
KR20240036734A (en) 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 Reflective mask blank, reflective mask, reflective mask blank manufacturing method, and reflective mask manufacturing method
WO2023095769A1 (en) * 2021-11-24 2023-06-01 株式会社トッパンフォトマスク Reflective photomask blank and reflective photomask
JP7272519B1 (en) * 2021-12-13 2023-05-12 Ａｇｃ株式会社 Reflective mask blank, reflective mask, method for manufacturing reflective mask blank, and method for manufacturing reflective mask
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KR102674790B1 (en) 2022-04-28 2024-06-14 에이지씨 가부시키가이샤 Reflective mask blank, reflective mask, manufacturing method of reflective mask
KR102851718B1 (en) 2022-10-13 2025-09-02 주식회사 에스앤에스텍 Phase Shift Blankmask and Photomask for EUV lithography

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SG11202011373SA (en) 2018-05-25 2020-12-30 Hoya Corp Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
US20210223681A1 (en) 2021-07-22
TW202349105A (en) 2023-12-16
US11815807B2 (en) 2023-11-14
US12105413B2 (en) 2024-10-01
TWI867651B (en) 2024-12-21
US20230087016A1 (en) 2023-03-23
US11550215B2 (en) 2023-01-10
JPWO2019225737A1 (en) 2021-06-10
TW202511858A (en) 2025-03-16
WO2019225737A1 (en) 2019-11-28
TWI811369B (en) 2023-08-11
US20240036458A1 (en) 2024-02-01
US20240393675A1 (en) 2024-11-28
JP2024153940A (en) 2024-10-29
TW202004326A (en) 2020-01-16
KR20210013008A (en) 2021-02-03

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