TW201807764A - Temperature varying device and temperature varying method - Google Patents

Abstract

This temperature varying device has exceptional temperature distribution uniformity and cleanliness stability and is suitable for temperature cycling. The temperature varying device has a housing (10) that demarcates a closed space (10a) that is cut off from outside air and a high-temperature stage (30) and low-temperature stage (40) provided in the closed space (10a). The high-temperature stage (30) carries out temperature adjustment such that a temperature-adjusted surface (31) is kept at a first target temperature, and the low-temperature stage (40) carries out temperature adjustment such that a temperature-adjusted surface (41) is kept at a second target temperature lower than the first target temperature. The temperature varying device is further provided with a movement mechanism (50) for moving an object under test between a processing position at which the object under test is in contact with or opposes the temperature-adjusted surface of the high-temperature stage (30) and a processing position at which the object under test is in contact with or opposes the temperature-adjusted surface (41) of the low-temperature stage (40).

Description

Temperature changing processing device and temperature changing processing method

The present invention relates to a temperature change processing device and a temperature change processing method suitable for use in a temperature cycle test such as a temperature load applied repeatedly to a processing object such as an electronic circuit board or a semiconductor wafer.

The temperature cycle test device for a semiconductor device or an electronic circuit board is composed of, for example, a test tank, a high temperature tank and a heater, a low temperature tank and a cooler, and a valve. In addition, high-temperature gas (air or N ₂ gas) is stored in a high-temperature tank in advance, low-temperature gas is stored in a low-temperature tank, and these are introduced into a test tank through a valve. Although the test object is exposed to high or low temperature by the high temperature or low temperature gas introduced into the test tank, the desired temperature cannot be reached only by the replacement of the gas, so the test is performed by a heater or a cooler. The air in the tank is heated or cooled (for example, refer to Patent Documents 1 and 2).

[Prior technical literature]

[Patent Literature]

[Patent Document 1] Japanese Unexamined Patent Publication No. 5-267418

[Patent Document 2] Japanese Patent No. 2786688

In the general temperature cycle test device described above, the heated or cooled ambient gas is used to expose it to high or low temperatures, and there are problems such as uneven temperature of the ambient gas and adhesion of fine particles.

In addition, the aforementioned general temperature cycle test device is not suitable for a cycle in which the test object is heated to + 150 ° C and then cooled to a low temperature of -40 ° C, and the cycle is repeatedly performed for 5 cycles, and the cycle time is Temperature cycle test with a large temperature change within 180 seconds and short cycle time.

One of the objects of the present invention is to provide a temperature change processing device and a temperature change processing method which are excellent in the uniformity of temperature distribution and stability of cleanliness, and are suitable for a temperature cycle test.

Another object of the present invention is to provide a temperature change processing device and a temperature change processing method suitable for a temperature cycle test with a large temperature change and a short cycle time.

The temperature change processing device of the present invention is a temperature change processing device for imparting a temperature change to a processing object, and includes: a frame body which divides a closed space isolated from outside air; and The first and second temperature adjustment mechanisms are installed in the closed space; the first temperature adjustment mechanism has a first temperature-adjusted surface exposed in the closed space, and the first temperature-adjusted surface is maintained The temperature is adjusted according to the first target temperature. The second temperature adjustment mechanism has a second temperature-adjusted surface exposed in the closed space, and the second temperature-adjusted surface is maintained at a temperature higher than that of the first target. The temperature is adjusted with a second target temperature that is lower, and further includes a moving mechanism for causing the processing object to contact or face the first temperature-adjusted surface of the first temperature control mechanism with the processing object. The first processing position and the second processing position are moved between the object to be processed and the second temperature-regulated surface of the second temperature-regulating mechanism.

It is also possible to adopt the following structure: the frame body has a supply port for supplying a gas made of an inert gas, dry air, or a special gas to the side of the area where the second temperature adjustment mechanism is provided; and The gas port exhausts the gas so that the gas flows from the area side where the second temperature adjustment mechanism is provided toward the area side where the first temperature adjustment mechanism is provided.

It is also possible to adopt a configuration in which the frame is formed so that the closed space can be brought into a reduced pressure or a high vacuum state.

The temperature-change processing method of the present invention is a temperature-change processing method for imparting a temperature change to a processing object, and is characterized in that the first and second temperature-regulating mechanisms provided in a closed space isolated from the outside air are exposed. The first and second tempered surfaces of the closed space are maintained separately The temperature is adjusted at a first target temperature and a second target temperature that is lower than the first target temperature, and the processing target is adjusted at a first temperature of the processing target and the first temperature control mechanism. The first processing position in contact with or facing the surface, and the second processing position in contact with or facing the second temperature-regulated surface of the second temperature-regulating mechanism are moved between the processing object and the processing object. Gives temperature change.

According to the present invention, as long as the object to be processed is moved in a closed space between the first and second temperature-regulated surfaces of the first and second temperature-regulating mechanisms provided in the casing, a temperature change can be applied to the object to be processed. Therefore, the cycle time can be greatly reduced.

As a result of applying heat and absorbing heat to the first and second temperature-regulated surfaces and the object to be processed, heating and cooling are performed, so that processing can be performed in a clean environment.

Since the first and second temperature-regulated surfaces are maintained at the target temperature, uniformity of the temperature distribution with respect to the object to be processed can also be secured.

By causing a gas containing an inert gas or dry air to flow from the second temperature control mechanism side to the first temperature control mechanism side in the closed space, it is possible to cause dew condensation on the second temperature-controlled surface and its surroundings, and It is possible to suppress the heat from moving from the first temperature adjustment mechanism side with a higher temperature to the second temperature adjustment mechanism side with a lower temperature.

Instead, replace inert gas or dry air, or additionally hydrogen Special gas such as gas or formic acid gas may be supplied into the closed space. By supplying a special gas, it is possible to prevent dew condensation or suppress the movement of heat, and to add other functions. In addition to preventing dew condensation or suppressing the movement of heat, for example, by supplying hydrogen, it is possible to prevent oxidation of a treatment target. When the reflow soldering process is performed, by supplying hydrogen or formic acid gas, it is possible to stably perform fluxless reflow soldering with high quality by formic acid reduction or hydrogen reduction.

Instead, by performing a temperature change treatment in a reduced pressure environment or a high vacuum environment, it is possible to prevent dew condensation and suppress heat from moving from the second temperature control mechanism side to the first temperature control mechanism side.

1.1A‧‧‧Temperature cycle test device

10, 10A‧‧‧Frame

11‧‧‧Frame

12A‧‧‧ bottom wall

12B‧‧‧ Upper wall

12C‧‧‧Right wall

12D‧‧‧Left wall

12E‧‧‧Front wall

12F‧‧‧Back wall

15‧‧‧ Supply Department

16‧‧‧Exhaust

20‧‧‧Insulation wall

20A‧‧‧Lower side insulation wall

20B‧‧‧ Upper side insulation wall

GP‧‧‧Access

30‧‧‧High temperature stage (1st temperature control mechanism)

31‧‧‧Tempered surface (first tempered surface)

32‧‧‧ Containment Ditch

35‧‧‧ support member

40‧‧‧Low temperature stage (second temperature control mechanism)

41‧‧‧Tempered surface (second tempered surface)

42‧‧‧ Containment Ditch

45‧‧‧ support member

50‧‧‧ mobile agency

51‧‧‧Driver

52‧‧‧ holding arm

53‧‧‧ Mobile

100‧‧‧Automatic opening and closing path

200‧‧‧Vacuum pump

300‧‧‧Gate Valve

G‧‧‧gas

W‧‧‧ Test body (treatment object)

[FIG. 1] An external perspective view of a temperature cycle test device according to an embodiment of the temperature change processing device of the present invention.

[Fig. 2] A view showing the internal structure of the device of Fig. 1 and a cross-sectional view excluding a front wall of the frame.

[FIG. 3] A view showing the internal structure of the device of FIG. 1 and a cross-sectional view excluding the upper wall of the frame.

[FIG. 4] A view showing the internal structure of the device of FIG. 1 and a cross-sectional view of the right side wall of the frame body.

[Fig. 5] A diagram showing a procedure of a temperature test cycle.

[FIG. 6] A diagram showing a sequence following FIG. 5 and a state in which a test body is positioned at a predetermined processing position (first processing position). Illustration.

[Fig. 7] Fig. 7 is a diagram showing a procedure subsequent to Fig. 6. [Fig.

[Fig. 8] Fig. 8 is a diagram showing a procedure subsequent to Fig. 7. [Fig.

[FIG. 9] A diagram showing a sequence following FIG. 8 and a diagram showing a state where the test body is positioned at a predetermined processing position (second processing position).

[Fig. 10] A graph showing an example of a temperature cycle test.

[FIG. 11] A perspective view showing the structure of a temperature cycle test apparatus according to another embodiment of the temperature change processing apparatus of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In this specification and the drawings, constituent elements having substantially the same functional configuration are assigned the same reference numerals, and redundant descriptions are omitted.

1 to 4 show the structure of a temperature cycle test device (hereinafter referred to as a device) of an embodiment of the temperature change processing device of the present invention.

