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WO1993012534A1 - Analyseur d'energie - Google Patents

Analyseur d'energie Download PDF

Info

Publication number
WO1993012534A1
WO1993012534A1 PCT/GB1992/002308 GB9202308W WO9312534A1 WO 1993012534 A1 WO1993012534 A1 WO 1993012534A1 GB 9202308 W GB9202308 W GB 9202308W WO 9312534 A1 WO9312534 A1 WO 9312534A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode layer
layer
charged particles
collector electrode
collector
Prior art date
Application number
PCT/GB1992/002308
Other languages
English (en)
Inventor
Simon Gareth Ingram
Nicholas St. John Braithwaite
Nigel Roderick Couch
Original Assignee
Gec-Marconi Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gec-Marconi Limited filed Critical Gec-Marconi Limited
Publication of WO1993012534A1 publication Critical patent/WO1993012534A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/025—Detectors specially adapted to particle spectrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2444—Electron Multiplier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24485—Energy spectrometers

Definitions

  • This invention relates to an energy analyser for measuring the energy of charged particles which are incident on a planar surface in a low-pressure environment, such as, for example, in a plasma processing equipment.
  • an energy measuring device comprising a monolithic structure including a planar collector electrode layer and a. rejection electrode layer separated from the collector electrode layer by a first layer of insulating material, said rejection electrode layer and said first layer of insulating material being apertured to allow charged particles from a source of charged particles to flow therethrough towards the collector electrode layer; the device further comprising electrical potential supply means for biasing the collector electrode layer and the rejection electrode layer to cause charged particles of a given polarity and of kinetic energy less than a predetermined level to be repelled away from the collector electrode layer so that the collector electrode layer receives only particles of said given polarity having a kinetic energy equal to or greater than said level; and means to measure the quantity of charged particles reaching the collector electrode layer.
  • the collector electrode layer is preferably biased to repel said particles having a kinetic energy less than said predetermined level.
  • the rejection electrode layer is preferably biased to reject charged particles of the opposite polarity.
  • the monolithic structure may also include an apertured shielding electrode layer separated from the rejection electrode layer by a second layer of insulating material, the shielding electrode layer serving to shield the source of charged particles from the potential applied within the monolithic structure. Further apertured shielding electrode layers may also be provided.
  • Figure 1 is a schematic plan view of a monolithic structure for use in the present invention
  • Figure 2 is a schematic cross-sectional view taken along a line II-II of Figure 1, and
  • Figures 3 and 4 illustrate, schematically, the operation of the device of Figures 1 and 2 when analysing positive ions and electrons, respectively.
  • a monol thic structure 1 for collecting charged particles comprises a substrate 3 on which is deposited, for example by sputtering, a layer 5 of electrically-conductive material.
  • the substrate 3 may be formed of, for example, silicon, and the layer 5 may be, for example, a layer of tungsten of, say, 500 nm thickness.
  • the layer 5 is to form a retarding collector electrode, as will be explained later.
  • a dielectric layer 7 is then deposited over the layer 5.
  • the layer 7 may be formed of, for example, a spin-on silica glass, the number of glass depositions and the spin speed being chosen such that, after baking, the overall thickness of the layer 7 is, for example, approximately 2000 nm.
  • a layer of photoresist material (not shown) is then spun on to the layer 13.
  • the photoresist is then exposed and developed by conventional techniques to produce an apertured mask for use in subsequent etching of the underlying layers.
  • the mask is firstly used for defining apertures which are formed through the layer 13 by wet or dry etching.
  • the regions of the glass layer 11 which are thereby exposed are then removed by etching anisotropically, using a dry etching process, such as reactive ion etching, thereby exposing corresponding regions of the conductive layer 9.
  • the etching steps are then repeated to remove corresponding regions of the conductive layer 11 and the dielectric layer 7.
  • Apertures 15, 17, 19 are thereby formed through the layers 7-13, extending down to the conductive layer 5.
  • the remainder of the photoresist layer is then removed.
  • the current collection area can be increased by making the apertures 15, 17, 19 elongate trenches as shown in Figure 1. They may be, for example, 1000 nm wide and 5 mm long. However, the apertures may alternatively be of any other required shape. For the sake of clarity of the drawings, only three apertures are shown, but in practice there will be many such apertures distributed over the area of the structure.
  • a further layer of photoresist is then deposited over the whole structure, including the apertures, and is exposed and developed to produce an etch mask through which a larger aperture 21 extending down to the layer 9 is subsequently etched, so that a bond pad can be formed on that layer. Further deposition, exposure and development of photoresist are then effected to define a similar aperture 23, which is produced by etching through the glass and tungsten layers as described above. The aperture 23 extends down to the layer 5, so that a bond pad can be formed on that layer. All remaining photoresist material is then removed. A bond pad 25 is provided on the shielding grid layer 13.
  • the collector electrode layer may be treated to reduce the rate of emission of secondary electrons or ions and the reflection of incident charges which would otherwise contribute to the collector current.
  • the exposed portions of the surface of the collector layer 5 may be coated with graphite, or its surface may be roughened during the construction.
  • All of the layers of the monolithic structure should adhere well to each other, and they should preferably have similar coefficients of thermal expansion.
  • the particles source is an electrical plasma
  • the layers should not be chemically active with species in the plasma, nor should they contaminate the plasma, nor be excessively eroded by it.
  • the spacing between the conductive layers 5, 9 and 13, i.e. the thickness of the dielectric layers 7 and 11, should preferably be much larger than the characteristic diameter of the apertures in the layers 9 and 13.
