TWI866712B - Heat dissipation structure and electronic package thereof - Google Patents
Heat dissipation structure and electronic package thereof Download PDFInfo
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- TWI866712B TWI866712B TW112150081A TW112150081A TWI866712B TW I866712 B TWI866712 B TW I866712B TW 112150081 A TW112150081 A TW 112150081A TW 112150081 A TW112150081 A TW 112150081A TW I866712 B TWI866712 B TW I866712B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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Abstract
Description
本發明涉及一種半導體封裝結構,尤指一種散熱結構及其電子封裝件。 The present invention relates to a semiconductor packaging structure, in particular to a heat dissipation structure and its electronic packaging component.
隨著電子產品在功能及處理速度之需求的提升,作為電子產品之核心組件的半導體晶片需具有更高密度之電子元件(Electronic Components)及電子電路(Electronic Circuits),故半導體晶片在運作時將隨之產生更大量的熱能。 As the demand for electronic products in terms of functions and processing speed increases, semiconductor chips, as the core components of electronic products, need to have higher density electronic components and electronic circuits, so semiconductor chips will generate more heat during operation.
因此,為了迅速將熱能散逸至外部,業界通常在半導體封裝件中配置散熱片(Heat Sink或Heat Spreader),該散熱片通常藉由例如導熱介面材(Thermal Interface Material,TIM)之散熱體結合至晶片背面,以藉散熱體與散熱片逸散出半導體晶片所產生之熱量。 Therefore, in order to quickly dissipate heat to the outside, the industry usually configures a heat sink or heat spreader in the semiconductor package. The heat sink is usually combined with the back of the chip through a heat sink such as a thermal interface material (TIM) to dissipate the heat generated by the semiconductor chip through the heat sink and the heat spreader.
如圖1所示,習知半導體封裝件1之製法先將一半導體晶片11以其作用面11a利用覆晶接合方式(即透過導電凸塊110與底膠111)設於一封裝基板10上,再將一散熱件13以其頂片130藉由散熱體12結合於該半導體晶片11之非作用面11b上,且該散熱件13之支撐腳131透
過黏著層14架設於該封裝基板10上。於運作時,該半導體晶片11所產生之熱能經由該非作用面11b、散熱體12而傳導至該散熱件13之頂片130以散熱至該半導體封裝件1之外部。
As shown in FIG. 1 , the manufacturing method of the known
然而,隨著該半導體晶片11之功能需求愈來愈多,其接點(I/O)數也愈來愈多,且所產生之熱能也越來越高,一般為金屬銅材質所製得之散熱件13已無法因應高散熱需求。
However, as the functional requirements of the
因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the above-mentioned problems of knowledge and technology has become an urgent issue to be solved.
鑑於上述習知技術之種種缺失,本發明提供一種散熱結構,用於電子封裝件,該散熱結構包括:板體,設於該電子封裝件之發熱源上,其內部形成腔室,其中,該板體以金屬與非金屬複合材料所製成;以及工作流體,容置於該腔室中,藉由該發熱源產生之熱能而在氣態與液態之間變換。 In view of the various deficiencies of the above-mentioned prior art, the present invention provides a heat dissipation structure for electronic packaging, the heat dissipation structure comprising: a plate body, which is arranged on the heat source of the electronic packaging, and a chamber is formed inside the plate body, wherein the plate body is made of a metal and non-metal composite material; and a working fluid, which is contained in the chamber and changes between gas and liquid by the heat energy generated by the heat source.
如前述之散熱結構中,該金屬為銅、鋁、不鏽鋼或其組合。 In the aforementioned heat dissipation structure, the metal is copper, aluminum, stainless steel or a combination thereof.
如前述之散熱結構中,該非金屬為石墨烯、鑽石或其組合。 In the aforementioned heat dissipation structure, the non-metal is graphene, diamond or a combination thereof.
如前述之散熱結構中,該板體包含上蓋及下蓋,該上蓋及該下蓋相互組配以於其間形成該腔室。 As in the aforementioned heat dissipation structure, the plate body includes an upper cover and a lower cover, and the upper cover and the lower cover are assembled with each other to form the chamber therebetween.
如前述之散熱結構中,更包含毛細結構,設於該下蓋上並位於該腔室中。 The aforementioned heat dissipation structure further includes a capillary structure disposed on the lower cover and located in the chamber.
如前述之散熱結構中,更包含複數支撐柱,設於該上蓋上並位於該腔室中,且抵接該毛細結構。 As in the aforementioned heat dissipation structure, a plurality of supporting columns are further included, which are arranged on the upper cover and located in the chamber and abut against the capillary structure.