As shown in FIG. 1, the device 1 is a box-shaped housing 10 that stores the main components of the device as described later, and the test body (processing object) is subjected to a temperature cycle test in the housing 10. The respective implementation is subject to unitization. In order to perform a temperature cycle test of a large number of test bodies, a plurality of devices 1 can be used as shown in FIG. 1. In order to concentrate the installation space, a plurality of devices 1 can be arranged to overlap in the vertical direction. In addition, the device 1 may be overlapped directly in the vertical direction, and it may be stored in a carrier or the like and vertically Directions overlap. An automatic opening / closing passage 100 is provided on the front wall of the housing 10 of each device 1. The test body is put through the automatic opening / closing path 100, and the temperature cycle test is performed inside each device 1, and the test body is carried out from the device 1 where the test is completed. The apparatus 1 from which the test body was carried out was put into a new test body.

Although the detailed description of the automatic opening and closing path 100 of the device 1 is omitted, it is formed such that the posture of the test body can be carried into the housing 10 while being held in a substantially horizontal state by a transport robot or the like, and can be taken from the housing 10 Remove the test body. The automatic opening and closing passage 100 is a mechanism that automatically opens and closes the passage only when the test body is moved into the frame 10 and when it is removed from the frame 10, and is provided to minimize the influence of the environment inside the frame 10 from the external environment. The path opened and closed by the automatic opening / closing path 100 is also the minimum cross-sectional area necessary to carry the test body in and out.

As shown in FIGS. 2 to 4, the frame 10 of the device 1 is tied to a metal frame 11, and a bottom wall 12A, an upper wall 12B, a right wall 12C, a left wall 12D, and a front part made of a heat insulating material are embedded. The wall 12E and the back wall 12F define a closed space 10a that blocks outside air. In addition, the frame 10 is made of a heat-insulating material, and its inside is also isolated from the outside by thermal energy. Although the frame 10 may be formed to be airtight, as described later, by supplying an inert gas such as nitrogen or dry air to the frame 10 to prevent intrusion of outside air, it is not necessary to be completely airtight.

The frame 11 can be made of other materials besides metal. In addition, the frame can be selected from a frame and a heat insulation wall. The frame body having various frame structures may be selected so long as it is for the purpose of stabilizing the environment for temperature treatment of an object to be processed, and is not limited to the form or size disclosed in this specification.

The bottom wall 12A of the frame 10 is shown in FIGS. 2 and 3. A high-temperature stage 30 serving as a first temperature control mechanism is provided on one side of the support member 35 and a support member 45 is provided on the other side. A low temperature stage 40 is provided as a second temperature adjustment mechanism.

The high-temperature stage 30 is attached to the high-temperature stage 30 and has a temperature-adjusted surface 31 exposed to the closed space 10a to be temperature-adjusted. The high-temperature stage 30 is, for example, a metal block having a heat capacity such as an aluminum alloy, a built-in electric heating heater, a temperature sensor that detects the temperature distribution of the temperature-regulated surface 31, and control for electric heating The control circuit for the power supply of the heater controls the power supply to the electric heater so that the temperature of the temperature-adjusted surface 31 becomes the target temperature. The temperature-adjusted surface 31 may be formed of a metal block, or may be formed of another metal, a ceramic plate, or the like. In order to obtain the uniformity of the temperature distribution of the temperature-adjusted surface 31, a special coiler is used for the electric heating heater. Thereby, the temperature-adjusted surface 31 of the high-temperature stage 30 is temperature-controlled while being maintained at a target temperature (for example, 150 ° C) in a temperature range from normal temperature to about 200 ° C. The high-temperature stage 30 is not limited to this configuration, and may be a mechanism that can maintain the temperature of the temperature-adjusted surface 31 at a target temperature against external interference. In addition, instead of forming the high-temperature stage 30 using an electric heater, a temperature-adjusting configuration using a Peltier device similar to the low-temperature stage 40 described later may be employed.

The low-temperature stage 40 is attached to the low-temperature stage 40 and has an exposed space. The temperature-adjusted surface 41 to be temperature-adjusted in the room 10a is adjusted to be cooler than the temperature-adjusted surface 31 of the high-temperature stage 30. The low-temperature stage 40 is, for example, a Peltier element unit having a plurality of Peltier elements built in between two ceramic plates, provided on the bottom side of the Peltier element unit, and cooling the Peltier element. The unit has a water-cooled sleeve, a temperature sensor that detects the temperature distribution of the temperature-regulated surface 41, and a control circuit that controls the power supply to the Peltier element. The water-cooled sleeve is supplied with a sub-zero temperature cold water cooler. Thereby, the temperature-adjusted surface 41 of the low-temperature stage 40 is continuously adjusted at a target temperature (for example, minus 40 ° C.) in a temperature range of about −50 to 130 ° C., for example. The low-temperature stage 40 is not limited to this configuration, and may be a mechanism that can maintain the temperature of the temperature-adjusted surface 41 at a target temperature in order to resist external interference. In addition, instead of forming the low-temperature stage 40 using a Peltier element, it is also possible to adopt a configuration in which the temperature is adjusted using an electric heating heater in the same manner as the high-temperature stage 30 described above.

