經濟部智慧財產局員工消費合作社印製 ---------B7 五、發明說明（） 、 --* 領域： 本發月係與基材上膜層的沉積相關；更特定說來， 本發明係關於介兩爲在冬凰w 兒層在至屬〉儿積之前的蝕刻及清洗。 背景l 化由於知體電路中特徵區遂漸縮小，復加以多層金屬 的趨勢日盛，因此低介電常數膜層的提供變得格外重 要。 低〃丨迅、吊數膜對於内金屬介電層（IMD)來說是特別需要 勺Q為其此降低被覆蓋之内金屬連線的RC時間常數延 遲，以避免不同金屬層間的串音（cr〇sstalk)，並進而降低 元件的功率損耗。 半/人微米多層金屬堪稱為下一代超大型積體電路之 關键技術而多層内連接技術就深居該技術的核心地 位，因其需要對高深寬比之特徵區（如插塞及其它内連接） 加以平坦化’ @這些内連接形成的可#度對於未來的超 大型積體電路、往後致力於電路密度增加及各個基材（及 曰口片）ρα質來說確實有著舉足輕重的影響。 傳、、克之化學氣相沉積（CVD)及物理氣相沉積（pVD)技 術常用來將導電性材料沉積至基材上的接觸洞、介層 孔、溝渠或其它特徵區之内，但這時會有一個很大的問 題存在其中，那就是由於接觸洞或其它特徵區通常都有 高深寬比（亦即洞之高度比上寬度或直徑的值大於1}，而 孔洞的深寬比又因技術進步所形成之更靠近的特徵區而 第3頁 ---ί------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4 « (210 X 297 ) 512448 A7 B7 五、發明說明（ 濟 部 智 慧 財 產 局 員 工 消 費 變得更大。 小特徵區中自然氧化物及並 使得沉積於特徵區裡的金 =物的存在通常會 佈所致。自然氧化物通常二?料變得較不均勻分 而生成，而之所以會曝至氧 虱承境下 克下疋因基材於空#i援培 下在製程室間移動、少量氧切 、孔衣兄 接總 +猛π + 田在真空罜内而與晶圓/膜層 接觸、或層腠在蝕刻時遭 、一、九^ τ 、致万染所致。而特徵區内其 5染物則可能是來自於氧化 m , 虱化物過度蝕刻時所帶來的被 擊材料、帶化製程所帶來 、， &餘九阻、珂波氧化物蝕 步驟所帶來的殘餘碳氫或氟 贶化奴虱聚合物、或是預清 濺鍍蝕刻製程所帶來的再 、 、一、 丹和材枓。這些自然氧與其 污染物會在基材上形成與層 曰版 < 成長相互干擾的區域 因此層膜的成長就受到阻礙， 、， 、 而成長增加的區域會互 接觸而併作一塊，並因此封 、 口此封住小特徵區，因此待沉積 材料就不能填入被封住的區域内。 自然氧與其它污染物的存在同時會增加介層孔 觸洞的阻抗、並會降低小特徵區的電致遷移阻抗，立 污染物會擴散進入介電層、子層或沉積之金屬中，並 β此使侍7C件（包含小特徵區）的特性改變。雖然污染物 被限制於特徵區内的-薄邊界區域内，但該薄邊界區 卻佔去該小特徵區的相當大部份，所以特徵區内冷染 的可接受程度會隨著特徵區寬度的減小而變小，其中 述之薄邊界區域係位於沉積金屬及底層導電或半導電 它 濺 洗 它 /接 中 能 可 物 上 I 只 本紙張尺度適用中關家標準（CNS)A4規格⑵Q_x挪公着Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs --------- B7 V. Description of Invention (),-* Field: This month is related to the deposition of the film layer on the substrate; more specifically The present invention relates to the etching and cleaning of the two layers before the winter phoenix layer. Background As the characteristic area in the body circuit is gradually shrinking, and the trend of adding multiple layers of metal is flourishing, the provision of a low dielectric constant film layer becomes particularly important. Low-speed and high-speed films are especially necessary for the inner metal dielectric layer (IMD) to reduce the RC time constant delay of the covered inner metal lines to avoid crosstalk between different metal layers ( crOsstalk), and further reduce the power loss of the component. The half / human micron multilayer metal can be called the key technology of the next-generation ultra-large integrated circuit, and the multilayer interconnection technology has taken the core position of the technology because it requires high-aspect-ratio characteristic areas (such as plugs and other (Internal connection) Flattening @ These internal connections can be of great significance for future ultra-large integrated circuits, future efforts to increase circuit density, and the substrate (and mouthpiece) ρα quality. influences. Chemical vapor deposition (CVD) and physical vapor deposition (pVD) techniques are commonly used to deposit conductive materials into contact holes, vias, trenches, or other feature areas on the substrate. There is a big problem, which is because the contact hole or other characteristic areas usually have a high aspect ratio (that is, the height of the hole is greater than the width or diameter value greater than 1), and the aspect ratio of the hole is due to technology. The closer feature area formed by progress and page 3 --- --- --- order ------- (Please read the back first Note: Please fill in this page again.) This paper size applies Chinese National Standard (CNS) A4 «(210 X 297) 512448 A7 B7. V. Description of the invention The presence of oxides and gold deposits deposited in the characteristic area is usually caused by the distribution of natural oxides. Generally, the materials become more heterogeneous and are formed, and they are exposed to oxygen lice. The lower part of the substrate is moved between the process chambers with a small amount of oxygen, and a small amount of oxygen is cut. It is in a vacuum chamber and is in contact with the wafer / film layer, or the layer chamber is damaged by etching, one, nine, ^ τ, or all dyes. The 5 dyes in the characteristic area may be from the oxidation of m, lice The material to be attacked during over-etching, brought by the stripping process, & Yu Jiuzhan, residual hydrocarbons or fluorinated slave lice polymers brought by the Kobo oxide etching step, or The sputtering, etching, and other materials brought by the etching process. These natural oxygen and its pollutants will form areas on the substrate that interfere with the layer growth. Therefore, the growth of the layer film is hindered. The areas where the growth has increased will contact each other and become a piece, so the small feature areas are sealed and sealed, so the material to be deposited cannot be filled in the sealed area. Natural oxygen and other pollutants At the same time, the resistance of the interlayer pores and holes will be increased, and the electromigration resistance of the small feature area will be reduced. Contaminants will diffuse into the dielectric layer, the sublayer or the deposited metal. (Including small feature areas). The dye is limited to the thin boundary area in the feature area, but the thin boundary area occupies a considerable part of the small feature area, so the acceptable degree of cold dyeing in the feature area decreases with the width of the feature area. Small and small, the thin boundary area mentioned above is located on the deposited metal and the bottom layer is conductive or semi-conductive. It splashes on it / connects to the cocoa I. This paper size is applicable to the Zhongguanjia Standard (CNS) A4 specification ⑵Q_x 诺 公With
