TWM464459U - Gas distribution device for metal organic chemical vapor deposition reactor and reactor thereof - Google Patents

Abstract

The utility model provides a gas distributing device for a metal organic chemical gas phase deposition reaction device and the reaction device. The gas distributing device comprises a temperature control plate and a gas distributing plate which are sequentially overlaid and connected with each other, wherein the temperature control plate and the gas distributing plate are fixedly connected through a detachable fixing device, and the temperature control plate and the gas distributing plate are respectively provided with a plurality of channels in advance. After the temperature control plate and the gas distribution plate are connected with each other, the plurality of the channels are communicated with each other to form a plurality of first gas distributing channels and a plurality of second gas distributing channels, and the first gas distributing channels and the second gas distributing channels are mutually isolated. The plurality of the first gas distributing channels are communicated with a first reaction gas source, and the plurality of the second gas distributing channels are communicated with a second reaction gas source. A cooling cavity connected with a cooling source is arranged on the temperature control plate.

Description

Gas distribution device and reactor for metal organic chemical vapor deposition reactor

The present invention relates to a reactor for growing a film of a Group III element and a Group V element compound, and more particularly to a gas distribution device and a related reactor for a metal organic chemical vapor deposition reactor.

Gallium Nitride (GaN) is a widely used material for the manufacture of blue, violet and white light diodes, UV detectors and high power microwave transistors. The growth of GaN thin films has received great attention due to the practical and potential use of GaN in the fabrication of low energy devices (eg, LEDs) suitable for a wide range of applications.

GaN thin films can be grown in a variety of different ways, including molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), metal organic chemical vapor deposition (MOCVD), and the like. Currently, the MOCVD method is a preferred deposition method for obtaining a film of sufficient quality for the production of LEDs.

The MOCVD process is typically carried out in a reaction chamber or reaction chamber in a temperature controlled environment. Typically, a first precursor gas comprising a Group III element (eg, gallium (Ga)) and a second precursor gas containing nitrogen (eg, ammonia (NH ₃ )) are introduced into the reaction chamber for reaction on the substrate. A crystalline GaN film is formed. A carrier gas can also be used to assist in transporting the precursor gas above the substrate. These precursor gases are mixed and reacted on the surface of the heated substrate to form a Group III nitride film (e.g., a GaN thin film) deposited on the surface of the substrate and form a crystalline epitaxial layer.

The foregoing first precursor gas second precursor gas needs to be pressed when reaching the substrate The ratio is uniformly mixed, but the first precursor gas and the second precursor gas cannot be mixed prematurely, because the space above the substrate is also highly irradiated because the substrate is heated to the reaction temperature (usually greater than 1000 ° C), so The mixed gas of the two reaction gases can also react in other spaces having a sufficiently high temperature to form a crystalline solid. This crystalline solid will become contaminated by the diffusion of the gas stream without forming crystalline GaN on the substrate. Conventional MOCVD reaction gas supply forms are various, including a plurality of gas level gas supply methods, such as the gas containing group V elements and group III elements shown in the prior art US 5,370,738, which are mixed in a space close to the substrate through channels of different layers. It flows through the surface of the substrate and is drawn away at the other end of the substrate. There is a significant problem with the gas supply by this method: the mixed gas flows upstream and downstream of the substrate, and if the gas mixing degree is different, the composition of the reaction gas is different, which causes the deposition uniformity of the entire substrate surface to be lowered.

In order to solve this problem, Thomas Swan proposed a method of supplying air by using a shower head close to the substrate. As shown in the patent EP0687749, the basic surface uniform treatment can be basically achieved by this method, but it is uniform on the entire reaction surface. The different reaction gases are supplied to the ground, and the two precursor gases are isolated from each other before reaching the reaction zone, so the structure of the gas shower head is very complicated and difficult to manufacture, and maintenance and cleaning in use are also very difficult.

