USRE47410E1 - Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device - Google Patents
Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device Download PDFInfo
- Publication number
- USRE47410E1 USRE47410E1 US15/360,941 US201615360941A USRE47410E US RE47410 E1 USRE47410 E1 US RE47410E1 US 201615360941 A US201615360941 A US 201615360941A US RE47410 E USRE47410 E US RE47410E
- Authority
- US
- United States
- Prior art keywords
- wiring pattern
- electrode pad
- acoustic wave
- surface acoustic
- stud bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/0004—Impedance-matching networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/058—Holders or supports for surface acoustic wave devices
- H03H9/059—Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/48—Coupling means therefor
- H03H9/52—Electric coupling means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
Definitions
- the present invention relates to a surface acoustic wave device and a method of adjusting an LC component thereof, especially a surface acoustic wave device mounted on a base substrate by a stud bump and a method of adjusting an LC component thereof.
- a conventional surface acoustic wave (SAW) device is disclosed in, for example, Japanese Patent Application Kokai Number 2000-114916 (page 4-5 and FIGS. 1-2 ).
- SAW surface acoustic wave
- an SAW chip containing an interdigital transducer (IDT) is mounted on a base substrate by the flip chip mounting method.
- Each of the electrode pads has a top end which is provided with a bump and disposed in the center of the SAW chip. Since the bump is disposed in the vicinity of the center of the SAW chip, the stress produced by the difference in the coefficient of thermal expansion between the SAW chip and the base substrate is reduced, thus preventing wiring defective caused by heat.
- the characteristics of individual device are often not uniform if the thickness and shape of the IDT and the electrode pad are uneven.
- the influence of the uneven thickness and shape is large.
- an SAW filter such as an SAW duplexer
- the position of the bump is limited to a specific area of the device so that the degree of freedom of the bump position is hot large and it is difficult to adjust the LC component of the individual SAW device and also the LC component at a specific position in the SAW device.
- a surface acoustic wave device comprises a piezoelectric substrate, at least one IDTs, at least one electrode pad, and at least one stud bump.
- IDT is provided on the piezoelectric substrate and electrically connected to the electrode pad.
- the stud bump is disposed on the electrode pad such that the LC component of the surface acoustic wave device has a predetermined value.
- the IDT is an abbreviation for inter-digital transducer and a kind of converter which converts an electrical signal to a surface acoustic wave and returns the surface acoustic wave to the electrical signal in collaboration with the piezoelectric substrate, thus transmitting the electrical signal.
- the stud bump is disposed on the electrode pad, adjusting the position of the disposition such that the LC component of the surface acoustic wave device has a predetermined value.
- the LC component can be adjusted for an individual IDT by adjusting the disposition position on the electrode pad connected to the individual IDT.
- the SAW device is an SAW filter, such as an SAW duplexer, even if the resonant frequency of the SAW filter is fluctuated by the manufacturing variations, the resonant frequency can be corrected by adjusting the LC component.
- FIG. 1 is a top view of an SAW chip according to the first embodiment of the present invention.
- FIG. 2 is a top view of an SAW chip according to the second embodiment of the present invention.
- FIG. 3 is a top view of an SAW chip according to the third embodiment of the present invention.
- FIG. 4 is an illustration of the SAW chip showing an example of mounting the SAW onto a base substrate.
- FIG. 1 is a top view of a surface acoustic wave (SAW) chip 100 according to the first embodiment of the present invention.
- SAW surface acoustic wave
- the SAW chip 100 comprises IDTs 2 a- 2 e, reflectors 3 a-ah 3a-3h, and electrode pads 4 a- 4 d, formed on a piezoelectric substrate 1 . Stud bumps 5 a- 5 k, which become connection portions when mounting the SAW chip 100 onto a base substrate, are provided on the electrode pads 4 a- 4 d.
- the piezoelectric substrate 1 is made of a piezoelectric material, such as LiTaO 3 , LiNbO 3 , and quartz crystal.
- the IDTs 2 a- 2 e are made of Al or an Al alloy containing a small amount of Cu.
