[go: up one dir, main page]

WO1993005630A1 - Isolator d'harmonique et d'harmonique inferieur pour decharge de plasma - Google Patents

Isolator d'harmonique et d'harmonique inferieur pour decharge de plasma Download PDF

Info

Publication number
WO1993005630A1
WO1993005630A1 PCT/US1992/007566 US9207566W WO9305630A1 WO 1993005630 A1 WO1993005630 A1 WO 1993005630A1 US 9207566 W US9207566 W US 9207566W WO 9305630 A1 WO9305630 A1 WO 9305630A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrical
reactor
plasma
isolator
source
Prior art date
Application number
PCT/US1992/007566
Other languages
English (en)
Inventor
Paul A. Miller
Original Assignee
Sematech, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sematech, Inc. filed Critical Sematech, Inc.
Priority to JP5505456A priority Critical patent/JPH06510627A/ja
Priority to EP92919678A priority patent/EP0609237A1/fr
Publication of WO1993005630A1 publication Critical patent/WO1993005630A1/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32311Circuits specially adapted for controlling the microwave discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32688Multi-cusp fields
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to the field of plasma processing and, more particularly, to the use of plasma equipment for modification of materials.
  • Plasma processing equipment is used extensively in the industry for the modification of materials. These modifications include etching and deposition of films for fabrication of microelectronic circuits and semiconductor devices. The modifications also may include implantation of chemical species that change the friction and wear properties of surfaces.
  • a plasma is a gas (or a gas mixture) which is energized so that it is partially decomposed into species that are electrically charged.
  • a variety of techniques are known for energizing the gas.
  • One commonly used technique is the energizing of the gas by imposing an electric field on the gas from an external source.
  • a common practice is to use high frequency alternating- current (AC) fields to energize or excite the gas.
  • AC alternating- current
  • RF radio-frequency
  • microwave fields are generated. In some instances, these electric fields are utilized in combination with magnetic fields which are used for the purpose of confining the plasma.
  • Electron cyclotron resonance (ECR) plasma processing is one technique for controlling the plasma with the use of electric and magnetic fields.
  • the plasma is typically retained in a chamber of a processing equipment and isolated from the surrounding ambient and this plasma usually contains species that undergo chemical reactions.
  • the plasma chamber and its gas-handling equipment are typically referred to as a reactor.
  • the source of the electrical power that energizes the plasma is commonly referred to as a generator.
  • a generator there are a number of components, including cables, wave guides, inductors, capacitors, matching network, tuner and/or an impedance transforming network coupling the generator to the reactor. These components are included in a system sometimes referred to as a coupler or a coupling system.
  • the generator and the coupling system together comprise the AC source that energizes the plasma.
  • Non- linearity is a mathematical definition signifying that the magnitude of the voltage (electric field) in the plasma is not directly proportional to the magnitude of the current (magnetic field) .
  • the generators employed in various plasma systems are designed to generate an output of predominantly single-frequency.
  • signals at multiples of the fundamental generator frequency are generated by the plasma. These multiple frequencies of the fundamental frequency are called harmonic frequencies (or harmonics) .
  • the amplitude of the harmonics affect certain properties of the plasma, such as direct current (DC) bias, which impact the particular plasma process.
  • the amplitude of the harmonics is determined by the interaction of the plasma with the generator and the coupling system and is difficult to control simply by adjusting the amplitude of the fundamental frequency component.
  • Plasma non-linearity is a phenomenon which plays an important role in causing the plasma conditions to be dependent upon the electrical characteristics of the generator, as well as the coupling system, at both the operating (fundamental) frequency of the generator and at the various harmonic frequencies. That is, if satisfactory operation of a plasma reactor is achieved for a given generator and coupling system, the parameters of the generator and the coupling system cannot be readily changed without affecting the plasma itself.
  • the present invention describes a harmonic and sub- harmonic isolator for isolating a plasma reactor from its electrical energy source.
  • the isolator is an electrical filter which permits the passage of the fundamental frequency of an electrical energy source supplying electrical energy to the reactor, but blocks transmission of harmonic and sub-harmonic frequencies. Because the plasma operates with non-linear impedance characteristics and the amplitudes of these harmonics affect properties of the plasma, the plasma conditions are usually dependent upon the electrical characteristics of the generator, as well as the entire coupling system. However, by attenuating and substantially preventing the harmonics from interacting with the generator and with the coupling circuitry that couples the generator to the isolator, this dependence is eliminated.
  • the reactor is made to operate substantially independent of the effects in the change of the generator and/or the coupling system due to the harmonic isolation and permits substitution of the generator and/or the coupling system without undue hardship in tuning the system to reproduce the desired plasma conditions.
  • Figure 1 is a block diagram of a prior art plasma reactor showing a generator and a reactor coupled by a coupler.
  • Figure 2 is a block diagram of a plasma reactor system of the present invention utilizing an isolator to isolate the reactor from the generator and the coupler.
  • Figure 3 is a circuit schematic diagram of a low- pass filter which is utilized as one embodiment for the isolator of Figure 2.
  • Figure 4 is a graphic representation of a frequency response curve V ou ⁇ /V w of an ideal filter and measured values for the circuit of Figure 3.
  • FIG. 5 is a block diagram showing four different plasma system arrangements with and without the isolator of the present invention which were used in providing experimental results.
  • Figure 6 is a graphical representation of DC Bias voltage measured for the eight systems shown in Figure 5.
  • Figure 7 is a graphical representation of plasma voltages measured for the eight systems shown in Figure 5.
  • Figure 8 is a graphical representation of plasma currents measured for the eight systems shown in Figure 5.
  • Figure 9 is a graphical representation of phase differences for plasma voltages and currents measured for the eight systems shown in Figure 5.
  • Figure 10 is a graphical representation of harmonic and sub-harmonic components of the reactor current versus reactor power.
  • Figure 11 is a graphical representation of harmonic and sub-harmonic components of the reactor voltage versus reactor power.
  • a generator 10 for providing an alternating current electric field to energize or excite the gas (or gas mixture) to form the plasma is coupled to reactor 12 through a coupler 11.
  • the generator 10 is typically of RF or microwave frequency in which the desired operating (fundamental) frequency is selected.
  • the amplitude of the output of generator 10 is adjustable.
  • Reactor 12 includes the equipment containing the plasma chamber, as well as its gas handling apparatus.
  • the plasma gas (or gas mixture) is introduced into the chamber for it to operate on a target device.
  • the target device for whose properties are to be modified is also present in the chamber.
  • the coupler 11 can be of a variety of couplers utilized in coupling generator 10 to reactor 12.
  • coupler 11 can be a blocking capacitor or an impedance matching network. Although shown as coupler 11, it also includes the complete coupling system, including the various transmission cables, wave guides, connectors, etc. , which comprise the tra ⁇ smission medium between generator 10 and reactor 12.
  • the purpose of the coupler 11 is to match the impedance, as well as other circuit parameters, between the generator 10 and reactor 12, in order to provide for an efficient transfer of electrical energy from generator 10 to reactor 12.
  • a particular reactor 12 is coupled to operate with a particular generator 10 and coupler 11.
  • considerable amount of tuning is required to obtain those desired plasma conditions in reactor 12.
  • the amplitude of generator 10 can be adjusted to vary the plasma conditions in reactor 12.
  • a significant disadvantage of the prior art plasma system of Figure 1 is that the desired plasma conditions typically cannot be reproduced readily, if any significant characteristic of the generator 10 and/or the coupler 11 is changed.
  • the system of Figure 1 In order to obtain the desired plasma conditions again, the system of Figure 1 must be retuned to accommodate the new generator and/or coupler. Thus, the system of Figure 1 must necessarily depend on the particular generator 10 and coupler 11 to be tuned to operate with reactor 12. In the event a component having different electrical characteristics is to be substituted, considerable amount of time and effort are required to retune the system. Thus, anytime generator 10 and/or coupler 11 require repair and/or service, the plasma system will necessarily require a complete "shut- down" while the reactor is reconfigured and retuned to the new system. In practice, the lack of reproducibility of desired plasma conditions in reactor 12 provides for an inflexible system which may pose economic hardship to the user of the plasma equipment.
  • a plasma reactor system of the present invention is shown.
  • the apparatus of the present invention is comprised of the same prior art generator 10, coupler 11 and reactor 12.
  • isolator 19 of the present invention is inserted between coupler 11 and reactor 12.
  • the purpose of isolator 19 is to isolate the reactor 12 from the electrical energy generating source and transmission medium provided by generator 10 and coupler 11.