CN10167849 proposes a laminated gas shower head structure, wherein each gas distribution plate comprises a plurality of mutually isolated cavities, and the multi-layer gas shower head components are pressure-welded at a high temperature to form a whole body to form a complete function gas. Sprinkler. The sprinkler of this structure still has irreparable defects in industrial applications. Since the gas distribution plates are pressure-welded, the gas shower head undergoes a telescopic process in each high temperature processing loop for a long time. After the operation, crosstalk will inevitably occur between different gas pipelines, and a chemical reaction will form a deposit under the high-temperature radiation of the substrate to contaminate the gas pipeline. Moreover, since the entire gas shower head is integrally welded together, these contaminants are difficult to be cleaned, which seriously affects the effect of subsequent treatment.

Therefore, the industry needs a way to achieve even air supply throughout the reaction surface, but also A gas showerhead that prevents cross-talk of different reactant gases before entering the reaction zone, and the gas showerhead is easy to manufacture and maintain.

Therefore, the main purpose of the present invention is to provide a gas distribution device and related reaction that can achieve uniform gas supply on the entire surface of the reaction substrate while preventing cross-talk of different reaction gases before entering the reaction zone. And the gas distribution device is easy to manufacture and maintain, and the cost of the user is greatly saved.

The technical means for solving the problems of the prior art is a gas distribution device of a metal organic chemical vapor deposition reactor, comprising: a temperature control plate and a gas distribution plate connected to each other, wherein the gas distribution plate And the temperature control plate is fixedly connected by a detachable fixing device; the gas distribution plate includes a plurality of first gas distribution channels and a plurality of second gas distribution channels separated from each other, and the plurality of first gas distribution channels and a first reaction gas source is in communication, the plurality of second gas distribution channels are in communication with a second reaction gas source, and the plurality of first and second gas distribution channels form a plurality of gas ejection ports on a lower surface of the gas distribution plate; A plurality of channels are respectively arranged on the temperature control plate corresponding to and connected to a plurality of gas ejection port positions on the lower surface of the gas distribution plate; and the temperature control plate is further provided with a cooling cavity connected to the cooling source.

In an embodiment of the present invention, the temperature control plate includes an upper surface and a lower surface, the lower surface is adjacent to a reaction zone of the reactor, and the first reactive gas source and the second reactive gas The source escapes from the lower surface and enters the reaction zone.

In an embodiment of the present invention, the gas distribution plate includes a first gas distribution plate and a second gas distribution plate that are stacked, the second gas distribution plate is located above the first gas distribution plate, and the first gas distribution plate And the second gas distribution plate is fixedly connected by the detachable fixing device.

In an embodiment of the present creation, the gas distribution plate includes the plurality of a first gas distribution channel or a gas diffusion space in which the plurality of second gas distribution channels are in communication.

In an embodiment of the present creation, a plurality of channels on the temperature control plate extend through the upper surface and the lower surface.

In an embodiment of the present invention, the gas distribution device further includes an airtight plate adjacent to and connected to the second gas distribution plate, and the airtight plate is provided with the plurality of first gases A gas diffusion space in which the distribution channels communicate with each other.

In an embodiment of the present invention, the airtight plate and the gas distribution plate are fixedly connected by a detachable fixing device.

In an embodiment of the present creation, the detachable fixing device is a bolt or a screw.

In an embodiment of the present invention, after the temperature control plate and the gas distribution plate are fixedly connected by the detachable fixing device, the peripheral portion of the surface of the temperature control plate has a gap to the lower surface of the gas distribution plate at room temperature.

In an embodiment of the present invention, there is a gap between the surface of the temperature control plate and the lower surface of the gas distribution plate, and the gap of the peripheral area is smaller than the gap of the central area.

In an embodiment of the present invention, the temperature control plate includes an upper surface, and the upper surface has an arc shape.

Another technical means employed by the present invention to solve the problems of the prior art is a metal organic chemical vapor deposition reactor comprising the gas distribution device described above.

