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WO1996006694A1 - Traitement de modification de surfaces de substrats de dispositifs a ecran plat - Google Patents

Traitement de modification de surfaces de substrats de dispositifs a ecran plat Download PDF

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Publication number
WO1996006694A1
WO1996006694A1 PCT/US1995/011002 US9511002W WO9606694A1 WO 1996006694 A1 WO1996006694 A1 WO 1996006694A1 US 9511002 W US9511002 W US 9511002W WO 9606694 A1 WO9606694 A1 WO 9606694A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
mask
substrate
polyimide
patterned
Prior art date
Application number
PCT/US1995/011002
Other languages
English (en)
Inventor
David J. Elliott
Richard F. Hollman
Francis M. Yans
Daniel K. Singer
Original Assignee
Uvtech Systems, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uvtech Systems, Inc. filed Critical Uvtech Systems, Inc.
Priority to EP95931020A priority Critical patent/EP0802835A1/fr
Priority to JP8508946A priority patent/JPH10506201A/ja
Priority to AU34608/95A priority patent/AU3460895A/en
Publication of WO1996006694A1 publication Critical patent/WO1996006694A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/126—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of gases chemically reacting with the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4864—Cleaning, e.g. removing of solder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/087—Using a reactive gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/288—Removal of non-metallic coatings, e.g. for repairing

