TW451109B - Mask having ESD protection function - Google Patents
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- TW451109B TW451109B TW89110164A TW89110164A TW451109B TW 451109 B TW451109 B TW 451109B TW 89110164 A TW89110164 A TW 89110164A TW 89110164 A TW89110164 A TW 89110164A TW 451109 B TW451109 B TW 451109B
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- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000003068 static effect Effects 0.000 claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 9
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 63
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 40
- 239000011651 chromium Substances 0.000 claims description 38
- 229910052804 chromium Inorganic materials 0.000 claims description 33
- 230000005611 electricity Effects 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract 2
- 230000005684 electric field Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000006386 neutralization reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005381 potential energy Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 206010039580 Scar Diseases 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
45彳彳09 五、發明說明（1) 發明之領域 本發明係提供一種具有靜電放電保護功能的光罩’尤 指一種利用放電尖端來將靜電導入空氣中之具有靜電放電 保護功能的光罩。 背景說明 微影製程（photolithography)可以說是整個半導體製 程中，相當::舉足輕重的步驟之一。舉凡是與M0S元件的結 構相關的，如各層薄膜的圖案（pattern)以及換質 (dopant)的區域，都是經由微影製程這個步驟來決定的。 微影製程的基本步驟，是先於半導體晶片（wafer)表面覆 上一層感光材料（photo-sensitive material)，接著利用 一平行光穿過一以玻璃為主體的光罩（mask)後，照射在感 光材料之上》由於光罩上具有一基體線路的佈局（layout) 圖案’所以感光材料便得以進行選擇性（selective)的感 光反應’以將光罩上的圖案轉移（transfer)至半導禮晶片 上。 一般而言，光罩包含有一平坦且透明的玻璃或石英 〇 (diiartz)當作基板，以及一層厚度約1〇〇〇埃的鉻膜覆蓋於 光罩的表面之上，然後利用一蝕刻製程對該鉻膜進行蝕 刻’使該光罩表面形成一包含有可透光區及不透光區的佈 〇 ( 1 二罩圖案’以進行圖案轉移。然而當操作人員拿取 " 或在光罩保存的過程中，皆有可能因摩擦或其他因素45 彳 彳 09 V. Description of the invention (1) Field of the invention The present invention provides a photomask having an electrostatic discharge protection function, and more particularly, a photomask having an electrostatic discharge protection function that uses a discharge tip to introduce static electricity into the air. Background photolithography can be said to be one of the most important steps in the entire semiconductor process. For example, all of the structures related to the MOS device, such as the pattern and dopant area of each layer of film, are determined through the lithography process. The basic step of the lithography process is to cover a semiconductor wafer with a layer of photo-sensitive material, and then use a parallel light to pass through a mask with glass as the main body and irradiate it on "On top of the photosensitive material" Because the photomask has a layout pattern of the base circuit 'so the photosensitive material can perform selective photoreaction' to transfer the pattern on the photomask to the semi-conductor On the wafer. Generally speaking, a photomask includes a flat and transparent glass or quartz (diiartz) as a substrate, and a chromium film with a thickness of about 1000 angstroms is covered on the surface of the photomask, and then an etching process is performed on the photomask. The chrome film is etched to 'form the mask surface to form a cloth including a light-transmitting area and an opaque area' (12 mask patterns) for pattern transfer. However, when the operator takes " or During storage, there may be friction or other factors
