US6173001B1 - Output couplers for lasers - Google Patents
Output couplers for lasers Download PDFInfo
- Publication number
- US6173001B1 US6173001B1 US09/025,324 US2532498A US6173001B1 US 6173001 B1 US6173001 B1 US 6173001B1 US 2532498 A US2532498 A US 2532498A US 6173001 B1 US6173001 B1 US 6173001B1
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- Prior art keywords
- output coupler
- dielectric bodies
- bulk
- gap
- faces
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3525—Optical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0606—Crystal lasers or glass lasers with polygonal cross-section, e.g. slab, prism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0612—Non-homogeneous structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
- H01S3/08063—Graded reflectivity, e.g. variable reflectivity mirror
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
Definitions
- This invention relates to the fields of lasers and optics.
- a frequent problem in the performance of solid state lasers is optical damage to the dielectric coatings forming the output coupler.
- Such multilayer dielectric-film coatings are generally the weakest element in a laser system, and typically fail at intensities below 10 GW/cm 2 or fluences below 5 J/cm 2 .
- the optical intensity at the output coupler is often larger than at other surfaces, making the output coupler a common source of problems.
- a bulk etalon as described above, is used in a solid-state laser, at least one end—the output end—of the solid-state gain medium must be treated to eliminate reflections at the solid-to-air interface. This could be done by depositing a dielectric antireflection coating on the gain medium, or by cutting the gain medium at Brewster's angle. The use of such a dielectric coating can result in a lower threshold for optical damage. Cutting the gain medium at Brewster's angle complicates the fabrication of the device and can lead to poorer performance.
- an output coupler is formed of two bodies of bulk material separated by a fluid-filled gap between the highly parallel faces of the bodies.
- the bodies are formed of a high-damage-threshold material such as rutile (TiO 2 ) and the spacing between the bodies is an odd multiple of one-quarter wavelength apart to achieve maximum reflectivity.
- FIG. 1 is a schematic of a first embodiment of the invention showing a partially reflecting output coupler formed by two transparent bulk dielectric materials ( ⁇ B , Brewster's angle; n 1 , refractive index of medium 16 ; n 2 , refractive index of medium 14 ).
- FIG. 1A is a sectional view of one embodiment of spacer 18 along lines I—I.
- FIG. 2 is a schematic of an alternate embodiment of the invention showing a partially reflecting output coupler comprising a compound etalon formed by a fluid-filled gap between two transparent bulk dielectric materials and a bulk dielectric etalon formed by the second dielectric material (n 1 , refractive index of medium 16 ; n 2 , refractive index of medium 14 ).
- FIG. 2A is a sectional view along lines II—II of FIG. 2 .
- FIG. 2B is a schematic as in FIG. 2 in which a compound etalon 10 ′ is formed.
- FIG. 3 is a schematic of a further embodiment illustrating a stand-alone partially reflecting output coupler formed by a fluid-filled gap between two transparent bulk dielectric materials ( ⁇ B , Brewer's angle; n 1 , refractive index of medium 16 ; n 2 , refractive index of medium 14 ).
- FIG. 4 is a schematic of another embodiment illustrating a stand-alone partially reflecting output coupler comprising a compound etalon formed by a fluid-filled gap between two transparent bulk dielectric materials and a bulk dielectric etalon formed by the second dielectric material ( ⁇ B , Brewster's angle; n 1 , refractive index of medium 116 ; n 2 , refractive index of medium 114 ).
- FIG. 5 is a schematic of yet another embodiment showing a stand-alone partially reflecting output coupler comprising a compound etalon formed by a fluid-filled gap between two bulk dielectric etalons (n 1 , refractive index of medium 116 ; n 2 , refractive index of medium 114 ).
- FIG. 6 is a schematic of a first laser embodiment of the invention showing a passively Q-switched laser with an air-gap etalon of the type shown in FIG. 1 as an output coupler.
- FIG. 7 is a schematic of a second laser embodiment of the invention showing a passively Q-switched laser with a compound etalon of the type shown in FIG. 2 as an output coupler.
- FIG. 8 is a graph showing the output-coupler reflectivities that can be achieved with output couplers of the types shown in FIGS. 1 and 2, with no dielectric coatings, with YAG as medium 16 (corresponding to n 1 in FIGS. 1 and 2) as a function of the refractive index of medium 14 .
