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TWI418139B - 高效率ｇ類放大器及其控制方法 - Google Patents

高效率ｇ類放大器及其控制方法 Download PDF

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Publication number
TWI418139B
TWI418139B TW098134273A TW98134273A TWI418139B TW I418139 B TWI418139 B TW I418139B TW 098134273 A TW098134273 A TW 098134273A TW 98134273 A TW98134273 A TW 98134273A TW I418139 B TWI418139 B TW I418139B
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signal
amplifier
error
negative voltage
voltage
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TW098134273A
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TW201114170A (en
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Jwin Yen Guo
Tsung Nan Wu
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Richtek Technology Corp
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Priority to US12/898,962 priority patent/US8310313B2/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244—Stepped control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45522—Indexing scheme relating to differential amplifiers the FBC comprising one or more potentiometers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45591—Indexing scheme relating to differential amplifiers the IC comprising one or more potentiometers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45594—Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Description

高效率G類放大器及其控制方法
本發明係有關一種G類放大器，特別是關於一種高效率且低成本的G類放大器。
例如美國專利號6,538,514所揭露的，傳統的G類放大器需要至少4組電源Vsph、Vspl、Vsmh及Vsml。G類放大器的功率效率越高，其需要的電源就越多，因此成本也越高。為了減少使用的電源，傳統的方法係利用接地電位當作負電源，然而此方法在切換電源時將使輸出共模電壓發生明顯的改變，進而導致失真。
近來的G類放大器係使用降壓式轉換器搭配電荷幫浦來提供可調電壓，進而同時達成減少硬體成本及改善效率的目的。如圖1所示，習知的G類放大器晶片10包括第一放大器16及18用以放大音頻輸入信號Vaudio，降壓式轉換器12將電壓AVDD轉換為電壓HPVDD給第一放大器16及18，電荷幫浦14將電壓HPVDD轉換為HPVSS給第一放大器16及18，以及音訊等級偵測器20偵測音頻輸入信號Vaudio並將偵測結果傳送給降壓式轉換器12以調節電壓HPVDD。然而，在G類放大器晶片10中，電荷幫浦14的最高效率與降壓式轉換器12的效率有相當大的差距，而且降壓式轉換器12的輸出HPVDD與電荷幫浦14的輸出HPVSS之間具有延遲，這些問題影響G類放大器晶片10的效率。此外，電荷幫浦14需要晶片外部的飛輪(flying)電容Cfly，這也使得成本提高。
因此，一種更有效率且成本更低的G類放大器，乃為所冀。
本發明的目的之一，在於提出一種高效率、低成本的G類放大器。
