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TW457654B - Method for die attach - Google Patents

Method for die attach Download PDF

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Publication number
TW457654B
TW457654B TW089105290A TW89105290A TW457654B TW 457654 B TW457654 B TW 457654B TW 089105290 A TW089105290 A TW 089105290A TW 89105290 A TW89105290 A TW 89105290A TW 457654 B TW457654 B TW 457654B
Authority
TW
Taiwan
Prior art keywords
paste
grains
attaching
scope
patent application
Prior art date
Application number
TW089105290A
Other languages
Chinese (zh)
Inventor
Jin-Huang Jang
Original Assignee
Siliconware Precision Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Siliconware Precision Industries Co Ltd filed Critical Siliconware Precision Industries Co Ltd
Priority to TW089105290A priority Critical patent/TW457654B/en
Application granted granted Critical
Publication of TW457654B publication Critical patent/TW457654B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

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  • Die Bonding (AREA)

Abstract

The present invention refers to a method for attaching a die to a specific portion of an object. The object can be a lead frame, a substrate, another die, or any other one that can electrically connect to or support the die. The present invention is characterized by applying a sticky paste in a half-dried state for attaching the die to a heated portion of the object such that the defective overflow of bond in the conventional techniques can be avoided. The effect is remarkable while the present invention is adopted to attach a daughter die onto a mother die.

Description

457654 五、發明說明(1) 發明領域 本案係有關晶粒附著物件指定部位的方法,尤其是一 母晶粒黏貼於-導線架或基板之後,另一子晶粒又黏姑於 該母晶粒之一表面的方法。 發明背景 又習用之晶粒附著(Die Attach)方法,其採用糊狀物 於黏貼作業者,係以散佈(dispense)或沾用(dipping)糊 狀物(pas te )到基板或導線架的指定部位,然後將晶粒放 置遠糊狀物上’以完成黏貼晶粒於基板或導線架的指定部 位。這樣的晶粒附著方法’不易控制夾層片高度(F i丨丨e t height)、膠磨厚度(B〇nd-iine thickness)、與溢膠距 離。這些不良現象對於在母晶粒(已先直接附著於物件的 晶粒)上再附著子晶粒之作業,影響尤其嚴重。如圖i所 示’在子晶粒1 1附著於母晶粒丨0時,這些不良現象易造成 母晶粒上的一些部位1 〇有不良之溢膠(圖1的母晶粒丨〇附著 於基板1 2上)’導致母晶粒丨〇上無法進行銲線丨5之接合 (Wire Bond) °又如圖1所示,夾層片之高度也 難以控制。因此本案提出一新方法,以免除這些不良現 象’使晶粒堆疊(Stacked-Chip)之封裝作業容易進行,並 確保相關產品之品質。 發明說明 本案目的之一在於,提供一新式晶粒附著方法,解決457654 V. Description of the invention (1) Field of the invention This method relates to a method for attaching a specified part of a crystal grain to an object, especially after a mother crystal grain is stuck on a lead frame or a substrate, and another child crystal grain is adhered to the mother crystal grain One surface method. BACKGROUND OF THE INVENTION Die Attach method, which is conventionally used, uses a paste to a sticking operator, and dispenses or dipping paste (paste) to a substrate or lead frame designation. Part, and then place the die on the far paste to finish sticking the die to the designated part of the substrate or lead frame. Such a method for attaching crystal grains' is difficult to control the height of the interlayer sheet (F i 丨 丨 e t height), the thickness of the rubber mill (Bond-iine thickness), and the distance from the glue overflow. These unfavorable phenomena have a particularly serious impact on the operation of attaching the mother crystal grains (the crystal grains that have been directly attached to the object) before attaching the child crystal grains. As shown in Figure i, when the sub-grains 11 are attached to the mother grains 丨 0, these undesirable phenomena easily cause some parts of the mother grains 10 to have a bad overflow glue (the mother grains of FIG. 1 are adhered to On the substrate 12) ', the bonding of wires 5 cannot be performed on the mother die, and as shown in FIG. 1, the height of the interlayer sheet is also difficult to control. Therefore, this case proposes a new method to avoid these undesired phenomena 'to make the packaging operation of stacked-chips easier and to ensure the quality of related products. SUMMARY OF THE INVENTION One of the objectives of this case is to provide a new method of crystal grain attachment to solve the problem.

