WO1992000925A1 - Glass compositions - Google Patents
Glass compositions Download PDFInfo
- Publication number
- WO1992000925A1 WO1992000925A1 PCT/GB1991/001124 GB9101124W WO9200925A1 WO 1992000925 A1 WO1992000925 A1 WO 1992000925A1 GB 9101124 W GB9101124 W GB 9101124W WO 9200925 A1 WO9200925 A1 WO 9200925A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- low melting
- glass composition
- glass
- composition
- melting point
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims abstract description 124
- 239000000203 mixture Substances 0.000 title claims abstract description 95
- 230000008018 melting Effects 0.000 claims abstract description 37
- 238000002844 melting Methods 0.000 claims abstract description 37
- 239000010949 copper Substances 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 229910052716 thallium Inorganic materials 0.000 claims abstract description 5
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- 229910052796 boron Inorganic materials 0.000 claims abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 3
- 239000000945 filler Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910000679 solder Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910000502 Li-aluminosilicate Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 239000006060 molten glass Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052845 zircon Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical group [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 4
- 239000007767 bonding agent Substances 0.000 claims 1
- -1 corderite Substances 0.000 claims 1
- 229910003069 TeO2 Inorganic materials 0.000 abstract 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000007792 addition Methods 0.000 description 6
- 229910052810 boron oxide Inorganic materials 0.000 description 6
- GNTDGMZSJNCJKK-UHFFFAOYSA-N Vanadium(V) oxide Inorganic materials O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000005394 sealing glass Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- YWMLORGQOFONNT-UHFFFAOYSA-N [3-(hydroxymethyl)phenyl]methanol Chemical group OCC1=CC=CC(CO)=C1 YWMLORGQOFONNT-UHFFFAOYSA-N 0.000 description 2
- 229910000413 arsenic oxide Inorganic materials 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229960002594 arsenic trioxide Drugs 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 1
- ZPPSOOVFTBGHBI-UHFFFAOYSA-N lead(2+);oxido(oxo)borane Chemical compound [Pb+2].[O-]B=O.[O-]B=O ZPPSOOVFTBGHBI-UHFFFAOYSA-N 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 229910052642 spodumene Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
- H01B3/085—Particles bound with glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
- H01B3/087—Chemical composition of glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/04—Particles; Flakes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Definitions
- the present invention relates to novel glass compositions and, in particular, to novel low temperature glasses which are useful as sealing glasses or solder glasses, and in electronic paste formulations.
- solder glass or "sealing glass” is a term which is used to describe glasses which form an adhesive bond between two glasses, or between a combination of glass, metal, or a ceramic material. It is well known in the art that commercially available solder glasses capable of sealing ceramic and electrical component parts, such as television tube and semiconductor devices, are practical in the 400° to 500°C range. These solder glasses are generally based upon the lead oxide-boron oxide binary system. The lead oxide-boron oxide eutectic comprises 13% by weight of boron oxide and 87% by weight of lead oxide and represents the most fluid glass in that binary system. It is the starting point from which most commercial solder glasses have been derived. Whilst these glasses, with the addition of certain fillers, have been very successful, there is a need in the art for a solder glass which will seal at temperatures below the lower limit of the range of use for the lead oxide-boron oxide based glasses.
- a second useful feature of these glasses is their high thermal expansion which can be modified to be comparable with high expansion materials including copper, silver and aluminium.
- a solder glass In order for a glass to qualify as a solder glass it has to meet certain physical criteria. These criteria will depend to a great extent upon the properties of the materials which the solder glass is to unite. Thus, in general, a solder glass should possess the following characteristics: i) a low viscosity in the melting phase; ii) a thermal expansion which will match the - thermal expansion of the workpiece; iii) a sealing temperature which is below the lowest annealing and strain points of the materials to which it is to be sealed, iv) good physical and chemical stability; and v) a good adhesion to the workpiece.
- W087/05006 describes a solder glass for low temperature applications which is based upon the addition of bismuth oxide, zinc oxide and phosphorus pentoxide to the lead oxide-vanadium oxide eutectic.
- US-A-3408212 describes the effect of adding large quantities of lead fluoride to lead oxide-vanadium oxide mixtures. A narrow glass forming region was found to exist in the centre of the lead oxide-lead fluoride-vanadium pentoxide ternary diagram, with improved glass life stability.
- US-A-3837866 describes the addition of arsenic oxides to both the lead oxide-vanadium pentoxide and caesium oxide-vanadium pentoxide eutectics to prevent early recrystallization. However, the addition of arsenic oxide tends to increase the viscosity of the resulting glasses.
