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WO1997015951A1 - Couches de polymere de parylene - Google Patents

Couches de polymere de parylene Download PDF

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Publication number
WO1997015951A1
WO1997015951A1 PCT/US1996/017052 US9617052W WO9715951A1 WO 1997015951 A1 WO1997015951 A1 WO 1997015951A1 US 9617052 W US9617052 W US 9617052W WO 9715951 A1 WO9715951 A1 WO 9715951A1
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WO
WIPO (PCT)
Prior art keywords
layer
parylene polymer
parylene
polymer layer
level structure
Prior art date
Application number
PCT/US1996/017052
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English (en)
Inventor
John Wary
Roger A. Olson
William F. Beach
Original Assignee
Specialty Coating Systems, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Specialty Coating Systems, Inc. filed Critical Specialty Coating Systems, Inc.
Priority to AU75204/96A priority Critical patent/AU7520496A/en
Publication of WO1997015951A1 publication Critical patent/WO1997015951A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/025—Polyxylylenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
    • C08G2261/342—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms
    • C08G2261/3424—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms non-conjugated, e.g. paracyclophanes or xylenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates generally to parylene polymer layers, and more specifically to such layers which are disposed between electrically conductive layers in integrated circuits.
  • Semiconductors are widely used in integrated circuits for electronic products systems such as computers and televisions. These integrated circuits typically combine many transistors on a single crystal silicon chip to perform complex functions and store data. Semiconductor and electronics manufacturers, as well as end users, desire integrated circuits which can accomplish more in less time in a smaller package while consuming less power. However, some of these desires may be in opposition to each other. For example, simply shrinking the feature sizes on a given circuit from 0.5 microns to 0.25 microns can increase power consumption by 30%. Likewise, doubling operational speed generally doubles power consumption. Miniaturization also generally results in increased capacitive coupling, or cross talk, between conductors which carry signals across the chip. This can limit achievable speed and degrade the noise margin used to insure proper device operation.
  • One way to diminish power consumption and cross talk effects is to decrease the dielectric constant of electrically insulating layers that separate layers of electrically conductive materials within the integrated circuit.
  • operational conditions may include high temperatures, it can be advantageous to use materials with relatively high thermal stability to form the insulating layers.
  • Silicon dioxide is one ofthe most common materials used in insulating layers for integrated circuits. However, silicon dioxide is non-ideal due to its comparatively high dielectric constant of about 3.9.
  • Parylene polymers are poly-p-xylylenes which may be prepared starting with a d :
  • parylene dimers wherein X is typically a hydrogen or a halogen.
  • X is typically a hydrogen or a halogen.
  • parylene dimers include the following:
  • Polymer films formed from these parylene dimers may have comparatively low dielectric constants and relatively high melting temperatures. However, these parylene polymer films have relatively high dielectric constants and inferior thermal stabilities, rendering them less attractive for use in integrated circuits.
  • a vapor deposition method is used to form parylene polymer layers from parylene dimers.
  • One such vapor deposition method is disclosed in Journal of Applied Polymer Science 13, 2325 (1969). According to this method, commonly referred to as the Gorham process, the parylene dimer is cracked at an elevated temperature to produce parylene monomer having the structure:
  • the parylene monomer is condensed onto a substrate at a temperature of from about room temperature to about - 35 °C. Under these conditions, the parylene monomer simultaneously polymerizes on the substrate to form a layer of the parylene polymer adhered to the substrate.
  • a vapor deposition process for forming poly-p-xylylene films from other than parylene dimer materials is disclosed in U.S. Patent No. 5,268,202 (You). The method disclosed by this reference includes forming the monomer vapor inside the vacuum chamber in which deposition occurs, precluding the purification opportunities afforded by the parylene dimer process prior to deposition on the substrate. Therefore, the resulting poly-p-xylylene layers have relatively high impurity levels.
  • the present invention provides a multi-level structure that includes a first layer and a parylene polymer layer disposed along the first layer.