第4頁 gh7R54_ 五、發明說明(2) 習用方法之溢膠不良現象,使晶粒堆疊之封裝作業變成容 易,而且能夠順利進行,以確保封裝產品之品質穩定度。 本案目的之二在於,獲致最佳之膠層厚度和無氣洞之 膠層(此膠層係指晶粒藉由糊狀物而附著於物件指定部位 後,在該晶粒與該物件指定部位兩者間由該糊狀物形成之 夾層),使晶粒不會發生脫層(delamination)或崩裂 (diecrack)現象。 本案之實施,若以網版印刷(screen printing)方 式,將一種B-stage的糊狀物塗佈於晶圓背面,待該糊狀 物呈半乾燥狀態時,進行晶圓切割成晶粒,然後進行晶粒 附著作業,效果更好。 圖式簡介 圖1用以說明,習知的晶粒附著方法所造成的溢膠不 良,會影響母晶粒上的銲線接合。 圖2用以說明本案之一種實施例中,晶圓背面塗佈糊 狀物之作業。 圖3用以說明本案之晶圓切割。 圖4用以說明本案之晶粒被夾起之作業。 圖5用以說明母本案之晶粒附著於物件指定部位之作 業。 圖6用以說明子本案之晶粒附著於母晶粒之作業。 圖7所示為採用本案晶粒附著方法所製成的產品之外 觀。Page 4 gh7R54_ V. Description of the invention (2) The bad glue overflow phenomenon of the conventional method makes the packaging operation of die stacking easy and can be smoothly carried out to ensure the quality stability of the packaged products. The second purpose of this case is to obtain the best glue layer thickness and no air hole glue layer (this glue layer means that after the crystal grains are attached to the specified part of the object through the paste, the crystal grains and the specified part of the object The interlayer formed by the paste between the two), so that the crystal grains do not delamination or diecrack. In the implementation of this case, if a B-stage paste is coated on the back of the wafer by screen printing, and the wafer is cut into dies when the paste is in a semi-dry state, Then carry out the grain attached book business, the effect is better. Brief Introduction to the Drawings Figure 1 is used to illustrate that the poor glue overflow caused by the conventional die attach method will affect the bonding of the wire on the mother die. Fig. 2 is a diagram for explaining a paste coating operation on the back surface of a wafer in one embodiment of the present case. Figure 3 is used to illustrate the wafer dicing in this case. Fig. 4 is used to explain the operation of pinching the grains in this case. Figure 5 is used to explain the operation of attaching the crystal grains of the parent case to the designated part of the object. Figure 6 is used to explain the operation of attaching the crystal grains of the sub-case to the mother crystal grains. Fig. 7 shows the appearance of a product made by the method for attaching grains in this case.

第5頁 457654 五、發明說明(3) 圖 號說明 10 母晶粒(Μ 〇 t h e r - D i e ) 11 子晶粒(Daughter-Die) 12 基板 13 母晶粒上 有不良溢膠之部位 14 糊狀物所形成的夾層片(F i 1 1 e t) 15 銲線 21 晶圓 22 糊狀物 23 網版印刷片 29 晶粒 30 晶圓座 31 母晶粒 40 基板的指 定部位 41 子晶粒 50 熱板(h 〇 t plate) 55 銲線 60 基板 詳細說明 圖2所不的晶圓2 1的背面’以網版印刷片2 3 ,塗佈一 種有黏性糊狀物2 2在其上,較容易控制膠層之厚度 (Bond-line thickness)。若採用一種 B-stage 的糊狀物塗Page 5 457654 V. Description of the invention (3) Drawing number description 10 Mother die (M other-Die) 11 Child die (Daughter-Die) 12 Substrate 13 There are bad overflow spots on the mother die 14 Paste Sandwich sheet (F i 1 1 et) 15 bonding wire 21 wafer 22 paste 23 screen printing sheet 29 die 30 wafer holder 31 mother die 40 designated part of the substrate 41 child die 50 Hot plate (hot plate) 55 Welding wire 60 Substrate Detailed description The back side of wafer 2 1 shown in FIG. 2 is a screen printing sheet 2 3 coated with a viscous paste 2 2 on it. It is easier to control the bond-line thickness. If using a B-stage paste