- US-A-4186023 describes lead borate and lead zinc borate glasses containing from 0.1 to 10% by weight of cuprous oxide and a non-volatile metal fluoride, the mol ratio of cuprous oxide to the fluoride content of the metal fluoride being in the range of from 1:0.25 to 1:10.
- solder glass compositions some of which have dilatometric softening temperatures of below 350°C, which are capable of wetting and bonding to a wide range of glasses, metals and ceramics including typical electronic substrates such as alumina, metallised alumina and silicon, and which are not derived from the lead oxide-boron oxide eutectic or the lead oxide- vanadium pentoxide eutectic mixtures.
- the present invention provides a low melting glass composition which comprises in mole percent calculated on an oxide basis: i) from 50 to 95% of Te0 , or an appropriate amount of a precursor for Te0 2 , ii) from o.l to 20% of an oxide of copper, or an appropriate amount of a precursor therefor, iii) from 0.1 to 40% of one or more oxides of Mg, Ba, Ti, Nb, Ta, Mo, Ag, Zn, B, W, Tl, or an appropriate amount of a precursor for one or more of the chosen oxides, and iv) optionally up to 30% of one or more oxides of Pb, V, Li, Na, K, Rb, Cs, Ca, Sr, Zr, Hf, Si, Ge, Al, Ga, In, P, Sn, Sb, Bi, La or a rare earth metal, or an appropriate amount of a precursor for one or more of the chosen oxides, and the glass composition having a dilatometric softening temperature, Ts, typically of 380
- the low melting glass composition of the present invention thus contain Te ⁇ 2 as the major component in an amount of from 50-95 mol %, preferably 60 to 90 mol %, more preferably 65-85 mol %.
- the oxide as component (iii) is preferably selected from the following oxides: Ag 2 0, Mo0 3 , WO 3 and ZnO.
- the low melting glass composition of the present invention may be a three oxide system, the first oxide comprising Te0 2 , with the second and third oxides comprising components (ii) and (iii) as defined above.
- the second oxide, component (ii) will generally be present in an amount of at least 0.5 mol %, preferably 0.5 to 10 mol %, whilst the third oxide, component (iii) will generally be present in an amount of at least 1.0%, preferably from 10 to 25 mol %.
- the low melting glass composition may be a four or more component system, in which the additional components are as defined above for component (iv) .
- the preferred low melting glass compositions of the present invention have a dilatometric softening point, Ts, in the range of from 210 to 380°C, preferably 350°C or below and more preferably 300°C or below and linear thermal coefficients of expansion in the range of from 150 to 245 X 10 ⁇ 7 , although the latter may on occasion be advantageously lowered by the use of a filler as described below.
- Ts dilatometric softening point
- a composition having a thermal coefficient of expansion of greater than 190 x 10" 7 is preferred for sealing to high expansion.
- the low melting glass compositions of the present invention may additionally contain at least one solid halide of low volatility, such as lithium or sodium fluoride, in an amount of ⁇ 5% by weight.
- a further and surprising attribute of many of the glasses of the present invention is their good water and chemical durability. It is the combination of this property with either or both the high expansion and low melting temperature that makes the glasses of this invention such good sealing/bonding materials.
- the various oxides used in the preparation of the compositions of the present invention are usually in the form of fine powders. Precursors of these oxides can also be useful, providing that they decompose to form the required oxides at a temperature below the melting temperature of the glass. Suitable precursors are the nitrites, nitrates, carbonates, metal organic salts, for example citrates, acetates, etc. and telluric acid.
- the invention also includes within its scope a mixture of the above-described glass compositions of the invention with from 1 to 50% by weight, based on the mixture, of an inert refractory filler material having a thermal coefficient of expansion below that of the glass composition. The filler should be insoluble or only slightly soluble in the glass composition.
- the filler material is preferably used in an amount of from 5 to 30% by weight, based on the mixture, but the amount will depend upon the thermal expansion of the substrate or parts which the composition is intended to join, and on the specific gravity of the materials, a larger amount of filler resulting in a greater decrease in the thermal coefficient of expansion of the composition.
- the filler materials are used in order to modify the thermal coefficient of expansion of the glass composition, without effecting significantly the bonding temperature, of the glass.
- the filler material may thus be added to the glass composition of the invention as a means of controlling the overall thermal expansion and contraction of the resulting solder glass mixture. Increased amounts of a low thermal expansion filler will correspondingly decrease the linear expansion of the glass composite.