The temperature-adjusted surface 31 is in a state where the test body directly contacts the temperature-adjusted surface 31 or is arranged opposite to each other with space, so that the temperature of the test body becomes or approaches the temperature-adjusted surface 31 Set the temperature to increase the temperature.

Similarly, the temperature-adjusted surface 41 is in a state where the test body directly contacts the temperature-adjusted surface 41 or a state in which the test body is arranged opposite to each other with space, so that the temperature of the test body becomes or approaches the temperature-adjusted surface. The temperature is reduced by setting the temperature of the surface 41.

Therefore, as the form of the test body that changes the temperature on the temperature-adjusted surfaces 31 and 41, for example, it is suitable to have a plate shape with a constant thickness, such as a substrate or a wafer. Or flakes.

As shown in FIG. 2 third, left side wall 12D of the housing 10, i.e. the side wall is provided in the region R2 side of the low stage 40, provided a useful system to supply the nitrogen gas from the inert gas such as N ₂ or dry Supply port 15 for gas G formed by air. The supply port 15 is connected to a gas supply source for supplying a positive-pressure gas G (not shown). By supplying the gas G into the closed space 10a from the supply port 15, the environment of the gas G can be made in the closed space 10a. When the ambient gas in the closed space 10a is air containing water vapor, dew condensation may form on the low-temperature stage 40 and its surroundings, but by making the environment in the closed space 10a into the gas G, dew condensation can be reliably prevented.

The right side wall 12C of the housing 10, that is, the side wall on the side of the region R1 where the high-temperature stage 30 is provided, is provided for exhausting the gas G supplied to the low-temperature stage 40 side in the closed space 10a.气 口 16。 Port 16. An exhaust pipe (not shown) is connected to the exhaust port 16 and is discharged to the outside through the exhaust pipe. The exhausted gas G can be reused and supplied from the supply port 15 into the closed space 10a again.

In this way, while supplying the positive pressure gas G to the low-temperature stage 40 side, while exhausting from the exhaust port 16 provided on the high-temperature stage 30 side, the low-temperature stage is formed as shown in FIG. 2. The gas G flows from the 40 side toward the high-temperature stage 30 side.

The gas G from the low-temperature stage 40 to the high-temperature stage 30 has a function of preventing heat from moving from the relatively high-temperature high-temperature stage 30 to the relatively low-temperature low-temperature stage 40. Therefore, the low-temperature stage 40 side and the high-temperature stage 30 side can be separated in thermal energy.

In this way, by flowing the gas G made of an inert gas or dry air from the low-temperature stage 40 side to the high-temperature stage 30 side in the closed space 10a, it is possible to prevent the temperature of the low-temperature stage 40 that is relatively low from being adjusted. The surface 41 and its surroundings are dew-condensed, and the movement of heat from the high-temperature stage 30 side with a relatively high temperature to the low-temperature stage 40 side can be suppressed, and a stable state of thermal energy in the device can be easily obtained.

As can be seen from FIG. 2, between the installation region R2 of the low-temperature stage 40 and the installation region R1 of the high-temperature stage 30, a partition formed by the lower-side heat insulation wall 20A and the upper-side heat insulation wall 20B is provided. Hot wall 20. The heat insulation wall 20 extends from the front wall 12E toward the back wall 12F, and functions to suppress the movement of heat between the installation area R2 of the low-temperature stage 40 and the installation area R1 of the high-temperature stage 30. A passage GP for moving the test body is provided in the lower-side heat-insulating wall 20A and the upper-side heat-insulating wall 20B. Through this passage GP, the gas G on the low-temperature stage 40 side flows toward the high-temperature stage 30 side. That is, between the installation region R2 of the low-temperature stage 40 and the installation region R1 of the high-temperature stage 30, in addition to suppressing the movement of heat by the heat insulation wall 20, the low-temperature stage 40 is moved toward the high-temperature stage 30 side. The gas G makes the movement of heat more difficult. Thereby, the installation area R2 of the low-temperature stage 40 and the installation area R1 of the high-temperature stage 30 can be more reliably separated by thermal energy.

In the present embodiment, the heat-insulating wall 20 is provided to prevent the movement of heat between the installation region R2 of the low-temperature stage 40 and the installation region R1 of the high-temperature stage 30, but the present invention is not limited to this.

For example, it can be installed in the installation area R2 of the low-temperature stage 40 A curtain mechanism that forms a gas flow of the gas G in the vertical direction between the installation regions R1 of the warm stage 30.

As shown in FIGS. 3 and 4, the moving mechanism 50 includes a driving portion 51, a movable portion 53, and two arm portions 52 connected to the movable portion 53 provided on the back wall 12F.