第6頁 ^57 6 54Page 6 ^ 57 6 54

佈於晶圓2 1的背面,並且先讓晶圓2丨背面的糊狀物22呈半 乾燥狀態’再進行切割晶圓21成為晶粒的作業,更是容易 控制夾層片南度(Fillet height)與溢膠距離。 圖3所不的晶圓座30,用以安置晶圓2丨,俾便於將晶 圓2 1切割成複數個晶粒2 9。 圖4所示的一晶粒29與塗佈在其一表面的糊狀物22, 一起由晶圓座3 0中被夾起’然後被放置於圖5的一基板之 指定部位40上,此時其被稱為母晶粒31。圖5的基板指定 部位4 0 ’在放置母晶粒3 1之前,先以熱板& 〇加溫。圖6所 示的另一晶粒4 1 (子晶粒),也是依照圖4所示者,由晶圓 座3 0中夾起’然後放置於圖5所示的母晶粒3 1上^圖6的子 晶粒41放置於母晶粒31之上後’待糊狀物22完全乾燥後, 再進行銲線接合(Wire Bond),完成之產品如圖7所示。由 於本案這種新的晶粒附著方法’容易控制溢膠距離,使母 晶粒3 1不會在要做銲線接合的部位有不良溢膠,故母晶粒 3 1的銲線接合作業,得以順利進行,於是晶粒堆疊之封裝 作業谷易貫ie,並且可確保產品品質。又由於本案這種晶 粒附著方法’谷易控制炎層片南度height)與膠 層厚度(Bond-line thickness),更使封裝產品之品質大 為提升。 上述的糊狀物2 2,可使用非導電性材料,或對之加入 導電材料使變成具有導電性。而讓其呈半乾燥狀態(塗佈 於晶圓2 1的背面之後)時再進行晶圓2 1切割成複數個晶粒 2 9的作業方式,能獲致最佳之膠層厚度和無氣洞之膠層結It is placed on the back of wafer 21, and the paste 22 on the back of wafer 2 is in a semi-dried state before cutting wafer 21 into grains. It is easier to control the south of the sandwich sheet (Fillet height ) Distance from overflow. The wafer holder 30 shown in FIG. 3 is used for arranging the wafer 2 丨, which is convenient for cutting the wafer 2 1 into a plurality of wafers 29. A die 29 shown in FIG. 4 is clamped from the wafer holder 30 together with the paste 22 coated on one surface thereof, and then placed on a designated portion 40 of a substrate in FIG. 5. It is referred to as a mother crystal grain 31 at this time. Before placing the mother die 31, the designated portion 40 'of the substrate in FIG. 5 is heated with a hot plate & The other die 4 1 (sub-die) shown in FIG. 6 is also sandwiched by the wafer holder 30 according to the method shown in FIG. 4, and then placed on the mother die 3 1 shown in FIG. 5 ^ After the child crystal grains 41 of FIG. 6 are placed on the mother crystal grains 31 ′, after the paste 22 is completely dried, wire bonding is performed, and the completed product is shown in FIG. 7. Because this new method of attaching the crystal grains in this case 'easily controls the glue overflow distance, so that the mother crystal grains 31 will not have a bad glue spill at the portion where the wire bonding is to be performed. It can be carried out smoothly, so the packaging operation of die stacking is easy and can ensure product quality. In addition, because of this method of grain attachment, Gu Yi controls the thickness of the lamella and the bond-line thickness, which greatly improves the quality of the packaged product. The above-mentioned paste 22 can be made of a non-conductive material, or a conductive material can be added to the paste to make it conductive. And when it is in a semi-dry state (after coating on the back surface of the wafer 21), the operation method of cutting the wafer 2 1 into a plurality of grains 29 can obtain the best glue layer thickness and no air holes. Glue lamination