Definitions

  • Flat panel displays have applications in appliances, personal computers, and many other areas where alphanumeric displays are used. Their use is steadily increasing as technology improvements allow flat panel displays increasingly to be used in place of cathode ray tubes.
  • the cross section of a liquid crystal device contains the liquid crystal 2 in a "sandwich" between two sheets of electrodes.
  • the electrode 4 is typically a feature formed on a thin film of a transparent conducting material such as indium tin oxide (ITO) , on a glass substrate 6.
  • ITO indium tin oxide
  • the electrode is covered by an insulating layer 8 to prevent arcing through the liquid crystal, and an alignment layer 10, typically of polyimide, to orient the liquid crystal molecules.
  • Polarizing layers 12, oriented perpendicular to one another, are applied to the outside of the glass substrates so that transmitted light is normally blocked.
  • the region of liquid crystal between the electrodes rotates the plane of polarization so that light is transmitted through the device in this region.
  • the voltages are applied from an external controller (not shown) , which charges selected electrodes in the proper sequence to form the desired alphanumeric characters.
  • Another issue is stripping photoresist from the substrate following a photolithographic patterning step. There are several methods for doing this, including plasma ashing and solvent rinses. Current methods are either costly due to chemical usage, or time consuming, or both. Another issue is the curing of both the polyimide alignment layer and the spin-on dielectric used for insulation over the electrodes. Current methods involve a time consuming and energy consuming oven bake cycle.
  • the invention features processing a surface of a flat panel display substrate by providing a moving fluid, including a reactant, and delivering pulsed radiation to the surface of the flat substrate in the presence of the fluid, such that a surface modification reaction takes place.
  • the surface modification reaction may include removal of material to clean the surface.
  • the surface may be glass or ITO. A thin layer of less than 100 Angstroms of ITO may be removed.
  • the material to be removed may be particles or films, e.g., organic films such as oil, or a contaminated layer of the substrate.
  • the surface modification reaction may include cleaning the surface, curing a material, or patterning a material.
  • the radiation source may be an excimer laser.
  • the radiation source may be a solid state laser, such as a frequency-multiplied Nd.YAG laser.
  • the radiation source may be a solid state laser.
  • the radiation is optically shaped into a blade, and relative motion is induced between the optics and the surface to be processed so that the blade scans the entire surface.
  • the blade may be used to cure or bake photoresist.
  • the intensity of a pulse of radiation at the surface to be processed may be between 20 mJ/cm2 and 1000 mJ/cm2, in the case of glass preferably between 200 mJ/cm2 and 1000 mJ/cm2, in the case of ITO preferably between 400 mJ/cm2 and 1500 mJ/cm2, in the case of photoresist preferably between 100 mJ/cm2 and 800 mJ/cm2.
  • the surface to be processed or the moving fluid may be heated.
  • the surface to be processed may be a spin-on dielectric which is being cured. Then the intensity of a pulse of radiation at the surface may be between 10 mJ/cm2 and 100 mJ/cm2.
  • the surface to be processed may include polyimide which is being cured. Cleaning may be accomplished by removing a fractional thickness of the indium tin oxide layer containing contaminants. Patterning may be done using a mask to process in selected areas only. The mask may be held within 10mm of the surface, or more than 10 mm away. The flow of gas may be provided above the mask, or between the mask and the surface. The mask may be a scaled replica of the pattern to be formed on the surface. The mask may have one or more opaque objects which can be moved into and out of the beam path.
  • the surface to be patterned may be a polyimide, and the flowing gas may then include an oxidant.
  • the surface to be patterned may include a color filter layer, and then the flowing gas may include an oxidant, e.g., oxygen or ozone.
  • the surface to be patterned may be a planarization layer.
  • the beam may be split into two or more beams on the surface.
  • the moving fluid may be a liquid.
  • a sequence of surface modification processes may be performed, and the process conditions may be changed between one process and the next.
  • the advantages of the invention may include one or more of the following.
  • the surface processing has broad applicability and may include: removal of photoresist; removal of particles and organic contamination; patterning (i.e. the removal from selected areas) of various device layers such as ITO, polyimide and color filters by the use of a mask; curing of polyimide and spin-on dielectric; and removal of a thin contaminated surface layer of the ITO to reveal a better quality surface for further processing.
