200925307 九、發明說明 【發明所屬之技術領域】 本發明係關於在用來在藉由反應性濺鍍法進行 基板表面形成預定的薄膜之濺鍍裝置。 【先前技術】 作爲在玻璃、矽晶圓等的基板表面形成預定的 Φ 方法之一，具有濺鍍（以下稱爲「濺鍍」）法。此 係使電漿環境中的離子，朝因應欲形成於基板表面 的組成所製作之標靶加速並衝撃，來使濺鍍粒子（ 子）飛散，附著、堆積於基板表面來形成預定的薄 此時，同時導入氧氣、氮氣等的反應氣體，藉由反 鍍用以獲得該薄膜。 利用這種濺鑛法來形成薄膜之形成方法，近年 用於，在使用TFT (薄膜電晶體）之液晶顯示器（ 〇 的製造製程，在大面積的玻璃基板表面，形成ιτο 明電導膜、作爲閘極之電氣傳導特性佳的Cu等的 及提高與該金屬膜之密接性的氧化物膜》 以往，作爲對大面積的基板有效地形成薄膜之 置，如專利文獻1爲眾所皆知，該裝置係在真空室 處理基板相對向地並列設置有複數片的標靶，設置 電源，其在並列設置之標靶中，對每個成對之標靶 定的頻率交互地改變極性來施加電壓，將各標靶交 換成陽極電極、陰極電極，使得在陽極電極及陰極 處理之 薄膜的 濺鍍法 之薄膜 標靶原 膜者。 應性濺 亦被利 FPD ) 等的透 金屬膜 濺鍍裝 內，與 有交流 ，以預 互地切 電極間 -5- 200925307 產生輝光放電，來形成電漿環境，對各標靶進行濺鍍。 在此，在使用前述結構的濺鍍裝置，藉由反應性濺鍍 來進行薄膜形.成之情況，不僅是能夠以均等的膜厚來成膜 於基板全面範圍，且需要防止反應氣體偏移導入至濺鍍室 ，在基板面內之反應性上產生不均，造成在基板面內，比 阻抗値等的膜質不均等。因此，下述專利文獻2這種的方 式爲眾所皆知，即，在所並列設置的各標靶相互間的各間 @ 隙，沿著標靶之長側面設置導入濺鍍氣體、反應氣體等之 氣體管，藉由氣體管，從各標靶相互間的各間隙對基板噴 出氣體。 如專利文獻1所記載般，在與基板相對向並列設置了 複數片的標靶之情況，當進行薄膜形成時，由各標靶相互 間的各間隙不會釋出濺鍍粒子。因此，爲了獲得在遍及基 板全面之均等的膜厚分佈，期望儘可能地將未釋出有濺鍍 粒子之此空間縮小，但如專利文獻2這種設置氣體管者， 0 在縮小此空間上會有界限。又，在此小的空間，配置具有 預定的外徑之氣體管一事極爲困難，且裝置結構變得複雜 其組裝作業變得困難。 因此，藉由將延伸於各標靶之並列設置方向的至少1 支的氣體供給管從各標靶之裏面分離並設置，再從形成於 此氣體供給管之噴射口噴射反應氣體，能夠將反應氣體在 與所並列設置的各標靶之濺鍍面背向之（背面側）的空間 暫時擴散，然後透過標靶相互間的各間隙朝基板進行供給 之結構，爲本案申請人所提案（特願2007-120708號）。 200925307 [專利文獻1]日本特開2005-290550號公報 【發明內容】 [發明所欲解決之課題] 在此’在這種的濺鍍裝置，於標靶之背面側的空間， 通常收納有，形成於各標靶之前方的隧道狀的磁通之磁鐵 組裝體及以一體的方式使該各磁鐵組裝體往復移動的驅動 Q 手段、對接合於標靶之補償板供給冷媒之冷媒供給路等複 數個零件，並且，連通於將濺鍍室進行真空排氣用之真空 排氣手段的排氣口，在標靶背面側形成於真空室的壁面。 因此，前述般，即使藉由從形成於氣體供給管之噴射 口噴射反應氣體，使反應氣體在標靶之背面側的空間暫時 擴散，也會因裝置結構，造成局部產生氣體聚集，反應氣 體通過各標靶相互間的間隙中任一間隙偏移導入而供給至 基板之虞產生。 〇 因此，本發明是爲了解決前述問題點而開發完成的發 明，其課題在於提供，可在基板全面範圍，大致均等地供 給反應氣體，將膜厚分佈、比阻抗値等的膜質在基板全面 大致作成爲均等，且構造簡單的濺鍍裝置。 [用以解決課題之手段] 爲了解決前述課題，第1發明的濺鍍裝置係具備有： 隔著預定的間隔並列設置於濺鍍室內之複數片的標靶；對 各標靶可投入電力之濺鍍電源；對濺鍍室可導入濺鍍氣體 200925307 及反應氣體之氣體導入手段，將前述反應氣體導入至濺镀 室之氣體導入手段具有至少1支的氣體供給管，此氣體供 給管是在並列設置的各標靶之背面側，由各標靶分離地配 置著，並且形成有用來噴射反應氣體之噴射口的濺鍍裝置 ，其特徵爲：設有調節手段，其可調整通過前述標靶相互 間的各間隙所流動之前述反應氣體之流量。 若根據本發明的話，當從形成於設置在各標靶背面側 ϋ 之至少1支的氣體供給管的噴射口噴射反應氣體時，此反 應氣體在並列設置的各標靶之背面側的空間會擴散。然後 ，通過標靶相互間的各間隙朝處理基板供給。在此，依據 配置於標靶之背面側的零件、排氣口的位置等的裝置結構 ，會有下述情況，即在標靶背面側的空間，局部產生氣體 聚集，造成反應氣體通過各標靶相互間的間隙中任一間隙 被偏移導入，而供給至基板之情況。但，在本發明，由於 設有調整手段，故，藉由此調整手段，能夠遮斷來自於任 ❹ 一間隙之反應氣體的流動等，能夠適宜調整通過該間隙所 流動之反應氣體的氣體流量。藉此，能夠確實地防止反應 氣體被偏移導入至欲進行處理之基板，進而能夠防止因在 基板面內之反應性上產生不均造成在基板面內之比阻抗値 ' 等的膜質便得不均等。 在本發明，若採用前述調整手段爲具備有：配置於標 靶之背面側，且具有凸形山角狀之前端部的傳導調整構件 ;及將該傳導調整構件對前述間隙可自由進退地予以驅動 之驅動手段的結構的話，能夠以簡單的結構，因應傳導調 -8 - 200925307 整構件的前述間隙之侵入量，能夠調節通過該間隙所流動 之氣體的傳導。 在此情況，爲了因應裝置結構，適宜調整通過間隙所 流動之反應氣體的傳導，前述傳導調整構件係設置於前述 間隙的全長範圍爲佳。 又，爲了因應裝置結構，能夠進行極細緻之膜質分佈 的調節，能夠採用下述結構，即，前述傳導調整構件以沿 U 著其長方向之預定的長度分割成複數個，在該所分割之部 分分別連結有驅動手段。 且，在本發明，前述濺鍍電源爲針對並列設置之複數 片的標靶中每一對標靶，以預定的頻率交互地改變極性， 來施加電壓之交流電源，將各標靶交互地切換成陽極電極 、陰極電極，使得在陽極電極及陰極電極間產生輝光放電 ，形成電漿環境，來對各標靶進行濺鍍者，藉此，在各標 靶相互間的空間不需要設置任何陽極、屏蔽等的構成零件 〇 ，因此，能夠儘可能地縮小未釋出有濺鍍粒子之此空間。 爲了提高各標靶利用效率，亦可採用下述構造，即， 在前述並列設置的標祀與氣體管之間，於各標靶之前方設 置形成有隧道狀的磁通之磁鐵組裝體，並且具備將該各磁 鐵組裝體一體且沿著標靶裏面平行地往復移動之其他的驅 動手段。 【實施方式】 參照圖1說明關於本發明之濺鍍裝置。1爲本發明的 -9- 200925307 磁控管方式的濺鏟裝置（以下稱爲「濺鍍裝置」）。濺鍍 裝置1爲線內（inline )式者，具有能經由旋轉泵浦、渦 輪分子泵浦等的真空排氣手段（未圖示）保持成爲預定的 真空度之真空室11。在真空室11的上部，設有基板搬送 手段2。此基板搬送手段2具有習知的構造，具有裝設玻 璃基板等的欲進行處理之基板S的載體21，間歇地驅動 未圖示的驅動手段，能夠對與後述的標靶相對向之位置依 次地搬送基板S。 在真空室11內，設有第1屏蔽31，其係爲了當藉由 濺鍍，對已被搬送到與標靶相對向的位置之基板S形成預 定的薄膜之際，防止濺鏟粒子附著到載體21表面、真空 室1 1側壁等，位於基板搬送手段2與標靶之間的位置， 並形成有供基板S面臨的開口 31a。第1屏蔽31的下端係 延伸至後述的第2屏蔽附近。又，在真空室11的下側， 配置有陰極電極c。 陰極電極C具有以等間隔，與基板S相對向地配匱之 複數片（在本實施形態爲8片）的標靶41a至41h，使得 可對大面積的基板S有效率地進行薄膜形成。各標靶41a 至41h係因應Cu、Al、Ti、Mo或這些的合金、銦及錫的 氧化物（ITO)等欲形成於基板S表面之薄膜的組成，以 習知的方法所製作，形成爲例如略長方體（在上面視角呈 長方形）等同形狀。各標靶41a至41h係經由銦、錫等的 連接材，接合於在濺鍍中用以冷卻標靶41a至41h之補償 板42。 -10- 200925307 各標靶41a至41h係經由絕緣構件安裝於陰極電極C 的框架（未圖示），使得未使用時的濺鍍面411位於與基 板S平行的同一平面上。又，在並列設置的標靶41a至 41h的周圍，配置有第2屏蔽32，在真空室11內，受到 第1及第2屏蔽31、32所包圍之空間構成爲濺鍍室11a。 又，陰極電極C係分別位於標靶41a至41h的後方（ 與濺鍍面411背向之側）而具磁鐵組裝體5。相同構造的 φ 各磁鐵組裝體5具有與各標靶41a至41h平行地設置之支 承板（軛）51。當在正面視角，標靶41a至41h呈長方形 時，支承板51係由較各標靶41 a至41h的横寬小、沿 著標靶41a至41h的長方向朝其兩側延伸地所形成的長方 形平板所構成，用以增大磁鐵的吸附力之磁性材料製。在 支承板51上，在其中央部沿著長方向呈線狀配置之中央 磁鐵52、與以包圍中央磁鐵52的周圍之方式沿著支承板 51的外周配置之週邊磁鐵53是改變濺鍍面41 1側的極性 ❹ 而被設置的。 換算成中央磁鐵52的同磁化時之體積係設置成爲例 如與換算成週邊磁鐵53的同磁化時之體積和（週邊磁鐵 :中心磁鐵：週邊磁鐵=1: 2: 1)相等，於各標靶41a 至41h的濺鍍面411.的前方，分別形成有相互吻合之封閉 環狀的隧道狀磁通。藉此，可在各標靶41&至41h的前方 (濺鍍面411)側捕捉因電離的電子及濺鍍所產生之二次 電子，可提高在各標靶41a至41h前方之電子密度’使得 電漿密度便高，而能提高濺鍍速率。 -11 - 200925307 各磁 所構成的 4 1 h的並 體地進行 各標靶4 各標 41a 與 41 0 成每一對 電源El i 、41b ( 4 電源El三 ，以任意 交流 力供給部 輸出至一 φ 及 41h) 交流電源 於任一個 能同步運 又， 等的稀有 表面之薄 導入至濺 體導入手 鐵組裝體5分別被安裝於連結在由馬達、汽缸等 驅動手段D之驅動板D1，可在沿著標靶41a至 列設置方向之2部位的位置間，平行且等速並一 往復移動。藉此，改變濺鍍速率變高之區域，在 la至41h的全面範圍均等地獲得侵蝕區域。 靶4U至41h係以相鄰的2片構成一對標靶（ b、41c 與 41d ' 41e 與 41f > 41g 與 41h)，在分 標靶設置有交流電源El至E4。又，來自於交流 g E4之輸出電纜K1、K2被連接於一對標靶41a lc及41d、 41e及41f、 41g及41h)，藉由交流 g E4，對各一對標靶41a至41h交互地改變極性 的波形（例如，略正弦波）施加交流電壓。 電源E1至E4，使用具有由可進行電力供給之電 、與以預定的頻率交互地改變極性，將交流電壓 對標靶 41a、 41b(41c 及 41d、 41e 及 41f、 41g 之振盪部所構成的習知構造之相同者。再者，各 E1至E4係可相互自由通訊地被連接著，以來自 交流電源E1之輸出訊號’各交流電源E1至E4 轉。 在真空室11，設有氣體導入手段8 ’其將由Ar 氣體所構成的濺鏟氣體、與因應欲形成在基板S 膜的組成加以適宜選擇之氧、氮氣等的反應氣體 銨室內（參照圖i)。用於灘鑛氣體的供給之氣 段8係具有安裝於真空室11的側壁之氣體管81a -12- 200925307 ，氣體管81a經由質量（能）流量控制器82a分別連通於 濺鍍氣體及反應氣體的氣體源83a° 又，用於反應氣體的供給之氣體導λ手段8具有氣體 管81b，氣體管81b的一端經由質量（能）流量控制器 82b分別連通於濺鍍氣體及反應氣體的氣體源83b。