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USD1051838S1 - Single-slot tubular cathode - Google Patents

Single-slot tubular cathode Download PDF

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Publication number
USD1051838S1
USD1051838S1 US29/818,782 US202129818782F USD1051838S US D1051838 S1 USD1051838 S1 US D1051838S1 US 202129818782 F US202129818782 F US 202129818782F US D1051838 S USD1051838 S US D1051838S
Authority
US
United States
Prior art keywords
tubular cathode
slot tubular
slot
cathode
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/818,782
Inventor
Bon-Woong Koo
Frank Sinclair
Alexandre Likhanskii
Svetlana Radovanov
Alexander Perel
Graham Wright
Jay T. Scheuer
Daniel Tieger
You Chia Li
Jay Johnson
Tseh-Jen Hsieh
Ronald Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/817,500 external-priority patent/US11127557B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US29/818,782 priority Critical patent/USD1051838S1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JOHNSON, RONALD, WRIGHT, GRAHAM, PEREL, ALEXANDER, HSIEH, TSEH-JEN, LI, YOU CHIA, SINCLAIR, FRANK, JOHNSON, JAY, RADOVANOV, SVETLANA, SCHEUER, JAY T., TIEGER, DANIEL, KOO, BON-WOONG, LIKHANSKII, ALEXANDRE
Application granted granted Critical
Publication of USD1051838S1 publication Critical patent/USD1051838S1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H01J27/024—Extraction optics, e.g. grids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electron Sources, Ion Sources (AREA)

Description

FIG. 1 is a first isometric view of a single-slot tubular cathode showing the new design;
FIG. 2 is a second isometric view thereof;
FIG. 3 is a top view thereof;
FIG. 4 is a bottom view thereof;
FIG. 5 is a first side view thereof;
FIG. 6 is a second side view thereof;
FIG. 7 is a first end view thereof; and,
FIG. 8 is a second end view thereof.
The broken lines illustrate the environmental structure and form no part of the claimed design.

Claims (1)

    CLAIM
  1. The ornamental design for a single-slot tubular cathode substantially as shown and described.
US29/818,782 2020-03-12 2021-12-10 Single-slot tubular cathode Active USD1051838S1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US29/818,782 USD1051838S1 (en) 2020-03-12 2021-12-10 Single-slot tubular cathode

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/817,500 US11127557B1 (en) 2020-03-12 2020-03-12 Ion source with single-slot tubular cathode
US17/407,714 US11631567B2 (en) 2020-03-12 2021-08-20 Ion source with single-slot tubular cathode
US29/818,782 USD1051838S1 (en) 2020-03-12 2021-12-10 Single-slot tubular cathode

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US17/407,714 Continuation US11631567B2 (en) 2020-03-12 2021-08-20 Ion source with single-slot tubular cathode

Publications (1)

Publication Number Publication Date
USD1051838S1 true USD1051838S1 (en) 2024-11-19

Family

ID=78817785

Family Applications (2)

Application Number Title Priority Date Filing Date
US17/407,714 Active 2040-06-29 US11631567B2 (en) 2020-03-12 2021-08-20 Ion source with single-slot tubular cathode
US29/818,782 Active USD1051838S1 (en) 2020-03-12 2021-12-10 Single-slot tubular cathode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US17/407,714 Active 2040-06-29 US11631567B2 (en) 2020-03-12 2021-08-20 Ion source with single-slot tubular cathode

Country Status (1)

Country Link
US (2) US11631567B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240089698A (en) * 2021-10-29 2024-06-20 액셀리스 테크놀러지스, 인크. Shielding gas inlet for ion source

Citations (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358256A (en) * 1965-04-08 1967-12-12 Sansui Electric Co Miniature low frequency transformer
US3682017A (en) * 1970-02-20 1972-08-08 Interelectric Ag Balanced cylindrical coil for an electrical machine
US4774437A (en) 1986-02-28 1988-09-27 Varian Associates, Inc. Inverted re-entrant magnetron ion source
USD338105S (en) * 1990-11-01 1993-08-10 Karch Michael A Nail coil caddy
US5262652A (en) 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
US5763890A (en) 1996-10-30 1998-06-09 Eaton Corporation Cathode mounting for ion source with indirectly heated cathode
US5778737A (en) * 1983-09-29 1998-07-14 Dana Corporation Balance weight and method of securing same to a rotatable tubular body
USD407696S (en) * 1997-08-20 1999-04-06 Tokyo Electron Limited Inner tube for use in a semiconductor wafer heat processing apparatus
US20030197129A1 (en) 2001-12-31 2003-10-23 Applied Materials, Inc. Ion sources for ion implantation apparatus
CN1460130A (en) 1999-11-19 2003-12-03 纳米表面系统公司 Deposition system and method of inorganic/organic dielectric thin film
US20060132068A1 (en) * 2004-12-16 2006-06-22 General Electric Company Ion source apparatus and method
US7102139B2 (en) 2005-01-27 2006-09-05 Varian Semiconductor Equipment Associates, Inc. Source arc chamber for ion implanter having repeller electrode mounted to external insulator
US7276847B2 (en) 2000-05-17 2007-10-02 Varian Semiconductor Equipment Associates, Inc. Cathode assembly for indirectly heated cathode ion source
US20080166629A1 (en) * 2007-01-04 2008-07-10 Wen-Chin Shiau Battery receptacle having two pairs of anode and cathode terminals
USD583322S1 (en) 2007-11-28 2008-12-23 Hosiden Corporation Socket for cold cathode fluorescent lamp
USD624890S1 (en) * 2008-08-18 2010-10-05 Schadeck Matthew A Anode and cathode assembly
US20120231407A1 (en) * 2011-03-07 2012-09-13 Tokyo Electron Limited Thermal treatment apparatus
US20140042022A1 (en) 2012-08-09 2014-02-13 Palmaz Scientific, Inc. Inverted cylindrical magnetron (icm) system and methods of use
USD714132S1 (en) * 2012-10-23 2014-09-30 Linzer Products Corp. Pole adapter
WO2014164111A1 (en) 2013-03-11 2014-10-09 Varian Semiconductor Equipment Associates, Inc. An ion source
USD720707S1 (en) * 2013-06-28 2015-01-06 Hitachi Kokusai Electric Inc. Reaction tube
JP2015170451A (en) 2014-03-06 2015-09-28 日新イオン機器株式会社 Ion source, and ion irradiation device using the same
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
US9543110B2 (en) 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
USD818961S1 (en) * 2016-02-10 2018-05-29 Hitachi Kokusai Electric Inc. Insulation unit cover of semiconductor manufacturing apparatus
US20180254166A1 (en) 2017-03-06 2018-09-06 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion generator
US10748738B1 (en) 2019-03-18 2020-08-18 Applied Materials, Inc. Ion source with tubular cathode
US11127557B1 (en) * 2020-03-12 2021-09-21 Applied Materials, Inc. Ion source with single-slot tubular cathode

