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WO1996013621A1 - Source de plasma a resonance cyclotronique des electrons - Google Patents

Source de plasma a resonance cyclotronique des electrons Download PDF

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Publication number
WO1996013621A1
WO1996013621A1 PCT/US1995/011648 US9511648W WO9613621A1 WO 1996013621 A1 WO1996013621 A1 WO 1996013621A1 US 9511648 W US9511648 W US 9511648W WO 9613621 A1 WO9613621 A1 WO 9613621A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
plasma
producing device
plasma producing
ecr
Prior art date
Application number
PCT/US1995/011648
Other languages
English (en)
Inventor
Ole D. Krogh
Herbert J. Sawin
Original Assignee
Krogh Ole D
Sawin Herbert J
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/331,916 external-priority patent/US5453125A/en
Application filed by Krogh Ole D, Sawin Herbert J filed Critical Krogh Ole D
Publication of WO1996013621A1 publication Critical patent/WO1996013621A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/085—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields
    • B01J2219/0852—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields employing permanent magnets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma

Definitions

  • the present invention is a device used to generate a gaseous plasma in which an oscillating electromagnetic field ionizes neutral species in the gas phase to form ions and electrons, excites neutral species to form electronically excited atoms and molecules, and dissociates molecules to form atoms and radicals.
  • Industrial plasma processing involves the exposure of a workpiece to the plasma effluents in order to remove material from the substrate surface (etching), grow material on the substrate surface (deposition), chemically alter the surface (plasma oxidation, nitration, surface cleaning and passivation), physically modify the surface (surface roughing or smoothing), or generally modify the conditions on the surface or in the body of the workpiece (e.g. plasma sterilization).
  • Plasmas and plasma sources are characterized and differentiated not only by the density of charged particles in the resulting plasma but in addition by the frequency of the generating electromagnetic field and by the range of gas pressure or vacuum suitable for its operation. The following review of prior art is limited to the technology associated with plasmas generated by microwaves of frequency 2.45 GHz.
  • ECR electron cyclotron resonance
  • the spacial arrangement In addition to the matching of frequencies the spacial arrangement must be such that the electrical vector of the electromagnetic field is in the plane of gyration. This is the case when the microwave propagation is parallel with the magnetic field lines. With the microwave propagation perpendicular to the magnetic field lines resonance is spatially restricted but in reality the resonance zone is broadened by collisional scattering of the electrons as well as by the Doppler effect associated with the velocity of electrons.
  • the ECR condition is characterized by a drastically increased microwave power absorption by the plasma electrons resulting in much higher densities of charged particles and a much greater degree of dissociation in an ECR plasma than in a microwave plasma without the auxiliary magnetic field.
  • Electromagnets In practice, the necessary magnetic field can be produced either by an electromagnet or by a permanent magnet. By far the most common has been to use electromagnets. These magnets are usually in the shape of a solenoid which encloses the process chamber or part of the chamber, the plasma generating subchamber. In order to achieve adequate control of the shape of the magnetic field two or even three solenoid coils are used. This is exemplified by U.S. Patent Nos.
  • Permanent magnets have been used in .order to avoid the costly disadvantages of electromagnets. The problem now becomes one of placing the magnets sufficiently close to the plasma and the workpiece considering the rapid decay of the magnetic field strength with the distance from the magnet surface.
  • U.S. Patent No. 4,433,228 the permanent magnet is placed in the microwave waveguide itself. While this arrangement brings the magnet very close to the workpiece it necessitates that the microwaves pass through the magnetic material thereby limiting the microwave power that can be applied in order to avoid destroying the magnet by the generated heat.
  • the electromagnetic field of the microwave is perturbed by passage through the magnetic material. This disadvantage is avoided in U.S. Patent No.
  • Patent No. 5,032,205 permanent magnets provide the necessary magnetic field for ECR operation and the plasma source is an RF electrode in the chamber itself.
  • a similar setup is described in U.S. Patent No. 4,745,337, where the in-chamber electrodes are microwave antennas.
  • Remote processing here designates treatment of a substrate located outside the plasma excitation region in a separate, downstream processing chamber as opposed to and distinct from the in situ plasma generation chamber.
  • a substrate is moved from a sputtering zone with an inert atmosphere, where the substrate is coated with a metal or metal alloy, to a reaction zone with a reactive and/or activated atmosphere, where the sputtered material is chemically altered to form the final film.
  • the sputter zone is separated from the reaction zone by either physical means, as in U.S. Patent No. 4,420,385, or by formation of concentration gradients of the proper chemicals, as in U.S. Patent No. 4,851,095.
  • Remote plasma activation of the gases flowing to the reaction zone is expected to accelerate the conversion of the sputtered film to the final, optically transparent film.
  • the application of the present invention for gas abatement involves location of the plasma source downstream from a processing chamber.
  • the gas molecules in the effluent of the processing chamber are dissociated by electron impact collisions in the plasma, and suitable reaction partners for the molecular fragments can be added either just before or right after passage through the plasma source.
  • the functional pressure range is very wide, spanning from a fraction of a millitorr to tens of torr.
  • the ECR functionality extends the range to the lowest pressures, and at pressures above 1 to 10 torr the magnets have no effect and the source functions as an ordinary microwave source. If necessary, the re-ignition of the plasma could be further facilitated by a UV radiation source or other means.
  • the present invention includes a plasma chamber into which the microwave energy from a magnetron is coupled by an antenna rod or through a microwave transparent window.
  • the magnetic field necessary for ECR plasma conditions is provided by blocks of permanent magnets located outside the chamber itself and arranged around the chamber in different embodiments of the invention. Entrance and exit ports for a gas or gas mixture are located on the remaining unencumbered chamber sides such that gas molecules are forced to pass through or near the ECR surface in order to travel from entrance to exit port.
  • the source chamber is intended to be coupled to the upstream side of a process chamber holding a workpiece such that the plasma activated effluent flows from the source chamber to the process chamber in order to modify the workpiece chemically or physically.
  • the source chamber is intended to be coupled to the downstream side of a process chamber in which the gases to be abated are used or produced. The effluent from the process chamber will then flow through the source chamber where abatement will take place.
  • FIG. 1 is a side view of the vertical cross section according to the present invention.
  • the microwave waveguide is coupled to the plasma chamber through an antenna rod.
  • FIG. la is a side view of the vertical cross section according to the present invention.
  • the microwave waveguide is coupled to the plasma chamber through a microwave transparent window.
  • FIG. 2 is a side view of the vertical cross section of an alternative arrangement of the present invention.
  • the microwave waveguide is coupled to the plasma chamber through an antenna rod.
  • FIG. 3 is a side view of the vertical cross section of a further alternative arrangement of the present invention.
  • the microwave waveguide is coupled to the plasma chamber through an antenna rod.
  • FIG. 3 a is a cross-sectional view from the top of the chamber shown from the side in FIG. 3.
  • FIG. 4 is a side view of the vertical cross section of an alternative embodiment in which the antenna pass all the way through the chamber.
  • FIGS. 5a-c are cross-sectional views from the top of the chamber shown from the side in FIG.4 illustrating three different arrangements of magnets external to the chamber.
  • FIG. 6 is a side view of an arrangement in which a tubular magnetic field containing the antenna rod is created by a set of magnetic rings external to the chamber.
  • FIG. 7 is a block diagram illustrating the application of the present invention as a plasma source for remote processing.
  • FIG. 8 is a block diagram illustrating the application of the present invention for gas abatement.
  • the present invention is an ECR plasma source for remote processing or for gas abatement and is illustrated in FIG. 1. It involves a vacuum chamber 1, an antenna rod 2, a waveguide 3 for microwaves, a permanent magnet or composite magnet block 4, chamber cooling means 5, magnet cooling means 6, and entrance 7 and exit 8 ports for gas or gas mixture.
  • the plasma chamber 1 has a cylindrical sidewall 9 which is made hollow to accommodate cooling liquid constantly flowing through chamber cooling means 5 and magnet cooling means 6.