  • the parylene polymer layer is formed from a material having the structure: m is an integer having a value of 0, 1, 2, 3 or 4, and z is greater than 1.
  • G is a halogen, alkyl group, cyclo hydrocarbon, alkylene group or alkylyne group having the general formula C PainH y X w , wherein X is a halogen, n is an integer greater than zero.
  • G is an alkyl group
  • y +w equals 2n+l
  • y + w is less than 2n+l
  • the parylene polymer layer has a zinc impurity level of at most about 10 parts per million.
  • the present invention provides a method making a multi-level structure.
  • the method includes the steps of depositing a monomer on a surface of a first layer and polymerizing the monomer to form a parylene polymer film on the surface of the first layer.
  • the parylene polymer has the structure:
  • G is a halogen, an alkyl group, a cyclo hydrocarbon, an alkylene group or an alkylyne group having the general formula C n H y X w , wherein X is a halogen, n is an integer greater than zero. If G is an alkyl group, y +w equals 2n+l, but if G is a cyclo hydrocarbon, alkylene group or an alkylyne group, y + w is less than 2n+l.
  • the parylene polymer layer has a zinc impurity level of at most about 10 parts per million.
  • the present invention provides a multi-level structure that comprises a first layer and a parylene polymer layer disposed along the surface of the first layer.
  • the parylene polymer layer is formed from a material having the structure:
  • G is a halogen, an alkyl group, a cyclo hydrocarbon, an alkylene group or an alkylyne group having the general formula C n H y X w , wherein X is a halogen, n is an integer greater than zero. If G is an alkyl group, y +w equals 2n+l . but if G is a cyclo hydrocarbon, alkylene group or an alkylyne group, y + w is less than 2n+l .
  • the parylene polymer layer has a zinc impurity level of at most about 10 parts per million.
  • the multi-level structure is formed by a process that includes: vaporizing a parylene dimer; and pyrolizing the parylene dimer to form a monomer.
  • parylene polymer films that can be effectively used in relatively harsh environments, such as, for example, high temperature (e.g., above about 200°C), high corrosion or both.
  • Fig. 1 is a cross-sectional view of one embodiment of a multi-level structure according to the present invention
  • Fig. 2 is a cross-sectional view of another embodiment of a multi-level structure according to the present invention.
  • Fig. 3 is a cross-sectional view of a portion of one embodiment of an integrated circuit including a multi-level structure according to the present invention.
  • Fig. 4 is a block diagram of one embodiment of a vacuum chamber which may be used to form parylene polymer layers according to the present invention.
  • Fig. 1 depicts a multi-level structure 10 according to the present invention.
  • Structure 10 includes substrate layer 12 and parylene polymer layer 14.
  • parylene polymer it is herein meant to refer to a poly-p-xylylene formed from a parylene dimer.
  • Substrate layer 12 may be formed from any materials onto which parylene polymer layer
  • substrate layer 12 is capable of being deposited. These materials may include electrically conductive and electrically non-conductive materials. The particular material from which layer 12 is formed depends upon the application, and such materials are known to those skilled in the art. For example, substrate layer 12 may be formed from organic materials or inorganic materials including, but not limited to.
  • layer 12 may comprise gallium arsenide or other binary semiconductors.
  • Substrate layer 12 may also be formed from a vacuum compatible liquid.
  • vacuum compatible it is herein meant to refer to a material that has a vapor pressure at the operating temperature ofthe vacuum chamber used such that the minimum pressure to which the vacuum chamber can be pumped is independent ofthe presence of the vacuum compatible material.
  • a vacuum compatible liquid is gamma-methacryloxypropyltrimethoxysilane.
  • substrate layer 12 may be a printed circuit board, a silicon backboard, a fiberglass backboard, a silicon wafer, paper, a key pad, a catheter, a pacemaker cover, a subcutaneous probe, a bird feather, a silicone O-ring, parts of a mechanical apparatus, such as an automobile, or the like.