- Suitable filler materials include amorphous Si0 2 , zircon, aluminium titanate, corderite, Nb 05, Ta 0s and lithium aluminium silicates e.g. ⁇ -spodumene.
- The,fillers are mixed with the glass composition in amounts in the range of from 1 to 50% by weight based on the mixture.
- the mixtures may be prepared, for example, by ball milling in a conventional manner to produce a finely divided, uniformly mixed material.
- the low melting glass compositions of the present invention may be applied to the substrate surfaces which are to be bonded together either as a molten glass, or as a shaped preform, or the powdered glass may be admixed with an organic vehicle to form a glass paste which is used to coat the substrate.
- the substrate is then heated initially to a temperature at which the organic vehicle will "burn off” and then at a temperature sufficient to melt the glass and form the seal.
- the composite is heated to a temperature in the range of from 300° to 450°C to melt the glass and form the bond.
- the organic vehicle may be any synthetic organic solvent which preferably boils or decomposes at a temperature below the softening point of the glass composition.
- the glasses of this invention may also successfully be employed in passivating, dielectric, resistor, conducting, die attach or similar electronic paste formulations in which the glass acts wholely or in part as the adhesive bond.
- the invention includes within its scope the use of a filler to modify mechanical properties such as thermal expansion. It is also intended to provide, where appropriate, for the use of fillers to modify electrical properties such as conductivity, resistivity and dielectric constant by the inclusion of; high and low resistivity metals, semiconducting oxides, nitrides, borides and carbides and dielectrics such as barium titanate or other insulating oxide materials.
- a metal flake or powder filler such as silver, gold, copper or aluminium may be admixed with the low melting glass composition of the present invention in an amount of from 25% to 95% by weight based on the total dry weight of the composition, preferably 60 to 95% by weight based on the total dry weight of the composition.
- the metal-glass mixture may be formulated into a paste by admixture with an organic vehicle.
- the organic vehicle will generally be used in an amount such that the total solids content of the metal-filled glass paste is in the range of from 70 to 90% solids.
- the metal-glass mixture is particularly suitable for electronic applications, such as "thick film" conducting pastes and die attach applications in bonding semiconductor devices to a ceramic substrate, such as alumina.
- solder glasses and pastes of the present invention may be coated onto metal-glass or ceramic substrates at any chosen thickness but usually at thicknesses in the range of from about 0.5 to 500 micrometres.
- the paste will generally be applied to the substrate surface in a conventional manner, for example by brush coating, screen printing, stencilling or stamping.
- the paste is typically syringe dispensed.
- the die is attached by placing it in the centre of the wet paste and setting it by the application of pressure so that the paste flows up the side of the die and leaves a thin film beneath the die.
- the structure is then heat treated to "burn off" the organic vehicle and the temperature then raised to melt the low melting glass composition.
- a range of three oxide tellurite based glasses were made of the composition Te0 2 :X:Y, investigating the tellurite rich glass region.
- the compositions which were made are given, in mol %, as points 1 to 6 on Figure 1 of the accompanying drawings which is a phase diagram of the compositions.
- the oxides X and Y which were incorporated into the tellurite glass systems were selected from the following:
- composition TXY1 85:7.5:7.5 mol %
- composition TXY2 • 80:15:5 mol %
- composition TXY4 70:25:5 mol %
- composition TXY6 ** 70:5:25 mol %
- compositions in the Te ⁇ 2 :Ag 0:CU2 ⁇ system were prepared, by fusing the respective oxide mixtures at a temperature of 775°c for 10 minutes in a recrystallized alumina crucible.
- the compositions, in mol %, are given in Table 2 below:
- Three five oxide tellurite glasses were prepared by adding both fourth and fifth oxides in amounts of 1 and 5 mol % to certain of the three oxide systems previously described. Glasses were prepared from mixtures of the five oxides by fusing at a temperature of 775°C for 10 minutes in a recrystallized alumina crucible. The abbreviations used were as described above, with the fourth and fifth oxide additions being represented by a letter indicating which oxide was added and the number 1 or 5 indicating whether it was added in an amount of 1 or 5 mol %. The results are given in Table 5 below: ble 5
- a five oxide tellurite based glass was made from the following components by fusing at a temperature of 775°C for 10 minutes in a recrystallised alumina crucible.
- tellurite glasses could have a use in hermetically sealing high expansion metal joins.
- Various tellurite glasses were selected to fuse to a selection of high expansion metals, these being 303 steel, aluminium, copper and nickel.
- the glass selected for bonding purposes had a slightly lower TCE value than that of the metal to be bonded so that the glass was put into compression on sealing.
