TW200535774A - Thin film transistor array substrate and repairing method thereof - Google Patents

Abstract

A thin film transistor array comprising a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, a plurality of pixel electrodes and a repair line is provided. The scan lines and the data line are disposed on the substrate to define a plurality of pixel areas. Each thin film transistor is located at one of the pixel areas respectively, and is driven by the corresponding scan line and data line. Each pixel electrode is located at one of the pixel areas respectively, and is electrically connected with the corresponding thin film transistor. A repairing method of the thin film transistor array mentioned above is also provided. The method is performed by forming a repairing line to reconnect a defect scan line. Therefore, a line defect resulted from the defect scan line can be repair as a one defect, two defects or zero defect.

Description

200535774 V. Description of the invention (1) The technical field to which the invention belongs The present invention relates to a thin film transistor array substrate (TFT array substrate) and a method for repairing the same, and more particularly, it relates to a scanning wiring (sca η 1 ine) or Thin film transistor array substrate for repairing at the broken line of common wild line (c 0 mm ο η 1 ine) and repair method thereof 0 Previous technology

In response to the rapid progress of the multimedia society, most of them have benefited from the rapid progress of semiconductor components or display devices. In terms of displays, cathode ray tubes (CRTs) have been dominating the display market in recent years because of their excellent display quality and economy. However, for the environment where individuals operate most terminals / display devices on the table, or from the perspective of environmental protection, if the trend of energy saving is predicted, there are still many problems in cathode ray tubes due to space utilization and energy consumption. Demands for light, thin, short, small, and low power consumption cannot effectively provide a solution. Therefore, thin film transistor liquid crystal displays (Th i n F i 1 m) with high image quality, good space utilization efficiency, low power consumption and no radiation

Transistor Liquid Crystal Display (TFT LCD) has gradually become the mainstream of the market. A thin film transistor liquid crystal display (TFT LCD) is mainly composed of a thin film transistor array substrate, a color filter array substrate, and a liquid crystal layer. The thin film transistor array substrate is composed of a plurality of thin film transistors arranged in an array ^, and Each thin film transistor is composed of a daylight electrode (pi 2 i ^ E 1 ectr ode) arranged correspondingly. The thin film transistor system is used as a liquid crystal display plant,

200535774 V. Description of the invention (2) Switching element of the unit. In addition, in order to control individual daylight units, scanning lines (Sca η 1 ine) and data lines (Date 1 ine) are usually used to select specific daylight elements, and appropriate operating voltages are applied to display corresponding responses. Display information of this day element. In addition, the partial area of the above-mentioned day element electrode is usually covered on the scanning wiring or the common wiring (C 〇mm ο η 1 ine). The overlapping portion is used as a storage capacitor (C st) so that Each day element in a thin film transistor liquid crystal display can be displayed normally. It is worth noting that the above thin film transistor array substrate may face a line defect / defect, and the line defect problem is usually caused by a break in the wiring (scanning wiring or common wiring) on the substrate. . When the scanning wiring on the substrate is broken, the daylight electrode connected to the broken portion of the scanning wiring cannot be displayed, and the storage capacitor formed after the broken portion of the scanning wiring cannot be displayed normally, which may cause Scrap of thin film transistor array substrates. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a thin film transistor array substrate and a repair method thereof, which can be repaired for broken lines of a scanning wiring or a common wild wire, so as to avoid scrapping the thin film transistor array substrate. Based on the above objectives, the present invention proposes a thin film transistor array substrate, which is mainly composed of a substrate, multiple scanning wirings, multiple data wirings, multiple thin film transistors, multiple day electrodes, and a repair circuit. The plurality of scanning wirings are arranged on the substrate, and the plurality of scanning wirings include at least one defective scanning wiring, and the defective scanning wiring has a broken line. Most of the data wiring is arranged on the substrate, and the scanning wiring is distinguished from the data wiring.