  • Parylene polymer layer 14 is formed from a material having the structure:
  • FIG. 2 depicts another multi-level structure 20 according to the present invention.
  • Structure 20 includes parylene polymer layer 14 disposed between a first layer of material 16 and a second layer of material 18.
  • layers 16 and 18 may be formed from any ofthe materials listed above with reference to substrate layer 12.
  • layer 16 and/or layer 18 may take on any ofthe above-noted shapes of substrate layer 12.
  • Layer 16 and/or layer 18 may take on other shapes as well.
  • each of layers 16 and 18 may be formed from materials that are at least partially electrically conductive.
  • layers 16 and 18 may be formed from metals using standard photolithographic and etching techniques.
  • layers 16 and 18 may each correspond to a power plane, a ground plane or a metal interconnection trace layer.
  • Other processes for forming layers 16 and 18 are known to those skilled in the art and are intended to be within the scope of the present invention.
  • Parylene polymer layer 14 may be relatively difficult to adhere to certain other materials, so it may be desirable to promote the adhesion of layer 14 to other surfaces. Accordingly, parylene polymer layer 14 may undergo certain surface treatments to increase its ability to adhere to other surfaces. Such treatments include, for example, plasma treatment, corona treatment, charge treatment and/or other surface roughening treatments. These treatments are known to those skilled in the art and are intended to be within the scope ofthe present invention. These surface treatments may be performed on the entire surface of layer 14 or only on portions thereof. Furthermore, in some embodiments, layer 16 and/or layer 18 may be formed from a material that promotes adhesion between parylene polymer layer 14 and other layers. For such embodiments, layer 14 may or may not undergo any ofthe above-noted surface treatments.
  • layer 16 and/or layer 18 may be formed from materials that reduce or eliminate the diffusion of materials through parylene polymer layer 14.
  • Materials appropriate for use in these applications are disclosed in, for example, U.S. Patent No. 5,470,802. Other such materials are known to those skilled in the art and are intended to be within the scope ofthe present invention.
  • parylene polymer layer 14 is comparatively conformal, layer 14 may not have the desired degree of flatness. Hence, it may be advantageous to grind or otherwise treat layer 14 to make it more flat, often referred as planarizing within the art.
  • layer 14 may be difficult to planarize.
  • layer 16 and/or layer 18 may be formed from a material that is more readily planarized. Typically, such a material is a dielectric material, but, in some instances, it may be an electrical conductor.
  • Fig. 3 shows a portion 30 of a multi-level electronic circuit according to the present invention. Portion 30 includes silicon wafer substrate 22, electrically insulating layer 24, electrically conductive layer 26, electrically conductive layer 28 and parylene polymer layer 14 disposed between layers 26 and 28.
  • Silicon wafer substrate 22 may be formed from any ofthe standard substrate materials used in the electronics industry, such as, for example, a silicon backboard or a fiberglass backboard. Other appropriate structures for wafer substrate 22 are known to those skilled in the art and are intended to be within the scope of the present invention.
  • Electrically insulating layer 24 typically functions to protect wafer substrate 22 from electrically conductive layers 26 and 28.
  • Layer 24 is usually formed from silicon dioxide, although other appropriate materials may be used. Electrically insulating layer 24 may be formed according to any of the standard techniques known to those skilled in the art.
  • Electrically conductive layers 26 and 28 may be formed from metals or other materials appropriate for use in electronic circuits.
  • Layers 26 and 28 may comprise metal conductor lines which are formed according to standard photolithographic and etching techniques.
  • layers 26 and 28 may each correspond to a power plane, a ground plane or an interconnection trace layer.
  • parylene polymer layer 14 is formed using a vapor deposition process.
  • the vapor deposition process allows the monomer to be formed outside the deposition portion of the vacuum chamber such that the monomers can undergo a purification process prior to being deposited onto the substrate.
  • parylene polymer layer 14 is formed using a vacuum chamber 40 as depicted in Fig. 4.
