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WO1997040579A1 - Circuit logique resistant aux rayonnements - Google Patents

Circuit logique resistant aux rayonnements Download PDF

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Publication number
WO1997040579A1
WO1997040579A1 PCT/US1997/006642 US9706642W WO9740579A1 WO 1997040579 A1 WO1997040579 A1 WO 1997040579A1 US 9706642 W US9706642 W US 9706642W WO 9740579 A1 WO9740579 A1 WO 9740579A1
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WO
WIPO (PCT)
Prior art keywords
logic
output signals
signals
section
output
Prior art date
Application number
PCT/US1997/006642
Other languages
English (en)
Inventor
Michael D. Lahey
Debra S. Harris
Harry N. Gardner
Michael J. Barry
Original Assignee
United Technologies Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Technologies Corporation filed Critical United Technologies Corporation
Publication of WO1997040579A1 publication Critical patent/WO1997040579A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/0033—Radiation hardening
    • H03K19/00338—In field effect transistor circuits

Definitions

  • This invention relates to semiconductor electronic circuits and more particularly to semiconductor logic circuits.
  • a single event upset is the result of an ion transitioning through a semiconductor structure and depositing charge on a critical circuit node within that structure.
  • SEU single event upset
  • CMOS logic circuit In a CMOS logic circuit, this can cause an unintended switch in the logic state, creating potentially catastrophic consequences for the system.
  • the primary SEU problem lies in the feedback path, where amplification and feedback of noise on a critical node can permanently change the cell's logic state.
  • CMOS logic include the use of redundant circuit paths. Dual circuit paths provide redundancy and allow implementation of voting schemes to reduce the effect of SEUs. However, the typical voting scheme uses digital logic to recombine the redundant paths, and thereby actually provides amplification of the SEU.
  • An object of the present invention is to provide a logic circuit architecture which has higher reliability in a radiation environment. Still another object of the present invention is to provide circuitry for a family of logic products having higher reliabihty in a radiation environment.
  • apparatus for performing a selected logic function includes a first logic portion which receives one or more logic state input signals and performs the selected logic function on the logic state input signals to provide one or more output signals, and further includes a second logic portion which receives the one or more logic state input signals and performs the selected logic function on the logic state input signals to provide one or more output signals, and further combines each output signal from the first logic portion with the corresponding output signal from the second logic portion to provide one or more resultant logic output signals.
  • apparatus for performing a selected logic function includes an input section which receives one or more logic state input signals and provides a pair of buffered logic state signals for each, and further includes, a logic section having a first and second portion, each receiving one logic state signal from each of the pairs of buffered logic state signals, and each perforrning the selected logic function on the logic state signals received thereby to each provide one or more output signals, and each of said output signals from the first portion combined in analog fashion with a corresponding one of the output signals from the second portion to provide one or more logic section output signals, and further includes an output section receiving each of the one or more logic section output signals and providing one or more resultant logic output signals.
  • the present invention provides a combinatorial logic circuit having higher reliability in a radiation environment
  • the present invention further provides circuitry for a family of products having higher reUability in a radiation environment with little impact to the die size and no decrease in functionality.
  • FIG. 1 is a schematic illustration of a NAND logic function, which is used in the description of the present invention
  • FIG. 2 is a schematic illustration of the best mode embodiment of the present invention as used in the NAND logic function of FIG. 1;
  • FIG. 3 is a schematic illustration of one element used in the embodiment of Fig. 2;
  • FIG. 4 is a schematic illustration of another element used in the embodiment of Fig. 2. Best Mode for Carrying out the Invention
  • a two input NAND circuit 20 receives logic signal A on line 22 and logic signal B on line 24, and produces a NAND logic output signal Y on line 26.
  • logic signal A on line 22 and logic signal B on line 24 are each received by an input section 28.
  • Each of the logic signals on lines 22, 24 are presented to an associated one of a pair of signal conditioning circuits 29a, 29b within the input section 28.
  • the signal conditioning circuits 29a, 29b are identical.