The specific embodiments of the present invention will be further described by the following examples and accompanying drawings.

100‧‧‧reactor

1‧‧‧First gas passage

10‧‧‧Second gas distribution plate

10', 10" ‧ ‧ airtight panels

101, 101a, 101b, 101c, 101d‧‧‧ gas distribution devices

1020‧‧‧ gas distribution board

1021‧‧‧First gas distribution channel

1022‧‧‧Second gas distribution channel

1024‧‧‧Fixed holes

103‧‧‧ heating device

104‧‧‧Substrate base

105‧‧‧Substrate

11‧‧‧ channel

110’‧‧‧Diffuse trench

120, 120’‧‧‧ trench

14‧‧‧Fixed holes

2‧‧‧second gas passage

20‧‧‧First gas distribution plate

20a‧‧‧ upper surface

20b‧‧‧ lower surface

21‧‧‧ channel

22‧‧‧ channel

230‧‧‧ trench

24‧‧‧Axis

30‧‧‧temperature control board

30a‧‧‧ upper surface

30b‧‧‧lower surface

31‧‧‧ channel

32‧‧‧ channel

33‧‧‧Cooling pipe

34‧‧‧Fixed holes

4‧‧‧ bolt

41‧‧‧First gas source

42‧‧‧second gas source

43‧‧‧ Pipes

44‧‧‧ Pipes

5‧‧‧ Pipes

50‧‧‧ Cooling source

60‧‧‧diffusion chamber

1 is a schematic view of a metal organic chemical vapor deposition reactor using the gas distribution device provided by the present creation; FIG. 2 is a view showing the configuration of a gas distribution device according to the first embodiment of the present invention; 3 is an assembled structural view of a gas distribution device according to a first embodiment of the present invention; FIG. 4 is a structural view of a gas distribution device including a gas tight plate according to a first embodiment of the present invention; A gas distribution device structure diagram including a gas diffusion groove in a plurality of gas distribution plates according to the first embodiment of the present invention; and FIG. 6 is a multi-piece assembly gas distribution device structure according to the second embodiment of the present creation. Figure 7 is a structural view of a gas distribution device according to a third embodiment of the present invention.

The gas distribution device provided by the present application is applied in a metal organic chemical vapor deposition (MOCVD) reactor 100 as shown in FIG. 1, and the reactor 100 includes a substrate base 104 placed on a rotatable shaft 24. A heating device 103 is mounted under the substrate base 104 to heat the substrate base 104 and the substrate 105 placed on the substrate base to achieve a suitable reaction temperature (e.g., > 1000 ° C). A gas distribution device 101 is installed at the top of the reactor. The gas distribution device 101 is connected to the first gas source 41 via a conduit 43, to the second gas source 42 via a conduit 44, and to the cooling source 50 via a conduit 5. The first gas source 41 and the second gas source 42 may be respectively selected from a gallium-containing metal organic gas such as trimethylgallium (TMG) and a nitrogen-containing gas such as ammonia (NH ₃ ). In the present creation, the gallium-containing gas may be other gases such as GaCl ₃ or the like. The above two reaction gases may also optionally include a carrier gas such as N ₂ or H ₂ to control the flow rate of the reaction gas and the reaction effect.

The gas distribution device provided by the present invention realizes that two kinds of reaction gases are transported along the mutually isolated path inside the gas distributing device and uniformly mixed after respectively escaping the lower surface of the gas distributing device, and then supplying air to the surface of the substrate, so The channels of the two different reactive gases in the gas distribution device are alternately spaced.

