TW516989B - Polishing method using a reconstituted dry particulate polishing composition - Google Patents
Polishing method using a reconstituted dry particulate polishing composition Download PDFInfo
- Publication number
- TW516989B TW516989B TW90109446A TW90109446A TW516989B TW 516989 B TW516989 B TW 516989B TW 90109446 A TW90109446 A TW 90109446A TW 90109446 A TW90109446 A TW 90109446A TW 516989 B TW516989 B TW 516989B
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- Prior art keywords
- polishing
- dry
- composition
- solid composition
- polishing method
- Prior art date
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Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
516989 A7 B7 五、發明説明() 1 發明領域 本發明大體上有關一種拋光漿及其使用於拋光之用途, 尤其有關一種使用重組乾燥顆粒拋光組合物拋光工作片之 方法。 背景 使用於積體電路晶圓之化學機械拋光(CMP)的拋光調配 物及使用於高科技光學組件或其他超細表面整理應用之拋 光調製物一般係由固體(研磨劑)與各種化學成份結合之含水 分散液所組成。該種市售材料可爲固體之單一混合物或分 成數份,一份含有濃縮型式之研磨劑,另一份則含有濃縮 型式之化學成分。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 隨著化學機械拋光CMP技術愈來愈重要,發展出了複雜 之化學及研磨系統。此等含水之調配物需具有長效適用期 及良好安定性,使得該材料在儲存期間不變化。儲存期間 未受控制或過度之物理性變化會使得此等調配物無法使用 於其用途。例如,當儲存固體之混合物時,固體於儲存容 器中沉降而形成堅硬之沉積物,消費者無法再輕易地使用 該混合物。而且,若該化學系統之反應性物質的濃度產生 明顯變化,則該拋光漿無法使用於其所需用途。 物理及化學不安定性之主要原因經常是拋光漿一般係包 裝成含水分散液型式販售。最近,已發展一種化學機械拋 光CMP系統,其中研磨劑係包含於拋光墊中,而不含於提 供於該拋光界面上之液體拋光組合物中。然而,此等類型 之拋光墊所使用之液體拋光組合物經常具有與習用含水分 -4- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 經濟部中央標準局員工消費合作衽印製 516989 五、發明説明(2 ) 散拋光漿相同類型之化學不安定性。 製備固體顆粒研磨裝組合物及乾燥該組合 f㈣光漿之不衫性。化學及研磨成Μ者之安定= 心可猎者消除該系統中之“含水,,部分而最小化。是故 製備組成實際上與最終使用者將 ’ 一 訂便用者相冋之乾燥顆粒拋 水^由«拋光漿組合物,該拋錢可在勒次 氣備乾燥拋光漿之後“時間滚結 兩 果口 故其可局取終使用者所 而心狀怨,長達六個月或更久。 邊拋先漿組合物係揭示於 年十月6曰申請之共待審共讓受專利申請案序號 〇9/413,〇83中。根據所揭示之方 3乾燥顆粒拋光漿組合 於展〈前簡單地重組。雖然乾燥拋光漿製備方法之 ,展已大幅改善長期儲存拋光漿組合物之能力,但進—乎 發展之使用重組拋光漿的方法 乂 方法。 了棱供進一步改善之拋光 發明概述 、、本發明提出一種使用乾燥顆粒固體組合物之拋光方法, =:係包括化學機械拋光組合物,其包含可使用於化 予機:抛光CMP而實質完全以水移除之化學物質,可在使 則即時重組成化學機械拋光組合物。此組合物係經由 、、& 取置,而成爲含水之拋光溶液 顆粒固體組合物可包含研磨粒子、氧化劑、錯合 :::純化劑、界面活性劑、分散劑、或使用於化學機 械拋先桌中之任何類型化合物。 輸送至該重組裝置之乾燥顆粒固體量可爲適於拋光一工 表纸張尺度適家標準(CNS ) Α4規格( 裝-- (請先閲讀背面之注意事項再填寫本頁) 訂 4 -5, 五、 發明説明( 經濟部中央標準局員工消費合作社印製 冻士 ,、 乍片又I,或該系統可於大批量下或於 建~流動模式下;^ 。4、 孩重組含水拋光溶液可在使用於拋 2作之前,進行偵測其物理或化學性質、過濾、與其他 ::::摻合、或依其他方式修飾。 具只例中,本發明方法係包括提供乾燥顆粒固體組 5物,及奮細一奴旦、L 息、 、 里足乾燥顆粒固體組合物,以形成一數 I之含水組合物〇今本y ^ ^ Μ θ水組合物之量貫質上恰足以完成預 疋數量之工作片的拋光。 ^㈣^中’本發明方法係包括決定欲拋紋固定 、乍片製備乾燥顆粒固體組合物,其數量恰足以形 、可几全拋光1¾固定數量工作片之量的重組拋光漿。 圖式簡單説明 圖1係用以進行本發明方法之典型喷乾器的示意圖; 圖2係爲説明本發明乾燥後之方法的示意圖; 圖係爲可用以進行本發明方法之典型拋光漿重組裝置之 示意圖;且 圖4係爲實施例1之三種拋錢的粒後分佈梯級頻佈圖。 較佳具體實例詳述 本4月k出種保持拋光组合物之研磨劑與化學品比例 ,而不使含水分散液之效果不穩定及老化之方法。該研磨 劑及化學品係針對最終使用者即時使用之情況混合,或其 可製備成濃縮物’組份之比例皆成—公倍數關係。製造該 抛^蒙之後,即時藉噴乾脱水、冷來乾燥、或任何數量之 目前乾燥或脱水方法。形成之乾燥顆粒固體組合物通常係 (請先閲讀背面之注意事項再填寫本頁) Φ 項再填丄 裝· 、11 -6 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 4 4 經濟部中央標準局員工消費合作社印製 516989 五、發明説明( 爲可流,粉末,可包裝於習用袋中或其他非反應性容器中 ,而在貫其不降解的情況下無限期地儲存。 ☆本毛明另一項優點係爲產物重量減少多達約70百分比至 、百刀比,在考慮液體、含水拋光漿之世界性運輸之下 ,相當地節省成本。 當該抛《好使用時’最終使用者可藉著添加適量之水 吏用。刀切刀政态分散’而重組該乾燥顆粒固體組合物 。亦可視需要添加其他化學品,而不需犧牲本發明之用途 。形成之抛光漿經過濾,而可使用於化學機械拋光cMp操 作中。孩拋光漿亦可在使用之前偵測pH及其他性質,可適 地進行調整。 提供單一份抛光漿(用以抛光特定數量之工作片或一抛光 周期)時,可混合後續批之拋光漿,而現批之抛光漿則用於 拋光。較佳混合單元係爲在不同批料之間自行清潔者,因 爲拋光水之連,..貝批料可能具有不同组成。較佳混合單元係 包括不污染拋光漿之材料。 如吾人所預期,形成拋光漿不會產生非必要之附聚體。 推論此因該拋光漿在乾燥之前恰調至完全充分分散之狀態 。忌組份i膠態分散混合物乾燥時,研磨劑顆粒被均勻存 在足乾燥落解鹽所包圍,有效地保護該研磨粒子防止其彼 此附聚。當該鹽於重組過程中溶離時,該研磨劑粒子於基 本上與其在乾燥之前所存在之狀態相同的情況下釋出。 使用於化學機械拋光漿中之典型次微米研磨劑有氧化物 諸如氧化銘、二氧化石夕、氧化錦、氧化飲、氧化錯、氧化 本紙張尺度適用巾關家鮮(CNS) A4規格TITO·公羞一516989 A7 B7 V. Description of the Invention (1) Field of the Invention The present invention relates generally to a polishing slurry and its use for polishing, and particularly to a method for polishing a work piece using a reconstituted dry particle polishing composition. Background Polishing preparations for chemical mechanical polishing (CMP) of integrated circuit wafers and polishing preparations for high-tech optical components or other ultra-fine surface finishing applications are generally composed of a solid (abrasive) and various chemical components. Consisting of an aqueous dispersion. This commercially available material can be a single mixture of solids or divided into several parts, one part containing a concentrated type of abrasive and the other part containing a concentrated type of chemical ingredients. Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the notes on the back before filling out this page). As CMP technology of chemical mechanical polishing becomes more and more important, complex chemical and polishing systems have been developed. These aqueous formulations need to have a long-term pot life and good stability so that the material does not change during storage. Uncontrolled or excessive physical changes during storage can make these formulations unusable for their use. For example, when a mixture of solids is stored, the solids settle in the storage container to form a hard deposit, and the consumer can no longer easily use the mixture. Moreover, if the concentration of the reactive substance in the chemical system changes significantly, the polishing slurry cannot be used for its intended purpose. The main cause of physical and chemical instability is often that the polishing slurry is generally sold in the form of an aqueous dispersion. Recently, a chemical mechanical polishing CMP system has been developed in which an abrasive is contained in a polishing pad and is not contained in a liquid polishing composition provided on the polishing interface. However, the liquid polishing composition used for these types of polishing pads often has a water content that is compatible with the conventional moisture content -4- this paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm). Imprint 516989 V. Description of the invention (2) Chemical instability of the same type of loose polishing slurry. Preparation of a solid particle abrasive composition and drying of the combination f. The stability of the chemistry and the miller = the hunter eliminates the "water content" in the system, which is partially and minimized. The reason is to prepare the dry particles that actually compose the end-user's disposal Water ^ from «Polishing slurry composition, the throwing money can be used after the gas preparation to dry the polishing slurry." Time rolls off two fruit mouths, so it can take the end user's heart complaint, up to six months or more Long. The edge-polishing composition is disclosed in the patent application serial number 009/413, 〇83, which was filed on October 6, 2009. According to the disclosed formula 3, the dry particle polishing slurry combination was simply reorganized before the exhibition. Although the method of preparing dry polishing slurry has significantly improved the ability to store polishing slurry composition for a long time, the method 重组 method using recombinant polishing slurry has been developed. In order to summarize the polishing invention for further improvement, the present invention proposes a polishing method using a dry particulate solid composition. =: It includes a chemical mechanical polishing composition, which contains a chemical composition that can be used for chemical processing: polishing CMP and substantially completely Chemicals removed by water can be immediately reconstituted into chemical mechanical polishing compositions. This composition is taken through, and & to become an aqueous polishing solution. The granular solid composition may include abrasive particles, oxidants, complexes :: purification agents, surfactants, dispersants, or used in chemical mechanical polishing Start with any type of compound in the table. The solid amount of dry particles delivered to the reorganization device can be suitable for polishing a worksheet paper size (CNS) Α4 specification (pack-(Please read the precautions on the back before filling this page) Order 4 -5 V. Description of the invention (Crystals printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, the first film and I, or the system can be used in large quantities or under the construction ~ flow mode; ^. 