- the glass was, in each case, ground to sub 38 micrometre particle size, suspended in heptane and spread thinly and evenly onto the flat metal surface.
- Another piece of metal was placed over the top of the glass to create a "sandwich" which was heated to 350° to 450°C to bond the two metal pieces together. A manual inspection indicated that a good bond had been obtained in each case.
- Table 7 The results are given in Table 7 below:
- Polycarbonates prepared from 2,5-dimethyl0,0'bis- (l-imidazolylcarbonyl)-2,5-hexanediol and the following diols a, b, c and d were designated as polymers A, B, C and D respectively:-
- polymers A, B and C were combined with a silver flake and a low melting glass powder of Example 17 to form a paste.
- the three pastes were applied to a number of substrate materials including alumina, black alumina and silicon wafer.
- the coated substrates were heated up to a temperature of 350°C.
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Abstract
A low melting glass composition comprises 50 to 95 mol % TeO2, 0.1 to 20 mol % of an oxide of copper, from 0.1 to 40 mol % of one or more oxides of Mg, Ba, Ti, Nb, Ta, Mo, W, Ag, Zn, B or Tl and optionally up to 30 % of one or more other oxides, the glass composition having a dilatometric softening temperature, Ts, typically of 380 °C or below.
Description
GLASS COMPOSITIONS
The present invention relates to novel glass compositions and, in particular, to novel low temperature glasses which are useful as sealing glasses or solder glasses, and in electronic paste formulations.
The term "solder glass" or "sealing glass" is a term which is used to describe glasses which form an adhesive bond between two glasses, or between a combination of glass, metal, or a ceramic material. It is well known in the art that commercially available solder glasses capable of sealing ceramic and electrical component parts, such as television tube and semiconductor devices, are practical in the 400° to 500°C range. These solder glasses are generally based upon the lead oxide-boron oxide binary system. The lead oxide-boron oxide eutectic comprises 13% by weight of boron oxide and 87% by weight of lead oxide and represents the most fluid glass in that binary system. It is the starting point from which most commercial solder glasses have been derived. Whilst these glasses, with the addition of certain fillers, have been very successful, there is a need in the art for a solder glass which will seal at temperatures below the lower limit of the range of use for the lead oxide-boron oxide based glasses.
This is typically in the region of 380°C for conventional lead oxide-boron oxide based glasses, although it may be less for such glasses containing thallium or fluorine. Thallium is highly toxic, whilst the reduced durability and ionic mobility encountered in fluorine containing glasses is not acceptable in many electronics applications.
A second useful feature of these glasses is their
high thermal expansion which can be modified to be comparable with high expansion materials including copper, silver and aluminium.
Until now no truly satisfactory solder/sealing glasses were available for use with such high expansion metals and alloys.
In order for a glass to qualify as a solder glass it has to meet certain physical criteria. These criteria will depend to a great extent upon the properties of the materials which the solder glass is to unite. Thus, in general, a solder glass should possess the following characteristics: i) a low viscosity in the melting phase; ii) a thermal expansion which will match the - thermal expansion of the workpiece; iii) a sealing temperature which is below the lowest annealing and strain points of the materials to which it is to be sealed, iv) good physical and chemical stability; and v) a good adhesion to the workpiece.
Various attempts have been made in the prior art to produce solder glasses which meet the above criteria and which will seal at temperature of the order of 300° to 350°C. Thus, W087/05006 describes a solder glass for low temperature applications which is based upon the addition of bismuth oxide, zinc oxide and phosphorus pentoxide to the lead oxide-vanadium oxide eutectic.
US-A-3408212 describes the effect of adding large quantities of lead fluoride to lead oxide-vanadium oxide mixtures. A narrow glass forming region was found to exist in the centre of the lead oxide-lead fluoride-vanadium pentoxide ternary diagram, with improved glass life stability. US-A-3837866 describes the addition of arsenic oxides to both the lead oxide-vanadium pentoxide and
caesium oxide-vanadium pentoxide eutectics to prevent early recrystallization. However, the addition of arsenic oxide tends to increase the viscosity of the resulting glasses. US-A-4186023 describes lead borate and lead zinc borate glasses containing from 0.1 to 10% by weight of cuprous oxide and a non-volatile metal fluoride, the mol ratio of cuprous oxide to the fluoride content of the metal fluoride being in the range of from 1:0.25 to 1:10.
