WO1997013274A1 - Support pour composants electroniques - Google Patents
Support pour composants electroniques Download PDFInfo
- Publication number
- WO1997013274A1 WO1997013274A1 PCT/GB1996/002259 GB9602259W WO9713274A1 WO 1997013274 A1 WO1997013274 A1 WO 1997013274A1 GB 9602259 W GB9602259 W GB 9602259W WO 9713274 A1 WO9713274 A1 WO 9713274A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- support
- layer
- ceramic
- dispersion
- substrate
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 239000006185 dispersion Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000007751 thermal spraying Methods 0.000 claims abstract description 8
- 239000000945 filler Substances 0.000 claims abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 6
- 239000011156 metal matrix composite Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 36
- 239000011247 coating layer Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 229910001593 boehmite Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000012700 ceramic precursor Substances 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009996 mechanical pre-treatment Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
Definitions
- the invention relates to a support for electronic components comprising an electrically isolating layer on a substrate and to a method of manufacturing such a suppor .
- Metal matrix composites such as may be manufactured in accordance with the metnods described m patent application No. 96 11358.4, are particularly suitable as substrates. In addition to meeting the above mentioned requirements they have the further advantage of low density. However, being electrically conducting, it is necessary that they are provided with a thm electrically isolating layer between the surface of the substrate and semiconductor devices mounted thereon. Such an electrically isolating layer has to be capable of providing effective isolation which will not break down under the stress of the electrical voltages which may appear m use on the semiconductor devices.
- electrically isolating layers comprise a ceramic such as alumina coated on to a substrate by a thermal spraying process such as plasma spraying or a high velocity oxyfuel process. The thickness of the ceramic coating is a compromise between the breakdown voltage which increases with increasing thickness and the desirability for a th coating to minimise thermal impedance between the electrical device and the heat sink.
- the invention provides, in one of its aspects, a support for electronic components comprising a substrate, an electrically isolating ceramic iayei applied to the substrate by a thermal spraying process, voids at least at the exposed surface of the thermally sprayed ceramic layer having been sealed by the application thereto of a fine dispersion of a filler material heat treated to consolidate the filler material and the thermally sprayed ceramic layer.
- the substrate comprises a metal matrix composite, preferably comprising a matrix of aluminium or aluminium alloy reinforced with particulate silicon carbide.
- the said dispersion may conveniently comprise a fine dispersion of a polymeric plastics material or a precursor for a polymer or a polymeric ceramic material, which case the heat treatment is such as to polymerise the precursor.
- the isolation layer will usually be required to withstand relatively high temperatures both further fabrication steps and use.
- the said dispersion comprises a fine dispersion of a ceramic, a glass or a precursor for a ceramic or a glass and the heat treatment is carried out at a temperature which sinters the finely dispersed ceramic or fuses the glass as the case may be or converts the precursor to consolidated ceramic or fused glass.
- the invention provides, in another of its aspects, a method of fabricating a support as aforesaid, which method comprises the steps of
- fine dispersion we mean a dispersion of particles a sufficient proportion of which are small enough to enter into and fill up voids in the layer formed by the thermal spraying process.
- the said dispersion may comprise a solution or sol of the said precursor.
- Figure 1 is a diagrammatic part cross sectional view of a support illustrating a stage in the process of the method
- Figure 2 is a similar cross sectional view at a later cage the process.
- suostrate 11 is a metal matrix composite comprising a matrix of aluminium or aluminium alloy reinforced with particulate silicon carbide and made by the method of our patent application No. 96 11358.4.
- Such composite is an excellent material for the production of packages for power handling semiconductors by virtue of its low mass, high thermal conductivity and low thermal expansion coefficient.
- the thermal expansion coefficient in particular can be closely matched to that of alumina semiconductor substrates for improving overall device reliability during thermal cycling.
- An electrically isolating layer on substrate 11 is formed by a three step process, the first step of which is illustrated in Figure 1 which shows a layer 12 of ceramic, alumina in this example, which has been applied by air plasma spraying.
- a layer is porous containing numerous voids such as 13 which may include so called pin-hole voids.
- adhesion of the layer 12 to the substrate 11 may be enhanced by Known chemical or mechanical pre-treatments of the substrate surface prior to theim ⁇ -- spraying.
- a dispersion of a chemical precursor to a ceramic is then applied to the layer 12.
- the dispersion is a boehmite sol, being a precursor for alumina.