  • the spacing should also be smaller than the mean free path of the electrical charges being analysed, over the expected range of operating pressures.
  • the dielectric material of the layers 7 and 11 might be replaced by a highly resistive material, such as polycrystalline silicon, which would allow charges incident on the exposed regions to be conducted away. This would prevent an accumulation of surface charge, which could otherwise affect the performance of the device.
  • a highly resistive material such as polycrystalline silicon
  • the contact pads may be formed before the apertures are defined.
  • MOCVD metal organic chemical vapour deposition
  • Control and signal processing electronic circuitry for the device may be provided on the substrate 3, preferably before the formation of the apertured layers described above. Electrical connections to the circuitry are then made after the formation of the layers.
  • Such an arrangement would provide a better signal-to-noise ratio and reduce the cost of the electronics in applications where the electronics can be located inside the same enclosure (e.g. a plasma reactor) as the monolithic structure.
  • a plasma reactor e.g. a plasma reactor
  • the device is to be used in a vacuum or low-pressure environment for measuring the energy and direction of movement of charged particles having either positive or negative charge.
  • the charged particles may emanate from, for example, an electrical plasma discharge or may be generated in use of ion beam or electron beam apparatus (for example in microscopes).
  • an electrical potential is applied to the collector layer 5 such as to retard the approach of charged particles. Only charges with sufficient kinetic energy will be able to surmount this electrical potential barrier and reach the surface of the collector layer. By determining the number of charges which reach the collector layer as a function of the varying retarding potential applied to it, it is possible to deduce the energy distribution of charges incident on the device.
  • the optimum size, shape, density and depth of the apertures will depend upon the use to which the device is to be put and the materials used in fabricating the monolithic structure. However, they should preferably be sufficiently small to ensure that the strength of the electrical space-potential does not vary significantly in the plane of the particular grid layer. Hence, they should at least be smaller than the plasma Debye length.
  • the rejecting grid layer 9 is set at a potential such as to reject particles of polarity opposite to that of the particles being analysed.
  • This potential may, in some cases, be such as to disturb the nature of the plasma, or other particle source, to such an extent that the measurement is invalid. It is in order to protect the source from this potential that the shielding grid layer 13 is provided between the source and the rejecting grid layer.
  • the shielding grid layer is preferably set at a potential which is fixed and is negative with respect to the plasma, in which case it will retard a number of the negative charges emanating from the plasma and flowing towards the monolithic structure. If desired, additional aperture shielding grids may be provided.
  • Figure 3 illustrates, schematically, the action of the monolithic structure when analysing positive ions emanating from an electrical plasma 27.
  • the shielding grid layer 13 which is held at a negative potential with respect to the plasma, rejects some electrons from the plasma, such as indicated by an arrow 29, but tends to return negative charges to the collector electrode layer which might otherwise have escaped from that layer.
  • the rejecting grid layer 9 is held at a potential which is very negative relative to the plasma, and rejects more negative charges, as indicated by an arrow 31.
  • the collector electrode layer 5 which is at a potential which can be varied with respect to the plasma, rejects or collects positive ions, as indicated by arrows 33 and 35, respectively, depending upon the energy of the ions in relation to the collector potential.
  • a measuring instrument 36 is provided to measure the quantity of ions collected.
  • Figure 4 illustrates, schematically, the action of the monolithic structure when analysing negative charges emanating from the plasma 27.
  • the shielding grid layer 13 which is held at a negative potential with respect to the plasma, rejects some negative charges, as indicated by an arrow 37.
  • the rejecting grid layer 9 is held at a potential which is positive with respect to the plasma and rejects positive ions, as indicated by an arrow 39.
  • the collector electrode layer 5 is at a negative potential relative to the plasma, which potential can be varied. This layer rejects or collects negative charges, as indicated by arrows 41 and 43, respectively, depending upon the energy of the negative charges in relation to the collector potential.
  • a measuring instrument 45 is provided to measure the quantity of electrons collected.
  • the monolithic layer structure of the present invention provides a number of advantages over the conventional charged particle analysers. It can measure the energy distribution of charged particles of either polarity. It operates without the use of any additional vacuum pumping equipment beyond that required for the process under investigation (e.g. plasma processing). It can be made at very low cost and in large quantities. It could therefore be used as a disposable device which could be replaced when it became damaged or contaminated or when it required updating. It is so compact that it can be used where space limitations would preclude the use of the conventional analysers. It could be positioned on the surface of an electrode, where the presence of active cooling inside the electrode would preclude the use of a conventional analyser.
  • the compact nature of the structure reduces scattering within the structure by background gas molecules and therefore makes it possible to operate over a larger pressure range than those known analysers which do not employ additional vacuum pumping equipment. Due to the apertures in the layers, the monolithic structure restricts the angle of acceptance for incident charged particles and can therefore be made and operated with directional sensitivity. The conventional analysers are not directional unless additional equipment is provided.
  • the device could be used in an alternative mode of operation in which a retarding potential is applied to the grid layer 9, and the collector electrode layer 5 is used solely for the- purpose of measuring the quantity of charge received by the layer 5, without itself providing a retarding field.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)