We have now developed a series of solder glass compositions some of which have dilatometric softening temperatures of below 350°C, which are capable of wetting and bonding to a wide range of glasses, metals and ceramics including typical electronic substrates such as alumina, metallised alumina and silicon, and which are not derived from the lead oxide-boron oxide eutectic or the lead oxide- vanadium pentoxide eutectic mixtures. Accordingly, the present invention provides a low melting glass composition which comprises in mole percent calculated on an oxide basis: i) from 50 to 95% of Te0 , or an appropriate amount of a precursor for Te02, ii) from o.l to 20% of an oxide of copper, or an appropriate amount of a precursor therefor, iii) from 0.1 to 40% of one or more oxides of Mg, Ba, Ti, Nb, Ta, Mo, Ag, Zn, B, W, Tl, or an appropriate amount of a precursor for one or more of the chosen oxides, and iv) optionally up to 30% of one or more oxides of Pb, V, Li, Na, K, Rb, Cs, Ca, Sr, Zr, Hf, Si, Ge, Al, Ga, In, P, Sn, Sb, Bi, La or a rare earth metal, or an appropriate
amount of a precursor for one or more of the chosen oxides, and the glass composition having a dilatometric softening temperature, Ts, typically of 380°C or below.
The low melting glass composition of the present invention thus contain Teθ2 as the major component in an amount of from 50-95 mol %, preferably 60 to 90 mol %, more preferably 65-85 mol %. For electronic applications the oxide as component (iii) is preferably selected from the following oxides: Ag20, Mo03, WO3 and ZnO.
The low melting glass composition of the present invention may be a three oxide system, the first oxide comprising Te02, with the second and third oxides comprising components (ii) and (iii) as defined above. In such a system the second oxide, component (ii) , will generally be present in an amount of at least 0.5 mol %, preferably 0.5 to 10 mol %, whilst the third oxide, component (iii) will generally be present in an amount of at least 1.0%, preferably from 10 to 25 mol %.
The low melting glass composition may be a four or more component system, in which the additional components are as defined above for component (iv) . The preferred low melting glass compositions of the present invention have a dilatometric softening point, Ts, in the range of from 210 to 380°C, preferably 350°C or below and more preferably 300°C or below and linear thermal coefficients of expansion in the range of from 150 to 245 X 10~7, although the latter may on occasion be advantageously lowered by the use of a filler as described below. A composition having a thermal coefficient of expansion of greater than 190 x 10"7 is preferred for sealing to high expansion.
The low melting glass compositions of the present invention may additionally contain at least one solid halide of low volatility, such as lithium or sodium fluoride, in an amount of ≤ 5% by weight. A further and surprising attribute of many of the glasses of the present invention is their good water and chemical durability. It is the combination of this property with either or both the high expansion and low melting temperature that makes the glasses of this invention such good sealing/bonding materials.
The various oxides used in the preparation of the compositions of the present invention are usually in the form of fine powders. Precursors of these oxides can also be useful, providing that they decompose to form the required oxides at a temperature below the melting temperature of the glass. Suitable precursors are the nitrites, nitrates, carbonates, metal organic salts, for example citrates, acetates, etc. and telluric acid. The invention also includes within its scope a mixture of the above-described glass compositions of the invention with from 1 to 50% by weight, based on the mixture, of an inert refractory filler material having a thermal coefficient of expansion below that of the glass composition. The filler should be insoluble or only slightly soluble in the glass composition. The filler material is preferably used in an amount of from 5 to 30% by weight, based on the mixture, but the amount will depend upon the thermal expansion of the substrate or parts which the composition is intended to join, and on the specific gravity of the materials, a larger amount of filler resulting in a greater decrease in the thermal coefficient of expansion of the composition. The filler materials are used in order to modify the thermal coefficient of expansion of the glass
composition, without effecting significantly the bonding temperature, of the glass. The filler material may thus be added to the glass composition of the invention as a means of controlling the overall thermal expansion and contraction of the resulting solder glass mixture. Increased amounts of a low thermal expansion filler will correspondingly decrease the linear expansion of the glass composite. Suitable filler materials include amorphous Si02, zircon, aluminium titanate, corderite, Nb 05, Ta 0s and lithium aluminium silicates e.g. ^-spodumene.
It will be understood by those skilled in the art that mechanically strong adhesive bonds are formed when the thermal coefficients of expansion of the materials being sealed are closely matched and similar to that of the solder glass mixture. It will likewise be appreciated that close matching of the thermal expansion of the solder glass to the substrate to which it is to bond is critical to maintain minimal or zero stress in the seal or bond interface. This maintains the strength and integrity of the seal or bond under conditions of thermal cycling and thermal shock. The,fillers are mixed with the glass composition in amounts in the range of from 1 to 50% by weight based on the mixture. The mixtures may be prepared, for example, by ball milling in a conventional manner to produce a finely divided, uniformly mixed material. The low melting glass compositions of the present invention, optionally in admixture with a filler as described above, may be applied to the substrate surfaces which are to be bonded together either as a molten glass, or as a shaped preform, or the powdered glass may be admixed with an organic vehicle to form a glass paste which is used to coat the substrate.