- the dispersion is infiltrated mto the voids in the layer 12.
- This infiltration may be achieved by simple dipping relying upon capillary action to fill the voids.
- a forced flow can be provided by a vacuum impregnation. Excess material is wiped from the coat g surface by a doctor blade or absorbent wiper.
- the infiltrated coating is then baked at 300 - 400°C in order to convert the precursor to ceramic (alumina in the case of boehmite sol precursor) .
- Figure 2 illustrates the final product with a thm surface layer of coat g shown at 14.
- the following table shows experimental measurements made on two samples with a plasma sprayed layer 12 of alumina of respectively 60 microns and 210 microns thickness.
- the table shows a series of readings of measured breakdown voltage using A) an indium foil contact and E) a direct surface measurement. All measurements are in kilovolts and for each sample, a series of measurements is shown for the stage illustrated m Figure 1 prior to any application of the sealing coatmg 14 and a correspondmg series of measurements for the final product as illustrated in Figure 2 (columns marked + ⁇ mpregnat ⁇ on) . Averages of the five readings are shown in the final ro.'. All values Al_O j Al 0, Al 0, AIA in KV 80 ⁇ m SO ⁇ m + 210 ⁇ m 210 ⁇ m +
- the isolation layer made according to the foregomg example is readily treated by masking and thermal spraying for depositing circuit tracking on the isolation layer.
- selective electropla ing can be used to provide the tracking.
- Boehmite sol of available commercial and custom manufactured grades has been found to be particularly suitable as mfiltrant precursor.
- other dispersions may be used and, dependmg upon the typical size of voids in the layer 12, may comprise a salt in solution or a sol having particle size up to 100 angstrom units. Desirable features for the dispersion are that it has a high concentration of the precursor and that the particle size is fine enough to achieve effective penetration of the pores in layer 12. It is important that the temperature required to convert the precursor to ceramic i ⁇ as low as practicable to avoid damage to the sues- race during tne baking step.
- the dispersion may mclude wetting and dispersion agents to improve concentration and flow properties.
- Alumina is particularly suitable as the ceramic for the first layer 12, but other ceramics may be utilised and the most appropriate thermal spraying process adopted for the deposition. Thus, we used air plasma sprayed alumina, but low pressure plasma spraying is also suitable.
- a high velocity oxyfuel technique can be used to apply a ceramic layer of, for example, mullite, cordierite or zirconia.
- An alumina sol or s-.lic ⁇ n sol is particularly suitable for forming the sealing layer 14.
- other dispersions of ceramic precursors may be used.
- sealing layer of polymeric material or of glass rather than ceramic is readily achieved by appropriate selection of precursor.
- Application of ultrasound to the substrate durmg infiltration may be use ⁇ to improve the penetration of the fine dispersion into the first ceramic layer.
- masking may be used to control the deposition upon the substrate of the first ceramic layer, the secondary sealing coat g, or both.
- the manufacturing process described integrates effectively with the substrate fabrication process leading to a low overall system cost and good system performance as compared with conventional methods of achieving electrical isolation.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
Ce support pour composants électroniques comprend un substrat (11) que l'on a recouvert d'une couche de revêtement isolante électriquement en appliquant une première couche (12) céramique à l'aide d'un procédé de vaporisation thermique. On bouche les vides (13) de la première couche céramique en appliquant une dispersion fine d'un matériau de charge, puis en traitant à la chaleur afin de consolider la couche (12, 14) isolante rendue hermétique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU69382/96A AU6938296A (en) | 1995-09-29 | 1996-09-13 | A support for electronic components |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9519888.3A GB9519888D0 (en) | 1995-09-29 | 1995-09-29 | Electrically isolating coating layers |