The gas distribution device provided by the present invention includes a temperature control plate and a gas distribution plate which are connected to each other, wherein the gas distribution plate and the temperature control plate are fixedly connected by a detachable fixing device; the gas distribution plate includes each other a plurality of isolated first gas distribution channels and a plurality of second gas distribution channels, wherein the plurality of first gas distribution channels are in communication with the first reactive gas source, the plurality of second gas distribution channels and the second reaction gas The plurality of first and second gas distribution channels form a plurality of gas ejection ports on a lower surface of the gas distribution plate; the temperature control plates are respectively provided with a plurality of channels and a plurality of channels on the lower surface of the gas distribution plate The gas ejection ports are correspondingly and in communication; the temperature control plate is further provided with a cooling chamber connected to the cooling source.

The gas distribution plate may be a plate body in which various channels required are provided, or a plurality of plate bodies may be combined. As exemplified below, as shown in FIG. 2, the gas distribution device 101 includes at least three gas distribution plates which are sequentially stacked, connected to each other, a temperature control plate 30, a first gas distribution plate 20, and a second gas distribution plate 10. The temperature control plate 30, the first gas distribution plate 20, and the second gas distribution plate 10 are fixedly connected by a detachable fixing device 4.

The temperature control plate 30, the first gas distribution plate 20 and the second gas distribution plate 10 are respectively provided with a plurality of channels (such as 11, 21, 31, 22, 32), and the temperature control plate 30, After a gas distribution plate 20 and a second gas distribution plate 10 are connected to each other, the plurality of channels (eg, 11, 21, 31, 22, 32) communicate with each other and constitute a plurality of first gas distribution channels that are isolated from each other (reference drawing) 3, reference numeral 1, detailed later) and a plurality of second gas distribution channels (refer to FIG. 3, reference numeral 2, detailed later), the plurality of first gas distribution channels are connected to the first reaction gas source 41 The plurality of second gas distribution channels are in communication with the second reactive gas source 42.

Wherein, the temperature control plate 30 closest to the substrate reaction zone includes an upper surface 30a and a lower surface 30b, which is adjacent to the reaction zone of the reactor (i.e., the lower surface of the gas distribution device 101 of Fig. 1 and the substrate) The area between the pedestals 104) and the first reactive gas source and The second source of reactive gas escapes from the lower surface and enters the reaction zone where they are mixed and deposited or epitaxially grown on the surface of the substrate. The temperature control plate 30 is further provided with a plurality of cooling chambers or cooling ducts 33 distributed over the entire gas distribution plate plane. A cooling chamber or cooling conduit 33 is connected to the coolant source cooling source 50 shown in Figure 1, wherein the cooling source may be water or a gas. The temperature of the temperature control plate 30 can be controlled by these cooling chambers or cooling pipes to guide away the heat radiated from the reaction zone below, so that the temperature of the temperature control plate 30 can be controlled below a certain temperature (for example, 100 ° C). Keeping it at a lower temperature, so as to prevent large displacement and deformation between the multiple plates (30, 20, 10) due to severe temperature changes and different coefficients of thermal expansion, and also to prevent reaction gases from being Under the influence of high temperature, decomposition occurs on the lower surface of the temperature control plate 30 to form a contaminant adhering to the lower surface. When a plurality of gas distribution plates are relatively displaced and deformed, the gas passages are narrowed or even blocked, which affects the uniformity of the final reaction effect. The temperature control plate 30 further includes a plurality of gas through holes 31, 32, wherein the through holes 31, 32 are evenly distributed and arranged on the temperature control plate 30, and are used for uniformly providing a reaction in the reaction chamber during the reaction. The two precursor gases.

A plurality of passages 31, 32 provided on the temperature control plate 30 extend through the upper surface 30a and the lower surface 30b. Preferably, the plurality of channels 31, 32 are evenly distributed over the temperature control plate 30.

Above the temperature control plate 30 is another gas distribution plate 20 (i.e., the aforementioned first gas distribution plate) having a plurality of gas passage holes 31, 32 and a first gas distribution plate 20 on the temperature control plate 30. The plurality of gas through holes 21, 22 are correspondingly positioned. The first gas distribution plate 20 includes an upper surface 20a and a lower surface 20b, and a plurality of passages 21, 22 on the first gas distribution plate 20 also penetrate the upper surface 20a and the lower surface 20b of the first gas distribution plate 20.

