USRE39001E1 - Laser cutting method for forming magnetic recording head sliders - Google Patents
Laser cutting method for forming magnetic recording head sliders Download PDFInfo
- Publication number
- USRE39001E1 USRE39001E1 US10/330,975 US33097502A USRE39001E US RE39001 E1 USRE39001 E1 US RE39001E1 US 33097502 A US33097502 A US 33097502A US RE39001 E USRE39001 E US RE39001E
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- United States
- Prior art keywords
- laser
- line
- wafer
- sliders
- laser spot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000003698 laser cutting Methods 0.000 title description 2
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 abstract description 11
- 239000000203 mixture Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 55
- 239000000463 material Substances 0.000 description 11
- 238000000608 laser ablation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002156 mixing Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
- G11B5/3173—Batch fabrication, i.e. producing a plurality of head structures in one batch
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/10—Structure or manufacture of housings or shields for heads
- G11B5/102—Manufacture of housing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
Definitions
- This invention relates generally to the manufacture of air-bearing sliders used for supporting the read/write heads in magnetic recording hard disk drives, and more particularly to a method for separating sliders from rows of uncut sliders.
- each magnetic recording data storage disk surface has an associated slider.
- the slider has a side that faces the disk that includes an air-bearing surface (ABS), and a back or trailing side that supports the patterned read/write head.
- ABS air-bearing surface
- the disks are rotated and the sliders are supported with their ABS very close to the disk surfaces. Because of the extremely close proximity of the sliders and their associated disk surfaces, and the high stresses encountered when the sliders are brought into contact or removed from contact with the disk surfaces, it is advantageous that the sliders have blended or rounded edges at their disk sides.
- the sliders are built in wafer form, in which a large number of magnetic read/write heads are formed using semiconductor processing techniques on the surface of a ceramic wafer. Typically up to 20,000 heads can be patterned on a 5-inch diameter wafer.
- the wafer is formed of a ceramic composite material containing TiC and Al 2 O 3 , as well as trace amounts of other materials, such as MgO.
- the wafer is cut into blocks called “quads”, the quads are cut into rows, and the rows are cut into sliders. Each of these cutting processes is typically performed with a diamond-tipped saw.
- FIG. 1A shows a wafer with the patterned read/write heads
- FIG. 2A shows a wafer row
- FIGS. 8-9 show a wafer row with partially separated sliders.
- the manufacturing cost of the sawing process is affected by several physical limitations.
- the size of the saw blade and therefore the size of the kerf area that is eradicated by the saw determines the spacing density of the sliders on a wafer. If the size of the saw kerf can be reduced, the sliders can be formed closer together and thus more sliders contained on a wafer, thereby reducing the per-slider cost.
- the sawing process with its associated large mechanical and frictional forces tearing into the slider material also produces a variety of physical damage, such as chipping, scratching, and cracking of the sliders and delamination of the patterned layers of the read/write heads. Because the sawing process includes significant rubbing it can also cause the accumulation of static electrical charge, which can damage the read/write heads when discharged. Finally, the sawing process leaves sharp comers and edges so that a separate edge blending or rounding step must be performed.
- What is needed is a method of cutting wafers into quads, quads into rows, and especially rows into sliders that produces a reduced kerf region to allow closer packing of sliders on a wafer, that reduces physical and electrical damage to the sliders and the read/write heads, and that leaves blended or rounded edges on the disk sides of the sliders.
- the invention is a method for cutting a ceramic wafer to form individual sliders for use in supporting the read/write heads in magnetic recording disk drives.
- a pulsed laser beam is directed to that surface of the row that will become the disk sides of the sliders (i.e., the sides of the sliders that will face the disks in the disk drive).
- the laser beam scribes or partially cuts a generally V-shaped trench in the row while simultaneously blending the surface edges adjacent the trench.
- the laser is pulsed as the laser spot is moved along a first scan line across the surface of the wafer row to form the trench.
- the laser spot is then moved in a direction generally perpendicular to the first scan line a distance less than the laser beam diameter, and then pulsed while the laser spot is scanned along a second line generally parallel to the first scan line. This slight offset of the laser beam during the second scan blends the edges of the wafer surface at the trench to remove protrusions formed at those edges by the first laser scan.
- the laser is then moved to the other side of the first scan line a distance less than the laser beam diameter and a third scan is made to blend the other edge. If it is desired to cut deeper into the wafer row the laser beam can be moved back to the first scan line and one or more subsequent laser scans can be formed to either cut deeper, or to cut completely through the wafer row to completely separate the sliders.