4, reconstituted aqueous polishing solution It can be used to test its physical or chemical properties, filtration, blending with other :::, or other modification before being used in polishing. For example, the method of the present invention includes providing a dry granular solid group 5 items, and dried fine solids, L, and L, dry granular solid composition to form a number of water-containing composition. The amount of y ^ ^ θ water composition is sufficient to complete the quality. Polishing of a predetermined number of working pieces. ^ ㈣ ^ 中 'The method of the present invention includes deciding to fix the pattern and preparing a dry granular solid composition, which is just enough in shape and can be polished in a fixed number of working pieces. The amount of reorganized polishing slurry. Single description FIG. 1 is a schematic diagram of a typical spray dryer used to perform the method of the present invention; FIG. 2 is a schematic diagram illustrating a method of the present invention after drying; FIG. Is a schematic diagram of a typical polishing slurry reorganization device that can be used to perform the method of the present invention And FIG. 4 is a step-by-step frequency distribution diagram of three types of coin thrown distribution in Example 1. The preferred specific examples are detailed in this April k to maintain the abrasive to chemical ratio of the polishing composition without water. Dispersion effect is unstable and the method of aging. The abrasive and chemicals are mixed for the immediate use of the end user, or the ratio of the components that can be prepared into the concentrate is in a common multiple relationship. Immediately after spraying, dehydration by spray drying, cold to dry, or any number of current drying or dehydration methods. The dried granular solid composition is usually (please read the precautions on the back before filling this page) Φ item and then fill in Equipment ·, 11 -6-This paper size is applicable to Chinese National Standard (CNS) A4 (210X 297 mm) 4 4 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 516989 V. Invention Note (For flowable, powder, can be packed in custom bags or other non-reactive containers, and stored indefinitely without degradation. ☆ Another advantage of Ben Maoming is that the weight of the product is reduced. It reaches about 70% to 100 knife ratio. Considering the worldwide transportation of liquid and water-containing polishing slurry, it saves considerable costs. When it is good to use, the end user can use an appropriate amount of water for official use. The knife-shaped knife is dispersed stately to reconstitute the dry granular solid composition. Other chemicals can be added as needed without sacrificing the use of the present invention. The resulting polishing slurry can be filtered and used in chemical mechanical polishing cMp operations .You can also check the pH and other properties before use, which can be adjusted appropriately. When a single serving of polishing slurry is provided (for polishing a specific number of work pieces or a polishing cycle), subsequent batches of polishing slurry can be mixed, while the current batch of polishing slurry is used for polishing. The preferred mixing unit is one that cleans itself between different batches. Because of the connection of the polishing water, the... Batches may have different compositions. Preferred mixing units include materials that do not contaminate the polishing slurry. As I expected, the formation of a polishing slurry does not produce unnecessary agglomerates. It is inferred that the polishing slurry was adjusted to a completely fully dispersed state just before drying. When the colloidal dispersion mixture of component i is dried, the abrasive particles are surrounded by the dry salt which is uniformly present, which effectively protects the abrasive particles from agglomeration. When the salt dissolves during the recombination process, the abrasive particles are released essentially in the same state as they existed before drying. Typical sub-micron abrasives used in chemical mechanical polishing slurries are oxides such as oxide oxide, stone dioxide, oxide brocade, oxide drink, oxidation error, and oxidation. This paper is suitable for towels and household products (CNS) A4 size TITO · Shy one
---------0^------1T-----IMW, (請先閱讀背面之注意事項再填寫本V3C 516989 經濟部中央標準局員工消費合作社印製 五、發明説明() 5 锆寺。研磨粒子通常係使用於CMp漿中,濃度約1重量百八 比f約3〇重量百分比。較佳係氧化銘、二氧化石夕、氧化: 、氧化鈦、或其混合物,濃度約3重量百分比至。重量百分 比0 可使用於⑽操作中之化學品類型係爲氧化劑、化與银 刻劑、分散劑、界面活性劑、錯合劑、二氧切速率:制 ^、純化劑、二氧切保護劑、缓衝劑及抑制劑,所有物 貝皆存在於本發明乾燥漿中。 -般氫氧化物,諸如氫氧化_、氫氧化銨、及氫氧化納 ’及各種胺係作爲CMP㈣磨劑之分散劑。已發現亦可使 用已知爲胺基醇的類型之化合物。 氧化剑通^係爲化學機械拋光漿之組份,用使金屬層氧 化成其對應之氧化物,諸如將鶴氧化成氧化鶴。該層經機 械拋光以自該層移除氧化嫣。雖可使用廣大範圍内之氧化 組份,但較佳組份係包括氧化金屬鹽、氧化金屬錯合物、 鐵鹽諸如硝酸鹽、硫酸鹽、EDTA、檸檬酸鹽、氰鐵酸鉀等 鋁i、鈉鹽、鉀鹽、銨鹽、四級銨鹽、鳞鹽、過氧化物 、氯酸鹽、過氯酸鹽、過錳酸鹽、過硫酸鹽、碘酸鹽及其 混合物。該氧化組份一般於該拋光漿中之含量係足以確定 金屬層快速氧化,而使該拋光漿之機械及化學拋光組份平 衡。氧化劑於化學-機械拋光漿中之含量一般係由約〇·5重量 百分比至約15重量百分比,較佳係由約丨重量百分比至約7 重量百分比。 本發明乾燥顆粒固體組合物可視情況另外包含作爲供 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公楚) (請先閲讀背面之注意事項再填寫本頁)--------- 0 ^ ------ 1T ----- IMW, (Please read the notes on the back before filling in this V3C 516989 Printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Description of the Invention (5) Zirconium Temple. Abrasive particles are usually used in CMP slurry, with a concentration of about 1 weight eight hundred to f about 30 weight percent. Preferred are oxide oxide, dioxide, oxide: titanium oxide, or Its mixture has a concentration of about 3% by weight to 0% by weight. The types of chemicals that can be used in the operation of rhenium are oxidants, chemical and silver engraving agents, dispersants, surfactants, complexing agents, and dioxygen cutting rates: , Purifying agent, dioxin protecting agent, buffering agent and inhibitor, all the shellfish are present in the dry pulp of the present invention.