- the IDTs 2 a- 2 e are electrodes having a shape of a comb, wherein the teeth of the comb are opposed to each other.
- the IDTs 2 a- 2 e convert a high frequency electrical signal to a surface acoustic wave and re-convert and output the surface acoustic wave to the high frequency electrical signal.
- the reflectors 3 a- 3 h are disposed at sides of the IDTs 2 a- 2 e.
- the reflectors 3 a and 3 b make surface acoustic wave generated from the IDTs 2 a and 2 b reflect and travel in multiple by resilient and electrical disturbing effect, thus generating standing waves by overlapping permeating waves and reflected waves.
- the reflectors 3 c- 3 h are similar to the reflectors 3 a and 3 b.
- the electrode pad 4 a is electrically connected to the input portion of the IDTs 2 2a and 2 d, and the electrode pads 4 b, 4 c, and 4 d are electrically connected to the output portions of the IDTs 2 e, 2 c, and 2 b, respectively.
- the electrode pad 4 a has an elongated top view having a substantially reverse “C” and the stud bumps electrode pads 4 b, 4 c, and 4 d are disposed at arbitrary positions thereof.
- the electrode pads 4 b, 4 c, and 4 d have also elongated forms, respectively, and the stud bumps 5 h- 5 k are disposed at arbitrary positions thereof.
- the electrode pad 4 b is extended in a widthwise direction thereof too so that the position of the stud bump 5 h can be selected from wide range of position in the widthwise direction.
- the IDTs 2 a- 2 e, the reflectors 3 e- 3 h, and the electrode pads 4 a- 4 d are formed by the ordinary method of forming a metal film, which includes the processes of resist coating, exposure, and etching performed after metal sputtering.
- the electrode pads 4 a- 4 d can be formed through the processes of forming an electrode film, photolithography, and etching like wire bonding pads.
- Au balls are formed on the electrode pads 4 a- 4 d by exclusive bonder to prove the stud bumps 5 a- 5 k. That is the stud bumps 5 a- 5 k are crimped on the electrode pads 4 a- 4 d by using ultrasonic waves or heat after deciding the positions of the stud bumps 5 a- 5 k.
- the stud bumps 5 a- 5 k may be made of AuPd, Cu, and solder instead of Au.
- electrode pads 4 a- 4 d corresponding to the electrode pads 4 a- 4 d 4a′-4d′ are formed on a base substrate 20 .
- conductive paste containing solder is coated on the stud bumps 5 ( 5 a, 5 g, 5 h, 5 I, and 5 k) or the electrode pads 4 a′- 4 d′ 5d′ and the SAW chip 100 is disposed on the base substrate 20 such that the electrode pads 4 a- 4 d mate with the electrode pads 4 a′- 4 d′, respectively.
- the stud bumps 5 are mated with the stud bumps 5 ′ ( 5 a′, 5 g′, 5 h′, 5 i′, and 5 k′) in the electrode pads 4 a′- 4 d′.
- the stud bumps 5 a, 5 g, 5 h, 5 i, and 5 k are described, however, the other stud bumps are made in the similar way.
- the SAW Chip 100 and the base substrate 20 are fixed so that the electrode pads 4 4a, 4b, 4c, and 4d are electrically connected to the electrode pads 4 ′ through the stud bumps 5 . Even when the number of connection points of the stud bumps 5 on the electrode pads 4 is increased or decreased or the connection position of the stud bumps 5 on the electrode pads 4 is changed, the SAW chip 100 can be mounted onto the base substrate 20 .
- the reflectors 3 3a-3h are provided at the sides of the IDTs 2 2a-2e, however, the reflectors 3 are provided at the sides of the IDTs 2, however, the reflectors 3 may be omitted if the internal reflection of the IDTs 2 can be used.
- the adjustment of an L component can be done by bonding one of the pads of the SAW chip to a specific pad or a plurality of pads of the package, or by disposing the pads such that the distance between the pads of the SAW chip and the package is made large.
- it has been extremely difficult to adjust the L component because the positions and the number of the stud bumps are fixed. That is, even if it is found that desired L component was not obtained by manufacturing variations after designing the layout of IDTs, electrode pads, etc., the L component can not be adjusted because of the fixed positions and number of the stud bumps. Consequently, the pattern layout must be changed.