| GB9519888.3 | 1995-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1997013274A1 true WO1997013274A1 (fr) | 1997-04-10 |
Family
ID=10781482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1996/002259 WO1997013274A1 (fr) | 1995-09-29 | 1996-09-13 | Support pour composants electroniques |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU6938296A (fr) |
| GB (2) | GB9519888D0 (fr) |
| WO (1) | WO1997013274A1 (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19752195A1 (de) * | 1997-11-25 | 1999-06-17 | Siemens Ag | Halbleiterelement mit einer Tragevorrichtung und einem Zuleitungsrahmen und einem damit verbundenen Halbleiterchip |
| WO2007140494A1 (fr) * | 2006-06-07 | 2007-12-13 | Ab Mikroelektronik Gesellschaft Mit Beschränkter Haftung | Support de circuit |
| WO2007140495A3 (fr) * | 2006-06-07 | 2008-10-09 | Mikroelektronik Ges Mit Beschr | Procédé de fabrication d'un support de circuit |
| CN102017342A (zh) * | 2008-04-02 | 2011-04-13 | 科特克表面调质处理有限责任公司 | 包括圆柱形基体和介电辊子涂层的电晕辊以及用于制造这种电晕辊的方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001040544A1 (fr) * | 1999-11-30 | 2001-06-07 | Gotek Gmbh | Corps moule comportant une couche de protection impregnee |
| DE10052247A1 (de) * | 2000-10-21 | 2002-04-25 | Hella Kg Hueck & Co | Schaltungsstrukturen auf thermisch gespritzten Schichten |
| EP1253213A3 (fr) * | 2001-04-23 | 2004-04-07 | Sulzer Markets and Technology AG | Procédé de fabrication d'une couche céramique ayant des fonctions électriques ou électrochimiques |
| ITMO20060322A1 (it) * | 2006-10-12 | 2008-04-13 | Maria Prudenziati | Tecnica innovativa per il miglioramento delle caratteristiche dielettriche e di anticorrosione di ricoprimenti ottenuti con tecnologie thermal spray, aps, hvof e analoghe, in particolare di riporti isolanti quali ad es. a1203. |
| FR2967289B1 (fr) * | 2010-11-10 | 2013-08-23 | Valeo Sys Controle Moteur Sas | Equipement electrique comportant un circuit electronique et procede de fabrication d'un tel equipement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0048992A2 (fr) * | 1980-09-30 | 1982-04-07 | Kabushiki Kaisha Toshiba | Plaquette de circuit imprimé et son procédé de fabrication |
| US4340635A (en) * | 1980-12-15 | 1982-07-20 | Coors Porcelain Company | Ceramic substrate for fine-line electrical circuitry |
| EP0115412A2 (fr) * | 1983-01-27 | 1984-08-08 | United Kingdom Atomic Energy Authority | Revêtement pour substrat électrique |
| EP0346038A1 (fr) * | 1988-06-09 | 1989-12-13 | Advanced Composite Materials Corporation | Composite ternaire avec une matrice métallique |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4328285A (en) * | 1980-07-21 | 1982-05-04 | General Electric Company | Method of coating a superalloy substrate, coating compositions, and composites obtained therefrom |
| EP0217991A1 (fr) * | 1985-10-04 | 1987-04-15 | Repco Limited | Revêtement céramique |
| US4576874A (en) * | 1984-10-03 | 1986-03-18 | Westinghouse Electric Corp. | Spalling and corrosion resistant ceramic coating for land and marine combustion turbines |
| DE3631536A1 (de) * | 1986-09-17 | 1988-03-24 | Bayer Ag | Gasdichte plasmagespritzte keramikkoerper sowie verfahren zu deren herstellung |
| JPH089765B2 (ja) * | 1988-04-15 | 1996-01-31 | 三菱重工業株式会社 | セラミツク溶射材の封孔処理方法 |
| CH692481A5 (de) * | 1988-10-21 | 2002-07-15 | Hort Revetements S A | Verfahren zum Aufbringen einer Fluorpolymer-Schicht auf eine Oberfläche eines Gegenstands und Gegenstand beschichtet nach dem Verfahren. |
| JP2647482B2 (ja) * | 1989-02-15 | 1997-08-27 | 中部電力株式会社 | セラミック溶射皮膜の封孔処理方法 |
| JP2612983B2 (ja) * | 1991-11-06 | 1997-05-21 | 朝日化学工業株式会社 | 溶融金属に対して耐食性を有するロール |