13437twf.ptd Page 8 200535774 V. Description of the invention (3) Multiple daylight regions. Each thin film transistor system is located in a corresponding pixel region, and the thin film transistor system is driven by scanning wiring and data wiring. Each pixel electrode is located in a corresponding pixel region to be electrically connected to a corresponding thin film transistor, and a portion of each day electrode is located above a corresponding scanning wiring to form a storage capacitor. The repairing line is located above the broken line to be electrically connected to the defective scanning wiring on both sides of the broken line. The repairing line is electrically insulated from the day electrode. Based on the above object, the present invention proposes a thin film transistor array substrate, which is mainly composed of a substrate, multiple scanning wirings, multiple data wirings, multiple thin film transistors, pixel electrodes, and a repair circuit. The plurality of scanning wirings are disposed on the substrate, and the plurality of scanning wirings include at least one defective scanning wiring, and the defective scanning wiring has a broken line. Most of the data wirings are arranged on the substrate, and the scanning wirings and the data wirings distinguish a plurality of daylight regions. Each thin film transistor system is located in a corresponding pixel region, and the thin film transistor system is driven by scanning wiring and data wiring. Each pixel electrode is located in the corresponding daylight region to be electrically connected to the corresponding thin film transistor, and a part of each daylight electrode is located above the corresponding scanning wiring to form a storage capacitor. The repair line is located above the broken line, and the repair line and at least one day electrode system are electrically connected to the defective scanning wiring on both sides of the broken line at the same time. Based on the above object, the present invention proposes a thin film transistor array substrate, which is mainly composed of a substrate, multiple scanning wirings, multiple data wirings, multiple thin film transistors, and multiple day electrodes. A plurality of scanning wirings are arranged on the substrate, and the plurality of scanning wirings include at least one defective scanning wiring.

13437twf.ptd Page 9 200535774 V. Description of the invention (4) This defect is on the substrate and the field. Each membrane electrode is electrically connected to the wiring board and a plurality of thin circuit wires. Each membrane transistor system is connected, and the upper line is based on the main membrane transistor. It is arranged in the pixel area. A thin pixel crystal is used to form a pixel circuit to form a middle repair line at a storage line. Above this, the supplementary circuit is mainly based on scanning the thin film by corresponding to each, and one by one. Multiple substrate domains. Membrane electrical electrodes The polarity of the electrode storage defects / defects are related to the description by a wiring scanning transistor scanning day paintings to form defects / defects, a plurality of substrates, each crystal is connected. Partially-capacitive, common substrates have a wiring and system-level wiring. The prime region is a prime electrode. A storage scan system is provided with the present invention. These wiring harnesses are provided with electrodes on both sides of the present invention, and a plurality of disconnected places. The data wiring is in the corresponding and data distribution, and part of the capacitance. The line electrical connection proposes a scanning wiring electrode, and a plurality of lines are arranged in the scanning wiring and the transistor system. The scanning wiring common area is located in the corresponding common wiring and has a broken common defect insulation. This paper proposes a scanning wiring method that distinguishes multiple lines in a multi-pixel area from line driving. Each corresponding thin-film domain is located at least one day in the center of the thin-film transistor, and multiple materials share wiring on the substrate. The multiple data wiring system is located in the corresponding and data distribution domains, and includes at least parts of the common wiring arranged on the substrate. The electrical wiring for the repair line is a picture of an element array array of a transistor and a number of daylight line drivers. The last defect position is connected to the thin daylight body scanning electrode in the prime area. Department of base, multi-repaired data and multi-regional movement. It is thin and thin on each side, and its thin-film transistor array and multiple data wiring

13437twf.ptd Page 10 200535774 V. Description of the invention (5) Thin film transistor, multiple day electrode, multiple common wiring and a repair circuit. A plurality of scan wirings are arranged on the substrate. Most of the data wirings are arranged on a substrate, and the scanning wirings and the data wirings distinguish a plurality of daylight regions. Each thin film transistor system is located in a corresponding daylight region. The thin film transistor system is driven by scanning wiring and data wiring. Each pixel electrode is located in a corresponding daylight region to be electrically connected to a corresponding thin film transistor. A plurality of common wirings are arranged on the substrate, and a part of each day element electrode is located above the corresponding common wirings to form a storage capacitor, and the common wirings include at least one defective common wiring. The defective common wiring Has a broken line. The repair circuit and the at least one element electrode are electrically connected to the defect common wiring on both sides of the disconnection at the same time. Based on the above objectives, the present invention proposes a thin film transistor array substrate, which is mainly composed of a substrate, multiple scanning wirings, multiple data wirings, multiple thin film transistors, multiple pixel electrodes, and multiple common wirings. A plurality of scan wirings are arranged on the substrate. Most of the data wirings are arranged on the substrate, and the scanning wirings and the data wirings are used to distinguish most of the daylight regions. Each thin film transistor system is located in a corresponding pixel region, and the thin film transistor system is driven by scanning wiring and data wiring. Each pixel electrode is located in a corresponding daylight region to be electrically connected to a corresponding thin film transistor. A plurality of common wirings are arranged on the substrate, and a part of each day element electrode is located above the corresponding common wirings to constitute a storage capacitor, and the common wirings include at least one defective common wiring. Has a broken line. Among them, at least one day electrode is disconnected

