US20140124656A1

US20140124656A1 - Light sensing method

Info

Publication number: US20140124656A1
Application number: US14/151,593
Authority: US
Inventors: Wei-Ting Lan; Cheng-Chi Yen; Ju-Tien Cheng
Original assignee: Himax Display Inc
Current assignee: Himax Display Inc
Priority date: 2009-04-06
Filing date: 2014-01-09
Publication date: 2014-05-08
Also published as: TWI427276B; CN102128679A; US20100252720A1; CN102128679B; TW201037287A; US8658958B2

Abstract

A light detecting method is provided. The light detecting method includes following steps. A light beam is sensed to generate a photocurrent. A predetermined current is subtracted from the photocurrent. The photocurrent is converted to a voltage.

Description

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the priority benefit of U.S. application Ser. No. 12/688,194, filed on Jan. 15, 2010, now pending, which claims the priority benefit of Taiwan application serial no. 98111360, filed on Apr. 6, 2009. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of specification.

BACKGROUND OF THE INVENTION

1. Field of the Invention
The invention relates to a detecting method, and more particularly to a light detecting method.
2. Description of Related Art
In the current display market, either the cathode ray tube (CRT) or the liquid crystal display (LCD) can not provide a large frame yet due to the limitation of the process. In addition, for the projector, the large frame is projected on the screen through a light source, e.g. a lamp, and a plurality of lenses. Accordingly, the large frame of 100˜200 inches can be easily projected by the projector in the inner space.
However, in the past, a dark inner space is necessary for the projector because the brightness of the light source in the projector is insufficient. With the progress in science and technology, the light emitting diode (LED) is applied to the projector to solve the issue. The LED has the advantages of high brightness, low power consumption, small volume, long lifespan, and so on. Accordingly, when the LED serves as the light source of the projector, the projector can project a clear frame even if in a bright inner space.
In order to stabilize the brightness of the light beam emitted by the LED, a feedback control mechanism is used when the LED serves as the light source. In the feedback control mechanism, the brightness of the LED is detected, and the current flowing through the LED is adjusted. FIG. 1 is a schematic diagram of a conventional light detecting circuit. Referring to FIG. 1, the light detecting circuit 100 is applied to the feedback control mechanism of the projector. The light detecting circuit 100 includes a light sensor 101, a current mirror 103, and a sensing resistor R_SEN. The current mirror 103 is formed by PMOS transistors Q₁and Q₂. When being illuminated by the light beam emitted by the LED, the light sensor 101 generates a corresponding photocurrent according to the illumination of the light beam. The current mirror 103 generates a mirror current I flowing through the resistor R_SENaccording to the photocurrent, so that a voltage drop V_SENacross the resistor R_SENis generated. Because the voltage drop V_SENis proportional to the illumination of the light beam emitted by the LED, the illumination thereof can be obtained by measuring the voltage drop V_SEN.
Accordingly, when the light sensor 101 senses a light beam with the high illumination, the mirror current I generated by the current mirror 103 and the voltage drop V_SENare both large. Hence, according to the equation V_SEN=I×R_SEN, the resistance of the resistor R_SENis small because the maximum of the is the voltage V_DD. FIG. 2A and FIG. 2B are characteristic illumination-voltage curves of the light detecting circuit in FIG. 1. Referring to FIG. 2A, the resistance of the resistor R_Bis smaller than that of the resistor R_A, so that a larger range of the illumination can be detected while the resistor R_Bserves as the resistor R_SEN. However, if the resistance of the resistor Rsen is small, the voltage interval ΔV corresponding to the illumination interval ΔL is also small, as shown in FIG. 2B. Accordingly, the resolution of the voltage drop Vsen is reduced, and the illumination of the light beam emitted by the LED can not be determined exactly.

SUMMARY OF THE INVENTION

An embodiment of the invention provides a light detecting method capable of widening the detecting range and enhancing the accuracy while detecting the high brightness light source.
An embodiment of the invention provides a light detecting method including following steps. First of all, a light beam is sensed to generate a photocurrent. Next, a predetermined current is subtracted from the photocurrent. Finally, the photocurrent is converted to a voltage.
In an embodiment of the invention, the light beam is sensed by a light sensor.
In an embodiment of the invention, the light detecting method further includes a step of determining the amount of the predetermined current and the amount of the photocurrent according to a color enable signal and a register table.
In an embodiment of the invention, the predetermined current is generated by a programmable current source, and the light beam is sensed by a photodiode array.
In an embodiment of the invention, the amount of the predetermined current is set as a threshold current value such that the voltage is converted from the photocurrent when the amount of the photocurrent is greater than the threshold current value.
In view of the above, when the high brightness light beam illuminates the light sensor, the light sensor generates a corresponding photocurrent according to the illumination thereof. By dividing the photocurrent corresponding to the low brightness light beam from the total photocurrent through the current source, the light detecting method can mainly detects the high brightness light beam, so that the detecting accuracy is enhanced. Accordingly, when being applied to detect the high brightness light beam, the light detecting circuit utilizing the light detecting method provided in the present application can provide a sensing voltage in a wide enough range and a large enough sense scale, so that the sensing voltage is easy to be distinguished by the rear stage.
To make the aforementioned and other features and advantages of the invention more comprehensible, several embodiments accompanied with figures are described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

FIG. 1 is a schematic diagram of a conventional light detecting circuit.

FIG. 2A and FIG. 2B are characteristic illumination-voltage curves of the light detecting circuit in FIG. 1.

FIG. 3 is a schematic diagram of a light detecting circuit according to an embodiment of the invention.

FIG. 4 is a characteristic illumination-voltage curve of the light detecting circuit in FIG. 3.

FIG. 5 is a schematic diagram of a light detecting circuit according to another embodiment of the invention.

FIG. 6 is a schematic diagram of a light detecting circuit according to an embodiment of the invention.

FIG. 7 is a schematic diagram of a light detecting circuit according to an embodiment of the invention.

FIG. 8 is a schematic diagram of a light detecting circuit according to an embodiment of the invention.

FIG. 9 is a circuit diagram of the light detecting circuit in FIG. 8, in which the light sensor 801 is shown as an equipment circuit of the photodiode.

FIG. 10 illustrates characteristic I-V curves of the light detecting circuit in FIG. 9.

FIG. 11 is a schematic diagram of a light detecting circuit according to another embodiment of the invention.

FIG. 12 is a block diagram of an LCOS color sequential display system according to an embodiment of the invention.

FIG. 13 is a flowchart illustrating a light detecting method according to an embodiment of the invention.

DESCRIPTION OF EMBODIMENTS

FIG. 3 is a schematic diagram of a light detecting circuit according to an embodiment of the invention. Referring to FIG. 3, the light detecting circuit 400 includes a light sensor 401, a first current mirror 403, a first resistor R₁, and a current source 405. In the present embodiment, the light sensor 401 is a photodiode, but the invention is not limited thereto. The first end of the light sensor 401, e.g. the positive end, is coupled to the master current end of the first current mirror 403. The second end of the light sensor 401, e.g. the negative end, is coupled to a first voltage. In this case, the voltage V_SSis used to serve as the first voltage. The first end of the first resistor R₁is coupled to the slave current end of the first current mirror 403, and the second end of the first resistor R₁is coupled to the voltage V_SS. The current source 405 is coupled to the first end of the first resistor R₁.
The first current mirror 403 includes a first transistor T₁and a second transistor T₂. In the present embodiment, the transistors T₁and T₂may be p-channel metal-oxide-semiconductor transistors (PMOS transistors). Herein, the first end of the transistor T₁is coupled to a second voltage, i.e. the voltage V_DD, and the control end of the transistor T₁, e.g. the gate, is coupled to the control end and the second end of the transistor T₂, e.g. the gate and the drain. Moreover, the second end of the transistor T₁, e.g. the drain, serves as the slave current end of the current mirror 403 to be coupled to the first end of the first resistor R₁. The first end of the transistor T₂is coupled to the voltage V_DD, and the drain of the transistor T₂serves as the master current end of the first current mirror 403 to be coupled to the positive end of the light sensor 401.
In present embodiment of the invention, the current source 405 includes a second resistor R₂, a second current mirror 407, and a third current mirror 409. The current mirror 407 includes a third transistor T₃and a fourth transistor T₄. In the present embodiment, the transistors T₃and T₄may be PMOS transistors. Herein, the first end of the transistor T₃, e.g. the source, is coupled to the voltage V_DD, and the control end of the transistor T₃, e.g. the gate, is coupled to the second end of the transistor T₃, e.g. the drain. The control end of the transistor T₄, e.g. the gate, is coupled to the gate of the transistor T₃, and the first end of the transistor T₄, e.g. the source, is coupled to the voltage V_DD. The drain of the transistor T₃is the master current end of the current mirror 407, and the second end of the transistor T₄, e.g. the drain, is the slave current end of the current mirror 407. The first end of the resistor R₂is coupled to the drain of the transistor T₃, and the second end of the resistor R₂is coupled to is coupled to the voltage V_SS.
The current mirror 409 includes a fifth transistor T₅and a sixth transistor T₆. In the present embodiment, the transistors T₅and T₆may be NMOS transistors. Herein, the second end of the transistor T₅, e.g. the source, is coupled to the voltage V_SS, and the control end of the transistor T₅, e.g. the gate, is coupled to the first end of the transistor T₅, e.g. the drain. The control end of the transistor T₆, e.g. the gate, is coupled to the gate of the transistor T₅, and the first end of the transistor T₆, e.g. the drain, is coupled to the first end of the resistor R₁. Furthermore, the second end of the transistor T₆, e.g. the source, is coupled to the voltage V_SS. The drain of the transistor T₅is the master current end of the current mirror 409, and the drain of the transistor T₆is the slave current end of the current mirror 409.
The resistor R₂is used to limit the amount of the current I₃. The current mirror 407 generates the mirror current I₄according to the current I₃, and the current mirror 409 generates the mirror current I₂according to the current I₄. That is, the resistor R₂can determines the amount of the current I₂. Accordingly, while being illuminated by the light beam, the light sensor 401 generates the photocurrent, so that the current mirror 403 correspondingly generates the mirror current I. The minor current I is divided into the current I₁and I₂. The current I₁flows through the resistor R₁, and the current I₂flows through the current source 405. In the present embodiment, while the light sensor 401 is illuminated by the low brightness light beam, the amount of the current I is smaller than the amount of the current I₂. That is, the current I is fully sank by the current source 405, so that the amount of the current I₁flowing through the resistor R₁is zero. Accordingly, the current I₂can be set as the threshold current while the light sensor 401 is illuminated by the low brightness light beam.
In the present, while the light sensor 401 is illuminated by the high brightness light beam, the amount of the current I is larger than the amount of the current I₂. As a result, the part of the current I is sank by the current source 405, and the rest of the current I, i.e. the current I₁equal to I−I₂, flows through the resistor R₁. Meanwhile, a voltage drop across the resistor R₁, i.e. the sensing voltage V_senin FIG. 3, is generated by the current I₁flowing through the resistor R₁. FIG. 4 is a characteristic illumination-voltage curve of the light detecting circuit in FIG. 3. As shown in FIG. 4, the voltage interval ΔV′ corresponding to the illumination interval ΔL varies between the voltages 0 and V_DD. In other word, in the present embodiment, the light detecting circuit 400 can provide an exact accuracy and a high resolution for light detecting while being illuminated by the high brightness light beam. The brightness of the light emitting diode (LED) can be obtained by measuring the sensing voltage V_sen, so that the sensing voltage V_senmay be fed back to the control circuit (not shown) to control the illumination of the light source (not shown).
FIG. 5 is a schematic diagram of a light detecting circuit according to another embodiment of the invention. Referring to FIG. 3 and FIG. 5, the light detecting circuit 500 is similar to the light detecting circuit 400, and the difference between the light detecting circuits 400 and 500 will be described as follows. Referring to FIG. 5, the current source 405 includes a seventh transistor T₇and a bias voltage generating circuit 411. In the present embodiment, the transistor T₇may be an NMOS transistor. Herein, the first end of the transistor T₇, e.g. the drain, is coupled to the first end of the resistor R₁, and the second end of the transistor T₇, e.g. the source, is coupled to the voltage V_SS. Moreover, the bias voltage generating circuit 411 may be a band gap voltage circuit. It should be known to those ordinary skilled in the art that the band gap voltage circuit is a voltage circuit with an adjustable temperature coefficient, which can steady output a band gap voltage without being affected due to the change of the temperature. In the present embodiment, the bias voltage generating circuit 411 is coupled to the gate of the transistor T₇to output the bias voltage V_B1. The bias voltage V_B1is used to drive the transistor T₇to generate/sink the current I₂.
FIG. 6 is a schematic diagram of a light detecting circuit according to another embodiment of the invention. Referring to FIG. 6, the light detecting circuit 600 includes a first resistor R₃, an operational amplifier 603, a light sensor 601, and a current source 605. In the present embodiment, the light sensor 601 is a photodiode, but the invention is not limited thereto. The output end of the operational amplifier 603 is coupled to the second end of the resistor R₃, and outputs the sensing voltage V_sento the control circuit (not shown) to control the illumination of the light source (not shown). The first input end of the operational amplifier 603 may be a non-inverting end, denoted as “+”, coupled to the voltage V_SS. The first input end of the operational amplifier 603 may be an inverting end, denoted as “−”, coupled to the first end of the resistor R₃. The first end of the light sensor 601, e.g. the positive end, is coupled to the first end of the resistor R₃, and the second end of the light sensor 601, e.g. the negative end, is coupled to the voltage V_SS.
The current source 605 includes a second resistor R₄, a first current mirror 607, and a second current mirror 609. The first end of the resistor R₄is coupled to the voltage V_DD. The current mirror 607 includes a first transistor P₁and a second transistor P₂. In the present embodiment, the transistors P₁and P₂may be NMOS transistors. Herein, the first end of the transistor P₁, e.g. the drain, is coupled to the second end of the resistor R₄, and the second end of the transistor P₁, e.g. the source, is coupled to the voltage V_SS. Moreover, the control end of the transistor P₁, e.g. the gate, is coupled to the drain of the transistor P₁. The control end of the transistor P₂, e.g. the gate, is coupled to the gate of the transistor P₁, and the second end of the transistor P₂, e.g. the source, is coupled to the voltage V_SS. The drain of the transistor P₁is the master current end of the current mirror 607, and the first end of the transistor P₂, e.g. the drain, is the slave current end of the current mirror 607.
The current mirror 609 includes a third transistor P₃and a fourth transistor P₄. In the present embodiment, the transistors P₃and P₄may be PMOS transistors. Herein, the first end of the transistor P₃, e.g. the source, is coupled to the voltage V_DD, and the control end of the transistor P₃, e.g. the gate, is coupled to the drain of the transistor P₃. Moreover, the second end of the transistor P₃, e.g. the drain, is coupled to the drain of the transistor P₂. The first end of the transistor P₄, e.g. the source, is coupled to the voltage V_DD, and the control end of the transistor P₄, e.g. the gate, is coupled to the gate of the transistor P₃. Moreover, the second end of the transistor P₄, e.g. the drain, is coupled to the positive end of the light sensor 601. The drain of the transistor P₃is the master current end of the current mirror 609, and the drain of the transistor P₄is the slave current end of the current mirror 609.