  • Vacuum chamber 40 includes vaporization zone 42, a pyrolysis zone 44, a post-pyrolysis zone 46 and a deposition zone 48. Examples of such vacuum chamber are disclosed in, for example. commonly assigned U.S. Patent No. 5.546,473, which is herein incorporated by reference.
  • vaporization zone 42 is placed within vaporization zone 42 at about room temperature and subsequently heated to a temperature of from about 70 °C to about 150°C to vaporize the dimer.
  • the vaporized dimer passes into pyrolysis zone 44 which is maintained at a temperature of from about 600°C to about 720°C to pyrolize the dimer (i.e., cleave certain chemical bonds) and form a monomer having the following structure:
  • post-pyrolysis zone 46 which is maintained at a temperature of at most about room temperature. At this temperature, residual vaporized dimer can adhere to the walls of post-pyrolysis zone 46 while the monomer generally passes through post-pyrolysis zone 46 without adhering to the walls of zone 46. Thus, post-pyrolysis zone 46 reduces the amount of vaporized dimer that ultimately enter deposition chamber 48. In certain embodiments, this feature can be advantageous because the vaporized dimer can constitute an impurity in parylene polymer layer 14, which may have an undesirable local effect on the dielectric constant or other properties of layer 14. After passing through post-pyrolysis zone 46, the monomer enters deposition chamber 48 which includes substrate 50.
  • Substrate 50 is placed on a platen 52 that includes a standard temperature controlling device 54 that controls the temperature by the platen by heating and/or cooling platen 54.
  • a standard temperature controlling device 54 controls the temperature by the platen by heating and/or cooling platen 54.
  • the temperature of substrate 50 and platen 52 is typically held at a temperature of from about room temperature to about -25 °C during deposition ofthe monomer onto substrate 50.
  • reducing the temperature of substrate 50 and platen 52 during monomer deposition can provide several advantages, including more control ofthe overall process of making parylene polymer layer 14 by allowing for increased manipulation ofthe monomer.
  • cooling substrate 50 and platen 52 allows for the walls of deposition chamber 48 to be heated during monomer deposition.
  • reducing the temperature of substrate 50 and platen 52 during monomer deposition results in a more efficient deposition process and a more efficient use ofthe parylene dimer starting material.
  • device 54 may be used to increase the temperature of substrate 50 and platen 52 to a temperature of from about 100°C to about 400°C to anneal the parylene polymer layer.
  • polymerization ofthe parylene monomer occurs spontaneously at the temperatures of substrate 50 noted above.
  • the dimer Prior to placing the dimer within vaporization zone 46, the dimer is first purified. Since the dimer ofthe present invention has a high degree of symmetry, it is readily purified by crystallization. Typically, these solvents are relatively unsymmetric in order to have a high temperature coefficient of solubility. However, if the solvent is too symmetric, separation ofthe solvent from the dimer may be difficult.
  • Solvents appropriate for use in dimer crystallization according to the present invention include, but are not limited to, chloroform, tetrahydrofuran, methylene chloride, and linear hydrocarbons such as n-hexane and n-heptane.
  • the solvent is n-hexane.
  • the zinc impurity level may be less than 50 parts per billion.
  • This feature ofthe present invention is desirable because impurities within parylene polymers can result in several different negative effects, including, but not limited to, an increase in the dielectric constant of the parylene polymer layer, a decrease in the surface resistivity ofthe parylene polymer layer and/or electron storm formation within the multi-level structure. While particular apparatuses and methods of making parylene polymer layer 14 have been described herein, one skilled in the art would understand that at least certain aspects of these apparatuses and methods may be varied or modified, and such variations and modifications are intended to be within the scope ofthe present invention.
  • the parylene dimer may be cleaved by use of a plasma.
  • a plasma Such methods are disclosed in, for example, Russian Patent Nos. RU 2,000,850 and RU 2,002,519.