  • the chamber 1 is constructed of non-ferromagnetic metallic material or quartz, and made to tolerate total evacuation of the chamber.
  • the antenna rod 2 is made of inert material like stainless steel and is hollow to allow water cooling.
  • a magnet or magnet pack 4 designed such that the magnetic field lines are perpendicular to the bottom of the chamber 1 as shown by arrows 12 and of such strength that the decaying field drops to about 875 Gauss in a plane near the middle of the chamber and parallel to the top and bottom, and the surface so defined is often referred to as the ECR resonance surface.
  • the magnet pack 4 is protected from excessive heating by the plasma by having the wall between plasma chamber and magnet pack hollow to accommodate cooling liquid the same way as described for the sidewall.
  • the interior surfaces of the chamber are coated with a hard, wear resistant and inert coating the nature of which depends on the chemical system used in the plasma.
  • the coating is designed to protect the chamber from chemical and physical attack by the plasma activated species and to minimize the deactivation and recombination of these species on the walls of the chamber.
  • the permanent magnet 4 is positioned below the chamber 1 with its N-S poles aligned with the propagation of the microwave field coupled into the chamber 1 by the antenna 2 and shown by arrows 11. This geometry assures that the center magnetic field line is at right angle to the electric field associated with the microwaves.
  • the plasma source is operated by introduction of a gas or gas mixture through entrance port 7 or a plurality of such ports, and the inlet flow and exit flow through port 8 is adjusted so as to keep the total pressure sufficiently reduced in order to limit collisional scattering of the gyrating electrons by neutrals, preferably below about 1 torr.
  • the nature of the gas or gas mixture depends on the mode of application of the plasma source. For the purpose of remote processing in a downstream chamber the choice of gases is entirely determined by the chemistry and nature of the downstream activity.
  • the effluent mixture entering through port 7 will in part consist of unreacted PFC's and in part of other gas additives and reaction products specific to the upstream activity.
  • reaction partners e.g. oxygen and hydrogen
  • suitable reaction partners e.g. oxygen and hydrogen
  • the microwave power supply (not shown) generates microwaves which travel down the waveguide 3 and are coupled to the plasma by the -11- antenna rod 2.
  • the resulting microwave plasma electrons are accelerated by the electrical component of the electromagnetic field which oscillates in a plane perpendicular to the direction of propagation.
  • a magnetic field electrons gyrate around the magnetic field lines with a rotational frequency determined by and proportional with the strength of the magnetic field.
  • the plane of rotation is perpendicular to the magnetic field lines.
  • the microwave field propagates radially from the antenna and it becomes possible for its electrical component to cooperate with the magnetic field in the acceleration of electrons where the plane of gyration coincides spacially with the electrical vector of the microwave field. While the microwave frequency here is fixed at 2.45 GHz the magnetic field strength and therefore the gyration frequency decays monotonously with the distance from the magnet surface.
  • ECR electron cyclotron resonance
  • Adjusting spacers 13 are placed between the magnet pack 4 and the plasma chamber 1 in order to be able to vary the spacial distance between the chamber and the magnet. By adjusting this distance, the precise location of the ECR resonance surface can be varied.
  • the teflon sleeve 14 allows the antenna rod 2 to couple the microwave energy in the waveguide 3 to the plasma chamber 1; yet, the vacuum integrity of the plasma chamber is maintained.
  • the waveguide recess 15 is dimensioned such as to maximize the transfer of microwave energy from the waveguide to the antenna rod.
  • the waveguide flange 17 facilitates the interface to microwave power supply and associated tuning equipment.
  • Flange 16 on the plasma chamber is provided to make a vacuum seal between the top lid 18 and the chamber side wall 9.
  • ions and electrons are considered a necessary feature of operation of no consequence to the workpiece as the lifetime of these species under all operating conditions is too short to allow transport form the plasma chamber 1 to any process chamber. Electrons and ions are eliminated by recombination on surfaces largely before exit from the source chamber and this results in generation of a large amount of heat. Thus, efficient cooling of the chamber and magnet is necessary. Atoms and radicals in their electronic ground states have much longer lifetimes than electrons and ions and some electronically excited neutrals likewise can be quite stable, sometimes labeled metastable species. Generally, the lifetime or stability depends on experimental conditions such as gas pressure and nature of gas phase collision partners as well as the dimensions and interior surface of the container.
