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WO1992001081A1 - Procede et appareil de depot de films homogenes par metallisation au vide simultanee et metallisation au vide croisee - Google Patents

Procede et appareil de depot de films homogenes par metallisation au vide simultanee et metallisation au vide croisee Download PDF

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Publication number
WO1992001081A1
WO1992001081A1 PCT/US1991/004738 US9104738W WO9201081A1 WO 1992001081 A1 WO1992001081 A1 WO 1992001081A1 US 9104738 W US9104738 W US 9104738W WO 9201081 A1 WO9201081 A1 WO 9201081A1
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WIPO (PCT)
Prior art keywords
target
sputtering
substrate
targets
sputtered
Prior art date
Application number
PCT/US1991/004738
Other languages
English (en)
Inventor
Abraham. I. Belkind
Daniel B. Dow
John T. Felts
Ronald E. Laird
Steven C. Schulz
Milan R. Kirs
Original Assignee
The Boc Group, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by The Boc Group, Inc. filed Critical The Boc Group, Inc.
Publication of WO1992001081A1 publication Critical patent/WO1992001081A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Definitions

  • This invention relates generally to sputtering and more particularly to an apparatus and method for depositing on substrates homogeneous films of two or more different materials.
  • Sputtering is the physical ejection of material from a target as a result of ion bombardment of the target.
  • the ions are usually created by collisions between gas atoms and electrons in a glow discharge.
  • the ions are accelerated into the target cathode by an electric field.
  • a substrate is placed in a suitable location so that it intercepts a portion of the ejected target atoms. Thus, a coating is deposited on the surface of the substrate.
  • Sputter deposition of thin films may be carried out in a variety of systems that differ in sputtering configuration, geometry, vacuum system, target type and size, substrate position, temperature, and so forth. Ion beam, diode, and magnetron systems are examples of sputtering techniques.
  • magnetron systems With magnetron systems, high sputtering rates can be achieved and high quality coatings can be produced.
  • a magnetron cathode a magnetic field is used to confine the glow discharge plasma and to increase the path length of the electrons moving under the influence of the electric field. This results in an increase in the gas-atom electron collision probability. This in turn leads to a much higher sputtering rate than obtained without the use of magnetic confinement. Further, such a sputtering,process can be accomplished at a much lower gas pressure.
  • the glow discharge plasma is confined by a magnetic structure to an annular region which is parallel to the surface of the flat target plate.
  • the magnetic confinement of the plasma results in a high rate of erosion in an annular region on the surface of the target.
  • a substrate can be rapidly covered with a metallic coating by using a direct current ("DC") potential to sputter a target plate of the desired metal in a chamber containing an inert gas.
  • DC direct current
  • planar magnetrons severe arcing problems are encountered when planar magnetrons are used in reactive sputtering to form certain metal-oxide and other high dielectric coatings. The arcing is due to the formation of a thick dielectric layer on the target surface.
  • a cathode target assembly in the form of an elongated, cylindrical tube carries a layer of material applied to its outer surface that is to be sputtered.
  • the target tube is rotated about its longitudinal axis.
  • a magnetic structure is arranged inside the tube, but does not rotate with it. It is believed that cylindrical magnetrons can reactively sputter dielectric materials because when the target surface is rotated through the stationary plasma, the top layer of material covering substantially its entire surface is sputtered as that surface is rotated through the magnetic field.
  • Any dielectric that is deposited on a portion of the target surface as it rotates outside the region of the magnetic field is removed by sputtering when it again passes through the field. Layers of dielectric do not form, thereby reducing arcing. This phenomenon may be referred to as a "self-cleaning" characteristic of the rotating cylindrical magnetron.
  • a description of the method employing a rotating cylindrical magnetron for coating substrates with dielectric materials such as silicon dioxide and silicon nitride is found in co-pending application Serial No. 07/433,690, filing date November 8, 1989, by inventors Wolfe et al., of common assignee, incorporated herein by reference. It is possible with reactive sputtering to prepare a wide range of films having different applications.
  • films containing mixtures of Zr0 2 and A1 2 0 3 were produced by sputtering composite targets of zirconium and aluminum and reacting the metal vapor with oxygen.
  • Gilmore, C. M. and Quinn, C. "Stabilization of Tetragonal Zr0 2 with A1 2 0 3 in Reactive Magnetron Sputtered Thin Films", J. Vac. Sci.
  • a graded film is characterized by having a graded (non- uniform) refractive index.
  • Hanak, J. J. "Co-Sputtering — Its Limitations and Possibilities", Le vide. No. 175, 1975, 11-18.
  • a graded composition is useful for creating very thin interfaces, but optically a graded refractive index is acceptable only for making thick Rugate filters; it is not useful in the manufacture of low-emissivity, solar control, or wide-band, antireflection optical films.
  • co-sputtering is accomplished by each of two rotating cylindrical targets directing a portion of their sputtered material onto the other target so that each sputters a combination of the two materials onto to form the substrate film.
  • the concept of using a rotating cylindrical magnetron in reactive sputtering to deposit films of a high dielectric constant, such as silicon dioxide, is generally known. What is surprising is that deposition of homogeneous films comprising different materials can be accomplished by employing dual cylindrical magnetrons in reactive co-sputtering wherein the magnetic structures in each cathode are aligned to cause target cross-contamination.
  • cross-sputtering is accomplished by utilizing one magnetron to sputter its target material onto one or more different material targets of another magnetron without directly forming the film on the substrate.
  • one magnetron having a target of one material is oriented to cross-contaminate another magnetron having at least one rotating cylindrical target of another material, whereas the magnetic structures in the second magnetron are normal to the substrate.
  • the first magnetron deposits a film onto the target(s) of the second magnetron and avoids directly depositing its material onto the substrate.
  • the material of both magnetrons is then sputtered off the target(s) of the second magnetron and onto the substrate to form a homogeneous film from both of the different target materials.