-General hydroxides, such as hydroxide, ammonium hydroxide, and sodium hydroxide 'and Various amines are used as dispersants for CMP honing agents. It has been found that compounds of the type known as amino alcohols can also be used. Oxidation Jiantong is a component of chemical mechanical polishing slurry, which is used to oxidize the metal layer to its corresponding Oxides, such as oxidizing cranes to oxidized cranes. This layer is mechanically polished to Oxidation removal. Although a wide range of oxidation components can be used, the preferred components include metal oxide salts, metal oxide complexes, iron salts such as nitrate, sulfate, EDTA, citrate, ferric cyanide Aluminum, sodium, potassium, ammonium, quaternary ammonium, scaly, peroxide, chlorate, perchlorate, permanganate, persulfate, iodate, etc. The content of the oxidation component in the polishing slurry is generally sufficient to determine the rapid oxidation of the metal layer, so that the mechanical and chemical polishing components of the polishing slurry are balanced. The content of the oxidizing agent in the chemical-mechanical polishing slurry is generally about 0.5 weight percent to about 15 weight percent, preferably from about 丨 weight percent to about 7 weight percent. The dry granular solid composition of the present invention may additionally be included as applicable for the size of this paper as the Chinese National Standard (CNS) A4 specification (210X 297 Gongchu) (Please read the notes on the back before filling this page)
4 項再填A 裝· 、11 516989 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明() 64 items are filled with A, 11 516989 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () 6
Si〇2使用之錯合劑或钳合劑的化合物。該錯合劑及麵合劑 係描述於美國專利第5,391,258號及美國專利第5,476,6〇6號 中’其以引述方式併入本發明。此等化合物需具有至少兩 個存在於結構中之酸基,影響該二氧切之錯合。酸種類 係定義爲具有可解離質子之官能基。此㈣包括但不限於 叙基、嫂基、磺基及二氧磷基。羧基及羥基因其存在最多 樣之有效種類而較佳。特別有效之結構係具有兩個或多個 羧基,羥基係位於α位置上,諸如直鏈單-及二_羧酸及鹽, 包括例如韻果酸及蘋果酸鹽、酒石酸及酒石酸鹽及葡糖酸 及葡糖酸鹽。亦可使用具有相對於羧基位於α位置上之二 級或三級羥基之三-及多元羧酸及鹽,諸如擰檬酸及擰檬酸 鹽。亦可使用含有苯環之化合物,諸如鄰二_及多羥基芊酸 及酸鹽、苯二甲酸及酸鹽、焦兒茶酚、焦掊酚、掊酸及掊 酸鹽及丹寧酸及丹寧酸鹽。此等錯合劑於化學機械拋光 CMP漿中之用量可約〇. i重量百分·比至約7重量百分比。較 佳係由約2重量百分比至約4重量百分比。 此外,該拋光漿組合物可包括基本上不含金屬離子之化 學蝕刻劑。典型之蝕刻劑係包括過硫酸鹽、硝酸鹽、硫酸 鹽、磷酸鹽、檸檬酸鹽、草酸鹽、其混合物等。該蝕刻劑 以非金屬過硫酸鹽爲佳,諸如過硫酸銨。該蝕刻劑有利於 進行化學機械拋光之金屬的溶解,因此使該金屬可溶於該 含水分散液中。此等化學品通常於化學機械拋光漿中之冬 量係由約1重量百分比至約1〇重量百分比之範圍。較佳係約 2重量百分比至約7重量百分比之範圍。Sio2 is used as a complexing or clamping compound. The complexing agent and the doughing agent are described in U.S. Patent No. 5,391,258 and U.S. Patent No. 5,476,606 which are incorporated by reference into the present invention. These compounds need to have at least two acid groups present in the structure, affecting the dioxin incorporation. Acid species are defined as functional groups with dissociable protons. This fluorene includes, but is not limited to, sulfenyl, fluorenyl, sulfo, and dioxo. The carboxyl group and the hydroxyl group are preferred because they have the most effective species. Particularly effective structures have two or more carboxyl groups, and the hydroxyl group is at the alpha position, such as linear mono- and di-carboxylic acids and salts, including, for example, rhylic acid and malate, tartaric acid and tartrate, and glucose Acids and gluconates. Tri- and polycarboxylic acids and salts, such as citric acid and citric acid, having secondary or tertiary hydroxyl groups at the α position relative to the carboxyl group can also be used. Compounds containing benzene rings can also be used, such as o-di- and polyhydroxyarsanoic acid and acid salts, phthalic acid and acid salts, pyrocatechol, pyrogallol, gallic acid and gallate, and tannic acid and dan Ningrate. The amount of these complexing agents in the chemical mechanical polishing CMP slurry may be from about 0.1% by weight to about 7% by weight. A more preferred range is from about 2 weight percent to about 4 weight percent. In addition, the polishing slurry composition may include a chemical etchant that is substantially free of metal ions. Typical etchant systems include persulfate, nitrate, sulfate, phosphate, citrate, oxalate, mixtures thereof, and the like. The etchant is preferably a non-metallic persulfate, such as ammonium persulfate. The etchant facilitates the dissolution of the metal subjected to chemical mechanical polishing, thereby making the metal soluble in the aqueous dispersion. The amount of these chemicals usually in the chemical mechanical polishing slurry ranges from about 1 weight percent to about 10 weight percent. Preferably it is in the range of about 2 weight percent to about 7 weight percent.
If HBl —·ϋ·1 ΙΒ^Ιϋ fl_^i_l— mi —·Ι·1_ϋ ^n··· ^ϋϋ··· ^—^ϋ· t (請先閲讀背面之注意事項再填寫本頁) -9 - 組 5 % 3 % 4 % 8 8 % 五、發明説明( 化學機械拋光漿經常包本其 制劑。淹杏、府0 土本上不含金屬離子之腐蝕抑 、田(腐蝕抑制劑係包括 ^ 并嗟修BT)、及其他—般盘 —/(BTA)、虱硫基苯 舍丨為丨 々. ”屬邊如銅—起使用之腐蝕抑 表㈣在拋光操作㈣及之後料曝露之金屬 ::負面影響。典型腐㈣制劑於化學機械抛光浆中之 占夏係低於約1重量百分比。較 平乂住係由約0.05重量百分比至 40.6重量百分比之範圍内。 製備乾燥顆粒固體组人必7 士 @ „ 口物<罘一個步驟係決定在使用時 ’所有組份於抛光漿中之實際比例。例如,就包括約5百分 比固II研磨劑及約7百分比化學成分且具有兩種化學成份之 拋光漿而言,可使用之調配物的總重量組成可 成: η 固體研磨劑 化學品A 化學品B 水 移除水之後,該固體及溶解之固體保持5/3/4之比例。噴 乾時,通常較佳係使得預先乾燥之拋光漿濃縮物具有儘可 能最高之固體含量,以降低需蒸發之水量,因此降低成本 且增加通量。因此,製造供乾燥使用之濃縮物時,應使用 5/3/4比例乘以一因數之成份。該因數一般係由一組份之溶 解度限制或最大固體負荷量限制而決定。例如,其中化學 品A具有高値或無限制之溶解度且化學品B僅可溶解至最大 濃度約10百分比時,爲了製得溶解所有化學組份之完全均 ^ -10- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) ---------ϋ丨裝------1Τ-----Awm (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 516989 A7 B7 五、 發明説明( 經濟部中央標準局員工消費合作社印製 勻分散液,最大濃度因子係爲01〇/〇 〇4或2 5。因此,預先 乾燥拋光漿之組份的濃度係藉乘以各組份而決定,不同處 係水係乘以因子2·5。乾燥拋光漿之最終濃度係爲: 2.5x5 = 12.5 % 2.5x3=7.5 % 2.5x4=10.0 〇/0 餘量 70.0 〇/。 、此凋配物在乾燥時產生乾燥顆粒固體組合物,含有三種 活性成分,具有如同即時可用拋光漿之5/3/4比例,但濃縮 ,噴乾器起始物質時,該噴乾操作更有效。該乾燥技術可 馬夕種中〈-種,包括噴乾、冷;東乾燥、閃蒸乾燥、直空 乾燥、加熱盤或輸送帶乾燥等。較佳技術中,使用喷乾, 因其提供較易控制粒#、逵度%、及產物之再現性的最^產 物。 ,典型σ貧乾器之示意圖係出示於圖.i。嘴乾器10係採用在大 2才;14中循熱風12的組合物,其中藉旋轉霧化器18或 =壓吸氣將㈣/液體拋光槳16噴人該加熱空氣中,於此處 ^除即時幾乎所有水含量,形成不含水之固體粒子20。粒 再於氣流巾前進時,進—步被錢至我槽14之出口點 ,由旋風器或收集容器捕集,通“元件Μ所示。許多 較粗之物質係收集於收集容器中,而較小或較 :(、二(細末)則收集於旋風分離器中。本發明中,兩種收 木万’皆令人滿意,因爲乾燥粒子之尺寸並非重點。 本無明所進行之乾燥後處理係圖示於圖2中。收集之後, 固體研磨劑 化學品A 化學品B 水 m 張尺度 : mi nn m·— I B^m nn Ha (請先閲讀背面之注意事項再填寫本頁)If HBl — · ϋ · 1 ΙΒ ^ Ιϋ fl_ ^ i_l— mi — · Ι · 1_ϋ ^ n ··· ^ ϋϋ ··· ^ — ^ ϋ · t (Please read the precautions on the back before filling this page)- 9-Group 5% 3% 4% 8 8% V. Description of the invention (Chemical mechanical polishing slurry often contains its preparations. Submerged apricots and fu 0 soils do not contain metal ion corrosion inhibitors, fields (corrosion inhibitors include ^ And repair BT), and other-general disk-/ (BTA), thiothiobenzene house 丨 is 丨 々. "The edge is like copper-the corrosion inhibition table used in the polishing operation and subsequent material exposure Metal :: Negative effect. The proportion of typical rotten preparations in chemical mechanical polishing slurry is less than about 1% by weight of the summer series. The flatter simmers range from about 0.05% by weight to 40.6% by weight. Preparation of dry granular solids Renbi 7 persons @ 口 口 < 罘 One step is to determine the actual proportion of all components in the polishing slurry when used. For example, it includes about 5 percent solid II abrasive and about 7 percent chemical composition and has two For a polishing slurry with a chemical composition, the total weight composition of the formulations that can be used can be: η solid Abrasive Chemical A Chemical B After the water is removed, the solid and dissolved solids maintain a ratio of 5/3/4. When