第4頁 451109 五、發明說明（2) 產生靜電，進而使光罩帶有一電場（electric field)’造 成空氣中的微粒（particle)被吸附於光罩之上，或是該電 場直接在光罩表面進行一放電中和’形成焦痕。如此一 來，後續在利用光罩進行圖案轉移時’便會造成圖案失 真。 請參閲圖一，圖一為習知之光罩示意圖習知之具有 靜電放電（electrostatic discharge，ESD)保護的光罩 10 係包含有一透明之石英基底（substrate) 12，一圖案區14 設於石英基底12表面之一預定區域，係用來進行圖案轉 移，一内緣鉻膜16設於基底表^面且圍繞於圖案區12周圍， 一由裸露之石英基底所構成之靜電環（ESD annulus) 18 , 設於石英基底12表面且圍繞於内緣鉻膜16周圍，以及一外 緣鉻膜2 0設於石英基底12表面並圍繞於靜電環18周圍。其 中靜電環疋用來做為一絕緣層（jnsulated layer)，以便 絕緣内緣鉻膜1 6以及外緣鉻骐2 0。 當光罩1〇與物體或人員產生摩擦，將使得光罩1〇之外 緣鉻膜20帶有靜電荷（electr〇static charge)。此時，外 緣鉻膜2 0所帶有之靜電荷會對於内緣鉻膜丨6進行感應 (induction)’使内緣鉻膜16帶有電性相反感應電荷 (mducUve charge)。由於内緣鉻膜16與圖案區u原為電 中性，因此當内緣鉻膜16被感應出感應電荷時，圖案區14 同時也會帶有與感應電荷相同電量但電性相反之電荷。Page 4 451109 V. Description of the invention (2) Static electricity is generated, which causes the photomask to have an electric field, causing particles in the air to be adsorbed on the photomask, or the electric field is directly on the photomask The surface undergoes a discharge neutralization 'to form a burn scar. In this way, the pattern distortion will be caused when the pattern transfer is performed by using the photomask. Please refer to FIG. 1. FIG. 1 is a schematic diagram of a conventional photomask. The conventional photomask 10 with electrostatic discharge (ESD) protection includes a transparent quartz substrate 12, and a pattern region 14 is provided on the quartz substrate. A predetermined area on the 12 surface is used for pattern transfer. An inner edge chromium film 16 is provided on the surface of the substrate and surrounds the pattern area 12. An electrostatic ring (ESD annulus) 18 composed of a bare quartz substrate 18 Is provided on the surface of the quartz substrate 12 and surrounds the inner edge chromium film 16; and an outer edge chromium film 20 is provided on the surface of the quartz substrate 12 and surrounds the electrostatic ring 18. The electrostatic ring 疋 is used as a jnsulated layer to insulate the inner chrome 16 and the outer chrome 20. When the photomask 10 is in friction with an object or a person, the outer chromium film 20 of the photomask 10 will have an electrostatic charge. At this time, the electrostatic charge carried by the outer edge chromium film 20 will induce the inner edge chromium film 丨 6 'so that the inner edge chromium film 16 will have an electrical opposite induced charge (mducUve charge). Because the inner edge chromium film 16 and the pattern region u were originally electrically neutral, when the inner edge chromium film 16 is induced with an induced charge, the pattern region 14 will also carry a charge with the same amount of electricity as the induced charge but with an opposite electrical polarity.