The substrate is then heated initially to a temperature at which the organic vehicle will "burn off" and then at a temperature sufficient to melt the glass and form the seal. Generally, the composite is heated to a temperature in the range of from 300° to 450°C to melt the glass and form the bond. The organic vehicle may be any synthetic organic solvent which preferably boils or decomposes at a temperature below the softening point of the glass composition. In addition to their use as straightforward solder, sealing or bonding glasses, the glasses of this invention may also successfully be employed in passivating, dielectric, resistor, conducting, die attach or similar electronic paste formulations in which the glass acts wholely or in part as the adhesive bond.
As already described, the invention includes within its scope the use of a filler to modify mechanical properties such as thermal expansion. It is also intended to provide, where appropriate, for the use of fillers to modify electrical properties such as conductivity, resistivity and dielectric constant by the inclusion of; high and low resistivity metals, semiconducting oxides, nitrides, borides and carbides and dielectrics such as barium titanate or other insulating oxide materials.
A metal flake or powder filler, such as silver, gold, copper or aluminium may be admixed with the low melting glass composition of the present invention in an amount of from 25% to 95% by weight based on the total dry weight of the composition, preferably 60 to 95% by weight based on the total dry weight of the composition. The metal-glass mixture may be formulated into a paste by admixture with an organic vehicle. The organic vehicle will generally be used in an amount such that the total solids content of
the metal-filled glass paste is in the range of from 70 to 90% solids. The metal-glass mixture is particularly suitable for electronic applications, such as "thick film" conducting pastes and die attach applications in bonding semiconductor devices to a ceramic substrate, such as alumina.
The solder glasses and pastes of the present invention may be coated onto metal-glass or ceramic substrates at any chosen thickness but usually at thicknesses in the range of from about 0.5 to 500 micrometres. When the solder glass is used as a paste, either with or without a filler and either with or without a metal flake or powder incorporated therein, the paste will generally be applied to the substrate surface in a conventional manner, for example by brush coating, screen printing, stencilling or stamping. For die attach applications, the paste is typically syringe dispensed. The die is attached by placing it in the centre of the wet paste and setting it by the application of pressure so that the paste flows up the side of the die and leaves a thin film beneath the die. The structure is then heat treated to "burn off" the organic vehicle and the temperature then raised to melt the low melting glass composition.
The present invention will be further described with reference to the following non-limiting Examples.
Examples 1 to 19
A range of three oxide tellurite based glasses were made of the composition Te02:X:Y, investigating the tellurite rich glass region. The compositions which were made are given, in mol %, as points 1 to 6 on Figure 1 of the accompanying drawings which is a phase diagram of the
compositions. The oxides X and Y which were incorporated into the tellurite glass systems were selected from the following:
Ag20 = A ZnO = Z
M0O3 = M Cu 0 = C W03 = W
Glasses were prepared from mixtures of two of these oxides with Te0 (abbreviation T) in the following ratios:
Composition TXY1 = 85:7.5:7.5 mol %
Composition TXY2 =• 80:15:5 mol % Composition TXY3 - 80:5:15 mol %
Composition TXY4 = 70:25:5 mol %
Composition TXY5 - 70:15:15 mol %
Composition TXY6 =** 70:5:25 mol %
The mixtures were all fused at a temperature of 775°C for 10 minutes in a recrystallised alumina crucible. The glasses were then poured into graphite moulds maintained at room temperature to produce small bars. The bar was then cut to fit a dilatometer and measurements made of the softening temeperature, Ts, and the coefficient of thermal expansion, TCE. In some cases, exact cutting of the glass bar to fit the dilatometer was not possible as the glass bar shattered. The fragments allowed the measurement of Ts but not the measurement of TCE. Table 1 below gives the results. All of the glass compositions are denoted by the abbreviation of the oxides present, plus a number representing the molar compositions relating to Figure 1 and as defined above.