如前述之散熱結構中,更包括支撐腳,係結合該下蓋,以供設於該電子封裝件上。 The aforementioned heat dissipation structure further includes a supporting foot that is combined with the lower cover for being installed on the electronic package.
如前述之散熱結構中,該支撐腳為環狀或柱狀。 As in the aforementioned heat dissipation structure, the supporting foot is ring-shaped or column-shaped.
本發明更提供一種電子封裝件,包括:線路結構,具有相對之第一側與第二側;電子元件,配置於該線路結構之該第一側上;以及如前述之散熱結構,配置於該電子元件上。 The present invention further provides an electronic package, comprising: a circuit structure having a first side and a second side opposite to each other; an electronic component disposed on the first side of the circuit structure; and a heat dissipation structure as described above, disposed on the electronic component.
如前述之電子封裝件中,更包括導電元件,配置於該線路結構之該第二側上。 The aforementioned electronic package further includes a conductive element disposed on the second side of the circuit structure.
綜上所述,本發明散熱結構以金屬與非金屬複合材料所製成,可具有高強度特性而能降低整體散熱片厚度,以及具有低密度特性而能降低重量,更具有高導熱特性而能提昇散熱能力,以供將該散熱結構結合於封裝件之電子元件上,有效因應高散熱需求。 In summary, the heat dissipation structure of the present invention is made of metal and non-metal composite materials, which can have high strength characteristics to reduce the thickness of the overall heat sink, low density characteristics to reduce weight, and high thermal conductivity characteristics to improve heat dissipation capabilities, so that the heat dissipation structure can be combined with the electronic components of the package to effectively meet high heat dissipation requirements.
1:半導體封裝件 1:Semiconductor packages
10:封裝基板 10:Packaging substrate
11:半導體晶片 11: Semiconductor chip
11a,31a:作用面 11a,31a: Action surface
11b,31b:非作用面 11b,31b: non-active surface
110,310:導電凸塊 110,310: Conductive bump
111:底膠 111: Base glue
12,32:散熱體 12,32: Heat sink
13:散熱件 13: Heat sink
130:頂片 130: Top piece
131:支撐腳 131: Support your feet
14,34:黏著層 14,34: Adhesive layer
2:散熱結構 2: Heat dissipation structure
20:板體 20: Board
21:下蓋 21: Lower cover
21a,22a:內表面 21a, 22a: Inner surface
21b,22b:外表面 21b, 22b: outer surface
22:上蓋 22: Upper cover
23:腔室 23: Chamber
24:毛細結構 24: Capillary structure
25:支撐柱 25: Support column
26:支撐腳 26: Support your feet
3:電子封裝件 3: Electronic packaging components
30:線路結構 30: Circuit structure
30a:第一側 30a: First side
30b:第二側 30b: Second side
301:絕緣層 301: Insulation layer
302:線路層 302: Circuit layer
31:電子元件 31: Electronic components
311:絕緣材 311: Insulation material
33:導電元件 33: Conductive element
圖1為為習知半導體封裝件之剖面示意圖。 Figure 1 is a schematic cross-sectional view of a conventional semiconductor package.
圖2為本發明散熱結構之剖面示意圖。 Figure 2 is a cross-sectional schematic diagram of the heat dissipation structure of the present invention.
圖3為本發明電子封裝件之剖面示意圖。 Figure 3 is a schematic cross-sectional view of the electronic package of the present invention.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following is a specific and concrete example to illustrate the implementation of the present invention. People familiar with this technology can easily understand other advantages and effects of the present invention from the content disclosed in this manual.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. depicted in the drawings attached to this specification are only used to match the contents disclosed in the specification for understanding and reading by people familiar with this technology, and are not used to limit the restrictive conditions for the implementation of the present invention. Therefore, they have no substantial technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the effects and purposes that can be achieved by the present invention. At the same time, the terms such as "above", "first", "second" and "one" used in this specification are only used to facilitate the clarity of the description, and are not used to limit the scope of implementation of the present invention. Changes or adjustments to their relative relationships, without substantially changing the technical content, should also be regarded as the scope of implementation of the present invention.