本發明的目的之一，在於提出一種高效率G類放大器的控制方法。
根據本發明，一種高效率G類放大器包括第一放大器放大供應至該G類放大器的音頻輸入信號，以及升壓反相電源轉換器連接該第一放大器，提供正電壓及負電壓給該第一放大器，並因應該音頻輸入信號調節該正電壓及負電壓。
根據本發明，一種高效率G類放大器的控制方法包括驅動升壓反相功率級，從輸入電壓產生正電壓及負電壓供應第一放大器，偵測音頻輸入信號以調節該正電壓及負電壓，以及該第一放大器放大該音頻輸入信號。
由於本發明的G類放大器不需要電荷幫浦，因此可以提高效率、降低成本。
圖2係根據本發明的G類放大器的實施例，其包括第一放大器34用以放大供應至G類放大器的音頻輸入信號Vaudio，升壓反相電源轉換器32耦接第一放大器34，用以將輸入電壓VDD轉換為正電壓rVDD及負電壓-rVDD給第一放大器34，以及音訊等級偵測器30耦接升壓反相電源轉換器32，用以偵測音頻輸入信號Vaudio產生偵測信號給升壓反相電源轉換器32，以調節正電壓rVDD及負電壓-rVDD。
圖3係圖2中升壓反相電源轉換器32的實施例，其只需要一個電源VDD便可產生正電壓rVDD及負電壓-rVDD。升壓反相電源轉換器32包括升壓反相功率級42將輸入電壓VDD轉換為正電壓rVDD及負電壓-rVDD，以及控制器40根據回授信號FBP及FBN以及來自音訊等級偵測器30的偵測信號產生控制信號SP及SN驅動升壓反相功率級42。在升壓反相功率級42中，開關SWN連接在輸入電壓端VDD及電感L之間，開關SWP連接在電感L及地端GND之間，二極體DN連接在輸出端-rVDD及電感L之間，二極體DP連接在電感L及輸出端rVDD之間，電容CN連接輸出端-rVDD，電容CP連接輸出端rVDD，電阻RN1及RN2串聯在輸出端-rVDD及地端GND之間分壓負電壓-rVDD產生回授信號FBN，電阻RP1及RP2串聯在輸出端rVDD及地端GND之間分壓正電壓rVDD產生回授信號FBP。圖4係升壓反相功率級42在升壓模式下的操作示意圖，當開關SWN及SWP皆閉路時，電感L儲能，當開關SWP開路時，二極體DP導通電流Idp對電容CP充電，因而使正電壓rVDD上升。圖5係升壓反相功率級42在反相模式下的操作示意圖，當開關SWN及SWP皆閉路時，電感L儲能，當開關SWN開路時，二極體DN導通電流Idn使電容CN放電，因而使負電壓-rVDD下降。
圖6係圖3中控制器40的實施例，其包括誤差放大器50放大回授信號FBP及來自音訊等級偵測器30的偵測信號V_det_P之間的差值產生誤差信號Vf1，比較器52比較誤差信號Vf1及鋸齒波信號Vramp1產生控制信號SP以決定正電壓rVDD，誤差放大器54放大回授信號FBN及來自音訊等級偵測器30的偵測信號V_det_N之間的差值產生誤差信號Vf2，以及比較器56比較誤差信號Vf2及鋸齒波信號Vramp2產生控制信號SN以決定負電壓-rVDD。參照圖6，當音頻輸入信號Vaudio的振幅改變時，偵測信號V_det_P及V_det_N隨之改變，因此誤差信號Vf1及Vf2的準位也將發生變化，使得控制信號SP及SN的時槽(time slot)改變。由於控制信號SP及SN的時槽分別決定開關SWP及SWN的開關時間，因此正電壓rVDD及負電壓-rVDD將隨音頻輸入信號Vaudio的振幅改變。
本發明的G類放大器不需要電荷幫浦，因此不會因電荷幫浦而使效率降低，而正電壓rVDD及負電壓-rVDD均由升壓反相電源轉換器32提供，因此正電壓rVDD及負電壓-rVDD之間沒有延遲，故本發明的G類放大器具有較高的效能。由於本發明不需要電荷幫浦14，因此可以減少飛輪電容Cfly，降低成本。
以上對於本發明之較佳實施例所作的敘述係為闡明之目的，而無意限定本發明精確地為所揭露的形式，基於以上的教導或從本發明的實施例學習而作修改或變化是可能的，實施例係為解說本發明的原理以及讓熟習該項技術者以各種實施例利用本發明在實際應用上而選擇及敘述，本發明的技術思想企圖由以下的申請專利範圍及其均等來決定。
10．．．G類放大器晶片
12．．．降壓式轉換器
14．．．電荷幫浦
16．．．第一放大器
18．．．第一放大器
20．．．音訊等級偵測器
30．．．音訊等級偵測器
32．．．升壓反相電源轉換器
34．．．第一放大器
40．．．控制器
42．．．升壓反相功率級
50．．．誤差放大器
52．．．比較器
54．．．誤差放大器
56．．．比較器
圖1係習知的G類放大器晶片；
圖2係本發明G類放大器的實施例；
圖3係圖2中升壓反相電源轉換器的實施例；
圖4係圖3中升壓反相功率級在升壓模式下的操作示意圖；
圖5係圖3中升壓反相功率級在反相模式下的操作示意圖；以及
圖6係圖3中控制器的實施例。
30．．．音訊等級偵測器
32．．．升壓反相電源轉換器
34．．．第一放大器

Claims (2)