第7頁 457654 五、發明說明(5) 構’當然會使封裝產品之整體品質顯著提升。 若上述的糊狀物2 2與基板的指定部位4 〇之間的濕潤性 (wetting)良好,則更能確保作業順利與進一步提升產品 品質。 上述的晶粒附著方法,不限於晶粒附著基板或晶粒互 相附著之應用’其也適用於晶粒附著導線架、晶粒附著任 何可以承載晶粒或電連接晶粒的物件。 上述的晶粒附著方法中,基板的指定部位4〇之加溫友 差,不受限於圖5所示者,其可以是任何能使基板指 位40溫度上升之方式。 上述的晶 貼上指定 行,使附 粒41附著 上述的晶 到半乾燥 也可以是 綜觀 施例,而 後,讓這 的表面, 者,也可 物件之指 讓該晶粒Page 7 457654 V. Description of the invention (5) The structure will of course significantly improve the overall quality of the packaged product. If the wettability between the above-mentioned paste 22 and the designated portion 40 of the substrate is good, it is possible to further ensure smooth operation and further improve product quality. The above-mentioned method for attaching the crystal grains is not limited to the application of the crystal grains to the substrate or the crystal grains to each other ', and it is also applicable to the crystal grains to be attached to the lead frame, and the crystal grains to be attached to any object that can carry crystal grains or electrically connect crystal grains. In the above-mentioned method for attaching the crystal grains, the temperature difference between the designated portion 40 of the substrate is not limited to that shown in FIG. 5, and it may be any method that can increase the temperature of the substrate index 40. The above-mentioned crystal is pasted in a specified row, so that the adhering particles 41 adhere to the above-mentioned crystals. The semi-drying may also be a comprehensive example, and then, let the surface, or the object's fingers, let the crystals.

BB 粒附著方法中,母晶粒31 部位40(參考圖5)的方式 著品質更佳°這種適度加 母晶粒3 1 (參考圖6 )。 粒附著方法中’其中該晶 狀態之方式,可以係讓其 人為令其變成半乾燥。 本案所提供者,其主要技 可以是:晶粒的一表面沾 糊狀物呈半乾燥狀態,然 貼於加溫過的物件指定部 以是一晶粒定位方法,用 定部位,包含下列步驟: 的一表面沾上一種有黏性 之塗有糊狀物22的面 可以採適度加壓進 璧作業同樣適用於子 圓背面的該種糊狀物達 自動進行空氣式乾燥, 術要領不受限於上述實 上一種有黏性的糊狀物 後將晶粒之有這糊狀物 位。因此,本案所提供 於將至少一晶粒黏於一 的糊狀物;In the method of attaching BB grains, the mother grain 31 portion 40 (refer to FIG. 5) has a better quality. This modest addition of the mother grain 3 1 (refer to FIG. 6). In the method of attaching the grains, the method in which the crystal state is allowed to be artificially made semi-dry. The main technique provided by the present case may be: a surface of the crystal grains is in a semi-dry state with a paste, and then attached to the designated part of the heated object is a method for positioning the crystal grains. The fixed part includes the following steps : A surface coated with a sticky paste-coated 22 can be pressurized with moderate pressure. The same applies to the paste on the back of the sub-circle. It can be automatically air-dried. It is limited to the above-mentioned type of sticky paste and the crystal grains have this paste position. Therefore, the present case provides a paste that sticks at least one grain to one;