- the number of the stud bumps 5 provided in the electrode pad 4 can be increased or decreased and the stud bumps 5 are disposed at arbitrary positions so that the LC component of the SAW chip 100 can be adjusted. If the LC component is adjusted for each of the electrode pads 4 a- 4 d, the LC component at a specific position of the SAW chip 100 can be adjusted. The LC component can be also adjusted by changing the length of an open stub, which is provided in front of each of the stud bumps 5 in the elongated electrode pad 4 , by changing the positioning of the stud bumps 5 .
- the LC component can be adjusted to adjust the resonant frequency by changing the number and positions of the stud bumps 5 .
- the characteristics of the finished product, wherein the SAW chip 100 is mounted on the base substrate 20 and packaged, are confirmed in the ordinary test after packaging to determine the optimum positions and the number of the stud bumps 5 for the mass-production.
- the LC component may be adjusted by a single stud bump 5 .
- the adjustment of the LC component by a single stud bump 5 simplifies the manufacturing process and reduces the manufacturing cost, while the adjustment of the LC component by a plurality of the stud bumps 5 increases the adjusting range of the LC component.
- the LC component can be adjusted by changing the shape and size of the wiring pattern of the electrode pads 4 without changing the positions of the stud bumps 5 . Also, the adjustment range of the LC component adjustable by the positioning of the stud bumps 5 can be changed by changing the shape and size of the wiring pattern of the electrode pads 4 . In addition, since there is parasitic capacitance component between the electrode pads 4 and the IDTs 2 and also there is parasitic capacitance component between the wiring patterns if the wiring patterns are insulated therebetween like the electrode pads 4 a, the C component can be adjusted by changing the shape and size of the electrode pads 4 .
- FIG. 2 is a top view of the SAW chip 100 according to the second embodiment of the present invention.
- the same reference numerals are given to such elements as having the similar construction as in the first embodiment and the explanation thereof is omitted.
- a wiring pattern of an electrode pad 41 according to the second embodiment is snaked.
- the electrode pad 41 is composed of the first to fourth belt-like wiring patterns 41 a- 41 d.
- the four wiring patterns 41 a- 41 d are provided in substantially parallel to each other and the adjacent wiring patterns are connected to each other alternately at opposed ends thereof.
- the distance between the adjacent wiring patterns is made smaller than a diameter of the stud bumps 5 .
- Connection portions of a plurality of wiring patterns of the electrode pad 41 are enlarged so that the stud bumps 5 can be provided at the connection portions.
- the entire part of the stud bump 5 a is disposed in the connection portion of the electrode pad 41 and the stud bumps 5 b- 5 h are disposed such that they are overlapped with two adjacent wiring patterns to cause a short-circuit therebetween.
- the number of the stud bumps 5 can be increased or decreased.
- the stud bumps 5 can be disposed at arbitrary positions such that they are overlapped with the connection portions between the wiring patterns or two adjacent wiring patterns.
- the width of the wiring pattern of the electrode pads 4 may be varied.
- the width of the wiring pattern may be enlarged so that the entire part of the stud bump 5 is disposed in the wiring pattern.
- the positions and the number of the stud bumps 5 can be changed so that the LC component can be adjusted in the same way as in the first embodiment.
- the wiring pattern of the electrode pads 41 is snaked and the adjacent wiring patterns are electrically short-circuited by the stud bump 5 , which produces the same effect as when the L components of the wiring patterns are connected in parallel. Accordingly, the L component of impedance can be easily reduced. Also, the direct resistive component of the wiring pattern can be easily reduced by the same reason.
- the LC component may be adjusted by a single stud bump 5 .
- the adjustment of the LC component by a single stud bump 5 simplifies the manufacturing process and reduces the manufacturing cost, while the adjustment of the LC component by a plurality of the stud bumps 5 expands the adjustment range of the LC component.
- the LC component can be adjusted by changing the shape and size of the wiring pattern of the electrode pads 41 without changing the positions of the stud bumps 5 . Also, the adjustment range of the LC component adjustable by the positioning of the stud bumps 5 can be changed by changing the shape and size of the wiring pattern of the electrode pads 41 . In addition, there is parasitic capacitance component between the wiring patterns disposed in substantially parallel and between the wiring patterns and the IDTs 2 so that the C component can be adjusted by changing the shape and size of the wiring patterns of the electrode pads 41 .
- FIG. 3 is a top view of the SAW chip 100 according to the third embodiment of the present invention.
- Electrode pads 42 a- 43 d 42a-42c according to the third embodiment are composed of a plurality of island patterns which are electrically insulating therebetween. The distance between the adjacent island patterns is made smaller than a diameter of the stud bump 5 . That is, the stud bump 5 can be disposed such that it is overlapped with two adjacent island patterns. The number of the stud bumps 5 provided in the respective electrode pads 42 a- 42 c is increased or decreased.
- the stud bump 5 can be disposed on a single island pattern like the stud bump 5 a or on two adjacent patterns like the stud bumps 5 b- 5 e.
- the number of the stud bumps 5 provided in the respective electrode pads 42 a- 42 c is determined according to the shape and size of the respective island patterns and the number of the island patterns.
- the positions and the number of the stud bumps 5 can be changed so that the LC component can be adjusted in the same way as in the first embodiment.
- the island patterns are put in the same condition as if they are connected to each other from the beginning by connecting them by the stud bumps 5 .
- the degree of freedom of the electrically connected patterns according to the third embodiment is broader than that in the second embodiment, wherein the wiring patterns are connected to each other from the beginning, thus increasing the adjustment range of the LC component.
- it is made insulating between the island patterns it is easier in the third embodiment than in the first and second embodiments, wherein the wiring patterns are connected to each other from the beginning, to provide open stubs without any restriction.
- the L component and direct resistive component can be adjusted by changing the shape and size of the island pattern without changing the positions of the stud bumps 5 .
- the adjustment range of the LC component adjustable by the positioning of the stud bumps 5 can be enlarged by changing the shape and size of the island pattern.
- electrode patterns capable of electrical connection with each other at a plurality of positions are provided and stud bumps are disposed such that a desirable LC component of the surface acoustic wave device at electrode pads is obtained so that it is easy to adjust the LC component.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (37)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/360,941 USRE47410E1 (en) | 2003-04-16 | 2016-11-23 | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003111296A JP4381714B2 (en) | 2003-04-16 | 2003-04-16 | Surface acoustic wave device, surface acoustic wave device, and method of manufacturing surface acoustic wave device |
| JP2003-111296 | 2003-04-16 | ||
| US10/822,731 US8416038B2 (en) | 2003-04-16 | 2004-04-13 | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
| US13/857,072 US8896397B2 (en) | 2003-04-16 | 2013-04-04 | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
| US15/360,941 USRE47410E1 (en) | 2003-04-16 | 2016-11-23 | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/857,072 Reissue US8896397B2 (en) | 2003-04-16 | 2013-04-04 | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USRE47410E1 true USRE47410E1 (en) | 2019-05-28 |
Family
ID=33471890