  • parylene polymer layer 14 When used in integrated circuits or for other electronics applications, parylene polymer layer 14 should have a minimal dielectric constant to enhance circuit operating speed and decrease power consumption. Accordingly, these parylene polymer layers preferably have a dielectric constant of at most about 2.6, more preferably at most about 2.4 and most preferably at most about 2.2.
  • parylene polymer layers in accordance with the present invention preferably have a dissipation factor of less than about 0.001.
  • parylene polymer layers with a thickness of about one micrometer preferably have a breakdown voltage of at most about 750 microvolts.
  • Parylene polymer layer 14 preferably has a Young's modulus of about 5 gigapascals.
  • the elongation to break of parylene polymer layers according to the present invention is preferably at least about 20%.
  • Parylene polymer layer 14 preferably has an ultimate tensile strength of at least about 122 megapascals.
  • parylene polymer layers have water absorption values of at most about 0.5% by weight, more preferably at most about 0.2% by weight and most preferably at most about 0.1 % by weight.
  • Parylene polymer layers in accordance with the present invention preferably have a thermal stability such that these layers demonstrate less than 1% weight loss per 2 hours at a temperature of at least about 450 °C.
  • Parylene polymer layer 14 preferably has a crystalline melting point of above about 500°C.
  • the surface resistivity of parylene polymer layers in accordance with the present invention is preferably about 1.3xl0 14 ohms.
  • the volume resistivity of parylene polymer layer 14 is preferably about 5.3xl0 16 ohms.
  • Parylene polymer layers in accordance with the present invention preferably have a density of about 1.58.
  • the thermal expansion at 25 °C of parylene polymer layer 14 is preferably at most about 35 parts per million.
  • parylene polymer layers have a coefficient of friction of about 0.2.
  • the following process was performed in a jacketed Soxhlet extractor (available as catalog number LG-6950, from Lab Glass, located in Vineland, NJ or as catalog number CG-1328, available from Chem Glass, located in Vineland. NJ).
  • An amount ofthe crude dimer used as the starting material in the synthesis ofthe parylene polymer layers ofthe present invention was placed within a glass extraction thimble with a fritted glass disk at its bottom.
  • a short chromatographic bed of particulate alumina was placed at the bottom of the thimble.
  • the thimble was purchased with a diameter of 41 mm and a height of 130 mm.
  • the height ofthe thimble was increased to 180 mm to accommodate larger samples (i.e., up to about 70 grams) of the crude dimer.
  • a flask of boiling n-hexane was placed below the thimble, and gaseous n-hexane was condensed in a condenser mounted above the thimble.
  • the condensed n-hexane dripped onto the crude dimer to form a leachant solution ofthe condensed n-hexane, purified dimer and impurities, including dirt, dust, and/or polymers or oligomers ofthe monomer formed by the dimer.
  • the leachant solution passed through the chromatographic bed and fritted glass at the bottom ofthe thimble.
  • the chromatographic bed removed many polar or ionic impurities present within the leachant solution due to the polar nature of alumina.
  • the chromatographic bed removed fine impurities by filtration.
  • a siphoning mechanism was used to periodically empty the leachant solution from the Soxhlet extractor holding the thimble. This process returned the n-hexane from the leachant solution to the flask of boiling n-hexane. After a period of from about 10 to about 20 hours, the crude dimer ended up in the flask of boiling n-hexane. The extraction was conducted at the boiling n-hexane to speed up the dimer dissolution process. To accomplish this, a conduit jacket surrounded the extraction volume, so the extraction volume was heated by vapors of n-hexane as these vapors traveled from the boiling flask to the condenser. While this hot filtration process is advantageous because impurities are removed while the solution is hot.
  • the resulting purified dimer ofthe present invention was tested by inductively coupled plasma-mass spectrometry ofthe vaporized dimer.
  • the sample is ashed to remove carbon containing components, leaving nonvolatile oxides ofthe trace elements to be determined.
  • This ash is taken up in an aqueous buffer solution.