  • Material to be removed is ablated or otherwise activated by the radiation to cause it to react with the flowing gas, leaving only gaseous reaction products which are carried away by the gas flow.
  • Material to be modified in other ways, such as curing are activated by the radiation to effect or accelerate the desired reaction, while any unwanted byproducts produced in the reaction, such as solvent vapors, are reacted or otherwise removed by the gas flow.
  • the invention also offers opportunities for improvements in the device and the fabrication process. For example, the use of photoreactive surface processes in place of high temperature processes can enable the use of plastic substrates for the device, resulting in lower cost and greater durability. Another opportunity lies in the ability to replace costly and complex photolithographic patterning steps with photoreactive surface processes using stencil or projection masks, to dramatically reduce the cost of patterning certain device layers.
  • Figure 1 is a schematic cross section of a liquid crystal display device.
  • Figure 2 illustrates the ablation and reaction mechanism for removal of photoresist or organic contaminants.
  • Figure 3 illustrates the optical formation of a focused blade of light.
  • Figure 4 illustrates the scanning of the entire substrate surface by the beam.
  • Figure 5 illustrates the scanning process, with a stencil mask interposed between the beam and the surface.
  • Figure 6 illustrates the scanning process used to clean a surface of particles and contaminant films.
  • Figure 7 illustrates the photoreactive curing of a thin film, such as polyimide or spin-on dielectric, used in a flat panel display.
  • Figure 8 illustrates a patterned removal process where a stencil mask is held far enough from the surface to permit a flow of gas between the mask and the surface.
  • Figure 9 illustrates the use of a projection shadow mask for patterned material removal.
  • Figure 10 illustrates the use of linear masks for patterned material removal.
  • Figure 11 illustrates photoreactive surface processing where a flowing liquid is used as the reactant.
  • Figure 12 illustrates the removal of a contaminated portion of the ITO layer from a flat panel display substrate.
  • foreign material 20 on the surface of a workpiece 21 is processed to form a reaction product 26, by the combination of providing a directed flow of a fluid 24, including a reactant, in the vicinity of the foreign material, and delivering a beam of radiation 18 to aid the reactant to react with the foreign material to form the reaction product.
  • the beam may be deep ultraviolet radiation in the wavelength range from 155 nm to 405 nm.
  • the source of the radiation may be an excimer laser, for example a KrF excimer producing radiation at 248 nm wavelength, or an ArF excimer producing radiation at 193 nm wavelength.
  • the source may be a solid state laser such as a frequency-quadrupled Nd.YAG laser, producing radiation at 266 nm wavelength, a frequency-tripled Nd.YAG at 355 nm, or a frequency-tripled Alexandrite laser producing radiation with a tunable wavelength in the range 240 nm to 266 nm.
  • a high intensity ultraviolet light source may be used,such as a pulsed xenon lamp, or a high pressure mercury vapor lamp.
  • Other wavelengths of light may be present in addition to the ultraviolet light.
  • the beam from a frequency-multiplied Nd.YAG laser may combine the light of the fundamental wavelength 1064 nm and the second harmonic 532 nm along with the fourth harmonic at 266 nm wavelength.
  • the reactant may be a gas flowing at a velocity preferably between 20 mm/sec and 500 mm/sec.
  • the gas may include one or more members of the group of oxidants consisting of oxygen, fluorine and chlorine, and molecules containing oxygen, fluorine and chlorine.
  • the reactant may include an oxidant and the beam may include ultraviolet radiation.
  • the reactant may be a flowing liquid in which the workpiece is immersed.
  • the material to be removed may be spin-on dielectric, and the liquid may include a chlorine-containing species such as HC1 or NaClO.
  • the work surface 110 is covered by a layer of flowing liquid 112, including a reactant.
  • the depth of this layer may be preferably between 0.5 mm and 10 mm, and the velocity may be preferably between 10 mm/sec and 500 mm/sec.
  • the beam 112 is transmitted through the layer of flowing liquid to the work surface, where it heats, ablates or otherwise excites the foreign material 114 to react with the liquid, forming reaction products 116 which are carried off in the liquid flow.
  • a layer of spin-on dielectric was stripped from a flat panel display substrate using excimer laser pulses at 248 nm wavelength.
  • the substrate was immersed in a dilute solution of HCl (approximately 5% concentration) at a depth of 5 mm.
  • the beam was formed into a focused stripe with an energy of 4 mJ per cm of length, pulsing at a rate of 100 Hz.