457654 五、發明說明(6) — 讓該晶粒表面上的該種糊狀物呈半乾燥狀態; 將該物件之指定部位加溫,並且將該晶粒之塗有該種糊狀 物的表面,貼於該物件之指定部位。 上述本案所提供的晶粒附著方法之技術要領中,該糊 :物=了以被印到該晶粒的一表面,因此,本案所提供 ,又可以是另一晶粒附著方法,用於將至少一晶粒附 ::物件之指定部位,包含下列步驟: 二λ種有黏性的糊狀物,印到該晶粒的一表面; :該晶粒表面上的該種糊狀物呈半乾燥狀態; ;4物件之指定部位加溫,並|將該晶粒之有該種糊狀物 的表面,貼於該物件之指定部位。457654 V. Description of the invention (6) — Let the paste on the surface of the grains be in a semi-dry state; warm the designated part of the object, and coat the surface of the grains with the paste , Attach to the specified part of the object. In the technical essentials of the method for attaching the crystal grains provided in the above case, the paste: is printed on a surface of the crystal grains. Therefore, the method provided in this case may be another method for crystal grains attachment, At least one grain attached :: a designated part of the object, including the following steps: two lambda kinds of sticky paste, printed on one surface of the grain;: the kind of paste on the surface of the grain is half Dry state;; 4 Warm the specified part of the object, and stick the surface of the grain with the paste to the specified part of the object.

Claims (1)