$ 5頁 4511〇9 五、發明說明（3) } 如此一來，圖案區便14會形成一電場，因此空氣中的 微粒會被電場所吸引而附著於圖案區14上’或該位於圖案 區14之電荷將直接與空氣中的帶電粒子進行中和放電，造 成焦痕，使得圖案區1 4之細微線路末端產生高熱’進而導 致線路圖案失真或損毁β此外，因為外緣鉻膜2 0所帶之電 荷與内緣鉻膜1 6所帶之感應電荷，係為電性相反之電荷’ 因此當彼此累積呈一定程度時，外緣鉻膜2 0之電荷與内緣 鉻膜16之感應電猗便會產生一中和放電作用，以消除彼此 累積之電荷，ϋ使得外緣鉻膜2 0與内緣鉻膜1 6恢復成電中 性。然而進#中和放電時，電荷會釋放出本身所帶有％電 位能，以達到較穩定之狀態，而釋放岀的電位能會轉換為 熱能，因而圖案區14之細微線路的末端亦可能產生高熱而 造成焦痕’導致線路圖案的損毀。 由於目前半導體晶片的線寬已朝〇 · 1 8仁m甚至0 _ 1 5/z m 的目標設計，因此線路圖案因靜電中和放電效應而導致損 毁的情況會隨著線寬越小而益形嚴重。一旦線路圖案發生 損毀的情形，該光罩甚至整批半導體晶片勢必要報廢，如 此 來’不但影響圖案轉移（pattern transf er)的品質， 嚴重降低產能’而且光罩使用壽命也會減短。 發明之詳細說明 請參閱圖二，圖二為本發明之外觀及靜電放電保護之$ 5 页 4511〇9 V. Description of the invention (3)} In this way, the pattern area 14 will form an electric field, so the particles in the air will be attracted by the electric field and adhere to the pattern area 14 'or the pattern area The charge of 14 will directly neutralize and discharge with the charged particles in the air, causing burn marks, which will cause high heat at the ends of the fine lines in the pattern area 14 to cause distortion or damage to the line pattern. In addition, the outer edge of the chromium film 20 The charged charge and the induced charge carried by the inner edge chromium film 16 are opposite electrical charges'. Therefore, when they accumulate with each other to a certain extent, the electric charge of the outer edge chromium film 20 and the induced electricity of the inner edge chromium film 16 Will produce a neutralizing discharge to eliminate the accumulated charges, and ϋ will make the outer chromium film 20 and the inner chromium film 16 return to electrically neutral. However, during the neutralization discharge, the charge will release its own% potential energy to achieve a more stable state, and the potential energy released by tritium will be converted into thermal energy, so the ends of the fine lines of the pattern area 14 may also be generated Focal marks caused by high heat can cause damage to circuit patterns. As the line width of semiconductor wafers has been designed to reach the goal of 0.18 in.m or even 0 _ 1 5 / zm, the damage of circuit patterns due to the effect of static neutralization discharge will be shaped as the line width becomes smaller. serious. Once the circuit pattern is damaged, the mask or even a whole batch of semiconductor wafers will be scrapped. This will not only affect the quality of the pattern transfer, seriously reduce the production capacity, but also shorten the service life of the mask. Detailed description of the invention Please refer to FIG. 2. FIG. 2 shows the appearance and electrostatic discharge protection of the present invention.
第6頁Page 6
4 51 1 0 S 五、發明說明（4) 示意圖。本發明係提供一種具有靜電放電（ESD)保護功能 的光罩（photo mask) 30，光罩30包含有一由石英 (quartz)或玻璃（glass)所組成之透明基底（transplant substrate) 32，一圖案化（patterned)的遮蔽層，形成於 透明基底3 2之一預定區域上，用來構成一圖案（pattern) 區34，以及一靜電放電保護層36，形成於透明基底3 2之上 且圍繞於圖案區34之外園：《 該圖案化的遮蔽層以及靜電放電保護層3 6接係由鉻 (chrom i um)膜所構成，其製作方法是先利用磁控直流濺鍍 (magnet,i 哪 lly DC sputtering)法，於透明基 底3义秦面， 形成―厚度介於100 0〜120 0埃（angst r οιη)之間的鉻膜，然 後進行一蝕刻製程，去除透明基底32表面不必要的鉻膜， 構成圖案。其中該圖案化的遮蔽層以及靜電放電保護層36 表面另可包含有一厚度為200埃之氧化鉻（以2〇3)層形成於 各絡膜之上’做為降低各絡膜反射的抗反射層’而靜電放 電保護層3 6之周圍係同時利用該蝕刻製程’形成有複數個 以鋸齒狀排列之尖端，且尖端方向為向四周擴張之方向。 