  • Figure 1 is a schematic representation of a dual rotating cylindrical magnetron sputtering system for depositing homogeneous films according to the present invention
  • Figure 2 is a cross-sectional view of dual cathode assemblies of a first co-sputtering magnetron embodiment wherein their magnetic assemblies are tilted toward each other;
  • Figure 3 is a schematic representation of film deposited on a dynamic substrate using dual cathode wherein the magnetic structures are not tilted;
  • Figure 4 is a graph comparing the refractive index of films as a function of the films• position vis ⁇ a-vis dual cathode assemblies
  • Figure 5 is a graph of the atomic ratio (%) of tin to tin and zinc of films as a function of the films ⁇ position vis-a-vis dual cathode assemblies
  • Figure 6 is an Auger profile of an Al 2 0 3 /Si0 2 film co-sputtered from a dual rotating cylindrical magnetron wherein the magnetic structures are tilted at
  • Figure 7 is an Auger profile of an Al 2 0 3 /Si0 2 film co-sputtered wherein the magnetic structures are at 25° ;
  • Figure 8 is a cross-sectional view of dual cathode assemblies of a second co-sputtering magnetron embodiment that includes a control system;
  • Figures 9A and 9B are curves that illustrate the operation of the magnetron of Figure 8.
  • Figure 10 is a flow diagram that sets forth a process of adjusting the control system of the magnetron of Figure 8;
  • Figure 11 is a graph of the atomic ratio (%) of zirconium to zirconium and titanium in a film as a function of position across a deposition zone for different directions of rotation of dual targets;
  • Figure 12 is a graph of the atomic ratio (%) of tin to tin and zinc in a film as a function of position across a deposition zone for two different speeds of rotation of dual targets;
  • Figure 13 is a cross-sectional view of a dual rotating cylindrical target magnetron in a first cross- sputtering embodiment
  • Figure 14 is an alternate cross-sputtering magnetron sputtering embodiment, shown in cross-section;
  • Figure 15 shows a modification of the magnetron of Figure 14.
  • a plasma is formed in an enclosed reaction chamber 10, in which a vacuum is maintained, where a substrate, such as substrate 12, is placed for depositing a thin film of material upon it.
  • the substrate 12 can be any vacuum compatible material, such as metal, glass, and some plastics.
  • the substrate can be stationary or moving.
  • the film can also be deposited over other films or coatings that have previously been formed on a substrate surface.
  • Each of the cathode assemblies 14 and 114 comprises generally an elongated cylindrical tube 16 mounted in the reaction chamber 10.
  • An elongated magnet assembly 18 is carried within a lower portion of the tube 16, extends substantially its entire length, and is restrained against rotation with it.
  • the cathode assemblies are substantially parallel to each other.
  • the tube 16 is preferably cooled by passing water or another heat transfer fluid through it.
  • the tube 16 is formed of a suitable non- magnetic material such as, for example, brass or stainless steel, and is of a diameter, wall thickness and length required for a particular operation to be performed.
  • a layer of selected material 120 is applied to the outer surface of tube 16 of cathode assembly 114.
  • the selected materials 20 and 120 are different in the co-sputtering process.
  • the tube 16 in each cathode assembly is supported in a manner to be rotated about its longitudinal axis by a target drive system 22. The orientation of the longitudinal axis depends upon the shape and position of the substrate that is being coated.
  • the substrate 12 is held horizontally and is flat, and the longitudinal axis of the tube 16 is also horizontal, thus being parallel with the substrate surface to be coated.
  • the tube 16 is rotatably held at each end in a horizontal position.
  • a support structure at one end also allows cooling fluid to be introduced into the tube 16 and withdrawn from it, and contains a mechanism for driving the tube 16 from a motor source outside of the vacuum chamber 10. Rotating seals are included in this support structure for isolating the cooling fluid from the vacuum chamber.
  • a support structure at an opposite end includes an electrical brush assembly for connecting the tube to a negative voltage.
  • the magnetic assembly 18 in each cathode assembly comprises an array of magnetic poles arranged in straight parallel rows along the length of the tube 16. Each row has three alternating magnetic poles 24, 26 and 28. In one configuration, the poles 24, 26 and 28 are arranged to have respective north, south and north polarities. An opposite configuration of respective south, north and south polarities may also be used. In either case, the magnetic poles 24, 26 and 28 are positioned in relation to the tube 16 so that their lines of force run from one pole, through the tube 16, and back through the tube in a curved path to an adjacent pole having an opposite polarity. This arrangement generates what is called a magnetic tunnel, which not only allows the sputtering rate to be increased, but also causes the target materials 20 and 120 to be removed faster inside the tunnel, especially in the middle of this magnetic pattern.
  • FIG. 1 shows a cross- section view of the dual cathode assemblies.
  • the angles at which the magnetic structures are rotated are designated as ⁇ - and ⁇ z , respectively.
  • ⁇ and ⁇ z need not be identical, and indeed, as described herein, depending on the sputtered materials, in some preferred embodiments the angles are different. Each of these angles can range from zero degrees to ninety degrees, depending upon various other parameters, non-zero angles often lying in a range of from 25-50 degrees.
  • the target surfaces 14 and 114 each usually include a single sputterable element different from the other, the following elements typically employed, for example, in glass coating: aluminum, indium, nickel, silicon, tantalum, tin, titanium, zinc, boron, tungsten, niobium, hafnium, magnesium, silver, ruthenium, vanadium chromium, molybdenum, bismuth and zirconium.
  • the target surfaces 14 and 114 generally contain minor amounts of other elements to provide structural integrity, promote sputtering, and for other similar purposes.
  • the last flux 162 is from the second target and results in the third layer 168.
  • the first layer 166 has a graded composition starting from the almost pure first target material to the composition of the second layer 160.
  • the composi ⁇ tion of the second layer 160 can be changed by varying the cathode potentials.
  • the composition of the second layer was non-homogeneous.