I A7 五、 發明 B7 說明（ 徵區之介面處。 利用濺鍍蝕刻方法來對特一 特徵區或小特徵區（深寬比小於^订預洗是降低大 方法，不過濺鍍蚀刻法卻會因，夕亏染物的一有效 ^霄肢扣擊及濺鍍沉積、與金屬予屉 』土 積對祛舛π / f r 、 ㈢㈠叙或銅）之錢鍍沉 f 來戈二:"的撞擊而對碎層產生破壞。以大特徵區 “，濺鍵触刻法通常會將特徵區内的冷染物量降至可 :又的程度；但對具高深寬比之小特徵區而言，濺鍍蝕 刻法對於特徵區污染物的去除卻仍不見很大的效果，故 其會降低所形成之元件的性能。 。利用濺鍍蝕刻法進行預清洗對於外表曝有銅的特徵 區而S格外適用，其中銅很容易擴散進入介電層（包含介 電層中的孔側壁），進而毁壞介電層的完整性，這對 T E 0 S、熱氧化物及低κ值介電材料而言尤其如此。所以， 在銅的預清洗上勢必需要有一新預清洗方法的提出。 經濟部智慧財產局員工消費合作社印製 觸 12 矽 觸 使 請參閱第1圖。圖中顯示一基材丨〇，其包含一接 洞1 1 ’而該接觸洞n就形成於一電性絕緣或介電層 之内’這種介電層可以是如所示之二氧化石夕或氮化 層。想要將一均勻之含金屬層沉積進入高深寬比之接 洞1 1中是很困難的，因為洞之側壁14上的污染物會 含金屬層的沉積更不均勻。該含金屬層最後會將整個 之寬度部份覆蓋住，而使得金屬層内仍留有未填滿的 份，於是就有空洞及含金屬材料的不連續性存於該 中。之後，圍繞孔洞之金屬原子的高移動性會使得金 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 、發明說明（ 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 原子擴散進入空洞之矣& ^ 面區域，該空洞的表面區域便會 減小，如此便使得所 斤形成的洞如第1圖所示之圓形，這 些空洞及不連續性會# 曰便件電性接觸品質變差，並使其變 得不可靠。 預用洗王要是屬於一種賤擊蚀刻的形式，其中污染 由基材處被成擊，更以能通入一惰性氣體（一般為氨; 反尤孔(般為氫）之混合物為佳。氬及氫之混合物能 移除反應及非反應疗染物，也可用來對接觸洞、介層孔、 溝渠及其它特徵區修改形狀，以有利於後續金屬沉積步 驟的進行。在預清洗混合物中增加其㈣氬含量可以使 預清洗的姓刻速率相對增加，更能使預清洗之姓刻不 勾性減低。在預清洗混合物中加入氫則是為了有效將 應化合物或万染物(如銅之氧化物及碳氫化物)加以 除：較諸單單以氬來進行預清洗動作，以氬及任何含 之氫所組成的混合物來對具特徵區之基材進行預清洗 得到的蝕刻速率較低，且蝕刻的均勻度較差。 種預π洗万法若具有高濃度之反應氣體及較佳 姓刻速率，那麼其也就大致能因反應氣體的加入而提 對污染物的移除能力。 在Zhao et al.提出的美國專利案5,66〇 682中提到利 用包含氫及氬之電漿來對具特徵區之介電層進行敍刻 反應清洗的嘗試過程’其中氬從孔中將沉積物蝕刻， 氫則與剩餘之沉積物反應形成氣態副產物。這種蝕刻 清洗同時進行的結果確實改善了後續之金屬層的沉積 均 反 移 量 所 之 升 及 而 與 · --------tr--------- (請先閱讀背面之注意事項再填寫本頁) 第6頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐 五、發明說明（ 但是氫與氬之雷难同去 包桌冋時處理卻不能避免在 屬層内留下空洞。 ％ /儿和之至 ，對於改善金屬層沉 區之介電層上的方法^ t e j 5在具特倣 約1.0之孔、洄式、、蕃、、巨 ’木寬比大於 或溝渠的介電層來說更是如此。 發明目的及: f 表面之二：我來說在提供一種提升金屬沉積於具特徵 ::厂上之填充能力及電性特性的方法，其中介電 層内的,ι層孔及溝渠等處被加以蝕刻，以增進埴充能力· 其並被清洗，以降低孔洞内的金屬氧化物。就、一：態來 說’本發明k供具特徵表面之介電層的清洗方法，其中清 :係在-製程室中進行，該製程室中並有一第一電漿，： 第私水至少包含氬主要氣體；及在一製程室中通入第二 私漿來對孩具特徵表面之介電層進行清洗的方法，其中該 第二電裝具有氫及氦。當蝕刻及清洗動作完成之後，孔洞 就以金屬加以填充，其中金屬可以沉積在一阻障層/薄層之 上’且兩清洗過程以在相同之製程室中進行為佳。 經濟部智慧財產局員工消費合作社印製 本發明同時提供一種在一製程室中以一第一電漿（包 含氬）來清洗具特徵表面之介電層的方法，其中該第一電 聚由加入射頻電漿電源於一感應線圈及加入射頻偏壓至 一基材支撐組件而產生，其中該感應線圈圍繞該製程室， 而該基材支撐組件用以支撐該基材。該具特徵表面之介電 層在製程室中利用一第二電漿加以清洗，其中該第二電漿 由氫及氦組成，並以增加提供至感應線圈之射頻電漿電 第7頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7I A7 V. Invention B7 Explanation (at the interface of the levy area. Sputter etching method is used to identify a special feature area or a small feature area (the aspect ratio is less than ^ order pre-washing is a large reduction method, but the sputter etching method will Because of this, an effective ^ stump slamming and spattering deposits, and metal deposits "soil deposits to remove 舛 π / fr, ㈢㈠, or copper) plating f. Damage to the fragmentation layer. With a large feature area, the splash key touch method usually reduces the amount of cold dye in the feature area to the extent that it can; but for small feature areas with high aspect ratios, splashing The plating and etching method still does not have a great effect on the removal of pollutants in the characteristic area, so it will reduce the performance of the formed elements. The pre-cleaning by sputtering etching method is particularly suitable for feature areas exposed to copper, and S is particularly suitable. Among them, copper can easily diffuse into the dielectric layer (including the sidewalls of the holes in the dielectric layer), thereby destroying the integrity of the dielectric layer, which is especially true for TE 0 S, thermal oxides and low-κ dielectric materials. . Therefore, a new pre-cleaning is necessary in the pre-cleaning of copper. Proposal of the method. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 12 Silicon touch. Please refer to Figure 1. The figure shows a substrate 丨 〇, which contains a hole 1 1 ', and the contact hole n is formed at Within an electrically insulating or dielectric layer 'This dielectric layer can be a diatom dioxide or nitride layer as shown. Want to deposit a uniform metal-containing layer into a high aspect ratio hole 1 1 It is very difficult because the pollutants on the sidewall 14 of the hole will deposit the metal-containing layer more unevenly. The metal-containing layer will eventually cover the entire width part, so that the metal layer remains unfilled. Full content, so there are discontinuities in voids and metal-containing materials. Later, the high mobility of the metal atoms surrounding the holes will make the gold paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7, invention description (printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the atomic diffusion into the cavity & ^ surface area, the surface area of the cavity will be reduced, so that the hole formed by The circles and discontinuities shown in Figure 1 will indicate that the electrical contact quality of the convenience parts will deteriorate and make them unreliable. If the pre-washed king is a form of base strike etching, the pollution is caused by The substrate is attacked, and a mixture of inert gas (generally ammonia; anti-porous (generally hydrogen)) can be used. The mixture of argon and hydrogen can remove reactive and non-reactive therapeutic dyes, and it can also be used. To modify the shape of the contact holes, interstitial holes, trenches and other characteristic areas to facilitate the subsequent metal deposition step. Increasing the argon content in the pre-cleaning mixture can relatively increase the rate of pre-cleaning and engraving. Make the pre-cleaning last name less intangible. Adding hydrogen to the pre-cleaning mixture is to effectively remove the compounds or dyes (such as copper oxides and hydrocarbons): compared with argon alone In the cleaning operation, a mixture of argon and any hydrogen containing is used to pre-clean the substrate with the characteristic region to obtain a low etching rate and poor uniformity of etching. If this pre-π washing method has a high concentration of reaction gas and a better engraving rate, then it can roughly improve the ability to remove pollutants due to the addition of the reaction gas. In U.S. Patent 5,66,682, filed by Zhao et al., An attempt was made to use a plasma containing hydrogen and argon to perform a narrative reaction cleaning of a dielectric layer with a characteristic region. The deposits are etched, and hydrogen reacts with the remaining deposits to form gaseous by-products. The results of this simultaneous etching and cleaning have indeed improved the subsequent increase in the amount of back-shifting of the metal layer and -------- tr --------- (Please read first Note on the back, please fill in this page again) Page 6 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 5. Description of the invention It is unavoidable to leave voids in the metal layer.