- the method of the present invention simultaneously partially cuts the sliders from the wafer row and blends the edges at the disk sides of the sliders, thereby eliminating a subsequent separate edge blending step.
- the laser cutting process allows more sliders to be formed from a single ceramic wafer since substantially less ceramic material is removed than would be removed if the conventional diamond-tipped sawing process were used.
- FIG. 1 depicts the Gaussian profile (dashed line) of the intensity of a laser spot from a single laser pulse and the theoretical cross-section of the resulting wafer surface profile (solid line) after the pulsed laser spot has been scanned along a line.
- FIG. 2 is a schematic of a wafer row showing sliders that have been partially cut by a pulsed laser using the method of the present invention.
- FIG. 3 shows the theoretical cross-section of the wafer surface profile (solid line) after the pulsed laser spot has been scanned along a first line and the wafer surface profile (dashed line) after the pulsed laser spot has been scanned along a second line laterally offset from the first line a distance equal to 20% of the laser beam diameter.
- FIG. 4 shows the theoretical cross-section of the wafer surface profile after a single pulsed laser scan (solid line), after a second scan offset 20% of the laser beam diameter toward one edge (dotted line), and after a third scan offset 20% of the laser beam diameter toward the other edge (dashed line).
- FIG. 5 is a scanning electron microscope (SEM) image of a cut made in a ceramic wafer using three pulsed laser scans according to the method of the present invention.
- the ceramic wafers from which the sliders are fabricated according to the method of the present invention are commercially available from various sources, such as 3M Corporation and Sumitomo.
- This crater results from melting and reflowing of the substrate material and from redeposition of ablated material.
- This problem is fundamental to the application of laser ablation because a transition region exists between the high intensity region above the ablation threshold and the region untouched by the laser. This transition region is called the “heat affected zone” or HAZ.
- HAZ heat affected zone
- a HAZ of some extent will always be present, and the result is some degree of cratering causing protrusion above the original surface.
- this protrusion is typically several microns or more.
- the separation between the slider and the disk surface is around 15 nanometers or less, so any protrusion of this magnitude on the disk side of the slider is clearly not acceptable.
- FIG. 1 A model of this cratering or protrusion is shown in FIG. 1 , where melting/reflowing and redeposition is depicted.
- the model is an analytical model of laser ablation of any material that absorbs laser radiation.
- the dashed line depicts the Gaussian profile of the intensity of a laser spot from a single laser pulse
- the solid line depicts a cross-section of the resulting surface profile after the pulsed laser spot has been scanned along a line.
- the profile depicts a generally V-shaped cut or trench along the scan line with a lip or protrusion of material at the edges where the walls of the trench meet the substrate surface.
- FIG. 2 is a schematic of a wafer row 10 showing sliders, such as typical uncut sliders 12 , 14 having respective read/write heads 13 , 15 patterned on their trailing surfaces, that have been partially cut along a V-shaped trench 17 by a pulsed laser using the method of the present invention.
- the problem of cratering is solved by using multiple parallel pulsed laser scans, but with successive scans being offset from the first scan line by a distance less than the diameter of the laser beam (or laser spot on the wafer surface).
- the laser beam is directed generally perpendicular to the surface 16 of the wafer row 10 .
- FIG. 3 shows results of the theoretical model used for FIG. 1 with a second laser pulse which is offset by 20% of the laser beam diameter.
- FIG. 4 shows the theoretical model cross-section of a cut after a single scan (solid line), after a second scan offset 20% of the laser beam diameter toward one edge (dotted line), and after a third scan offset 20% of the laser beam diameter toward the other edge (dashed line).
- a laser pulse of sufficient power e.g., greater than 10 microjoules for a 355 nm pulse of 30 nanosecond duration focused to a spot size of 12 micron diameter, or 18 J/cm 2
- the laser beam is directed substantially perpendicular to the wafer surface so that a laser spot is formed on the wafer surface. As the laser spot is scanned along a line the laser is pulsed and the generally overlapping sequence of these laser pulses will cut a groove or trench into the wafer row.
- SEM scanning electron microscope
- laser ablation is used for partial cutting of the sliders with no protrusions or lips at the edges, as well as controllable roundness and radius of curvature at the edges.
- the radius of curvature at the edges is controlled by the depth of each cut (i.e., laser pulse energy, pulse overlap, and pulse width during a single scan), by the lateral offset between scans and by the number of offset scans. A larger offset will cause a larger radius of curvature.
- a ceramic wafer row is partially cut or scribed to define the individual sliders, as shown by FIG. 2 .
- the laser parameters are chosen to simultaneously produce blended or rounded edges at the disk sides of the resulting sliders, and to produce narrow and sharply pointed trenches into the wafer row at the locations of the partial cuts.
- the depth of the trenches can be shallow (several microns of the 600 micron thickness of the wafer row) or deep (up to 450 microns of the 600 micron thickness).
- the shallow trenches are chosen to minimize the risk of accidental parting, cleaving, or fracture before the planned final cleaving step.
- the deeper trenches are chosen to minimize the force needed for the final cleaving step and to maximize the uniformity of the resulting sides of the sliders.
- the purpose of the partial cuts is to enable subsequent cleaving or breaking of the sliders from the wafer row at the trenches by exerting light pressure along the sides of the trenches.
- This cleaving is analogous to the method of cutting glass whereby a sheet of glass is scribed along a line and subsequently the glass is cleaved such that it fractures along this same line.
- the fracture location is precisely controlled by the placement of the trenches or scribe lines.
- the method of the present invention can also be used to make complete cuts in the wafer row and thus eliminate the need for the subsequent cleaving step.
- the advantages of the laser ablation method for partially cutting or completely cutting the wafer rows into sliders can also be applied earlier in the manufacturing process, namely to the slicing of the wafers into quads and the quads into wafer rows.
- the present invention has allowed a substantial reduction in the kerf real estate, thereby increasing the number of sliders that can be formed from a wafer. While the conventional sawing process allowed 44 “pico” (1 mm wide) sliders to be produced from a single wafer row, the method of the present invention has allowed 47 pico sliders to be produced. The gain in the number of sliders that can be cut from a row would be greater for even smaller slider formats.
- the method of the present invention can be performed on the wafer rows either before or after the row-level lapping or polishing process. Performing the laser scribing process before lapping allows the rows to be more flexible and thus reduces the bowing of the rows when they are placed in the lapping tool, thereby increasing the uniformity of the lapping process.
- the manufacturing advantages of the present invention also include a) the production of sliders with desired rounded edges at their disk sides without the need for a separate edge blending step, b) the elimination of physical damage to the sliders and their read/write heads caused by the sawing process, and c) an elimination of static charge buildup caused by the sawing process.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/330,975 USRE39001E1 (en) | 2000-01-31 | 2002-12-26 | Laser cutting method for forming magnetic recording head sliders |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/494,789 US6255621B1 (en) | 2000-01-31 | 2000-01-31 | Laser cutting method for forming magnetic recording head sliders |
| US10/330,975 USRE39001E1 (en) | 2000-01-31 | 2002-12-26 | Laser cutting method for forming magnetic recording head sliders |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/494,789 Reissue US6255621B1 (en) | 2000-01-31 | 2000-01-31 | Laser cutting method for forming magnetic recording head sliders |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USRE39001E1 true USRE39001E1 (en) | 2006-03-07 |
Family
ID=23965976
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/494,789 Ceased US6255621B1 (en) | 2000-01-31 | 2000-01-31 | Laser cutting method for forming magnetic recording head sliders |
| US10/330,975 Expired - Lifetime USRE39001E1 (en) | 2000-01-31 | 2002-12-26 | Laser cutting method for forming magnetic recording head sliders |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/494,789 Ceased US6255621B1 (en) | 2000-01-31 | 2000-01-31 | Laser cutting method for forming magnetic recording head sliders |
Country Status (1)
| Country | Link |
|---|---|
| US (2) | US6255621B1 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070272666A1 (en) * | 2006-05-25 | 2007-11-29 | O'brien James N | Infrared laser wafer scribing using short pulses |
| US20070272668A1 (en) * | 2006-05-25 | 2007-11-29 | Albelo Jeffrey A | Ultrashort laser pulse wafer scribing |
| US20090090876A1 (en) * | 2007-10-08 | 2009-04-09 | Advanced Ion Beam Technology, Inc. | Implant beam utilization in an ion implanter |
| US20110031655A1 (en) * | 2009-08-10 | 2011-02-10 | Fei Company | Gas-assisted laser ablation |
| WO2011037921A1 (en) * | 2009-09-22 | 2011-03-31 | First Solar, Inc. | System and method for tracking and removing coating from an edge of a substrate |
| WO2011123673A2 (en) | 2010-04-02 | 2011-10-06 | Electro Scientific Industries, Inc. | Improved method and apparatus for laser singulation of brittle materials |
| US20110253689A1 (en) * | 2010-04-15 | 2011-10-20 | Hon Hai Precision Industry Co., Ltd. | Method of cutting bulk amorphous alloy |
| US20120135195A1 (en) * | 2010-11-30 | 2012-05-31 | Gregory Scott Glaesemann | Methods for separating glass articles from strengthened glass substrate sheets |
| US20120135177A1 (en) * | 2010-11-30 | 2012-05-31 | Cornejo Ivan A | Methods for forming grooves and separating strengthened glass substrate sheets |
| DE102011000768A1 (en) | 2011-02-16 | 2012-08-16 | Ewag Ag | Laser processing apparatus with switchable laser arrangement and laser processing method |
| US20130192305A1 (en) * | 2011-08-10 | 2013-08-01 | Matthew L. Black | Methods for separating glass substrate sheets by laser-formed grooves |
| US20130299492A1 (en) * | 2012-05-10 | 2013-11-14 | Preco, Inc. | Odor reduction in laser processed material with curl reduction |
| US20140130548A1 (en) * | 2012-11-09 | 2014-05-15 | Yuh-Wen Lee | Method of manufacturing a touch panel |
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| US6531084B1 (en) * | 1999-12-02 | 2003-03-11 | Seagate Technology Llc | Laser edge treatment of sliders |
| US6654190B2 (en) * | 2000-05-25 | 2003-11-25 | Seagate Technology Llc | Flexible air bearing design system with independent profile mapping and height field definition for mask tiers |
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| AU2001249140A1 (en) * | 2000-09-20 | 2002-04-02 | Electro Scientific Industries, Inc. | Uv laser cutting or shape modification of brittle, high melting temperature target materials such as ceramics or glasses |
| US6676878B2 (en) | 2001-01-31 | 2004-01-13 | Electro Scientific Industries, Inc. | Laser segmented cutting |
| US20060091126A1 (en) * | 2001-01-31 | 2006-05-04 | Baird Brian W | Ultraviolet laser ablative patterning of microstructures in semiconductors |
| TW525240B (en) * | 2001-01-31 | 2003-03-21 | Electro Scient Ind Inc | Ultraviolet laser ablative patterning of microstructures in semiconductors |
| WO2003002289A1 (en) * | 2001-06-28 | 2003-01-09 | Electro Scientific Industries, Inc. | Multistep laser processing of wafers supporting surface device layers |
| US6667457B1 (en) | 2002-09-17 | 2003-12-23 | Hitachi Global Storage Technologies | System and method for a sacrificial anode in a kerf for corrosion protection during slider fabrication |
| US6916227B2 (en) * | 2002-11-04 | 2005-07-12 | Sae Magnetics (H.K.) Ltd. | Method and apparatus for processing sliders for use in disk drives and the like |
| CN100476951C (en) | 2003-05-12 | 2009-04-08 | 新科实业有限公司 | System and method for edge blending hard disk drive head sliders |
| US20060027542A1 (en) * | 2004-04-28 | 2006-02-09 | Niraj Mahadev | Method to eliminate defects on the periphery of a slider due to conventional machining processes |
| US6960117B1 (en) | 2004-04-28 | 2005-11-01 | Sae Magnetics (H.K.) Ltd. | Method to eliminate defects on the periphery of a slider due to conventional machining processes |
| US8198566B2 (en) * | 2006-05-24 | 2012-06-12 | Electro Scientific Industries, Inc. | Laser processing of workpieces containing low-k dielectric material |
| US20080029152A1 (en) * | 2006-08-04 | 2008-02-07 | Erel Milshtein | Laser scribing apparatus, systems, and methods |
| US20100081255A1 (en) * | 2008-09-29 | 2010-04-01 | Erasenthiran Poonjolai | Methods for reducing defects through selective laser scribing |
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| US20020149136A1 (en) | 2000-09-20 | 2002-10-17 | Baird Brian W. | Ultraviolet laser ablative patterning of microstructures in semiconductors |
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- 2000-01-31 US US09/494,789 patent/US6255621B1/en not_active Ceased
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- 2002-12-26 US US10/330,975 patent/USRE39001E1/en not_active Expired - Lifetime
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