457654 六、申請專利範圍 1. 一種晶粒附著方法,用於將至少一晶粒附著於一物件 之指定部位,包含下列步驟: 將一種有黏性的糊狀物,塗佈在一晶圓的背面; 讓該晶圓背面的該種糊狀物呈半乾燥狀態; 將該晶圓分割成為多個晶粒; 將該物件之指定部位加溫; 將該等晶粒中至少一者之塗有該種糊狀物的一面貼於該物 件之指定部位。 2. 如申請專利範圍第1項所述之晶粒附著方法,更包含 一步驟:將該等晶粒中至少一者之塗有該種糊狀物的一 面,貼於位在該物件指定部位的晶粒之表面。 3. 如申請專利範圍第1項所述之晶粒附著方法,其中該 種有黏性的糊狀物係一種B - s t a g e的膠。 4. 如申請專利範圍第1項所述之晶粒附著方法,其中該 種有黏性的糊狀物,係非導電性與導電性兩者中的任一 者。 5. 如申請專利範圍第1項所述之晶粒附著方法,其中該 種糊狀物與該物件指定部位之間的濕潤性(W e 11 i n g)良 好。 6. 如申請專利範圍第1項所述之晶粒附著方法,其中該 物件之指定部位加溫的方式,係以一熱板(h 〇 t ρ 1 a t e )接 近該物件之指定部位。 7. 如申請專利範圍第1項所述之晶粒附著方法,其中該 物件係基板與導線架兩者中之至少一者。457654 VI. Application Patent Scope 1. A die attach method for attaching at least one die to a specified part of an object, including the following steps: coating a sticky paste on a wafer Back side; let the paste on the back side of the wafer be in a semi-dry state; divide the wafer into a plurality of grains; warm a designated part of the object; coat at least one of the grains with One side of the paste is affixed to a designated part of the object. 2. The method for attaching crystal grains as described in item 1 of the scope of patent application, further comprising a step of pasting at least one of the crystal grains on the side coated with the paste in a specified position on the object. The surface of the grains. 3. The method for attaching grains as described in item 1 of the scope of the patent application, wherein the viscous paste is a B-s t a g e glue. 4. The method for attaching grains as described in item 1 of the scope of patent application, wherein the viscous paste is either non-conductive or conductive. 5. The method for attaching crystal grains according to item 1 of the scope of patent application, wherein the wettability (W e 11 i n g) between the paste and the designated part of the object is good. 6. The method for attaching grains as described in item 1 of the scope of patent application, wherein the way to heat the designated part of the object is to approach the designated part of the object with a hot plate (h 〇 t ρ 1 a t e). 7. The method for attaching crystal grains according to item 1 of the scope of patent application, wherein the object is at least one of a substrate and a lead frame. 第10頁 ^_576_5^____ 六、申請專利範圍 8·如申請專利範圍第1項所述之晶粒附著方法,其中該 物件係另—晶粒。 9,如申請專利範圍第1項所述之晶粒附著方法,其中該 種有黏性的糊狀物’係以網版印刷(s c r e e n p r i n t i n g)的 方式’塗佈在該晶圓的背面。 ^ ·如申請專利範圍第1項所述之晶粒附著方法,其中該 曰曰粒之塗有該種糊狀物的面,貼於該物件之指定部位的方 式,係採用加壓作業。 π.如申請專利範圍第1項所述之晶粒附著方法,其中該 晶圓背面的該種糊狀物達到半乾燥狀態之方式,係讓其自 動進行空氣式乾燥與人為令其變成半乾燥等兩者中的至少 一者。 12. —種晶粒定位方法,用於將至少一晶粒黏於一物件之 指定部位,包含下列步驟: 讓該晶粒的一表面沾上一種有黏性的糊狀物; 讓該晶粒表面上的該種糊狀物呈半乾燥狀態: 將該物件之指定部位加溫,並且將該晶粒之塗有該種糊狀 物的表面,貼於該物件之指定部位。 13·如申請專利範圍第1 2項所述之晶粒定位方法,更包含 一步驟:讓另一晶粒的一表面沾上邊種有黏性的糊狀物; 讓該另一晶粒之表面上的該種糊狀物呈半乾燥狀態;將該 另一晶粒之塗有該種糊狀物的表面貼於位在該物件指定部 位的晶粒之表面。 14.—種晶粒附著方法,用於將至少—晶粒附著於一物件Page 10 ^ _576_5 ^ ____ VI. Scope of patent application 8. The method for attaching grains as described in item 1 of the scope of patent application, wherein the object is another grain. 9. The method for attaching crystal grains according to item 1 of the scope of the patent application, wherein the viscous paste ′ is applied on the back surface of the wafer by screen printing (scr e n p r i n t i n g). ^ The method for attaching grains as described in item 1 of the scope of the patent application, wherein the method of applying the paste to the surface of the grains and applying the paste to a specified part of the object is a pressurizing operation. π. The method for attaching grains as described in item 1 of the scope of the patent application, wherein the way that the paste on the back of the wafer reaches a semi-dry state is to let it automatically perform air drying and artificially make it semi-dry Wait for at least one of the two. 12. A grain positioning method for adhering at least one grain to a designated part of an object, including the following steps: one surface of the grain is coated with a sticky paste; the grain is allowed to The paste on the surface is in a semi-dry state: the designated part of the object is warmed, and the surface of the grain coated with the paste is affixed to the designated part of the object. 13. The method for locating grains as described in item 12 of the scope of the patent application, further comprising a step of allowing a surface of another grain to be covered with a sticky paste; and letting the surface of the other grain The kind of paste on the surface is in a semi-dry state; the surface of the other grain coated with the kind of paste is affixed to the surface of the grain located at a designated part of the object. 14. A method of attaching grains for attaching at least-grains to an object 4 5 7S54_ 六、申請專利範圍 之指定部位,包含下列步驟: 將一種有黏性的糊狀物,印到該晶粒的一表面; 讓該晶粒表面上的該種糊狀物呈半乾燥狀態; 將該物件之指定部位加溫,並且將該晶粒之有該種糊 狀物的表面,貼於該物件之指定部位。4 5 7S54_ 6. The designated part of the patent application scope includes the following steps: printing a sticky paste on one surface of the crystal grains; making the paste on the surface of the crystal grains semi-dry Condition: Warm the designated part of the object, and stick the surface of the grain with the paste to the designated part of the object. 第12頁Page 12
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42349E1 (en) 2002-12-24 2011-05-10 Chipmos Technologies (Bermuda) Wafer treating method for making adhesive dies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42349E1 (en) 2002-12-24 2011-05-10 Chipmos Technologies (Bermuda) Wafer treating method for making adhesive dies

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