  • the plasma activated species can survive the transport from the source chamber to the process chamber to reach the workpiece and modify it as intended.
  • the inlet port 7 is located below the ECR resonance surface, then the exit port 8 is located above the ECR resonance surface, and vice versa.
  • FIG. la The arrangement shown in FIG. la is different from FIG. 1 only in the way the microwave field is coupled to the plasma.
  • the top wall of the chamber 1 is flat and entirely or in part occupied by the microwave window 27 made of microwave transparent material like quartz or aluminum oxide.
  • the window 27 is vacuum sealed to the chamber 1 with a metal o-ring 10 in order to permit evacuation of the chamber, to prevent leakage of radiation, and to withstand the plasma generated heat.
  • the waveguide 3 has in the absence of an antenna rod a different shape but the same function.
  • An alternative location of the permanent magnet 4 is shown in FIG. 2, where the magnet is placed between the waveguide 3 and the plasma chamber 1.
  • the wafer cooling means 6 has been extended to the top lid, and the labeling is otherwise identical to FIG. 1.
  • This arrangement has the advantage of a so-called high-field launch of the microwave energy. This is achieved by the antenna rod extending to the center of the chamber through a volume now with a magnetic field higher than the resonance value of 875 Gauss. In FIG. 1 the field in this volume was lower than the resonance field and that condition impedes the power absorption in the plasma.
  • permanent magnets 4 are placed parallel to the antenna rod 2 on either side of the plasma chamber 1.
  • Soft iron backing 19 can be placed on the magnets in order to "shorten” the external magnetic field lines and thereby increase the field between the magnets 4, i.e. in the plasma chamber 1.
  • the use of a highly permeable material like soft iron for backing of the magnets can be applied to any of the embodiments described for this invention.
  • the magnets 4 are oriented such that a north pole on one magnet faces a south pole on the other resulting in a magnetic field across the chamber 1 and perpendicular to the antenna rod 2. In this geometry the plane of gyration of electrons around the magnetic field lines is perpendicular to the radial electrical component of the microwave field from the antenna.
  • FIG. 3 has the advantage of making it possible to maintain optimal conditions for transfer of microwave power between the antenna rod and the plasma over the entire length of the antenna.
  • Two alternative positions of the antenna rod are shown in FIG. 3 a: center location, 2 a, or off-center location, 2 b.
  • the dotted curves illustrate a possible location of the ECR resonance surfaces.
  • the off-center location of the antenna, 2 b establishes a high- field launch as the antenna is located between a magnet and its ECR resonance surface.
  • the charged particles generated at the antenna will flow downstream in the magnetic field towards the center of the chamber and the plasma will fill the entire chamber volume more completely than with the antenna in the center position.
  • the antenna exciting the plasma can also pass entirely through the chamber and be connected to the bottom chamber wall rather than terminating inside the plasma chamber. This allows the flow of coolant through a tubular antenna with the antenna being electrically grounded in both ends.
  • the length of the antenna in this and other embodiments can be adjusted so as to set up a resonance standing wave before the plasma is struck.
  • the resonance standing wave condition allows high electrical fields to build up, thereby facilitating the breakdown of the gas and forming a plasma without other means of initiation.
  • FIGS. 5 a-c are illustrations of three different arrangements of external magnets 4 and can be applied to the chamber shown in either FIG. 3 or FIG. 4.
  • the radial spokes indicate the electrical field emanating from the antenna rod 2 towards the chamber wall 9.
  • two magnets 4 are placed on opposite sides of the chamber/antenna assembly such that a north pole on one magnet faces a south pole on the other magnet resulting in a magnetic field across the chamber and perpendicular to the antenna rod 2.
  • each magnet has been split into two while retaining the geometry of the pole orientation resulting in a magnetic field in the chamber which can be more advantageous for the abatement efficiency.