  • the magnetic structures in each of the magnetrons can be oriented relative to one another such that the magnets thereof are at an acute angle and direct the sputtered material downwardly and inwardly to focus it upon the substrates that are located therebeneath. Due to this magnetic arrangement, the material sputtered from the two targets is focused onto a relative small area of the substrate, thereby improving the deposition rate. McKelvey, "Magnetron Cathode Sputtering Apparatus", U.S. Patent 4,466,877.
  • surprisingly homogeneous films comprising Sn0 2 and ZnO were produced in asymmetrical sputtering, that is, where the angles of the magnetic structures in the dual cylindrical magnetrons are different.
  • 0, and ⁇ 2 are set at 0 ⁇ and 90°, respectively.
  • target 14 is cross-contaminated by material sputtered from target 114; and the substrate, in turn, is deposited with materials sputtered from target 14.
  • Figure 2 is a "W" configuration of three elongated magnets 24, 26 and 28.
  • An alternative is a "U” configuration wherein a single magnet is position in the middle and a "U” shaped piece of magnetic material is positioned to form poles on either side of the magnet and of opposite polarity. In either case, it is usually desirable to position the pole faces as close to an inner surface of the tube 16 as possible.
  • the magnetic assembly 18 is preferably supported within the tube 16 from a stationary axial rod or cooling fluid tube.
  • a cathode potential, V, sufficient to cause sputtering to occur is supplied to the tubular targets 16 in each cathode assembly from DC power sources 30 and 230 through a power lines 32 and 232 having sliding contacts 34 and 234 with the tubes 16 by a conventional electrical brush.
  • the enclqsure of the reaction chamber 10 is conductive and electrically grounded. It can serve as an anode in the sputtering process.
  • a separate anode may be optionally employed and maintained at a small positive voltage.
  • Such an anode is positioned for example above the target tubes and is preferably water cooled in order that high power levels may be employed.
  • the reaction chamber 10 is provided with an outlet tube 36 communicating with a vacuum pump 38.
  • a gas supply system provides the chamber 10 with the gases necessary for the coating operation.
  • a first gas supply tube 40 extends into the coating chamber 10 and from a source 42 of an inert gas.
  • the inert gas is preferably argon for the specific, methods being described.
  • Nozzles 44 connected to inlet tube 40 distribute the inert gas in a region above the rotating cathodes. It is the inert gas that breaks down into electrically charged ions under the influence of an electric field established between the target surfaces 20 and the grounded chamber enclosure or separate floating anode. The positive ions are attracted to and bombard the target surfaces 20 and 120, under the influence of the electric field.
  • a second gas supply tube 46 extends through the coating chamber 10 from a reactive gas source 48. Nozzles 50 connected to inlet tube 46 distribute the reactant gas close to and across the width of the substrate 12 being coated. Molecules of the reactive gas combine with molecules sputtered from the target surfaces, as a result of ion bombardment, to form the desired molecules that are deposited on the top surface of the substrate 12.
  • the inert and reactive gases from the sources 42 and 48 can be combined and delivered into the chamber 10 through a common tube and set of nozzles.
  • the delivery tube is preferably positioned along a side of the rotating target tubes 16 and parallel with its longitudinal axis. Two such tubes can be used, one on each side of the target tubes 16 and parallel with its longitudinal axis, each delivering the same combination of inert and reactive gases. Also, more than one reactive gas can be simultaneously supplied, depending upon the film being deposited.
  • Reactive sputtering individual films of Al 2 0 3 and Ti ⁇ 2 , and symmetrically reactive co-sputtering of the same were conducted using the above-described dual cathode assemblies wherein t and 0 2 were fixed at 30°. A1 2 0 3 and Ti0 2 were sputtered at 3 kW and 6 kW, respectfully. Targets of cathode assemblies 14 and 114 were titanium and aluminum, respectively. When sputtering only Ti0 2 , the potential of cathode 114 (Al) was zero and conversely when sputtering only A1 2 0 3 , the potential of cathode 14 (Ti) was zero. The substrates were static; that is, not moved once set in place.
  • Table 1 sets for the process data for production of the films.
  • the potentials refer to the potential between the respective cathode assembly tube and the ground.
  • the power refers to the power supplied.
  • the current was measured at the power source.
  • the flow rates of the inert gas and reactive gas were measured in standard cubic centimeters per minute (SCCM) .
  • SCCM standard cubic centimeters per minute
  • the pressure of the reaction chamber is measured in microns.
  • the first value refers to cathode 14 (Al) and the second refers to cathode 114 (Ti).
  • Figure 4 is a graph of the refractive index of each film as a function of t e film's position vis-a-vis the two cathode assemblies.
  • positions 5.0 and 20.0 designate substrate positions directly below the cathode assemblies 14 (Al) and 114 (Ti) , respectively, and 12.5 cm designates the point on the substrate midway in between.
  • the refractive index of the A1 2 0 3 (curve 310) is 1.65 whereas directly under the titanium target the refractive index of Ti0 2 (curve 320) is 2.4-2.5.
  • the refractive index decreased to only 1.55 and 2.0-2.2 for A1 2 0 3 and Ti0 2 , respectively.
  • the refractive indices of the co-sputtered Al 2 0 3 /Ti0 2 film changed only slightly with substrate position along the center line, which indicates that the variation in composition of the Al 2 0 3 /Ti0 2 film was not significant.
  • the first value refers to cathode 14 (S ⁇ ) and the second refers to cathode 114 (Zn).
  • Figure 5 is a graph of the atomic ratio (%) of tin to tin and zinc on the films as a function of the film's position vis-a-vis the cathodes.
  • 0 1 and 0 2 were both fixed at 30°, with power to the tin and zinc targets set at 0.4 kW and 0.7 kW, respectively.
  • curve 170 the tin concentration in the symmetric co-sputtered films, deposited along the center line, varied for more than 10%. However, by increasing cross-contamination of the zinc target, this variation was reduced significantly.
  • a coating process In industrial applications, it is not uncommon for a coating process to be a continuous one where substrates are coated as they move across the target assembly. With the present invention, film homogeneity is maintained even when co-sputtering on dynamic substrates.