圖2為本發明散熱結構2之剖面示意圖,該散熱結構2可為均溫板(Vapor Chamber)形式,其包括板體20、腔室23、毛細結構24及複數支撐柱25。
FIG2 is a schematic cross-sectional view of the
板體20包含下蓋21及上蓋22。下蓋21具有相對之內表面21a及外表面21b,上蓋22具有相對之內表面22a及外表面22b。下蓋21及上蓋22能以內表面21a、22a相對應的方向相互組配,經結合後以於在下蓋21及上蓋22之間形成腔室23。
The
本實施例中,在腔室23抽真空後注入有工作流體且容置於其中,而工作流體可為水、冷卻液、甲醇、丙酮、汞等,其在吸收熱能後可
相變為氣態,冷卻後可相變為液態。在實際運作時,工作液體在腔室23中可同時呈現出氣態與液態共存的情況。
In this embodiment, after the
在本實施例中,板體20是以金屬與非金屬複合材料所製成。
In this embodiment, the
於一實施例中,該金屬為銅(楊氏模數0.13TPa、密度8.9g/cm3、熱傳導率400W/m.k)、鋁(楊氏模數0.07TPa、密度2.7g/cm3、熱傳導率315W/m.k)、不鏽鋼(楊氏模數0.19TPa、密度7.9g/cm3、熱傳導率16.3W/m.k)或其組合,該非金屬為石墨烯(楊氏模數1TPa、密度0.22g/cm3、熱傳導率5300W/m.k)、鑽石(楊氏模數1.2TPa、密度3.5g/cm3、熱傳導率2300W/m.k)或其組合,但本發明並不以此為限。 In one embodiment, the metal is copper (Young's modulus 0.13TPa, density 8.9g/ cm3 , thermal conductivity 400W/mk), aluminum (Young's modulus 0.07TPa, density 2.7g/ cm3 , thermal conductivity 315W/mk), stainless steel (Young's modulus 0.19TPa, density 7.9g/ cm3 , thermal conductivity 16.3W/mk) or a combination thereof, and the non-metal is graphene (Young's modulus 1TPa, density 0.22g/ cm3 , thermal conductivity 5300W/mk), diamond (Young's modulus 1.2TPa, density 3.5g/ cm3 , thermal conductivity 2300W/mk) or a combination thereof, but the present invention is not limited thereto.
毛細結構24設置於下蓋21之內表面21a上並位於腔室23中,用以吸附液態的工作流體。
The
在本實施例中,毛細結構24可以是纖維(Fiber)、顆粒燒結體或金屬網體,其中,顆粒燒結體是指以金屬粉末(例如銅)燒結所形成之具有多個毛細孔或相連通孔洞的組織或結構,金屬網體則是指以金屬(例如銅)編織成之具有多個網目的編織網,但本發明並不以上述為限。
In this embodiment, the
複數支撐柱25設置於上蓋22之內表面22a上且彼此相間隔,並位於腔室23中,於下蓋21及上蓋22相互組配,複數支撐柱25抵接毛細結構24。
A plurality of supporting
在本實施例中,複數支撐柱25以平均分佈的方式形成於上蓋22之內表面22a,彼此間具有一定間距,以平均支撐上蓋22,避免上蓋22的中央部分凹陷。
In this embodiment, a plurality of
於一實施例中,複數支撐柱25可以是圓柱體。在其他實施例中,複數支撐柱25也可以是方柱體或長條形。複數支撐柱25亦可以不規則分佈的方式形成於上蓋22之內表面22a,例如針對壓力集中區域來集中設置支撐柱25。
In one embodiment, the plurality of
於一實施例中,上蓋22與複數支撐柱25可一體成形,也就是複數支撐柱25之材料可相同於上蓋22。
In one embodiment, the
圖3為本發明電子封裝件3之剖面示意圖,電子封裝件3包括上述圖2之散熱結構2、線路結構30、電子元件31及導電元件33。
FIG3 is a schematic cross-sectional view of the
線路結構30例如為具核心層或無核心層(coreless)形式之基板,其包含至少一絕緣層301及至少一結合該絕緣層301之線路層302,並具有相對之第一側30a與第二側30b。
The
又,形成該線路層302之材質為銅,且形成該絕緣層301之材質例如為聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等介電材或最外側層可為綠漆之防銲材。
In addition, the material forming the
電子元件31藉由複數導電凸塊310接置於該線路結構30之第一側30a上,以令電子元件31電性連接線路層302。
The
於本實施例中,電子元件31為主動元件、被動元件或其組合者,該主動元件例如為半導體晶片,而該被動元件例如為電阻、電容及電感。例如,該電子元件31為半導體晶片,其具有相對之作用面31a與非作用面31b,該作用面31a具有複數電極墊,以藉由複數如銲錫材料、金屬柱(pillar)或其它等之導電凸塊310利用覆晶方式設於該線路結構30之
第一側30a之線路層302上並電性連接該線路層302,且以底膠或非導電底部填充薄膜(NCF)等絕緣材311包覆該些導電凸塊310;亦或,該電子元件31可直接電性接觸該線路結構30之第一側30a之線路層302。因此,有關電子元件31電性連接該線路結構30之方式繁多,並不限於上述。
In this embodiment, the
散熱結構2以其下蓋21之外表面21b經由散熱體32配置於電子元件31之非作用面31b上,以令電子元件31作為發熱源而將熱能傳遞至板體20及其內之工作流體,同時藉由支撐腳26結合至線路結構30之第一側30a上。
The
在本實施例中,散熱體32可例如為導熱介面材(Thermal Interface Material,簡稱TIM)、銲錫材、金屬材或其它導熱材料。
In this embodiment, the
在本實施例中,支撐腳26以黏著層34結合於線路結構30之第一側30a與下蓋21之外表面21b,並環繞電子元件31而設置。於一實施例中,支撐腳26可以是環狀,但本發明並不以此為限,支撐腳26也可以是柱狀,例如二柱體分別位於電子元件31的相對二側,或是四柱體分別位於電子元件31的四個角落。
In this embodiment, the
於一實施例中,支撐腳26可與下蓋21為一體成形,也就是支撐腳26之材料可相同於下蓋21。
In one embodiment, the
導電元件33可例如為銲錫凸塊,配置於線路結構30之第二側30b上,並電性連接線路層302。
The
本發明散熱結構2的運作情形如下。電子元件31(發熱源)所產生之熱能經由散熱體32傳遞至下蓋21,在毛細結構24中的工作流體(液態)吸收熱能變化成氣態,並往上蓋22方向及複數支撐柱25之間的
腔室23移動。氣態之工作流體經與外部交換熱能後冷卻,並冷凝成液態,液態之工作流體將往下蓋21方向移動並由毛細結構24所吸收,以進行下一次散熱循環。
The operation of the
綜上所述,本發明散熱結構以金屬與非金屬複合材料所製成,可具有高強度特性而能降低整體散熱片厚度,以及具有低密度特性而能降低重量,更具有高導熱特性而能提昇散熱能力,以供將該散熱結構結合於封裝件之電子元件上,有效因應高散熱需求。 In summary, the heat dissipation structure of the present invention is made of metal and non-metal composite materials, which can have high strength characteristics to reduce the thickness of the overall heat sink, low density characteristics to reduce weight, and high thermal conductivity characteristics to improve heat dissipation capabilities, so that the heat dissipation structure can be combined with the electronic components of the package to effectively meet high heat dissipation requirements.
上述實施例用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to illustrate the principles and effects of the present invention, but are not used to limit the present invention. Anyone familiar with this technology can modify the above embodiments without violating the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be as listed in the scope of the patent application described below.
2:散熱結構 2: Heat dissipation structure
20:板體 20: Board
21:下蓋 21: Lower cover
21a,22a:內表面 21a, 22a: Inner surface
21b,22b:外表面 21b, 22b: outer surface
22:上蓋 22: Upper cover
23:腔室 23: Chamber
24:毛細結構 24: Capillary structure
25:支撐柱 25: Support column
26:支撐腳 26: Support your feet
3:電子封裝件 3: Electronic packaging components
30:線路結構 30: Circuit structure
30a:第一側 30a: First side
30b:第二側 30b: Second side
301:絕緣層 301: Insulation layer
302:線路層 302: Circuit layer
31:電子元件 31: Electronic components
31a:作用面 31a: Action surface
31b:非作用面 31b: Non-active surface
310:導電凸塊 310: Conductive bump
311:絕緣材 311: Insulation material
32:散熱體 32: Heat sink
33:導電元件 33: Conductive element
34:黏著層 34: Adhesive layer
Claims (8)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112150081A TWI866712B (en) | 2023-12-21 | 2023-12-21 | Heat dissipation structure and electronic package thereof |
| CN202410043916.9A CN120199734A (en) | 2023-12-21 | 2024-01-11 | Heat dissipation structure and electronic packaging thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112150081A TWI866712B (en) | 2023-12-21 | 2023-12-21 | Heat dissipation structure and electronic package thereof |
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| TWI866712B true TWI866712B (en) | 2024-12-11 |
| TW202527302A TW202527302A (en) | 2025-07-01 |
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| TW (1) | TWI866712B (en) |
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2023
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| US20130344659A1 (en) * | 2005-09-30 | 2013-12-26 | Daoqiang Lu | Microelectronic package having direct contact heat spreader and method of manufacturing same |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN120199734A (en) | 2025-06-24 |
| TW202527302A (en) | 2025-07-01 |
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