WO1997006469B1 - Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabrication - Google Patents
Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabricationInfo
- Publication number
- WO1997006469B1 WO1997006469B1 PCT/US1996/012779 US9612779W WO9706469B1 WO 1997006469 B1 WO1997006469 B1 WO 1997006469B1 US 9612779 W US9612779 W US 9612779W WO 9706469 B1 WO9706469 B1 WO 9706469B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- exposure mask
- layer
- substrate
- nanocrystals
- nanometers
- Prior art date
Links
- 239000002159 nanocrystal Substances 0.000 title claims abstract 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract 3
- 239000002243 precursor Substances 0.000 title claims 9
- 238000001459 lithography Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract 16
- 239000000463 material Substances 0.000 claims abstract 4
- 238000005245 sintering Methods 0.000 claims abstract 4
- 238000002844 melting Methods 0.000 claims abstract 2
- 230000008018 melting Effects 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 6
- 239000011347 resin Substances 0.000 claims 6
- 229920005989 resin Polymers 0.000 claims 6
- 230000004927 fusion Effects 0.000 claims 4
- 150000003841 chloride salts Chemical class 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims 3
- 150000002602 lanthanoids Chemical class 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 150000002739 metals Chemical class 0.000 claims 3
- 229910052763 palladium Inorganic materials 0.000 claims 3
- 229910052697 platinum Inorganic materials 0.000 claims 3
- 229910052702 rhenium Inorganic materials 0.000 claims 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229920002799 BoPET Polymers 0.000 claims 1
- 239000005041 Mylar™ Substances 0.000 claims 1
- 239000004952 Polyamide Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 230000002745 absorbent Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229920000515 polycarbonate Polymers 0.000 claims 1
- 239000004417 polycarbonate Substances 0.000 claims 1
- 229920000728 polyester Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- -1 tungεten Chemical compound 0.000 claims 1
- 238000001015 X-ray lithography Methods 0.000 abstract 1
- 239000013590 bulk material Substances 0.000 abstract 1
Abstract
La présente invention concerne un masque d'exposition à haute résolution convenant à la gravure aux rayons X ainsi qu'un procédé de fabrication de ce masque. Des nanocristaux de matières à forte densité d'électrons, de préférence sous la forme d'une solution colloïdale, sont appliqués à la surface d'un substrat à faible densité d'électrons de manière à former des détails d'une grande finesse, allant jusqu'à environ 10 nanomètres. L'abaissement des températures de fusion et de frittage associées aux nanocristaux, par comparaison avec la matière en vrac, permet de recourir à des conditions de traitement plus modérées. Il en résulte une réduction des contraintes interfaciales entre des couches dissemblables.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96927322A EP0843842A4 (fr) | 1995-08-07 | 1996-08-06 | Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabrication |
| JP9508603A JPH11510651A (ja) | 1995-08-07 | 1996-08-06 | リソグラフィ露光マスク及びそのマスクの製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/512,167 US5670279A (en) | 1994-03-24 | 1995-08-07 | Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same |
| US08/512,167 | 1995-08-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1997006469A1 WO1997006469A1 (fr) | 1997-02-20 |
| WO1997006469B1 true WO1997006469B1 (fr) | 1997-04-03 |
Family
ID=24037968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1996/012779 WO1997006469A1 (fr) | 1995-08-07 | 1996-08-06 | Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabrication |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5670279A (fr) |
| EP (1) | EP0843842A4 (fr) |
| JP (1) | JPH11510651A (fr) |
| WO (1) | WO1997006469A1 (fr) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6277740B1 (en) * | 1998-08-14 | 2001-08-21 | Avery N. Goldstein | Integrated circuit trenched features and method of producing same |
| US6780765B2 (en) | 1998-08-14 | 2004-08-24 | Avery N. Goldstein | Integrated circuit trenched features and method of producing same |
| US6139626A (en) * | 1998-09-04 | 2000-10-31 | Nec Research Institute, Inc. | Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals |
| US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