There is also a gas distribution plate 10 (i.e., the aforementioned second gas distribution plate) above the gas distribution plate 20, and the gas distribution plate 10 includes a plurality of/a plurality of through holes 11 corresponding to the positions of the through holes 21 on the gas distribution plate 20. . The second gas distribution plate 10 includes an upper surface 10a and a lower surface 10b, and the plurality of channels 11 on the second gas distribution plate may selectively penetrate or not penetrate The upper surface 10a and the lower surface 10b of the second gas distribution plate are described.

The material of the second gas distribution plate 10, the first gas distribution plate 20, and the temperature control plate 30 may be made of a material such as stainless steel or aluminum that does not react with the reaction gas.

As shown in FIG. 3, it is a structural view of the gas distribution device 101 provided according to an embodiment of the present invention. The temperature control plate 30, the first gas distribution plate 20 and the second gas distribution plate 10 in the gas distribution device 101 are sealingly connected together by a detachable mechanical connection. For example, it can be fixed by bolts 4 through fixing holes 34, 24 and 14 provided on the respective distribution plates, wherein the bolts 4 can also be screws or other mechanical fixing means. After being fixed by the mechanical fixing device, the second gas distribution plate 10, the first gas distribution plate 20, and the temperature control plate 30 form a complete gas distribution device. The gas through holes 11, 21, 31 form a first reaction gas passage 1 that communicates with each other; the gas passage holes 22, 32 form a second reaction gas passage 2 that communicates with each other. Since the gas distribution plates 10 and 20 are located behind the temperature control plate 30, away from the high temperature environment, and the temperature control plate 30 itself has a cooling cavity or a cooling pipe to control the temperature, the second gas distribution plate 10 and the first gas distribution plate 20 are thus provided. And the operating temperature of the temperature control plate 30 is not too high, so that they can be directly fixed by mechanical fixing devices to meet the production requirements, and the gas distribution plates 10 and 20 do not appear to be caused by high temperature during the working process. The problem of deformation such as thermal expansion, in addition, these mechanical fixing means can ensure that the second gas distribution plate 10, the first gas distribution plate 20, and the temperature control plate 30 are distributed from the entire gas after the gas distribution device is used for a period of time. The device 101 is disassembled and replaced or separately cleaned to ensure that the gas distribution device 101 is operating at an optimum state. Compared with the prior art, since the gas distribution plates of the present invention can be disassembled and cleaned before being put into use, no waste is generated, and the cost of the user can be greatly saved.

The temperature control plate 30 may be manufactured by first opening a plurality of grooves for accommodating the coolant flowing through the base of the gas distribution plate, and then making a cover covering the coolant tank, the connection between the groove and the cover plate. It can be welded under heating and pressurization by means of vacuum braze welding or vacuum fuse welding. The cover covers the capacity After the tank of the coolant is passed, the temperature control plate 30 forms a temperature control plate 30 containing the cooling duct 33. The plurality of gas through holes 31, 32 may be perforated after the coolant pipe is made, or may be perforated to form the coolant pipe 33.

The embodiment of another gas distribution device 101a in Figure 4 shows the manner in which the first gas source 41 is from the conduit 43 to the gas passage 1. In Fig. 4, an airtight plate 10" is added to the second gas distribution plate 10, and the airtight plate 10" is also fixed and detachable by a detachable connection. The pipe 43 shown in Fig. 1 first transports the first gas source 41 to the diffusion chamber 60 formed between the airtight plate 10" and the gas distribution plate 10, and then uniformly distributes the gas to a different first through the diffusion chamber 60. In the reaction gas passage 1, the second reaction gas source 42 can be connected to the conduit 44 for supplying the second gas through a groove (described later in detail) excavated between the gas distribution plates 10 and 20.

Another gas distribution device 101b in Fig. 5 shows that the gas distribution plates 10 and 20 are excavated with grooves 120 for interconnecting the plurality of first gas passages 1, and the gas distribution plates 20 and 30 are excavated to make more The second gas passage 2 interconnects the grooves 230, thereby achieving uniform distribution of different reaction gases throughout the gas distribution device 101b.

Another gas distribution device 101c in Fig. 6 shows another embodiment of the present gas distribution device, on which a gas-tight plate 10' including a gas diffusion groove 110' is applied, through a gas diffusion groove The gas of the conduit 43 is distributed to the first gas passage. There is also a gas diffusion channel 120' between the gas distribution plates 10, 20 to distribute the gas to the second gas passage. The airtight plate 10', the second gas distribution plate 10, the first gas distribution plate 20, and the temperature control plate 30 are connected and fixed by a mechanical device such as a bolt 4.

In addition to the gas distribution device composed of the 3-4 layer gas distribution plates shown in Fig. 2-6, the creation can also be designed into a structure composed of more layers of gas distribution plates according to the requirements of the diffusion of the reaction gas, such as 5 or 6 The layers are all applicable to the scope of this creation structure.

The gas distribution plate in the present creation can also be integrated into one component, as shown in Fig. 7, the gas distribution device 101d shows another embodiment of the present gas distribution device. Gas distribution The 101d includes a temperature control plate 30 including a lower surface 30b and an upper surface 30a. The temperature control plate further includes a plurality of fixing holes 34 and a plurality of coolant pipes 33. The gas distribution device 101d further includes a gas distribution plate 1020 including a plurality of first gas distribution channels 1021 and second gas distribution channels 1022. The first gas distribution channel 1021 is in communication with the first gas source 41, and the second gas distribution channel 1022 is in communication with the second gas source 42. The first gas passage and the second gas passage are isolated from each other until the gas of the first and second gas sources is discharged from the lower surface opening of the gas distribution plate 1020 to the lower reaction zone. The gas distribution plate 1020 further includes a fixing hole 1024 through which a bolt is fixed to the gas distribution plate 1020 and the temperature control plate 30 by the fixing hole 34 of the lower temperature control plate. The gas distribution plate may be formed by stacking a plurality of pieces as shown in FIG. 2-6, or may be welded into a single piece by a plurality of gas distribution plates (such as 10, 20). Since the temperature control plate 30 is manufactured and assembled at room temperature, the temperature rises greatly when operating in the reaction chamber. Although the coolant controls the temperature, it is still much higher than the room temperature, and from the bottom of the coolant pipe to The lower surface 30b thermally irradiated by the lower reaction zone also has a certain thickness of material, and there is a large temperature gradient from the lower surface to the inner wall of the coolant pipe. Therefore, if the temperature control panel is not specially designed, since the temperature of the lower surface of the temperature control panel 30 is increased more than the upper surface, the edge region may be curled upward. This causes stresses between the gas distribution plate 1020 and the temperature control plate 30 to push each other, and severely, a serious consequence of the rupture of one of the gas distribution plates. Therefore, the present design is designed such that the temperature control plate has a slightly curled edge at a normal temperature. Preferably, the upper surface of the temperature control plate has an arc shape as shown in the figure to offset occurrence in actual process operation. The upward curling deformation eventually maintains a flat surface on the upper and lower surfaces during high temperature processing and does not squash with other gas distribution plates.

The creation of the plurality of gas distribution plates is fixed by a detachable device such as a bolt, so that after the gas distribution device is operated for a period of time, the plurality of gas distribution plates can be removed, cleaned, and reassembled. Since the gas distribution plate closest to the reaction zone includes a temperature control function, the temperature of the plurality of gas distribution plates on the reaction zone away from the reaction zone is relatively low. Even in the presence of gas crosstalk, it rarely reacts to the reaction zone downstream of the deposit contamination. Therefore, the gas distribution plate structure of the present invention can make the gas distribution device easier to maintain and maintain the long-term deposition effect while ensuring the gas phase reaction deposition quality of the metal organic matter on the substrate in the reaction zone.