另外 ，其另—端連接於通過標耙41a至41h的並列設置方向之 各標靶之中心所延伸的1條氣體供給管84。氣體供給管 0 84爲具有例如#3〜l〇mm的徑之不銹鋼製，設定成爲較 並列設置的標靶41a至41h的全寬之大約1/3更長’在 該標靶41a至41h側的面，位於例如各標靶41a至41h相 互間的間隙的下方形成有複數個噴射口 84a。 又，當使質量（能）流量控制器82a、82b作動時， 濺銨氣體通過第1及第2各屏蔽13、43間以及第1屏蔽 1 3及基板搬送手段2之間的間隙，被導入至濺鍍室1 1 a。 反應氣體在各標靶41a至41h的背面側（與標靶之濺鍍面 ❹ 411背向之側）的空間擴散，再通過各標靶41a至41h相 互間的各間隙4 1 2朝基板S被供給。 在此，在本實施形態的濺鍍裝置1，在各標靶41a至 41h的背面側的空間，設有使冷媒循環於磁鐵組裝體5及 驅動板D1、補償板之冷媒循環路等的零件，又，連通於真 空排氣手段之排氣口 lib也由真空室η的中心偏移而形 成於k真空室11的底面（黎照圖1)。因此，如前述般， 當使反應氣體在各標靶41a至41h的背面側的空間擴散時 ’會有局部產生氣體聚集’通過各標靶相互間的間隙中任 -13- 200925307 一的間隙，反應氣體被偏移導入至基板之虞。 在本實施形態，設有調節手段9，可分別調整 靶4 1 a至4 1 h相互間的各間隙4 1 2所流動之反應氣 量。調整手段9係由：配置於標靶41a至41h的背 具有位於各間隙412的正下方位置呈凸的山角狀（ 致呈三角形）的前端部之傳導調整構件91、及經由 92連結於傳導調整構件91之馬達、汽缸等的驅動」 0 所構成。傳導調整構件91爲例如氟樹脂製，使驅 93作動，使得傳導調整構件9 1對各間隙4 1 2可自 (參照圖2及圖3)。 如圖3所示，當藉由驅動手段93使傳導調整1 下降，其前端位於較相互隣接之補償板42的下面 的位置（下降位置）時，氣體的流動不會被阻礙， 量成爲最大。又，當控制驅動手段93的作動使傳 構件91上升時，因應傳導調整構件91的前端部 Q 412的侵入量，適宜調整通過該間隙所流動之氣體 。另一方面，當藉由驅動手段93使傳導調整構件〖 ，該傳導調整構件91的前端部的斜面分別抵接於 接之補償板42 (上昇位置）時，氣體的流動被遮斷 流量成爲零。再者，傳導調整構件9 1係設置於間 的全長範圍，並且以均等的長度分割成三等分，使 進行極細緻之反應氣體流量的調節，在該所分割之 別連結有驅動手段93。 藉此，利用適宜調整對各間隙4 1 2可自由進退 通過標 體的流 面側， 斷面大 操作軸 ?段93 動手段 由進退 冓件91 更下方 氣體流 導調整 之間隙 的傳導 >1上升 相互隣 ，氣體 隙412 得能夠 部分分 之傳導 -14- 200925307 調整構件91的各部分之位置，調節通過各間丨 板S所流動之反應氣體流量，因而能夠防止反 供給至基板S。因此’在基板S的標靶41a至 間，反應氣體大致均等地存在，此反應氣體朝 標靶41a至41h飛散，與受到電漿所活性化之 生反應，附著、堆積至基板表面。其結果，能 基板面S內之反應性上產生不均，造成在基板 φ 阻抗値等的膜質不得不均等的問題產生。 再者，在本實施形態，作爲傳導調整構件 凸之山角狀的前端部、將各傳導調整構件91 分者爲例進行了說明，但，若爲可因應裝置結 過各間隙4 1 2朝基板S所流動之反應氣體流量 形態、分割數量不限於此。又，針對由傳導靜 所構成之調整手段9進行了說明，但不限於此 設在相互隣接之補償板42間的方式，安裝預 〇 脂薄膜或板狀的構件，遮斷經由各間隙4 1 2所 氣體的流動。此時，亦可在該薄膜、板狀構件 以調節氣體流量來構成調整手段。 又，在本實施形態，以設有通過標靶41a 心延伸的1條氣體供給管84者爲例進行了說 置的結構上（具有磁鐵組裝體之驅動手段等， 法如前述般配置氣體供給管84之情況。在這 ’亦可朝與標靶41a至41h的並列設置方向正 移配置。另一方面，亦可在與標靶41a至41h 髮412朝基 應氣體偏向 4 1 h側的空 基板S，由 濺鍍粒子產 夠防止：在 S面內，比 91，以具有 分割成三等 構來調節通 者的話，其 I整構件9 1 ，亦可爲架 定厚度的樹 流動之反應 設置開口用 至41h的中 明，但在裝 )，會有無 樣的情況時 交之方向偏 的並列設置 -15- 200925307 方向正交的方向，隔著預定的間隔配置複數條的氣體供給 管84，來調節通過並列設置的各標靶41a至41h相互間的 各間隙4 1 2朝基板S所供給之反應氣體的量。 且，在本實施形態，說明了關於並列設置複數片的標 靶41a至41h，對各標靶41a至41h，經由交流電源E1至 E4投入電力者，但，不限於此’亦可對並列設置的各標 靶，藉由直流電源投入電力。在藉由直流電源投入電力之 φ 情況，在各標靶41a、41b相互間配置接地屏蔽100。在這 種情況，亦可構成將接地屏蔽1〇〇的斷面形狀作成爲倒T 字狀，設置有分別密接於其水平部與補償板42裏面且具 預定厚度的樹脂板1〇〇’用以遮斷通過接地屏蔽100與標 靶41a或42b之間所流動之反應氣體的流動之調整手段。 此時，藉由在樹脂板1〇〇之與補償板42之間的密接面， 隔著預定的間隔形成凹狀的溝1 0 1 a ’能夠調節通過接地屏 蔽100與標靶41a或42b之間朝基板S被供給之反應氣體 φ 的量。又，亦可將前述結構的樹脂板在其長方向分割成爲 複數個，以存在有預定的間隔的方式設置於水平部與補償 板42裏面之間的間隙全長範圍。.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for forming a predetermined film on a surface of a substrate by a reactive sputtering method. [Prior Art] As one of the predetermined Φ methods for forming a surface of a substrate such as glass or germanium wafer, sputtering (hereinafter referred to as "sputtering") method is provided. This causes the ions in the plasma environment to be accelerated and washed toward the target produced by the composition formed on the surface of the substrate, so that the sputtered particles (sub) are scattered, adhered, and deposited on the surface of the substrate to form a predetermined thin film. At the same time, a reaction gas of oxygen, nitrogen or the like is introduced at the same time, and the film is obtained by reverse plating. The method for forming a thin film by using this sputtering method has been used in recent years in a liquid crystal display using a TFT (Thin Film Transistor) (a manufacturing process of a germanium, forming a conductive film on a large-area glass substrate surface, as a gate) An oxide film of Cu or the like having excellent electrical conductivity and a good adhesion to the metal film. Conventionally, as a method of forming a thin film on a large-area substrate, as disclosed in Patent Document 1, it is known. The device is provided with a plurality of targets arranged side by side in the vacuum chamber processing substrate, and a power source is disposed. In the targets arranged in parallel, the polarity is alternately changed to apply voltage to each of the paired target frequencies. Each target is exchanged into an anode electrode and a cathode electrode, so that the film of the film which is treated by the sputtering method of the film of the anode electrode and the cathode is sprayed into the film of the original film by the FPD. , and exchange with each other to pre-intersect between the electrodes -5 - 200925307 to produce a glow discharge to form a plasma environment, the target is sputtered. Here, in the sputtering apparatus using the above-described structure, the film formation by reactive sputtering is not only capable of forming a film over the entire range of the substrate with an uniform film thickness, but also preventing the reaction gas from shifting. When introduced into the sputtering chamber, the reactivity in the surface of the substrate is uneven, resulting in unevenness in film quality such as impedance 在 in the surface of the substrate. Therefore, the method of the