As shown in FIG. 6, the resistor R4 is used to limit the amount of the current I₇. The current mirror 607 generates the mirror current I₈according to the current I₇, and the current mirror 409 generates the mirror current I₆according to the current I₈. In the present embodiment, the light detecting circuit 600 is a circuit with an inverting close-loop amplifier, but the invention is not limited thereto. Referring to FIG. 3 and FIG. 6, the operation of the light detecting circuit 600 is similar to that of the light detecting circuit 400. Referring to FIG. 6, while the light sensor 601 is illuminated by the high brightness light beam, the amount of the current I is larger than the amount of the current I₆. The part of the current I is provided by the current source 605, and the rest of the current I is provided by the current I₅. Meanwhile, a voltage drop across the resistor R₃is generated by the current I₅flowing through the resistor R₃, thereby generating a sensing voltage V_senat the output end of the operational amplifier 603. As known from the characteristic illumination-voltage curve illustrated in FIG. 4, the illumination of the light source can be obtained from the corresponding sensing voltage V_sen.
FIG. 7 is a schematic diagram of a light detecting circuit according to another embodiment of the invention. Referring to FIG. 6 and FIG. 7, the light detecting circuit 700 is similar to the light detecting circuit 600, and the difference between the light detecting circuits 600 and 700 will be described as follows. Referring to FIG. 7, the current source 605 includes a fifth transistor P₅and a bias voltage generating circuit 611. In the present embodiment, the transistor P₅may be a PMOS transistor. Herein, the first end of the transistor P₅, e.g. the source, is coupled to the voltage V_DD, and the second end of the transistor P₅, e.g. the drain, is coupled to the positive end of the light sensor 601. Moreover, the bias voltage generating circuit 611 may be a band gap voltage. The bias voltage generating circuit 611 is coupled to the control end of the transistor P₅, e.g. the gate, and configured to output the bias voltage V_B2, i.e. the band gap voltage to drive the transistor P₅to steady generate the current I₆.
FIG. 8 is a schematic diagram of a light detecting circuit according to another embodiment of the invention. Referring to FIG. 8, the light detecting circuit 800 includes a light sensor 801, an operational amplifier 803, a current source 805, and a feedback impedance unit 807. In the present embodiment, the feedback impedance unit 807 includes a feedback resistor R and a feedback capacitor C. Herein, the feedback resistor R determines the loop gain of the operational amplifier 803 converting the photocurrent I_phto the sensing voltage V_SEN, and the feedback capacitor C is used to prevent the circuit system from being unstable and avoid the issue related to the circuit oscillation.
The output end of the operational amplifier 803 is coupled to the second end B of the feedback impedance unit 807, and outputs the sensing voltage V_SENto the rear stage, e.g. an A/D converter (not shown). The first input end of the operational amplifier 803 may be a non-inverting end, denoted as “+”, coupled to the ground GND. The second input end of the operational amplifier 803 may be an inverting end, denoted as “−”, coupled to the first end A of the feedback impedance unit 807.
In the present embodiment, the N+/P-Well photodiode is exemplary for the light sensor 801. The first end of the light sensor 801, e.g. the cathode end, is coupled to the first end A of the feedback impedance unit 807, and the second end thereof, e.g. the anode end, is coupled to the ground GND. Moreover, there is no direct voltage drop between the two ends of the photodiode, and thus, the dark current is not generated, so that the light detecting circuit 800 has the higher signal-to-noise ratio and the better sensitivity.
It should be noted that, the light detecting circuit 800 of the present embodiment includes the current source 805 which is coupled to the cathode end of the photodiode, and the threshold current is set through the current source 805. It will be described in detail later. In other embodiments, the light sensor 801 may be a P+/N-Well photodiode, and the current source 805 is coupled to the anode end of the photodiode. Furthermore, in the present embodiment, the light detecting circuit 800 is a circuit with an inverting close-loop amplifier, but the invention is not limited thereto.
FIG. 9 is a circuit diagram of the light detecting circuit in FIG. 8, in which the light sensor 801 is shown as an equipment circuit of the photodiode. Herein, the equipment circuit of the photodiode includes a photocurrent I_ph, an equipment capacitor C_j, and an equipment resistor R_sh. Referring to FIG. 9, in the present embodiment, the current source 805 provides a bias current I_biasto set the threshold current. When the brightness of the light beam reaches to a specific value, the light sensor 801 can generate a photocurrent I_phlarger than the threshold current. In such a case, the photocurrent I_phcan be converted to the sensing voltage V_SEN. On the contrary, if the photocurrent I_phgenerated by the light sensor 801 is smaller than the threshold current, the function of converting the photocurrent I_phto the sensing voltage V_SENis cut off to filter out the photocurrent corresponding to the low brightness light beam. That is, the light sensor generates a corresponding photocurrent according to the illumination while being illuminated by the high brightness light beam. By dividing the photocurrent corresponding to the low brightness light beam from the total photocurrent through the current source, the light detecting circuit can mainly detects the high brightness light beam, so that the detecting accuracy can be enhanced.
Specifically, FIG. 10 illustrates characteristic I-V curves of the light detecting circuit in FIG. 9. Referring to FIG. 9 and FIG. 10, in the present embodiment, the N+/P-Well photodiode is exemplary for the light sensor 801, and the threshold current is set as the bias current I_bias. When the photodiode is illuminated by the light beam, if the photocurrent I_phgenerated by the photodiode is smaller than the bias current I_bias, a forward current I_Fflowing through the feedback resistor R is generated. At this time, the sensing voltage V_SENdoes not change with the photocurrent I_ph. On the contrary, if the photocurrent I_phgenerated by the photodiode is larger than the bias current I_bias, a reverse current I_Rflowing through the feedback resistor R is generated. At this time, the sensing voltage V_SENchange with the photocurrent I_phin the linear manner.
As a result, the voltage interval ΔV is increased to the voltage interval ΔV′, so that the sensing voltage V_SENchanges between the voltages 0 and V_DD, and the slope ΔV/ΔI_phof the I-V curve in the photovoltaic mode is changed to the slope ΔV′/ΔI_phof the I-V curve while the bias current source is enabled. Accordingly, the light detecting circuit of the embodiment can widen the detecting range and enhance the accuracy while detecting the high brightness light source. That is, the light sensor generates a corresponding photocurrent according to the illumination while being illuminated by the high brightness light beam. By dividing the photocurrent corresponding to the low brightness light beam from the total photocurrent through the current source, the light detecting circuit can mainly detects the high brightness light beam, so that the detecting accuracy can be enhanced. Accordingly, when being applied to detect the high brightness light beam, the light detecting circuit can provide a sensing voltage in a wide enough range and a large enough sense scale, so that the sensing voltage is easy to be distinguished by the rear stage.
It should be noted that, in the present embodiment, the bias current I_biasprovided by the current source 805 can be set as zero, so that the light detecting circuit operates in the photovoltaic mode.
FIG. 11 is a schematic diagram of a light detecting circuit according to another embodiment of the invention. FIG. 12 is a block diagram of an LCOS color sequential display system according to an embodiment of the invention. Herein, the light detecting circuit 1100 of FIG. 11 serves as a color sensor of the LCOS color sequential display system 1200. Referring to FIG. 11 and FIG. 12, the light detecting circuit 1100 is similar to the light detecting circuit 800, and the difference between the light detecting circuits 1100 and 800 will be described as follows.
In the present embodiment, the current source 1105 is a programmable current source. The programmable current source 1105 is coupled to the inverting end of the operational amplifier and provides a programmable current as the bias current, so that the threshold current can be freely set. The light sensor 1101 is a photodiode array unit including a switch unit 1101S and a photodiode array 1101D. The photodiode array 1101D is used to sense the light beams with different colors and generate a plurality of photocurrents I₀-I₄. The switch unit 1101S control the summation of the photocurrents I₀-I₄through the switches d₀-d₄which are coupled to the corresponding photodiode strings in series.
As known from FIG. 12, the LCOS color sequential display system 1200 includes an LCOS color sequential panel 1202, a register table 1204, a selection unit 1206, and the light detecting circuit 1100. Herein, the light detecting circuit 1100 serves as a color sensor of the LCOS color sequential display system 1200. The operation of the LCOS color sequential display system is well known to those skilled in the art, and it will not be described herein.
When the light detecting circuit 1100 serves as the color sensor of the LCOS color sequential display system 1200, the threshold current can be set corresponding to the different color beams, and the photodiode strings can be turned on or off in the light detecting circuit 1100. Accordingly, it is unnecessary to design a plurality of corresponding color sensing circuits for the different color beams, so that the cost of the circuit can be reduced. Also, in this case, when being applied to detect the high brightness light beam, the light detecting circuit can provide a sensing voltage in a wide enough range and a large enough sense scale, so that the sensing voltage is easy to be distinguished by the rear stage.
Specifically, the sensitivity of the photodiodes for different color beams is different, and it is usually the red beam, the blue beam, and the green beam in turns. That is, when the photodiodes are illuminated by different color beams with the same brightness, the size of the photocurrents generated by different color beams, from large to small, are the red beam, the blue beam, and the green beam. Accordingly, when the light detecting circuit 1100 serves as the color sensor of the LCOS color sequential display system 1200, it is required to set the threshold currents corresponding to the different color beams, and turned on or off the corresponding photodiode strings.
For example, when the light detecting circuit 1100 senses the red beam, the programmable current source 1105 provides a bias current I_bias(R)as the threshold current for the red beam. At this time, if the photocurrent I_ph(R)generated by the photodiodes for sensing the red beam is larger than the threshold current I_bias(R), the sensing voltage V_SEN(R)change with the photocurrent I_ph(R)in the linear manner. Next, when the light detecting circuit 1100 senses the green beam, the programmable current source 1105 provides a bias current I_bias(G)as the threshold current for the green beam. At this time, if the photocurrent I_ph(R)generated by the photodiodes for sensing the green beam is larger than the threshold current I_bias(G), the sensing voltage V_SEN(G)change with the photocurrent I_ph(G)in the linear manner.
In the present embodiment, in order to provide the sensing voltages in a wide enough range and a large enough sense scale for all of the different color beams, it is required to set the threshold currents I_bias(G)and I_bias(R)to be approximate or to be equal while the light detecting circuit 1100 operates. However, the sensitivity of the photodiodes for the red beam is greater than that of the photodiodes for the green beam. Accordingly, by adjusting the switch unit 1101S in the photodiode array unit 1101, all of the generated photocurrents can larger than the corresponding threshold currents while the light detecting circuit 1100 detects different color beams.
For example, in order to make the photocurrent I_ph(G)be larger than the threshold currents I_bias(G), when the light detecting circuit 1100 detects the green color beam, the switches d₀-d₄can be switched, so that the amount of the photodiodes turned on for the green beam in the photodiode array 1101D is more than the amount of the photodiodes turned on for the red beam when the light detecting circuit 1100 detects the red color beam.
Similarly, in order to make the photocurrent I_ph(B)be larger than the threshold currents I_bias(B), when the light detecting circuit 1100 detects the blue beam, the switches d₀-d₄can be switched, so that the amount of the photodiodes turned on for the blue beam in the photodiode array 1101D is more than the amount of the photodiodes turned on for the red beam when the light detecting circuit 1100 detects the red beam, but less than the amount of the photodiodes turned on for the green beam when the light detecting circuit 1100 detects the green beam. Accordingly, when being applied to detect the high brightness light beams with different colors, the light detecting circuit can provide the sensing voltages in a wide enough range and a large enough sense scale, so that the sensing voltages are easy to be distinguished by the rear stage.
In the present embodiment, the programmable current source 1105 receives a current selection signal b[4:0] from a selection unit 1206 to determine the amount of the programmable current I_bias, i.e. the threshold current. The switch unit 1101S receives a switch selection signal D[4:0] from the selection unit 1206 to determine the amount of the photodiodes to be turned on when the light detecting circuit 1100 detects different color beams, thereby controlling the total amount of the photocurrents.
Moreover, the register table 1204 stores parameters of driving the programmable current source 1105 and the switch unit 1101 corresponding to different color beams, such as the threshold currents corresponding to different color beams, and the amount of the photodiodes to be turned on when the light detecting circuit 1100 detects different color beams. When receiving the color enable signal provided by the LCOS color sequential panel 1202, the selection unit 1206 respectively outputs the current selection signal b[4:0] and the switch selection signal D[4:0] to the programmable current source 1105 and the switch unit 1101S. Accordingly, when serving as the color sensor of the LCOS color sequential display system 1200, the light detecting circuit 1100 can set the threshold currents corresponding to the different color beams and turn on or off the corresponding photodiode strings according to the color enable signal and the register table.