  • FIG. 5c the same four magnets have been arranged in an pole orientation which alternates the north/south polarity around the perimeter of the tube to form the tubing equivalent of the classical magnetic bucket arrangement.
  • FIG. 6 is a side view of an arrangement in which a tubular magnetic field containing the antenna rod is created by a set of magnetic rings external to the chamber.
  • the magnetic or magnetized rings 4 are of alternating north/south polarity of sufficient magnetic strength and placed with appropriate spacing along the entire length of the chamber (i.e. not necessarily limited to four rings as shown in FIG. 6) to form a bevelled ECR surface around the antenna rod 2.
  • the outline of the chamber is indicated by the dotted line 9a.
  • the practice of remote processing involves not only a plasma source such as the present invention described in FIGURES 1 through 6, but in addition a process chamber 20, containing a workpiece or substrate 21, and a vacuum pump 23 which is capable of reducing the pressure in both the source chamber 1 and the process chamber 20 to at least lxl 0 "4 torr.
  • the source chamber 1 is operatively connected to the process chamber 20 through the gas exit port 8
  • the process chamber 20 is operatively connected the the vacuum pump 23 by the gas conduit 22, which can be located opposite and below port 8.
  • a working feedgas or gas mixture is introduced to the source chamber 1 through gas entrance 7.
  • the gas effluent is transported from the source chamber 1 to the process chamber 20 through the exit port 8 to act on the workpiece or substrate 21.
  • the effluent is exhausted to the vacuum pump 23 through the gas conduit 22.
  • all interior surfaces in the process chamber 20 and the conduits 8 and 22 are coated with a hard, inert coating designed to protect the surfaces from chemical attack and to minimize loss of plasma activated species by deactivation or recombination on the surfaces.
  • the practice of gas abatement involves a process chamber 20 in which in one embodiment a workpiece 21 is exposed to a gas or gas mixture. In another embodiment the process chamber 20 is exposed to a gas or gas mixture for the purpose of cleaning the interior of the process chamber while no workpiece is in place. In either embodiment the effluent from the process chamber
  • reaction partners for the abatement process taking place in the plasma source 1 can be added upstream from the source through the conduit 24 or immediately downstream from the source through the conduit 25.
  • a solid reaction partner such as silicon or silicon dioxide can be located in place of the conduits 24 or 25.
  • a working feedgas or gas mixture is introduced to the process chamber 20 through gas entrance port 26 and exposed to a workpiece 21.
  • the effluent from the process chamber 20, consisting now of process reaction products and unreacted feedgas, is pulled through conduit 7 to the plasma source 1 by the vacuum pump 23.
  • This effluent from the process chamber 20 can be mixed with an appropriate reaction partner added through conduit 25.
  • the abatement process is facilitated by the intense plasma in the source chamber 1, and the abated gas mixture is pumped out through the conduit 8, possibly after addition of alternative reaction partners through conduit 25.
  • the magnetic field is not associated with any heat generation and no cooling is necessary other than protection of the magnet from other heat sources (i.e. the plasma).
  • the permanency of the magnetic field assures reproducibility of processing and this is considered a very valuable characteristic of this source.
  • the functional pressure range is very wide, spanning from a fraction of a millitorr to tens of torr.
  • ECR plasma sources have in the past most commonly been used for in situ processing of a workpiece, and these sources have been considered too costly to use for remote processing as disclosed here.