following Patent Document 2 is well known in which the sputtering gas and the reaction gas are introduced along the long side of the target in the respective gaps between the targets arranged in parallel. In the gas tube, the gas is ejected from the substrate through the respective gaps between the targets by the gas tube. As described in Patent Document 1, when a plurality of targets are arranged side by side with respect to the substrate, when the film formation is performed, the sputtering particles are not released by the respective gaps between the respective targets. Therefore, in order to obtain a uniform film thickness distribution throughout the substrate, it is desirable to reduce the space in which the sputtered particles are not released as much as possible. However, as in the case of the gas pipe of Patent Document 2, 0 is narrowing the space. There will be boundaries. Further, in such a small space, it is extremely difficult to arrange a gas pipe having a predetermined outer diameter, and the structure of the device becomes complicated, and assembly work becomes difficult. Therefore, by disposing and providing at least one gas supply pipe extending in the direction in which the targets are arranged in parallel, the reaction gas can be ejected from the injection port formed in the gas supply pipe, and the reaction can be performed. The structure in which the gas is temporarily diffused toward the space (back side) of the sputtering surface of each of the targets arranged in parallel, and then supplied to the substrate through the gaps between the targets, is proposed by the applicant. May 2007-120708). [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-290550 [Draft of the Invention] [Problems to be Solved by the Invention] Here, in such a sputtering apparatus, a space on the back side of the target is usually housed. a magnet assembly of a tunnel-shaped magnetic flux formed in front of each target, a driving Q means for reciprocating the magnet assembly in an integrated manner, and a refrigerant supply path for supplying a refrigerant to a compensating plate joined to the target A plurality of parts and an exhaust port that communicates with the vacuum exhaust means for evacuating the sputtering chamber are formed on the wall surface of the vacuum chamber on the back side of the target. Therefore, even if the reaction gas is temporarily diffused from the ejection port formed in the gas supply tube and the reaction gas is temporarily diffused in the space on the back side of the target, the gas is locally accumulated due to the device structure, and the reaction gas passes. Any gap between the targets is introduced into the gap and introduced into the substrate. Therefore, the present invention has been developed in order to solve the above problems, and an object of the present invention is to provide a reaction gas in a substantially uniform range over a whole range of substrates, and to provide a film thickness distribution and a specific film thickness on the substrate. It is made into a sputtering device that is uniform and has a simple structure. [Means for Solving the Problem] In order to solve the above-described problems, the sputtering apparatus according to the first aspect of the invention includes: a target that is arranged in parallel in a plurality of sputtering chambers at predetermined intervals; and power can be supplied to each target a sputtering power supply; a gas introduction means for introducing a sputtering gas 200925307 and a reaction gas into the sputtering chamber, and a gas supply means for introducing the reaction gas into the sputtering chamber; at least one gas supply pipe; The back side of each of the targets arranged in parallel is disposed separately from each target, and a sputtering apparatus for ejecting a reaction port of the reaction gas is formed, and is characterized in that an adjustment means is provided which is adjustable through the aforementioned target The flow rate of the aforementioned reaction gas flowing through the gaps between each other. According to the present invention, when the reaction gas is ejected from the ejection openings formed in at least one of the gas supply tubes provided on the back side of each of the targets, the reaction gas is in the space on the back side of each of the targets arranged in parallel. diffusion. Then, the supply is supplied to the processing substrate through the respective gaps between the targets. Here, depending on the device configuration such as the position of the component disposed on the back side of the target and the position of the exhaust port, there is a case where gas is locally accumulated in the space on the back side of the target, and the reaction gas passes through the respective targets. Any of the gaps between the targets is shifted and introduced