Abstract

Dispositif de mesure de l'énergie de particules chargées dans un milieu en dépression, par exemple dans un appareil d'attaque au plasma. Le dispositif présente une structure monolithique. Cette structure comporte une couche à électrode collectrice (5) et une couche à électrode de rejet (9) séparée de la couche collectrice par une couche isolante. Des ouvertures sont ménagées dans les couches collectrice et de rejet afin de permettre aux particules chargées de s'écouler en direction de la couche collectrice. Le dispositif comprend également une source de tension servant à polariser les couches collectrice et de rejet afin que les particules chargées ayant une polarité donnée (29) et une énergie cinétique inférieure à un seuil prédéterminé (33) soient repoussées par la couche collectrice. De ce fait, cette dernière ne reçoit que les particules ayant cette polarité et une énergie cinétique supérieure. On mesure la quantité de particules chargées reçue par ladite couche collectrice.
PCT/GB1992/002308 1991-12-13 1992-12-11 Analyseur d'energie WO1993012534A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9126507A GB2262649B (en) 1991-12-13 1991-12-13 Energy analyser
GB9126507.4 1991-12-13

Publications (1)

Publication Number Publication Date
WO1993012534A1 true WO1993012534A1 (fr) 1993-06-24

Family

ID=10706219

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1992/002308 WO1993012534A1 (fr) 1991-12-13 1992-12-11 Analyseur d'energie

Country Status (2)

Country Link
GB (1) GB2262649B (fr)
WO (1) WO1993012534A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996016430A1 (fr) * 1993-09-22 1996-05-30 Northrop Grumman Corporation Detecteur universel de gas pour spectrographe de masse microusine a semiconducteurs
GB2315362A (en) * 1996-07-12 1998-01-28 Analytical Precision Ltd Mass spectrometers
DE10258118A1 (de) * 2002-12-06 2004-07-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Messen und zur Bestimmung von Ladungsträgerströmen und davon ableitbaren Größen in ionen- und plasmagestützten Prozessen
WO2011151541A2 (fr) 2010-06-03 2011-12-08 Ion Beam Services Détecteur d'électrons secondaires énergétiques
CN103003912A (zh) * 2010-06-03 2013-03-27 离子射线服务公司 用于等离子体浸没离子注入的剂量测量设备

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5492867A (en) * 1993-09-22 1996-02-20 Westinghouse Elect. Corp. Method for manufacturing a miniaturized solid state mass spectrograph
US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
US5633497A (en) * 1995-11-03 1997-05-27 Varian Associates, Inc. Surface coating to improve performance of ion trap mass spectrometers
DE102014110334A1 (de) * 2014-07-22 2016-01-28 Krohne Messtechnik Gmbh Verfahren zur Trennung von elektrisch geladenen Teilchen bezüglich ihrer Energie und Energiefilter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260844A (en) * 1964-01-31 1966-07-12 Atomic Energy Commission Calutron with means for reducing low frequency radio frequency signals in an ion beam
US4246479A (en) * 1978-02-20 1981-01-20 National Research Development Corporation Electrostatic energy analysis
US4608493A (en) * 1983-05-09 1986-08-26 Sony Corporation Faraday cup

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823705B2 (ja) * 1977-08-24 1983-05-17 株式会社東芝 放射線検出器
US4703256A (en) * 1983-05-09 1987-10-27 Sony Corporation Faraday cups
GB8821496D0 (en) * 1988-09-14 1988-10-12 Univ Manchester Charged particle multidetector
GB8914910D0 (en) * 1989-06-29 1989-08-23 Vg Instr Group Charge transducer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260844A (en) * 1964-01-31 1966-07-12 Atomic Energy Commission Calutron with means for reducing low frequency radio frequency signals in an ion beam
US4246479A (en) * 1978-02-20 1981-01-20 National Research Development Corporation Electrostatic energy analysis
US4608493A (en) * 1983-05-09 1986-08-26 Sony Corporation Faraday cup

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A. vol. 9, no. 2, April 1991, NEW YORK US pages 364 - 368 P. K. BATTACHARYA ET AL 'A MICRON SCALE FARADAY CUP FOR ELECTRON BEAM CURRENT MEASUREMENTS' *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996016430A1 (fr) * 1993-09-22 1996-05-30 Northrop Grumman Corporation Detecteur universel de gas pour spectrographe de masse microusine a semiconducteurs
GB2315362A (en) * 1996-07-12 1998-01-28 Analytical Precision Ltd Mass spectrometers
DE10258118A1 (de) * 2002-12-06 2004-07-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Messen und zur Bestimmung von Ladungsträgerströmen und davon ableitbaren Größen in ionen- und plasmagestützten Prozessen
WO2011151541A2 (fr) 2010-06-03 2011-12-08 Ion Beam Services Détecteur d'électrons secondaires énergétiques
CN103003912A (zh) * 2010-06-03 2013-03-27 离子射线服务公司 用于等离子体浸没离子注入的剂量测量设备
CN103003911A (zh) * 2010-06-03 2013-03-27 离子射线服务公司 高能次生电子检测器
CN103003912B (zh) * 2010-06-03 2016-01-13 离子射线服务公司 用于等离子体浸没离子注入的剂量测量设备

Also Published As

Publication number Publication date
GB2262649B (en) 1995-03-01
GB9126507D0 (en) 1992-02-12
GB2262649A (en) 1993-06-23

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