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/822,731 Active 2030-05-05 US8416038B2 (en) | 2003-04-16 | 2004-04-13 | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
| US15/360,941 Expired - Fee Related USRE47410E1 (en) | 2003-04-16 | 2016-11-23 | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/822,731 Active 2030-05-05 US8416038B2 (en) | 2003-04-16 | 2004-04-13 | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US8416038B2 (en) |
| JP (1) | JP4381714B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8896397B2 (en) * | 2003-04-16 | 2014-11-25 | Intellectual Ventures Fund 77 Llc | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
| JP4381714B2 (en) * | 2003-04-16 | 2009-12-09 | Okiセミコンダクタ株式会社 | Surface acoustic wave device, surface acoustic wave device, and method of manufacturing surface acoustic wave device |
| JP4601411B2 (en) * | 2004-12-20 | 2010-12-22 | 京セラ株式会社 | Surface acoustic wave device and communication device |
| JP4601415B2 (en) * | 2004-12-24 | 2010-12-22 | 京セラ株式会社 | Surface acoustic wave device and communication device |
| DE102010008774B4 (en) * | 2010-02-22 | 2015-07-23 | Epcos Ag | Microacoustic filter with compensated crosstalk and compensation method |
Citations (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100519A (en) | 1981-12-11 | 1983-06-15 | Hitachi Ltd | surface acoustic wave device |
| JPS60116216A (en) | 1984-10-22 | 1985-06-22 | Hitachi Ltd | Surface acoustic wave device |
| JPS62174934A (en) * | 1986-01-28 | 1987-07-31 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JPH02306705A (en) | 1989-05-22 | 1990-12-20 | Murata Mfg Co Ltd | Surface acoustic wave oscillator |
| JPH03285338A (en) * | 1990-04-02 | 1991-12-16 | Toshiba Corp | Bonding pad |
| JPH06164309A (en) | 1992-11-17 | 1994-06-10 | Fujitsu Ltd | Surface acoustic wave filter |
| US5581141A (en) | 1993-10-08 | 1996-12-03 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave filter |
| JPH09162676A (en) | 1995-12-06 | 1997-06-20 | Japan Energy Corp | Surface acoustic wave device |
| US5786738A (en) | 1995-05-31 | 1998-07-28 | Fujitsu Limited | Surface acoustic wave filter duplexer comprising a multi-layer package and phase matching patterns |
| US5867074A (en) * | 1994-03-02 | 1999-02-02 | Seiko Epson Corporation | Surface acoustic wave resonator, surface acoustic wave resonator unit, surface mounting type surface acoustic wave resonator unit |
| JPH11186691A (en) | 1997-12-18 | 1999-07-09 | Murata Mfg Co Ltd | Trimming method of circuit element and circuit element using the same |
| JP2000114916A (en) | 1998-09-29 | 2000-04-21 | Nec Corp | Surface acoustic wave device and method of manufacturing the same |
| JP2000156625A (en) | 1998-11-19 | 2000-06-06 | Nec Corp | Surface acoustic wave filter |
| US6137380A (en) | 1996-08-14 | 2000-10-24 | Murata Manufacturing, Co., Ltd | Surface acoustic wave filter utilizing a particularly placed spurious component of a parallel resonator |
| US6242991B1 (en) | 1994-11-10 | 2001-06-05 | Fujitsu Limited | Surface acoustic wave filter having a continuous electrode for connection of multiple bond wires |
| JP2001185977A (en) | 1999-12-24 | 2001-07-06 | Kyocera Corp | Surface acoustic wave device and band frequency adjustment method thereof |
| US6265300B1 (en) * | 1993-03-31 | 2001-07-24 | Intel Corporation | Wire bonding surface and bonding method |
| US6268654B1 (en) * | 1997-04-18 | 2001-07-31 | Ankor Technology, Inc. | Integrated circuit package having adhesive bead supporting planar lid above planar substrate |
| US6414415B1 (en) * | 1999-02-18 | 2002-07-02 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device and method for manufacturing the same |
| US6503820B1 (en) * | 1999-10-04 | 2003-01-07 | Koninklijke Philips Electronics N.V. | Die pad crack absorption system and method for integrated circuit chip fabrication |
| JP2003008394A (en) | 2001-06-19 | 2003-01-10 | Murata Mfg Co Ltd | Surface acoustic wave device and communication equipment mounting the same |