Patent Citations (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358256A (en) * 1965-04-08 1967-12-12 Sansui Electric Co Miniature low frequency transformer
US3682017A (en) * 1970-02-20 1972-08-08 Interelectric Ag Balanced cylindrical coil for an electrical machine
US5778737A (en) * 1983-09-29 1998-07-14 Dana Corporation Balance weight and method of securing same to a rotatable tubular body
US4774437A (en) 1986-02-28 1988-09-27 Varian Associates, Inc. Inverted re-entrant magnetron ion source
USD338105S (en) * 1990-11-01 1993-08-10 Karch Michael A Nail coil caddy
US5262652A (en) 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
US5763890A (en) 1996-10-30 1998-06-09 Eaton Corporation Cathode mounting for ion source with indirectly heated cathode
USD407696S (en) * 1997-08-20 1999-04-06 Tokyo Electron Limited Inner tube for use in a semiconductor wafer heat processing apparatus
CN1460130A (en) 1999-11-19 2003-12-03 纳米表面系统公司 Deposition system and method of inorganic/organic dielectric thin film
US7276847B2 (en) 2000-05-17 2007-10-02 Varian Semiconductor Equipment Associates, Inc. Cathode assembly for indirectly heated cathode ion source
US20030197129A1 (en) 2001-12-31 2003-10-23 Applied Materials, Inc. Ion sources for ion implantation apparatus
US20060132068A1 (en) * 2004-12-16 2006-06-22 General Electric Company Ion source apparatus and method
US7102139B2 (en) 2005-01-27 2006-09-05 Varian Semiconductor Equipment Associates, Inc. Source arc chamber for ion implanter having repeller electrode mounted to external insulator
US20080166629A1 (en) * 2007-01-04 2008-07-10 Wen-Chin Shiau Battery receptacle having two pairs of anode and cathode terminals
USD583322S1 (en) 2007-11-28 2008-12-23 Hosiden Corporation Socket for cold cathode fluorescent lamp
USD624890S1 (en) * 2008-08-18 2010-10-05 Schadeck Matthew A Anode and cathode assembly
US20120231407A1 (en) * 2011-03-07 2012-09-13 Tokyo Electron Limited Thermal treatment apparatus
US20140042022A1 (en) 2012-08-09 2014-02-13 Palmaz Scientific, Inc. Inverted cylindrical magnetron (icm) system and methods of use
USD714132S1 (en) * 2012-10-23 2014-09-30 Linzer Products Corp. Pole adapter
WO2014164111A1 (en) 2013-03-11 2014-10-09 Varian Semiconductor Equipment Associates, Inc. An ion source
USD720707S1 (en) * 2013-06-28 2015-01-06 Hitachi Kokusai Electric Inc. Reaction tube
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
US9543110B2 (en) 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
JP2015170451A (en) 2014-03-06 2015-09-28 日新イオン機器株式会社 Ion source, and ion irradiation device using the same
USD818961S1 (en) * 2016-02-10 2018-05-29 Hitachi Kokusai Electric Inc. Insulation unit cover of semiconductor manufacturing apparatus
US20180254166A1 (en) 2017-03-06 2018-09-06 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion generator
US10748738B1 (en) 2019-03-18 2020-08-18 Applied Materials, Inc. Ion source with tubular cathode
US20200343071A1 (en) 2019-03-18 2020-10-29 Applied Materials, Inc. Ion source with tubular cathode
US11127557B1 (en) * 2020-03-12 2021-09-21 Applied Materials, Inc. Ion source with single-slot tubular cathode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
International Search Report dated Jun. 7, 2021, for the International Patent Application No. PCT/US2021/017608, filed on Feb. 11, 2021, 3 pages.
Written Opinion dated Jun. 7, 2021, for the International Patent Application No. PCT/US2021/017608, filed on Feb. 11, 2021, 4 pages.

Also Published As

Publication number Publication date
US11631567B2 (en) 2023-04-18
US20210383995A1 (en) 2021-12-09

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