  • Reactive Symmetric Co-Sputtering of A1 2 0 3 and SiQ 2 at 15° and 25° on a Dynamic Substrate Using the dual cathode magnetron described above, reactive symmetric co-sputtering of Al 2 0 3 and Si0 2 was conducted on dynamic substrates. Two magnetic structure angles, 15° and 25°, were chosen. Table 3 sets forth the operating conditions of the co- sputtering.
  • the first value refers to cathode 14 (Al) and the second refers to cathode 114 (Si).
  • FIG. 6 is an Auger profile of the Al 2 0 3 /Si0 2 film co- sputtered at 15°.
  • the profile shows that the amount of oxygen (curve 180) in successive layers of the film remains relatively constant throughout the co-sputtering process.
  • the amount of aluminum (curve 182) varies significantly, with the concentration following a sinusoidal-like pattern beginning from a relatively high concentration.
  • the amount of silicon (curve 184) in the layers of the film varied and also followed a sinusoidal pattern. However, in contrast to aluminum, the silicon pattern began at a relatively low amount.
  • the Auger analysis detected a slight amount of carbon (curve 186) contamination in the film.
  • the Auger profile indicates that symmetric co- sputtering of Al 2 0 3 and Si0 2 at magnetic angles of 15° on a dynamic substrate produces a film with a non- homogeneous composition.
  • the profiles of aluminum and silicon confirm that A1 2 0 3 and Si0 2 are deposited at different rates depending upon the substrate's position relative to the aluminum and silicon targets.
  • the Auger profile as shown in Figure 7 shows that aluminum (curve 190) and silicon (curve 192) are deposited at relatively constant rates when co-sputtering takes place at 25°.
  • Curves 194 and 196 refer to the oxygen and carbon contents of the film, respectively. It is believed that when co- sputtering at 25°, there is sufficient cross- contamination of the targets so that the flux of aluminum and silicon from each target is substantially the same. Thus, the film deposited is homogeneous.
  • FIG 8 A generalized version of the co-sputtering system of Figures 1 and 2 is given in Figure 8, wherein several of the parameters of operation of the sputtering apparatus are individually controllable.
  • the rotatable position of the magnets, the power applied to each target and the speed of rotation of each target are cooperatively adjustable in order to obtain a film deposited on a substrate that contains a desired homogeneous mixture of compositions formed from each of the targets.
  • adjacent rotating cylindrical magnetron target assemblies 201 and 203 include respective cylindrical targets 205 and 207 which rotate about their respective axes 209 and 211.
  • Provided at the outside of the targets 205 and 207 are different materials, denoted as Ml and M2, respectively, to be sputtered into a common substrate film.
  • the magnet assembly 217 includes pole faces 221, 223 and 225, and the magnetic assembly 219 contains pole faces 227, 229 and 231.
  • the magnetic assemblies 217 and 219 are rotatably positionable in order that respective axes 233 and 235 are set at desired angles Q and ⁇ 2 with respective vertical references 237 and 239.
  • the magnets confine the plasma of the outside of the respective targets to the define erosion zones inbetween adjacent magnetic poles where sputtering of target material is the greatest.
  • Such erosion zones or tracks 241 and 243 are indicated for the target assembly 201 and similar erosion zones 245 and 247 are indicated for the target assembly 203.
  • These sputtering tracks or erosion zones are held stationary while their cylindrical targets are rotated through them to deposit film on a substrate.
  • the circumferential positions of the erosion zones are repositionable by rotation of their respective magnetic assemblies with respect to their supporting coolant tubes.
  • the position of the erosion zones determines the direction at which the particles are sputtered from their respective targets, a desired balance being obtained between material being sputtered downward directly onto a moving substrate 249 and the amount sputtered across to the adjacent target surface.
  • Each of the cylindrical targets 205 and 207 is rotated by a motor source indicated schematically by drives 251 and 253, respectively.
  • the greatest flexibility in adjustment is provided if each of the targets is driven by a separately controllable motor source, but satisfactory results are also obtained when driven by a single variable motor source coupled to both of the cylindrical target assemblies by an appropriate system of gears.
  • the desired direction of rotation as indicated in Figure 8, is for the right-hand target to be rotated in a clockwise direction and the left-hand target to be rotated in a counterclockwise direction, for reasons stated hereinafter.
  • each of the magnetic assemblies 217 and 219 is made adjustable in rotational position by motor sources indicated schematically at 255 and 257. It is desirable that the angle of each of the stationary magnetic assemblies 217 and 219 be independently adjustable for the contemplated deposition processes.
  • Each of the targets 205 and 207 is also coupled to separately controllable power sources 259 and 261. The adjustable speed of rotation, power and magnetic rotatable position are determined and set by an appropriate electronic control system 263.
  • a detailed mechanical structure of a preferred rotating target assembly for use with large substrates, such as architectural glass, is given in copending application Serial No. ' 609,815, filed November 6, 1990, by Alex Boozenny et al.
  • Conduits 267 and 269 are also provided within the vacuum chamber in order to introduce an inert gas (such as argon) and/or a reactive gas (such as oxygen) in order to support the sputtering operation and react with the material sputtered off the targets.
  • Inert and reactive gases can be introduced through the same conduits, but it is generally preferred to introduce the reactive gas near the substrate and the inert gas near the target assemblies.
  • the high degree of adjustability is provided in the system of Figure 8 in order to be able to carefully control the relative compositions and homogeneity of a film being deposited on a substrate.
  • the given magnetron apparatus will have certain fixed parameters, such as dimensions of vacuum chamber, diameter of targets, magnetic pole spacing, distance between target and the substrate, distance between target assemblies, and the like. But within these and similar constraints of a given piece of apparatus, the independent adjustability of magnetic rotatable position, target power and target rotational speed allows the relative proportions of elements derived from each of the two targets to be adjusted in a manner to maintain homogeneity of the film being deposited.
  • Figures 9A and 9B provide exemplary curves intended to illustrate the effect of the three adjustments of the system of Figure 8.