The various embodiments of the present creation have been described in detail above. It should be noted that the above embodiments are merely exemplary and are not intended to limit the present invention. Any technical solution that does not deviate from the spirit of this creation should fall within the scope of this creation. In addition, any reference signs in the claims should not be construed as limitations.

The above description is only for the preferred embodiment of the present invention, and those skilled in the art can make other improvements according to the above description, but these changes still belong to the creative spirit of the creation and the patents defined below. In the scope.

1‧‧‧First gas passage

10‧‧‧Second gas distribution plate

101‧‧‧ gas distribution device

11‧‧‧ channel

20‧‧‧First gas distribution plate

2‧‧‧second gas passage

21‧‧‧ channel

22‧‧‧ channel

30‧‧‧temperature control board

31‧‧‧ channel

32‧‧‧ channel

33‧‧‧Cooling pipe

4‧‧‧ bolt

Claims (12)

A gas distribution device for a metal organic chemical vapor deposition reactor, comprising: a temperature control plate and a gas distribution plate connected to each other; in an embodiment of the present invention, the gas distribution plate and the temperature control plate The connection is fixedly connected by a detachable fixing device; the gas distribution plate includes a plurality of first gas distribution channels and a plurality of second gas distribution channels separated from each other, the plurality of first gas distribution channels and the first reaction gas The source phase is in communication, the plurality of second gas distribution channels are in communication with the second reaction gas source, and the plurality of first and second gas distribution channels form a plurality of gas ejection ports on the lower surface of the gas distribution plate; the temperature control plate A plurality of channels are respectively disposed corresponding to and in communication with a plurality of gas ejection port positions on the lower surface of the gas distribution plate; and the temperature control plate is further provided with a cooling cavity connected to the cooling source. The gas distribution device of claim 1, wherein the gas distribution plate comprises a first gas distribution plate and a second gas distribution plate that are stacked, and the second gas distribution plate is located above the first gas distribution plate, the first The gas distribution plate and the second gas distribution plate are fixedly connected by a detachable fixing device. The gas distribution device of claim 1, wherein the temperature control plate comprises an upper surface and a lower surface, the lower surface being adjacent to a reaction zone of the reactor, and the first reactive gas source and the first A source of two reactive gases escapes from the lower surface and enters the reaction zone. The gas distribution device of claim 1, wherein the gas distribution plate includes a gas diffusion space in communication with the plurality of first gas distribution channels or the plurality of second gas distribution channels. The gas distribution device of claim 3, wherein the plurality of channels on the temperature control plate extend through the upper surface and the lower surface. The gas distribution device according to claim 1, further comprising an airtight plate disposed above the gas distribution plate and connected to each other, the airtight plate being provided to communicate with the plurality of first gas distribution channels The gas diffusion space. The gas distribution device according to claim 6, wherein the airtight plate and the gas distribution plate are fixedly connected by a detachable fixing device. The gas distribution device of claim 2 or 7, wherein the detachable fixing device is a bolt or a screw. The gas distribution device according to claim 1, wherein the temperature control plate and the gas distribution plate are fixedly connected by a detachable fixing device, and the peripheral region of the surface of the upper temperature plate is controlled to the lower surface of the gas distribution plate at room temperature. Has a gap. The gas distribution device according to claim 9, wherein a gap exists between a surface of the temperature control plate and a lower surface of the gas distribution plate, and a gap of the peripheral region is smaller than a gap of the central region. The gas distribution device of claim 1, wherein the temperature control plate comprises an upper surface, the upper surface having an arc shape. A metal organic chemical vapor deposition reactor, comprising the gas distribution device according to any one of claims 1 to 11, wherein the gas distribution device is installed in the metal organic chemical vapor deposition reaction In the device.