- FIG. 9 is a graph showing the reflectivities that can be achieved with stand-alone output couplers of the types shown in FIGS. 3, 4 and 5 , with no dielectric coatings, with a single medium, as a function of the medium's refractive index.
- FIGS. 1 and 2 First and second embodiments of the invention are shown in FIGS. 1 and 2, respectively, wherein the output face 16 A of a gain medium 16 is used as one side of an air-gap (or inert gas-filled) etalon 10 formed by the highly parallel faces 16 A and 14 A on the gain medium 16 and a second dielectric material 14 .
- the opposite side of the second dielectric material 14 can be provided with antireflection coating 20 as shown in FIG. 2 or cut at Brewster 's angle ⁇ B , to form the output facet 14 B as in FIG. 1 . Since this facet 14 B is external to the laser cavity, the dielectric coating 20 will see a lower intensity than if it were inside the cavity (on the gain medium), and a Brewster's angle cut becomes less critical.
- the maximum reflectivity is achieved when the length of the air-gap etalon is an odd multiple of one-quarter of the oscillating wavelength.
- n 1 is the refractive index of the first dielectric material (the gain medium) and n 2 is the refractive index of the second dielectric material.
- the spacer 18 for forming the gap 12 may be formed of any suitable material, such as quartz, sapphire or gold.
- the fluid in the gap 12 may comprise air or an inert gas, such as argon.
- An additional benefit of the air-gap etalon, compared to the bulk dielectric etalon, is that the air-gap etalon can be made extremely thin. Thinner etalons have a larger free spectral range than thicker etalons.
- the spectral profile of the output coupler can be extremely flat over the bandwidth of interest.
- Thin air gaps can be accurately fabricated by depositing the spacer 18 on one of the materials before bonding the two materials together.
- a shallow pocket to form an air gap 12 ′ can be accurately etched into one of the materials before they are joined along lines II—II of the embodiment of FIG. 2 .
- the opposite side of the second dielectric material 14 is polished to be parallel to the air-gap faces 16 A and 14 A, forming a compound etalon 10 ′.
- Such compound etalons will have bandwidths similar to the simple bulk etalons described in the background, except that the reflectivities can be much higher.
- a stand-alone output coupler 100 which can be used to efficiently couple input power 110 from an optical cavity or device to output power 120 .
- the input power 110 is coupled to an optical bulk medium 116 forming one side of the partial reflector or output coupler 100 .
- the input face 116 B is cut at a Brewster's angle ⁇ B .
- the output face 116 A is formed substantially planar and spaced parallel to a similarly planar face 114 A on bulk medium 114 by spacer 118 .
- the space 112 may be filled with air or an inert gas, and the gap is preferably an odd multiple of one-quarter the optical wavelength.
- FIG. 4 is identical to FIG. 3, except that the output face 114 B of body 114 has an optional dielectric coating 122 as in FIG. 2 rather than being formed at a Brewster's angle.
- FIG. 5 is identical to the embodiment of FIG. 4 except that both bodies 116 and 114 are formed without Brewster's angles ⁇ B on the respective input and output faces, and instead may use optional dielectric coatings 122 .
- compound etalons can be formed by eliminating the dielectric coatings 122 in FIGS. 4 and 5.
- a typical passively Q-switched laser is comprised of a body of material 212 such as Nd 3+ :YAG forming a gain medium which is coupled, normally by bonding, to a saturable absorber crystal 214 , for example Cr 4+ :YAG. Both media are polished flat on opposing faces and mounted in parallel normal to the optic axis.
- the active media may be capped with transparent media 210 and 220 , for example undoped YAG, to help control thermal problems.
- Elements 212 and 214 and optional elements 210 and 220 form a laser cavity 200 bounded at the pump side facet 216 A by an input coupler 216 in the form of a dielectric coating which is highly reflective at the laser-cavity oscillating frequency and highly transmissive of the pump light 215 from a pump source (not shown).
- the output face 200 A of the cavity 200 is bonded to an output coupler 218 of the invention in the form of the body 220 (or 214 if optional element 220 is not used) of polished flat transparent solid dielectric material, such as YAG, which interfaces with a second body 222 of optical material, such as rutile, with a high threshold for optical damage.
- the two opposing faces of the bodies 220 and 222 are separated an odd number of 1 ⁇ 4 wavelengths by spacer 224 , leaving a gap 226 in which air or an inert gas is disposed.
- the opposing faces are preferably flat and parallel to each other and normal to the optical axis of the laser cavity 200 .