13437twf.ptd Page 11 200535774 V. Description of the Invention (6) Defects on both sides of the wire share the electrical connection of the wiring. Based on the above objectives, the present invention provides a method for repairing a thin film transistor array substrate, which is suitable for a thin film capacitor having a storage capacitor on a gate (C st 0 n Gate) or a storage capacitor on a common wiring (Cst On Common line). The crystal array substrate is repaired. This repair method first removes a part of at least one day electrode adjacent to the disconnection of a scanning wiring or a common wiring; then, a repair circuit is formed above the disconnection, and The scanning wiring or common wiring on both sides of the disconnection is electrically connected, and the repairing circuit is electrically insulated from the pixel electrode. Based on the above objectives, the present invention provides a method for repairing a thin film transistor array substrate, which is suitable for repairing a thin film transistor array substrate having a storage capacitor on a gate electrode or a storage capacitor on a common wiring. A partial area of at least one pixel electrode of a scanning wiring or a common wiring, so that a part of the day electrode is electrically connected to the scanning wiring or the common wiring on both sides of the broken wiring. Based on the above objectives, the present invention provides a method for repairing a thin film transistor array substrate, which is suitable for repairing a thin film transistor array substrate with a storage capacitor on a gate or a storage capacitor on a common wiring. At least one day electrode at the break of the scanning wiring or a common wiring is electrically connected to the scanning wiring or the common wiring on both sides of the breaking wiring. The present invention mainly forms a repair line when the scanning wiring or the common wiring on the thin film transistor array substrate is disconnected, and electrically connects this repairing circuit to the scanning wiring or the common wiring on both sides of the disconnection. To achieve the purpose of repairing the defective scanning wiring or the defective common wiring. In addition, also

13437twf.ptd Page 12 200535774 V. Description of the invention (7) The daylight electrode above the disconnection can be directly connected to the scanning wiring or common wiring on both sides of the disconnection, so as to repair the defective scanning wiring. Or the purpose of the defective common wiring. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, several preferred embodiments are exemplified below, and described in detail with the accompanying drawings. Embodiment FIG. 1 is a schematic structural diagram of a thin film transistor array substrate with a storage capacitor on a gate. Please refer to FIG. 1, the thin film transistor array substrate is mainly composed of a substrate 100, a plurality of scanning wirings 1 10, a plurality of data wirings 1 2 0, a plurality of thin film transistors 1 3 0, and a plurality of day electrode 1 4 0. A plurality of scanning wirings 1 10 and a plurality of data wirings 1 2 0 are arranged on the substrate 100, and the scanning wirings 1 10 and the data wirings 1 2 0 distinguish a plurality of pixel regions 1 2 2. Each thin film transistor 130 is located in the corresponding daylight region 1 22, and the thin film transistor 130 is driven by the scanning wiring 1 10 and the data wiring 120. Each pixel electrode 140 is located in a corresponding pixel region 1 2 2 to be electrically connected to a corresponding thin film transistor 130. In addition, a partial area of each day element electrode 140 is located above the corresponding scanning wiring 110 to form a storage capacitor. In accordance with the above, the storage capacitor is formed by coupling the scanning wiring 1 1 0 with the day element electrode 1 40 thereon. The scanning line 1 1 0 and the day element electrode 1 4 0 are usually separated by a dielectric layer (gate Insulation and / or protective layer). It is worth noting that, due to process defects or other factors, at least one defect in scanning wiring 1 1 0 is likely to occur. Scanning wiring 1 1 0 a, defective

13437twf.ptd Page 13 200535774

V. Description of the invention (8) When the scanning wiring 1 1 〇a has a defective scanning wiring 丨 丨 a, the pixel electrode 140 connected to the scanning wiring 1 10 will be positive and accurate. After the disconnection, the wiring will be scanned 11a / no for defects. Therefore, the present invention is located between 120% of the material wiring or at any%. A is located at any of the two supplementary "scanning wiring, repairing, and second and second scanning supplementary repair methods. The # method in Fig. 1 is, for example, Above the broken line A :: J: In the second trace wiring 20 二, its = method is, for example, laser-shift == mouth 142, a part of the m-day element electrode 140 is removed to form an open circuit 150, for example, + ^ A repairing line 150 is formed in the opening l42. The repairing line 150 is formed by laser vapor deposition (Laser CVD). The repairing line 150 described above is formed by laser, for example. The defective scanning wiring 1 1 〇a is electrically connected. Bit hot ϊ ί, 参照 Referring to FIG. 2B, when the broken scanning wiring 1 1 0a breaks A 11〇! 2: 1: under the wiring 120, repair the defective scanning wiring section 8, Ϊ ΐ ί The method of removing / removing the two pixel electrodes 14 o adjacent to the broken line A is, for example, a laser shifting method to separate $:?, For example, the edge of the two pixel electrodes 14 o The knife is removed to form a gap 144. Next, a repair line is formed 50 in the gap