| JP2004510678A (ja) * | 2000-10-04 | 2004-04-08 | ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ アーカンソー | コロイドナノ結晶の合成 |
| US6794265B2 (en) * | 2001-08-02 | 2004-09-21 | Ultradots, Inc. | Methods of forming quantum dots of Group IV semiconductor materials |
| US6710366B1 (en) | 2001-08-02 | 2004-03-23 | Ultradots, Inc. | Nanocomposite materials with engineered properties |
| US20030066998A1 (en) | 2001-08-02 | 2003-04-10 | Lee Howard Wing Hoon | Quantum dots of Group IV semiconductor materials |
| US6819845B2 (en) * | 2001-08-02 | 2004-11-16 | Ultradots, Inc. | Optical devices with engineered nonlinear nanocomposite materials |
| US7005669B1 (en) | 2001-08-02 | 2006-02-28 | Ultradots, Inc. | Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods |
| US6936181B2 (en) * | 2001-10-11 | 2005-08-30 | Kovio, Inc. | Methods for patterning using liquid embossing |
| US7150910B2 (en) * | 2001-11-16 | 2006-12-19 | Massachusetts Institute Of Technology | Nanocrystal structures |
| US6957608B1 (en) | 2002-08-02 | 2005-10-25 | Kovio, Inc. | Contact print methods |
| US6897151B2 (en) * | 2002-11-08 | 2005-05-24 | Wayne State University | Methods of filling a feature on a substrate with copper nanocrystals |
| US6887297B2 (en) * | 2002-11-08 | 2005-05-03 | Wayne State University | Copper nanocrystals and methods of producing same |
| WO2004085305A2 (fr) * | 2003-03-21 | 2004-10-07 | Wayne State University | Nanoparticules contenant des oxydes de metaux |
| US20070178615A1 (en) * | 2003-05-21 | 2007-08-02 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Semiconductor nanocrystal-based optical devices and method of preparing such devices |
| JP4309911B2 (ja) * | 2006-06-08 | 2009-08-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US20100047722A1 (en) * | 2008-08-25 | 2010-02-25 | Seoul National University Research & Development Business Foundation (Snu R&Db Foundation) | Three-dimensional nano material structures |
| US8837039B2 (en) * | 2012-04-26 | 2014-09-16 | Uchicago Argonne, Llc | Multiscale light amplification structures for surface enhanced Raman spectroscopy |
| US9487869B2 (en) | 2012-06-01 | 2016-11-08 | Carnegie Mellon University | Pattern transfer with self-assembled nanoparticle assemblies |
| US9356106B2 (en) * | 2014-09-04 | 2016-05-31 | Freescale Semiconductor, Inc. | Method to form self-aligned high density nanocrystals |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4534820A (en) * | 1981-10-19 | 1985-08-13 | Nippon Telegraph & Telephone Public Corporation | Method for manufacturing crystalline film |
| US4515876A (en) * | 1982-07-17 | 1985-05-07 | Nippon Telegraph & Telephone Public Corp. | X-Ray lithography mask and method for fabricating the same |
| SG43949A1 (en) * | 1987-09-30 | 1997-11-14 | Canon Kk | X-ray mask support and process for preparation thereof |
| IL88837A (en) * | 1988-12-30 | 1993-08-18 | Technion Res & Dev Foundation | Method for the preparation of mask for x-ray lithography |
| US5051326A (en) * | 1989-05-26 | 1991-09-24 | At&T Bell Laboratories | X-Ray lithography mask and devices made therewith |
| US5262357A (en) * | 1991-11-22 | 1993-11-16 | The Regents Of The University Of California | Low temperature thin films formed from nanocrystal precursors |
| US5318687A (en) * | 1992-08-07 | 1994-06-07 | International Business Machines Corporation | Low stress electrodeposition of gold for X-ray mask fabrication |
| US5491114A (en) * | 1994-03-24 | 1996-02-13 | Starfire Electronic Development & Marketing, Ltd. | Method of making large-area semiconductor thin films formed at low temperature using nanocrystal presursors |
| US5576248A (en) * | 1994-03-24 | 1996-11-19 | Starfire Electronic Development & Marketing, Ltd. | Group IV semiconductor thin films formed at low temperature using nanocrystal precursors |
| US5559057A (en) * | 1994-03-24 | 1996-09-24 | Starfire Electgronic Development & Marketing Ltd. | Method for depositing and patterning thin films formed by fusing nanocrystalline precursors |
-
1995
- 1995-08-07 US US08/512,167 patent/US5670279A/en not_active Expired - Fee Related
-
1996
- 1996-08-06 WO PCT/US1996/012779 patent/WO1997006469A1/fr not_active Application Discontinuation
- 1996-08-06 JP JP9508603A patent/JPH11510651A/ja active Pending
- 1996-08-06 EP EP96927322A patent/EP0843842A4/fr not_active Withdrawn
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