  • the spin-on dielectric was removed from glass substrate with a patterned ITO layer, using a single pass at 1 mm/sec. The resulting ITO surface was free of visible residue.
  • the beam may be delivered by receiving a source laser beam 28 and focusing the cross- sectional size of the beam in one dimension by using a converging cylindrical lens 34 and broadening the cross- sectional size in the other dimension using a diverging cylindrical lens 30 to form a narrow rectangular beam 38 at the surface to be processed.
  • the size of the beam in the broadened dimension may be at least as great as the width of the substrate to be processed.
  • Other optical configurations may be used which can provide a similar narrow rectangular beam. For example, reflecting elements (i.e. cylindrical mirrors) may be used in place of one or both of the lenses.
  • a narrow rectangular beam may also be obtained by using a converging spherical lens in combination with a diverging cylindrical lens, a diverging spherical lens in combination with a converging cylindrical lens, or any of numerous other arrangements.
  • the entire surface of a flat panel display substrate 40 may be scanned by placing it on a linear translation stage or conveyor (not shown) .
  • the stage or conveyor moves the substrate in the direction 48 under the beam 42 while a flow of gas 44 containing a reactant is provided by a nozzle 46.
  • the outgoing gas flow 50 containing reaction products is drawn through an exhaust duct (not shown) and conveyed to a filter (not shown) which removes particles, reaction products and other contaminants from the gas stream before releasing or recirculating the gas.
  • the gas may be heated by heater 132 before being delivered to the surface in order to improve the efficiency of the reaction.
  • the translation stage or conveyor may also include a heating element (not shown) to raise the temperature of the substrate, for the same purpose.
  • the material to be removed may be a particle 70, or a thin film 72 of grease or other contaminant.
  • the material to be removed may alternatively be an applied film such as photoresist, polyimide or a planarization layer.
  • a layer of polyimide approximately 250 nm thick was stripped using 248 nm wavelength light pulses from a KrF excimer laser.
  • the pulses were formed into a focused stripe with an energy of 3 mJ per cm of stripe length, and pulsed at a rate of 100 Hz.
  • the substrate was scanned under the beam using two passes at a scan velocity of 4 mm/sec while a volume flow of oxygen of 50 SCFH was maintained across the substrate surface.
  • a planarization layer approximately 1 micron thick was stripped using 248 nm wavelength light pulses from a KrF excimer laser.
  • the pulses were formed into a focused stripe with an energy of 4 mJ per cm of stripe length, and pulsed at a rate of 200 Hz.
  • the substrate was scanned under the beam at a velocity of 4 mm/sec, and 8 passes were used to strip the entire thickness.
  • a flow of oxygen of 50 SCFH was maintained over the surface during scanning. These process conditions were effective at stripping the planarization layer without damaging the underlying ITO.
  • the material to be removed may include one or more of the device layers, and the material may be removed from selected areas only, leaving a patterned device layer. Patterned removal may be accomplished using a stencil mask in contact or close proximity with the surface, as illustrated in Figure 5.
  • a stencil mask 54 is interposed between the beam 60 and the substrate 52.
  • the beam and the flowing gas 64 remove material from areas 68 of the substrate which lie directly beneath open areas of the mask.
  • one such open region is beneath the beam, which has ablated a portion of the layer 58 to form a cloud 62 which reacts with the flowing gas 64 to form reaction products 66. More than one pulse may be needed to remove all of the material from an open region.
  • a layer of polyimide approximately 250 nm thick was patterned using 248 nm wavelength light pulses from a KrF excimer laser.
  • the pulses were formed into a focused stripe with an energy of 3 mJ per cm of stripe length, and pulsed at a rate of 100 Hz.
  • a single scan at a velocity of 4 mm/sec was performed with a metal stencil mask held about 0.5 mm above the surface, and a volume flow of oxygen of 50 SCFH was maintained across the surface.
  • the stencil mask 90 may be held at a sufficient height above the work surface 92 to permit a flow of gas 94 or liquid between the mask and the surface to react with the ablated material 96.
  • the stencil mask may be held at a height above the surface preferably between 0.5 and 10 mm.
  • Patterned removal may alternatively be accomplished by the use of a projection shadow mask as illustrated in Figure 9.
  • the shadow mask 98 may be placed between the beam forming optics 100 and the work surface 102, as shown in the figure. Alternatively the shadow mask may be placed in other locations along the beam path.