200535774 V. Description of the invention (9) 144 is to cross the data wiring 120, and the repairing circuit 15 is formed by, for example, laser chemical vapor deposition. It is worth noting that the repair line 150 mentioned above is electrically connected to the defect scanning lines 1 1 0 a on both sides of the broken line a by, for example, laser welding.

As mentioned above, it can be known from the repairing methods disclosed in FIGS. 2A to 2B that the repaired circuit 15 and the laser-treated day electrode 14 14 are electrically insulated from each other, so the pixels after laser repair The electrode 14o can still display normally. Next, referring to FIG. 2C in a month, when the defect scanning wiring] i & breaks the hole A, below one of the data ίline 120, the method of repairing the defective scanning wiring 110a is to first disconnect the The two element electrodes 14a adjacent to the line a are divided into a display portion 140a and a repair portion u0b, and HOa is electrically insulated from the repair portion 14b. The method of the present embodiment is, for example, a laser removal method. Next, a one-to-one repair line 150 is formed above the broken line A to make a repair connection. It is worth noting that the repairing circuit 15 is electrically connected to the defect sharing part 14 on both sides of the line A at the same time by means of laser welding, for example. 〇β and fill in the next, please refer to Figure 2D, when the defective scanning wiring is located between any two data wiring 120, the method of repairing the broken line eight of Ua is, for example, first drawing a sketch above the broken line A ^ Wiring 11 "Display part 1 4 0 a and a display part 1 4 0 a surround the repair °, 0 is divided into a display so that the display part 1 4 0 a and the repair part 1 4 0 b are electrically isolated. Part 1 4 0 b 'The method of dividing the day element electrode 1 40 is, for example, the method of Chen in this embodiment.

13437twf.ptd Page 15 200535774 Description of the invention (10), then the repair part * 140b is electrically connected to the noa on both sides of the disconnection A. In this embodiment, the repair of the part 14 and the wiring on the side of the wiring side scan the electrical connection of the wiring 110a, as described above, as disclosed in FIG. 2C and FIG. 2D— '~~ ^^ . The repair of τ corpse exposure is performed by electrically connecting the celestial electrode adjacent to the broken line A with the 400,000-type defect scanning wiring 110a on both sides, which can be repaired. It is worth noting that due to the pixels The display portion 140a and the disk repair portion 140b of the electrode 丨 40 are electrically insulated from each other, so the display portion 140a of the day element electrode 140 can still display normally without being affected by the repair process. Next, referring to FIG. 2E, when the broken line a of the defective scanning wiring 丨 丨 a is located between any two of the material wirings 120, the method of repairing the defective scanning wiring 丨 〇a is, for example, laser. The welding method directly connects the daytime electrode 1 40 above the broken line A with the defective scanning wiring on both sides of the broken line 丨 丨 a. In this case, because the defective scanning wiring 丨 10a is borrowed The repair is achieved by the day element electrode 1 40 above the broken line A. Therefore, the original line defect can be improved to an early defect. Then, please refer to FIG. 2F. When the defect When the broken line A of the scan line 1 1 〇a is located below one of the data lines 1 2 0, the method of repairing the defective scan line 1 1 0 a is to form a repair line 1 5 above the broken line a 0 c The repairing circuit 150 in this embodiment is formed by, for example, a laser chemical vapor deposition method. It is worth noting that the repair line 丨 5 〇, for example, by laser welding at the same time with the flaws on both sides of the broken line A 1 1 〇 a and located at