% / For the sake of improving the method on the dielectric layer of the metal layer sinking area ^ tej 5 in the hole with a special imitation about 1.0, 洄, 蕃, 蕃, 巨'This is especially true for dielectric layers with a wood width ratio greater than or in trenches. The purpose of the invention and: f Surface two: I am providing a method to enhance the metal deposition characteristics and: In the method, the holes and trenches in the dielectric layer are etched to improve the charge capacity and are cleaned to reduce the metal oxides in the holes. In the first aspect, the present invention k The method for cleaning the dielectric layer with a characteristic surface, wherein the cleaning is performed in a process chamber. The process chamber does not have a first plasma: the first private water contains at least the main gas of argon; and a method for cleaning the dielectric layer on the characteristic surface by passing a second private plasma into a process chamber, Erdenzo has hydrogen and helium. After the etching and cleaning operations are completed, the holes are filled with metal, where the metal can be deposited on a barrier layer / thin layer 'and the two cleaning processes are performed in the same process chamber. The invention is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs while providing a method for cleaning a dielectric layer having a characteristic surface with a first plasma (including argon) in a process chamber, wherein the first electrode The polymerization is generated by adding an RF plasma power source to an induction coil and adding an RF bias to a substrate supporting component, wherein the induction coil surrounds the process chamber, and the substrate supporting component is used to support the substrate. This feature The dielectric layer on the surface is cleaned by a second plasma in the process chamber, wherein the second plasma is composed of hydrogen and helium, and the radio frequency plasma electricity provided to the induction coil is increased. Applicable to China National Standard (CNS) A4 (210 X 297 mm) A7
512448 五、發明說明（） 源、及降低加至該基材支撐組件的射頻偏壓而產生，其中 該感應線圈圍繞該製程室，而該基材支撐組件用以支撐核 基材。 牙μ 一阻障層/薄層接著可被沉積於該具特徵表面之介電 層上’這步驟的進行是發生在介電層在曝至該第一電裝及 該第二電聚之後。接著，金屬層可以沉積在該阻障層之 上。此外’接下來的電漿處理可以在一整合製程順序所用 之各電漿處理室中進行，如預清洗室、物理氣相沉積室、 蝕刻室及其它電漿處理室等等。 圖式簡單說明： 本發明之上述及其它目的、特徵及優點可由下述詳 細說明並配合圖示之說明而更得以彰顯，其中上述所概 述之本發明的特定描述可逕行參考詳細說明中的特定實 施例，這些特定實施例則以所附之圖式配合說明。 但當了解的是所附之圖式僅用以說明本發明之典型 實施例，而非用以限定本發明之範圍，本發明仍可推衍 出其它不同但等效之實施例。 第1圖為一具圖案化之基材的部份剖面示意圖，其中顯 示一非平面之表面及一任意定向、具細微晶粒、表 面粗糙沉積層沉積於該基材之接觸洞内，其中沉積 層内並有空洞及不連續性留於其中； 第2圖為一成套設備系統的示意圖，其中具有多重基材 處理室； 第8頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —^—·--------------訂--------- (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 512448 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 第3圖顯示本發明之氬電漿清洗及氫電漿清洗步驟的流 程圖，其中並顯示氫、氬電漿步騾的前後步驟； 第4圖為為適用於沉積一阻障層之一典型物理氣相沉積 室；及 第5圖為適用於本發明中之一典型預清洗室的剖面圖。 圖號對照說明： 10 基材 11 高深寬比之洞 12 介電J 14 側壁 100 成 套 設 備 系 統 105 負 載 室 110 負 載 室 115 第 段 轉 送室 120 第 一 機 械 人 125 基 材 處 理 室 130 基 材 處 理 室 135 轉 送 室 140 第 二 段 轉 送 室 145 第 二 機 械 人 150 基 材 處 理 室 155 基 材 處 理 室 160 處 理 室 165 基 材 處 理 室 3 10 物 理 氣 相 沉 積室 3 12 室 密 閉 組 件 3 14 基 材 支 撐 組 件 3 16 靶 材 318 屏 蔽 320 夾 環 322 氣 體 入 口 324 出 π 326 磁 鐵 組 件 328 射 頻 電 漿 電源 330 基 材 332 反 應 區 域 334 射 頻 偏 壓 源 510 預 清 洗 室 512 基 材 支 撐 組 件 5 14 室 密 閉 組 件 第9頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---------' 512448 A7 —--—-E-__ 五、發明說明（） 516 石英圓頂 518 中央座檯板 520 凹處 522 隔離板 524 基材 526 射頻線圈 528 射頻偏壓源 530 射頻匹配網路 532 定位插鞘 發明詳細說明： 本發明之詳細描述： 本發明提出一種預清洗介層孔、接觸洞及其它在介電 層中被蝕刻之特徵區（如在一乾性或濕性蝕刻室内被氧化 的二氧化秒層）、並因此將一導電或半導電子層（如錯、碎、 鋁、銅或氮化鈦子層等）曝出的適當方法。蝕刻可將子層 曝出，以使特徵區為導電或半導電材料所填充，其中該導 電或半導電材料將子層及接下來將沉積於介電層之上的 金屬内連接層連接在一塊。不過，特徵區的蝕刻在介電層 中會留下污染物，這些污染物必須加以移除，以使特徵區 的填充效果獲得改善，並因此使得形成之元件的完整性及 可靠度得到改善。 在介電層姓刻完畢之後’特徵區内的發或金屬殘留物 可能因介電層被過度蝕刻而遭致破壞，另特徵區表面也可 同時包含有殘留之光阻，另可能還有介電蝕刻步驟所生成 之殘餘碳氫或氟化碳氫聚合物，其中該光阻係由光阻帶化 及/或拋光（ashing)製程所遺留下來的。這些污染物會進入 介電層或甚會因沉積金屬的不均勻分佈而干擾金屬化的 第10頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) >A_W^------—訂---------· 經濟部智慧財產局員工消費合作社印製 512448 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 選擇性，這些污染物同時會因大量縮小特徵區的寬产而立、 加沉積金屬的導電性，並因此使得介層孔、接觸線Z = 導電特徵區中金屬區域的縮小。 /、匕 以本發明之方法清洗及填充之次微米特徵區係以 統將一介電層沉積於一半導體基材上的技術形成，其中任 何現有或尚待開發之介電材料都可使用在本發明中，而 於本發明之範圍内，其中這些介電材料包含低介電材:屬 如有機聚合物及氣凝膠（aerogels)等。介電層可包含一或多 層之特徵層，並可沉積於任何加強子層的沉積物上，其= 較佳 < 加強子層之沉積物包含導電金屬與阻障表面，其中 導包金屬可如鋁及銅等，而阻障表面可如化鈦、釦及氮化 is等。 介電層一經沉積，接著就以傳統方法進行蝕刻，以在 J迅層中形成介層孔、接觸洞、溝渠或其它次微米特徵 區’其中特徵區一般都有高的深寬比，且其侧壁通常都是 陡Λ肖的。介電層的蝕刻可以任何之介電蝕刻方法為之，包 含電漿蚀刻等等，蝕刻二氧化矽之方法則包含以c2F6、SF6 及NF3化合物進行蝕刻。此外，層膜上模型之形成則可由 任何習知之方法加以形成。 較佳實施例之詳細描述：-、第2圖為一成套設備系統之示、意圖，其中具有多個基 材處理室於其中，該成套設備系統1 〇〇包含真空負载室 1 05，1 1 〇，其被接附至一第一段轉送室u 5。