WO1996017377B1 - Tranche besoi et procede permettant d'eliminer le bord externe de ladite tranche - Google Patents
Tranche besoi et procede permettant d'eliminer le bord externe de ladite trancheInfo
- Publication number
- WO1996017377B1 WO1996017377B1 PCT/US1995/014914 US9514914W WO9617377B1 WO 1996017377 B1 WO1996017377 B1 WO 1996017377B1 US 9514914 W US9514914 W US 9514914W WO 9617377 B1 WO9617377 B1 WO 9617377B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- wafer
- handle wafer
- periphery
- device layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 15
- 230000000873 masking effect Effects 0.000 claims abstract 3
- 238000007517 polishing process Methods 0.000 claims 1
Abstract
Procédé permettant d'éliminer le bord externe d'une tranche BESOI collée. Ladite tranche comporte une tranche de manipulation, une couche d'oxyde sur une surface de la tranche de manipulation, une couche de composant collée à la couche d'oxyde et une couche p+ d'arrêt d'attaque sur la couche de composant ayant une surface exposée. Ledit procédé consiste à masquer la face exposée de la couche p+ d'arrêt d'attaque, et à procéder à l'abrasion de la périphérie de la tranche BESOI pour enlever les marges périphériques de la couche p+ d'arrêt d'attaque et de la couche de composant.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95941409A EP0744082A4 (fr) | 1994-11-30 | 1995-11-16 | Tranche besoi et procede permettant d'eliminer le bord externe de ladite tranche |
JP8518846A JPH09509015A (ja) | 1994-11-30 | 1995-11-16 | Besoiウエハおよびその外縁の剥離方法 |
KR1019960704030A KR970700933A (ko) | 1994-11-30 | 1996-07-25 | Besoi 웨이퍼와 그 외부 에지를 스트립하는 방법(besoi wafer and process for stripping outer edge thereof) |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/346,695 US5668045A (en) | 1994-11-30 | 1994-11-30 | Process for stripping outer edge of BESOI wafers |
US08/346,695 | 1994-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1996017377A1 WO1996017377A1 (fr) | 1996-06-06 |
WO1996017377B1 true WO1996017377B1 (fr) | 1996-08-08 |
Family
ID=23360629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1995/014914 WO1996017377A1 (fr) | 1994-11-30 | 1995-11-16 | Tranche besoi et procede permettant d'eliminer le bord externe de ladite tranche |
Country Status (5)
Country | Link |
---|---|
US (2) | US5668045A (fr) |
EP (1) | EP0744082A4 (fr) |
JP (1) | JPH09509015A (fr) |
KR (1) | KR970700933A (fr) |
WO (1) | WO1996017377A1 (fr) |
Families Citing this family (45)
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US6555396B1 (en) * | 2000-03-23 | 2003-04-29 | Advanced Micro Devices, Inc. | Method and apparatus for enhancing endpoint detection of a via etch |
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FR2860842B1 (fr) * | 2003-10-14 | 2007-11-02 | Tracit Technologies | Procede de preparation et d'assemblage de substrats |
JP2006173354A (ja) * | 2004-12-15 | 2006-06-29 | Canon Inc | Soi基板の製造方法 |
FR2880184B1 (fr) | 2004-12-28 | 2007-03-30 | Commissariat Energie Atomique | Procede de detourage d'une structure obtenue par assemblage de deux plaques |
EP1994562A1 (fr) * | 2006-01-31 | 2008-11-26 | MEMC Electronic Materials, Inc. | Tranche a semi-conducteur a haute conductivite thermique |
FR2899594A1 (fr) * | 2006-04-10 | 2007-10-12 | Commissariat Energie Atomique | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
EP2015354A1 (fr) * | 2007-07-11 | 2009-01-14 | S.O.I.Tec Silicon on Insulator Technologies | Procédé pour le recyclage d'un substrat, procédé de fabrication de tranches stratifiées et substrat donneur recyclé approprié |
US20090242126A1 (en) * | 2008-03-31 | 2009-10-01 | Memc Electronic Materials, Inc. | Edge etching apparatus for etching the edge of a silicon wafer |
JP4951580B2 (ja) * | 2008-04-21 | 2012-06-13 | ラピスセミコンダクタ株式会社 | 半導体ウエハの製造方法 |
FR2935536B1 (fr) * | 2008-09-02 | 2010-09-24 | Soitec Silicon On Insulator | Procede de detourage progressif |
WO2010059556A1 (fr) * | 2008-11-19 | 2010-05-27 | Memc Electronic Materials, Inc. | Procédé et système de décapage du bord d'une tranche de semi-conducteur |