13437twf.ptd Page 16 200535774 V. Description of the invention (11) The celestial electrodes 14 on both sides of the broken line are electrically connected. As mentioned above, from the repair methods disclosed in Fig. 2E and Fig. 2F, it can be known that by directly scanning the wiring 1 1 0 a with defects on both sides of the broken line A 1 on the day electrode 1 4 0 The method can also achieve the purpose of repairing line defects. · As mentioned above, the above-mentioned embodiments all describe repairing broken lines of defective scanning wiring in detail. Anyone familiar with the art should know that the repair method of the present invention is not limited to repairing defective scanning wiring. Defect common lines disposed on the thin film transistor array substrate may also be repaired. Because the common wiring is usually designed between every two adjacent scanning wirings, and the local area of the day element electrode will cover the common wiring to form a storage capacitor structure (C st _ on common) on the common wiring, so when the common wiring In the case of disconnection of the Zhongweiwei common wiring, there will also be problems of wire defects. Based on this, the present invention proposes another repair method for repairing defective common wiring. Figures 3A to 3F are schematic diagrams showing the repair of defective common wiring by the repair method of the present invention. Among them, the thin-film transistor array substrate in FIGS. 3A to 3F is a thin-film transistor array substrate with storage capacitors on a common line (Cst on Common line). Its main structure is the same as that in FIGS. 2A to 2F, so it is only for the technical phase. The differences are explained in detail below. In the architecture of storage capacitors on the common wiring (Cst on common), in addition to a plurality of scanning wirings 1 1 0 arranged on the substrate 100, there are two scanning wirings 1 1 0 adjacent to each other. Common wiring 1 6 0. The storage capacitor in each pixel is composed of a partial area of the day electrode 140 and the common wiring 160 above it. Similarly, between the common wiring 16 0 and the day electrode 1 40

13437twf.ptd Page 17 200535774 V. Description of the invention (12) Usually a dielectric sound is used (reader is unavoidable, shared ^ wire 丨 60 ° insulation layer and / or protective layer). Defect common wiring 160a, and at least one defect may appear in the defect common sense. Please refer to FIG. 3A, when the defect & wiring 16a has a broken line B. When the two data wirings 1 2 0, /, the gray wire 1 6 0 a of the broken line B is located above any of the pixel electrodes " 〇 的 部 ^ 八 > Remove the broken line 1 4 2 first, and then remove the middle area 2 in the opening 丨 2 2 to form an opening to repair the line 150 and the two sides of the broken line ^ defect; repair the line 150 so that the repair can reach The common wiring for repairing the tortoise 1 6 is connected to the common wiring 16 0 a electrically. Please refer to FIG. 3B. The partial area of the pole 1 40 is removed to divide the daylight electrical display area 1 4 0 a above the B line. The electrical insulation repair area ^ 4 ° 〇 a display area 1 4 0 a and a Defective common wiring 16a 'on both sides of the broken line B, and then the repair area 140b and please refer to FIG. 3C, the present invention can also be broken., 14 0 is directly connected to the broken line by laser welding. The pixel electrode lines 160a are electrically connected. Defective common distribution on both sides of line B. Please refer to FIG. 3D. When the defective common wiring 丨 is under one of the data wiring 120, the broken line B of 1 repair order a is displaced, and the broken line B is related to W In the two pixel electrodes 丨 4 〇, a gap is formed at the edge of the pixel electrode 140 respectively; a repair line 15 across the data wiring 120 is formed, and then a cloth is formed in the gap 144 and repaired at the same time Line 15 & bathroom line 150 is electrically connected to the sheltered common wiring 16a. The defect is on the two sides of the broken line B. Please refer to FIG. 3E. In the present invention, the two adjacent lines of the broken line β can also be removed first.

13437twf.ptd Page 18 200535774 V. Description of the invention (13) Partial area of day element electrode 1 40 to divide a display area 1 4 0 a and a repair area 1 electrically insulated from a display area 1 4 0 a 4 0 b, and then form a repair line 15 0 across the data wiring 1 2 0, and at the same time, repair the repair line 15 and repair area 1 4 0 b and the defect on both sides of the broken line B 1 6 0 a Electrical connection. Please refer to FIG. 3F, the present invention can also directly form a repair line 150 that crosses the data wiring 120, and repair the defects on both sides of the repair line 150 and the broken line B by laser welding. The common wiring is electrically connected. In summary, the repair method of the present invention mainly has the following advantages: 1. The repair method of the present invention can easily repair line defects caused by disconnection of scanning wiring or common wiring, and has high practicability. 2 · The repair method of the present invention can repair line defects into two defects, one defect, or even zero defect, so as to greatly improve the yield. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application.