  1. 一種高效率G類放大器，包括：第一放大器，放大供應至該G類放大器的音頻輸入信號；升壓反相電源轉換器連接該第一放大器，提供正電壓及負電壓給該第一放大器，並因應該音頻輸入信號調節該正電壓及負電壓，該升壓反相電源轉換器包含：升壓反相功率級連接該第一放大器，提供該正電壓及負電壓；以及控制器連接該升壓反相功率級，驅動該升壓反相功率級，並根據該音頻輸入信號調節該正電壓及負電壓；以及偵測器，偵測該音頻輸入信號產生第一及第二偵測信號給該控制器；其中，該控制器包含：第一誤差放大器連接該偵測器，放大該第一偵測信號及第一回授信號之間的差值產生第一誤差信號，該第一回授信號與該正電壓相關；第一比較器連接該第一誤差放大器及升壓反相功率級，比較該第一誤差信號及第一鋸齒波信號產生第一控制信號決定該正電壓；第二誤差放大器連接該偵測器，放大該第二偵測信號及第二回授信號之間的差值產生第二誤差信號，該第二回授信號與該負電壓相關；以及第二比較器連接該第二誤差放大器及升壓反相功率 級，比較該第二誤差信號及第二鋸齒波信號產生第二控制信號決定該負電壓。
  2. 一種高效率G類放大器的控制方法，該G類放大器包括第一放大器放大供應至該G類放大器的音頻輸入信號，該控制方法包括：驅動升壓反相功率級，從輸入電壓產生正電壓及負電壓供應該第一放大器；以及偵測該音頻輸入信號以調節該正電壓及負電壓；其中，該偵測該音頻輸入信號以調節該正電壓及負電壓的步驟包含：偵測該音頻輸入信號產生第一偵測信號及第二偵測信號；從該正電壓產生與其相關的第一回授信號；放大該第一偵測信號及第一回授信號之間的差值產生第一誤差信號；比較該第一誤差信號及第一鋸齒波信號產生第一控制信號決定該正電壓；從該負電壓產生與其相關的第二回授信號；放大該第二偵測信號及第二回授信號之間的差值產生第二誤差信號；以及比較該第二誤差信號及第二鋸齒波信號產生第二控制信號決定該負電壓。
TW098134273A 2009-10-09 2009-10-09 高效率ｇ類放大器及其控制方法 TWI418139B (zh)

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TW098134273A TWI418139B (zh) 2009-10-09 2009-10-09 高效率ｇ類放大器及其控制方法
US12/898,962 US8310313B2 (en) 2009-10-09 2010-10-06 Highly efficient class-G amplifier and control method thereof

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TW098134273A TWI418139B (zh) 2009-10-09 2009-10-09 高效率ｇ類放大器及其控制方法

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Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9112452B1 (en) 2009-07-14 2015-08-18 Rf Micro Devices, Inc. High-efficiency power supply for a modulated load
US9431974B2 (en) 2010-04-19 2016-08-30 Qorvo Us, Inc. Pseudo-envelope following feedback delay compensation
US9099961B2 (en) 2010-04-19 2015-08-04 Rf Micro Devices, Inc. Output impedance compensation of a pseudo-envelope follower power management system
US8981848B2 (en) 2010-04-19 2015-03-17 Rf Micro Devices, Inc. Programmable delay circuitry
US8519788B2 (en) * 2010-04-19 2013-08-27 Rf Micro Devices, Inc. Boost charge-pump with fractional ratio and offset loop for supply modulation
US8633766B2 (en) 2010-04-19 2014-01-21 Rf Micro Devices, Inc. Pseudo-envelope follower power management system with high frequency ripple current compensation
CN102971962B (zh) 2010-04-19 2016-05-25 射频小型装置公司 伪包络跟随功率管理系统
US8866549B2 (en) 2010-06-01 2014-10-21 Rf Micro Devices, Inc. Method of power amplifier calibration
WO2012027039A1 (en) 2010-08-25 2012-03-01 Rf Micro Devices, Inc. Multi-mode/multi-band power management system
CN101931375A (zh) * 2010-08-26 2010-12-29 成都芯源系统有限公司 具有高电源抑制比的放大电路
US9954436B2 (en) 2010-09-29 2018-04-24 Qorvo Us, Inc. Single μC-buckboost converter with multiple regulated supply outputs
WO2012068260A1 (en) 2010-11-16 2012-05-24 Rf Micro Devices, Inc. Digital gain multiplier for envelop tracking systems and corresponding method
US8588713B2 (en) 2011-01-10 2013-11-19 Rf Micro Devices, Inc. Power management system for multi-carriers transmitter
WO2012106437A1 (en) 2011-02-02 2012-08-09 Rf Micro Devices, Inc. Fast envelope system calibration
US8624760B2 (en) 2011-02-07 2014-01-07 Rf Micro Devices, Inc. Apparatuses and methods for rate conversion and fractional delay calculation using a coefficient look up table
CN103444076B (zh) 2011-02-07 2016-05-04 射频小型装置公司 用于功率放大器包络跟踪的群延迟校准方法
US9247496B2 (en) 2011-05-05 2016-01-26 Rf Micro Devices, Inc. Power loop control based envelope tracking
US9246460B2 (en) 2011-05-05 2016-01-26 Rf Micro Devices, Inc. Power management architecture for modulated and constant supply operation
US9379667B2 (en) 2011-05-05 2016-06-28 Rf Micro Devices, Inc. Multiple power supply input parallel amplifier based envelope tracking
CN103748794B (zh) 2011-05-31 2015-09-16 射频小型装置公司 一种用于测量发射路径的复数增益的方法和设备
US9019011B2 (en) 2011-06-01 2015-04-28 Rf Micro Devices, Inc. Method of power amplifier calibration for an envelope tracking system
US8760228B2 (en) 2011-06-24 2014-06-24 Rf Micro Devices, Inc. Differential power management and power amplifier architecture
US8952710B2 (en) 2011-07-15 2015-02-10 Rf Micro Devices, Inc. Pulsed behavior modeling with steady state average conditions
WO2013012787A2 (en) 2011-07-15 2013-01-24 Rf Micro Devices, Inc. Modified switching ripple for envelope tracking system
US8626091B2 (en) 2011-07-15 2014-01-07 Rf Micro Devices, Inc. Envelope tracking with variable compression
US9263996B2 (en) 2011-07-20 2016-02-16 Rf Micro Devices, Inc. Quasi iso-gain supply voltage function for envelope tracking systems
US8618868B2 (en) 2011-08-17 2013-12-31 Rf Micro Devices, Inc. Single charge-pump buck-boost for providing independent voltages
WO2013033700A1 (en) 2011-09-02 2013-03-07 Rf Micro Devices, Inc. Split vcc and common vcc power management architecture for envelope tracking
US8957728B2 (en) 2011-10-06 2015-02-17 Rf Micro Devices, Inc. Combined filter and transconductance amplifier
CN103988406B (zh) 2011-10-26 2017-03-01 Qorvo美国公司 射频(rf)开关转换器以及使用rf开关转换器的rf放大装置
US9024688B2 (en) 2011-10-26 2015-05-05 Rf Micro Devices, Inc. Dual parallel amplifier based DC-DC converter
US8878606B2 (en) 2011-10-26 2014-11-04 Rf Micro Devices, Inc. Inductance based parallel amplifier phase compensation
US9484797B2 (en) 2011-10-26 2016-11-01 Qorvo Us, Inc. RF switching converter with ripple correction
US9515621B2 (en) 2011-11-30 2016-12-06 Qorvo Us, Inc. Multimode RF amplifier system
US9250643B2 (en) 2011-11-30 2016-02-02 Rf Micro Devices, Inc. Using a switching signal delay to reduce noise from a switching power supply
US8975959B2 (en) 2011-11-30 2015-03-10 Rf Micro Devices, Inc. Monotonic conversion of RF power amplifier calibration data
US9256234B2 (en) 2011-12-01 2016-02-09 Rf Micro Devices, Inc. Voltage offset loop for a switching controller
US8947161B2 (en) 2011-12-01 2015-02-03 Rf Micro Devices, Inc. Linear amplifier power supply modulation for envelope tracking
US9280163B2 (en) 2011-12-01 2016-03-08 Rf Micro Devices, Inc. Average power tracking controller
WO2013082384A1 (en) 2011-12-01 2013-06-06 Rf Micro Devices, Inc. Rf power converter
US9041365B2 (en) 2011-12-01 2015-05-26 Rf Micro Devices, Inc. Multiple mode RF power converter
US9494962B2 (en) 2011-12-02 2016-11-15 Rf Micro Devices, Inc. Phase reconfigurable switching power supply
US9813036B2 (en) 2011-12-16 2017-11-07 Qorvo Us, Inc. Dynamic loadline power amplifier with baseband linearization
US9298198B2 (en) 2011-12-28 2016-03-29 Rf Micro Devices, Inc. Noise reduction for envelope tracking
US9065413B2 (en) 2012-01-25 2015-06-23 Texas Instruments Incorporated Method and apparatus for circuit with low IC power dissipation and high dynamic range
US8981839B2 (en) 2012-06-11 2015-03-17 Rf Micro Devices, Inc. Power source multiplexer
CN104662792B (zh) 2012-07-26 2017-08-08 Qorvo美国公司 用于包络跟踪的可编程rf陷波滤波器
US9225231B2 (en) 2012-09-14 2015-12-29 Rf Micro Devices, Inc. Open loop ripple cancellation circuit in a DC-DC converter
US9197256B2 (en) 2012-10-08 2015-11-24 Rf Micro Devices, Inc. Reducing effects of RF mixer-based artifact using pre-distortion of an envelope power supply signal
US9207692B2 (en) 2012-10-18 2015-12-08 Rf Micro Devices, Inc. Transitioning from envelope tracking to average power tracking
US9627975B2 (en) 2012-11-16 2017-04-18 Qorvo Us, Inc. Modulated power supply system and method with automatic transition between buck and boost modes
US11128261B2 (en) 2012-12-28 2021-09-21 Psemi Corporation Constant Vds1 bias control for stacked transistor configuration
US9667195B2 (en) 2012-12-28 2017-05-30 Peregrine Semiconductor Corporation Amplifiers operating in envelope tracking mode or non-envelope tracking mode
US9716477B2 (en) 2012-12-28 2017-07-25 Peregrine Semiconductor Corporation Bias control for stacked transistor configuration
WO2014116933A2 (en) 2013-01-24 2014-07-31 Rf Micro Devices, Inc Communications based adjustments of an envelope tracking power supply
US9178472B2 (en) 2013-02-08 2015-11-03 Rf Micro Devices, Inc. Bi-directional power supply signal based linear amplifier
WO2014152903A2 (en) 2013-03-14 2014-09-25 Rf Micro Devices, Inc Envelope tracking power supply voltage dynamic range reduction
WO2014152876A1 (en) 2013-03-14 2014-09-25 Rf Micro Devices, Inc Noise conversion gain limited rf power amplifier
US9479118B2 (en) 2013-04-16 2016-10-25 Rf Micro Devices, Inc. Dual instantaneous envelope tracking
US9374005B2 (en) 2013-08-13 2016-06-21 Rf Micro Devices, Inc. Expanded range DC-DC converter
US9614476B2 (en) 2014-07-01 2017-04-04 Qorvo Us, Inc. Group delay calibration of RF envelope tracking
JP2016086616A (ja) * 2014-10-29 2016-05-19 株式会社アイケイエス 電力変換器
CN109067365B (zh) * 2014-12-30 2022-08-12 天工方案公司 具有可变供电电压的功率放大系统
US9912297B2 (en) 2015-07-01 2018-03-06 Qorvo Us, Inc. Envelope tracking power converter circuitry
US9941844B2 (en) 2015-07-01 2018-04-10 Qorvo Us, Inc. Dual-mode envelope tracking power converter circuitry
US9973147B2 (en) 2016-05-10 2018-05-15 Qorvo Us, Inc. Envelope tracking power management circuit
CN106535052B (zh) * 2016-12-30 2022-09-02 深圳市安耐科电子技术有限公司 一种音频自适应升压电路、boost芯片及音频设备
WO2018128937A1 (en) * 2017-01-06 2018-07-12 Avnera Corporation Power supply for class g amplifier
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
US10476437B2 (en) 2018-03-15 2019-11-12 Qorvo Us, Inc. Multimode voltage tracker circuit
NL2024272B1 (en) * 2019-11-20 2021-08-18 Axign B V Booster stage circuit for power amplifier
US20230231523A1 (en) * 2022-01-14 2023-07-20 Mediatek Inc. Power converter and associated control method for high-efficiency audio amplifier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409559A (en) * 1980-03-26 1983-10-11 Hitachi, Ltd. Supply voltage controlled stereophonic amplifier system
TW480810B (en) * 1999-10-14 2002-03-21 Tropian Inc High efficiency line driver for high crest-factor signals such as DMT/ADSL signals

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604151B2 (en) * 2007-03-15 2009-10-20 Ethicon Endo-Surgery, Inc. Surgical stapling systems and staple cartridges for deploying surgical staples with tissue compression features
US7741914B1 (en) * 2008-12-10 2010-06-22 Texas Instruments Incorporated Amplifier system with dynamically-adjusted supply voltage
US8072266B1 (en) * 2009-05-07 2011-12-06 National Semiconductor Corporation Class G amplifier with improved supply rail transition control

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409559A (en) * 1980-03-26 1983-10-11 Hitachi, Ltd. Supply voltage controlled stereophonic amplifier system
TW480810B (en) * 1999-10-14 2002-03-21 Tropian Inc High efficiency line driver for high crest-factor signals such as DMT/ADSL signals

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