發明概述 本發明的主要目的在於提供一種具有靜電玫電（esd) 保護功能的光罩，並利用尖端放電的方式將該光罩上的靜 電導入空氣中’進行中和放電，以避免光罩上之線路圖案4 51 1 0 S V. Description of the invention (4) Schematic diagram. The invention provides a photo mask 30 with an electrostatic discharge (ESD) protection function. The photo mask 30 includes a transparent substrate 32 made of quartz or glass, and a pattern. A patterned shielding layer is formed on a predetermined area of the transparent substrate 32 to form a pattern region 34 and an electrostatic discharge protection layer 36 is formed on the transparent substrate 32 and surrounds it. The outer area of the pattern area 34: "The patterned shielding layer and the electrostatic discharge protection layer 36 are made of a chromium (chrom i um) film. The manufacturing method is to first use magnetron DC sputtering (magnet, i DC sputtering) method, forming a chromium film with a thickness between 100 0 and 120 0 angstroms (angst r οιη) on the transparent surface 3 of the transparent substrate, and then performing an etching process to remove unnecessary chromium on the surface of the transparent substrate 32 Film to form a pattern. The patterned shielding layer and the electrostatic discharge protection layer 36 may further include a chromium oxide (200 Å) layer having a thickness of 200 angstroms formed on each of the films, as an anti-reflection for reducing the reflection of each film. Layer, and the surroundings of the electrostatic discharge protection layer 36 are formed by a plurality of tips arranged in a zigzag pattern at the same time using the etching process, and the direction of the tips is a direction of expanding around. SUMMARY OF THE INVENTION The main object of the present invention is to provide a photomask with electrostatic protection (ESD) protection function, and use the tip discharge method to introduce static electricity on the photomask into the air to perform neutralization discharge to avoid the photomask. Line pattern
第7頁 45110 9 五、發明說明（5) 末端因中和放電而損毁或失真，進而解決上述習知技術的 缺點。 本發明係提供一種具有靜電放電（ESD)保護功能的光 罩（mask)，該光罩包含有一由石英（quartz)或玻璃 (g 1 ass)所組成之透明基底(transparent substrate) * 一 厚度為100 0〜120 0埃（angstrom)且圖案化（patterned)的 鉻（chromium)膜遮蔽層，形成於該透明基底之一預定區域 上，以及一靜電放電保護層，係同樣由一層厚度為10 〇〇〜 120 0埃之鉻膜所組成鉻膜所組成，設於該透明基底表面並 圍繞於該遮蔽層之外圍，且該靜電放電保護層包含有複數 個放電尖端*用來將該靜電放電保護層的靜電’利用尖端 放電方式以導入空氣中，進行中和放電（neutralizing discharge)0 此外，本發明之具有靜電放電保護功能之光罩（mask) 的靜電放電保護區域亦可為一膺厚度為100 0〜120 0埃的鉻 膜，其外圍係由複數個以鋸齒狀排列之尖端所形成，且尖 端方向為向四周擴張之方向’用來將該靜電放電保護層的 靜電利用尖端放電方式以導入空氣中’進行中和放電’使 得該光罩具有靜電放電保護之功能。 由於本發明是在光罩之外圍區域形成複數個向外擴張 之尖端，因此當光罩帶有靜電荷時’靜電荷會集中於各個Page 7 45110 9 V. Description of the invention (5) The end is damaged or distorted due to the neutralization discharge, thereby solving the disadvantages of the above-mentioned conventional techniques. The present invention provides a mask with electrostatic discharge (ESD) protection function. The mask includes a transparent substrate made of quartz or glass (g 1 ass) * a thickness of Angstrom and patterned chromium film shielding layer of 100 0 ~ 120 0 angstroms is formed on a predetermined area of the transparent substrate, and an electrostatic discharge protection layer is also formed by a layer with a thickness of 100. 