  • Isolator 19 is designed to permit the transmission of the electrical energy at the fundamental operating frequency of the generator 10, but to inhibit the transmission of higher frequencies, predominantly the harmonics. Therefore, the harmonic content of the electrical signal from reactor 12 is significantly prevented from reaching coupler 11 and generator 10. Because of the harmonic isolation, the plasma in reactor 12 cannot interact with, nor respond to changes in, the impedances of generator 10 and coupler 11 at the harmonic frequencies. Changes made to generator 10 and/or coupler 11 can be readily compensated by the adjustment of the amplitude of the output signal from generator 10, which is for the purpose of adjusting the amplitude of the fundamental frequency component.
  • substitutions for generator 10 and coupler 11 can be readily made by non-identical generators and couplers, wherein the desired plasma conditions in the reactor 12 can be reproduced by adjusting the amplitude of the output signal from generator 10.
  • the harmonics generated due to the non-linearity of the plasma are prevented from substantially interacting with the generator 10 and/or the coupler 11.
  • a variety of interactions can occur, one such being the change of the impedance of the generator 10 and/or coupler 11 caused by the harmonics.
  • Another interaction being the feedback of harmonics generated by reactor 12, transmitted to generator 10 and coupler 11, and reflected from generator 10 and/or coupler 11, so as to either strengthen or cancel the harmonics at the reactor 12.
  • the preferred embodiment utilizes a tuned electrical filter.
  • the tuned electrical filter of the preferred embodiment is a low-pass filter and is shown in Figure 3.
  • the particular low-pass filter utilized in the preferred embodiment is a Chebyshev filter, which is comprised of five circuit components 22-26.
  • Two rr-sections are utilized between input terminals 20 and output terminals 21.
  • the input terminals 20 are coupled to the coupler 11 (actually the transmission medium)
  • the output terminals 21 are coupled to reactor 12.
  • One of the input terminals 20 and one of the output terminals 21 are coupled together to operate as an electrical return (typically ground potential of the electrical system) .
  • Capacitor 22 is coupled across the input terminals 20, while capacitor 24 is coupled across the output terminals 21.
  • Two inductors 25 and 26 are coupled in series between the non-returning input and output terminals.
  • a third capacitor 23 is coupled between the junction of the two inductors and the return line.
  • capacitors 22 and 24 have the values of 220.9 pF, while capacitor 23 has the value of 310.6 pF.
  • the inductors 25 and 26 each have a value of 935.1 nH.
  • Figure 4 shows a graphical representation of the theoretically designed response of the filter of Figure 3 as curve 18 and the actual measured response of the filter of Figure 3 as curve 29. As is noted, the fundamental frequency is set at 13.56 MHz.
  • the second harmonic frequency of 27.12 MHz is well below the -3 db point.
  • the fundamental frequency component from generator 10 is passed through coupler 11 and through the isolator 19 to energize the plasma in reactor 12.
  • the desired operating conditions can be readily achieved by adjusting the amplitude of generator 10. Accordingly, substitution of generator 10, coupler 11 and/or other components in the transmission medium can be easily compensated by adjusting the amplitude of generator 10 to obtain the desired plasma conditions in reactor 12.
  • reactor 12 can be readily coupled to a variety of generators, couplers, and/or transmission medium, wherein the desired plasma conditions can be readily reproduced by simply adjusting the frequency of the generator 10 to the desired fundamental frequency and adjusting the amplitude of the electrical signal from generator 10.
  • FIG. 5 block diagrams for four different plasma systems with and without the isolator 19 are shown. These eight different arrangements provided the experimental results illustrated in Figures 6-9.
  • generator 31 is coupled to reactor 33 (designated also as "Reactor A") , wherein blocking capacitor 35 is utilized as part of coupler 11.
  • a second generator 32 is coupled to reactor 33 through the blocking capacitor 35.
  • generator 32 is coupled to a second reactor 34 (designated also as "Reactor B") through the blocking capacitor 35.
  • Configuration IV generator 32 is coupled to the same reactor 34, but a matching network 36 is utilized instead of blocking capacitor 35.
  • isolator 19 (shown as dotted in Figure 5) is now included and represent four arrangements I F , II F , III F , and IV F .
  • the results of the four configurations with and without the filter of the present invention are shown in the resultant graphs of Figures 6-9. All data represent discharges in argon gas at 100 mTorr pressure and 200 volts peak-to-peak excitation at fundamental frequency of 13.56 MHz.
  • the first generator 31 is model SG-1250 manufactured by R.D. Mathis Co.
  • the second generator 32 is model ACG-5 manufactured by ENI Power Systems.
  • the matching network 36 is "Matchwork MW-5", also from ENI Power Systems.