to the substrate. However, in the present invention, since the adjustment means is provided, the flow of the reaction gas from the gap or the like can be interrupted by the adjustment means, and the gas flow rate of the reaction gas flowing through the gap can be appropriately adjusted. . Thereby, it is possible to surely prevent the reaction gas from being deflected and introduced into the substrate to be processed, and it is possible to prevent the film quality such as the specific impedance 値' in the substrate surface due to the unevenness in the reactivity in the substrate surface. Not equal. In the present invention, the adjustment means is provided with a conduction adjustment member disposed on the back side of the target and having a convex mountain-shaped front end portion, and the conduction adjustment member is capable of being freely advanced and retractable to the gap. In the configuration of the driving means, it is possible to adjust the conduction of the gas flowing through the gap in accordance with the intrusion amount of the entire gap of the entire member of the conduction adjustment -8 - 200925307. In this case, in order to adjust the conduction of the reaction gas flowing through the gap in accordance with the structure of the apparatus, it is preferable that the conduction adjusting member is provided over the entire length of the gap. Further, in order to adjust the fine film quality distribution in accordance with the configuration of the device, it is possible to adopt a configuration in which the conductive adjustment member is divided into a plurality of predetermined lengths along the longitudinal direction of the U, and the plurality of segments are divided into Some of them are connected to drive means. Moreover, in the present invention, the sputtering power supply is an alternating current power source for applying voltage to each pair of targets in a plurality of targets arranged in parallel, and alternating voltages are applied at a predetermined frequency, and the targets are alternately switched. The anode electrode and the cathode electrode are formed such that a glow discharge is generated between the anode electrode and the cathode electrode to form a plasma environment, and each target is sputtered, thereby eliminating the need for any anode in the space between the targets. Since the component parts such as the shield are shielded, it is possible to reduce the space in which the sputtered particles are not released as much as possible. In order to improve the utilization efficiency of each target, a magnet assembly in which a tunnel-shaped magnetic flux is formed between the target and the gas pipe arranged side by side and between the target tubes may be employed, and Other driving means are provided which integrate the respective magnet assemblies and reciprocate in parallel along the inside of the target. [Embodiment] A sputtering apparatus according to the present invention will be described with reference to Fig. 1 . 1 is a shovel device (hereinafter referred to as "sputtering device") of the magnetron type -9-200925307 of the present invention. The sputtering apparatus 1 is an inline type, and has a vacuum chamber 11 capable of maintaining a predetermined degree of vacuum through a vacuum exhausting means (not shown) such as rotary pumping or turbo molecular pumping. A substrate transfer means 2 is provided on the upper portion of the vacuum chamber 11. The substrate transporting device 2 has a conventional structure, and has a carrier 21 on which a substrate S to be processed such as a glass substrate is mounted, and a driving means (not shown) is intermittently driven, and can be sequentially positioned opposite to a target to be described later. The substrate S is transferred to the ground. In the vacuum chamber 11, a first shield 31 is provided for preventing the spatter particles from adhering to the substrate S which has been transported to the substrate S at a position facing the target by sputtering. The surface of the carrier 21, the side wall of the vacuum chamber 11, and the like are located between the substrate transfer means 2 and the target, and an opening 31a for the substrate S is formed. The lower end of the first shield 31 extends to the vicinity of the second shield to be described later. Further, a cathode electrode c is disposed on the lower side of the vacuum chamber 11. The cathode electrode C has the targets 41a to 41h of a plurality of sheets (eight sheets in the present embodiment) which are disposed at equal intervals with respect to the substrate S, so that the film formation can be efficiently performed on the large-area substrate S. Each of the targets 41a to 41h is formed by a conventional method in accordance with a composition of a film to be formed on the surface of the substrate S such as Cu, Al, Ti, Mo