The driving unit 51 includes an actuator such as a motor, and converts the movement of the actuator into the horizontal directions A1, A2 shown in FIG. 3 of the movable unit 53 and the vertical directions B1 shown in FIG. 4. The movement mechanism of B2 is a well-known technology, so detailed description is omitted.

The two arm portions 52 are parallel to each other and extend in the horizontal direction. When the front end portions of the two arm portions 52 are moved from predetermined positions on the high-temperature stage 30 and the low-temperature stage 40 toward the vertical downward direction B2, they are accommodated in the two receiving grooves 32 and 32 formed in the high-temperature stage 30. A receiving groove 42 is formed in the low-temperature stage 40.

The temperature-adjusted surface 31 of the high-temperature stage 30 and the temperature-adjusted surface 41 of the low-temperature stage 40 are arranged at the height (substantially the same height) of the entire platform, and the moving mechanism 50 keeps the holding arm portion 52 at By moving the horizontal directions A1, A2 and the vertical directions B1, B2, the test body is moved between the high-temperature stage 30 and the low-temperature stage 40. The test body can be moved by the linear movement of the horizontal direction A1 and A2 of the holding arm portion 52 (directions along the temperature-adjusted surfaces 31 and 41) and a small distance of the vertical direction B1 and B2, so the test body The time required to move is very short.

In addition, although the holding arm portion 52 is configured to hold the test body from the bottom surface side, the present invention is not limited to this, and it is also possible to use a suction clamp from the upper surface side. The test object is held by suction. A well-known method can be used to hold the test body by holding the arm.

In addition, the arrangement of the two holding arms may be arranged outside the high-temperature stage 30 and the low-temperature stage 40, and may be appropriately selected according to the shape of the holding body such as a test body or a tray holding the test body. .

Next, an example of a temperature cycle test using the aforementioned device 1 will be described with reference to FIGS. 5 to 10.

In this embodiment, after the glass and epoxy resin substrate carrying the electronic circuit is put into the temperature device 1, the temperature is raised to 150 ° C. on the high-temperature stage 30, and thereafter, the temperature is lowered to -40 ° C. on the low-temperature stage 40. . The temperature cycle of raising the substrate to 150 ° C. and lowering it to -40 ° C. was taken as one cycle, and one cycle was executed within 180 seconds and repeated five cycles before being carried out from the device 1. In addition, it was determined whether the substrate after the temperature cycle test was a good product or a defective product.

First, before the test is started, the temperature-adjusted surface 31 of the high-temperature stage 30 is set to about 155 ° C, and the temperature-adjusted surface 41 of the low-temperature stage 40 is adjusted to about -45 ° C. The temperatures of the high-temperature stage 30 and the low-temperature stage 40 are set to be slightly higher or lower than the heating or cooling temperature of the substrate to be tested in consideration of heat radiation and the like.

In addition, while the gas G is continuously supplied to the region R2 side of the casing 10, the gas G is exhausted from the region R1 side, and a flow of gas G from the region R2 toward the region R1 is formed in the casing 10. In addition, the supply flow rate and exhaust flow rate of the gas G are such that the flow of the gas G from the region R2 to the region R1 overcomes the natural convection of the gas G occurring in the housing 10, so the gas G flows from the region R2 to the region R1 Flow does not damage the thermal energy in the frame 10 stability.

As shown in FIG. 5, the substrate W as a test body is moved in a horizontal direction using a transfer robot while being held in a substantially horizontal state, and is carried into the housing 10 through an automatic opening / closing path 100 which is automatically opened. After the substrate W is carried in, the automatic opening / closing path 100 is automatically closed.

The substrate W is transferred to the arm portion 52, and the arm portion 52 is accommodated in the receiving groove 32 of the high-temperature stage 30, whereby the substrate W is a temperature-adjusted surface contacting the high-temperature stage 30 as shown in FIG. 31 status. The position where the substrate W is arranged is the first processing position of the present invention. In addition, as described above, the substrate W may be disposed opposite to each other without contacting the temperature-adjusted surface 31 with space, and may be appropriately changed depending on the state of the inside of the substrate W and the like.

In the first processing position shown in FIG. 6, when the temperature of the substrate W measured by a temperature sensor (not shown) reaches 150 ° C., the substrate W is positioned above the temperature-adjusted surface 31. The arm portion 52 is supported in the vertical upward direction B1, and then, as shown in FIG. 7, it is continuously maintained in a substantially horizontal state and moved to the installation area R2 of the low-temperature stage 40 through the passage GP, as shown in FIG. 8 As shown, it reaches above the temperature-regulated surface 41 of the low-temperature stage 40. From this state, the arm portion 52 is accommodated in the receiving groove 42 of the low-temperature stage 40, whereby the substrate W is brought into contact with the temperature-adjusted surface 41 of the low-temperature stage 40 as shown in FIG. The position where the substrate W is arranged is the second processing position of the present invention. In addition, as described above, the substrate W may be disposed to face each other without contacting the temperature-adjusted surface 41 and leaving space.