  • Figures 6-9 in all four of these graphs, the results obtained from the first two configurations (I and II) pertaining to reactor A are shown on the left half portion of the diagram, while configurations III and IV, pertaining to reactor B are shown on the right half portion of the diagram.
  • Figure 6 shows the measurement of the DC Bias voltage in each of the con igurations.
  • Figure 7 shows the magnitude of the Fourier coefficients of the fundamental (VI) and the second harmonic (V2) of the plasma voltage in each of the four configurations with and without the filter.
  • Figure 8 shows the magnitude of the Fourier coefficient of the plasma current at the fundamental (II) and at the second harmonic frequency (12) in each of the four configurations with and without the filter.
  • Figure 9 shows the phase ⁇ of the Fourier coefficients of the voltages VI, V2 and current 12. The phase of the current II is not indicated on the graph simply because the selected value for the phase of II is chosen as zero degrees.
  • Chebyshev low-pass filter is shown in four experimental configurations of plasma systems, the type of filter is a mere design choice. A variety of other configurations can be readily adapted for use with the isolator of the present invention.
  • the frequency of operation is a design choice and can be readily selected in the RF, microwave or other bands.
  • the filter will necessarily be designed to reflect the frequency of operation. It is to be noted also that the isolator can be designed as part of the reactor equipment.
  • the low-pass filter will generally remove the harmonic frequencies above the fundamental frequency, which suffices in most instances to function adequately to isolate the electrical source from the non-linear response of the plasma, experimentation has shown that in some instances sub-harmonic frequencies (below the fundamental frequency) are generated along with the harmonic frequencies (above the fundamental frequency) .
  • This general type of phenomenon is known as a period- doubling bifurcation phenomenon and it is a well-known property of many non-linear dynamical systems.
  • the sub-harmonics are not present or are of sufficiently low levels as not to interfere with the electrical source.
  • sub- harmonic generation and interaction can become quite significant.
  • FIG. 10 shows the reactor current response
  • Figure il shows the reactor voltage response to a given power input to the reactor.
  • the response of the plasma was limited to the generation of harmonics above the fundamental at power levels under 700 watts.
  • the f/2 component and its multiples (3f/2, 2f, and 5f/2) have significant energy content.
  • the 2f component is normally present, but has not increased substantially at 700 watts due to the added energy content from the sub-harmonic generation. (Note that 2f is a multiple of f/2, as well as f) .
  • sub-harmonic components such as f/3, f/4, f/5, etc.
  • the energy component in these other sub-harmonic components are generally less than the f/2 component.
  • these components may still interact with the electrical source.
  • a low-pass filter would suffice in instances of reactor operation under 700 watts in the example of Figures 10 and 11, a different filter will need to be utilized to isolate the electrical source from the sub-harmonic components above 700 watts in this particular example.
  • the filter will need to be designed to permit the passage of the fundamental frequency but to remove the undesirable harmonic and/or sub-harmonic components.
  • the low-pass filter described above can be readily combined with a high-pass filter for removing the sub-harmonics, but wherein the high-pass and low-pass filter responses do not overlap, thereby permitting the fundamental frequency to be coupled through to the reactor.
  • a notch filter would provide the same response in which a narrow spectrum of frequencies around the fundamental is permitted to reach the reactor, but where the harmonics and sub-harmonics generated by the plasma do not interfere with the electrical source.
  • sub-harmonic components may be generated due to the period-doubling bifurcation phenomenon and in which case these sub-harmonic frequency components are removed in order to fully isolate the electrical source from the reactor.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Un isolateur est placé entre un réacteur de plasma et sa source d'énergie électrique afin d'isoler le réacteur de ladite source d'énergie électrique. L'isolateur fonctionne comme un filtre pour atténuer la transmission d'harmoniques d'une fréquence fondamentale de la source d'énergie électrique générée par le réacteur à partir de l'interaction avec la source d'énergie. En empêchant l'interaction d'harmonique et d'harmonique inférieur avec la source d'énergie, les caractéristiques du plasma peuvent être facilement reproduites indépendamment des caractéristiques électriques de la source d'énergie électrique et/ou de son réseau de couplage associé.
PCT/US1992/007566 1991-09-09 1992-09-08 Isolator d'harmonique et d'harmonique inferieur pour decharge de plasma WO1993005630A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5505456A JPH06510627A (ja) 1991-09-09 1992-09-08 プラズマ放電用低域フィルタ
EP92919678A EP0609237A1 (fr) 1991-09-09 1992-09-08 Isolator d'harmonique et d'harmonique inferieur pour decharge de plasma