or an alloy thereof, an oxide of indium and tin (ITO), or the like. For example, a slightly rectangular parallelepiped (having a rectangular shape in the upper perspective) has an equivalent shape. Each of the targets 41a to 41h is bonded to the compensation plate 42 for cooling the targets 41a to 41h by sputtering through a connecting material such as indium or tin. -10-200925307 Each of the targets 41a to 41h is attached to a frame (not shown) of the cathode electrode C via an insulating member, so that the sputtering surface 411 when not in use is placed on the same plane parallel to the substrate S. Further, a second shield 32 is disposed around the targets 41a to 41h arranged in parallel, and a space surrounded by the first and second shields 31 and 32 in the vacuum chamber 11 is configured as a sputtering chamber 11a. Further, the cathode electrode C is located behind the targets 41a to 41h (on the side opposite to the sputtering surface 411) and has the magnet assembly 5. φ Each of the magnet assemblies 5 having the same structure has a support plate (yoke) 51 provided in parallel with the respective targets 41a to 41h. When the targets 41a to 41h are rectangular in front view, the support plate 51 is formed by being smaller than the lateral width of each of the targets 41a to 41h and extending along the long sides of the targets 41a to 41h toward both sides thereof. The rectangular plate is made of a magnetic material for increasing the adsorption force of the magnet. The center magnet 52 which is linearly arranged in the longitudinal direction at the center portion of the support plate 51 and the peripheral magnet 53 disposed along the outer periphery of the support plate 51 so as to surround the periphery of the center magnet 52 change the sputtering surface. 41 1 side of the polarity ❹ is set. The volume system in the case of the same magnetization of the central magnet 52 is equal to, for example, the volume of the same magnetization converted to the peripheral magnet 53 and (the peripheral magnet: the center magnet: the peripheral magnet = 1: 2: 1). A tunnel-shaped magnetic flux having a closed loop that coincides with each other is formed in front of the sputtering surface 411. of 41a to 41h. Thereby, secondary electrons generated by ionization electrons and sputtering can be captured on the front side (sputter surface 411) side of each of the targets 41 & to 41h, and the electron density in front of each of the targets 41a to 41h can be improved' This makes the plasma density high and increases the sputtering rate. -11 - 200925307 4 1 h of each magnetic field is combined and each target 4 is 41a and 41 0 is formed into each pair of power sources El i and 41b ( 4 power supply El 3 is output to any alternating current force supply unit) A φ and 41h) AC power supply is introduced into the hand-iron assembly 5, which is connected to a driving plate D1 of a driving device D such as a motor or a cylinder, respectively. It is possible to reciprocate in parallel and at a constant speed between the positions of the two portions along the direction in which the target 41a is arranged in the column. Thereby, the region where the sputtering rate becomes high is changed, and the eroded region is equally obtained in the comprehensive range of la to 41h. The targets 4U to 41h constitute a pair of targets (b, 41c and 41d '41e and 41f > 41g and 41h) in two adjacent sheets, and AC power sources El to E4 are provided in the target. Further, the output cables K1, K2 from the AC g E4 are connected to the pair of targets 41a lc and 41d, 41e and 41f, 41g and 41h), and the pair of targets 41a to 41h are exchanged by alternating g E4. An alternating voltage is applied to a waveform that changes polarity (eg, a slightly sinusoidal wave). The power sources E1 to E4 are formed by oscillating portions of the targets 41a and 41b (41c and 41d, 41e and 41f, 41g) by using an electric power supply capable of supplying electric power and alternating polarity at a predetermined frequency. The same is true of the conventional structure. Further, each of the E1 to E4 systems can be connected to each other freely, and the output signals from the AC power source E1 are turned to the respective AC power sources E1 to E4. In the vacuum chamber 11, gas introduction is provided. The means 8' is a reaction gas in an ammonia chamber (see Fig. i) of a shovel gas composed of Ar gas and oxygen, nitrogen, or the like which is appropriately selected in accordance with the composition of the substrate S film. The gas section 8 has gas tubes 81a-12 to 200925307 attached to the side walls of the vacuum chamber 11, and the gas tubes 81a are respectively connected to the gas source 83a of the sputtering gas and the reaction gas via the mass flow controller 82a. The gas guiding means 8 for supplying the reaction