  • a curve 271 illustrates generally a typical deposition rate from the target assembly 201 by itself, when totally isolated from the other target assembly 203.
  • the rate of deposition, and thus the thickness deposited upon a stationary substrate under it, is highest where the most material is being sputtered from the erosion zones 241 and 243.
  • a curve 273 indicates the rate of deposition across a stationary substrate from the target assemble 203 when operating by itself without any influence of the other target assembly 201.
  • the speed of rotation of the targets 251 and 253 has no effect. Nor does the direction of rotation of the cylindrical targets affect their individual film sputtering characteristics.
  • FIG. 9B shows an example deposition rate characteristic that is desired and achievable by properly making these adjustments.
  • Curves 275 and 277 show the relative deposition rate of materials Ml and M2 across the vacuum chamber between extreme positions A and B from materials of the targets 205 and 207, respectively. It is not necessary that the deposition rate of these two materials be the same across the deposition zone, but rather that they have the same relative proportion or ratio within a few percent.
  • the film then deposited on the substrate 249 as it passes between points A and B within the vacuum chamber has substantially the same composition at all levels, in contrast to the situation explained earlier with respect to Figure 3.
  • the effect of rotatably repositioning the magnet assemblies 217 and 219 in a co-sputtering system is to change the shape of their respective material deposition curves as well as shifting any peaks that exist. For example, if the magnetic assembly 217 of the target assembly 201 is rotated a few degrees counterclockwise, more material of the target 205 is sputtered off of it and onto the target 207, and then resputtered from the target 207. More of the material of the first target 205 is then deposited to the right- hand side of the chamber near the edge B. At the same time, the relative amount deposited near the edge A of the vacuum chamber is reduced.
  • the direction of rotation of the targets 205 and 207 affects the distribution of the deposition rate of their respective materials across the vacuum chamber.
  • the direction of rotation indicated in Figure 8 is generally preferred since it has been found to increase the deposition of the deficient materials at the tails of the distribution curves while reducing their peaks.
  • each of the targets affects the amount of material of the other target that is allowed to accumulate on its surface and thus the proportions of each material that is sputtered from it.
  • FIG 10 is a process flow chart which illustrates the steps of adjusting a magnetron of the type of Figure 8 prior to production film depositions being made.
  • a first step 279 is, of course, to know what is desired in the film. For example, a mixed tin oxide and zinc oxide film is deposited on the substrate 249 by one target 205 containing substantially pure tin and the other target 207 containing substantially pure zinc on their outside surfaces. Oxygen is then introduced into the chamber through conduits 267 and 269 as a reactive gas in order to form the oxides from each of these materials. A certain atomic ratio of the tin oxide to zinc oxide material in the film will be desired and specified.
  • a next step 281 is to adjust the values of the three parameters for each of the target assemblies, namely power, magnet position and rotation speed.
  • any difference in the sputtering rates of the tin and zinc material from their respective targets is taken into account. Adjustment of the power supplied to each target principally compensates for this difference, but the magnet angle also does so.
  • test films are deposited in a step 283. It is preferable that individual substrate pieces be positioned periodically across the deposition zone between edges A and B of the vacuum chamber. After deposition, the film is analyzed for homogeneity and composition by standard techniques. If the first setting of parameters results in the desired homogeneous film at all positions in the chamber, as determined in a step 285, then the system is adjusted for a production run. However, if the desired homogeneity is not present, the position and extent of the non-homogeneity is analyzed as part of a step 289 to readjust one or more of the three parameters for each of the target assemblies, and then test that setting again in the step 283. This is done as many times as is necessary in order to obtain the desired results.
  • a curve 291 shows the results of a deposition with the left hand target rotating clockwise and the right hand target rotating counterclockwise, opposite,to the directions indicated on Figure 8.
  • a curve 293, on the other hand shows the results of a deposition with the targets rotated in the directions shown on Figure 8. It can be seen that the choice of the rotation ⁇ direction discussed above with respect to Figure 8 considerably flattens out the element concentration curve.
  • a perfectly flat concentration curve is the goal for obtaining a homogenous film deposition on a substrate that is moved along this deposition path beneath the targets. Such a flat curve is practically obtained by also varying the other parameters discussed above with respect to Figures 8-10, the results of Figure 11 showing the effect of rotation direction alone.
  • a curve 295 shows the results by rotating tin and zinc targets at l r.p.m.
  • a curve 297 shows the results when the targets were both rotated at 8 r.p.m. All other parameters were held fixed during the two experiments leading to the results of Figure 12. It can be seen that the higher speed desirably flattens out the concentration ratio curve somewhat. Indeed, it appears that the targets of the experimental set-up should be rotated at 8 r.p.m. or more as an aid to reach the goal of depositing a homogeneous film.
  • the data shown in Figure 12 was obtained with the magnet angle ⁇ of the tin target at 30 degrees, and that of the zinc target at 45 degrees.
  • the DC power applied to the tin target was 600 watts, and that applied to the zinc target 500 watts.
  • the pressure in the deposition chamber was about 15 mTorr.
  • a first rotating cylindrical target assembly 301 of Figure 13 has a single material M3 in a target 303 and an internal magnet assembly 305 directed straight downward toward the path of a moving substrate 307.
  • a second target assembly 309 having a target 311 with a different single material M4 includes an internal magnet assembly 313 that is rotated 90° from the vertical to face directly against the first target assembly 301.
  • the arrangement is made such that material is not sputtered directly from the target 311 onto the substrate 307. Rather, it is first sputtered onto the target 303, and then the combination of the two target materials M3 and M4 is sputtered straight downward onto the substrate 307.
  • the configuration of Figure 13 maintains the target assembly 301 to sputter material directly downward to deposit the densest possible film onto the substrate below.
  • the advantages of co-sputtering are maintained, however, in that the two materials M3 and M4 of the targets 303 and 311 do not need to alloyed into a single target, as was heretofore the case, but rather can be maintained in separate targets.