When the temperature of the substrate W on the temperature-regulated surface 41 measured by a temperature sensor (not shown) reaches -40 ° C, the substrate W is positioned above the temperature-regulated surface 41 through the arm 52 is propped up in the vertical upward direction B1. This completes one cycle of the temperature cycle test.

In addition, in this embodiment, although the case where the temperature of the temperature-regulated surfaces 31 and 41 is adjusted to the target temperature by using a temperature sensor is exemplified, the electric heater or the Peltier element can be forcibly supplied by timer control. The temperature of the temperature-regulated surfaces 31 and 41 is maintained at a target temperature and the like by electric power. The temperature-regulation methods of the temperature-regulated surfaces 31 and 41 can adopt various known methods.

Thereafter, similarly, the substrate W is repeatedly moved between the high-temperature stage 30 and the low-temperature stage 40, and after a 5-cycle temperature cycle test is performed, it is carried out by a transport robot (not shown) through the automatic opening and closing path 100 To the outside.

The graph (1) shown in FIG. 10 is a monitor of the temperature on the substrate W when the device 1 performs a temperature cycle test of the substrate W. As can be seen from FIG. 10, according to the device 1 of the present embodiment, a temperature difference of about 190 ° C. can be repeatedly applied to the substrate W within a short period of 180 seconds or less.

As described above, according to the present embodiment, as long as the test body W is moved in the closed space 10a between the temperature-adjusted surfaces 31 and 41 of the high-temperature stage 30 and the low-temperature stage 40 provided in the housing 10, the test body W can be moved. Since the test body W is given a temperature change of, for example, 190 ° C, a wide temperature change range can be obtained with a short cycle time.

As a result of applying and absorbing heat to the temperature-adjusted surfaces 31 and 41 of the high-temperature stage 30 and the low-temperature stage 40 and the test body W, heating and cooling are received. Since this is performed, the process can be performed in a cleaner environment than when the ambient gas is heated and cooled.

Since the temperature-adjusted surfaces 31 and 41 are continuously maintained at the target temperature, the uniformity of the temperature distribution to the test body W can also be ensured.

In this embodiment, although the automatic opening / closing path 100 is provided on the high-temperature stage 30 side, it may be provided on the low-temperature stage 40 side. However, from the standpoint of thermal stability, it is preferable to be provided on the high-temperature stage 30 side. Since the high-temperature stage 30 is heated to a higher temperature than normal temperature, it can quickly return to a stable state in thermal energy even if it is subjected to external interference. However, the low-temperature stage 40 is cooled to a temperature lower than normal temperature. On the other hand, if it is subject to external disturbances, it must take a longer time to return to a stable state on thermal energy.

In this embodiment, although the high-temperature stage 30 and the low-temperature stage 40 are provided on the bottom wall 12A of the housing 10, these are provided on the upper wall 12B, and the temperature-adjusted surfaces 31 and 41 face each other. You can do it below. At this time, in a state in which the test body W is held by the moving mechanism, it may be in contact with the temperature-adjusted surfaces 31 and 41 or may be arranged facing each other.

In this embodiment, although the automatic opening / closing path 100 is used for loading and unloading the test body, the present invention is not limited to this. For example, a preparation room for carrying in and out can also be provided, and various changes can be made.

Moreover, in the said embodiment, although the temperature of the high temperature stage 30 was set higher than normal temperature, and the low temperature stage 40 was set to the sub-zero temperature, this invention is not limited to this. For example, as long as there is a temperature difference between the high temperature stage 30 and the low temperature stage 40, the high temperature stage 30 and the low temperature stage Both of 40 may be set to a temperature of 0 ° C. or higher. Conversely, both of the high-temperature stage 30 and the low-temperature stage 40 may be set to a temperature below zero.

In the foregoing embodiment, an electric heater and a Peltier element are used for temperature adjustment. However, the present invention is not limited to this, and any temperature adjustment element can be used as long as it can adjust the temperature. For example, both the high-temperature stage 30 and the low-temperature stage 40 may use electric heaters, or both parties may use Peltier elements.

Fig. 11 is a diagram showing the structure of a temperature cycle test apparatus 1A according to a second embodiment of the temperature change processing apparatus of the present invention.

The frame 10A has a completely sealed structure and is formed to be airtight. A gate valve 300 is provided at a position facing the high-temperature stage 30 on the front side of the housing 10A, and a vacuum pump 200 is provided at a position facing the low-temperature stage 40 side. The vacuum pump 200 can be, for example, a turbo molecular vacuum pump.

In the temperature cycle test apparatus 1A of this embodiment, the test system is carried in and out through the gate valve 300. During the test, the inside of the frame 10A is a reduced-pressure environment or a high-vacuum environment.