gas has a gas pipe 81b, and one end of the gas pipe 81b is connected to the gas source 83b of the sputtering gas and the reaction gas via the mass flow controller 82b. The other end is connected to one gas supply pipe 84 extending through the center of each target in the direction in which the marks 41a to 41h are arranged in parallel. The gas supply pipe 84 is stainless steel having a diameter of, for example, #3 to l〇mm. The surface is set to be longer than about 1/3 of the full width of the targets 41a to 41h arranged side by side. The surfaces on the sides of the targets 41a to 41h are formed below, for example, the gaps between the respective targets 41a to 41h. There are a plurality of injection ports 84a. When the mass (energy) flow rate controllers 82a and 82b are actuated, the ammonium sulfide gas passes through the first and second shields 13 and 43 and the first shield 13 and the substrate transfer means 2 The gap between them is introduced into the sputtering chamber 1 1 a. The reaction gas diffuses in the space on the back side of each of the targets 41a to 41h (on the side opposite to the sputtering surface 411 of the target), and passes through the respective standards. In the sputtering apparatus 1 of the present embodiment, in the space on the back side of each of the targets 41a to 41h, the refrigerant is circulated to the space. Parts such as the magnet assembly 5 and the drive plate D1, the refrigerant circulation path of the compensation plate, and the like, are connected to the vacuum The exhaust port lib of the gas means is also formed on the bottom surface of the k-vacuum chamber 11 by the center of the vacuum chamber η (Lie Photograph 1). Therefore, as described above, when the reaction gas is made in each of the targets 41a to 41h When the space on the back side is diffused, "there is a local gas generation." The gap between the targets and the gap between the targets is -13 to 200925307, and the reaction gas is shifted and introduced into the substrate. In this embodiment, The adjusting means 9 can separately adjust the amount of reaction gas flowing through the respective gaps 4 1 2 between the targets 4 1 a to 4 1 h. The adjustment means 9 is a conduction adjustment member 91 which is disposed at the front end portion of the target 41a to 41h having a mountain-like (triangular) tip which is convex at a position directly below the gap 412, and is connected to the conduction via 92. The drive of the motor, the cylinder, and the like of the adjustment member 91 is constituted by 0. The conduction adjusting member 91 is made of, for example, a fluororesin, and the actuator 93 is actuated so that the conduction adjusting member 9 1 can be self-aligned with each gap 4 1 2 (see Figs. 2 and 3). As shown in Fig. 3, when the conduction adjustment 1 is lowered by the driving means 93 and the leading end thereof is located at a position (downward position) below the compensating plates 42 adjacent to each other, the flow of the gas is not hindered, and the amount becomes maximum. Further, when the operation of the control driving means 93 causes the transmission member 91 to rise, the gas flowing through the gap is appropriately adjusted in accordance with the amount of penetration of the distal end portion Q 412 of the conduction adjusting member 91. On the other hand, when the conduction adjusting member is caused by the driving means 93, the slope of the tip end portion of the conduction adjusting member 91 abuts against the compensating plate 42 (upward position), the flow of the gas is blocked to zero. . Further, the conduction adjusting member 91 is disposed over the entire length of the space, and is divided into three equal parts by an equal length to adjust the flow rate of the extremely fine reaction gas, and the driving means 93 is connected to the divided portion. Thereby, the flow surface side of the gap can be freely advanced and retracted by the appropriate adjustment for each gap 4 1 2, and the large-diameter operation shaft section 93 is used to conduct the gap of the gas flow guide adjustment by the advancing and retracting element 91. 