TW502440B - Semiconductor fuse device and the manufacturing method thereof - Google Patents

Abstract

A manufacturing method for a semiconductor fuse device includes the following steps: providing a substrate, which comprises a first conductive layer defined with a first and a second wirings, and the first wiring and the second wiring are isolated; forming a first and a second contact plugs on the substrate electrically connected to the first wiring and the second wiring; forming a second conductive layer electrically connected with the first contact plug; and, forming a fuse layer, which is connected with the second conductive layer and electrically connected with the second contact plug.

Description

502440 V. Description of the invention (1) The present invention relates to a semiconductor fuse device and a manufacturing method thereof ', and more particularly to a semiconductor metal fuse device with a small circuit area and a manufacturing method thereof.

In the integrated circuit and its manufacturing process, many tiny semiconductor devices are placed on a piece of stone substrate. At the same time, in order to enable the integrated circuit to perform appropriate circuit operation as required, there are also many connection device options. The necessary electrical connections are made to certain circuit units in a typical way, and the typical way is to use a fuse as a connection device. These fuses can be connected to each other by deciding whether to fuse them or not by passing current or laser. Taking the state random access memory circuit as an example, fuses can also be used to maintain certain well-known transistor stacked gates in the manufacturing process. Once the circuit is completed, these fuses must be blown. FIG. 1A shows an upper view of a conventional semiconductor laser metal fuse; FIG. 16 is a cross-sectional view along line aa of FIG. U. The conventional laser-type metal fuse device includes a stone substrate, a wire 12 composed of two polycrystals 2, a contact plug 14 electrically connected to the wire 12, and a metal fuse layer 15. The insulating layer 13 is filled between the layers. When fusing, the laser fuse is used to blow the fuse layer 15 to determine whether the wires 12 are connected or not.

In addition, there is another type of electronic fuse device. Its structure is similar to the above :: shoot type? The wires are the same, but the way of fusing is to generate a large current to contact the plug 14 and the fuse layer 15. Because the fuse of the fuse device is defined as "H" shape, its width at both ends is relatively middle.

502440 V. Description of the invention (2) The current density of the middle part is higher than the current density of the two ends. The high heat generated by this high current density will cause the middle part of the fuse layer 15 to be fused first, and will not be blown. Fused in other parts. However, the above-mentioned conventional semiconductor laser-type metal fuse device requires a relatively large area and its manufacturing process is very complicated. The electronic fuse device must have a wider width at both ends to produce a higher current density in the middle. When it is used in copper processing, it must add an additional photomask. At the same time, the circuit required by the fuse device The area also increases due to the width of the two ends, which is not conducive to saving manufacturing costs and reducing circuit area. In order to understand that the semiconductor is replaced by a plane width, the method of the present invention includes an electrical layer definition edge. The base and the second contact are two conductive layers. Two-contact plug The present invention includes a first and a wire layer. Wherein the contact plug is divided into the first contact, and the manufacturing device of the vertical fusing device is provided with a first conductive-conducting connection between the first layer and the second layer of the plug-type electrical connection, and the first body dazzling wire device. , Plugging, conductive layer and dazzle. The first and second lines. The conductive layer is connected to the conductive layer and solves the above-mentioned problems. The present invention provides a metal fuse device and a method for manufacturing the same, so as to cause the effect of a difference in current density. One object is to provide a semiconductor with the following steps. A base is provided, the base first and second wires, and plugs are formed on the first and second bases with the first and second wires. Forming a plug with the first contact, forming a fuse layer, and electrically connecting the second conductive layer. Another object is to provide a semiconducting second wire, first and second contact plugs. The first and second wires are insulated from each other and electrically connected to the first and second plugs. The fuse layer and the

0503-6586TW; TSMC2001-0486; Vincent, ptd Page 5 502440

The first contact plug is electrically connected. Weiban ίί Lei !: The use of multiple metal layers and interposer plugs to form the connection column of the two melting lines, so that both ends have a larger ice degree than the middle part and can generate a higher current density in the middle part. Manufacture = Description of a semiconductor melting line device of the present invention and a brief description thereof Figures 1A and 1B show a conventional semiconductor laser-type metal fuse device; Figures 2A to 2F show a semiconductor electronic device according to an embodiment of the present invention The manufacturing process of a metal fuse line; FIG. 3 shows a semiconductor electronic metal wire melting device in one embodiment of the present invention; and FIGS. 4A and 4B show a semiconductor electronic metal wire melting device in another embodiment of the present invention. $ [Symbol description] 11, 21 ~ silicon substrate; 12, 22 ~ polycrystalline silicon wire layer; 13, 2 3, 2 5, 2 7 ~ insulation layer; 14, 241 ~ contact plug; 261, 281 ~ via plug 242, 262 ~ metal wire layer; 15,282 ~ metal fuse layer; 24,28 ~ metal layer. Examples

0503-6586TWF; TSMC2001-0486; Vincent.ptd page 6

502440 V. Description of the invention (4) Figures 2A to 2F show the manufacturing process of the semiconductor electronic metal fuse in this embodiment. First, as shown in FIG. 2A, a silicon substrate 21 is provided. The silicon substrate 21 has two polycrystalline silicon wire layers 22 insulated from each other. Next, as shown in FIG. 2B, an oxide layer 23 is deposited as an insulating layer 'and in the oxide layer 23, a via hole 231 is formed to align the polysilicon wire layer 22 with a photoresist lithography and etching steps. Then, as shown in FIG. 2C, a metal layer 24 is deposited to fill the via hole 231 and cover the oxide layer 23.