  • the aqueous buffer solution of the sample ash is fed to an energized plasma.
  • the high temperature ofthe plasma atomizes the trace elements.
  • the atomized plasma is fed to the source of a mass spectrometer for quantification of each specific impurity elements.

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Abstract

Cette invention se rapporte à des structures multiniveaux qui contiennent une première couche sur laquelle est déposée une couche de polymère de parylène. La couche de polymère de parylène comporte la structure (I), dans laquelle m représente un nombre entier ayant une valeur égale à 0, à 1, à 2, à 3 ou à 4 et z est supérieur à 1. G représente un halogène, un groupe alkyle, un hydrocarbure cyclo, un groupe alkylène ou un groupe alkylyne ayant la formule générale CnHyXw. X représente un halogène, et n représente un nombre entier supérieur à 0. La somme de y et w est égale à 2n+1 au maximum. La couche de polymère de parylène possède un niveau d'impuretés de zinc d'environ 10 parties par million au maximum. Dans certains modes de réalisation, la couche de polymère de parylène peut comporter un niveau d'impuretés de zinc inférieur à 50 parties par billion. Ces couches de polymère de parylène sont formées par un procédé dans lequel des monomères sonf formés à l'extérieur d'une zone de dépôt d'une chambre à vide. Les monomères peuvent être préparés par un procédé dans lequel un dimère de parylène est vaporisé et ensuite pyrolisé. Ce procédé peut en outre comporter une opération consistant à faire passer la vapeur à travers une zone post-pyrolyse avant le dépôt du monomère sur le substrat.
PCT/US1996/017052 1995-10-27 1996-10-25 Couches de polymere de parylene WO1997015951A1 (fr)

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US6020458A (en) * 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
US6140456A (en) * 1997-10-24 2000-10-31 Quester Techology, Inc. Chemicals and processes for making fluorinated poly(para-xylylenes)
US6138349A (en) * 1997-12-18 2000-10-31 Vlt Corporation Protective coating for an electronic device
US6323297B1 (en) * 1997-10-24 2001-11-27 Quester Technology, Inc. Low dielectric constant materials with improved thermal and mechanical properties
US6358863B1 (en) 1998-05-01 2002-03-19 Quester Technology, Inc. Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition
US6495208B1 (en) 1999-09-09 2002-12-17 Virginia Tech Intellectual Properties, Inc. Near-room temperature CVD synthesis of organic polymer/oxide dielectric nanocomposites
WO2002069395A3 (fr) * 2001-02-26 2003-08-21 Dielectric Systems Inc Integration de films minces a faible constante dielectrique $m(e) et de ta dans un procede de double damasquinage cu
US6797343B2 (en) 2001-12-20 2004-09-28 Dielectric Systems, Inc. Dielectric thin films from fluorinated precursors
EP1018527A3 (fr) * 1998-12-09 2004-10-27 Applied Materials, Inc. Couches copolymeres nano-poreuses à basse constante dielectrique
US6881447B2 (en) 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
US6962871B2 (en) 2004-03-31 2005-11-08 Dielectric Systems, Inc. Composite polymer dielectric film
US7026052B2 (en) 2001-02-26 2006-04-11 Dielectric Systems, Inc. Porous low k(<2.0) thin film derived from homo-transport-polymerization
US7094661B2 (en) 2004-03-31 2006-08-22 Dielectric Systems, Inc. Single and dual damascene techniques utilizing composite polymer dielectric film
US7179283B2 (en) 2001-11-02 2007-02-20 Scimed Life Systems, Inc. Vapor deposition process for producing a stent-graft and a stent-graft produced therefrom
US7192645B2 (en) 2001-02-26 2007-03-20 Dielectric Systems, Inc. Porous low E (<2.0) thin films by transport co-polymerization
US7309395B2 (en) 2004-03-31 2007-12-18 Dielectric Systems, Inc. System for forming composite polymer dielectric film

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US6881447B2 (en) 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
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