在基材進出該 第頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐512448 V. Description of the invention () The source is generated by reducing the RF bias voltage applied to the substrate supporting component, wherein the induction coil surrounds the process chamber, and the substrate supporting component is used to support the nuclear substrate. A barrier layer / thin layer can then be deposited on the dielectric layer with the characteristic surface. This step is performed after the dielectric layer is exposed to the first electrical assembly and the second electropolymerization. A metal layer can then be deposited on top of the barrier layer. In addition, the subsequent plasma processing can be performed in various plasma processing chambers used in an integrated process sequence, such as a pre-cleaning chamber, a physical vapor deposition chamber, an etching chamber, and other plasma processing chambers. Brief description of the drawings: The above and other objects, features, and advantages of the present invention can be further highlighted by the following detailed description in conjunction with the illustrated description. The specific description of the invention outlined above can be referred to the specific description in the detailed description. Examples, these specific examples are described in conjunction with the accompanying drawings. However, it is understood that the accompanying drawings are only used to illustrate typical embodiments of the present invention, rather than to limit the scope of the present invention. The present invention can still derive other different but equivalent embodiments. Figure 1 is a schematic partial cross-sectional view of a patterned substrate, showing a non-planar surface and an arbitrary oriented, fine-grained, rough surface deposition layer deposited in a contact hole of the substrate. There are voids and discontinuities left in the layer; Figure 2 is a schematic diagram of a complete set of equipment with multiple substrate processing chambers; Page 8 This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) — ^ — · ---------- Order --------- (Please read the notes on the back before filling this page) Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative 512448 A7 B7 Printed by the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Figure 3 shows a flowchart of the argon plasma cleaning and hydrogen plasma cleaning steps of the present invention. Figure 4 is a typical physical vapor deposition chamber suitable for depositing a barrier layer; and Figure 5 is a sectional view of a typical pre-cleaning chamber suitable for the present invention. Description of drawing numbers: 10 substrate 11 hole with high aspect ratio 12 dielectric J 14 side wall 100 complete equipment system 105 load chamber 110 load chamber 115 first transfer chamber 120 first robot 125 substrate processing chamber 130 substrate processing chamber 135 transfer chamber 140 second transfer chamber 145 second robot 150 substrate processing chamber 155 substrate processing chamber 160 processing chamber 165 substrate processing chamber 3 10 physical vapor deposition chamber 3 12 chamber sealing module 3 14 substrate supporting module 3 16 Target 318 Shield 320 Clamping ring 322 Gas inlet 324 Out π 326 Magnet assembly 328 RF plasma power supply 330 Substrate 332 Reaction area 334 RF bias source 510 Pre-cleaning chamber 512 Substrate support assembly 5 14 Chamber sealed component No. 9 The paper size of this page applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) -------- Order -------- -'512448 A7 —--—- E -__ V. Description of the invention () 516 Quartz round Top 518 Central base plate 520 Recess 522 Isolation plate 524 Substrate 526 RF coil 528 RF bias source 530 RF matching network 532 Positioning sheath Description of the invention: Detailed description of the invention: The invention proposes a pre-cleaning interlayer Holes, contact holes, and other feature areas that are etched in the dielectric layer (such as the second oxide layer that is oxidized in a dry or wet etch chamber), and therefore a conductive or semi-conductive sublayer (such as faulty, broken , Aluminum, copper, or titanium nitride sublayer, etc.). Etching may expose the sub-layer so that the feature area is filled with a conductive or semi-conductive material, wherein the conductive or semi-conductive material connects the sub-layer and a metal interconnect layer that is subsequently deposited on the dielectric layer. . However, the etching of the characteristic region will leave contamination in the dielectric layer, and these contaminants must be removed to improve the filling effect of the characteristic region and thus improve the integrity and reliability of the formed component. After the dielectric layer is engraved, the hair or metal residues in the 'feature area may be damaged due to the over-etching of the dielectric layer. In addition, the surface of the feature area may also contain residual photoresist, and there may be dielectric The residual hydrocarbon or fluorinated hydrocarbon polymer generated in the electro-etching step, wherein the photoresist is left over from the photoresist banding and / or polishing process. These pollutants can enter the dielectric layer or even interfere with metallization due to the uneven distribution of the deposited metal. Page 10 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the back first) Please fill in this page again) > A_W ^ -------- Order --------- · Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 512448 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Preparation A7 B7 V. Description of the invention () Selectivity, these pollutants will simultaneously stand up due to the large yield of narrowing the characteristic area, plus the conductivity of the deposited metal, and therefore make the vias and contact lines Z = the metal in the conductive characteristic area Area shrinking. / The sub-micron feature