spray-dried, it is usually preferred to make the pre-dried polishing slurry concentrate as high as possible. Solid content to reduce the amount of water that needs to be evaporated, thereby reducing costs and increasing flux. Therefore, when manufacturing concentrates for drying, use a 5/3/4 ratio multiplied by a factor. The factor is generally determined by one It is determined by the solubility limit or maximum solid loading limit of the component. For example, when chemical A has high solubility or unlimited solubility and chemical B can only be dissolved to a maximum concentration of about 10%, in order to dissolve all chemical components Completely uniform ^ -10- This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) --------- ϋ 丨 装 ------ 1T ----- Awm (Please read the notes on the back before filling out this page) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 516989 A7 B7 V. Description of the Invention 01〇 / 〇〇4 2 5. Therefore, the concentration of the components of the pre-drying polishing slurry is determined by multiplying by each component, and the water system at different locations is multiplied by a factor of 2.5. The final concentration of the drying polishing slurry is: 2.5x5 = 12.5% 2.5x3 = 7.5% 2.5x4 = 10.0 〇 / 0 balance 70.0 〇 /. This wither produces a dry granular solid composition when dried, contains three active ingredients, and has 5/3/4 as a ready-to-use polishing slurry Proportional, but concentrated, the spray drying operation is more effective when spraying the starting material of the dryer. This drying technology can be used in Ma Xi species, including spray drying, cold; east drying, flash drying, direct air drying, heating plate or conveyor drying. In a preferred technique, spray-drying is used because it provides the most product that is easier to control particle size,%, and reproducibility of the product. The schematic diagram of a typical σ lean dryer is shown in Fig. I. The mouth dryer 10 is a composition of hot air 12 which is used in the big 2; 14; among them, the rotary atomizer 18 or pressure suction is used to spray the radon / liquid polishing paddle 16 into the heated air, here ^ Except for almost all water content, solid particles 20 that are free of water are formed. The pellets are further advanced by the air to the exit point of our tank 14 and captured by a cyclone or a collection container, as shown in "Element M. Many coarser materials are collected in the collection container, and Smaller or more: (, two (fine)) are collected in the cyclone separator. In the present invention, both types of harvesters are satisfactory, because the size of the dried particles is not the point. After drying by this ignorance The processing system is shown in Figure 2. After collection, the solid abrasive chemical A chemical B water m scale: mi nn m · — IB ^ m nn Ha (Please read the precautions on the back before filling this page)
、1T 镛 -11 - 516989 五、發明説明( 經濟部中央標準局員工消費合作社印製 乾燥之粉末輸送至 而製得大批量。乾燥於末pt 於此處收集乾燥粉末, 類似裝置中乾燥採人大型雙圓椎擦合器26中或 摻合乾燥物質,個別換二“粉f批全均勻。藉著 力 >。物質之.數量可遠大於液體同等物 ’因爲水之重督75卿;^主π 、一… 及肢和已自濃縮物移除。均勻之大批量對 於半導體工業特別重要,a — ^ 、. 里要 因馬母一批新物料在使用前皆需 先檢測或作質量測定。 :摻口〈後’乾燥顆粒固體組合物之製備完全。該乾燥顆 粒口 ^、、且口物係包裝於任何適當類型之容器中,諸如襯有 塑料纖維之桶、式七日女,, 成硯有塑料之紙袋。期望容器尺寸等於乾 ^顆粒固體組合物之量’易於重組之後使用於各個抛光作 用。根據本發明,該乾燥顆粒固體組合物可包裝於各種 裝尺寸特疋之包裝尺寸係視該乾燥顆粒固體組合物而# 、、用途而足例如,就單一次用於拋光單一工作片或少數 工作片足拋光漿份量而言,該乾燥顆粒固體組合物可包 於單一使用包裝27中。就較大批量工作片之拋光而言, 批包裝28可用於儲存該乾燥顆粒固體組合物,而於數批 下於夕個刀批包裝29中填裝乾燥顆粒固體組合物。藉 將孩乾燥顆粒固體組合物包裝於用以拋光特定數量工作 之包裝尺寸’可在最佳量之拋光漿下進行拋光方法。是 ’该抛光方法之品質可改善,而降低該拋光方法之總 本。 可於例示混合單元30中進行該乾燥顆粒固體組合物〜 組’如圖3之流程圖所示。該設備係包括導入測定量之去 包 最 裝 分 量 著 片 故 成 之重 離 ----φά------IT-----MW, (請先閲讀背面之注意事項再填寫本頁) 12- 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨〇X 297公楚) 516989 Α7 Β7 經濟部中央標準局員工消費合作社印製 五、發明説明(10) 子水32及粉末拋光漿34於混合槽36中。混合單元30係包括 垂直I置於混合槽36中之高速轉子定子38。高速轉子定子 3 8可提供極高剪切。在適當地混合該重組抛光漿之後(通常 藉由每加备產物消耗多少能量而決定),該重組拋光漿自重 組設備泵經次微米濾器系統4〇,而到達拋光系統或進入日 槽(未不)中。孩重組拋光漿可自該日槽循環,而由最終使用 者使用於拋光方法中。 熱W此技蟄者已知可對拋光漿系統進行數種修飾。例如 ,混合槽36之容量可由約丨公升至約1〇公升。此外,混合單 凡3〇可爲獨置系統,或拋光裝置之系統組件。另-備擇例 中⑺口單元3 0可構建成輸送穩定量之重組拋光漿,其速 率男貝上與所結合拋光裝置之消耗速率相同,該抛光聚消 耗速率係例如每個工作片約〇·5公升至約15公升。另一備擇 例中,該乾燥顆粒固體組合物可於丸粒或鏡劑形式下直接 進料土此合槽36中,或該丸粒可經研磨或使用作爲粉末拋 光漿34。是故,混合單元3〇係爲各種可重組本發明乾燥顆 粒固體組合物之設備結構中之唯一實例。 w入'月(具岐貫例進行之重組方法中,混合槽36係 置入去離子水32,關_42且開啓_ 欲使用於單一充嫿 b了置 /、(、,.心里的水,或水可使用進行重组 法I周期時間而緩緩地添一 招w山 一 土少有部分水導入混 ⑶中,則啓動重組_,以於 啓動轉子定子38。於幹制速率下中$入水, 某量之!…於乜制速羊下,猎由粉末進料器以, '㈣體組合物34導人循環管線47中。拋光 入 方 合 並 將 漿 ----------------、玎----- (請先閲讀背面之注意事項再填寫本頁) W 尺度適用 -13- 經濟部中央標準局員工消費合作社印製 ^16989 A7 —___ B7 五、^^--— 11 經由循環管線47之循環係持續至得到所需之抛光漿濃度及 黏度。該偵測系統50連續分析該拋光漿之物性及化性,例 如固體I百分比,及ρΗ等。雖然所示之偵測系統刈係連接 於混合槽36,但偵測功能亦可於循環管線47之某點上進 行。 一彳于到所品之拋光漿,關閉轉子定子3 8並開啓閥4 2, 以將預定量之重組拋光漿輸送通經濾器系統4〇。視特定應 用而定,該重組拋光漿係輸送至日槽,或直接至拋光裝置 之口板。另一備擇具體實例中,該日槽可作爲混合及分散 奋态。拋光漿輸送期間,重組泵46可例如藉著防止混合槽 36中之固體沉降而保持活性,以保持拋光漿之一致性。分 政孩拋光漿之後,關閉閥42,水沖洗經過混合槽36及循環 &線47。之後,開啓排水閥52,而混合槽36及循環管線 之内容物沖至排水口。 使用目前含水拋光漿所使用之方法,若該拋光漿係爲雙 組伤系統,則含有固體之組份一般需預先混合,使得在分 散於日槽之前,再將該固體分散於該容器中。若未進行此 項動作,則最終混合物中之固體的重量百分比不正確。相 同地,孫第二組份應預先混合,以在輸送至日槽或拋光系 統足可先使孩溶液均質化。除了在部分濃縮系統中計量水 之外,此兩組份通常皆需要某些類型之計量,或藉重量或 藉骨豆知。此合物需經過遽以自該操作移除任何污染物。 本發明中,軚佳係不需要預先混合,因爲不涉及沉降或 安定性之問題。較佳係經由粉末進料48導入預先包裝之乾 -14- 本紙張尺度適用中國國家標準(CNS ) Μ規格(210X297公羡) --------0·^------1T----- (請先閲讀背面之注意事項再填寫本頁) 516989 A7 B7 五、發明説明( 12 燥顆粒固體組合物。或嗜妒 飞S乾I顆粒固體組合物 重(或針對各個大小之日枰而褚生《去w 14、,'工% ㈡彳日而預先稱重)或倒入或離析至本 ---------0·^ ! (請先閲讀背面之注意事項再填寫本頁) 有正確量之水㈣合槽36中,並混合。此外,可在混人ς 程中添加其他化學品諸如過氧化氫及有機化合物等。:有 機化合物可包括界面活性劑、鉗合劑、弱酸、殺生物劑 等。 確^吕熟習此技藝者可使用前、 / π斤』則又描逑在取无分的情況下進 ’亍本發明。因此’以下枯7金余、> Α丨仲ΠΟ 符毛貝犯例僅用以説明而非限制本 發明揭示。 貫施例1 訂 t 製備積體電路應用中針對拋光銅而調配之拋光漿。該抛 光漿一般在單一組份拋光漿下具有極短之適用期,而在雙 組份拋光漿下僅具有短適用期(數週),因爲數個組份彼此反 應。另一種組份於液體形式下係感光性。該拋光漿之乾燥 因爲數種鹽係爲銨鹽且易因熱分解·而更爲複雜。 該拋光漿可製備成“2x濃縮物,,以利於噴乾操作。“2x濃縮 物係爲固體及溶解固體各濃縮爲一般使用於拋光之漿液的 兩倍之拋光聚。預先經乾燥之拋光漿具有以下組成_· 經濟部中央標準局員工消費合作社印製 磷酸: 11.2 0/0 鱗8 5 % 過硫fe録·· 8 5 % 有機腐飯抑制劑: 0.3% 二氧化鈇 9.9% D.I.水 餘量 -15- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 516989 A7 B7 五、發明説明(u) I 〇 該成分經混合,使用Hill轉子定子混合器分散至該槽中之 溫度升高約1 〇°C。在約三日内,部分混合物於具有電動空 氣加熱器、旋轉霧化器、及具有變速馬達之螺動進料泵之 APV實驗室噴乾器中噴乾。自乾燥器及旋風分離器之底部 收集經乾燥之粉末。霧化器經調整以防止產物黏著於乾操 器之邊壁,入口空氣溫度及進料速率係調整至得到出口空 氣溫度係約80°C至約85°C。該粉末係密封於塑料袋中,以 待進一步處理。其餘拋光漿儲存以液體形式於密封容器中 ,以待進一步處理。 噴乾試驗之細節係列示於下表1中。該試驗係使用不同之 乾燥器條件進行。 表1 試驗 入口溫度 (。〇 出口溫度 (。〇 進料速率 (毫升/分鐘) 霧化器速度 (rpm) I 250-260 80-85 130 49000 II 180-185 80-85 65 41000 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 該兩試驗表示操作該乾燥器之兩個不同入口溫度,以決 定入口溫度對於揮發性或感熱性組份之分解是否具有影響 。發現在兩個入口溫度之粉末物性或重組拋光漿之拋光性 能之間不具有統計上明顯之差異。拋光漿之物性結果亦列 示於下表2。以下實施例係使用重組試驗I及試驗II粉末之拋 光試驗。 本發明偵測可用性之方式係主要活性成份--過硫酸銨--於 該拋光漿中之分析測定。此組份在含水狀態下同時對熱及 對光敏感。該兩種乾燥拋光漿及其所進行分析之濃縮物係 於進行噴乾之後一週進行分析。結果係列示於下表2中。