〇 ~ 120 0 Angstrom Chromium film is formed on the surface of the transparent substrate and surrounds the periphery of the shielding layer, and the electrostatic discharge protection layer includes a plurality of discharge tips * for protecting the electrostatic discharge The layer of static electricity is introduced into the air using a tip discharge method to perform neutralizing discharge. In addition, the electrostatic discharge protection area of the mask with an electrostatic discharge protection function of the present invention can also be a thickness of The chromium film of 100 0 ~ 120 0 Angstroms is formed by a plurality of tips arranged in a zigzag pattern, and the directions of the tips are to expand toward the periphery. Antistatic layer by point discharge air introduced into the manner 'of the discharge and' so that the obtained mask having an electrostatic discharge protection function. Since the present invention forms a plurality of outwardly expanding tips in the peripheral area of the photomask, when the photomask has an electrostatic charge, the electrostatic charges are concentrated in each
451 1 Ο 9 五、發明說明（6) 尖端，並於各尖端 帶有靜電荷。因此 會利用尖端放電原 (neutralizing d i 導入空氣。而且中 電放電保護區域的 圖案造成影響，導 當光罩3 0與物 之圖案區34的遮蔽 電荷。由尖端放電 因而光罩30上的靜 各尖端集中，並於 度累積達到一定程 場感應，造成電性 時’在各尖端處的 中和放電反應，藉 依附於光罩3 0上的 端而與空氣進行中 荷導入空氣中，進 當尖端與空氣 的靜電荷彼此都會 所釋放出的電位能 處形成電場，而不會使得光罩之圖 當各尖端累積至一定量之靜電荷時 理’直接與空氣進行中和放電 scharge)，並將光罩中所帶有之靜 和放電所產生之高溫亦僅會在於外 各尖端末端》並不會對圖案區内的 致線路損毁的情形發生。 .、人.· 體或人員產生摩擦時，將使得光單 層以及靜電放電保護層36的鉻膜帶 原理可得知’尖端處的電場強度較 電荷勢必會往靜電放電保護層3 6周 各尖端處形成電場。當各尖端的電 度時’空氣中的氣體分子便會被該 相反之感應電荷往各尖端處集中。 靜電相便會與空氣中的感應電荷進 以消除彼此所帶有之電荷。也就是 靜電荷會經由靜電放電保護層36上 和放電，將原先存在於光罩上的 而消除光罩3 0上的靜電荷。 進行中和放電時，尖端靜電荷與空 釋放出電位能’以獲得穩定之狀態 ’勢必會使得尖端的溫度上升，由 案區 ，便 電荷 圍靜 線路 3 0上 有靜 強， 圍的 場強 等電 此 行一 說， 的尖 靜電 氣中 。而 於尖451 1 Ο 9 V. Description of the invention (6) Tips, with electrostatic charges on each tip. Therefore, the tip discharger (neutralizing di) is used to introduce air. In addition, the pattern of the protection area of the CLP affects the shielding charge of the photomask 30 and the pattern area 34 of the object. The tip discharges the static electricity on the photomask 30. The tip is concentrated, and the degree of accumulation reaches a certain range of field induction. When the electric property is caused, the neutralization discharge reaction at each tip is introduced into the air by carrying a medium load with the air by relying on the end on the mask 30. The electrostatic charge of the tip and the air will release an electric field at the potential energy released by each other, without making the photo of the photomask. When each tip accumulates a certain amount of electrostatic charge, the charge will be neutralized directly with the air), and The high temperature generated by the static and discharge in the photomask will only be at the ends of the outer tips, and it will not cause damage to the circuits in the pattern area. ., Person. · When friction occurs between the body or the person, the principle of the chrome film band of the light single layer and the electrostatic discharge protection layer 36 can be learned that the electric field strength at the tip is bound to the electrostatic discharge protection layer 3 to 6 weeks each. An electric field is formed at the tip. When the electrical energy of each tip is high, the gas molecules in the air are concentrated by the opposite induced charges toward each tip. The electrostatic phase is then introduced into the air with an induced charge to eliminate each other's charges. That is, the electrostatic charges will be discharged through the electrostatic