13437twf.ptd Page 19 200535774 Brief Description of Drawings Figure 1 shows the structure of a thin film transistor array substrate with a storage capacitor on the gate, which is not intended. 2A to 2F are schematic diagrams of repairing the defective scanning wiring in FIG. 1 by the repair method of the present invention. 3A to 3F are schematic diagrams of repairing a defect common wiring by the repair method of the present invention. [Schematic description] 1 0 0: Substrate

1 10 1 10a 120 122 130 140 140a 140b 142 144 150 160 160a A ^ B Scanning Wiring: Defect Scanning Wiring Information Wiring Element Area Thin Film Transistor Electrode. Display Area: Repair Area Opening Gap Repair Line Common Wiring: Defect Common wiring break

13437twf.ptd Page 20

Claims (1)

200535774 VI. Scope of patent application 1. A thin film transistor array substrate comprising: a substrate; a plurality of scanning wirings arranged on the substrate, the scanning wirings including at least one defective scanning wiring, the defective scanning wiring having a break Lines;. A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings distinguish a plurality of daylight regions; a plurality of thin film transistors, each of which is located in a thin film transistor system. Within one of the pixel regions, where the thin film transistor systems are driven by the scanning wirings and the data wirings, a plurality of pixel electrodes, each of the pixel electrodes are located in the pixels® One of the regions is electrically connected to one of the corresponding thin film transistors, and a part of each of the celestial electrodes is located above one of the corresponding scanning wirings to form a A storage capacitor; and a repair line located above the disconnection to be electrically connected to the defective scanning wiring on both sides of the disconnection, wherein the repair The supplementary line is electrically insulated from the day electrodes. 2. According to the thin film transistor array substrate described in item 1 of the scope of the patent application, when the broken line of the defective scanning wiring is located between two of the data wirings, one of the daylight electrodes has a An opening corresponding to the broken line, and the repairing line is located in the opening, so as to be electrically insulated from one of the celestial electrodes. 3. According to the thin film transistor array substrate described in item 1 of the scope of patent application, when the broken line of the defective scanning wiring is located in the data wirings 13437twf.ptd Page 21 200535774 VI. When one of the patent application scopes is below, there is a gap at the edge of the diurnal electrode adjacent to the broken line, where the repair line crosses one of the data wirings. One, and is distributed in the gaps to be electrically insulated from the day electrodes. 4. A thin-film transistor array substrate comprising: a substrate; a plurality of scanning wirings disposed on the substrate, the scanning wirings including at least one defective scanning wiring, the defective scanning wiring having a broken line, and most data Wiring is arranged on the substrate, wherein the scanning wirings and the data wirings distinguish a plurality of celestial regions; a plurality of thin film transistors, each of which is located in one of the celestial regions The thin film transistor system is driven by the scanning wirings and the data wirings; a plurality of pixel electrodes, each of which is located in one of the daylight regions to correspond to One of the thin film transistors is electrically connected, and a partial area of each of the daylight electrodes is located above one of the corresponding scanning wirings to form a storage capacitor; and a repair circuit is located at Above the disconnection, the repair line and at least one of the day electrodes are simultaneously electrically connected to the defective scanning wiring on both sides of the disconnection. connection. 5. According to the thin film transistor array substrate described in item 4 of the scope of patent application, when the broken line of the defective scanning wiring is located under one of the data wirings, the broken line of the defective scanning wiring The two adjacent pixel electrodes include: 13437twf.ptd Page 22 200535774 VI. Application scope: a display part; and a repair part, which is electrically insulated from the display part, wherein the repair line and the repair part are scanned simultaneously with the defects on both sides of the broken line Wiring is electrically connected. 6. A thin film transistor array substrate comprising: a substrate; a plurality of scanning wirings arranged on the substrate, the scanning wirings including at least one defective scanning wiring, the defective scanning wiring having a broken line, a plurality of The data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings distinguish a plurality of daylight regions; a plurality of thin film transistors, each of which is located in one of the pixel regions. In one, the thin film transistor systems are driven by the scanning wirings and the data wirings; and a plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions to It is electrically connected to one of the corresponding thin film transistors, and a part of each of the pixel electrodes is located above one of the corresponding scanning wirings to form a storage capacitor. At least one of the element electrodes is electrically connected to the defective scanning wiring on both sides of the disconnection. 7. According to the thin film transistor array substrate described in item 6 of the scope of patent application, when the broken line of the defective scanning wiring is located between two of the data wirings, one of the daylight electrodes includes: A display section; and 13437twf.ptd Page 23 200535774 VI. Patent application scope Road and line electrical 8. Board, when part, is electrically insulated from the display part, where the repair line repair part is simultaneously with the defect on both sides of the broken line Scanning and repairing the repair connection. If the defect is repaired under the patent claim, the repair patent coverage defect includes wiring, the repairing wiring, one of the defect scanning film transistors on both sides of the line, and many lines and the Multi-pixel area drawing wiring, multi-area connection of multiple electrodes, to share 9 · a kind of a substrate, a number of fields, a number of fields, and a number of scanning wiring, data wiring, material wiring system film Within one of the transistors, the data distribution pixel electrodes' are located within the data wiring with the disconnection of the thin-film transistor array base described in item 6, and the supplementary wiring is across the data wiring. The adjacent two dielectrolyte electrodes at the broken line and the broken wiring are electrically connected to each other. An array substrate includes: disposed on the substrate; disposed on the substrate, wherein the scans allocate a plurality of daylight regions; and each of the thin film transistor systems is located in the thin film transistor systems by The scanning lines are driven; each of the pixel electrodes is located on one of the thin film transistors corresponding to the pixels, and a plurality of common wirings are arranged on the substrate, and each of the pixel partial areas A storage capacitor is formed on the corresponding one of the common wirings, and the common wirings include at least one defective wiring, the defective common wiring has a broken line; and 13437twf.ptd Page 24 200535774 VI. Patent application scope A repair line is located above the broken line to be electrically connected to the defective scanning wiring on both sides of the broken line, where the repair line is connected to the pixels The electrodes are electrically insulated. 10. According to the thin film transistor array substrate described in item 9 of the scope of patent application, when the broken line of the defective common wiring is located between two of the data wirings, one of the daylight electrodes has An opening corresponding to the broken line, and the repair line is located in the opening to be electrically insulated from one of the day electrodes. Π. According to the thin film transistor array substrate described in item 9 of the scope of the patent application, when the disconnection of the defective common wiring is below one of the data wirings, the two adjacent to the disconnection are drawn There is a gap at the edge of the pixel electrode, wherein the repairing line crosses one of the data wirings and is distributed in the gaps so as to be electrically insulated from the pixel electrodes. 1 2. A thin film transistor array substrate comprising: a substrate; a plurality of scanning wirings arranged on the substrate; a plurality of data wirings arranged on the substrate, wherein the scanning wirings are distinguished from the data wirings A plurality of thin film transistors, each of the thin film transistor systems is located in one of the plurality of thin film regions, wherein the thin film transistor systems are provided by the scanning wirings and the data wirings Driving; a plurality of pixel electrodes, each of which is located in one of the pixel regions so as to be electrically connected to one of the corresponding thin film transistors; 13437twf.ptd Page 25 200535774 VI. The scope of patent application Most common wiring is arranged on the substrate, and a part of each of the daylight electrodes is located above one of the corresponding common wirings to constitute A storage capacitor, and the common wirings include at least one defective common wiring, the defective common wiring has a broken line; and a repair line located above the broken line, wherein the repair line and the daylight electrodes are at least One of them is electrically connected to the defective common wiring on both sides of the disconnection at the same time. 1 3. According to the thin film transistor array substrate described in Item 12 of the scope of the patent application, when the disconnection of the defective common wiring is below one of the data wirings, the interruption of the common wiring with the defective The two adjacent pixel electrodes at the line respectively include: a display portion; and a repair portion electrically insulated from the display portion, wherein the repair line and the repair portion are shared with the defects on both sides of the disconnection at the same time Wiring is electrically connected. 1 4. A thin film transistor array substrate comprising: a substrate; a plurality of scanning wirings arranged on the substrate; a plurality of data wirings arranged on the substrate, wherein the scanning wirings are distinguished from the data wirings A plurality of thin film transistors; each of the thin film transistor systems is located in one of the plurality of thin film transistors, wherein the thin film transistor systems are driven by the scanning wirings and the data wirings ; A plurality of celestial electrodes, each of which is located at the pixels 13437twf.ptd Page 26 200535774 6. One of the patent application areas is electrically connected to one of the corresponding thin film transistors; and a plurality of common wirings are arranged on the substrate, and each of the Some regions of the day electrode are located above one of the corresponding common wirings to constitute a storage capacitor, and the common wirings include at least one defective common wiring having a broken line, At least one of the pixel electrodes is electrically connected to the defective common wiring on both sides of the disconnection. 1 5. According to the thin film transistor array substrate described in item 14 of the scope of patent application, when the disconnection of the defective common wiring is between two of the data wirings, one of the daylight electrodes It includes: a display part; and a repair part, which is electrically insulated from the display part, wherein the repair line and the repair part are electrically connected to the defective common wiring on both sides of the disconnection at the same time. 16. According to the thin film transistor array substrate described in item 14 of the scope of the patent application, when the broken line of the defective common wiring is located under one of the data wirings, it further includes: a repair line, the The repairing line crosses one of the data wirings, and the repairing wiring, the diurnal electrode adjacent to the broken line, and the defective common wiring on both sides of the broken line are electrically connected to each other. 