| GB2269392A (en) * | 1992-08-06 | 1994-02-09 | Monitor Coatings & Eng | Coating of components with final impregnation with chromia or phosphate forming compound |
| DE4303135C2 (de) * | 1993-02-04 | 1997-06-05 | Mtu Muenchen Gmbh | Wärmedämmschicht aus Keramik auf Metallbauteilen und Verfahren zu ihrer Herstellung |
| US6490891B1 (en) * | 1997-09-03 | 2002-12-10 | Robert W. Stringer | Draw bolt assemblies |
-
1995
- 1995-09-29 GB GBGB9519888.3A patent/GB9519888D0/en active Pending
-
1996
- 1996-09-13 AU AU69382/96A patent/AU6938296A/en not_active Abandoned
- 1996-09-13 GB GB9619236A patent/GB2305672A/en not_active Withdrawn
- 1996-09-13 WO PCT/GB1996/002259 patent/WO1997013274A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0048992A2 (fr) * | 1980-09-30 | 1982-04-07 | Kabushiki Kaisha Toshiba | Plaquette de circuit imprimé et son procédé de fabrication |
| US4340635A (en) * | 1980-12-15 | 1982-07-20 | Coors Porcelain Company | Ceramic substrate for fine-line electrical circuitry |
| EP0115412A2 (fr) * | 1983-01-27 | 1984-08-08 | United Kingdom Atomic Energy Authority | Revêtement pour substrat électrique |
| EP0346038A1 (fr) * | 1988-06-09 | 1989-12-13 | Advanced Composite Materials Corporation | Composite ternaire avec une matrice métallique |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19752195A1 (de) * | 1997-11-25 | 1999-06-17 | Siemens Ag | Halbleiterelement mit einer Tragevorrichtung und einem Zuleitungsrahmen und einem damit verbundenen Halbleiterchip |
| WO2007140494A1 (fr) * | 2006-06-07 | 2007-12-13 | Ab Mikroelektronik Gesellschaft Mit Beschränkter Haftung | Support de circuit |
| WO2007140495A3 (fr) * | 2006-06-07 | 2008-10-09 | Mikroelektronik Ges Mit Beschr | Procédé de fabrication d'un support de circuit |
| US8134083B2 (en) | 2006-06-07 | 2012-03-13 | Ab Mikroelektronik Gesselschaft Mit Beschrankter Haftung | Circuit carrier |
| CN102017342A (zh) * | 2008-04-02 | 2011-04-13 | 科特克表面调质处理有限责任公司 | 包括圆柱形基体和介电辊子涂层的电晕辊以及用于制造这种电晕辊的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9519888D0 (en) | 1995-11-29 |
| AU6938296A (en) | 1997-04-28 |
| GB9619236D0 (en) | 1996-10-23 |
| GB2305672A (en) | 1997-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1308817C (fr) | Substrat composite a faible constante dielectrique | |
| US7135767B2 (en) | Integrated circuit substrate material and method | |
| EP1095545B1 (fr) | Dispositif de traitement thermique et procede de fabrication associe | |
| US5337475A (en) | Process for producing ceramic circuit structures having conductive vias | |
| WO1994000966A1 (fr) | Substrats en ceramique a passage en metal hautement conducteur | |
| CN102123970B (zh) | 表面处理陶瓷构件、其制造方法及真空处理装置 | |
| WO1997013274A1 (fr) | Support pour composants electroniques | |
| CA2187231A1 (fr) | Revetement de substrats | |
| US3380156A (en) | Method of fabricating thin film resistors | |
| US5139851A (en) | Low dielectric composite substrate | |
| JP4382547B2 (ja) | 半導体装置用基板と半導体装置 | |
| EP0807318B1 (fr) | Procede de production d'un article recouvert de verre et article ainsi produit | |
| EP0113088B1 (fr) | Substrat porteur pour élément semi-conducteur | |
| RU2384027C2 (ru) | Способ изготовления микросхем | |
| CN114121392A (zh) | 热敏电阻元件及其制造方法 | |
| JPS6358706A (ja) | 電気皮膜 | |
| Gentle et al. | Silica/silicone nanocomposite films: A new concept in corrosion protection | |
| CN111883488B (zh) | 绝缘系统和沉积绝缘系统的方法 | |
| KR20240157141A (ko) | 내전압성이 개선된 절연막 조성물 및 그를 이용한 절연금속기판의 제조 방법 | |
| Falls et al. | Acocella et al. | |
| JP5307476B2 (ja) | 表面処理セラミックス部材およびその製造方法 | |
| CN118019312A (zh) | 一种泡沫陶瓷表面强结合力金属层结构及其制备方法 | |
| JPS62122152A (ja) | 半導体装置用基板の製造方法 | |
| KR20250050365A (ko) | 유무기 하이브리드 바인더를 이용한 고내열 절연막 조성물 및 그를 이용한 절연금속기판의 제조 방법 | |
| Robert et al. | Acocella et al.[45] Date of Patent: Aug. 18, 1992 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG US UZ VN AM AZ BY KG KZ MD RU TJ TM |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
| 122 | Ep: pct application non-entry in european phase |