  • the circuit 29a has a diode 30 which provides protection against logic signal A magnitudes less than the lower power supply voltage magnitude V S s, and a diode 32 which provides protection against logic signal A magnitudes greater than the upper power supply voltage magnitude VQ D -
  • V S s is approximately zero (0) volts and V D D is in the range of from 4.5 to 5.5 volts.
  • the diodes 30, 32 are physically located as close to where the input signal on line 22 is received, as is practical. In situations where the input signal A on line 22 cannot exceed the magnitude range of the power supplies, such as where the source of logic signal A resides on the same integrated circuit as the NAND circuit 20, the two diodes 30, 32 may not be necessary.
  • the circuit 29a further comprises a series resistor 33 that is electrically connected between the diodes 30, 32 and the signal inputs a pair of buffer stages 34, 36.
  • the resistor 33 provides electrostatic discharge protection (ESD) on line 22.
  • ESD electrostatic discharge protection
  • the buffer stages 34, 36 each receive the ESD protected signal and provide a pair of buffered, redundant A signals on lines 38, 40 respectively.
  • the pair of buffer stages 34, 36 represent independent signal paths, such that, a failure in one of the pair of buffer stages 34, 36 will not disturb the logic signal out of the other.
  • the pair of buffer stages 34, 36 are physically spaced further apart than normal so that the effect of a single ion transitioning through the semiconductor structure is less likely to cause single event upset (SEU) in both of the pair of buffer stages 34, 36.
  • SEU single event upset
  • the pair of the buffer stages 34, 36 provide the same logic function, non inverting buffering, and comprise logic gates of the same type, so that the pair of buffered A signals on lines 38, 40 are substantially similar to each other in logic state and timing.
  • one or both of the pair of buffer stages 34, 36 may provide a logic function other than non inverting buffering, so long as suitable modifications are made to other logic, described below, in the NAND circuit 20.
  • each of the buffer stages 34 and 36 comprise cascaded first and second inverter 42, 44 and 46, 48, respectively.
  • the inverters are shown to be identical.
  • the first inverters 42, 46 buffer and invert the logic signal .
  • the second inverters 44, 48 restore the logic states of the pair of buffered A signals on lines 38, 40 to that of the input signal A on line 22.
  • Fig. 3 is a circuit for the inverter 42, which comprises a P channel MOSFET 42a and an N channel MOSFET 42b.
  • the input pin (IN) of the first inverter 42 is electrically connected to the gate 42c of the P channel and the gate 42d of the N channel MOSFETs.
  • the source 42e of the P channel is connected to V DD and the source 42f ofthe N channel is connected to Vss-
  • the drain 42g of the P channel MOSFET is connected to the drain 42h of the N channel which then serves as the output (OUT) for the first inverter 42.
  • the other inverters 44, 46, 48 have similar transistor level circuits to that of the first inverter 42.
  • the operation of the first inverter 42 is as follows. When the signal input at IN is at a high logic state voltage, the N channel MOSFET 42b is "on", i.e. its resistance from drain to source is low, and the P channel MOSFET 42a is "off', i.e. its resistance from drain to source is high.
  • the B input logic signal on line 24 is received by signal conditioning circuitry 29b which is similar to that described with respect to circuit 29a.
  • Two diodes 50, 52 provide under voltage and over voltage protection. In situations where the input signal B on line 24 can not exceed the range of the power supplies the two diodes 50, 52 may not be necessary.
  • a series resistor 53 is positioned after the two diodes 50, 52 to provide electrostatic discharge protection (ESD) on the input signal B on line 24.
  • ESD protected input signal is then passed to a pair of buffer stages 54, 56 which provide a pair of buffered B signals on lines 58, 60 respectively.
  • a failure in one of the pair of buffer stages 54, 56 will not disturb the logic signal out of the other.
  • the pair of buffer stages 54, 56 are physically spaced further apart than normal so that the effect of a single ion is less likely to cause single event upset (SEU) in both of the pair of buffer stages 54, 56.
  • SEU single event upset
  • the pair of buffer stages 54, 56 provide the same logic function, non inverting buffering, and comprise logic gates of the same type, so that the pair of buffered B signals on lines 58, 60 are substantially similar to each other in logic state and timing.
  • one or both of the pair of buffer stages 54, 56 may provide a logic function other than non inverting buffering, so long as suitable modifications are made to other logic, described below, in the NAND circuit 20.
  • the NAND circuit 20 further comprises a logic section 70 having a first portion 72 and a second portion 74. The first and second portions 72, 74 each receives one signal from each of the buffered A and B signal pairs on lines 38, 40 and 58,60.