  • a baffle or the like may be necessary in the embodiment of Figure 13 to prevent deposition of the material M4 onto the substrate directly from the target 311.
  • the relative proportions of the separate target materials M3 and M4 sputtered from the target 301 is controlled primarily by controlling the rate of deposition from the target 311 onto the target 303.
  • Target assemblies 315 and 317 are positioned side-by-side and contain the same material M5 on the outside surface of their targets.
  • the magnets internal of the cylindrical targets are directed straight downward to a substrate 319.
  • a third rotating cylindrical magnetron structure 321 is positioned above the other two and contains a different sputtering material M6 on the outside of its target from that on the target assemblies 315 and 317.
  • a magnetic assembly 323 has its magnetic poles arranged so that resulting erosion zones 3£5 and 327 are positioned opposite the targets of the assemblies 315 and 317.
  • the material M6 is thus sputtered off the target of the assembly 321 and onto each of the targets of the assemblies 315 and 317, to be resputtered therefrom along with material M5 on the lower-most targets.
  • two targets can be employed in place of the target 321, one sputtering material onto the bottom target 315 and the other onto the bottom target 317.
  • some form of baffling such as the baffle 329, may be desirable.
  • the configuration of Figure 14 operates by maintaining two plasmas.
  • the targets of the assemblies 315 and 317 form a first cathode and gases are introduced by conduits 316 and 317 to support its plasma.
  • the target of the assembly 321 forms a second cathode and gases introduced through conduits 322 and 324 support its plasma. It will be recognized that many alternative numbers and arrangements of targets are possible to implement the cross-sputtering improvements of the present invention.
  • a planar magnetron assembly 331 is utilized in place of the rotating cylindrical magnetron 321 of Figure 14. It has a planar 32 target surface 333 of material M6 and a magnetic assembly (not shown) configured to create a race track having erosion zones 337 and 339 facing respective rotating target assemblies 315 and 317 to cause particles sputtered therefrom to form a film on the cylindrical targets.
  • the erosion zones 337 and 339 are preferably aligned with the axis of rotation of the respective target assemblies 315 and 315 in the view shown, and extend substantially the entire length of the cylindrical targets in a direction perpendicular to the paper.
  • a plasma is supported around the planar target surface 333, forming a second cathode, by gasses introduced through conduits 341 and 343.

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  • Metallurgy (AREA)
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Abstract

Procédé et appareil destinés à déposer des films homogènes minces par métallisation au vide réactive à deux cibles, qui utilisent une paire de magnétrons cylindriques rotatifs entraînés par un potentiel électrique et possédant des matériaux de métallisation différents. Il en résulte une technique et un appareil qui déposent un film uniforme sur de grands substrats dynamiques ou statiques, avec des taux de déposition élevés. Un aspect de ladite métallisation au vide simultanée utilise l'orientation des structures magnétiques situées dans l'une ou les deux cibles de manière à permettre une contamination croisée des deux cibles entre elles. Dans un aspect de la métallisation au vide croisée, on utilise une ou plusieurs cibles cylindriques rotatives du même matériau sur lequel est déposé un matériau différent par métallisation au vide depuis une autre cible encore, une combinaison de deux matériaux étant déposée sur un substrat à partir de la cible cylindrique.
PCT/US1991/004738 1990-07-06 1991-07-03 Procede et appareil de depot de films homogenes par metallisation au vide simultanee et metallisation au vide croisee WO1992001081A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US671,360 1984-11-14
US54939290A 1990-07-06 1990-07-06
US549,392 1990-07-06
US67136091A 1991-03-19 1991-03-19

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EP0589699A1 (fr) * 1992-09-29 1994-03-30 The Boc Group, Inc. Dispositif et procédé de dépôt de films d'oxyde métallique
EP0701270A1 (fr) 1994-09-06 1996-03-13 The Boc Group, Inc. Méthodes et appareil de pulvérisation sans vide
US5563734A (en) * 1993-04-28 1996-10-08 The Boc Group, Inc. Durable low-emissivity solar control thin film coating
GB2303380A (en) * 1995-07-19 1997-02-19 Teer Coatings Ltd Improving the sputter deposition of metal-sulphur coatings
DE19610253A1 (de) * 1996-03-15 1997-10-09 Fraunhofer Ges Forschung Zerstäubungseinrichtung
WO2000028104A1 (fr) * 1998-11-06 2000-05-18 Scivac Appareil de pulverisation cathodique et procede associe de depot a vitesse elevee
WO2001040539A3 (fr) * 1999-12-03 2002-02-14 Univ California Procede et systeme concernant la distribution de flux et la formation de depot de films
US6423419B1 (en) 1995-07-19 2002-07-23 Teer Coatings Limited Molybdenum-sulphur coatings
US6488824B1 (en) 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
EP1333106A1 (fr) * 2002-02-01 2003-08-06 PX Techs S.A. Procédé et installation de dépot d'un revêtement noir sur un substrat