  • the shadow mask includes areas transparent to the beam and areas opaque to the beam.
  • the opaque areas may preferably be formed from a thin film of a material resistant to ablation, such as copper or aluminum.
  • the pattern of transparent and opaque areas on the mask may be a scaled version of the desired pattern on the work surface, and linear motion may be induced between the mask and the beam which is synchronized with the motion of the flat panel display substrate.
  • the scale factor for the mask pattern along the long dimension of the beam may be different from the scale factor along the short dimension.
  • patterned removal may alternatively be accomplished by the use of one or more linear masks 106 which may be moved in and out of the beam 108 as the substrate is scanned under the beam.
  • a linear mask as shown in the insert in figure 10, is a comb-shaped object consisting of a bar approximately the same length as the beam, and projections which block portions of the beam. By positioning such a linear mask, the material to be removed may be removed along the entire width of the beam (retracted mask) , or removed from selected areas (mask extended into beam) .
  • a linear mask may include more than one pattern, so that the pattern of material removal may be changed according to the position of the mask. Linear masks may be an efficient patterning method for layers with highly repetitive patterns, such as color filters.
  • Photoreactive processing may also be used to cure thin films of materials such as polyimide, photoresist and spin-on dielectrics. Curing does not remove the film but changes its properties by causing chemical reactions within the layer, typically cross-linking of a polymer.
  • a film 78 of material to be cured on a substrate 74 is conveyed in direction 76 beneath a beam 60 in the presence of flowing gas 64. The beam initiates chemical reactions in the illuminated portion 80 of the film, resulting in a film 82 with changed physical and chemical properties.
  • Some species 84 such as water vapor, organic solvents and other organic molecules, may be ejected from the surface during this process, and are carried off by the outgoing gas flow 66.
  • Photoreactive surface processing may be used to remove a fraction of the thickness of the ITO conductor layer, as shown in Figure 12. This may be useful in preparing the substrate for further processing steps in cases where a portion of the ITO layer is contaminated.
  • the beam 120 is formed in such a way that a pulse has insufficient intensity to remove the entire ITO layer 122.
  • the flowing gas 124 (alternatively, a liquid may be used) contains species such as hydrogen, chlorine or fluorine, or molecules containing hydrogen, chlorine or fluorine, which will react with the ITO layer where it is illuminated by the beam.
  • the contaminated portion 126 of the ITO layer is removed, leaving a clean surface 128 for further processing.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Procédé de traitement de la surface de substrats d'affichage à écran plat au niveau de différents points pendant la fabrication. Ce traitement est nécessaire, par exemple, pour enlever la résine photosensible après une étape de photolithographie. Il est également nécessaire de nettoyer les substrats en verre au commencement du processus de fabrication. Ce procédé permet d'appliquer des motifs sur certaines couches du dispositif, par exemple des filtres colorés et des couches d'alignement en polyimide, au moyen d'un masque (54) pendant le traitement de surface. On balaye la surface à traiter (21) au moyen d'un faisceau de rayonnement pulsé à intensité élevée, tout en laissant s'écouler un gaz réactif (24) sur la surface où le faisceau est incident. Dans un processus de nettoyage ou de suppression de matériau, le faisceau de rayonnement (18) provoque la réaction du matériau avec le gaz, ce qui génère des produits gazeux (26) qu'on éloigne de la surface par aspiration. Dans un processus de durcissement, par exemple de diélectrique comportant des couches de résine appliquée par centrifugation ou de polyimide, le faisceau de rayonnement (60) provoque la réticulation du polymère, tandis que le flux de gaz (64) contribue à la réaction et à la suppression de produits libérés par le processus de réticulation. On peut procéder au traitement d'un substrat (74) par translation dudit substrat (74) sous un faisceau (60) plus grand que la largeur du substrat. On peut réaliser ce traitement au moyen de balayages multiples de la surface ou d'un balayage par faisceaux multiples.
PCT/US1995/011002 1994-08-29 1995-08-29 Traitement de modification de surfaces de substrats de dispositifs a ecran plat WO1996006694A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP95931020A EP0802835A1 (fr) 1994-08-29 1995-08-29 Traitement de modification de surfaces de substrats de dispositifs a ecran plat
JP8508946A JPH10506201A (ja) 1994-08-29 1995-08-29 フラットパネルデバイス基板の表面処理方法
AU34608/95A AU3460895A (en) 1994-08-29 1995-08-29 Surface modification processing of flat panel device substrates