| US6507112B1 (en) * | 2000-01-09 | 2003-01-14 | Nec Compound Semiconductor Devices, Ltd. | Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads |
| US20030058066A1 (en) | 2000-08-21 | 2003-03-27 | Norio Taniguchi | Surface acoustic wave filter device |
| US6552631B2 (en) | 2000-06-30 | 2003-04-22 | Oki Electric Industry Co., Ltd. | Resonator-type saw filter with independent ground patterns for interdigital transducers and reflectors |
| US6577209B2 (en) | 2000-03-21 | 2003-06-10 | Sanyo Electric Co., Ltd. | Surface acoustic wave device with inductor means for correcting impedance imbalance between input and output electrodes |
| US6727934B2 (en) * | 2001-05-31 | 2004-04-27 | Pentax Corporation | Semiconductor laser driving apparatus and laser scanner |
| US6747530B1 (en) | 1999-07-13 | 2004-06-08 | Epcos Ag | Surface acoustic wave (saw) filter of the reactance filter type exhibiting improved stop band suppression and method for optimizing the stop band suppression |
| US6765456B2 (en) | 2001-12-17 | 2004-07-20 | Oki Electric Industry Co., Ltd. | Surface acoustic wave duplexer and portable communication device using the same |
| US6786392B2 (en) * | 2001-11-27 | 2004-09-07 | Nec Electronics Corporation | Wire bonding device and wire bonding method |
| US6879086B2 (en) * | 2002-08-28 | 2005-04-12 | Murata Manufacturing Co., Ltd. | Surface acoustic wave apparatus and communication apparatus using the same |
| US6882249B2 (en) * | 2000-06-27 | 2005-04-19 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
| US6946950B1 (en) * | 1999-07-12 | 2005-09-20 | Matsushita Electric Industrial Co., Ltd. | Mobile body discrimination apparatus for rapidly acquiring respective data sets transmitted through modulation of reflected radio waves by transponders which are within a communication region of an interrogator apparatus |
| US6951047B2 (en) * | 2002-07-31 | 2005-10-04 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a surface acoustic wave element |
| US7064433B2 (en) * | 2004-03-01 | 2006-06-20 | Asm Technology Singapore Pte Ltd | Multiple-ball wire bonds |
| US7116187B2 (en) | 2001-09-25 | 2006-10-03 | Tdk Corporation | Saw element and saw device |
| US7209011B2 (en) | 2000-05-25 | 2007-04-24 | Silicon Laboratories Inc. | Method and apparatus for synthesizing high-frequency signals for wireless communications |
| US7227429B2 (en) * | 2003-03-31 | 2007-06-05 | Fujitsu Media Devices Limited | Surface acoustic wave device and method of fabricating the same |
| US7495342B2 (en) * | 1992-10-19 | 2009-02-24 | International Business Machines Corporation | Angled flying lead wire bonding process |
| US8416038B2 (en) * | 2003-04-16 | 2013-04-09 | Intellectual Ventures Fund 77 Llc | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
-
2003
- 2003-04-16 JP JP2003111296A patent/JP4381714B2/en not_active Expired - Fee Related
-
2004
- 2004-04-13 US US10/822,731 patent/US8416038B2/en active Active
-
2016
- 2016-11-23 US US15/360,941 patent/USRE47410E1/en not_active Expired - Fee Related
Patent Citations (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100519A (en) | 1981-12-11 | 1983-06-15 | Hitachi Ltd | surface acoustic wave device |
| JPS60116216A (en) | 1984-10-22 | 1985-06-22 | Hitachi Ltd | Surface acoustic wave device |
| JPS62174934A (en) * | 1986-01-28 | 1987-07-31 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JPH02306705A (en) | 1989-05-22 | 1990-12-20 | Murata Mfg Co Ltd | Surface acoustic wave oscillator |
| JPH03285338A (en) * | 1990-04-02 | 1991-12-16 | Toshiba Corp | Bonding pad |
| US7495342B2 (en) * | 1992-10-19 | 2009-02-24 | International Business Machines Corporation | Angled flying lead wire bonding process |
| JPH06164309A (en) | 1992-11-17 | 1994-06-10 | Fujitsu Ltd | Surface acoustic wave filter |
| US6265300B1 (en) * | 1993-03-31 | 2001-07-24 | Intel Corporation | Wire bonding surface and bonding method |
| US5581141A (en) | 1993-10-08 | 1996-12-03 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave filter |