WO2006038407A3 (fr) * 2004-09-14 2006-06-22 Shinmaywa Ind Ltd Appareil de formation de films sous vide
WO2006076345A3 (fr) * 2005-01-13 2006-12-21 Cardinal Cg Co Chambres de pulverisation a maintenance reduite
WO2007038368A1 (fr) * 2005-09-23 2007-04-05 Bose Corporation Dispositif de pulverisation reactive a double magnetron avec alimentation en gaz synchronisee
EP1775353A1 (fr) * 2005-09-15 2007-04-18 Applied Materials GmbH & Co. KG Installation de revêtement et procédé d'opération d'une installation de revêtement
WO2009007448A3 (fr) * 2007-07-12 2009-03-19 Materia Nova Dispositif de co-pulvérisation à magnétron
WO2009022184A3 (fr) * 2007-08-15 2009-04-09 Gencoa Ltd Plasma de faible impédance
DE102008034960A1 (de) 2008-07-25 2010-01-28 Von Ardenne Anlagentechnik Gmbh Verfahren und Beschichtungskammer zur Beschichtung eines Substrats mit einer transparenten Metalloxid-Schicht
DE102009032152A1 (de) 2008-07-25 2010-04-15 Von Ardenne Anlagentechnik Gmbh Verfahren und Beschichtungskammer zur Beschichtung eines Substrats mit einer transparenten Metalloxid-Schicht
EP2216424A1 (fr) * 2009-02-06 2010-08-11 Centre Luxembourgeois de Recherches pour le Verre et la Céramique S.A. Techniques pour le dépôt de revêtements d'oxyde conducteurs transparents à l'aide d'appareils de pulvérisation C-MAG double
US20120067717A1 (en) * 2010-09-17 2012-03-22 Guardian Industries Corp. Method of co-sputtering alloys and compounds using a dual C-MAG cathode arrangement and corresponding apparatus
WO2011129882A3 (fr) * 2010-04-16 2012-04-19 Guardian Industries Corp. Procédé de fabrication d'article recouvert ayant un revêtement antibactérien et/ou antifongique et produit résultant
US8182662B2 (en) 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
DE102011085888A1 (de) * 2011-11-08 2013-05-08 Von Ardenne Anlagentechnik Gmbh Beschichtungsverfahren zum Sputtern von Mischschichten und Vorrichtung zum Ausführen des Verfahrens
DE102012203152A1 (de) * 2012-02-29 2013-08-29 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum reaktiven Magnetronsputtern einer transparenten Metalloxidschicht
US20130228452A1 (en) * 2010-11-17 2013-09-05 Soleras Advanced Coatings Bvba Soft sputtering magnetron system
WO2013178252A1 (fr) * 2012-05-29 2013-12-05 Applied Materials, Inc. Procédé permettant de recouvrir un substrat et dispositif d'enrobage
US8992742B2 (en) 2009-06-26 2015-03-31 Von Ardenne Anlagentechnik Gmbh Method for coating a substrate in a vacuum chamber having a rotating magnetron
US20150184285A1 (en) * 2013-12-30 2015-07-02 Samsung Display Co., Ltd. Sputtering apparatus and method thereof
EP2553137A4 (fr) * 2010-03-31 2015-10-21 Mustang Vacuum Systems Inc Dispositif à cathode de pulvérisation par magnétron tournant cylindrique et procédé de dépôt d'un matériau utilisant des émissions radiofréquences
WO2015158679A1 (fr) * 2014-04-18 2015-10-22 Soleras Advanced Coatings Bvba Système de pulvérisation pour pulvérisation uniforme
JP2016132807A (ja) * 2015-01-20 2016-07-25 株式会社アルバック スパッタリング装置、薄膜製造方法
JP2017128813A (ja) * 2009-10-02 2017-07-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板をコーティングするための方法およびコータ
JP2017218638A (ja) * 2016-06-08 2017-12-14 株式会社アルバック 成膜方法及び成膜装置
WO2018095514A1 (fr) * 2016-11-22 2018-05-31 Applied Materials, Inc. Appareil et procédé de dépôt de couches sur une surface
EP2293320B1 (fr) * 2005-12-14 2018-08-15 Cardinal CG Company Procédé de dépôt d'un film contenant de l'étain et du niobium
CN110144558A (zh) * 2019-04-29 2019-08-20 河南东微电子材料有限公司 一种磁控溅射镀膜设备
CN112813399A (zh) * 2021-02-04 2021-05-18 郑州大学 一种高熵金属玻璃防护涂层及制备方法
CN112831751A (zh) * 2021-02-04 2021-05-25 郑州大学 一种高温自转变非晶/纳米晶高熵氧化物薄膜、制备方法及应用
US20230085216A1 (en) * 2021-09-13 2023-03-16 Samsung Display Co., Ltd. Sputtering apparatus and method for thin film electrode deposition
US20230097276A1 (en) * 2020-03-13 2023-03-30 Evatec Ag Apparatus and process with a dc-pulsed cathode array

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Cited By (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0589699A1 (fr) * 1992-09-29 1994-03-30 The Boc Group, Inc. Dispositif et procédé de dépôt de films d'oxyde métallique
US5563734A (en) * 1993-04-28 1996-10-08 The Boc Group, Inc. Durable low-emissivity solar control thin film coating
EP0701270A1 (fr) 1994-09-06 1996-03-13 The Boc Group, Inc. Méthodes et appareil de pulvérisation sans vide
US5645699A (en) * 1994-09-06 1997-07-08 The Boc Group, Inc. Dual cylindrical target magnetron with multiple anodes
US6423419B1 (en) 1995-07-19 2002-07-23 Teer Coatings Limited Molybdenum-sulphur coatings
GB2303380A (en) * 1995-07-19 1997-02-19 Teer Coatings Ltd Improving the sputter deposition of metal-sulphur coatings
GB2303380B (en) * 1995-07-19 1999-06-30 Teer Coatings Ltd Metal-sulphur coatings
DE19610253A1 (de) * 1996-03-15 1997-10-09 Fraunhofer Ges Forschung Zerstäubungseinrichtung
DE19610253C2 (de) * 1996-03-15 1999-01-14 Fraunhofer Ges Forschung Zerstäubungseinrichtung
WO2000028104A1 (fr) * 1998-11-06 2000-05-18 Scivac Appareil de pulverisation cathodique et procede associe de depot a vitesse elevee
US6365010B1 (en) * 1998-11-06 2002-04-02 Scivac Sputtering apparatus and process for high rate coatings
JP2002529600A (ja) * 1998-11-06 2002-09-10 シヴァク 高レート・コーティング用のスパッタリング装置および方法
US6488824B1 (en) 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