  • the first and second portions 72, 74 represent independent signal paths, such that, a failure in one will not disturb the logic of the other. To this end, in the best mode embodiment, the portions 72, 74 are physically spaced further apart than normal so that the effect of a single ion transitioning through the semiconductor structure is less likely to cause single event upset (SEU) in both portions 72, 74.
  • SEU single event upset
  • Each portion 72, 74 comprises the logic necessary to enable it to provide the overall logic function of the circuit, e.g. the NAND logic function of the NAND circuit 20 in the best mode embodiment.
  • the appropriate logic depends not only on the overall logic function of the circuit, but also on the logical effect of the input section 28 buffer stages 34, 36, 54, 56 and the output section, described hereinbelow.
  • the input section 28 buffer stages 34, 36, 54, 56 and the output section are non inverting buffers, and therefore have no logical effect. Consequently, the logic for the first and second portions 72, 74 of the logic section 70 each need only comprise a NAND gate 76, 78, or its equivalent, to provide the NAND function.
  • FIG. 4 A schematic representation of the transistor level circuit for the NAND gate 76 of the first portion 72 is shown in Fig. 4.
  • the NAND gate 76 has a first input 76a which is electrically connected to the gates 76b, 76c of a first pair 76d of P channel MOSFETs.
  • the first pair 76d of P channel MOSFETs have their sources 76e electrically connected to V DD and their drains 76f electrically connected to the drains 76g of a second pair 76h of P channel MOSFETs.
  • the sources 76i of the second pair 76h of P channel MOSFETs are connected to V DD and the gates 76j, 76k are connected to the second input signal 761.
  • the drains 76f, 76g of both pairs 76d, 76h of P channel MOSFETs are further connected to the drains 76m of a first pair 76n of N channel MOSFETs and the output 76p of the NAND gate 76.
  • the first pair 76n of N channel MOSFETs have their gates 76q, 76r connected to the second input 761.
  • Each of the sources 76s of the first pair 76n of N channel MOSFETs is connected to a different one of the drains 76t of a second pair 76u of N channel MOSFETs.
  • the second pair 76u of N channel MOSFETs have their gates 76v, 76 w 6642
  • the operation of the NAND gate 76 is as follows. When both of the inputs are at a high logic state voltage, both pairs 76n, 76s of N channel MOSFETs are "on", i.e. low resistance, and both pairs 76d, 76h of P channel MOSFETs are "off, i.e. high resistance. At the output 76p, this produces a high resistance to the V DD supply and a low resistance to the Vss supply. The result is an output voltage of approximately V S s, representing a low logic state.
  • the NAND gate 78 of the second portion 74 has a similar transistor level circuit schematic (not shown) and operation to that of the NAND gate 76 of the first portion 72.
  • the first and second portions 72, 74 each operate on their respective input signals and produce first and second portion output signals which are summed, or combined, in analog fashion to produce a logic section output signal on line 84.
  • the logic section output signal on line 84 takes on the logic state corresponding to the voltage of the analog combination. This is in contrast to a combination that combines the signals by perfoirriing a logical operation on each of their logic states.
  • the transistors in the NAND gates 76, 78 have "on" resistances in the range of from about 500 ohms to 5,000 ohms. Lower resistances are not required because the NAND gates do not to provide high magnitude output current. Accordingly, the connection should have an electrical resistance of about less than 500 ohms, preferably less than 10 ohms. In the best mode embodiment, a direct electrical connection having a resistance below / ohm, specifically about .01 ohms, is used. However, those skilled in the art will recognize that other suitable transistors having other "on" resistances , and other connections having other resistances may also be used.
  • the transistors of both of the NAND gates 76, 78 are in similar "on" and “off” states. Consequently, the voltage contributions from the first and second portions to the logic section output signal on line 84 are both approximately V S s, or both approximately V DD , and the combined signal, the logic section output signal on line 84, is also approximately Vss, corresponding to a logic low, or V DD , corresponding to a logic high. Statistically, only one transistor will experience SEU at a given time. Thus when an ion transitions through the semiconductor one portion 72, 74 of the logic section 70, may experience SEU in one of the transistors in its NAND gate 76, 78.
  • That transistor may change state from “on” to “off” or “off” to “on”.
  • any change in logic section output signal voltage on line 84 is small, since the output from the affected portion is combined, in analog fashion, as described above, with the output from the unaffected portion. n Consequently, the voltage effect of the SEU is reduced, or attenuated.
  • At or below the designed ion energy level of 80 MeVcmVmg there is insufficient energy in the ion to cause the logic section output signal on line 84 to transition to an incorrect logic state.