1 rising adjacent to each other, the gas gap 412 can be partially divided to conduct the position of the respective portions of the adjusting member 91, and the flow rate of the reaction gas flowing through the respective sill plates S can be adjusted, thereby preventing the reverse supply to the substrate S. Therefore, the reaction gas is substantially uniformly present between the targets 41a of the substrate S, and the reaction gas is scattered toward the targets 41a to 41h, reacts with the activation of the plasma, and adheres to and deposits on the surface of the substrate. As a result, the reactivity in the substrate surface S is uneven, and the film quality such as the substrate φ impedance 不得不 has to be uniform. Further, in the present embodiment, the front end portion of the mountain portion in which the conduction adjustment member is convex is described as an example in which each of the conduction adjustment members 91 is described as an example. However, if the gap is formed in the corresponding device, the gap is 4 1 2 The flow rate pattern and the number of divisions of the reaction gas flowing through the substrate S are not limited thereto. Further, although the adjustment means 9 composed of the conduction statics has been described, the pre-rubber film or the plate-shaped member is attached so as not to be provided between the mutually adjacent compensation plates 42, and the gaps 4 1 are blocked. The flow of 2 gases. At this time, the film or the plate member may be configured to adjust the gas flow rate to constitute an adjustment means. In the present embodiment, a gas supply pipe 84 extending through the center of the target 41a is provided as an example (a driving means having a magnet assembly, etc., and the gas supply is arranged as described above). In the case of the tube 84, this can also be arranged in the direction of the juxtaposition of the targets 41a to 41h. On the other hand, it is also possible to 412 toward the target 41a to 41h toward the base gas to the side of the 4 1 h side. The substrate S is prevented from being produced by the sputtered particles: in the S plane, the ratio of 91 is adjusted to have a three-equivalent structure, and the I integral member 9 1 may also be a reaction of the tree thickness of the set thickness. The opening is used up to the middle of 41h, but in the case of the case, there is a case where there is no such thing as the direction of the direction of the side-by-side arrangement -15-200925307 direction orthogonal to the direction, a plurality of gas supply pipes 84 are arranged at predetermined intervals The amount of the reaction gas supplied to the substrate S by the gaps 4 1 2 between the respective targets 41a to 41h arranged in parallel is adjusted. Further, in the present embodiment, the targets 41a to 41h in which a plurality of sheets are arranged in parallel are described, and the power is supplied to the targets 41a to 41h via the AC power sources E1 to E4. However, the present invention is not limited thereto and may be arranged in parallel. Each target is powered by a DC power source. In the case where φ is input to the power by the DC power source, the ground shield 100 is disposed between the targets 41a and 41b. In this case, the cross-sectional shape of the ground shield 1〇〇 may be formed into an inverted T shape, and the resin plate 1'' having a predetermined thickness which is in close contact with the horizontal portion and the compensation plate 42 may be provided. The means for adjusting the flow of the reaction gas flowing between the ground shield 100 and the target 41a or 42b is interrupted. At this time, the concave groove 1 0 1 a ' can be formed through the ground shield 100 and the target 41a or 42b by the concave contact surface between the resin plate 1 and the compensation plate 42 at a predetermined interval. The amount of the reaction gas φ supplied to the substrate S. Further, the resin sheet of the above-described configuration may be divided into a plurality of pieces in the longitudinal direction, and may be provided in a predetermined range of the gap between the horizontal portion and the inside of the compensation plate 42 at a predetermined interval. .
[實施例1] 在本實施例1 ’使用圖1所示的濺鍍裝置1，使用作 爲反應氣體之氧氣’藉由反應性濺鍍來在玻璃基板S形成 CuMgO膜。在此情況’作爲標耙’使用組成爲0.7wt%的 CuMg，以習知的方法成形並接合於補償板。又’爲了對 -16- 200925307 2400x2000mm的玻璃基板形成CuMgO膜，並列設置14片 的標靶。且，在與標靶之並列設置方向正交的方向’以存 在有預定的間隔的方式配置2條氣體供給管84 ’僅由該氣 體供給管84的兩端朝標靶噴射反應氣體。 作爲反應性濺鍍之條件，控制質量（能）流量控制器 ，將Ar氣體的氣體流量設定成89〇SCcm、氧氣的流量設 定成240sccm，導入至真空室內。又，將高電力時的投入 U 電力設定成5kW，且設定濺鍍時間（大約30秒）’用以 獲得3 00A之膜厚。 在此，在試料# 1，在位於並列設置的標靶中中央之 標靶相互間的間隙412g ;其兩側的間隙412f、412h及該 間隙兩側的間隙4 1 2e、4 1 2i ;和分別位於基板S的外周緣 部下側之間隙41 2b、4121及位於其兩外側之間隙412a、 412m的全長範圍，傳導調整構件91前端部的斜面上升至 分別抵接到相互鄰接之補償板42，遮斷了氣體的流動之狀 0 態下，形成CuMgO膜。 又，試料#2係在除去並列設置的標靶中之中央的標 靶相互間的間隙4 1 2g、其兩側的間隙4 1 2f、4 1 2h及該間 隙的兩側的間隙4 1 2 e、4 1 2i中之中央部的部位；和分別 位於基板S的外周緣部下側之間隙412a、412m全長範圍 的部位，傳導調整構件91前端部的斜面上升至分別抵接 到相互隣接之補償板42，遮斷了氣體的流動之狀態下，形 成CuMgO膜。 且，在試料#3’使所有的傳導調整構件91下降，在 -17- 200925307 使其前端位於較相互隣接之補償板42的下面更下方的位 置之狀態下，形成CuMgO膜。 圖5至圖7係顯示如前述所製作之試料#1至#3的 CuMgO膜之比阻抗値的分佈之圖表。根據此圖表可得知， 在試料#3，在基板之中央部中的與標靶之長方向兩端部 相對向之部位及沿著標靶之並列設置方向的基板之兩側的 部位，比阻抗値局部變高，該比阻抗値之面內分佈爲土 99.7¾。由此得知，反應氣體之氧氣被偏移供給。 相對於此，在試料#1及試料#2，利用以調整手段9 適宜遮斷通過各間隙4 1 2所流動之反應氣體，比阻抗値的 面內分佈爲±86.1 % (試料#1)及80.6(試料#2)，得知 改善了氧氣被偏移供給一事。 【圖式簡單說明】 圖1是本發明的濺鍍裝置之模式斷面圖。 Φ 圖2是說明本發明的傳導調整手段的配置之平面圖。 圖3是對本發明的傳導調整手段之配置進行放大說明 的斷面圖。 圖4(a)是說明變形例之調整手段的配置之部分斷面 圖，（b )是沿著B-B線之部分斷面圖。 圖5是說明在實施例1所製作的試料#ι的比阻抗値 的膜質分佈之圖表。 圖6是說明在實施例1所製作的試料# 2的比阻抗値 的膜質分佈之圖表。 -18- 200925307 圖7是說明在實施例1所製作的試料# 3的比阻抗値 的膜質分佈之圖表。 