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US75664991A 1991-09-09 1991-09-09
US756,649 1991-09-09
US89347592A 1992-06-04 1992-06-04
US893,475 1992-06-04

Publications (1)

Publication Number Publication Date
WO1993005630A1 true WO1993005630A1 (fr) 1993-03-18

Family

ID=27116269

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1992/007566 WO1993005630A1 (fr) 1991-09-09 1992-09-08 Isolator d'harmonique et d'harmonique inferieur pour decharge de plasma

Country Status (3)

Country Link
EP (1) EP0609237A1 (fr)
JP (1) JPH06510627A (fr)
WO (1) WO1993005630A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002015649A3 (fr) * 2000-08-17 2002-05-02 Tokyo Electron Ltd Structure d'adaptation a couplage serre pour electrode de commande rf
WO2003050842A1 (fr) * 2001-12-10 2003-06-19 Tokyo Electron Limited Procede et dispositif permettant d'eliminer des harmoniques dans des systemes de traitement au plasma de semi-conducteurs
CN112242285A (zh) * 2019-07-16 2021-01-19 细美事有限公司 用于处理基板的装置和方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3008038B2 (ja) * 1991-08-09 2000-02-14 住友金属工業株式会社 平行平板型プラズマ装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4824546A (en) * 1986-08-20 1989-04-25 Tadahiro Ohmi Semiconductor manufacturing apparatus
FR2663806A1 (fr) * 1990-06-25 1991-12-27 Commissariat Energie Atomique Reacteur a plasma du type triode, utilisable notamment pour la gravure, le depot ou le nettoyage de surfaces.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4824546A (en) * 1986-08-20 1989-04-25 Tadahiro Ohmi Semiconductor manufacturing apparatus
FR2663806A1 (fr) * 1990-06-25 1991-12-27 Commissariat Energie Atomique Reacteur a plasma du type triode, utilisable notamment pour la gravure, le depot ou le nettoyage de surfaces.