所 -16- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐)、 1T 镛 -11-516989 V. Description of the invention (Dry powder printed and delivered by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs is sent to produce large quantities. Dry at the end pt. Collect the dry powder here, similar to the device in the dry collection Large double-circle cone blender 26 or mixed with dry materials, individually changed two "powder f batches are uniform. By force >. The amount of material can be much greater than the liquid equivalent 'because the weight of water is 75%; ^ The main π, a ... and the limbs have been removed from the concentrate. Uniform high-volume is particularly important for the semiconductor industry. A-^, .. must be tested or quality measured before use of a batch of new materials. : The preparation of the dried granular solid composition is completed. The dried granules are packed in any suitable type of container, such as a barrel lined with plastic fibers, a seven-day-old girl, and塑料 A paper bag with plastic. It is expected that the container size is equal to the amount of the dry particulate solid composition 'easy to reconstitute for various polishing effects. According to the present invention, the dry particulate solid composition can be packed in various packaging sizes The package size depends on the dry granular solid composition. For example, the dry granular solid composition can be packaged in a single use in terms of the amount of polishing slurry used to polish a single work piece or a few work pieces at a time. In package 27. For the polishing of larger batches of work pieces, batch package 28 can be used to store the dry granular solid composition, while in several batches, the dry granular solid composition is filled in the evening batch package 29. Borrow Packing the dried granular solid composition in a package size for polishing a specific amount of work 'can be polished under the optimal amount of polishing slurry. It is' the quality of the polishing method can be improved, and the total cost of the polishing method can be reduced The dry granular solid composition can be carried out in the illustrated mixing unit 30 ~ group 'as shown in the flow chart of Figure 3. The equipment includes the introduction of the measured amount to remove the most loaded component and the re-detachment --- -φά ------ IT ----- MW, (Please read the notes on the back before filling out this page) 12- This paper size applies to China National Standard (CNS) A4 specification (2 丨 〇X 297) Chu) 516989 Α7 Β7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (10) The water 32 and powder polishing slurry 34 are mixed in the mixing tank 36. The mixing unit 30 includes a high-speed rotor stator placed vertically in the mixing tank 36 38. High-speed rotor stator 38 can provide extremely high shear. After proper mixing of the reconstituted polishing slurry (usually determined by how much energy is consumed per product added), the reorganized polishing slurry is pumped from the reorganization equipment through a sub-micron filter The system 40, and then reach the polishing system or enter the sun trough (not without). The reconstituted polishing slurry can be circulated from this sun trough and used by the end user in the polishing method. Heat is known to those skilled in the art. The polishing slurry system performs several modifications. For example, the capacity of the mixing tank 36 may be from about liters to about 10 liters. In addition, the mixing unit 30 can be a stand-alone system or a system component of a polishing device. In addition-in the alternative, the mouthpiece unit 30 can be constructed to convey a stable amount of reconstituted polishing slurry, the rate of which is the same as the consumption rate of the combined polishing device, and the polishing rate is about, for example, about each work piece. 5 liters to about 15 liters. In another alternative, the dry granular solid composition may be fed directly into the mixing tank 36 in the form of pellets or mirrors, or the pellets may be ground or used as a powder polishing slurry 34. Therefore, the mixing unit 30 is the only example of various equipment structures that can reconstitute the dry granular solid composition of the present invention. w 入 '月 (In the reorganization method carried out with the conventional example, the mixing tank 36 is filled with deionized water 32, off _42 and on _. It is intended to be used for a single charge. // (,, .. heart water Or, water can be used to recombine the cycle time and slowly add a trick. Mountain and soil, a small part of the water is introduced into the mix, then the reorganization is started to start the rotor stator 38. At the dry rate Into the water, a certain amount! ... Under the speed sheep, hunted by the powder feeder, 'Carcass composition 34 leads into the circulation line 47. Polish the side and combine the pulp --------- -------, 玎 ----- (Please read the notes on the back before filling out this page) W scale applies -13- Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ^ 16989 A7 —___ B7 5 , ^^ --- 11 The circulation system through the circulation line 47 is continued until the required polishing slurry concentration and viscosity are obtained. The detection system 50 continuously analyzes the physical properties and chemical properties of the polishing slurry, such as the percentage of solid I, and ρΗ, etc. Although the detection system shown is not connected to the mixing tank 36, the detection function can also be performed at a certain point of the circulation line 47. The polishing slurry of the product is closed by the rotor stator 38 and the valve 4 2 is opened to convey a predetermined amount of the reorganized polishing slurry through the filter system 40. Depending on the specific application, the reorganized polishing slurry is delivered to the sun trough, or directly To the mouthpiece of the polishing device. In another alternative embodiment, the tank can be used as a mixing and dispersing state. During the polishing slurry transport, the recombination pump 46 can be kept active, for example, by preventing the solids in the mixing tank 36 from settling, In order to maintain the consistency of the polishing slurry. After polishing the slurry, the valve 42 is closed, and water is washed through the mixing tank 36 and the circulation & line 47. After that, the drain valve 52 is opened, and the contents of the mixing tank 36 and the circulation pipeline are flushed. To the drain. Using the current method of aqueous polishing slurry, if the polishing slurry is a dual-group wound system, the components containing solids generally need to be mixed in advance, so that the solids are dispersed in In the container. If this action is not performed, the weight percentage of solids in the final mixture is incorrect. Similarly, the second component of Sun should be pre-mixed in order to transport it to the day tank or polishing system. First homogenize the solution. In addition to metering water in a partially concentrated system, these two components usually require some type of metering, or by weight or by bones. This composition needs to be processed to do so. Remove any contaminants. In the present invention, 軚 Jia series does not need to be mixed in advance, because it does not involve sedimentation or stability issues. It is better to introduce pre-packaged dry via powder feed 48-14. This paper size applies to China Standard (CNS) M specifications (210X297 public envy) -------- 0 · ^ ------ 1T ----- (Please read the precautions on