area cleaned and filled by the method of the present invention is formed by the technology of uniformly depositing a dielectric layer on a semiconductor substrate. Any existing or undeveloped dielectric material can be used in In the present invention, and within the scope of the present invention, these dielectric materials include low-dielectric materials such as organic polymers and aerogels. The dielectric layer may include one or more feature layers and may be deposited on the deposits of any reinforcing sub-layer, which = preferably < The deposits of the reinforcing sub-layer include conductive metal and barrier surface, wherein the conductive metal may be Such as aluminum and copper, and the barrier surface can be titanium, buckle and nitride is. Once the dielectric layer is deposited, it is then etched by conventional methods to form via holes, contact holes, trenches, or other sub-micron feature regions in the J's layer. The feature regions generally have a high aspect ratio, and The side walls are usually steep. The dielectric layer can be etched by any dielectric etching method, including plasma etching, etc., and the method of etching silicon dioxide includes etching with c2F6, SF6, and NF3 compounds. In addition, the formation of the model on the film can be formed by any conventional method. Detailed description of the preferred embodiment:-, Figure 2 is a diagram and an intent of a complete equipment system, which has a plurality of substrate processing chambers therein, the complete equipment system 1 00 includes a vacuum load chamber 1 05, 1 1 〇, which is attached to a first transfer room u 5. This paper is in and out of the substrate. Page size of this paper applies Chinese National Standard (CNS) A4 (210 X 297 mm)
--------訂--------- (請先閱讀背面之注意事項再填寫本頁) A7 B7 五 、發明說明（ 系統100時，該負載室105，11〇在該第一段轉送室115内 係維持在真2條件中。一第一機械人i20將基材在負載室 1〇5，1 10及一或多個基材處理室125及13〇之間轉送，其 中基材處理室125及130被接附至該第一段轉送室i 15。 處理室125,1 30的功能在於對基材進行一系列的處理動 作，如化學氣相沉積（CVD)、物理氣相沉積（ρν〇)蝕刻、預 α洗抽氣、足向及其它種種基材處理動作等。第一機械 人120同時將基材轉移至一或多個轉送室135，或從該一 或多個轉送室135將基材轉送至它處，其中該轉送室135 位於涊第一段轉送室115及一第二段轉送室14〇之間。轉 ill 35被用以在第一段轉送室14〇内維持超高之真空條 件，而此時基材在第-段轉送t 115&第二段轉送室14〇 <間轉运。此外’ 一第二機械人145負責將基材在轉送室 135及複數個基材處理室15〇，155,16〇及165之間轉送。 外加的處理室150，165就與上述之處理室i25，i3〇者 相同，其可對基材進行所需之處理動作。例如，處理室 為 D皇其可用以沉積氧化碎層；處理室15 5為一 蚀刻室，其可用以雜同或開口，以形成内連接特徵區； 處理$ 160為- PVD室，其可用以反應性賤鍍一阻障層， 如纽及/或氮化而處理室165為—ρν〇室，其可；以 錢鍍一導電膜，如銅等等。以上所列之製程室順序係可有 效用於本發明的順序。此外，複數個成套設備系統也是需 要的’以能完成製造積體電路或晶片之内連接部份 製程步驟。 ¥ 第12頁 X 297¾ ) 本紙張尺錢财_家 ^^448 ^^448 經濟部智慧財產局員工消費合作社印製 發明說明（） 在操作中，基材被轉運帶或機楠λ S λ Α 成蛾人系統（未顯示）送至 真空負載室105,110,其中轉運帶及嬙 V及機械人系統的動作係 由電腦或微處理器執行之電腦程式所批 八听控制。此外，機械人 1 20及1 45根據電腦程式之指示而將茸从*山1 Μ册基材在成套設備系統 1 〇〇的各不同製程室之間轉送。 以上所述之成套設備系統主要僅係說明用，其它之電 聚處理設備都可加入該成套設備中而成為其部份，如電子 遊旋加速震盛器（ECR)電浆處理裝置、感應耦合射頻高密 度電漿處理裝置等等都可加入其中。此外，本發明中氧化 秒層及阻障層的形成方法並不限於任何特定之設備或任 何特定的電漿激發方法。 第3圖為一流程圖，其中說明本發明之氬預清洗步驟 及氣笔漿預α洗步驟’另還包含其它發生在氫電漿預清洗 步驟之前或之後的步驟’其中這些步驟可以該成套設備系 統1 0 0之微處理器或電腦控制器執行之電腦程式所控制。 首先’ 一介電層沉積在一基材之上（步驟200)，其中 介電層（如氧化矽膜之沉積）的沉積可由各種習知之方法為 之’並以化學氣相沉積法進行為佳，例如可在第2圖所示 之CVD室150内進行其沉積。不過，在介電層沉積之前， 基材通常都已經過多道製程步驟，以期完成熟知此項技術 者所習知的主動元件及其它結構。 其次，介電層可以可加以平坦化（步驟2 〇 5 )，以符其 上所待沉積之膜層所需，其中平坦化步驟可包含化學機械 研磨（CMP)、蝕刻或其它類似之製程。内連接的開口及孔 第13頁 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐） --------訂--------- (請先閱讀背面之注咅？事項再填寫本頁) 512448 五、發明說明（ ;同二觸洞及介層孔等)都在介電層中被加以钕刻(步驟 中濺擊触刻可以在-典型的姓刻室中進行，如可 在第2圖中之成套設備系統⑽的 般說來，介電層的厚度約在。.5微米至3·。二 内連接特徵區的開口為半次微米，其深寬比則大於… 步驟205 A 210在基材上形成具特徵區的表面，其中内連 接特徵區在稍後將加以金屬化，或是填以材料層。 接下來，進行者為本發明之氬電漿清洗（步驟幻2)， 其係對具特徵表面之基材進行清洗，以將前面製程步驟所 留下來的沉積物加以移除。在氬電漿處理步驟中，沉積物 為氬電漿所濺擊並從孔中移出，此步驟可在各種製程室中 進行，但以在一預清洗室中進行為佳。接下來，本發明之 氫電漿預清洗步驟（步驟2 1 5 )就被用以將氧化鋼還原成 銅’並對介電層結構加以清洗及將之穩定化。預清洗步驟 雖可在一般的電漿處理室中進行，但仍以在一預清洗室中 進行為佳。在以下將對本發明之氬電漿蝕刻及氫電聚預、、青 洗步驟進行詳細解說，吾人並可同時參閱第5圖之配人說 明。 經濟部智慧財產局員工消費合作社印製 接下來，一擴散阻障層（以氮化妲）被加以沉積（步驟 220)，以避免矽擴散進入上方之金屬層。該擴散阻障層同 時改善了不同層膜之間的黏著性’如一金屬層與—氧化石夕 層之黏著性。氮化鈕層以利用一 PVD室（反應濺鍍法所用 之製程室，其已為習知設備）進行沉積為佳，擴散阻障層 的厚度則以介於約50埃至約200埃為佳。 第14頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 512448 A7 B7 五、發明說明（ 第4圖為沉積一阻障層用之典型pvD室的剖面圖， ”中PVD至3 1 〇 -般包含-室密閉組件3 1 2、一基材支撐 組件 3 1 4、一 4J- 7 1/： t=> 材316、一屏蔽318、一夾環32〇、一氣體 。 2 氣體出口 324、一磁鐵組件326、一射頻電漿 電源328及—射頻偏壓源…。在沉積進行之前，一基材 330置於基材支撐組件叫之上，而—製程氣流從氣體入 口 322處導入—反應區域，其中該氣體入口 322位於 乾材k、#及屏敝頂邵之間，而該反應區域m為乾材 316、基材330及屏蔽318所界定範圍。射頻電漿電源Μ 將射頻電能提供至革巴材處，以在製程中對反應區域332内 h名加以& |並維持之，@同時也有—射頻偏壓源… 將射頻偏壓提供予基材支撐組件314。屏蔽318在製程進 行中通常是接地的。在沉積時’電槳中的離子撞擊乾材， 並私革巴材從其表面處轟出，被轟出的材料就與電漿中的離 子反應’ ϋ在基材之表面上形成所需要之沉積物。在阻障 層（如备、氮化备）的沉積中，製程氣流通常至少包含氯及 氮，其中氬是轟擊靶材316之電漿離子的主要氣源，而氮 主要作用為與從靶# 316中轟出的原子⑻作用而在基材 330上形成妲/氮化纽膜。當阻障層沉積完成之後，基材就 以約300。^約500“溫度加以回火，以改善沉積膜層 之材料特性。 曰 最後，一金屬層（如銅）被沉積在擴散阻障層之上，如 此就冗成内連接的形成工作（步·驟255)，其中金屬層的厚 度以約6000埃至10000埃為佳，而其沉積則可在一典型 第15頁 X 297公釐/ 本紙張尺度適財關家標準（CNS)A4規格（2ι〇· 512448 A7 B7 五、發明說明（ V詞关®^?黄面之注意事項再填寫本頁) PVD室中或一典型CVD室中進行，這都屬於習知之領域。 此外，以上所言及之製程可以不斷重覆進行，以製造出更 多層的積體電路結構。 在本發明中，具特徵區的介電層先利用一氬電漿清 洗’接著在氮化輕阻障層形成之前再加以氫電漿清洗，其 中預清洗動作可以在各不同製程中進行，如pvD製程室、 CVD製程室、蝕刻室及一預清洗室等等。此外，預清洗動 作以在氮化短阻障層形成之前於一預清洗室中進行為 佳。儘管本發明係利用一預清洗室進行清洗，但當了解的 疋本發明的預清洗動作可以在各種不同的製程室中進 行° 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 第5圖為本發明適用之一典型預清洗室的剖面圖，美 國應用材料公司所產之precleari II chamber即為該等預清 洗室之一例。一般說來，預清洗室5丨〇具有一基材支撐組 件5 1 2，該組件5 1 2位於一石英圓頂5丨6的一室密閉組件 514内。該基材支撐組件512 —般包含一中央座檯板518， 其位於隔離板522上之一凹處520之内，其中該隔離板522 為石英、陶磁等等所組成。在預清洗製程進行中，基材5 2 4 置於中央座檯板5 1 8上’並為定位插鞠5 3 2限制於該板5 1 8 上。一射頻線圈5 2 6以位於石英圓頂5 1 6之外、並連接至 —射頻電源524為佳，以能撞擊並維持該室中製程氣流之 電漿。一般說來，一射頻匹配網路5 3 0可使射頻電源5 24 及射頻線圈5 2 6相匹配。基材支撐組件5 1 2 —般連接至一 射頻偏壓源5 2 8，該偏壓源5 2 8則提供偏壓予基材支撐組 第16頁 規格（210 X 297公釐） ：)丄 Α7 Β7 五、發明說明（ 件5 1 2，其中射布啦 〜藏源524以能提供線圈526高至約500 瓦特、2M赫益將、方 '率的電源為佳，而射頻偏壓源528以能 提供基材支撐纟且杜 、汗512約500瓦特、13.56赫茲頻率的電 源為佳。 本發明中，且4土 ^ 、 /、待徵區（或經蝕刻）之基材在一阻障層形 成之則以先利用一氬電漿並隨後利用一氫電漿在預清洗 至中進仃預β洗為佳。更佳的做法是，先將介電層加以平 ^ 、、在/、中形成内連接特徵區之開口，而後再將基材 k至預巧洗至内。