  • the logic section output signal on line 84 remains at the correct logic state throughout the SEU.
  • the typical SEU lasts for about 20 nano seconds after which the transistor experiencing SEU returns to its prior state. Capacitance in the output portion, described hereinbelow, provides additional filtering for the small voltage changes in the logic section output signal on line 84.
  • the summation approach of the present invention does not operate as a standard logic function.
  • the summation here should not be used for combining logic signals which are not substantially similar in state and tuning for the very reason that it does not provide a normal logical combination. Instead, it provides a means for combming substantially similar signals wherein a SEU failure in one of the signals does not cause failure of the combined signal.
  • the logic section output signal on line 84 is passed to an output section 86. Nodal capacitance, not shown, on line 84, provides some additional filtering for the logic section output signal.
  • the output section 86 further comprises a pair of inverters 88, 90 for buffering of the signal.
  • the pair of inverters 88, 90 are similar to that of the first inverter 42 of the A input signal buffer stage 34 with the exception that the transistors sizes are larger to reduce the likelihood that they themselves will experience SEU. Larger and stronger transistors are better able to resist SEU by counting the collection of charge through the substrate that is brought on by the entering ion.
  • the pair of inverters 88, 90 are also larger to provide the desired capability for driving additional logic circuits that may be connected to the output logic signal Y on line 26.
  • the output section further includes a pair of diodes 92, 94 to protect against under and over voltage damage. As with all circuitry, appropriate decoupling should be used when employing the present invention.
  • the NAND circuit 20 is implemented in CMOS technology, preferably 1.2 micro meters (um) or smaller, however, any other suitable technology may also be used. At 1.2 um the circuit is small enough in size, has relatively low power, and provides high speed operation.
  • each of the logic signals on lines 22, 24, 26 are of the type having CMOS logic levels, however, as will be obvious to those skilled in the art, the NAND logic circuit 20 may also be designed to accommodate TTL logic signals. In the preferred embodiment, this only requires threshold modifications in the input section.
  • the best mode of the present invention creates the logic section output signal on line 84 by combuiing the outputs from NAND gates 76, 78, those skilled in the art will recognize that other transistor configurations may also be suitable. For example, transistor configurations to be connected may also be of the type used in inverters. While the best mode of the present invention includes an input section, the logic section of the present invention may also be used without the input section or portions of the input section. For example, each input logic signal may be routed directly to both portions of the logic section, without passing through the input section, so long as the logic section is suitably adapted for operation with the logic levels of the input logic signals. The present invention may also be used without the output section of the best mode embodiment.
  • the logic section output signal may be used to drive other logic directly so long as the logic section is suitably adapted for driving such other logic.
  • the present invention may be used in logic circuits of any type, including but not limited to that of OR, NOR, XOR, XNOR, inverter, AND, buffer, flip flop, line drivers and transceivers, with or without three-state outputs.
  • the NAND circuit of the present invention has 2 inputs and 1 output, the present invention ;may be used in logic circuits having any number of inputs, e.g. N, where N is one or more, and any number of outputs, e.g. K, where K is one or more.
  • the input section still preferably receives each of the N input signals and produces a pair of buffered signals for each.
  • One signal from each pair of buffered signals is received by the first portion of the logic section and the other signal from each pair is received by the second portion.
  • Each of the two logic section portions has all of the necessary logic gates for implementing the overall function.
  • the first portion produces K first portion output signals and the second portion produces K second portion output signals.
  • Each of the K first portion output signals is combined with the counterpart signal from the K second portion output signals to produce K logic section output signals.
  • the K logic section output signals are passed to the output section where they are buffered to produce the K outputs for the circuit.
  • the present invention may also be used in logic circuits of the type including but not limited to comparators, flip flops, decoders/demultiplexers, selectors/multiplexers, counters, shift registers, parity generators, adders, and memories.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

Appareil destiné à mettre en oeuvre une fonction logique, comprenant une première partie logique qui reçoit un ou plusieurs signaux d'entrée d'état logique et applique la fonction logique choisie aux signaux d'entrée pour produire un ou plusieurs signaux de sortie, ainsi qu'une seconde partie logique qui reçoit ledit ou lesdits signaux d'entrée et applique la fonction logique choisie auxdits signaux pour engendrer un ou plusieurs signaux de sortie. L'appareil combine chaque signal de sortie provenant de la première partie logique et le signal de sortie correspondant provenant de la seconde partie logique pour engendrer un ou plusieurs signaux de sortie résultants de circuit logique présentant une meilleure fiabilité dans un environnement soumis à des rayonnements.
PCT/US1997/006642 1996-04-22 1997-04-18 Circuit logique resistant aux rayonnements WO1997040579A1 (fr)

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US63585396A 1996-04-22 1996-04-22
US635,853 1996-04-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000054410A1 (fr) * 1999-03-09 2000-09-14 Iroc Technologies Circuit logique protege contre des perturbations transitoires
WO2001086397A3 (fr) * 2000-04-28 2003-03-13 Bae Systems Dispositif pour diviseur d'horloge protege contre les rayonnements

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FR2386199A1 (fr) * 1977-04-01 1978-10-27 Bailey Controle Procede d'autosignalisation des defaillances d'un module d'automatisme statique de securite et module mettant en oeuvre ledit procede
JPS59108422A (ja) * 1982-12-14 1984-06-22 Nec Corp クロツク選択回路
US4709166A (en) * 1986-05-22 1987-11-24 International Business Machines Corporation Complementary cascoded logic circuit
EP0285789A2 (fr) * 1987-04-10 1988-10-12 International Business Machines Corporation Circuit logique à défaut tolérant
US5418473A (en) * 1992-10-28 1995-05-23 Idaho Research Foundation, Inc. Single event upset immune logic family
US5600260A (en) * 1995-06-29 1997-02-04 Motorola, Inc. Method and apparatus for hardening current steering logic to soft errors

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FR2386199A1 (fr) * 1977-04-01 1978-10-27 Bailey Controle Procede d'autosignalisation des defaillances d'un module d'automatisme statique de securite et module mettant en oeuvre ledit procede
JPS59108422A (ja) * 1982-12-14 1984-06-22 Nec Corp クロツク選択回路
US4709166A (en) * 1986-05-22 1987-11-24 International Business Machines Corporation Complementary cascoded logic circuit
EP0285789A2 (fr) * 1987-04-10 1988-10-12 International Business Machines Corporation Circuit logique à défaut tolérant
US5418473A (en) * 1992-10-28 1995-05-23 Idaho Research Foundation, Inc. Single event upset immune logic family
US5600260A (en) * 1995-06-29 1997-02-04 Motorola, Inc. Method and apparatus for hardening current steering logic to soft errors

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BARBOUR A E ET AL: "A GENERAL, CONSTRUCTIVE APPROACH TO FAULT-TOLERANT DESIGN USING REDUNDANCY", IEEE TRANSACTIONS ON COMPUTERS, vol. 38, no. 1, January 1989 (1989-01-01), pages 15 - 29, XP000023247 *
PATENT ABSTRACTS OF JAPAN vol. 008, no. 229 (E - 273) 20 October 1984 (1984-10-20) *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000054410A1 (fr) * 1999-03-09 2000-09-14 Iroc Technologies Circuit logique protege contre des perturbations transitoires
FR2790887A1 (fr) * 1999-03-09 2000-09-15 Univ Joseph Fourier Circuit logique protege contre des perturbations transitoires
US7380192B1 (en) 1999-03-09 2008-05-27 Iroc Technologies Logic circuit protected against transient disturbances
WO2001086397A3 (fr) * 2000-04-28 2003-03-13 Bae Systems Dispositif pour diviseur d'horloge protege contre les rayonnements

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