RU2011124916A (ru) * | 2008-11-20 | 2012-12-27 | Шарп Кабусики Кайся | Полупроводниковый слой и способ его формирования |
JP5564785B2 (ja) * | 2008-12-08 | 2014-08-06 | 株式会社Sumco | 貼り合わせ基板の製造方法 |
EP2200077B1 (fr) * | 2008-12-22 | 2012-12-05 | Soitec | Procédé pour la liaison de deux substrats |
JP5384313B2 (ja) * | 2008-12-24 | 2014-01-08 | 日本碍子株式会社 | 複合基板の製造方法及び複合基板 |
US8173518B2 (en) * | 2009-03-31 | 2012-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of wafer bonding |
US8476165B2 (en) * | 2009-04-01 | 2013-07-02 | Tokyo Electron Limited | Method for thinning a bonding wafer |
FR2950734B1 (fr) * | 2009-09-28 | 2011-12-09 | Soitec Silicon On Insulator | Procede de collage et de transfert d'une couche |
FR2957189B1 (fr) * | 2010-03-02 | 2012-04-27 | Soitec Silicon On Insulator | Procede de realisation d'une structure multicouche avec detourage post meulage. |
FR2961630B1 (fr) | 2010-06-22 | 2013-03-29 | Soitec Silicon On Insulator Technologies | Appareil de fabrication de dispositifs semi-conducteurs |
US20120028439A1 (en) * | 2010-07-30 | 2012-02-02 | Memc Electronic Materials, Inc. | Semiconductor And Solar Wafers And Method For Processing Same |
US8310031B2 (en) | 2010-07-30 | 2012-11-13 | Memc Electronic Materials, Inc. | Semiconductor and solar wafers |
US8338266B2 (en) | 2010-08-11 | 2012-12-25 | Soitec | Method for molecular adhesion bonding at low pressure |
FR2964193A1 (fr) | 2010-08-24 | 2012-03-02 | Soitec Silicon On Insulator | Procede de mesure d'une energie d'adhesion, et substrats associes |
JP5279775B2 (ja) * | 2010-08-25 | 2013-09-04 | 株式会社東芝 | 半導体装置の製造方法 |
US20120129318A1 (en) * | 2010-11-24 | 2012-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Atmospheric pressure plasma etching apparatus and method for manufacturing soi substrate |
FR2980302A1 (fr) * | 2011-09-20 | 2013-03-22 | St Microelectronics Crolles 2 | Procede de protection d'une couche d'un empilement vertical et dispositif correspondant |
US8853054B2 (en) | 2012-03-06 | 2014-10-07 | Sunedison Semiconductor Limited | Method of manufacturing silicon-on-insulator wafers |
JP5978764B2 (ja) * | 2012-05-24 | 2016-08-24 | 信越半導体株式会社 | Soiウェーハの製造方法 |
US20140127857A1 (en) * | 2012-11-07 | 2014-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Carrier Wafers, Methods of Manufacture Thereof, and Packaging Methods |
JP5921473B2 (ja) * | 2013-03-21 | 2016-05-24 | 株式会社東芝 | 半導体装置の製造方法 |
FR3036223B1 (fr) * | 2015-05-11 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de collage direct de substrats avec amincissement des bords d'au moins un des deux substrats |
US10867836B2 (en) * | 2016-05-02 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer stack and fabrication method thereof |
FR3076073B1 (fr) | 2017-12-22 | 2020-06-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de detourage de plaque |
CN110943066A (zh) * | 2018-09-21 | 2020-03-31 | 联华电子股份有限公司 | 具有高电阻晶片的半导体结构及高电阻晶片的接合方法 |
WO2020235373A1 (fr) * | 2019-05-23 | 2020-11-26 | 東京エレクトロン株式会社 | Procédé de traitement de substrat et système de traitement de substrat |
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US5455193A (en) * | 1994-11-17 | 1995-10-03 | Philips Electronics North America Corporation | Method of forming a silicon-on-insulator (SOI) material having a high degree of thickness uniformity |
US5494849A (en) * | 1995-03-23 | 1996-02-27 | Si Bond L.L.C. | Single-etch stop process for the manufacture of silicon-on-insulator substrates |
-
1994
- 1994-11-30 US US08/346,695 patent/US5668045A/en not_active Expired - Lifetime
-
1995
- 1995-11-16 WO PCT/US1995/014914 patent/WO1996017377A1/fr not_active Application Discontinuation
- 1995-11-16 EP EP95941409A patent/EP0744082A4/fr not_active Withdrawn
- 1995-11-16 JP JP8518846A patent/JPH09509015A/ja active Pending
-
1996
- 1996-07-25 KR KR1019960704030A patent/KR970700933A/ko not_active Withdrawn
-
1997
- 1997-03-19 US US08/820,593 patent/US5834812A/en not_active Expired - Lifetime
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