the back before filling this page) 516989 A7 B7 V. Description of the invention (12 Dry granular solid composition. Or envy Fei S dry I granule solid composition weight (or Chu Sheng "go to w 14 ,," work% for the next day and weighed in advance for each size) or poured or isolated to this --- ------ 0 · ^! (Please read the precautions on the back before filling this page) Have the correct amount of water in the mixing tank 36 and mix. In addition, other chemicals such as hydrogen peroxide and organic compounds can be added during the mixing process. : Organic compounds can include surfactants, clamps, weak acids, biocides, etc. It is true that those skilled in the art can use this technique before / / π Jin "and then describes the invention without taking any points. Therefore, the following cases of "7 gold and more than gold", and Α 丨 仲 ΠΟ Fu Maobei's crimes are only used to illustrate rather than limit the disclosure of the present invention. Example 1 is used to prepare a polishing slurry prepared for polishing copper in integrated circuit applications. The polishing slurry generally has a very short pot life under a single-component polishing slurry, while it has only a short pot life (several weeks) under a two-component polishing slurry because several components react with each other. The other component is photosensitive in liquid form. The drying of this polishing slurry is more complicated because several salts are ammonium salts and are easily decomposed by heat. The polishing slurry can be prepared into a "2x concentrate to facilitate spray-drying operations." "2x concentrates are solids and dissolved solids are each concentrated to twice the amount of polishing polymer typically used for polishing. The pre-dried polishing slurry has the following composition: • Phosphoric acid is printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs: 11.2 0/0 Scale 8 5% Persulfur Fe Record · 8 5% Organic Rotten Rice Inhibitor: 0.3% Dioxide鈇 9.9% DI water balance -15- This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) 516989 A7 B7 V. Description of the invention (u) I 〇 This component is mixed, using Hill rotor stator mixer The temperature dispersed into the tank increased by about 10 ° C. Within about three days, part of the mixture was spray-dried in an APV laboratory spray dryer with an electric air heater, a rotary atomizer, and a screw feed pump with a variable speed motor. Collect the dried powder from the bottom of the dryer and cyclone. The atomizer is adjusted to prevent the product from sticking to the side wall of the dryer. The inlet air temperature and feed rate are adjusted to obtain an outlet air temperature of about 80 ° C to about 85 ° C. The powder is sealed in a plastic bag for further processing. The rest of the polishing slurry is stored in liquid form in sealed containers for further processing. The detailed series of spray-drying tests are shown in Table 1 below. The test was performed using different dryer conditions. Table 1 Test inlet temperature (.o outlet temperature (.o) feed rate (ml / min) atomizer speed (rpm) I 250-260 80-85 130 49000 II 180-185 80-85 65 41000 Central standard of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperative (please read the precautions on the back before filling out this page). The two tests indicate that the two different inlet temperatures of the dryer are operated to determine whether the inlet temperature has any effect on the decomposition of volatile or thermosensitive components. It is found that there is no statistically significant difference between the powder physical properties of two inlet temperatures or the polishing performance of the reconstituted polishing slurry. The results of the physical properties of the polishing slurry are also shown in Table 2 below. The following examples use reorganization test I and Test II Polishing test of powder. The method for detecting usability of the present invention is the analysis and determination of the main active ingredient-ammonium persulfate-in the polishing slurry. This component is sensitive to heat and light at the same time in a water-containing state. The two types of dry polishing slurry and their analyzed concentrates were analyzed one week after spray drying. The series of results are shown in Table 2 below. So-16- This paper size applies to Chinese national standards (CNS) A4 size (210X 297 mm)
~~~Τ~~7~~~ ~;-— 表2所列之數據顯示噴乾保留最不^ 516989 五、發明説明( 有濃度皆爲即時可用之濃度 —"硫酸 重組試 經稀釋之液 態濃縮物 10日久— 卽估/·制* 1 不^疋化學組份之效果0 P使在1十日内,單份拋光漿 应、私、 辰、、傾物中氧化組份一過硫酸 銨足強度仍降低。 由表2中之數據可見過硫酸鹽濃縮物不以口溫度增高而 改變,而實際上保持其於原始組合物中所需之狀態。兩種 乾_之粒徑實際上回復至其在乾燥操作以前之狀態。 该預先乾燥濃縮物及兩個重組試驗拋光漿之粒徑分佈的 比較圖示係表示於圖4中。此三種材料極爲接近,故三種分 佈似爲同一個。 噴乾後TT週,於預先乾燥拋光漿濃縮物上進行拋光試驗 及銅拋光漿足乾燥拋光漿試樣試驗〗。三種拋光漿之最終濃 度係調整至以下水平: .—------ίτ-----^w, (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 磷酸: 磷酸銨 過硫酸按: 有機腐银抑制 二氧化鈦 去離子水 劑 5.6 % 4.3 % 4.3 % 0.15 % 4.9 % 餘量 -17 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 516989 A7 B7 五、發明説明(u ) 15 量出喷乾之拋光漿,以得到前述濃度,分散於Hill轉子定 子混合器中,直至d T係爲10 °C。殘留六週久之濃度拋光 漿於約1份濃縮物對1份水的情況下稀釋,得到前述實際濃 度,使用螺旋槳式混合器混合。所有拋光漿皆經1微米袋滤 器過濾。 六英吋直徑銅膜晶圓使用Strasbaugh 6EC晶圓拋光器 (Strasbaugh,San Luis Obispo,CA)以各三份拋光漿於相同拋 光參數下拋光。亦拋光二氧化石夕膜晶圓,以於銅及二氧化 矽間建立已知爲氧化物選擇性的相對拋光速率。此等試驗 之結果係出示於表3中。拋光速率係以每分鐘之埃數列示 (A/min): _ 表3 ----i-1------訂 (請先閲讀背面之注意事項再填寫本頁) 拋光漿來源 預先乾燥濃縮物 稀釋至使用濃度 噴乾之重組拋光漿 #1 銅移除速率 2200 A/min 7049 A/min 對氧化物之選擇Ί 26:1 Cu:氧化物速 率 63:1 Cu:氧化物速 率 一 經濟部中央標準局員工消費合作社印製 銅拋光漿之典型移除速率係爲6000至7〇〇〇 A/min。六週 久之濃縮物在單一組份混合物的情況下大幅受損。而噴乾 之材料保留市售雙份型拋光漿的特性。 實施例2 蓟述試驗II之第二單噴乾材料係於乾燥後九週時在銅晶 圓拋光對照中測試。該試驗係作爲重組試驗π材料及剛混合 銅拋光漿之對照。該拋光係於基本上與前述方式相同之方 式下進行。兩拋光漿之濃度係調至前述使用濃度。拋光试 驗之結果係列示於下表4中: f -18- 本紙張尺度賴巾國國家標率(CNS ) A4規格( 516989 A7 B7 五 、發明説明( 16~~~ Τ ~~ 7 ~~~~; -— The data listed in Table 2 shows that spray-drying is the least retained ^ 516989 V. Description of the invention (the concentrations are all concentrations that are immediately available— " Liquid Concentrate for 10 Days — Calculate / make * 1 Do not 疋 效果 the effect of chemical components 0 P so that within 10 days, a single part of polishing slurry should be oxidized components, peroxic acid, pour sulfuric acid The strength of the ammonium foot is still reduced. From the data in Table 2, it can be seen that the persulfate concentrate does not change with the increase of the mouth temperature, but actually maintains the state it needs in the original composition. The particle sizes of the two dry particles are actually Return to its state before the drying operation. A comparison of the particle size distributions of the pre-dried concentrate and two reconstituted test polishing slurries is shown in Figure 4. These three materials are very close, so the three distributions appear to be the same TT week after spray-drying, the polishing test and copper polishing slurry dry polishing slurry sample test were performed on the pre-dried polishing slurry concentrate. The final concentration of the three polishing slurry was adjusted to the following levels: .