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J. Appl. Phys., Vol. 71, No. 3, February 1992 Paul A. Miller: "Electrical isolation of radio-frequency plasma discharges ", *
Patent Abstracts of Japan, Vol 12, No 219, C506, abstract of JP 63- 14863, publ 1988-01-22 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002015649A3 (fr) * 2000-08-17 2002-05-02 Tokyo Electron Ltd Structure d'adaptation a couplage serre pour electrode de commande rf
US6657395B2 (en) 2000-08-17 2003-12-02 Tokyo Electron Limited Close coupled match structure for RF drive electrode
WO2003050842A1 (fr) * 2001-12-10 2003-06-19 Tokyo Electron Limited Procede et dispositif permettant d'eliminer des harmoniques dans des systemes de traitement au plasma de semi-conducteurs
US7102292B2 (en) 2001-12-10 2006-09-05 Tokyo Electron Limited Method and device for removing harmonics in semiconductor plasma processing systems
CN112242285A (zh) * 2019-07-16 2021-01-19 细美事有限公司 用于处理基板的装置和方法

Also Published As

Publication number Publication date
JPH06510627A (ja) 1994-11-24
EP0609237A1 (fr) 1994-08-10

Similar Documents

Publication Publication Date Title
US5325019A (en) Control of plasma process by use of harmonic frequency components of voltage and current
US5573595A (en) Methods and apparatus for generating plasma
US6642661B2 (en) Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor
US7100532B2 (en) Plasma production device and method and RF driver circuit with adjustable duty cycle
KR100849708B1 (ko) 이중 주파수 rf 소오스를 사용한 플라즈마 생성 및 제어
US7510665B2 (en) Plasma generation and control using dual frequency RF signals
US7084832B2 (en) Plasma production device and method and RF driver circuit with adjustable duty cycle
US4871421A (en) Split-phase driver for plasma etch system
EP0840350A2 (fr) Appareil et procédé à plasma avec filtrage des harmoniques produits dans la gaine de plasma
TW530324B (en) Addition of power at selected harmonics of plasma processor drive frequency
DE4132558C1 (fr)
US9105449B2 (en) Distributed power arrangements for localizing power delivery
CA2463528A1 (fr) Procede et dispositif de production de plasma, et circuit d'attaque hf
JPH02501608A (ja) 多電極プラズマ反応器電力分配装置
EP1689907A2 (fr) Procede et dispositif de production de plasma, et circuit d'attaque rf a facteur d'utilisation ajustable
KR20050106409A (ko) 플라즈마 챔버에서 이온 폭격 에너지를 최소화하는메커니즘
US6016766A (en) Microwave plasma processor
US5302882A (en) Low pass filter for plasma discharge
WO1993005630A1 (fr) Isolator d'harmonique et d'harmonique inferieur pour decharge de plasma
US6790487B2 (en) Active control of electron temperature in an electrostatically shielded radio frequency plasma source
CN101147237A (zh) 使用双频率射频源的等离子体产生与控制
KR102223875B1 (ko) 다중 주파수를 사용하는 건식 식각 장비를 위한 고주파 전원 장치
Jaiprakash et al. Plasma impedance and microwave interferometric measurements of electron concentrations in dual‐frequency powered sulfur hexafluoride plasmas

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LU MC NL SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1992919678

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1992919678

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1992919678

Country of ref document: EP