| US5867074A (en) * | 1994-03-02 | 1999-02-02 | Seiko Epson Corporation | Surface acoustic wave resonator, surface acoustic wave resonator unit, surface mounting type surface acoustic wave resonator unit |
| US6242991B1 (en) | 1994-11-10 | 2001-06-05 | Fujitsu Limited | Surface acoustic wave filter having a continuous electrode for connection of multiple bond wires |
| US5786738A (en) | 1995-05-31 | 1998-07-28 | Fujitsu Limited | Surface acoustic wave filter duplexer comprising a multi-layer package and phase matching patterns |
| JPH09162676A (en) | 1995-12-06 | 1997-06-20 | Japan Energy Corp | Surface acoustic wave device |
| US6137380A (en) | 1996-08-14 | 2000-10-24 | Murata Manufacturing, Co., Ltd | Surface acoustic wave filter utilizing a particularly placed spurious component of a parallel resonator |
| US6268654B1 (en) * | 1997-04-18 | 2001-07-31 | Ankor Technology, Inc. | Integrated circuit package having adhesive bead supporting planar lid above planar substrate |
| JPH11186691A (en) | 1997-12-18 | 1999-07-09 | Murata Mfg Co Ltd | Trimming method of circuit element and circuit element using the same |
| JP2000114916A (en) | 1998-09-29 | 2000-04-21 | Nec Corp | Surface acoustic wave device and method of manufacturing the same |
| US20020057034A1 (en) * | 1998-09-29 | 2002-05-16 | Mitsuru Ishikawa | Surface elastic wave device having bumps in a definite area on the device and method for manufacturing the same |
| JP2000156625A (en) | 1998-11-19 | 2000-06-06 | Nec Corp | Surface acoustic wave filter |
| US6414415B1 (en) * | 1999-02-18 | 2002-07-02 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device and method for manufacturing the same |
| US6946950B1 (en) * | 1999-07-12 | 2005-09-20 | Matsushita Electric Industrial Co., Ltd. | Mobile body discrimination apparatus for rapidly acquiring respective data sets transmitted through modulation of reflected radio waves by transponders which are within a communication region of an interrogator apparatus |
| US6747530B1 (en) | 1999-07-13 | 2004-06-08 | Epcos Ag | Surface acoustic wave (saw) filter of the reactance filter type exhibiting improved stop band suppression and method for optimizing the stop band suppression |
| US6503820B1 (en) * | 1999-10-04 | 2003-01-07 | Koninklijke Philips Electronics N.V. | Die pad crack absorption system and method for integrated circuit chip fabrication |
| JP2001185977A (en) | 1999-12-24 | 2001-07-06 | Kyocera Corp | Surface acoustic wave device and band frequency adjustment method thereof |
| US6507112B1 (en) * | 2000-01-09 | 2003-01-14 | Nec Compound Semiconductor Devices, Ltd. | Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads |
| US6577209B2 (en) | 2000-03-21 | 2003-06-10 | Sanyo Electric Co., Ltd. | Surface acoustic wave device with inductor means for correcting impedance imbalance between input and output electrodes |
| US7209011B2 (en) | 2000-05-25 | 2007-04-24 | Silicon Laboratories Inc. | Method and apparatus for synthesizing high-frequency signals for wireless communications |
| US6882249B2 (en) * | 2000-06-27 | 2005-04-19 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
| US6552631B2 (en) | 2000-06-30 | 2003-04-22 | Oki Electric Industry Co., Ltd. | Resonator-type saw filter with independent ground patterns for interdigital transducers and reflectors |
| US20030058066A1 (en) | 2000-08-21 | 2003-03-27 | Norio Taniguchi | Surface acoustic wave filter device |
| US6727934B2 (en) * | 2001-05-31 | 2004-04-27 | Pentax Corporation | Semiconductor laser driving apparatus and laser scanner |
| JP2003008394A (en) | 2001-06-19 | 2003-01-10 | Murata Mfg Co Ltd | Surface acoustic wave device and communication equipment mounting the same |
| US7116187B2 (en) | 2001-09-25 | 2006-10-03 | Tdk Corporation | Saw element and saw device |
| US6786392B2 (en) * | 2001-11-27 | 2004-09-07 | Nec Electronics Corporation | Wire bonding device and wire bonding method |