- the output face 230 is either formed at the Brewster's angle ⁇ B as in FIG. 6 or as shown in FIG. 7 flat and provided with an optional dielectric coating 240 .
- FIG. 7 is otherwise identical to FIG. 6 .
- the use of a birefringent medium as one of the two dielectric materials can result in a polarizing output coupler.
- the output coupler reflectivities that can be achieved with YAG as the medium 16 in FIGS. 1 and 2B are shown in FIG. 8 as a function of the refractive index of the medium 14 .
- the wavelength of interest is 1.064 ⁇ m.
- FIG. 9 is a plot of reflectivities achievable with stand-alone output couplers of the types shown in FIGS. 3, 4 and 5 with a single medium and no dielectric coatings as a function of the medium's refractive index.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Lasers (AREA)
Abstract
Description
TABLE 1 | ||
Reflectivity |
Material | Index | FIG. 5 | ||||
Rutile ne* | 2.740 | 0.4431 | 0.7456 | 0.5851 | 0.8232 | 0.9315 |
Rutile no* | 2.480 | 0.4057 | 0.6986 | 0.5188 | 0.7690 | 0.8996 |
YAG | 1.818 | 0.2867 | 0.5107 | 0.2867 | 0.5107 | 0.6927 |
Sapphire | 1.750 | 0.2722 | 0.4837 | 0.2578 | 0.4699 | 0.6517 |
Quartz | 1.540 | 0.2243 | 0.3887 | 0.1655 | 0.3250 | 0.4873 |
*Rutile is highly birefringent and has two entries, corresponding to the ordinary (no) and extraordinary (ne) polarization. |
Claims (33)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US09/025,324 US6173001B1 (en) | 1998-02-18 | 1998-02-18 | Output couplers for lasers |
PCT/US1999/003365 WO1999043059A1 (en) | 1998-02-18 | 1999-02-17 | Output couplers for lasers |
US09/649,900 US6351484B1 (en) | 1998-02-18 | 2000-08-28 | Output couplers for lasers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US09/025,324 US6173001B1 (en) | 1998-02-18 | 1998-02-18 | Output couplers for lasers |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/649,900 Division US6351484B1 (en) | 1998-02-18 | 2000-08-28 | Output couplers for lasers |
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US6173001B1 true US6173001B1 (en) | 2001-01-09 |
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US09/025,324 Expired - Fee Related US6173001B1 (en) | 1998-02-18 | 1998-02-18 | Output couplers for lasers |
US09/649,900 Expired - Fee Related US6351484B1 (en) | 1998-02-18 | 2000-08-28 | Output couplers for lasers |
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US09/649,900 Expired - Fee Related US6351484B1 (en) | 1998-02-18 | 2000-08-28 | Output couplers for lasers |
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WO (1) | WO1999043059A1 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351484B1 (en) * | 1998-02-18 | 2002-02-26 | Massachusetts Institute Of Technology | Output couplers for lasers |
US6512630B1 (en) * | 2001-07-13 | 2003-01-28 | The United States Of America As Represented By The Secretary Of The Air Force | Miniature laser/amplifier system |
US20070280305A1 (en) * | 2006-06-05 | 2007-12-06 | Oved Zucker | Q-switched cavity dumped laser array |
US20140086268A1 (en) * | 2012-09-26 | 2014-03-27 | Raytheon Company | Microchip laser with single solid etalon and interfacial coating |
US20170307956A1 (en) * | 2014-09-05 | 2017-10-26 | Oxxius | A resonant-microchip-cavity-based system for generating a laser beam via a nonlinear effect |
CN109921272A (en) * | 2019-03-20 | 2019-06-21 | 中国科学院半导体研究所 | Fully enclosed crystal-bonded laser resonator without air gap |
CN112219140A (en) * | 2018-01-29 | 2021-01-12 | 加里夏普创新有限责任公司 | Hollow Tee Optical Element |
US20210263201A1 (en) * | 2017-06-02 | 2021-08-26 | Lawrence Livermore National Security, Llc | Innovative solutions to improve laser damage thresholds of optical structures |
US11815705B2 (en) | 2017-06-02 | 2023-11-14 | Lawrence Livermore National Security, Llc | Innovative solutions for improving laser damage performance of multi-layer dielectric gratings |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4573644B2 (en) * | 2004-12-22 | 2010-11-04 | 独立行政法人理化学研究所 | Q switch element, laser oscillation element and pulse width variable laser device |
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