discharge protection layer 36, and the electrostatic charges on the photomask 30 will be eliminated, which originally existed on the photomask. During neutralization discharge, the electrostatic charge and air at the tip release potential energy 'to obtain a stable state' will inevitably cause the temperature of the tip to rise. From the case area, there will be a static strength on the charge surrounding static line 30, and the surrounding field strength Waiting for the trip, said that the sharp static electricity. And Yujian
第9頁Page 9
45η 0 9 五、發明說明（7) 端的作用是為了讓光罩30上的靜電荷集中於尖端，以進行 靜電放電保護之功能’因此即使各尖端末端因中和放電所 產生的高熱，造成焦痕’也不會影響到圖案區3 4之圖案轉 移的正確性。 請參閱圓三，圖三為本發明之另一實施例的示意圖。 光罩40包含有一由石英或玻璃所組成之透明基底42，一圖 案化的鉻膜遮蔽層，形成於透明基底42之二預定區域上， 用來構成一圖案區44’以及一由鉻膜構成之靜電放電保護 層46，形成於透明基底4 2之上並圍繞於圖案區4 4之外圍。 其中靜電放電保護層46的外緣係包含有複數個放電尖端， 突起地設於靜電放電保護層46的表面之上，並向四周擴 張，用來將靜電放電保護層46的靜電導入空氣中。此外， 靜電放電保護層46不與圖案區44中之遮蔽層相接觸，而且 靜電放電保護層46鄰近於圖案區44中之遮蔽層的侧邊上不 設有該等放電尖端。 如同光罩30—樣，當圖案區44帶有之靜電荷時，會 先感應等量之電荷至靜電放電保護層46，使得靜電放電保 護層46的内緣產生相等電量但電性相反之感應電荷+然 而由於靜電放電保護層46原本為電中性，因此在靜電放電 保護層46的外緣亦會相對生成+Q電荷，而且這些帶電量為 + Q之電荷會往各個尖端處集中。接著，當各的電場強 度累積達到一定程度時，集中於各尖端之+Q的電荷會與空45η 0 9 V. Description of the invention (7) The function of the (7) terminal is to allow the electrostatic charge on the photomask 30 to be concentrated on the tip for electrostatic discharge protection. The marks' will not affect the correctness of the pattern transfer in the pattern area 34. Please refer to circle three, which is a schematic diagram of another embodiment of the present invention. The photomask 40 includes a transparent substrate 42 composed of quartz or glass, a patterned chrome film shielding layer formed on a predetermined area of the transparent substrate 42 to form a pattern area 44 'and a chromium film. An electrostatic discharge protection layer 46 is formed on the transparent substrate 42 and surrounds the periphery of the pattern area 44. The outer edge of the ESD protection layer 46 includes a plurality of discharge tips, which are protrusively provided on the surface of the ESD protection layer 46 and are expanded around to introduce the static electricity of the ESD protection layer 46 into the air. In addition, the ESD protection layer 46 is not in contact with the shielding layer in the pattern area 44, and the side of the ESD protection layer 46 adjacent to the shielding layer in the pattern area 44 is not provided with such discharge tips. As with the photomask 30, when the pattern area 44 has an electrostatic charge, the same amount of charge will be first induced to the electrostatic discharge protection layer 46, so that the inner edge of the electrostatic discharge protection layer 46 will generate an equal amount of electricity but the opposite electrical induction. Charge + However, since the electrostatic discharge protective layer 46 is originally electrically neutral, a + Q charge will also be relatively generated on the outer edge of the electrostatic discharge protective layer 46, and these charges with a charge of + Q will be concentrated at each tip. Then, when the intensity of each electric field reaches a certain level, the charge of + Q concentrated on each tip will be connected to the air.
