TW424272B - Post-CMP wet-HF cleaning station - Google Patents

Post-CMP wet-HF cleaning station Download PDF

Info

Publication number: TW424272B
Authority: TW; Taiwan
Prior art keywords: workpiece; container; fluid; cleaning; item
Prior art date: 1998-04-10

Application number

TW88101929A

Other languages

English (en)

Chinese (zh)

Inventor

Anand Gupta

Chris Karlsrud

Periya Gopalan

Daniel R Trojan

Jeffrey B Cunnane

Original Assignee

Speedfam Ipec Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-04-10

Filing date

1999-02-09

Publication date

2001-03-01

1998-04-10 Priority claimed from US09/058,647 external-priority patent/US6125861A/en

1999-02-09 Application filed by Speedfam Ipec Corp filed Critical Speedfam Ipec Corp

2001-03-01 Application granted granted Critical

2001-03-01 Publication of TW424272B publication Critical patent/TW424272B/zh

Links

238000004140 cleaning Methods 0.000 title claims abstract description 113
239000000126 substance Substances 0.000 claims abstract description 38
238000009499 grossing Methods 0.000 claims abstract description 4
239000012530 fluid Substances 0.000 claims description 102
241000532345 Rallus aquaticus Species 0.000 claims description 34
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
239000003480 eluent Substances 0.000 claims description 30
238000005406 washing Methods 0.000 claims description 27
238000012546 transfer Methods 0.000 claims description 21
238000005498 polishing Methods 0.000 claims description 16
239000007788 liquid Substances 0.000 claims description 14
238000001035 drying Methods 0.000 claims description 13
238000012545 processing Methods 0.000 claims description 10
230000007246 mechanism Effects 0.000 claims description 8
230000033001 locomotion Effects 0.000 claims description 5
238000011068 loading method Methods 0.000 claims description 4
239000000203 mixture Substances 0.000 claims description 3
238000011049 filling Methods 0.000 claims description 2
238000013459 approach Methods 0.000 claims 2
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
230000005540 biological transmission Effects 0.000 claims 1
125000001309 chloro group Chemical class Cl* 0.000 claims 1
229910052731 fluorine Inorganic materials 0.000 claims 1
239000011737 fluorine Substances 0.000 claims 1
230000010354 integration Effects 0.000 claims 1
238000005086 pumping Methods 0.000 claims 1
239000007787 solid Substances 0.000 claims 1
238000005507 spraying Methods 0.000 claims 1
210000002784 stomach Anatomy 0.000 claims 1
238000000034 method Methods 0.000 abstract description 16
239000002002 slurry Substances 0.000 abstract description 9
239000000463 material Substances 0.000 abstract description 8
239000000356 contaminant Substances 0.000 abstract description 5
239000004065 semiconductor Substances 0.000 abstract description 4
239000000243 solution Substances 0.000 description 48
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 42
229910000040 hydrogen fluoride Inorganic materials 0.000 description 40
235000012431 wafers Nutrition 0.000 description 39
230000003628 erosive effect Effects 0.000 description 27
238000009826 distribution Methods 0.000 description 10
238000011010 flushing procedure Methods 0.000 description 10
238000004519 manufacturing process Methods 0.000 description 7
239000002245 particle Substances 0.000 description 6
230000008569 process Effects 0.000 description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
239000008367 deionised water Substances 0.000 description 4
229910021641 deionized water Inorganic materials 0.000 description 4
230000007547 defect Effects 0.000 description 3
230000009545 invasion Effects 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
239000002253 acid Substances 0.000 description 2
230000009471 action Effects 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
-1 cleaning β βππ Substances 0.000 description 2
238000004891 communication Methods 0.000 description 2
239000000383 hazardous chemical Substances 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
229910021645 metal ion Inorganic materials 0.000 description 2
150000001455 metallic ions Chemical class 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000000377 silicon dioxide Substances 0.000 description 2
XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 2
239000004094 surface-active agent Substances 0.000 description 2
238000004506 ultrasonic cleaning Methods 0.000 description 2
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
241000283973 Oryctolagus cuniculus Species 0.000 description 1
ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
229920004738 ULTEM® Polymers 0.000 description 1
229920004482 WACKER® Polymers 0.000 description 1
208000027418 Wounds and injury Diseases 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
239000003082 abrasive agent Substances 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
230000002378 acidificating effect Effects 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
239000000908 ammonium hydroxide Substances 0.000 description 1
230000008901 benefit Effects 0.000 description 1
230000009172 bursting Effects 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
239000003638 chemical reducing agent Substances 0.000 description 1
239000013626 chemical specie Substances 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
239000013065 commercial product Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000005336 cracking Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000006378 damage Effects 0.000 description 1
230000009849 deactivation Effects 0.000 description 1
230000002950 deficient Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000010790 dilution Methods 0.000 description 1
239000012895 dilution Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
125000001475 halogen functional group Chemical group 0.000 description 1
238000001764 infiltration Methods 0.000 description 1
230000008595 infiltration Effects 0.000 description 1
208000014674 injury Diseases 0.000 description 1
238000002386 leaching Methods 0.000 description 1
230000007257 malfunction Effects 0.000 description 1
WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
238000004377 microelectronic Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
238000007517 polishing process Methods 0.000 description 1
239000002861 polymer material Substances 0.000 description 1
229920001343 polytetrafluoroethylene Polymers 0.000 description 1
239000004810 polytetrafluoroethylene Substances 0.000 description 1
229910052700 potassium Inorganic materials 0.000 description 1
239000011591 potassium Substances 0.000 description 1
229910052704 radon Inorganic materials 0.000 description 1
SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
230000009467 reduction Effects 0.000 description 1
230000011218 segmentation Effects 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
229910052708 sodium Inorganic materials 0.000 description 1
239000011734 sodium Substances 0.000 description 1
239000002689 soil Substances 0.000 description 1
230000003068 static effect Effects 0.000 description 1
230000008961 swelling Effects 0.000 description 1
229910052716 thallium Inorganic materials 0.000 description 1
BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1
238000002604 ultrasonography Methods 0.000 description 1
239000002699 waste material Substances 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1
239000011701 zinc Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Cleaning Or Drying Semiconductors (AREA)
Cleaning By Liquid Or Steam (AREA)