Examples 20 to 26
The following further compositions in the Teθ2:Ag 0:CU2θ system were prepared, by fusing the respective oxide mixtures at a temperature of 775°c for 10 minutes in a recrystallized alumina crucible. The compositions, in mol %, are given in Table 2 below:
The results for these compositions are given in Table 3 below:
Table 3
Example Ts TCE Number xlO"7
20 250 220
21 246 N/A
22 216 N/A 23 245 193
24 230 N/A
25 225 214
26 209 N/A
Examples 27 to 34
An investigation into four oxide tellurite based glasses was made by adding various fourth oxides in amounts of 1 or 5 mol % to various of certain of the three oxide glass systems previously described. Glasses were prepared from mixtures of the four oxides by fusing at a temperature of 775°C for 10 minutes in a recrystallized alumina crucible. The abbreviations used were as described above, with the symbol P representing PbO, with the fourth oxide addition being represented by a letter indicating which oxide was added and the number 1 or 5 indicating whether it was added in an amount of l or 5 mol %. The results are given in Table 4 below:
Table 4
Example Number
27
Examples 35 frp 3p
Three five oxide tellurite glasses were prepared by adding both fourth and fifth oxides in amounts of 1 and 5 mol % to certain of the three oxide systems previously described. Glasses were prepared from mixtures of the five oxides by fusing at a temperature of 775°C for 10 minutes in a recrystallized alumina crucible. The abbreviations used were as described above, with the fourth and fifth oxide additions being represented by a letter indicating which oxide was added and the number 1 or 5 indicating whether it was added in an amount of 1 or 5 mol %. The results are given in Table 5 below:
ble 5
A five oxide tellurite based glass was made from the following components by fusing at a temperature of 775°C for 10 minutes in a recrystallised alumina crucible.
Mol %
Some tests were carried out to show that tellurite glasses could have a use in hermetically sealing high expansion metal joins. Various tellurite glasses were selected to fuse to a selection of high expansion metals, these being 303 steel, aluminium, copper and nickel. The glass selected for bonding purposes had a slightly lower TCE value than that of the metal to be bonded so that the glass was put into
compression on sealing. The glass was, in each case, ground to sub 38 micrometre particle size, suspended in heptane and spread thinly and evenly onto the flat metal surface. Another piece of metal was placed over the top of the glass to create a "sandwich" which was heated to 350° to 450°C to bond the two metal pieces together. A manual inspection indicated that a good bond had been obtained in each case. The results are given in Table 7 below:
Polycarbonates prepared from 2,5-dimethyl0,0'bis- (l-imidazolylcarbonyl)-2,5-hexanediol and the following diols a, b, c and d were designated as polymers A, B, C and D respectively:-
Diol Polymer
a - 1,4-benzenedimethanol A b = 1,3-benzenedimethanol B c = 80% 1,4- and 20% 1,3- benzenedimethanol C d - 2-butyne-l,4-diol D
Using chloroform as a solvent, polymers A, B and C were combined with a silver flake and a low melting glass powder of Example 17 to form a paste.
The mixing ratio for each of the three pastes was as follows:-
Polymer and solvent 17 wt%
Glass Powder of Example 17 16 wt%
Silver Flake (Handy and Harman SF 235) 67 wt%
The three pastes were applied to a number of substrate materials including alumina, black alumina and silicon wafer. The coated substrates were heated up to a temperature of 350°C.
In all cases a successful bond was made by the silver paste to the substrate, forming a conductive film.
9mm square 'bare backed' silicon chips were also bonded successfully to gold coated and standard black alumina chip carriers using the three formulations given above.
Claims
1. A low melting glass composition which comprises in mole percent calculated on an oxide basis i) from 50 to 95% of Te02, or an appropriate amount of a precursor for Te02, ii) from 0.1 to 20% of an oxide of copper, or an appropriate amount of a precursor therefor, iii) from 0.1 to 40% of one or more oxides of Mg, Ba, Ti, Nb, Ta, Mo, Ag, Zn, B, W, Tl, or an appropriate amount of a precursor for one or more of the chosen oxides, and iv) optionally up to 30% of one or more oxides of Pb, V, Li, Na, K, Rb, Cs, Ca, Sr, Zr, Hf, Si, Ge, Al, Ga, In, P, Sn, Sb, Bi, La or a rare earth metal, or an appropriate amount of a precursor for one or more of the chosen oxides, and the glass composition having a dilatometric softening temperature, Ts, typically of 380°C or below.
2. A low melting glass composition as claimed in claim 1 wherein component (iii) is selected from: Ag 0, M0O3, WO3 and ZnO.
3. A low melting glass composition as claimed in claim 1 or claim 2 which is a mixture of three oxides wherein the third oxide, component (iii) , is present in an amount of at least 1.0 mole %.
4. A low melting glass composition as claimed in claim 1 or claim 2 which is a four oxide component glass.
5. A low melting glass composition as claimed in claim 1 or claim 2 which is a five oxide or more component glass.
6. A low melting point glass composition as claimed in any one of the preceding claims wherein component (i) is present in an amount of from 65 to 80 mol %.
7. A low melting point glass composition as claimed in any one of the preceding claims wherein component (ii) is present in an amount of from 0.5 to 10 mol %.
8. A low melting point glass composition as claimed in any one of the preceding claims wherein component (iii) is present in an amount of from 10 to 25 mol %.
9. A low melting point glass composition as claimed in any one of the preceding claims which has a dilatometric softening temperature, Ts of 350°C or below.
10. A low melting point glass composition as claimed in claim 6 which has a dilatometric softening temperature, Ts, of 300°C or below.
11. A low melting point glass composition as claimed in any one of the preceding claims which has a thermal coefficient of expansion of greater than 150 X 10-7.
12. A low melting point glass composition as claimed in claim 8 which has a thermal coefficient of expansion of greater than 190 X 10"7.
13. A low melting point glass composition as claimed in any one of the preceding claims which includes at least one halide of low volatility therein in an amount of ≤ 5% by weight.
14. A low melting glass composition as claimed in any one of the preceding claims which is admixed with from 1 to 50% by weight, based on the mixture, of one or more filler materials.
15. A low melting point glass composition as claimed in claim 14, wherein the filler is added to alter the electrical properties of the composition.
16. A low melting glass composition as claimed in claim 14 or claim 15 wherein the filler is zircon, aluminium titanate, corderite, Nb2C>5, a2C>5 or a lithium aluminium silicate.
17. A low melting glass composition as claimed in any one of claims 14 to 16 wherein the filler is incorporated into the mixture in an amount of from 5 to 30% by weight, based on the mixture, of the filler material.
18. A low melting glass composition as claimed in any one of the preceding claims in powder form which is admixed with an organic vehicle.
19. An electronic paste which includes therein a low melting glass composition as claimed in any one of the preceding claims and in which the glass acts wholly or in part as the bonding agent.
20. An electronic paste as claimed in claim 19 which is a passivating, dielectric, resistor, conducting or die attach electronic paste.
21. A metal-filled glass composition which comprises: a) from 25 to 95% by weight of a metal flake or powder filler, b) from 5 to 75% by weight of a low melting glass composition as claimed in any one of claims 1 to 13, the percentages being by weight based on the total weight of the composition.
22. A metal-filled composition as claimed in claim 21 which additionally includes an organic vehicle in an amount such that the metal-filled solder glass paste so formed has a solids content in the range of from 60 to 95% solids.
23. A metal-filled composition as claimed in claim 21 or claim 22 wherein the metal flake or powder filler is silver, gold, copper or aluminium.
24. An adhesive bond between a combination of a glass, metal or a ceramic which is formed by a low melting point glass composition as claimed in any one of claims 1 to 13.
25. A structure which includes therein at least one adhesive bond as claimed in claim 24.
26. A film or coating on a substrate which is formed from a low melting point glass composition as claimed in any one of claims 1 to 13.
27. A method of bonding two substrate surfaces which are the same or different and which are selected from glass, metal or ceramic materials, which method comprises using as the bond forming material a low melting point glass composition as claimed in any one of claims 1 to 13.
28. A method as claimed in claim 27 wherein the glass composition is applied to the surfaces to be bonded together as a molten glass, a shaped preform or as a powdered glass in admixture with an organic vehicle.
29. A method as claimed in claim 28 wherein the composite so formed is heated to a temperature in the range of from 300° to 450°C to melt the glass and form the bond.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9015072.3 | 1990-07-09 | ||
GB9015072A GB9015072D0 (en) | 1990-07-09 | 1990-07-09 | Glass composition |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1992000925A1 true WO1992000925A1 (en) | 1992-01-23 |
Family
ID=10678825
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1991/001123 WO1992000924A1 (en) | 1990-07-09 | 1991-07-09 | Tellurite glass compositions |
PCT/GB1991/001124 WO1992000925A1 (en) | 1990-07-09 | 1991-07-09 | Glass compositions |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1991/001123 WO1992000924A1 (en) | 1990-07-09 | 1991-07-09 | Tellurite glass compositions |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB9015072D0 (en) |
WO (2) | WO1992000924A1 (en) |
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DE10139904A1 (en) * | 2001-08-15 | 2003-02-27 | Univ Schiller Jena | Optical tellurite glasses for fiber optic amplifiers and oscillators and processes for their manufacture |
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