WO2001040539A3 (fr) * 1999-12-03 2002-02-14 Univ California Procede et systeme concernant la distribution de flux et la formation de depot de films
EP1333106A1 (fr) * 2002-02-01 2003-08-06 PX Techs S.A. Procédé et installation de dépot d'un revêtement noir sur un substrat
WO2003064719A1 (fr) * 2002-02-01 2003-08-07 Px Tech S.A. Procede et installation de depot sous vide d'un revetement noir
WO2006038407A3 (fr) * 2004-09-14 2006-06-22 Shinmaywa Ind Ltd Appareil de formation de films sous vide
WO2006076345A3 (fr) * 2005-01-13 2006-12-21 Cardinal Cg Co Chambres de pulverisation a maintenance reduite
EP1775353A1 (fr) * 2005-09-15 2007-04-18 Applied Materials GmbH & Co. KG Installation de revêtement et procédé d'opération d'une installation de revêtement
WO2007038368A1 (fr) * 2005-09-23 2007-04-05 Bose Corporation Dispositif de pulverisation reactive a double magnetron avec alimentation en gaz synchronisee
EP2293320B1 (fr) * 2005-12-14 2018-08-15 Cardinal CG Company Procédé de dépôt d'un film contenant de l'étain et du niobium
WO2009007448A3 (fr) * 2007-07-12 2009-03-19 Materia Nova Dispositif de co-pulvérisation à magnétron
CN101874283B (zh) * 2007-08-15 2013-07-10 基恩科有限公司 低阻抗等离子体
WO2009022184A3 (fr) * 2007-08-15 2009-04-09 Gencoa Ltd Plasma de faible impédance
US9028660B2 (en) 2007-08-15 2015-05-12 Gencoa Ltd Low impedance plasma
CN101874283A (zh) * 2007-08-15 2010-10-27 基恩科有限公司 低阻抗等离子体
JP2010537041A (ja) * 2007-08-15 2010-12-02 ジェンコア リミテッド 低インピーダンスプラズマ
DE102008034960A1 (de) 2008-07-25 2010-01-28 Von Ardenne Anlagentechnik Gmbh Verfahren und Beschichtungskammer zur Beschichtung eines Substrats mit einer transparenten Metalloxid-Schicht
DE102009032152A1 (de) 2008-07-25 2010-04-15 Von Ardenne Anlagentechnik Gmbh Verfahren und Beschichtungskammer zur Beschichtung eines Substrats mit einer transparenten Metalloxid-Schicht
EP2216424A1 (fr) * 2009-02-06 2010-08-11 Centre Luxembourgeois de Recherches pour le Verre et la Céramique S.A. Techniques pour le dépôt de revêtements d'oxyde conducteurs transparents à l'aide d'appareils de pulvérisation C-MAG double
EP3293282A1 (fr) * 2009-02-06 2018-03-14 Guardian Europe S.à.r.l. Techniques pour le dépôt de revêtements d'oxyde conducteurs transparents à l'aide d'appareils de pulvérisation c-mag double
US20100200395A1 (en) * 2009-02-06 2010-08-12 Anton Dietrich Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses
US8182662B2 (en) 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
US8992742B2 (en) 2009-06-26 2015-03-31 Von Ardenne Anlagentechnik Gmbh Method for coating a substrate in a vacuum chamber having a rotating magnetron
JP2017128813A (ja) * 2009-10-02 2017-07-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板をコーティングするための方法およびコータ
EP2553137A4 (fr) * 2010-03-31 2015-10-21 Mustang Vacuum Systems Inc Dispositif à cathode de pulvérisation par magnétron tournant cylindrique et procédé de dépôt d'un matériau utilisant des émissions radiofréquences
WO2011129882A3 (fr) * 2010-04-16 2012-04-19 Guardian Industries Corp. Procédé de fabrication d'article recouvert ayant un revêtement antibactérien et/ou antifongique et produit résultant
US20120067717A1 (en) * 2010-09-17 2012-03-22 Guardian Industries Corp. Method of co-sputtering alloys and compounds using a dual C-MAG cathode arrangement and corresponding apparatus
WO2012036718A1 (fr) * 2010-09-17 2012-03-22 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C) Procédé amélioré de co-pulvérisation cathodique d'alliages et de composés à l'aide d'agencement de cathode c-mag double et appareil correspondant
US20130228452A1 (en) * 2010-11-17 2013-09-05 Soleras Advanced Coatings Bvba Soft sputtering magnetron system
US9394603B2 (en) * 2010-11-17 2016-07-19 Soleras Advanced Coatings Bvba Soft sputtering magnetron system
DE102011085888A1 (de) * 2011-11-08 2013-05-08 Von Ardenne Anlagentechnik Gmbh Beschichtungsverfahren zum Sputtern von Mischschichten und Vorrichtung zum Ausführen des Verfahrens
DE102012203152A1 (de) * 2012-02-29 2013-08-29 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum reaktiven Magnetronsputtern einer transparenten Metalloxidschicht
TWI595106B (zh) * 2012-05-29 2017-08-11 應用材料股份有限公司 用於塗佈一基板之方法及塗佈機
WO2013178252A1 (fr) * 2012-05-29 2013-12-05 Applied Materials, Inc. Procédé permettant de recouvrir un substrat et dispositif d'enrobage
JP2015524022A (ja) * 2012-05-29 2015-08-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板をコーティングするための方法とコーター
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US20150184285A1 (en) * 2013-12-30 2015-07-02 Samsung Display Co., Ltd. Sputtering apparatus and method thereof
WO2015158679A1 (fr) * 2014-04-18 2015-10-22 Soleras Advanced Coatings Bvba Système de pulvérisation pour pulvérisation uniforme
BE1021296B1 (nl) * 2014-04-18 2015-10-23 Soleras Advanced Coatings Bvba Sputter systeem voor uniform sputteren
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JP2017218638A (ja) * 2016-06-08 2017-12-14 株式会社アルバック 成膜方法及び成膜装置
WO2018095514A1 (fr) * 2016-11-22 2018-05-31 Applied Materials, Inc. Appareil et procédé de dépôt de couches sur une surface
CN109983150A (zh) * 2016-11-22 2019-07-05 应用材料公司 用于在基板上沉积层的设备和方法
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US20230097276A1 (en) * 2020-03-13 2023-03-30 Evatec Ag Apparatus and process with a dc-pulsed cathode array
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