TW88101929A 1998-04-10 1999-02-09 Post-CMP wet-HF cleaning station TW424272B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US09/058,647 US6125861A (en)	1998-02-09	1998-04-10	Post-CMP wet-HF cleaning station

Publications (1)

Publication Number	Publication Date
TW424272B true TW424272B (en)	2001-03-01

Family

ID=22018078

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW88101929A TW424272B (en)	1998-04-10	1999-02-09	Post-CMP wet-HF cleaning station

Country Status (2)

Country	Link
TW (1)	TW424272B (fr)
WO (1)	WO1999053531A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI406327B (zh) *	2008-12-31	2013-08-21	Taiwan Semiconductor Mfg	半導體濕式製程及其系統
DE102013100040A1 (de)	2013-01-03	2014-07-03	E-Lead Electronic Co., Ltd.	Führungsverfahren einer Rückwärtsparkhilfe

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5370741A (en) *	1990-05-15	1994-12-06	Semitool, Inc.	Dynamic semiconductor wafer processing using homogeneous chemical vapors
JPH0521413A (ja) *	1991-07-10	1993-01-29	Matsushita Electric Ind Co Ltd	半導体基板洗浄装置及び半導体基板洗浄方法
US5345639A (en) *	1992-05-28	1994-09-13	Tokyo Electron Limited	Device and method for scrubbing and cleaning substrate
US5442828A (en) *	1992-11-30	1995-08-22	Ontrak Systems, Inc.	Double-sided wafer scrubber with a wet submersing silicon wafer indexer
JP3341033B2 (ja) *	1993-06-22	2002-11-05	忠弘大見	回転薬液洗浄方法及び洗浄装置
US5885138A (en) *	1993-09-21	1999-03-23	Ebara Corporation	Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
JPH08187660A (ja) *	1994-12-28	1996-07-23	Ebara Corp	ポリッシング装置
JP3080834B2 (ja) *	1994-03-30	2000-08-28	株式会社東芝	半導体基板洗浄処理装置
US5609719A (en) *	1994-11-03	1997-03-11	Texas Instruments Incorporated	Method for performing chemical mechanical polish (CMP) of a wafer
US5655954A (en) *	1994-11-29	1997-08-12	Toshiba Kikai Kabushiki Kaisha	Polishing apparatus
AU7264596A (en) *	1995-10-13	1997-04-30	Ontrak Systems, Inc.	Method and apparatus for chemical delivery through the brush
DE19781822T1 (de) *	1996-07-08	1999-06-17	Speedfam Corp	Verfahren und Vorrichtung zum Reinigen, Spülen und Trocknen von Wafern

1999
- 1999-02-08 WO PCT/US1999/002483 patent/WO1999053531A2/fr active Search and Examination
- 1999-02-09 TW TW88101929A patent/TW424272B/zh not_active IP Right Cessation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI406327B (zh) *	2008-12-31	2013-08-21	Taiwan Semiconductor Mfg	半導體濕式製程及其系統
DE102013100040A1 (de)	2013-01-03	2014-07-03	E-Lead Electronic Co., Ltd.	Führungsverfahren einer Rückwärtsparkhilfe

Also Published As

Publication number	Publication date
WO1999053531A2 (fr)	1999-10-21
WO1999053531A3 (fr)	2000-03-09

Publication	Publication Date	Title
US6125861A (en)	2000-10-03	Post-CMP wet-HF cleaning station
JP4108941B2 (ja)	2008-06-25	基板の把持装置、処理装置、及び把持方法
JP3979464B2 (ja)	2007-09-19	無電解めっき前処理装置及び方法
TW514999B (en)	2002-12-21	Wafer cleaning apparatus and wafer cleaning method
JP3701126B2 (ja)	2005-09-28	基板の洗浄方法及び研磨装置
US6806193B2 (en)	2004-10-19	CMP in-situ conditioning with pad and retaining ring clean
JP2008534774A (ja)	2008-08-28	半導体基板上への金属の無電解堆積のための装置
US20070224811A1 (en)	2007-09-27	Substrate processing method and substrate processing apparatus
JP2003502840A (ja)	2003-01-21	半導体ウェハを洗浄するための方法及びシステム
WO2003105201A1 (fr)	2003-12-18	Dispositif de traitement de substrat, procede de traitement de substrat et dispositif de mise au point
KR102114567B1 (ko)	2020-05-22	기판 처리 방법 및 기판 처리 장치
CN1933759B (zh)	2010-12-15	利用相容化学品的基板刷子擦洗和接近清洗干燥程序、接近基板制备程序和实施前述程序的方法、设备和系统
JP4628623B2 (ja)	2011-02-09	ウェハ洗浄システムの処理前調整を実施する方法
TW424272B (en)	2001-03-01	Post-CMP wet-HF cleaning station
JPH11354480A (ja)	1999-12-24	ウエハ洗浄方法及びウエハ洗浄装置
US7878144B2 (en)	2011-02-01	Electroless plating apparatus and electroless plating method
EP1459363B1 (fr)	2010-08-11	Procede d'enlevement des residus de bande et de traitement apres gravure sur les films de corail
CN101853781B (zh)	2015-08-19	利用相容化学品的基板刷子擦洗和接近清洗干燥程序、接近基板制备程序和实施前述程序的方法、设备和系统
US7067015B2 (en)	2006-06-27	Modified clean chemistry and megasonic nozzle for removing backside CMP slurries
US8011116B2 (en)	2011-09-06	Substrate proximity drying using in-situ local heating of substrate
JPH07283184A (ja)	1995-10-27	処理装置
JP3426866B2 (ja)	2003-07-14	半導体装置の製造装置および製造方法
JPH097939A (ja)	1997-01-10	基板の処理方法と装置
KR100840127B1 (ko)	2008-06-20	웨이퍼 백사이드 세정시스템 및 이를 이용한 웨이퍼백사이드 세정방법
JPH08153656A (ja)	1996-06-11	ワークの処理方法および装置

Legal Events

Date	Code	Title	Description
2001-07-13	GD4A	Issue of patent certificate for granted invention patent
2004-02-21	MM4A	Annulment or lapse of patent due to non-payment of fees

TW424272B - Post-CMP wet-HF cleaning station - Google Patents

Info

Links

Classifications

Landscapes

Applications Claiming Priority (1)

Publications (1)

Family

ID=22018078

Family Applications (1)

Country Status (2)

Cited By (2)

Family Cites Families (12)

Cited By (2)

Also Published As

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