If the inside of the housing 10A is in a high vacuum environment, the problem of dew condensation on the low temperature stage 40 and its surroundings is eliminated, and in addition, the high temperature stage 30 and the low temperature stage 40 can be separated thermally. In addition, since the fluid does not move, the inside of the housing 10A is extremely stable in thermal energy.

When the inside of the casing 10A is decompressed to a pressure higher than that in the high vacuum state, if the air in the casing 10A contains water vapor, a problem of condensation may occur. In this case, the frame 10A is filled in advance. The inert gas, such as dry air or nitrogen, may be used to decompress the inside of the casing 10A by the vacuum pump 200 from this state.

When the thermal energy separation between the high-temperature stage 30 and the low-temperature stage 40 is insufficient, as shown in the first embodiment, the installation area of the high-temperature stage 30 and the installation area of the low-temperature stage 40 can also be performed. Insulation walls are set in between.

In each of the foregoing embodiments, the case where the temperature-varying treatment device of the present invention is used in a temperature cycle test is described. However, the applicable object of the present invention is not limited to this. For example, it can also be applied to the manufacturing process etc. which require the manufacturing process which melt | dissolves an object to be processed at high temperature and solidifies rapidly.

For example, it is known that the paste or cream-like solder is coated or printed on the necessary parts of the printed circuit board, and then the surface mount parts are placed on a predetermined position on the substrate by a chip mounter, and finally together with The substrate is heated to a high temperature to melt the solder, and the component and the substrate are soldered, which is called "reflow soldering." The manufacturing steps of melting the solder by the high-temperature stage of the temperature-change processing device of the present invention and then solidifying the solder by the low-temperature stage can also be implemented. At this time, in addition to an inert gas or dry air, a special gas such as hydrogen or formic acid gas may be supplied into the closed space. By supplying a special gas, it is possible to prevent dew condensation or suppress the movement of heat, and to add other functions. For example, in the case of performing a reflow soldering process, by supplying hydrogen or formic acid gas, stable and high-quality reflow soldering can be performed without a flux by formic acid reduction or hydrogen reduction. Furthermore, the inside of the frame is made into a reduced-pressure environment, and in this reduced-pressure environment, Hydrogen or formic acid gas is supplied into the closed space, and reflow soldering treatment is performed using a high-temperature stage and a low-temperature stage, thereby preventing pores from being generated in the solder. In order to supply a flushing gas such as nitrogen, a plurality of gas supply paths may be provided. The maximum temperature of the high-temperature stage may be, for example, about 500 ° C. It is also possible to use mass flow controllers to control the flow of various gases.

In reflow soldering, although the molten solder is cooled by a low-temperature stage, the cooling rate can be optimized by controlling the temperature of the low-temperature stage. With such a configuration, it is possible to prevent defects from occurring in a component having a weak thermal shock. In addition, by controlling the cooling rate, the composition of the solder can be made a preference.

That is, the apparatus and method of the present invention can also be used as a manufacturing apparatus and manufacturing method for products such as electronic circuit substrates, circuit boards, and semiconductor devices.

In the foregoing embodiment, although the case where the temperature-adjusted surfaces of the high-temperature stage and the low-temperature stage are arranged upward is exemplified, the present invention is not limited to this, and the high-temperature stage and the low-temperature stage can also be used. The temperature-controlled surface is arranged downward. At this time, in a state where the object to be processed is held by the holding arm or the like, it may be in contact with or facing the temperature-adjusted surface. Furthermore, the temperature-regulated surfaces of the high-temperature stage and the low-temperature stage may be arranged in opposite directions. In this case, the thermal energy can be more reliably separated between the high-temperature stage and the low-temperature stage. It is also possible to arrange the temperature-regulated surface in the vertical direction, and to arrange the high-temperature stage on the upper side and the low-temperature stage on the lower side. The gas system heated by the high-temperature stage rises, and the gas system cooled by the low-temperature stage falls, so such a configuration can improve the separation on the thermal energy.

Furthermore, it is also possible to position the processing target at a predetermined position, and move the high-temperature stage and the low-temperature stage by a moving mechanism to give a temperature change to the processing target.

In the foregoing embodiment, the case where the substrate or semiconductor is moved at high and low temperatures to apply thermal shock is exemplified. However, the present invention is not limited to this, and a power supply mechanism for energizing the semiconductor or circuit can be built in the housing. A thermal shock test was performed while the current was applied.

In the foregoing embodiment, although the moving mechanism is configured to move in the vertical or horizontal direction, the present invention is not limited to this, and the object to be processed can be positioned by rotating the arm at a predetermined radius position, and can also be positioned. The object to be processed is manually moved from the outside. It is also possible to use a linearly moving moving stage to reciprocate the processing target between the high temperature stage and the low temperature stage.