1 7. A method for repairing a thin film transistor array substrate, suitable for a thin film transistor array having a storage capacitor on a gate (Cst on gate) or a storage capacitor on a common wiring (C st ο nc 〇mm ο η) Substrate repair, the 13437twf.ptd Page 27 200535774 VI. Patent application repair method includes: removing a part of at least one day electrode adjacent to a broken line of a scanning wiring or a common wiring; and forming a repairing line in the Above the broken line, the repair line is electrically connected with the scanning wiring or the common wiring on both sides of the broken line, wherein the repair line is electrically insulated from the day electrode. 1 8. According to the method for repairing the thin film transistor array substrate described in item 17 of the scope of patent application, when the disconnection of the scanning wiring or the common wiring is between two data wirings, the daylight element is removed. The step of a part of the electrode includes: forming an opening in the day electrode corresponding to the broken line, wherein the repair line is located in the opening and is shared with the scanning wiring or the two sides of the broken line Wiring is electrically connected. 1 9. According to the method for repairing a thin film transistor array substrate described in item 17 of the scope of patent application, when the disconnection of the scanning wiring or the common wiring is below a data wiring, the day element is removed therefrom. The steps of the partial area of the electrode include: forming a gap at the edge of the diuretic electrode adjacent to the broken line, and the repair line is across the data wiring, wherein the repair line is distributed in the gaps . 20. The method for repairing a thin film transistor array substrate according to item 17 of the scope of the patent application, wherein the method for removing a part of the region adjacent to the day electrode includes laser removal. 2 1. The thin film transistor array substrate as described in item 17 of the scope of patent application 13437twf.ptd Page 28 200535774 6. Scope of Patent Application The method for repairing the board, wherein the method for forming the repair circuit includes laser chemical vapor deposition. 2 2. A method for repairing a thin film transistor array substrate, which is suitable for repairing a thin film transistor array substrate having a storage capacitor on a gate electrode or a storage capacitor on a common wiring. The repair method includes: A portion of the wiring or at least one pixel electrode at a disconnection of a common wiring so that part of the day electrode is electrically connected to the scanning wiring or the common wiring at both sides of the disconnection. 2 3. According to the method for repairing the thin film transistor array substrate described in item 22 of the scope of the patent application, when the disconnection of the scanning wiring or the common wiring is between the two data wirings, the pixel electrode is removed. The steps of a partial area include: cutting the day element electrode so that the day element electrode is divided into a display portion and a repair portion, wherein the display portion is electrically insulated from the repair portion, and the repair portion is connected to the broken line The scanning wiring or the common wiring on both sides is electrically connected. 2 4. The method for repairing the thin film transistor array substrate according to item 22 of the scope of the patent application, when the disconnection of the scanning wiring or the common wiring is below a data wiring, the daylight electrode is removed. The steps of the partial region include: cutting the day element electrode to divide the day element electrode into a display portion and a repair portion, wherein the display portion is electrically insulated from the repair portion; and forming a repair line above the disconnection, The repairing line and the repairing portion are simultaneously connected to the scanning wiring or the common wiring on both sides of the disconnection. 13437twf.ptd Page 29 200535774 VI. Patent Application Scope Connection. 25. The method for repairing a thin film transistor array substrate according to item 22 of the scope of the patent application, wherein the method of removing a part of the area adjacent to the pixel electrode includes laser removal. 2 6. The method for repairing a thin film transistor array substrate according to item 22 of the scope of the patent application, wherein the method for forming the repair circuit includes laser chemical vapor deposition. 2 7. —A method for repairing a thin film transistor array substrate, which is suitable for repairing a thin film transistor array substrate with a storage capacitor on a gate or a storage capacitor on a common wiring. The repair method includes: Or at least one day electrode at a disconnection of a common wiring is electrically connected to the scanning wiring or the common wiring on both sides of the disconnection. 2 8. The method for repairing the thin film transistor array substrate according to item 27 of the scope of the patent application, when the disconnection of the scanning wiring or the common wiring is below a data wiring, it further includes: forming a repairing circuit Above the broken line, the repair line and two pixel electrodes adjacent to the broken line are simultaneously electrically connected to the scanning wiring or the common wiring on both sides of the broken line. 2 9. The method for repairing the thin film transistor array substrate according to item 27 of the scope of the patent application, wherein the method of electrically connecting the scanning wiring or the common wiring on both sides of the disconnection includes laser welding. 13437twf.ptd Page 30