【主要元件符號說明】[Example 1] In the present Example 1, a CuMgO film was formed on a glass substrate S by reactive sputtering using the sputtering apparatus 1 shown in Fig. 1 using oxygen as a reaction gas. In this case, a CuMg having a composition of 0.7 wt% was used as a standard, and was formed and bonded to a compensating plate by a conventional method. Further, in order to form a CuMgO film on a glass substrate of -16-200925307 2400 x 2000 mm, 14 targets were arranged in parallel. Further, the two gas supply pipes 84' are disposed so as to have a predetermined interval in the direction orthogonal to the direction in which the targets are arranged in parallel. Only the both ends of the gas supply pipe 84 inject the reaction gas toward the target. As a condition of the reactive sputtering, the mass (energy) flow controller was controlled, and the gas flow rate of the Ar gas was set to 89 〇SCcm, and the flow rate of the oxygen gas was set to 240 sccm, and introduced into the vacuum chamber. Further, the input U power at the time of high power was set to 5 kW, and the sputtering time (about 30 seconds) was set to obtain a film thickness of 300 A. Here, in sample #1, a gap 412g between the targets in the center of the targets disposed in parallel, a gap 412f, 412h on both sides, and a gap 4 1 2e, 4 1 2i on both sides of the gap; The gaps 41 2b and 4121 located on the lower side of the outer peripheral edge portion of the substrate S and the entire lengths of the gaps 412 a and 412 m on the outer sides thereof are raised, and the inclined surface of the front end portion of the conduction adjusting member 91 rises to abut against the mutually adjacent compensation plates 42 . The CuMgO film is formed by blocking the flow of the gas in the state of 0. Further, the sample #2 is a gap 4 1 2g between the targets in the center of the target placed in parallel, a gap 4 1 2f, 4 1 2h on both sides, and a gap 4 1 2 on both sides of the gap. a portion of the central portion of e, 4 1 2i; and a portion of the entire length of the gaps 412a and 412m located on the lower side of the outer peripheral edge portion of the substrate S, the slope of the front end portion of the conduction adjusting member 91 rises to abut against each other. The plate 42 forms a CuMgO film in a state in which the flow of the gas is blocked. Further, in the sample #3', all of the conduction adjusting members 91 are lowered, and a CuMgO film is formed in a state where the leading end is located below the lower surface of the compensating plate 42 adjacent to each other at -17 to 200925307. Fig. 5 to Fig. 7 are graphs showing the distribution of the specific impedance 値 of the CuMgO film of the samples #1 to #3 prepared as described above. According to this graph, in the sample #3, the portion facing the both ends in the longitudinal direction of the target in the central portion of the substrate and the portions on both sides of the substrate along the direction in which the targets are arranged in parallel are compared. The impedance 値 locally becomes higher, and the in-plane distribution of the specific impedance 为 is soil 99.73⁄4. From this, it is known that the oxygen of the reaction gas is supplied offset. On the other hand, in the sample #1 and the sample #2, the reaction gas flowing through the gaps 4 1 2 is appropriately blocked by the adjustment means 9, and the in-plane distribution of the specific impedance 为 is ±86.1% (sample #1) and 80.6 (sample #2), it was found that the oxygen supply was offset. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a sputtering apparatus of the present invention. Φ Fig. 2 is a plan view showing the configuration of the conduction adjusting means of the present invention. Fig. 3 is a cross-sectional view showing an enlarged arrangement of a conduction adjusting means of the present invention. Fig. 4 (a) is a partial sectional view showing the arrangement of the adjusting means of the modification, and Fig. 4 (b) is a partial sectional view taken along line B-B. Fig. 5 is a graph for explaining the membrane distribution of the specific impedance 试 of the sample #1 produced in Example 1. Fig. 6 is a graph for explaining the membrane distribution of the specific impedance 试 of the sample # 2 produced in the first embodiment. -18- 200925307 Fig. 7 is a graph for explaining the membrane distribution of the specific impedance 试 of the sample #3 produced in the first embodiment. [Main component symbol description]
1 :濺鍍裝置 1 la :濺鍍室 31、32 :屏蔽 41a至41h :標靶 8 :氣體導入手段 84 :氣體供給管 9 :調整手段 9 1 :傳導調整構件 93 :驅動手段 EI至E4 :交流電源 S :基板1 : Sputtering apparatus 1 la : Sputtering chambers 31, 32: Shields 41a to 41h: Target 8: Gas introduction means 84: Gas supply pipe 9: Adjustment means 9 1 : Conduction adjustment member 93: Driving means EI to E4: AC power supply S: substrate
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