此外，基材之特徵區蝕刻可在基材被送 至：具有7預清洗室之處理平臺或系統之前由另一處理 平堂或系統來處理，一旦基材被置於預清洗室中進行處理 時’-製程氣流就被導進該反應區域，並以達至約〇·8毫 耗爾的壓力為佳，其中該製程氣體至少包含主要之氯氣 (即其原子數所佔大於50%)。當氬氣電漿在反應區域被撞 擊時:基材就處於氬濺擊沉清洗的環境中，其中氬電漿的 產生最好是以由射頻電源524提供約5〇瓦特至約5⑽瓦 特之間的電能給予射頻線圈526為佳，並以將约5〇瓦特 至約500瓦特的射頻偏壓從射頻偏壓源528送至基材支撐 組件M2為佳。氬電漿須被提供約1()秒至約_秒的日; 間，以對沉積物進行足夠久的清洗時間，而該等沉積物可 輕易為反應性氫電漿所移除。此外，翕+ 虱电漿以為約300瓦 特的射頻電源產生、並提供至線圈，而 叩册約300瓦特的射 頻偏壓提供予基材支撐組件為佳，其中 甲电漿的維持時間則 以6 0秒鐘為佳。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 512448 A7 五、發明說明（ 氬電漿處理完成後，室内壓力增至約8 0毫托爾，之 後一包含氫及氦的製程氣體被導進反應區域中，其中氫的 原子數約佔5%至1〇0%之間，而製程氣體實以包含5%的 氫及9 5 %的氦為佳，當該兩者構成的電漿在反應區域中撞 擊’基材就處於反應性氫電漿環境中，其中氫電漿是由射 頻電源524提供射頻線圈524以約5〇瓦特至300瓦特的 電源、並由射頻偏壓源528提供基材支撐器5丨2以約5瓦 特至約300瓦特之射頻偏壓而產生。氫電漿被維持在約μ 秒至約300秒之間，以將氧化銅還原成銅，並對基材加以 清洗。此外，氫電漿以由射頻電源524提供射頻線圈 約450瓦特的電源、並由射頻偏壓源528提供基材支撐哭 5 12以約10瓦特之射頻偏壓而產生為佳，且電漿之維 間以約60秒為佳。一旦預清洗動作完成，預清洗室的^ 程氣體及反應副產物就被抽出，阻障層接就沉積於已經产 洗之基材上，而接下來述於第3圖之製程就續而進行二… 本發明已可經由前述之文字說明與舉圖例說 以了解。但當了解的是本發明之範圍並不僅侷限得 說明之實施例’實則應包含所有對以上實施例進行所 及其等效範圍’這些都不脫離所附之專利中請範 = 及範圍之外。 」得砷 第18頁-------- Order --------- (Please read the precautions on the back before filling this page) A7 B7 V. Description of the invention (for system 100, the load chamber 105, 11〇 in The first transfer room 115 is maintained in the true 2 condition. A first robot i20 transfers the substrate between the load chamber 105, 110 and one or more substrate processing chambers 125 and 130. The substrate processing chambers 125 and 130 are attached to the first transfer chamber i 15. The function of the processing chambers 125, 130 is to perform a series of processing operations on the substrate, such as chemical vapor deposition (CVD), Physical vapor deposition (ρν〇) etching, pre-α washing and pumping, footing, and various other substrate processing actions, etc. The first robot 120 simultaneously transfers the substrate to one or more transfer chambers 135, or from the one One or more transfer chambers 135 transfer the substrate to other places, wherein the transfer chamber 135 is located between the first-stage transfer chamber 115 and the second-stage transfer chamber 140. The transfer ill 35 is used to transfer in the first stage The ultra-high vacuum condition is maintained in the chamber 14 while the substrate is transferred in the first stage t 115 & the second stage transfer chamber 14 0 < In addition, a second robot 145 Responsible for transferring the substrate between the transfer chamber 135 and the multiple substrate processing chambers 150, 155, 16 and 165. The additional processing chambers 150 and 165 are the same as the above-mentioned processing chambers i25 and i30. Perform the required processing actions on the substrate. For example, the processing chamber is D, which can be used to deposit the oxidized debris layer; the processing chamber 155 is an etching chamber, which can be used for heterogeneous or opening to form the interconnected feature area; processing $ 160 is-PVD chamber, which can be used to reactively plate a barrier layer, such as Niu and / or nitridation, while the processing chamber 165 is a -ρν〇 chamber, which can be; a conductive film, such as copper, etc., is plated with money. The process chamber sequence listed above is a sequence that can be effectively used in the present invention. In addition, a plurality of complete equipment systems are also needed to complete the process steps of manufacturing integrated circuits or interconnects of the chip. ¥ Page 12 X 297¾) This paper rule money_ 家 ^^ 448 ^^ 448 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Consumption Cooperative, printed invention description () In operation, the substrate is transferred by a belt or machine. (Not shown) sent to vacuum load chamber 105,110, where the transfer belt and Action line V and robot systems by the execution of a computer or microprocessor computer program granted eight control. In addition, the robots 1 20 and 1 45 transfer the raw materials from the * 1M book substrates between the different process chambers of the complete equipment system 100 according to the instructions of the computer program. The above-mentioned complete equipment system is mainly for illustrative purposes. Other electro-polymerization processing equipment can be added to the complete equipment to form part of it, such as the electronic spin acceleration shock absorber (ECR) plasma treatment device, inductively coupled radio frequency. High density plasma processing equipment and the like can be added to it. In addition, the method for forming the oxidation second layer and the barrier layer in the present invention is not limited to any particular device or any particular plasma excitation method. FIG. 3 is a flowchart illustrating the argon pre-cleaning step and the air pen pulp pre-α washing step of the present invention, 'in addition to including other steps which occur before or after the hydrogen plasma pre-cleaning step', wherein these steps can be the complete set Controlled by a computer program executed by a microprocessor or computer controller of the equipment system 100. First 'a dielectric layer is deposited on a substrate (step 200), wherein the deposition of the dielectric layer (such as the deposition of a silicon oxide film) can be performed by various conventional methods' and is preferably performed by a chemical vapor deposition method For example, the deposition can be performed in the CVD chamber 150 shown in FIG. 2. However, before the dielectric layer is deposited, the substrate usually has multiple process steps in order to complete the active devices and other structures known to those skilled in the art. Secondly, the dielectric layer may be planarized (step 205) to meet the requirements of the film layer to be deposited thereon. The planarization step may include chemical mechanical polishing (CMP), etching, or other similar processes. Inner openings and holes on page 13 This paper is sized for the Chinese National Standard (CNS) A4 (21〇χ 297 mm) -------- Order --------- (please first Read the note on the back? Matters and then fill out this page) 512448 5. The description of the invention (; the same two contact holes and vias, etc.) are all engraved with neodymium in the dielectric layer (splash contact engraving in the step can be-typical The thickness of the dielectric layer is about .5 microns to 3. The opening of the inner connection feature area is half a submicron, as can be seen in the complete equipment system in Figure 2. The aspect ratio is greater than ... Step 205 A 210 forms a surface with a characteristic region on the substrate, wherein the interconnected characteristic region will be metallized later or filled with a material layer. The invention's argon plasma cleaning (step 2) is to clean the substrate with a characteristic surface to remove the deposits left from the previous process steps. In the argon plasma treatment step, the deposits are The argon plasma is splashed and removed from the hole. This step can be performed in various process chambers, but it is performed in a pre-cleaning chamber. Next, the hydrogen plasma pre-cleaning step (step 2 15) of the present invention is used to reduce the oxide steel to copper 'and to clean and stabilize the dielectric layer structure. Although the pre-cleaning step can be performed at It is generally carried out in a plasma treatment chamber, but it is still better to perform it in a pre-cleaning chamber. The argon plasma etching, hydrogen electropolymerization, and green cleaning steps of the present invention will be explained in detail below. Refer to the description of the partner in Figure 5. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Next, a diffusion barrier layer (using hafnium nitride) is deposited (step 220) to prevent silicon from diffusing into the upper metal layer. The diffusion barrier layer simultaneously improves the adhesion between different layers, such as the adhesion between a metal layer and a stone oxide layer. The button layer is nitrided to use a PVD chamber (the process chamber used in the reactive sputtering method, It is a well-known device) for deposition, and the thickness of the diffusion barrier layer is preferably between about 50 angstroms and about 200 angstroms. Page 14 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 512448 A7 B7 five Description of the Invention (Figure 4 is a cross-sectional view of a typical pvD chamber used for depositing a barrier layer, "" PVD to 3 1 0- "generally includes-chamber closed module 3 1 2, a substrate support module 3 1 4, 4J -7 1 /: t = > material 316, a shield 318, a clamp ring 320, a gas. 2 a gas outlet 324, a magnet assembly 326, a radio frequency plasma power source 328, and a radio frequency bias source ... Before the deposition, a substrate 330 is placed on the substrate support assembly, and the process gas flow is introduced from the gas inlet 322 to the reaction area, where the gas inlet 322 is located between the dry material k, # and the screen top The reaction area m is defined by the dry material 316, the substrate 330, and the shield 318. The RF plasma power supply M supplies RF energy to the leather material, in order to add & | to the h name in the reaction area 332 during the manufacturing process, and also maintain @ @ 有 有 —RF bias source ... Provide RF bias to the base材 Support 组合 314. Shield 318 is usually grounded during the process. During the deposition 'the ions in the electric paddle hit the dry material, and the leather material blasted from its surface, and the blasted material reacted with the ions in the plasma' ϋ formed on the surface of the substrate Sediment. In the deposition of barrier layers (such as preparation and nitridation preparation), the process gas stream usually contains at least chlorine and nitrogen, of which argon is the main source of plasma ions that bombarded the target material 316, and nitrogen mainly acts as a secondary target. The atomic plutonium bombarded in 316 acts to form a plutonium / nitride button film on the substrate 330. When the barrier layer is deposited, the substrate is about 300 Å. ^ Tempered at about 500 "temperature to improve the material properties of the deposited film layer. Finally, a metal layer (such as copper) was deposited on the diffusion barrier layer, so that the formation of internal connections was redundant (step · Step 255), where the thickness of the metal layer is preferably about 6000 Angstroms to 10,000 Angstroms, and its deposition can be on a typical page 15 X 297 mm / this paper standard (CNS) A4 size (2ι 512448 A7 B7 V. Description of the Invention (Notes on V-Cikey® ^? Yellow Surface, please fill out this page) PVD room or a typical CVD room, which are all known fields. In addition, the above mentioned The process can be repeated repeatedly to produce more layers of integrated circuit structures. In the present invention, the dielectric layer with the characteristic region is first cleaned with an argon plasma, and then before the nitrided light barrier layer is formed, Hydrogen plasma cleaning is performed, in which the pre-cleaning action can be performed in various processes, such as a pvD process chamber, a CVD process chamber, an etching chamber, a pre-cleaning chamber, etc. In addition, the pre-cleaning action is to short the barrier layer in nitriding. It is preferably performed in a pre-cleaning chamber before formation. Although the present invention uses a pre-cleaning room for cleaning, it should be understood that the pre-cleaning action of the present invention can be performed in various different process rooms. 5 Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 5 is applicable to the present invention. A cross-sectional view of a typical pre-cleaning chamber. The precleari II chamber produced by American Applied Materials is an example of such pre-cleaning chambers. Generally, the pre-cleaning chamber 5 has a substrate support assembly 5 1 2, The component 5 1 2 is located in a chamber closed component 514 of a quartz dome 5 6. The substrate support component 512 generally includes a central seat plate 518 located in a recess 520 on the isolation plate 522. , Where the isolation plate 522 is composed of quartz, ceramic magnetic, etc. During the pre-cleaning process, the substrate 5 2 4 is placed on the central base plate 5 1 8 'and is limited to the plate 5 3 2 for positioning. 5 1 8. An RF coil 5 2 6 is preferably located outside the quartz dome 5 1 6 and is connected to an RF power source 524 so as to be able to impact and maintain the plasma of the process airflow in the chamber. Generally speaking, A radio frequency matching network 5 3 0 enables The frequency power supply 5 24 and the RF coil 5 2 6 are matched. The substrate support assembly 5 1 2 is generally connected to a radio frequency bias source 5 2 8 which provides a bias voltage to the substrate support group. 16 pages of specifications (210 X 297 mm) :) 丄 Α7 Β7 V. Description of the invention (Piece 5 1 2 of which is shot ~ Tibetan source 524 to provide a coil 526 up to about 500 watts, 2M He Yi, square The power source of the radio frequency is better, and the RF bias source 528 is preferably a power source capable of providing substrate support, and a power of about 500 watts and a frequency of 13.56 Hz. In the present invention, if the substrate of the area to be requisitioned (or etched) is formed in a barrier layer, an argon plasma is used first and then a hydrogen plasma is used to pre-clean the medium.仃 Pre-beta washing is better. A better method is to first planarize the dielectric layer to form the openings of the interconnecting feature area in /, and then wash the substrate k to the inside in advance. In addition, the etching of the characteristic area of the substrate can be processed by another processing chamber or system before the substrate is sent to: a processing platform or system with a 7 pre-cleaning chamber. Once the substrate is placed in the pre-cleaning chamber for processing At that time, the process gas flow is guided into the reaction zone, and the pressure is preferably up to about 0.8 milliwatts, wherein the process gas contains at least the main chlorine gas (that is, its atomic number accounts for more than 50%). When the argon plasma is impacted in the reaction area: the substrate is in an environment of argon splashing, sinking and cleaning. The argon plasma is preferably generated by a radio frequency power supply 524 between about 50 watts and about 5 watts. Preferably, the RF power is given to the RF coil 526, and the RF bias voltage of about 50 watts to about 500 watts is preferably sent from the RF bias source 528 to the substrate support assembly M2. The argon plasma must be provided for a period of about 1 () seconds to about _ seconds; for a long enough cleaning time for the deposits, which can be easily removed by the reactive hydrogen plasma. In addition, the maggot + lice plasma is generated for the RF power of about 300 watts and provided to the coil, and the RF bias of about 300 watts is preferably provided to the substrate support assembly. The maintenance time of the plasmon is 6 volts. 0 seconds is better. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 512448 A7 V. Description of the invention (After the argon plasma treatment is completed, the indoor pressure increases to about 80 mTorr, and the latter includes hydrogen and helium The process gas is introduced into the reaction area, where the number of hydrogen atoms is between about 5% and 100%, and the process gas is preferably containing 5% hydrogen and 95% helium. When the two The formed plasma strikes the substrate in the reaction area and the substrate is in a reactive hydrogen plasma environment. The hydrogen plasma is provided by a radio frequency power supply 524. The radio frequency coil 524 is powered by about 50 watts to 300 watts. The pressure source 528 provides the substrate support 5 2 with a radio frequency bias of about 5 watts to about 300 watts. The hydrogen plasma is maintained between about μ seconds and about 300 seconds to reduce copper oxide to copper. And the substrate is cleaned. In addition, the hydrogen plasma is generated by the RF power source 524 with a power supply of about 450 watts of the RF coil, and the RF bias source 528 is used to support the substrate. It is better, and the dimension of the plasma is preferably about 60 seconds. Once pre-cleaning action In this way, the gas and reaction by-products of the pre-cleaning chamber are extracted, and the barrier layer is deposited on the substrate that has been washed. Then, the process described in FIG. 3 is continued. It can be understood through the foregoing text descriptions and illustrations. However, it is understood that the scope of the present invention is not limited to the illustrated embodiments. 'In fact, it should include all the above embodiments and their equivalent ranges.' Without departing from the attached patent, please refer to the scope and scope. "
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