  • the cost, bulk, and complexity of alternative sources explain the scarcity of prior art in the field of remote plasma processing and would suggest widespread application of the present invention in the technology areas of semiconductors, superconductors, optical thin films, plasma sterilization, and gas abatement.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
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Abstract

L'invention se rapporte à un appareil fonctionnant comme une source de plasma pour la réduction des gaz, qui permet de convertir l'effluent toxique ou dangereux pour l'environnement provenant d'une chambre de traitement (1) en produits stables et sans danger. Une autre application de l'invention est l'utilisation de la source de plasma pour un traitement en aval, dans lequel on agit sur un substrat en y déposant une couche mince, en attaquant chimiquement la surface du substrat, ou en effectuant toute autre modification de la surface. Le plasma est produit dans un gaz par un champ magnétique et une énergie hyperfréquence en mode ECR. Le champ des hyperfréquences est couplé à la chambre de gaz (1) par une tige d'antenne (2) ou à travers une fenêtre (27) transparente aux hyperfréquences. Des aimants permanents (4) sont placés de chaque côté de la chambre, vis-à-vis de l'entrée du champ des hyperfréquences ou le long des côtés de la chambre, ou encore le champ magnétique est généré par des anneaux magnétiques placés sur toute la longueur de la chambre. Ceci accroît l'aptitude des électrons de plasma à absorber la puissance tout en augmentant la densité des électrons dans le plasma par confinement magnétique, ce qui permet d'éviter une perte excessive d'électrons à travers les parois de la chambre. Des gaz produits lors du traitement peuvent être ajoutés immédiatement avant ou immédiatement après le passage à travers la source de plasma.
PCT/US1995/011648 1994-10-31 1995-09-18 Source de plasma a resonance cyclotronique des electrons WO1996013621A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/331,916 1994-10-31
US08/331,916 US5453125A (en) 1994-02-17 1994-10-31 ECR plasma source for gas abatement
US52928995A 1995-09-15 1995-09-15
US08/529,289 1995-09-15

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WO1996013621A1 true WO1996013621A1 (fr) 1996-05-09

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1150330A3 (fr) * 2000-04-26 2004-12-29 Axcelis Technologies, Inc. Plaque de distribution activement refroidie pour réduire la température des gaz réactifs dans un système de traitement par plasma
WO2007048993A3 (fr) * 2005-10-28 2007-08-16 Boc Group Plc Dispositif de reduction des gaz a effet de serre par solution plasma
WO2008017304A3 (fr) * 2006-08-09 2008-04-03 Roth & Rau Ag Source de plasma ecr
KR100852796B1 (ko) * 1996-09-16 2008-08-18 에이케이티 가부시키가이샤 고전력 원격 여기원을 사용하는 증착 챔버의 세정 방법 및증착 장치 조립체
WO2011072804A1 (fr) * 2009-12-14 2011-06-23 Eni S.P.A. Procédé de réduction de la viscosité des pétroles bruts
US9044707B2 (en) 2005-11-24 2015-06-02 Edwards Limited Microwave plasma abatement apparatus
US9374853B2 (en) 2013-02-08 2016-06-21 Letourneau University Method for joining two dissimilar materials and a microwave system for accomplishing the same

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KR100852796B1 (ko) * 1996-09-16 2008-08-18 에이케이티 가부시키가이샤 고전력 원격 여기원을 사용하는 증착 챔버의 세정 방법 및증착 장치 조립체
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EP1150330A3 (fr) * 2000-04-26 2004-12-29 Axcelis Technologies, Inc. Plaque de distribution activement refroidie pour réduire la température des gaz réactifs dans un système de traitement par plasma
WO2007048993A3 (fr) * 2005-10-28 2007-08-16 Boc Group Plc Dispositif de reduction des gaz a effet de serre par solution plasma
JP2009514205A (ja) * 2005-10-28 2009-04-02 エドワーズ リミテッド プラズマ除害デバイス
US9333460B2 (en) 2005-10-28 2016-05-10 Edwards Limited Plasma treatment device
CN101296745B (zh) * 2005-10-28 2011-10-05 爱德华兹有限公司 等离子消减装置
KR101320251B1 (ko) * 2005-10-28 2013-10-22 에드워즈 리미티드 플라즈마 저감 장치
TWI417931B (zh) * 2005-10-28 2013-12-01 Edwards Ltd 電漿清除設備
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WO2008017304A3 (fr) * 2006-08-09 2008-04-03 Roth & Rau Ag Source de plasma ecr
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US9374853B2 (en) 2013-02-08 2016-06-21 Letourneau University Method for joining two dissimilar materials and a microwave system for accomplishing the same

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