In the present embodiment, the light detecting circuit 1100 serving as the color sensor for the red, the green, the blue beams is exemplary, and it does not limit the invention. In other embodiments, the light detecting circuit 1100 may serves as the color sensor for the white, the red, the green, the blue beams.
It should be noted that, in the present embodiment, the light detecting circuit 1100 further includes a small direct-current (DC) bias voltage source V_photocoupled to the non-inverting end of the operational amplifier 1103. Accordingly, when the photodiode is the N+/P-Well diode, by the voltage source V_photo, it is can be avoided that the switches can not be turned off because the negative voltage or other unexpected voltages occur in the negative end of the photodiode.
According to the disclosure of the above embodiments, a light detecting method is provided as follows. FIG. 13 is a flowchart illustrating the light detecting method according to an embodiment of the invention. Referring to FIG. 13, in the present embodiment, the light detecting method includes following steps. First of all, a light beam is sensed to generate a photocurrent. In the present embodiment, the light sensor, e.g. a photodiode, is adopted to sense the light beam and correspondingly generates the photocurrent. Next, in step S1302, a predetermined current is subtracted from the photocurrent to obtain a subtracted photocurrent. Those ordinary skilled in the art can determine the predetermined current in any method. For example, the photocurrent is divided by using a current source to execute the step of subtracting the predetermined current from the photocurrent. In step S1303, the subtracted photocurrent is converted to a sensed voltage V_sen. According to the amount of the sensed voltage V_sen, the illumination of the sensing light beam is obtained.
Obviously, in another embodiment, the amount of the predetermined current and the amount of the photocurrent may be determined according to a color enable signal and a register table in the light detecting method. In the above-described embodiment, the predetermined current, for example, is generated by a programmable current source, and the light beam, for example, is sensed by a photodiode array.
To sum up, in the embodiments of the invention, the light sensor generates a corresponding photocurrent according to the illumination while being illuminated by the high brightness light beam. By dividing the photocurrent corresponding to the low brightness light beam from the total photocurrent through the current source, the light detecting method can mainly detects the high brightness light beam, so that the detecting accuracy can be enhanced. Accordingly, when being applied to detect the high brightness light beam, the light detecting circuit utilizing the light detecting method provided in the present application can provide an output voltage in a wide enough range and a large enough sense scale, so that the sensing voltage is easy to be distinguished by the rear stage. Moreover, the light detecting circuit can adjust the threshold currents for the photocurrents corresponding to different color beams while being applied to a color sensor. Accordingly, it is unnecessary to design a plurality of corresponding color sensing circuits for the different color beams, so that the cost of the circuit can be reduced.
Although the invention has been described with reference to the above embodiments, it is apparent to one of the ordinary skill in the art that modifications to the described embodiments may be made without departing from the spirit of the invention. Accordingly, the scope of the invention will be defined by the attached claims not by the above detailed descriptions.

Claims

What is claimed is:

1. A light detecting method, comprising:

sensing a light beam to generate a photocurrent;

subtracting a predetermined current from the photocurrent; and

converting the photocurrent to a voltage.

2. The light detecting method as claimed in claim 1, wherein the light beam is sensed by a light sensor.

3. The light detecting method as claimed in claim 2, further comprising a step of determining the amount of the predetermined current and the amount of the photocurrent according to a color enable signal and a register table.

4. The light detecting method as claimed in claim 3, wherein the predetermined current is generated by a programmable current source, and the light beam is sensed by a photodiode array.

5. The light detecting method as claimed in claim 2, wherein the amount of the predetermined current is set as a threshold current value such that the voltage is converted from the photocurrent when the amount of the photocurrent is greater than the threshold current value.