Furthermore, as shown in FIG. 2D, a metal wire 242 insulated from each other is defined in the metal layer 24 by photolithography and etching of the photoresist layer, and the metal layer 24 in the via hole 23j forms a contact plug. 241. Next, as shown in Fig. 2E, the three steps shown in Figs. 2B to 2D are repeated to sequentially form the oxide layer 25, the interposer plug 261 located in the oxide layer 25 and contacting the metal wire layer 242, and the metal wire layer 262. The oxide layer 27. The via hole 271 located at θ in the oxide layer 27. At the same time, a metal layer 28 is deposited to fill the via hole 271 and cover the oxide layer 27. Each of the gold wire layers 242 \ 262 and the via plugs 241 and 261 have the same width.

Finally, as shown in FIG. 2F, a metal fuse 28 is defined in the metal layer 28 by lithography and etching of the photoresist layer, and the metal layer 28 in the via hole 271 forms a via plug 281. In the semiconductor metal fusible link device of this embodiment, the metal wires 242, 262 and the interposer plugs 241, 261, 281 form a connecting post structure electrically connected to the metal fusible link 282. When a large current is connected to the post from one end Gold flow

0503-6586TW; TSMC2001-0486; Vincent.ptd Page 7 502440 V. Description of the invention (5) When the fused wire 282 reaches another connecting post, the depth of the connecting post is greater than the depth of the metal melting wire layer, causing the metal fuse A high current density is generated in 282, so that the metal fuse 282 will be blown first. Therefore, in this embodiment, the shape of the metal fuse can be a line of equal width without widening the two ends into a "Η" shape. Therefore, this embodiment can be shown in the structure of FIG. 3, and its fuse layer

The connecting posts 291 and 292 at both ends of 282 are composed of the η-layer wire layer, the η-layer via plug, and the η-1-layer wire layer. An extremely high current density can be generated in the fuse layer 282. In a practical example, the depth of the fuse layer can be 3.5k and the depth of the connecting pillars 291 and 292 on both sides can reach 9k, which can produce about The current density difference of i0: i 'can cause a fuse phenomenon in the fuse layer 282 with a current of 30 mA for about 20 // s.

In addition, the present invention may also have a structure with different depths at both ends. As shown in FIG. 4A, the connecting post 291 on the side of the fuse layer 282 is composed of the n-layer wire layer, the n-layer dielectric plug, and The η-1 layer is composed of the wire layer, and the connection post 292 on the other side is only composed of the η layer of the wire layer; or, as shown in FIG. 4B, the connection post 291 on the fuse layer 282 side It consists of the n-th wire layer, the n-th interposer plug, and the n + 1 layer wire layer, and the other side of the connecting post 292 is only composed of the n-th wire layer. To sum up, the present invention increases the depth of the two ends of the fuse wire by using a connecting post composed of a plurality of wire layers and via plugs in the metal interconnect layer, thereby creating a middle portion and two ends of the fuse wire. The difference in current density makes the fuse

The section was earlier than the other areas—

0503-6586TW; TSMC2001-0486; Vincent.ptd Page 8 502440

Claims (1)

Sixth, the scope of patent application 1. A semiconductor fuse device 1 provides a substrate, the substrate includes the following steps, the first and second lead phases 5 conductive layers define a first and 4 ice mutual insulation. A first contact electrically connected to the first contact plug and a second contact electrically connected to the first contact plug are formed on the substrate to form a fused wire. Layer, which is electrically connected to the second lead plug; an electrical layer connected to the second layer and the second contact method, which further includes the following steps: 2 as described in item 1 of the patent application scope; and Forming a third conductive layer electrically connected to the second contact plug; so that the fuse layer is connected to the third conductive layer. 3. The method according to item} of the patent application scope, wherein the substrate is a silicon substrate. 4. The method according to item 1 of the patent application, wherein the first conductive layer is a polycrystalline silicon layer. 5. The method according to item 1 of the scope of patent application, wherein the second conductive layer and the fusible link layer are metal layers. 6. A semiconductor fuse device comprising: a first and a second wire, the first and second wires are insulated from each other; a first and a second contact plug are electrically connected to the first and the second, respectively 0503-6586TW; TSMC2001.0486; Vincent.ptd Page 10 502440 6. Application scope: a conductive layer electrically connected to the first contact plug; and a fuse layer connected to the conductive layer and connected to the The second contact plug is electrically connected. 7. The device according to item 6 of the scope of patent application, which further includes a third conductive layer, which is electrically connected to the second contact plug and connected to the fuse layer. The device described above, wherein the substrate is a silicon substrate. 9. The device according to item 6 of the patent application scope, wherein the first and second wires are polycrystalline silicon layers. 10. The device according to item 6 of the scope of patent application, wherein the conductive layer and the fusible link layer are metal layers. 0503-6586TWF; TSMa〇01-0486; Vincent.ptd Page 11