----- -ίτ ----- ^ w, (Please read the notes on the back before filling in this ) Phosphoric acid printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs: Ammonium phosphate persulfate according to: Organic rot silver inhibits titanium dioxide deionized water agent 5.6% 4.3% 4.3% 0.15% 4.9% balance-17 This paper is in accordance with Chinese national standards ( CNS) A4 specification (210X297 mm) 516989 A7 B7 V. Description of the invention (u) 15 Measure out the sprayed polishing slurry to obtain the aforementioned concentration and disperse it in the Hill rotor stator mixer until d T is 10 ° C The remaining six-week-long concentration polishing slurry was diluted with about 1 part of concentrate to 1 part of water to obtain the actual concentration mentioned above, and mixed using a propeller mixer. All polishing slurry was filtered through a 1 micron bag filter. Six inches in diameter Copper film wafers were polished using the Strasbaugh 6EC wafer polisher (Strasbaugh, San Luis Obispo, CA) with each of the three polishing slurries under the same polishing parameters. The SiO2 film wafers were also polished for copper and silicon dioxide A relative polishing rate known as oxide selectivity was established. The results of these tests are shown in Table 3. The polishing rate is shown in Angstroms per minute (A / min): _ Table 3 ---- i -1--- --- Order (please read the precautions on the back before filling this page) Polishing slurry source Pre-dried concentrate diluted to use the reconstituted polishing slurry sprayed with concentration # 1 Copper removal rate 2200 A / min 7049 A / min for oxidation Choice of materials Ί 26: 1 Cu: oxide rate 63: 1 Cu: oxide rate-The typical removal rate of copper polishing pastes printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs is 6000 to 7000 A / min . The six-week long concentrate was significantly damaged in the case of a single component mixture. The spray-dried material retains the characteristics of a commercially available two-part polishing slurry. Example 2 The second single spray-dried material of thistle test II was tested in a copper crystal round polishing control at nine weeks after drying. This test was used as a comparison between the reorganized test π material and the freshly mixed copper polishing slurry. This polishing is performed in substantially the same manner as the foregoing. The concentration of the two polishing slurries was adjusted to the aforementioned concentration. The series of results of the polishing test are shown in Table 4 below: f -18- This paper is based on the national standard (CNS) A4 specification (516989 A7 B7 of the paper) 5. Description of the invention (16
新 =乾之重組拋光漿 表4 銅移除速率 6100 A/min 6600 A/min 性 對 3率6:1 Cu:氧❿勿 6玄6:1 Cu:氧化物速 率 亦所究此等晶圓之表面光澤。兩拋光漿間之表面刮磨顯 然攝明顯差異。 實施例3 此試驗係使用Niro Mobile Minor Ή型噴乾器。此乾严哭 係於與前述實施例相同之方式下操作。此試驗中之抛光蒙 係用於拋光鎢。此試驗所使用之拋光漿係爲具有以下成份 之即時可用調配物: 竣酸 3 % 幾酸鹽 0.3 % 氧化組份 6 % 研磨劑 9 % 去離子水 餘量 製備此拋光漿之濃縮物以供噴乾, 之;辰度成爲兩倍。該濃縮物係於數個 使該化學及研磨組份 出口溫度値下噴乾, 以測足羧酸組份之降解度(若有)。該出口溫度係藉著改變濃 縮物之進料速率並使所有其他參數保持定値而變化。 經濟部中央標準局員工消費合作社印製 該乾燥可流動粉末重組成前述即使可甩之拋光漿組合物 ,用以拋光嫣晶圓及熱氧化物膜晶圓。用以製造粉末之原 始濃縮物的一部分亦稀釋成即時可用之濃度,而作爲基線 -19- 本紙張尺度適用中國國家標準(CNS ) Α4規格(2ί0χ297公釐) 516989 經濟部中央標準局員工消費合作社印製 A7 五、發明説明() 17 。下表6列示噴乾及拋光試驗之結果: 表5 鶴速率 對氧化物乏搜搭;Μ: 自噴乾過程稀釋之 濃縮物 2344 A/min 416:1 """""^ 剛製得之拋光漿 2177 A/min 3 86ΤΪ~^----^ 重組噴乾粉末 2328 A/min ~3ΐ^ΤΓ~ 一 孩氧化物膜晶圓之表面在拋光後之顯微鏡檢測顯示任何 試驗晶圓間之刮磨皆無差異。 實施例4 使用標準混合過程及本發明所製備之相同拋光組合物進 行數個測试,以比較習用製備之嫣拋光組合物(稱爲w 2000”)之拋光活性。測量經拋光之晶圓的薄膜移除速率、 選擇性、表面糙度及缺陷形成。 知到一組200毫米測試晶圓,各具有5〇〇〇埃而覆蓋晶圓表 面足熱氧化物基層,及藉500埃氮化鈦層與熱氧化物隔離的 8000埃鎢層。 製備用以拋光試驗組晶圓時,將R〇del,Inc.(Newark,DE) 之拋光墊IC-1400 K裝置於備有Rare Eanh Sciences,New = dry reorganized polishing slurry Table 4 Copper removal rate 6100 A / min 6600 A / min Sex ratio 3 ratio 6: 1 Cu: Oxygen 6: 1 Cu: Oxide rate is also studied for these wafers Surface gloss. The surface scraping between the two polishing slurries is obviously different. Example 3 This test was performed using a Niro Mobile Minor (R) -type spray dryer. This operation is performed in the same manner as in the previous embodiment. The polish used in this test was used to polish tungsten. The polishing slurry used in this test is a ready-to-use formulation with the following ingredients: 3% tribasic acid, 0.3% oxidizing component, 6% abrasive, 9% deionized water, and a concentrate of this polishing slurry for preparation. Spray dry, and; Chen degree has doubled. The concentrate was spray-dried at several temperatures that allowed the chemical and abrasive components to exit, to measure the degree of degradation of the carboxylic acid component, if any. The outlet temperature was changed by changing the feed rate of the concentrate and keeping all other parameters constant. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs This dry flowable powder is reconstituted into the aforementioned even-throwable polishing slurry composition for polishing wafers and thermal oxide film wafers. Part of the original concentrate used to make the powder is also diluted to a ready-to-use concentration, and as a baseline -19- This paper size applies the Chinese National Standard (CNS) Α4 specification (2ί0 × 297 mm) 516989 Staff Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Printing A7 V. Description of Invention () 17. The following Table 6 shows the results of spray drying and polishing tests: Table 5 Crane speed vs. oxide depletion; M: Concentrate diluted 2344 A / min 416: 1 diluted from spray drying process " " " " " ^ Freshly prepared polishing slurry 2177 A / min 3 86ΤΪ ~ ^ ---- ^ Reconstituted spray-dried powder 2328 A / min ~ 3ΐ ^ ΤΓ ~ Microscope inspection of the surface of a oxide film wafer after polishing shows any There was no difference in scraping between test wafers. Example 4 Several tests were performed using a standard mixing process and the same polishing composition prepared by the present invention to compare the polishing activity of a conventionally prepared Yan polishing composition (called w 2000 "). The polished wafers were measured for Film removal rate, selectivity, surface roughness, and defect formation. A set of 200 mm test wafers, each with 5000 angstroms, covering the surface of the wafer with a sufficient thermal oxide base layer, and 500 angstroms of titanium nitride were known. The layer is 8000 angstrom tungsten layer isolated from thermal oxide. When preparing wafers for the test group, the polishing pad IC-1400 K of Rodel, Inc. (Newark, DE) was equipped with Rare Eanh Sciences,