| US6765456B2 (en) | 2001-12-17 | 2004-07-20 | Oki Electric Industry Co., Ltd. | Surface acoustic wave duplexer and portable communication device using the same |
| US6951047B2 (en) * | 2002-07-31 | 2005-10-04 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a surface acoustic wave element |
| US6879086B2 (en) * | 2002-08-28 | 2005-04-12 | Murata Manufacturing Co., Ltd. | Surface acoustic wave apparatus and communication apparatus using the same |
| US7227429B2 (en) * | 2003-03-31 | 2007-06-05 | Fujitsu Media Devices Limited | Surface acoustic wave device and method of fabricating the same |
| US8416038B2 (en) * | 2003-04-16 | 2013-04-09 | Intellectual Ventures Fund 77 Llc | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device |
| US7064433B2 (en) * | 2004-03-01 | 2006-06-20 | Asm Technology Singapore Pte Ltd | Multiple-ball wire bonds |
Non-Patent Citations (6)
| Title |
|---|
| Office Action dated Apr. 3, 2014 for U.S. Appl. No. 13/857,072, 15 pages. |
| Office Action dated Aug. 22, 2013 for U.S. Appl. No. 13/857,072, 55 pages. |
| Office Action dated Jul. 7, 2011 for U.S. Appl. No. 10/822,731, 35 pages. |
| Office Action dated May 17, 2012 for U.S. Appl. No. 10/822,731, 37 pages. |
| Office Action dated Oct. 25, 2011 for U.S. Appl. No. 10/822,731, 8 pages. |
| U.S. Appl. No. 10/822,731, filed Apr. 13, 2004. |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4381714B2 (en) | 2009-12-09 |
| JP2004320425A (en) | 2004-11-11 |
| US20050225410A1 (en) | 2005-10-13 |
| US8416038B2 (en) | 2013-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| USRE47410E1 (en) | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device | |
| US7283016B2 (en) | Balanced acoustic wave filter and acoustic wave filter | |
| US6919777B2 (en) | Surface acoustic wave filter device | |
| US7211925B2 (en) | Surface acoustic wave device and branching filter | |
| JP2003522453A (en) | Programmable surface acoustic wave (SAW) filter | |
| JP3869919B2 (en) | Surface acoustic wave device | |
| US6946929B2 (en) | Surface acoustic wave device having connection between elements made via a conductor not on the piezoelectric substrate | |
| US8896397B2 (en) | Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device | |
| KR100475369B1 (en) | Surface acoustic wave device | |
| JPH09162691A (en) | Device having surface acoustic wave element and its manufacture | |
| US8022556B2 (en) | Electrical component having a reduced substrate area | |
| JP4095311B2 (en) | Surface acoustic wave filter device | |
| JPH05160664A (en) | Surface acoustic wave element, its production, and surface acoustic wave device | |
| JP3638431B2 (en) | Surface acoustic wave device | |
| JP2002076828A (en) | Surface acoustic wave device | |
| JP2000165193A (en) | Surface acoustic wave filter chip and surface acoustic wave filter device | |
| JP3647796B2 (en) | Package substrate, integrated circuit device using the same, and method of manufacturing integrated circuit device | |
| KR100437496B1 (en) | Surface Acoustic Wave Filter | |
| JP3253333B2 (en) | Method of adjusting characteristics of surface acoustic wave filter | |
| JPH03128518A (en) | surface acoustic wave device | |
| JPH10335964A (en) | Surface acoustic wave device | |
| JP2007104047A (en) | Surface acoustic wave device and manufacturing method thereof | |
| JP2022071324A (en) | Electronic components | |
| JP2000295070A (en) | Surface acoustic wave device | |
| JPH11136086A (en) | Electrode structure of serial arm resonator of acoustic wave filter for very high frequency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: INTELLECTUAL VENTURES HOLDING 81 LLC, NEVADA Free format text: MERGER;ASSIGNOR:INTELLECTUAL VENTURES FUND 77 LLC;REEL/FRAME:040413/0964 Effective date: 20150827 Owner name: INTELLECTUAL VENTURES FUND 77 LLC, NEVADA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LAPIS SEMICONDUCTOR CO., LTD;REEL/FRAME:040680/0893 Effective date: 20120302 |
|
| FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
| LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |