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WO1991007010A3 - Amplificateur optique - Google Patents

Amplificateur optique Download PDF

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Publication number
WO1991007010A3
WO1991007010A3 PCT/US1990/006074 US9006074W WO9107010A3 WO 1991007010 A3 WO1991007010 A3 WO 1991007010A3 US 9006074 W US9006074 W US 9006074W WO 9107010 A3 WO9107010 A3 WO 9107010A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
waveguide
section
along
gain section
Prior art date
Application number
PCT/US1990/006074
Other languages
English (en)
Other versions
WO1991007010A2 (fr
Inventor
Nils William Carlson
Gary Alan Evans
Jacob Meyer Hammer
Michael Ettenberg
Original Assignee
Sarnoff David Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarnoff David Res Center filed Critical Sarnoff David Res Center
Publication of WO1991007010A2 publication Critical patent/WO1991007010A2/fr
Publication of WO1991007010A3 publication Critical patent/WO1991007010A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

Un amplificateur optique (10) comprend un substrat (18) en matériau semiconducteur ayant une paire de surfaces opposées (20 et 22) et un corps en matériau semiconducteur (24) sur l'une des surfaces. Le corps comprend une paire de couches de revêtement (26 et 28) ayant des types de conductivité opposés et une région de puits quantique intermédiaire (30) entre les deux couches. Les couches de revêtement (26 et 28) et la région de puits quantique (30) forment un guide d'ondes (24) qui s'étend le long du corps. Une section de gain (12) se trouve dans le corps le long du guide d'ondes (240. La section de gain (12) est adaptée pour générer de la lumière dans la région active lorsqu'une tension y est appliquée. La section d'entrée de lumière (14) est adaptée pour diriger la lumière dans le corps et le long du guide d'ondes (24). Une section de sortie de lumière (16) ayant un réseau (42) s'étendant en travers du corps se trouve à l'autre extrémité de la section de gain (12). Les périodes des réseaux (42) sont telles qu'il ne se produit aucune auto-oscillation de lumière dans le guide d'ondes.
PCT/US1990/006074 1989-10-30 1990-10-26 Amplificateur optique WO1991007010A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/428,695 US5019787A (en) 1989-10-30 1989-10-30 Optical amplifier
US428,695 1989-10-30

Publications (2)

Publication Number Publication Date
WO1991007010A2 WO1991007010A2 (fr) 1991-05-16
WO1991007010A3 true WO1991007010A3 (fr) 1991-06-27

Family

ID=23699994

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1990/006074 WO1991007010A2 (fr) 1989-10-30 1990-10-26 Amplificateur optique

Country Status (2)

Country Link
US (1) US5019787A (fr)
WO (1) WO1991007010A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2873856B2 (ja) * 1990-04-03 1999-03-24 キヤノン株式会社 光増幅器
JP2539089B2 (ja) * 1990-09-28 1996-10-02 株式会社東芝 半導体レ―ザ増幅器および半導体レ―ザ増幅装置
JP3067880B2 (ja) * 1991-01-12 2000-07-24 キヤノン株式会社 回折格子を有する光検出装置
US5175643A (en) * 1991-09-30 1992-12-29 Xerox Corporation Monolithic integrated master oscillator power amplifier
US5282080A (en) * 1991-12-09 1994-01-25 Sdl, Inc. Surface coupled optical amplifier
JP2830591B2 (ja) * 1992-03-12 1998-12-02 日本電気株式会社 半導体光機能素子
JP3155837B2 (ja) * 1992-09-14 2001-04-16 株式会社東芝 光伝送装置
US5559822A (en) * 1995-06-07 1996-09-24 The Regents Of The University Of Colorado Silicon quantum dot laser
US5703896A (en) * 1995-06-07 1997-12-30 The Regents Of The University Of Colorado Silicon quantum dot laser
FR2738068B1 (fr) * 1995-08-24 1997-09-19 Alcatel Nv Amplificateur optique a faible diaphonie et composant incluant cet amplificateur
WO2002078143A1 (fr) * 2001-03-22 2002-10-03 Infinite Photonics, Inc. Couplage laser-fibre
US7194016B2 (en) 2002-03-22 2007-03-20 The Research Foundation Of The University Of Central Florida Laser-to-fiber coupling
US20040114642A1 (en) * 2002-03-22 2004-06-17 Bullington Jeff A. Laser diode with output fiber feedback
US7489440B2 (en) 2006-10-19 2009-02-10 International Business Machines Corporation Optical spectral filtering and dispersion compensation using semiconductor optical amplifiers
US20110247691A1 (en) * 2008-10-24 2011-10-13 The Regents Of The University Of California Optical spectral concentrator, sensors and optical energy power systems
US9496684B2 (en) * 2009-12-22 2016-11-15 International Business Machines Corporation System to control an optical signal

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887876A (en) * 1972-10-03 1975-06-03 Siemens Ag Optical intermediate amplifier for a communication system
US4194162A (en) * 1977-04-06 1980-03-18 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
US4881236A (en) * 1988-04-22 1989-11-14 University Of New Mexico Wavelength-resonant surface-emitting semiconductor laser

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053033A (fr) * 1964-04-03
NL7707720A (nl) * 1977-07-12 1979-01-16 Philips Nv Halfgeleiderlaser of -versterker.
US4380074A (en) * 1979-10-01 1983-04-12 Walsh Peter J Integrated circuit laser and electro-optical amplifier
US4794346A (en) * 1984-11-21 1988-12-27 Bell Communications Research, Inc. Broadband semiconductor optical amplifier structure
GB8514051D0 (en) * 1985-06-04 1985-07-10 British Telecomm Opto-electronic devices
US4942366A (en) * 1989-03-21 1990-07-17 General Electric Company Amplifier device with coupled surface emitting grating

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887876A (en) * 1972-10-03 1975-06-03 Siemens Ag Optical intermediate amplifier for a communication system
US4194162A (en) * 1977-04-06 1980-03-18 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
US4881236A (en) * 1988-04-22 1989-11-14 University Of New Mexico Wavelength-resonant surface-emitting semiconductor laser

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EVANS ET AL.: "Two-dimensional coherent... surface emission", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 53, no. 23, June 1998 (1998-06-01), pages 2275 - 2277 *
HAMMER ET AL.: "Phase-locked operation... diode lasers", APPLIED PHYSICS LETTERS, vol. 50, no. 11, 16 March 1987 (1987-03-16), pages 659 - 661 *
Journal of Lightwave Technology, 09 September 1989, CARLSON et al., High Speed Switching... Diode Lasers, 12th Conference on Optical Fiber Communications. *

Also Published As

Publication number Publication date
US5019787A (en) 1991-05-28
WO1991007010A2 (fr) 1991-05-16

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