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TW430873B - Form of microscopic dot mark using laser beam and marking method thereof - Google Patents

Form of microscopic dot mark using laser beam and marking method thereof

Info

Publication number
TW430873B
TW430873B TW088120085A TW88120085A TW430873B TW 430873 B TW430873 B TW 430873B TW 088120085 A TW088120085 A TW 088120085A TW 88120085 A TW88120085 A TW 88120085A TW 430873 B TW430873 B TW 430873B
Authority
TW
Taiwan
Prior art keywords
dot
mask
mark
microscopic
laser beam
Prior art date
Application number
TW088120085A
Other languages
Chinese (zh)
Inventor
Teeichirou Chiba
Ryuusuke Komura
Original Assignee
Komatsu Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Mfg Co Ltd filed Critical Komatsu Mfg Co Ltd
Application granted granted Critical
Publication of TW430873B publication Critical patent/TW430873B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/24Ablative recording, e.g. by burning marks; Spark recording
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B44DECORATIVE ARTS
    • B44CPRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22Removing surface-material, e.g. by engraving, by etching
    • B44C1/228Removing surface-material, e.g. by engraving, by etching by laser radiation
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F3/00Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F7/00Signs, name or number plates, letters, numerals, or symbols; Panels or boards
    • G09F7/16Letters, numerals, or other symbols adapted for permanent fixing to a support
    • G09F7/165Letters, numerals, or other symbols adapted for permanent fixing to a support obtained by a treatment of the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54406Marks applied to semiconductor devices or parts comprising alphanumeric information
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54493Peripheral marks on wafers, e.g. orientation flats, notches, lot number
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

The object of the present invention is to provide a dot mark which is microscopic but is superior in visibility and has a singular form, and a dot marking method for enabling accurate formation of a microscopic dot. To achieve the object, the laser beams are radiated by a laser oscillator (2), whose energy distribution is homogenized by a beam homogenizer (3). A desired pattern is formed by control of a liquid crystal mask (4), in which the maximum length of each pixel is 50 to 2000 mu m. The mask is irradiated by the laser beam homogenized by beam homogenizer (3). The energy density of a divided laser beam, passed through the mask, is adjusted to 1.0 to 3.7 J/cm<SP>2</SP> and each laser beam that passes through the mask (4) in each one dot is reduced by a lens unit (6) onto a dot having a maximum length of 1 to 15 mu m, thereby forming a dot mark on the surface of an article to be marked. The dot mark obtained consists of a single dot mark in each laser irradiated point. The length of the central part of the above mark which extends along the surface of the rising part swelling upward from the surface of the article is 1 to 15 mu m. The height of the swelling part is 0.01 to 5 mu m and, even through the dot is microscopic, it is superior in visibility, such that the freedom degree in the marking field and marking duration can be increased.
TW088120085A 1998-11-25 1999-11-17 Form of microscopic dot mark using laser beam and marking method thereof TW430873B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33400998 1998-11-25

Publications (1)

Publication Number Publication Date
TW430873B true TW430873B (en) 2001-04-21

Family

ID=18272483

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088120085A TW430873B (en) 1998-11-25 1999-11-17 Form of microscopic dot mark using laser beam and marking method thereof

Country Status (3)

Country Link
DE (1) DE19956107B4 (en)
FR (1) FR2786117A1 (en)
TW (1) TW430873B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111716025A (en) * 2019-03-19 2020-09-29 柯马杜股份有限公司 Method for marking a sapphire watch mirror
TWI832225B (en) * 2017-08-31 2024-02-11 日商日本電氣硝子股份有限公司 Manufacturing method of supporting glass substrate and manufacturing method of laminated substrate
TWI835738B (en) * 2017-08-31 2024-03-21 日商日本電氣硝子股份有限公司 Supports glass substrates, laminated substrates, semiconductor package manufacturing methods, and glass substrates

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001101337A (en) * 1999-07-26 2001-04-13 Komatsu Ltd Dot mark reading device and reading method
DE10025835B4 (en) * 1999-11-22 2008-07-31 Komatsu Ltd. Microdot marking method
JP2001223145A (en) * 2000-02-07 2001-08-17 Komatsu Ltd Semiconductor wafer having peculiar form of dot mark and method of forming the dot mark
DE10117210A1 (en) * 2001-04-06 2002-10-24 Lmb Automation Gmbh Method of identifying coated metal objects such as bathtubs, involves providing objects with identification points in defined matrix, and points can be detected through coating and can be machine-read after coating
US6876377B2 (en) * 2001-11-07 2005-04-05 Fuji Photo Film Co., Ltd. Photosensitive material and laser marking method
DE10329381B4 (en) * 2003-06-30 2006-06-22 Kühne, Marco Method for producing a three-dimensional image on an organic, combustible substrate and substrate with a three-dimensional image and use as a substrate
RU2392100C1 (en) * 2009-03-03 2010-06-20 Общество с ограниченной ответственностью "Лазерный Центр" Method of laser labeling surface of metal or alloy

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984515A (en) * 1982-11-08 1984-05-16 Toshiba Corp Method of marking semiconductor substrates using laser light
DE3324551A1 (en) * 1983-07-07 1985-01-17 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen METHOD FOR LABELING SEMICONDUCTOR SURFACES BY LASER RADIATION
JP2658351B2 (en) * 1989-02-03 1997-09-30 日本電気株式会社 Laser marking device
JPH02299216A (en) * 1989-05-15 1990-12-11 Toshiba Corp semiconductor equipment
US5463200A (en) * 1993-02-11 1995-10-31 Lumonics Inc. Marking of a workpiece by light energy
US5768076A (en) * 1993-11-10 1998-06-16 International Business Machines Corporation Magnetic recording disk having a laser-textured surface
JP3189687B2 (en) * 1996-06-17 2001-07-16 株式会社日立製作所 Method of engraving semiconductor material surface and article engraved by the method
JPH11156563A (en) * 1997-11-25 1999-06-15 Komatsu Ltd Laser Micro Marking Apparatus and Marking Method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI832225B (en) * 2017-08-31 2024-02-11 日商日本電氣硝子股份有限公司 Manufacturing method of supporting glass substrate and manufacturing method of laminated substrate
TWI835738B (en) * 2017-08-31 2024-03-21 日商日本電氣硝子股份有限公司 Supports glass substrates, laminated substrates, semiconductor package manufacturing methods, and glass substrates
TWI859074B (en) * 2017-08-31 2024-10-11 日商日本電氣硝子股份有限公司 Supporting glass substrate, laminated substrate, semiconductor package manufacturing method, and glass substrate
CN111716025A (en) * 2019-03-19 2020-09-29 柯马杜股份有限公司 Method for marking a sapphire watch mirror

Also Published As

Publication number Publication date
FR2786117A1 (en) 2000-05-26
DE19956107A1 (en) 2000-05-31
DE19956107B4 (en) 2008-01-24

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent