TWI332124B - Lithographic apparatus, device manufacturing method, and device manufactured thereby - Google Patents

Description

1332124

The present invention relates to a lithographic projection apparatus comprising: - a light-emitting system for supplying a projected beam of radiation; - a support structure for supporting a patterned member, the patterned member being adapted to a desired pattern Projection beam patterning; - a substrate stage for supporting a substrate; and - a projection system for projecting the patterned beam onto the target portion of the substrate. The term "patterned member" as used herein shall be interpreted broadly to mean a member that can be used to impart an incoming radiation beam to pattern a profile that corresponds to the pattern of the target portion to be produced on the substrate; the term " Light valves can also be used in this context. In general, the pattern will correspond to a particular functional layer in the component that is produced in the target portion, such as an integrated circuit or other component (see below). Examples of such patterned members include: - a mask. The concept of a mask is well known in lithography, and it encompasses mask patterns such as binary, alternating phase and attenuated phase shifting, as well as various mixed mask patterns. The placement of the mask in the radiation beam results in selective transmission of radiation (in the case of transmissive masks) or reflection (in the case of reflective masks) of the radiation applied to the mask in accordance with the pattern on the mask. In the case of a mask, the support structure is generally a masking station that ensures that the mask can support the desired position in the incoming radiation beam and that it can move relative to the beam (if so). - A programmable mirror array. An example of such a device is a matrix addressable surface having an adhesive and flexible control layer and a reflective surface. The basic principle of this device is that, for example, the addressing area of the reflective surface will

78208-990714.DOC 1332124

The incident light is reflected as diffracted light ' while the unaddressed region reflects incident light into undiffracted light. Using a suitable filter, the undiffracted light can be filtered out of the reflected beam leaving only the diffracted light; in this manner, the beam becomes patterned according to the addressing pattern of the matrix addressable surface. A further embodiment of the programmable mirror array, using a matrix configuration of the small mirrors, by applying a suitably localized electric field, or by applying a piezoelectric actuator member, each small mirror can be individually tilted about an axis . Again, the mirror matrix can be addressed, allowing the mirror of the given society to reflect the incoming radiation beams in different directions to the mirrors that are not addressed, in such a way that the reflected beams are patterned according to the addressable addressing pattern of the matrix. The required matrix addressing can be performed using appropriate electronic components. In both of the above cases, the visualization component can include one or more arrays of programmable mirrors. More information on the mirror arrays mentioned herein can be obtained, for example, from U.S. Patent Nos. 5,296,891 and 1 5,523,193, and the patent application Serial No. 98/38,597 The way it is in this article. In the case of a programmable mirror array, the support structure can be implemented, for example, by a frame or a table, which is required to be fixed or movable. System -- a programmable LCD display array. An example of such a configuration is shown in U.S. Patent No. 5,229,872, the disclosure of which is incorporated herein by reference. As above, the fulcrum structure in this case can be implemented by, for example, a frame or a table, which can be fixed or movable when needed. For the sake of simplicity, the remainder of this article (at a certain location) is specifically directed to the example of a mask and a masking station; however, as discussed in this context, it must be more of the patterned components proposed above. Ups and downs

78208-990714.DOC This paper is applicable to the Chinese national standard (cns) A4 regulations (21〇X297ny 1332124)

The lithographic projection device can be used, for example, in the fabrication of integrated circuits (ic). In this case, 'the patterned member can produce a circuit pattern corresponding to the individual layers of the integrated circuit' and this pattern can be imaged on the substrate (_wafer). It has been coated with a layer of radiation-sensitive material (photoresist) The target portion (eg, including one or more 曰曰 ) ) 通 通 通 通 通 ' ' 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 ' ' ' ' ' ' ' ' ' In the current device, the pattern & in the mask of the masking table i can be distinguished between two different types of machines. In a lithographic projection apparatus, each target portion is irradiated by exposing the entire mask pattern to a target portion at a time; this device is generally referred to as a wafer stepper. In an alternative device, commonly referred to as a step-and-scan device, the irradiation of the target portion is progressively scanned by a mask pattern below the projected beam in a given reference direction ("scan" direction), and synchronized scanning Parallel or anti-parallel substrate stages; because of the usual projection system, the magnification factor is Μ (usually <U, the speed of the scanning substrate stage will be a factor of one, which is M times the speed of scanning the mask stage. Further information on the lithographic apparatus described herein can be obtained, for example, from U.S. Patent No. 4,792, the disclosure of which is incorporated herein by reference in its entirety in its entirety in (for example, in a mask) imaged on a substrate that is at least partially covered by a layer of radiation-sensitive material (resistance). Prior to this imaging step, the substrate can undergo various processes, such as undercoating, photoresist Coating and soft baking. After exposure, the substrate may be subjected to other procedures such as post-exposure baking (ΡΕΒ), development 'hard-bake and imaging features/testing. The basis for the individual layer patterning of the device (eg integrated circuit). Then, this figure 78208-990714.DOC _ 6 - This paper scale applies to the Chinese National Standard (CNS) Α4 specification (210X 297 mm) with η line 1332124

The layer may be subjected to other processes such as etching, ion implantation (doping), metallization, oxidation, chemical mechanical polishing, etc., all of which are intended to complete a separate layer. If several layers are required, then all programs or their changes must be repeated for each new layer. Finally, an array of components will be presented on the substrate (wafer). These components are then separated from each other by techniques such as cutting or dicing. Thus, individual components can be mounted on the carrier, attached to pins, and the like. Additional information about this process can be obtained from, for example, the book by _peter van Zant, "Microcrystalline wafer fabrication. Practical guidelines for semiconductor processing (Micr〇chip Fabricati()n: A

Practical Guide to Semiconductor Processing), Third Edition, McGraw Hill Publishing Company, 1997, ISBN _ 07-067250-4, which is incorporated herein by reference. For the sake of simplicity, the projection system may hereinafter be referred to as a "lens"; however, the term must be interpreted broadly to encompass a variety of projection systems including, for example, refractive optics, reflective optics, and catadioptric optical systems. The radiation system may also include elements that operate in any of these designs depending on the projected beam used to direct, shape, or control the radiation, and such elements may also be collectively referred to below or individually as "lenses." In addition, the lithography apparatus can be of the type having two or more substrate stages (and/or two or more mask stages). In this "multi-stage" device, additional stations can be used in parallel, or preliminary steps can be performed on one or more stations, and one or more other stations can be used for exposure. A two-stage lithography apparatus is described, for example, in U.S. Patent Nos. 5,969,441 and 10 98/40,791, the disclosures of

The lithographic projection apparatus and method are well known, and the two masks and two exposures are used in the 78208-990714.DOC paper scale for the Chinese National Standard (CNS) A4 specification (210X 297 mm) binding.

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In the second orientation, for example, bipolar illumination is applied, which matches the important features in the two orientations. A further example of the two masking and two exposure methods applies bipolar illumination for printing dense features having a small pitch and application of %-shaped illumination for semi-compact printing to the isolation features at a pitch greater than the pitch of the dense features. . As an example, the two corresponding exposures are performed continuously to obtain a combined exposure. This "double exposure" application has two special advantages. In the first example, the resolution of the two orientations can be better than the resolution obtained by, for example, a single exposure quadrupole illumination. In the second example, the optical approach correction method can be independently selected for the second exposure. This additional degree of freedom can be used to alleviate the problem of dimensional changes in the printed features - a function of their spacing. Further information on this dual exposure application can be obtained, for example, from European Patent Application No. 308,528,9 and 〇〇31 to 368.6, which is incorporated herein by reference. While the performance of the apparatus and method is superior to conventional apparatus and methods, one drawback is that they require exposures that are twice as large as conventional methods and methods, halving throughput. SUMMARY OF THE INVENTION One object of the present invention is to provide a lithographic projection apparatus and method that can incorporate a different mask exposure without substantially reducing throughput. According to the present disclosure, this and other objects are achieved by a lithography apparatus as mentioned in the opening paragraph, characterized in that the apparatus further comprises: - a member for providing an auxiliary projection beam of radiation; The support structure is further used for a branch auxiliary patterning member for patterning the auxiliary projection beam according to an auxiliary pattern different from the pattern of the patterned member; ~ 78208-990714.DOC · 8 · Paper size Applicable to the group standard (€;1^8) A4 specification (21〇χ297 public) 5. Inventive Note (6 and the two patterned projection beams are superimposed on each other and projected on the substrate at the same time. / For easy reference We will refer to this radiation system as "first radiation system" and the auxiliary radiation system as "second radiation system". Similarly, we will lightly project the projected beam, the patterned member and the pattern. The first projected beam of light, the first patterned member J, the first pattern, and the auxiliary projected beam, the auxiliary patterned member and the auxiliary pattern are collectively referred to as "radiation" a second projected beam, a "second patterned member", and a "second pattern." This device is advantageous because it allows two different patterns to be simultaneously projected onto the base to provide the performance advantages of the two exposure method, and roughly The processing time of the process is not increased. A drawing device, the use of the single-branch structure for the first-patterning member and the first-patterning member allows the use of the single-actuator's Hg case The member is simultaneously translated in the sweeping direction. This reduces the possible alignment of the two exposures relative to each other (4), reducing the complexity of the device itself' because there is no need to synchronize the two independent scanning support structures and reduce the cost of the device. Because it avoids repeating the structure. The second patterned member can be supported on the support structure such that the major faces of the first and second patterned members are substantially orthogonal to each other to facilitate projecting the two patterned beams onto the substrate. Single: a long stroke actuator can be used to position the support structure, while first and second short stroke actuators can be used to individually and firstly project the first and second projection devices relative to the support structure Bit This ensure overlay error between the first and second beams can be avoided Μ 'and allows considerations - e.g. lack patterned surface of each member

78208-990714.DOC 1332124 A7 B7 V. DESCRIPTION OF THE INVENTION (Particularly adjusting each patterned member. Preferably, the projection system of the device incorporates the first and second patterned beams] and projecting the combined beam onto the substrate On the target portion, this allows for sharing of many components of the projection system, reducing the potential for cost and error. In yet another preferred embodiment, the first and second projection beams are supplied by an independent radiation system. a beam of light that, when individually traversed across the first and second patterned members, is bonded using a polarized beam combiner. The arrangement of commercially available polarized beam combiners is typically such that the beams to be combined must be positive to each other. Therefore, it is preferred to position the radiation system and the patterned member in such a manner that the patterned light beams propagate toward the beam combiner in mutually orthogonal directions. According to still another feature of the present invention, a device manufacturing method is provided, including The following steps: - providing a substrate 'which is at least partially covered by a layer of radiation-sensitive material; - using a radiation system to provide a projected beam of radiation; Supporting-patterning the member on a support structure and using ^ to impart a pattern to the projected beam on its cross section; - projecting the patterned patterned beam onto the target portion of the layer of radiation-sensitive material. In addition, the following steps are included: - providing one of the radiation to assist the projection beam; constructing, and using it, in a pattern, the pattern and the image supporting an auxiliary patterned member to impart an auxiliary projection beam to the support junction on the cross section of the support The pattern of the components is different; and

78208-990714.DOC This paper scale applies to China National Standard (CNS) A4 specification (21GX 297 public love 3 ' ------ 1332124

The time is projected onto the radiation sensitive material to align the auxiliary patterned beam with the patterned beam. The use of the device according to the invention to manufacture integrated circuits has been specifically mentioned herein, but it should be understood that the device has many other possible uses: it can be used to manufacture integrated optical systems, courts, magnetic domains. Memory guiding and detecting patterns, liquid crystal display panels, thin film magnetic heads, and the like. Professionals can solve the problem. In the context of this alternative use, the use of the terms "main light cover", "yang circle" or "grain" must be considered in this article by a more general term. Cover, "Substrate" and "Target Part" (4). In this document, 'sense If' and 'beam' are used to cover all types of electromagnetic radiation, including ultraviolet radiation (eg, wavelengths of 365, 248, 193, 157, or 126 nm) and EUV (extreme ultraviolet radiation). For example, a wavelength in the range of 5-20 nm) and a particle beam such as an ion beam or an electron beam. BRIEF DESCRIPTION OF THE DRAWINGS Embodiments of the present invention will now be described by way of example only, and with reference to the accompanying drawings in which: FIG. 1 shows a lithographic projection in accordance with an embodiment of the invention; FIG. Figure 3 shows a patterned member support structure of the present invention; Figure 4 shows an embodiment in which the first and second projected beams of radiation are supplied by a single source of radiation; ', Figure 5 shows a beam splitter' which includes a plurality of parallels Configured splitter. Corresponding reference characters indicate corresponding parts. 78208-990714.DOC U _ This paper scale applies to China National Standard (CNS) grid (21〇x 297 mm) --------- 1332124 A7 __B7 V. Description of invention (9~) DETAILED DESCRIPTION OF THE INVENTION Example 1 Figure 1 shows schematically a lithographic projection apparatus in accordance with a particular embodiment of the present invention. The apparatus comprises: - a radiation system Ex, IL, a projection beam PB for supplying radiation (e.g., ultraviolet radiation), It also includes a radiation source la in this special case; a first object table (mask table) MT having a mask holder for supporting the mask μα (for example, a 'main mask') and connected thereto a first positioning device for accurately positioning the mask relative to the article PL; a second object table (substrate table) WT having a substrate support for supporting the substrate w (eg, 'resistor-coated germanium wafer) And connected to a second positioning device for accurately positioning the substrate relative to the article PL; - a target portion c for imaging the irradiated portion of the mask 于 to the substrate w (eg 'including one or more Projection system ("lens") PL on the die) as described herein Shooting type (having a transmissive mask). However, in general, it can also be of a reflective type (for example, having a reflective mask). In addition, the device can use other kinds of patterned members, such as the above-described type of programmable mirror The radiation source LA (eg, an excitation laser) produces a radiation beam that is fed into an illumination system (illuminator) either directly or after traversing an adjustment member, such as a beam expander 。_. The illuminator IL can include The adjustment member ΑΜ 'is used to set the outer and/or inner radial limits of the intensity distribution in the beam (usually referred to individually as σ outside and within σ). Furthermore, it typically includes various other components such as integrator IN and capacitor cc&gt In this way, applied to the mask ΜΑ -12-

78208-990714.DOC This paper size applies to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) 1332124 A7 B7 V. Description of the invention (the upper beam PB has the desired uniformity and intensity distribution in its profile) It should be noted that, regarding ^, the source LA may be in the outer casing of the lithographic projection device (such as the source of the LA-based mercury lamp), but it may also be remote from the lithographic projection device i's generated radiation beam introduction device. (For example, by means of a suitable indexing mirror, the latter scheme is usually a condition in which the source la system excites a laser. The invention and the scope of the patent application cover the two schemes. The beam PB then picks up the mask MA, which supports a mask' After traversing the mask ,, the beam ΡΒ passes through the lens du, which focuses the beam 叩 on the substrate W. [3 kn. C. By means of the second positioning member (with the interferometric member 基板, the substrate table The WT can be moved precisely, for example, to position different target portions C in the path of the beam pupil. Similarly, the first positioning member can be used, for example, after mechanically retracting the mask μα from a mask library or During the scan period The mask μα is accurately positioned relative to the path of the beam 。. Typically, the movement of the object table MT, WT is by means of a long stroke module (coarse positioning) and a short stroke module (fine positioning). Figure 4 does not explicitly show the U' in the wafer stepper (compared to the stepper scanning device), the mask table MT can be connected to only a short-stroke actuator or can be fixed. The device shown can be used for two Different modes: 1. In the step mode, the mask table MT remains substantially stationary, and a complete mask image is projected once (ie, single, "flash") on a target portion C. The substrate table WT is then Move in the X and / or 丫 direction so that a different target portion C can be irradiated by the beam PB. 2_ In the scan mode, basically the same scheme is used, however, a given target portion C is not exposed to a single - In "Flash", the mask can be attached at -13-

7820S-990714.DOC This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) 1332124 V. Invention description ( ) "--- - given direction (so-called "scanning direction", for example) Speed, moving 'so that the projection beam is four-scanned—masking the image; and 'the substrate stage wt is simultaneously moving at the speed ν=Μν in the same or opposite directions' the magnification of its tM-based lens PL (typically .1/4 Or 1/5). In this way, a relatively large target portion c can be exposed without sacrificing the degree of resolution. Figure 2 shows a schematic configuration of a device according to a first feature of the invention. The general operation is the same as that of the reference figure, so it will not be repeated. The device shown in Fig. 2 has a first radiation system — and a second radiation system i i which individually supply a first projected beam 4 of radiation and a second projected beam W of radiation. Each of the radiation systems jade and weir includes an element IL and may include an element as described above and as shown in FIG. The radiation system ^ does not need to be the same as 丨丨. For example, if the radiation system is produced by a single source, the optical path length between the source and the entrance of the second radiation system may not be equal, resulting in different projected beam profiles at these entrances. This difference may result in the necessity to use, for example, the beam expander of Figure 1, which is characterized by different beam expansion factors to compensate for the difference in the 245-Hail profile. However, typically the two radiation systems can be replicated substantially to each other. Each radiation system may include an adjustment member, such as element am of Figure 1 for setting values within σ and outside of σ, or an adjustable element such as for generating a multi-pole illumination mode. The adjustment of the first radiation system can be set differently than the adjustment of the second radiation system to individually optimize the lithography quality of the projected images of the first and second patterns independently of each other. The projected beams 4, 14 are individually patterned by the first mask 2 and the second mask 12 to produce patterned radiation beams 24,224. In the projection system 20, the -14-

78208-990714.DOC This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1332124

The first and second patterned radiation beams pass individually through the lenses 3, 13 and are combined in a polarization beam combiner 21 (which is a polarizing beam splitter, used in the opposite manner). The lenses 3 and 13 can be used individually to compensate (or _may-correct) the anomalies of the patterned beams 24, 224, the advantage of which is that the compensation (or correction) of the first patterned beam can be performed without affecting the second patterning. Light beam and vice versa. However, if this compensating member' is not required, the lenses 3 and 13 may be absent so that the polarized beam combiner is upstream of the frog mirror element 23 included in the projection system. In order to optimally utilize the beam combining properties of a polarized beam combiner (i.e., reduce the loss of conditioned energy), the electromagnetic radiation of patterned beams 24 and 224 is linearly polarized such that the electric field of beam 24 is substantially parallel to the map. The plane of 2 ("P polarization"), and the electric field of beam 224 is substantially perpendicular to the plane of Figure 2 ("s polarization"). The state of polarization of the patterned beam - an additional advantage occurs with the dipole illumination. When a two-pole exposure is performed using linearly polarized electromagnetic radiation, the inner electric field is substantially perpendicular to the axis connecting the two (primary) poles of the dipole pattern, and wherein the (four) is then substantially perpendicular to the mask imaged at the exposure. The feature 'The electric field will be substantially parallel to those features. This can greatly increase the efficiency of the exposure, and the image contrast of the "in particular" is greatly increased. See European Patent Application No. 0030852.9. However, it is preferred to change the state of polarization after the two patterned beams are combined. For example, a circularly polarized patterned beam may be less sensitive to the polarization-dependent imaging properties of the projection system. Therefore, the current embodiment provides a nine/four board 22 ("quarter wave plate") downstream of the polarized beam combiner. 78208-990714.DOC - 15 · This paper scale applies to the towel standard (CNS) A4 specification (21〇χ297 public love j -------- 1332124 A7 B7 V. Invention description ( ) Its main axis and The S and P polarization directions are at 45 degrees, and the plate converts the combined patterned beam into a substantially circularly polarized patterned beam 2224 before it passes through the remainder of the optical system 23 and is imaged onto the substrate 25. Radiation systems 1 and 1 1 may include (away or integrated) radiation sources that produce linearly polarized light. This may be utilized to induce the aforementioned S and p polarization states of the patterned beam. Also by placing in the first A linearly polarized filter of a suitable position of the second projected beam fixes the linearly polarized state. As shown in Fig. 3, the 'two masks 2, 12 are mounted on a combined mask stage 30. The first mask 2 is horizontal Installed in the first section 3〇a of the masking station, and the second mask 12 is straightened. The text is mounted on the second section 30b of the masking station. This allows the two masks to be scanned together, reducing - between exposures Risk of deviation. Single long-stroke actuators are used to drive the mask table 30, while independent short-stroke actuators are adjusted The position of each of the masks 2, 12 relative to the masking station 30. To ensure that (the exposure of the substrate is known to result in a single scanning speed due to the energy supplied by the two patterned beams), the exposure doses of the two exposures are each within tolerance, The various attenuators are part of the radiation system 1 and the enthalpy. With this variable attenuator, the exposure dose of the radiation applied to the target area of the substrate can be tuned independently of each other for the two patterned beams of the projected beam. The change in scanning speed will affect the exposure dose of each patterned projection beam in the same way. Since the second patterned projection beam is projected onto the substrate simultaneously with the first patterned projection beam, the mutual coherence between the two beams must be As low as possible to minimize interference between the two projected images. The concept of coherence involves the coherence length of the direction along which the person is propagating (hereafter referred to as "temporary coherence")

78208-990714.DOC

1332124 A7 ------ B7 V. Description of invention (14) '——-- Direction perpendicular to the direction of propagation (hereafter referred to as "space degree. Spatial coherence does not generally produce _, because the source _ = hair Laser or mercury arc lamps - typically produce light with low spatial coherence. Spatial coherence is typically - for example - low - so that for optical lithography, the phenomenon of speckle - which is directly related to spatial coherence is not a problem. Avoiding temporarily coherent hair strands 'In this embodiment, it is pre-conceived to use two independent sources of radiation'. One source is used for each radiation system. " In another embodiment, a polarized beam combiner plate splitter or A thin film spectroscope 'which acts as a beam combiner. A cube-shaped polarized beam combiner such as element 21 of Figure 2 is typically a two-sided assembly that is fused to a right-angled three (four) beveled surface (at least - with - at right angles) The dielectric on the beveled surface of the triangle, the beam is combined with the coating. The occurrence of this adhesion may cause problems such as instability caused by radiation shock and contamination caused by leakage of gas. In addition, the cube-shaped element The particular image deviation may be caused in the path through which the patterned beam traverses, which must be corrected (or at least minimized) in the projection system. The use of a plate beam combiner or thin film beam combiner can alleviate these problems. The bonder features a single parallel planar substrate that carries the beam combiner coating such that there is no optical bonding interface. Furthermore, the carrier substrate can be sufficiently thin (eg, the condition of the thin film beam combiner is on the order of microns) To avoid the occurrence of unacceptable optical aberrations. The lower-embodiment is shown in Figure 4. Here, the projected beams of radiation 4 and 14 individually supplied by the radiation system are produced by a single radiation surface LA. From source LA The projection beam 41 is divided by the beam splitter 212 and supplied to the radiation system 78208-990714.DOC _ -17- This paper size is used in the SS 豕 standard (CNS) A4 specification (21GX297 public) 1332124 A7

The first-projected beam 42 of the system 1 and the second projected beam 43 traverse the elements 213 and 214 and are supplied to the trajectory system 2. Elements 213 and 214 can, for example, be a folding mirror as shown in FIG. Due to the difference in the individual path lengths of the two beams between the beam splitter 212 and the patterning members 2, 12, it is a potentially detrimental effect, which is caused by the temporal coherence between the patterned beams 24 and 224 (in Figure 4). Caused. The beam splitter 212 can be a polarizing beam splitter (e.g., a polarizing plate beam splitter or a polarizing cube beam splitter). The fact that the excited laser typically produces linearly polarized light can then be utilized: by polarizing the polarization of the laser at 45 relative to the x, y direction. The angle of the beam splitter 212, as shown in Fig. 4, assigns 1> and § polarization to the projection beams 42 and 43 individually, and minimizes the loss of radiant energy. Furthermore, the use of linear polarization - as described above - can be avoided in this way. In another embodiment, the beam splitter 212 includes a plurality of beamsplitters 50 arranged in parallel, as shown in FIG. Each of the beamsplitters 5 is characterized by a ratio of the difference between the energy imparted to the transmitted beam and the energy imparted to the reflected beam. By moving the beam splitter 212 in a direction parallel to the beam splitting surface, the ratio of the exposure dose of the patterned radiation beam 24 to the patterned radiation beam 224 can be adjusted as indicated by the arrow 51 of FIG. 5, substantially without changing the combined pattern. The energy of the beam 2224. Given a single scan speed, the adjustment device can be used simultaneously to set the desired exposure dose for the two patterned beams. The use of a variable attenuator as described above can be avoided in this way. As a result, the amount of exposure agent required can be performed at a higher scanning speed. Although specific embodiments have been described above, it will be appreciated that the invention may be practiced otherwise than as described. This description is not intended to limit the invention.

78208-990714.DOC This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) Gutter 1332124 A7 B7 V. Invention description (Part symbol comparison table 1 First radiation system First radiation system 2,12 First And second masks first and second masks 3,13 Lenses lenses 4,14 Projection beams of radiation Radiation of the projected beam 11 Second radiation system Second radiation system 20 Projection system Projection system 21 Polarizing beam-combiner Polarized beam combiner 22 Plate plate 23 Lens element/optical system Lens element/optical system 24 > 224 Patterned radiation beams Patterned radiation beam 30 Mask table Mask table 30a, b First and second sections 41 Projection beam Projection beam 42 43 First and second projection beams First and second projection beams 212 Beam splitter beamsplitters 213, 214 Traverse elements Transverse elements 2224 Patterned beam AM Beaming elements Adjustment component C Target portion Target part CO Condenser Capacitor Ex Beam expan Der beam expander IL Illumination system/illuminator Irradiation system / illuminator LA Radiation source Radiation source -19-

78208-990714.DOC ¥ Paper size applicable 0® standard (CNS) A4 size (210X 297 mm) ' ------- 1332124 A7 B7 V. Invention description (17) MT Mask table/first object table Masking table / first object table MA Mask / reticle mask / main reticle PB Projection beam projection beam PL Projection system / projection lens projection system / projection lens W Substrate / wafer substrate / wafer WT Substrate table / second object table substrate Table / second object table 78208-990714.DOC - 20- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm)

Claims (1)

Year 6. Application Patent Range 曰 1. A lithography projection device comprising: a radiation system for supplying a projection beam of radiation; a support structure for supporting the patterned member, the pattern being configured according to what is desired a pattern for patterning the projection beam; a substrate for supporting a substrate; - a ^M^~e for projecting the patterned beam onto the substrate, characterized by further The method comprises: - a member for providing radiation - an auxiliary projection beam; wherein the support structure is further used for the support of the branch - the member of the aid member is patterned for use according to a pattern of the patterned member: a pattern patterning the auxiliary projected beam; and the two patterned projection beams are aligned with each other while being projected onto the substrate long-stroke actuation member for positioning the support structure; for the first neo-stroke actuation member, Positioning the patterned member in a support structure; - the second short-stroke actuation member is positioned in the support structure. The lithographic projection apparatus for the auxiliary patterning member, wherein the supporting sill supports a patterned member such that the main surface of each patterned member is substantially orthogonal to the other The main face of a patterned member. 3. A lithographic projection apparatus in which the system incorporates a second patterned beam, wherein the projection and projection of the combined beam is projected onto the base, as described in claim 1 or 2, wherein the combined beam is projected onto the base 78208-990714.DOC 1332124 A8 B8 C8 On the target part of the board. 4. The lithographic projection apparatus of claim 1 or 2, wherein the auxiliary projection beam is provided by an auxiliary radiation system. 5. The lithographic projection apparatus of claim 1 or 2, wherein the two projection beams are plane polarized beams. 6. The lithographic projection apparatus of claim 5, wherein the projection beams are combined using a polarized beam combiner. 7. The lithographic projection apparatus of claim 6, wherein the polarized beam combiner is part of the projection system; and the projection system comprises a λ/4 plate. 8. The lithographic projection apparatus of claim 1 or 2 of the patent scope is substantially irrelevant to each other. 9. If the lithography projection device of the third or second application of the patent scope is a mask. 10. If you apply for a patent scope! Or a lithographic projection device radiation system comprising: a ray source β 11 · a lithographic projection device according to claim 4, further comprising - a single light source for supplying a radiation beam to the radiation system And supplied to the auxiliary radiation system. A 12-component manufacturing method comprising the steps of: - providing a substrate at least partially covered by a layer of radiation-sensitive material; using a radiation system to provide a projected beam of radiation; - a supporting-patterning member - In the structure of the branch building, the illusion is used to give the projection beam a pattern on its cross section; wherein the two of the patterns are at least one of the binding lines 78208-990714.DOC -2· 1332124, and the patent application is applied. Projecting a light beam of the light-emitting beam onto a target portion of the radiation-sensitive material layer; characterized in that the method further comprises the following steps: "one of the radiation is used to assist the projection beam; = for the long stroke Moving the member and using it to define the sub-structure as a first short-stroke actuation member and using it to position the image deuteration member relative to the support structure; for the second short-stroke actuation member And using it to position the case member relative to the support structure; the auxiliary patterning member imparts the auxiliary projected beam to the support structure in its cross section Different patterns patterned member; and "μ pattern - the auxiliary pattern with the light beam emitted patterned light-sensitive material layer.叮Only on the spoke -3- 78208-990714.DOC This paper size applies to the Chinese National Standard (CNS) A4 specification (210x297 mm)