Inc.(從 月il之Newark,DE)之四英吋處理柵之Strasbaugh 6DS_sp拋光 系統 < 台板上。爲了處理該墊,使用去離子DI水淋洗進行 一十次處理前之清掃,處理五片模擬氧化物晶圓之後爲兩 片模擬鎢晶圓。 忒墊經初次處理之後,拋光一組十三片2〇〇毫米試驗晶圓 。3 4驗係藉著先使用習用製備拋光漿拋光一組四片對照 試驗晶圓,之後使用依本發明重組之拋光漿拋光一組五片 -20 - 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇xl^i^ ---------0·^—-----IT----- (請先閲讀背面之注意事項再填寫本頁) 516989 A7 B7 18 五、發明説明 試驗晶圓而進行。最後,使用習用製備之拋光漿拋光第二 組四片對照試驗晶圓。爲幫助確定位於拋光墊表面上之拋 光漿不會自一組夾帶至後一組,於進續組之間處理兩片模 擬氧化物。 各個試驗中係使用以下拋光墊處理及拋光條件: 拋光: 向下力:7碎每平方英忖 背向壓力:0镑每平方英吋 台板速度:60 rpm 載體速度:60 rpm 溫度:100 F 試驗結果列示於下表6中 化物(Tox)薄膜之移除速率 (請先閲讀背面之注意事項再填寫本頁) 拋光墊處理: 向下力:14碡 清掃:2(DI水後) 台板速度:70 rpm 盤速:75 rpm RR”係爲鎢(W)、鈦(Ti)及氧 以埃每分鐘表示。該薄膜層之 移除速率係使用SM-300薄膜測量工具(KLA_Tencor, F r e m ο n t ’ C A)測足。弟'一、弟二及弟二組試驗晶圓之平均 移除速率係列示於標記Avg.W,Avg Ti及Avg Tox之欄中。標 有“-Recon”之試驗晶圓係使用本發明所製備之重組拋光漿 拋光,而其餘試驗晶圓係使用習用拋光浆拋光。 經濟部中央標準局員工消費合作社印製 表6 拋光漿 RRW Avg W RR Ti Avg Ti RR Tox Avg Tox MSW2000 2108 110 MSW2000 2312 109 MSW2000 2212 275 112 MSW2000 2338 2243 277 276 102 108 MSW2000 -Recon 2176 102 MSW2000 -Recon 2183 115 21 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 516989 7 Β 五、發明説明(19 ) MSW2000 - Recon 2193 120 MSW2000 -Recon 2201 334 120 MSW2000 -Recon 2286 2208 361 348 114 MSW2000 2266 119 MSW2000 2280 118 MSW2000 2306 297 119 MSW2000 233 1 2296 305 301 123 120 爲測定習用及重組拋光漿之間的表面糙度特性的任何差 異,六個試驗晶圓使用四乙基原矽烷(TEOS)沉積塗佈以二 氧化矽,之後拋光。該試驗方法係與前述者相同。每次試 驗之後,皆使用原子力顯微鏡(型號5000,Digital Instruments, Inc., Sant a Barbara,C A)進行表面糖度測試。下 表7列示糙度値,其中“Rms”係爲表面趁度之均方根値,以 毫微米計: ----------- (請先閱讀背面之注意事項再填寫本頁) 訂 表7 拋光漿 Rms(毫微米) MSW2000 0.530 MSW2000 0.542 MSW2000-Recon 0.537 MSW2000-Recon 0.600 MSW2000 0.526 MSW2000 0.558 表6所列之移除速率數據及表7所列之表面糙度數據顯示 嘹 經濟部中央標準局員工消費合作社印製 重組拋光漿及習用拋光漿之間的拋光性能無明顯差異。 因此,顯然已揭示一種使用完全提供前述優點之重組乾 燥顆粒抛光組合物的抛光方法。雖然前述實施例記錄本發 明化學機械拋光漿使用於積體電路之用途,但本發明仍可 應用於其他類型之調配物。例如,許多含有研磨劑及化學 -22- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) 516989 A7 B7 五、發明説明(2〇 ) 品一用以提供較高之移除速率或特定表面條件—之拋光調製 物可依相同方式乾燥,且於使用時重組。研磨漿諸如此等 係使用於拋光特用光學儀器,使用於拋光包括半導體基材 諸如秒及砷化鎵,使用於塑料眼鏡及隱形眼鏡及其他類似 技術。是故,所有該等變化及修飾皆包括於申請專利範圍 及其同等範圍内。 --------Awl 1T (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 -23- 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)Inc. (from Newark, DE, Newark, DE). Strasbaugh 6DS_sp polishing system for four-inch processing grid < platen. To process the pad, rinse with deionized DI water for ten times before processing, and then process two simulated oxide wafers into two simulated tungsten wafers. After the pad was initially processed, a set of 13 200 mm test wafers was polished. 3 4 The inspection system uses a conventional preparation of polishing slurry to polish a set of four control test wafers, and then uses a polishing slurry reconstituted according to the present invention to polish a set of five pieces. -20-This paper size applies to Chinese National Standard (CNS) A4 Specifications (21〇xl ^ i ^ --------- 0 · ^ —----- IT ----- (Please read the precautions on the back before filling this page) 516989 A7 B7 18 5 The invention is carried out on test wafers. Finally, a second set of four control test wafers is polished using a conventionally prepared polishing slurry. To help determine that the polishing slurry on the surface of the polishing pad will not be carried from one group to the next, Two simulated oxides were processed between the successive groups. The following polishing pad treatment and polishing conditions were used in each test: Polishing: downward force: 7 pieces per square inch 忖 back pressure: 0 pounds per square inch platen Speed: 60 rpm Carrier speed: 60 rpm Temperature: 100 F The test results are listed in Table 6 below. Tox film removal rate (please read the precautions on the back before filling this page). Polishing pad treatment: down Force: 14 碡 Cleaning: 2 (after DI water) Platen speed: 70 rpm Disk speed: 75 rpm RR It is tungsten (W), titanium (Ti), and oxygen expressed in Angstroms per minute. The removal rate of the thin film layer is measured using a SM-300 thin film measurement tool (KLA_Tencor, Frem nt 'CA). Brother' a The average removal rate series of the second, second, and second test wafers are shown in the columns labeled Avg.W, Avg Ti, and Avg Tox. The test wafers marked with "-Recon" are reconstituted using the present invention The polishing slurry was polished, while the remaining test wafers were polished using conventional polishing slurry. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economy Table 6 Polishing slurry RRW Avg W RR Ti Avg Ti RR Tox Avg Tox MSW2000 2108 110 MSW2000 2312 109 MSW2000 2212 275 112 MSW2000 2338 2243 277 276 102 108 MSW2000 -Recon 2176 102 MSW2000 -Recon 2183 115 21-This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) 516989 7 Β V. Description of the invention (19) MSW2000-Recon 2193 120 MSW2000 -Recon 2201 334 120 MSW2000 -Recon 2286 2208 361 348 114 MSW2000 2266 119 MSW2000 2280 118 MSW2000 2306 297 119 MSW2000 233 1 2296 305 301 123 120 To determine any differences in surface roughness characteristics between conventional and reconstituted polishing slurries, six test wafers were coated with silicon dioxide using tetraethylorthosilane (TEOS) deposition and then polished. This test method is the same as the foregoing. After each test, an atomic force microscope (Model 5000, Digital Instruments, Inc., Sant a Barbara, CA) was used to perform the surface sugar test. Table 7 below lists the roughness 値, where “Rms” is the root mean square 値 of the surface, measured in nanometers: ----------- (Please read the precautions on the back before filling This page) Order Table 7 Polishing paste Rms (nm) MSW2000 0.530 MSW2000 0.542 MSW2000-Recon 0.537 MSW2000-Recon 0.600 MSW2000 0.526 MSW2000 0.558 The removal rate data listed in Table 6 and the surface roughness data listed in Table 7 are displayed. There is no significant difference in the polishing performance between the reorganized polishing slurry printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs and the conventional polishing slurry. Therefore, it has been apparent that a polishing method using a reconstituted dry particle polishing composition which completely provides the aforementioned advantages has been disclosed. Although the foregoing embodiment records the application of the chemical mechanical polishing slurry of the present invention to integrated circuits, the present invention can still be applied to other types of formulations. For example, many papers containing abrasives and chemicals-22- This paper is sized to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 516989 A7 B7 V. Description of the invention (2) Product 1 is used to provide a higher removal rate Or a specific surface condition-the polishing preparation can be dried in the same way and reconstituted when used. Grinding slurries are used for polishing special optical instruments, polishing semiconductor substrates such as sec and gallium arsenide, plastic lenses and contact lenses, and other similar technologies. Therefore, all such changes and modifications are included in the scope of patent applications and their equivalents. -------- Awl 1T (Please read the notes on the back before filling out this page) Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs-23- This paper size applies to China National Standard (CNS) A4 specifications ( 210X297 mm)
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW90109446A TW516989B (en) | 2000-04-19 | 2001-06-27 | Polishing method using a reconstituted dry particulate polishing composition |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW516989B (en) |
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2001
- 2001-06-27 TW TW90109446A patent/TW516989B/en not_active IP Right Cessation
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