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US29802394A 1994-08-29 1994-08-29
US42866795A 1995-04-25 1995-04-25
US08/428,667 1995-04-25
US08/298,023 1995-04-25

Publications (1)

Publication Number Publication Date
WO1996006694A1 true WO1996006694A1 (fr) 1996-03-07

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PCT/US1995/011002 WO1996006694A1 (fr) 1994-08-29 1995-08-29 Traitement de modification de surfaces de substrats de dispositifs a ecran plat

Country Status (4)

Country Link
EP (1) EP0802835A1 (fr)
JP (1) JPH10506201A (fr)
AU (1) AU3460895A (fr)
WO (1) WO1996006694A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004101214A3 (fr) * 2003-05-13 2004-12-29 Hewlett Packard Development Co Systemes de micro-usinage laser
WO2007019287A3 (fr) * 2005-08-04 2008-01-10 Uvtech Sys Inc Enlevement photoreactif d'une resine implantee par ions
US7514015B2 (en) 2004-06-17 2009-04-07 Uvtech Systems Method for surface cleaning

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3853690B2 (ja) * 2002-04-10 2006-12-06 財団法人レーザー技術総合研究所 フォトレジスト剥離除去方法
KR101174777B1 (ko) 2005-12-27 2012-08-20 엘지디스플레이 주식회사 패턴형성방법 및 그를 이용한 액정표시소자 제조방법
US7993464B2 (en) * 2007-08-09 2011-08-09 Rave, Llc Apparatus and method for indirect surface cleaning
JP2010040567A (ja) * 2008-07-31 2010-02-18 Tokyo Electron Ltd 酸化膜表面の洗浄及び保護方法および酸化膜表面の洗浄及び保護装置

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US3890176A (en) * 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US4414059A (en) * 1982-12-09 1983-11-08 International Business Machines Corporation Far UV patterning of resist materials
US4508749A (en) * 1983-12-27 1985-04-02 International Business Machines Corporation Patterning of polyimide films with ultraviolet light
US4568632A (en) * 1982-10-07 1986-02-04 International Business Machines Corporation Patterning of polyimide films with far ultraviolet light
US4946763A (en) * 1987-05-15 1990-08-07 Stork Screens B.V. Method for providing a design pattern on a metal stencil and metal stencil having a patternable covering layer
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5114834A (en) * 1987-10-23 1992-05-19 Yehuda Nachshon Photoresist removal
US5151134A (en) * 1989-01-17 1992-09-29 Agence Regionale De Developpements Technologiques Method and a device for cleaning a surface with a laser
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US3890176A (en) * 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US4568632A (en) * 1982-10-07 1986-02-04 International Business Machines Corporation Patterning of polyimide films with far ultraviolet light
US4414059A (en) * 1982-12-09 1983-11-08 International Business Machines Corporation Far UV patterning of resist materials
US4508749A (en) * 1983-12-27 1985-04-02 International Business Machines Corporation Patterning of polyimide films with ultraviolet light
US4946763A (en) * 1987-05-15 1990-08-07 Stork Screens B.V. Method for providing a design pattern on a metal stencil and metal stencil having a patternable covering layer
US5114834A (en) * 1987-10-23 1992-05-19 Yehuda Nachshon Photoresist removal
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5151134A (en) * 1989-01-17 1992-09-29 Agence Regionale De Developpements Technologiques Method and a device for cleaning a surface with a laser
US5151135A (en) * 1989-09-15 1992-09-29 Amoco Corporation Method for cleaning surfaces using UV lasers

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U.S. ARMY ELECTRONICS TECHNOLOGY AND DEVICES LABORATORY, January 1992, JOHN R. VIG, "Ultraviolet - Ozone Cleaning of Semiconductor Surfaces", pages 1, 9, 12-15, 19-23, 27-28. *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004101214A3 (fr) * 2003-05-13 2004-12-29 Hewlett Packard Development Co Systemes de micro-usinage laser
US6969822B2 (en) 2003-05-13 2005-11-29 Hewlett-Packard Development Company, L.P. Laser micromachining systems
US7514015B2 (en) 2004-06-17 2009-04-07 Uvtech Systems Method for surface cleaning
WO2007019287A3 (fr) * 2005-08-04 2008-01-10 Uvtech Sys Inc Enlevement photoreactif d'une resine implantee par ions

Also Published As

Publication number Publication date
EP0802835A4 (fr) 1997-11-19
AU3460895A (en) 1996-03-22
EP0802835A1 (fr) 1997-10-29
JPH10506201A (ja) 1998-06-16

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