1 ο 五、發明說明（8) 氣進行中和放電，終將集中於各個尖端之電荷+Q導入空氣 中，進而消除光罩40所帶有之+Q靜電荷，使得光罩40恢復 成為電中性。 相較於習知，本發明是在光罩之外圍區域形成具有複 數個向外擴張之尖端的靜電放電保護層，因此當光罩帶有 靜電荷時_’靜電何會依尖端放電的現象集中於各個尖端， 並於各尖端處形成電場，而不會使得光罩的圖案區帶有靜 電荷，同時空氣中的微粒也會被吸引至尖端所形成之電 場’而不至於附者於圖案區上。此外，當各尖端累積一定 之靜電量時，尖端處會形成一定強度之電場時，然後利用 尖端放電的原理，與空氣進行中和放電（neutralizing discharge)。由於中和放電所產生之高溫僅會在於各尖端 末端，故不會對於圖案區内之線路圖案有任何影響，因此 圖案區也就不會因中和放電而發生線路損毁或造成焦痕， 導致光罩上之線路圖案末端因靜電而發生圖案轉移失真的 情形。 以上所述僅為本發明之較佳實施例，凡依本發明申請 專利範圍所做之均等變化與修飾，均應屬本發明之專利涵 蓋範圍。1 ο 5. Description of the invention (8) The gas is neutralized and discharged, and the charge + Q of each tip is finally introduced into the air, thereby eliminating the + Q electrostatic charge of the photomask 40, so that the photomask 40 is restored to electricity. neutral. Compared with the prior art, the present invention is to form an electrostatic discharge protection layer with a plurality of outwardly expanding tips in the peripheral area of the photomask. Therefore, when the photomask is electrostatically charged, 'how can static electricity be concentrated according to the phenomenon of tip discharge? At each tip, an electric field is formed at each tip, without the electrostatic charge of the pattern area of the photomask. At the same time, particles in the air will be attracted to the electric field formed by the tip 'instead of being attached to the pattern area. on. In addition, when a certain amount of static electricity is accumulated at each tip, a certain strength electric field is formed at the tip, and then the principle of tip discharge is used to neutralize discharge with air. Since the high temperature generated by the neutralization discharge is only at the tip of the tip, it will not have any effect on the circuit pattern in the pattern area, so the pattern area will not be damaged by the neutralization discharge or cause burn marks, resulting in Distortion of the pattern transfer at the end of the line pattern on the photomask due to static electricity. The above description is only a preferred embodiment of the present invention, and any equivalent changes and modifications made in accordance with the scope of the patent application of the present invention shall fall within the scope of patent coverage of the present invention.
第11頁Page 11
^ 451 1 OS 圖式簡單說明 圖示之簡單說明 圖一為習知之光罩示意圖。 圖二為本發明之光罩示意圖。 圖三為本發明之另一實施例的示意圖。 圖示之符號說明 10 光 罩 12 石 英 基 底 14 圖 案 區 16 内 緣 絡 膜 18 靜 電 環 20 外 緣 絡 膜 30 光 罩 32 基 底 34 圖 案 區 36 靜 電 放 電 保 護 層 40 光 罩 42 基 底 44 圖 案 區 46 靜 電 放 電 保 護 層^ 451 1 Simple illustration of OS diagrams Simple illustration of diagrams Figure 1 is a schematic diagram of a conventional photomask. FIG. 2 is a schematic diagram of a photomask of the present invention. FIG. 3 is a schematic diagram of another embodiment of the present invention. Explanation of symbols in the figure 10 Photomask 12 Quartz substrate 14 Pattern area 16 Inner edge envelope 18 Electrostatic ring 20 Outer edge envelope 30 Photomask 32 Substrate 34 Pattern area 36 ESD protection layer 40 Photomask 42 Substrate 44 Pattern area 46 Static electricity Discharge protective layer
第12頁Page 12
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW89110164A TW451109B (en) | 2000-05-25 | 2000-05-25 | Mask having ESD protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW89110164A TW451109B (en) | 2000-05-25 | 2000-05-25 | Mask having ESD protection function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW451109B true TW451109B (en) | 2001-08-21 |
Family
ID=21659855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW89110164A TW451109B (en) | 2000-05-25 | 2000-05-25 | Mask having ESD protection function |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW451109B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI511253B (en) * | 2010-02-12 | 2015-12-01 | Xintec Inc | Chip package |
| CN108107671A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of anti-static light shield |
| CN110928135A (en) * | 2019-12-20 | 2020-03-27 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
-
2000
- 2000-05-25 TW TW89110164A patent/TW451109B/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI511253B (en) * | 2010-02-12 | 2015-12-01 | Xintec Inc | Chip package |
| CN108107671A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of anti-static light shield |
| CN108107671B (en) * | 2016-11-25 | 2022-03-15 | 中芯国际集成电路制造(上海)有限公司 | Anti-static photomask |
| CN110928135A (en) * | 2019-12-20 | 2020-03-27 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
| CN110928135B (en) * | 2019-12-20 | 2023-09-08 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
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