1‧‧‧Temperature cycle test device

10‧‧‧Frame

10a‧‧‧ closed space

11‧‧‧Frame

12A‧‧‧ bottom wall

12B‧‧‧ Upper wall

12C‧‧‧Right wall

12D‧‧‧Left wall

15‧‧‧ Supply Department

16‧‧‧Exhaust

20‧‧‧Insulation wall

20A‧‧‧Lower side insulation wall

20B‧‧‧ Upper side insulation wall

30‧‧‧High temperature stage (1st temperature control mechanism)

31‧‧‧Tempered surface (first tempered surface)

32‧‧‧ Containment Ditch

35‧‧‧ support member

40‧‧‧Low temperature stage (second temperature control mechanism)

41‧‧‧Tempered surface (second tempered surface)

42‧‧‧ Containment Ditch

45‧‧‧ support member

52‧‧‧ holding arm

100‧‧‧Automatic opening and closing path

G‧‧‧gas

GP‧‧‧Access

Claims (12)

A temperature change processing device for providing a temperature change to a processing object, comprising: a frame body that divides a closed space isolated from the outside air; and first and second temperature adjustment mechanisms installed in the closed space; The first temperature adjustment mechanism includes a first temperature adjustment surface exposed in the closed space, and performs temperature adjustment so that the first temperature adjustment surface is maintained at a first target temperature. The second temperature adjustment mechanism Has a second temperature-adjusted surface exposed in the closed space, and the temperature is adjusted so that the second temperature-adjusted surface is maintained at a second target temperature lower than the first target temperature, and further has : The moving mechanism is a first processing position where the processing object contacts or faces the first temperature-regulated surface of the first temperature-regulating mechanism, and the processing object and the second temperature-adjusting object The second temperature-adjusted surface of the temperature mechanism moves between the second processing position in contact with or relative to the temperature-adjusted surface. The temperature-variation processing device according to claim 1, wherein the casing has a supply port for supplying an area of an inert gas, dry air, or a special gas to an area side provided with the second temperature adjustment mechanism. The exhaust gas is exhausted such that the gas flows from the area side where the second temperature adjustment mechanism is provided toward the area side where the first temperature adjustment mechanism is provided. The temperature change processing device according to claim 1, wherein: The frame is formed so that the closed space can be brought into a reduced pressure or a high vacuum state. The temperature change processing device according to any one of claims 1 to 3, further comprising means for suppressing heat from moving between the first temperature adjustment mechanism and the second temperature adjustment mechanism. The temperature change processing device according to claim 4, wherein the area where the first temperature adjustment mechanism is provided and the area where the second temperature adjustment mechanism is provided are formed so as not to hinder the processing object from moving. There is a thermal insulation wall to suppress the movement of heat between the areas. The temperature-change processing device according to claim 4, further comprising: a curtain mechanism that forms an inert gas between an area where the first temperature adjustment mechanism is provided and an area where the second temperature adjustment mechanism is provided. Or a curtain of gas flow from dry air. The temperature-varying processing device according to any one of claims 1 to 3, wherein the temperature-varying processing device includes an automatic opening / closing path capable of externally moving the processing object into the first processing position and the state while maintaining a posture. One of the second processing positions can carry the processing object from one of the first processing position and the second processing position. The temperature change processing device according to any one of claims 1 to 3, wherein the first temperature-regulated surface of the first temperature-regulating mechanism and the second temperature-regulated surface of the second temperature-regulating mechanism are disposed on The height of integration with each other, The moving mechanism maintains the posture of the processing object and moves in the direction along the first and second temperature-regulated surfaces, thereby positioning the processing object at the first processing position and the second processing position. . The temperature-varying processing device according to any one of claims 1 to 3, wherein the object to be processed includes a plate-like or sheet-like shape. A temperature changing treatment method for imparting a temperature change to a processing object, characterized in that the first and second temperature adjustment mechanisms provided in the closed space isolated from outside air are exposed to the first and second temperature regulating mechanisms in the closed space. The second temperature-adjusted surface is adjusted to maintain a first target temperature and a second target temperature that is lower than the first target temperature, and the processing target is adjusted between the processing target and the first The first processing position where the first temperature-adjusted surface of the temperature control mechanism is in contact with or facing the second processing position, and between the processing object and the second processing position where the second temperature-adjusted surface of the second temperature-controlling mechanism is in contact with or facing the first By moving, a temperature change is applied to the object to be processed. The temperature-varying treatment method according to claim 10, wherein the closed space is made into a gaseous environment made of inert gas, dry air, or a special gas, and is formed to face from a region where the second temperature-regulating mechanism is provided. A gas flow in a region where the first temperature adjustment mechanism is provided. The temperature-varying treatment method according to claim 10, wherein the closed space is made into a reduced-pressure environment or a high-vacuum environment.